CN217476315U - Roller for multi-line cutting of silicon carbide crystals - Google Patents
Roller for multi-line cutting of silicon carbide crystals Download PDFInfo
- Publication number
- CN217476315U CN217476315U CN202220410591.XU CN202220410591U CN217476315U CN 217476315 U CN217476315 U CN 217476315U CN 202220410591 U CN202220410591 U CN 202220410591U CN 217476315 U CN217476315 U CN 217476315U
- Authority
- CN
- China
- Prior art keywords
- roller
- cutting
- wire
- silicon carbide
- width
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The utility model provides a roller for multi-thread cutting of silicon carbide crystal, this roller have a plurality of line groove district of discontinuity, and the groove distance and the width in every line groove district are variable, are provided with the subregion between the adjacent line groove district, are equipped with the required cutting copper wire constant head tank of wire winding and fixed screw hole on the subregion. The utility model discloses the carborundum crystal thickness that can cut as required and the wafer thickness after cutting select different wire casing district wire winding and cutting on same roller, need not to change the roller, have increased the life of roller, have reduced the installation, have dismantled roller and wire-wound time, have reduced the multi-thread cutting cost of carborundum crystal.
Description
Technical Field
The utility model relates to a roller for multi-line cutting of carborundum crystal belongs to semiconductor material processing field.
Background
The silicon carbide is a third-generation semiconductor material, has the performance advantages of wider forbidden band width, higher breakdown electric field, higher thermal conductivity and the like, can effectively break through the physical limits of the traditional silicon-based power semiconductor device and the material thereof, and is particularly suitable for 5G radio frequency devices and high-voltage power devices. Silicon carbide crystals have been used in a variety of fields such as smart grids, electric vehicles, rail transit, and the like. At present, the preparation of silicon carbide crystals is mainly based on a PVT method, the grown silicon carbide crystals need to be subjected to cutting, grinding, polishing and other processing procedures, and the obtained single crystal slices are used as substrate materials and can be prepared into silicon carbide-based power devices and microwave radio-frequency devices through links such as epitaxial growth, device manufacturing and the like.
At present, the main stream cutting equipment of silicon carbide crystals in the industry is a numerical control multi-wire cutting machine, which is characterized in that a metal cutting wire is wound on a group of rollers with the same groove distance to form a parallel wire net, the rollers rotate to drive the metal cutting wire to rotate at a high speed, diamond powder in cutting liquid generates friction with materials, a workbench ascends or descends at the same time, the materials are simultaneously cut into a plurality of slices at one time, and the thickness of the slices is mainly determined by the groove distance of the rollers.
The mohs hardness of silicon carbide is 9.2, second only to diamond, resulting in considerable difficulty in cutting SiC crystals, and much longer time and length of cutting line are required to cut silicon carbide crystals of the same diameter as compared with silicon single crystals. The cutting time of the 6-inch silicon carbide single crystal is 150-200 h. In addition, the length of the wire supply wheel is limited, so that the length of the crystal cut each time is far lower than the actual length of the roller, as shown in fig. 1, the length of the roller of the current 6-inch multi-wire cutting machine exceeds 300mm, the length of the crystal which can be actually cut does not exceed 60mm, the roller needs to be replaced after two or three times of cutting, and the utilization rate of the roller is very low; secondly, the roller wire casing for the multi-wire cutting of the existing silicon carbide only has one specification, and rollers with different specifications need to be frequently disassembled and assembled when silicon carbide wafers with different thicknesses need to be obtained, so that the workload is greatly increased.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a roller that is used for multi-thread cutting of carborundum crystal to solve the problem that proposes among the above-mentioned background art.
In order to achieve the above object, the utility model provides a following technical scheme: a roller for multi-line cutting of silicon carbide crystals is provided with a plurality of discontinuous line groove areas, and a separation area is arranged between every two adjacent line groove areas.
Preferably, the width of the line slot area is 50-150 mm, the width of the line slot area depends on the diameter of the silicon carbide crystal, and the larger the diameter is, the smaller the width of the line slot area is; the number of the line groove areas depends on the diameter of the silicon carbide crystal and the length of the roller, and the larger the crystal diameter is, the longer the roller is, the larger the number of the line groove areas is.
Preferably, the slot pitch of the slot area is 0.68 mm-1.15 mm, and the slot pitches in different slot areas can be the same or different.
Preferably, the width of the separating area is 10-30 mm, and the separating area is provided with a steel wire positioning groove and steel wire fixing screw holes required by winding.
Preferably, the width of the steel wire positioning groove is 5-10 mm, and the depth is 0.3-2 mm.
Compared with the prior art, the beneficial effects of the utility model are that: the utility model discloses the roller has the line groove district of the same or different slot pitches, can cut on a roller and obtain the wafer that thickness requires the same or different and need not to change the roller, has reduced the number of times of installation, dismantlement roller to the use number of times of roller is also great increase, has improved work efficiency, and has reduced roller use cost.
The utility model discloses be equipped with the subregion on the roller, can avoid can only beginning the wire winding from the roller head when using different wire casing zone time cutting, need cut off the drawback of unnecessary winding displacement and adjustment guide pulley after the wire winding finishes, reduce wire winding and adjustment guide pulley time, improved work efficiency.
Drawings
FIG. 1 is a schematic representation of a prior art multi-wire saw cutting a silicon carbide crystal;
FIG. 2 is a schematic representation of the cutting of a silicon carbide crystal using the slot area A in example 1 of the present invention;
FIG. 3 is a schematic diagram of silicon carbide crystal cut using the slot area B in example 1 of the present invention.
In the figure: 1 silicon carbide crystal, 2 working tables, 3 steel wire positioning grooves, 4 wire groove areas B,5 wire groove areas A and 6 steel wire fixing screws.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Example 1
As the utility model discloses a roller for multi-thread cutting of silicon carbide crystal, roller material are super high molecular polyethylene, have two independent wire casing districts on the roller, are wire casing district A5, wire casing district B4 respectively, and the width of wire casing district A and B all is 145mm, and the tank spacing all is 0.68m, is provided with the subregion between wire casing district A and the B, and the width of subregion is 20mm, 3 width 5mm of the copper wire constant head tank on the subregion, degree of depth 1 mm. After the roller is installed, the silicon carbide crystal 1 is fixed at the position shown in figure 2, winding is started from the head of the roller, after the wire groove area A5 is fully wound, the steel wire is wound to the side of a take-up wheel to complete winding, the workbench 2 is lifted to start cutting, and after the cutting is finished, a wafer with the thickness of about 0.5mm is obtained. And (3) removing the steel wire in the wire groove area A5 after taking out the cut wafer, fixing another batch of silicon carbide crystals at the position shown in the figure 3, winding the steel wire from the separation area, firstly winding the steel wire on the steel wire positioning groove 3, fixing the steel wire on the roller by using the steel wire fixing screw 6, winding until the wire groove area B4 is fully wound, taking down the steel wire fixing screw 6, winding the steel wire into the take-up wheel side to complete winding, lifting the workbench 1 to start cutting, and obtaining the wafer with the thickness of about 0.5mm after cutting. The roller has twice use time compared with the conventional roller.
Example 2
As the utility model discloses a roller for multi-thread cutting of silicon carbide crystal, the roller material is ultra high molecular polyethylene, there are two independent wire casing districts on the roller, be wire casing district A5 respectively, wire casing district B4, the width of wire casing district A and B all is 145mm, the tank spacing of wire casing district A5 is 0.82m, the tank spacing of wire casing district B4 is 1.15m, be provided with the subregion between wire casing district A and the B, the width of subregion is 20mm, 3 width 5mm of the copper wire constant head tank on the subregion, degree of depth 1 mm. After the roller is installed, the silicon carbide crystal 1 is fixed at the position shown in figure 2, winding is started from the head of the roller, after the wire groove area A5 is fully wound, the steel wire is wound to the side of a take-up wire wheel to complete winding, the workbench is lifted to start cutting, and after the cutting is finished, a wafer with the thickness of about 0.64mm is obtained. And (3) taking out the cut wafer, removing the steel wire in the wire groove area A5, fixing another batch of silicon carbide crystals 1 at the position shown in the figure 3, winding the steel wire from the separation area, firstly winding the steel wire on the steel wire positioning groove 3, fixing the steel wire on a roller by using steel wire fixing screws 6, winding until the wire groove area B5 is fully wound, taking down the steel wire fixing screws 6, winding the steel wire into a take-up wheel side to complete winding, lifting the workbench 2 to start cutting, and obtaining the wafer with the thickness of about 0.97mm after cutting. The roller can be cut into wafers with two specifications without replacement.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (7)
1. The roller is characterized in that the roller is provided with a plurality of discontinuous line groove areas, and a separation area is arranged between every two adjacent line groove areas.
2. The roller of claim 1, wherein the roller has no less than 2 slot zones, the slot pitch in each slot zone is the same, and the slot pitch and width of different slot zones are variable.
3. The roller of claim 2, wherein the width of the channel region is 50-150 mm.
4. The roller of claim 2, wherein the groove pitch of the wire groove region is between 0.68mm and 1.15 mm.
5. The roller of claim 1, wherein the width of the separation zone is 10-30 mm.
6. Roller according to claim 5, characterised in that the compartment is provided with steel wire positioning slots (3) and steel wire fixing screw holes (6) required for winding.
7. The roller as claimed in claim 6, wherein the steel wire positioning grooves have a width of 5-10 mm and a depth of 0.3-2 mm.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202220410591.XU CN217476315U (en) | 2022-02-28 | 2022-02-28 | Roller for multi-line cutting of silicon carbide crystals |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202220410591.XU CN217476315U (en) | 2022-02-28 | 2022-02-28 | Roller for multi-line cutting of silicon carbide crystals |
Publications (1)
Publication Number | Publication Date |
---|---|
CN217476315U true CN217476315U (en) | 2022-09-23 |
Family
ID=83305643
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202220410591.XU Active CN217476315U (en) | 2022-02-28 | 2022-02-28 | Roller for multi-line cutting of silicon carbide crystals |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN217476315U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115958709A (en) * | 2022-12-28 | 2023-04-14 | 宁波合盛新材料有限公司 | Multi-wire cutting method for silicon carbide wafer |
-
2022
- 2022-02-28 CN CN202220410591.XU patent/CN217476315U/en active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115958709A (en) * | 2022-12-28 | 2023-04-14 | 宁波合盛新材料有限公司 | Multi-wire cutting method for silicon carbide wafer |
CN115958709B (en) * | 2022-12-28 | 2023-06-20 | 宁波合盛新材料有限公司 | Multi-line cutting method for silicon carbide wafer |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103722625B (en) | A kind of method and apparatus utilizing diamond wire saw major diameter single-crystal silicon carbide | |
CN100348391C (en) | Great diameter SiC monocrystal cutting method | |
CN217476315U (en) | Roller for multi-line cutting of silicon carbide crystals | |
US4384564A (en) | Process of forming a plated wirepack with abrasive particles only in the cutting surface with a controlled kerf | |
WO2011024910A1 (en) | Silicon wafer for solar cells and production method therefor | |
JP5127209B2 (en) | Manufacturing method of semiconductor substrate | |
Kim et al. | Multi-wire sawing of sapphire crystals with reciprocating motion of electroplated diamond wires | |
CN101979230A (en) | Method for cutting silicon carbide crystal in sections by using multi-line cutter | |
KR102103712B1 (en) | Method for cutting high-hardness material by multi-wire saw | |
JP2012240313A (en) | Cutting device, and cutting method | |
CN108437246A (en) | A kind of method and apparatus of silicon core flaw-piece cutting finished silicon core | |
CN112297261A (en) | Cutting process of large-size silicon wafer for solar energy | |
US6109253A (en) | Method using a wire feeding device for a multi-wire saw | |
Zhao et al. | A novel technique for slicing SiC ingots by EDM utilizing a running ultra-thin foil tool electrode | |
CN105058604A (en) | Multi-wire sawing machine roller for cutting SiC single crystals with different diameters and use method of multi-wire sawing machine roller | |
JP4258592B2 (en) | Ingot cutting apparatus and method | |
CN110856963A (en) | Multi-wire saw grooved wheel capable of cutting SiC with different thicknesses simultaneously | |
CN110039673A (en) | A kind of cutter device and method | |
KR102100839B1 (en) | Workpiece cutting method | |
WO1999002295A2 (en) | Apparatus and method for slicing a workpiece utilizing a diamond impregnated wire | |
CN103182747B (en) | Multi-wire sawing wire net system | |
CN209999500U (en) | Scroll saw and spool thereof | |
JP5371355B2 (en) | Substrate manufacturing method and solar cell element | |
CN112092225B (en) | Crystal bar baffle and crystal bar cutting method | |
CN213005970U (en) | Crystal bar wire cutting roller and crystal bar multi-wire cutting device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant |