CN217469098U - Package module of optical chip - Google Patents

Abstract

The application relates to the field of optical communication, and provides an optical chip's encapsulation module, including the heat sink of being made by insulating heat conduction material to and encapsulate the optical chip on heat sink, the one side of optical chip towards heat sink is equipped with first P electrode, and the one side of heat sink towards optical chip is equipped with the second P electrode, and second P electrode and first P electrode looks butt and electricity are connected. The packaging module of the optical chip packages the optical chip on the heat sink in a posture that the first P electrode faces the heat sink, and enables the first P electrode of the optical chip to be abutted against and electrically connected with the second P electrode of the heat sink. Therefore, the risk and degree of heat accumulation of the optical chip can be reduced, and the risk of light emitting performance deterioration of the optical chip and even burning out of the optical chip can be further reduced.

Description

Package module of optical chip

Technical Field

The application belongs to the technical field of optical communication, and particularly relates to an optical chip packaging module.

Background

The package module of the existing optical chip generally connects the P electrode of the optical chip to the heat sink through a metal lead, so as to dissipate heat of the optical chip through the heat sink. However, the main heat generating region including the P electrode of the optical chip is far away from the heat sink, which causes the thermal accumulation of the optical chip to be serious, and the optical chip is easy to deteriorate or even burn out.

SUMMERY OF THE UTILITY MODEL

An object of the embodiments of the present application is to provide a package module of an optical chip, so as to solve the technical problem that in the package module of the existing optical chip, the thermal accumulation of the optical chip is serious, which causes the optical chip to be easily deteriorated and even burned out.

In order to achieve the purpose, the technical scheme adopted by the application is as follows: the encapsulation module of the optical chip comprises a heat sink made of insulating heat conduction materials and the optical chip encapsulated on the heat sink, wherein a first P electrode is arranged on one side, facing the heat sink, of the optical chip, a second P electrode is arranged on one side, facing the optical chip, of the heat sink, and the second P electrode is abutted and electrically connected with the first P electrode.

In one embodiment, the second P electrode includes a conductive plate and a conductive pillar disposed on a side of the conductive plate away from the heat sink, the conductive pillar is abutted and electrically connected to the first P electrode, and a surface of the conductive plate protrudes from the optical chip.

In one embodiment, a plug hole for the conductive pillar to be inserted therein is disposed on one side of the optical chip facing the heat sink, the first P electrode is disposed at a hole bottom of the plug hole, and a hole wall of the plug hole is in insulation contact with both the conductive pillar and the first P electrode disposed therein.

In one embodiment, an insulating layer is disposed on a side of the optical chip facing the heat sink, and the insertion hole is disposed on the insulating layer.

In one embodiment, an insulating layer is disposed on a side of the heat sink facing the optical chip, and the insulating layer is provided with a through insertion hole for the conductive pillar and the first P electrode to be inserted therein.

In one embodiment, the optical chip includes a laser, an electro-absorption modulator, and an optical amplifier, which are sequentially butted along a light-emitting direction, the laser is used for being powered on and outputting an optical signal, the electro-absorption modulator is used for performing signal modulation on the optical signal output by the laser, and the optical amplifier is used for amplifying the optical signal modulated by the electro-absorption modulator, wherein the light-emitting direction is parallel to the heat sink.

In one embodiment, the number of the first P-electrodes is three, three first P-electrodes are respectively disposed on the laser, the electroabsorption modulator and the optical amplifier, the number of the second P-electrodes is three, and three second P-electrodes are connected to the three first P-electrodes in a one-to-one correspondence manner.

In one embodiment, the number of the first P electrodes is two, one of the first P electrodes is electrically connected to the laser and the optical amplifier, the other one of the first P electrodes is electrically connected to the electroabsorption modulator, the number of the second P electrodes is two, and the two second P electrodes are connected to the two first P electrodes in a one-to-one correspondence manner.

In one embodiment, a first N electrode is disposed on a side of the optical chip facing away from the heat sink, and the first N electrode is electrically connected to the laser, the electroabsorption modulator, and the optical amplifier;

and one side of the heat sink facing the optical chip is provided with a second N electrode, the second N electrode and the optical chip are arranged in a staggered manner, and the second N electrode is electrically connected with the first N electrode through a metal lead.

In one embodiment, the optical chip further includes a passive region disposed on one side of the optical amplifier along the light-emitting direction, where the passive region is used for passing through an optical signal amplified by the optical amplifier with low loss; the passive region at least partially protrudes out of the heat sink along the light emergent direction.

In one embodiment, the optical chip further includes an antireflection film disposed on one side of the passive region along the light emitting direction.

The application provides beneficial effect lies in:

the optical chip packaging module provided by the embodiment of the application encapsulates the optical chip on the heat sink made of the insulating heat conduction material in a posture that the first P electrode faces the heat sink, and enables the first P electrode of the optical chip to be abutted against and electrically connected with the second P electrode of the heat sink, so as to form an integrated and large-scale optical chip packaging module. Therefore, the risk and degree of heat accumulation of the optical chip can be effectively reduced, the use performance of the optical chip can be guaranteed and improved, the service life of the optical chip can be guaranteed and prolonged, and particularly the risk of light emitting performance deterioration and even burning out of the optical chip can be reduced.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.

Fig. 1 is a schematic perspective view of a package module of an optical chip according to an embodiment of the present disclosure;

FIG. 2 is a cross-sectional view taken along A-A as provided in FIG. 1;

fig. 3 is a schematic perspective view of a heat sink according to an embodiment of the present application;

fig. 4 is a schematic perspective view of an optical chip according to an embodiment of the present application;

FIG. 5 is a perspective cross-sectional view of the photonic chip provided in FIG. 4.

Wherein, in the figures, the respective reference numerals:

10-heat sink, 11-second P electrode, 111-conductive plate, 112-conductive pillar, 12-second N electrode;

20-optical chip, 21-first P electrode, 22-plug hole, 23-insulating layer, 24-laser, 25-electric absorption modulator, 26-optical amplifier, 27-first N electrode, 28-passive region and 29-antireflection film.

Detailed Description

In order to make the technical problems, technical solutions and advantageous effects to be solved by the present application clearer, the present application is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.

In the description of the present application, it is to be understood that the terms "length," "width," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like, as used herein, refer to an orientation or positional relationship indicated in the drawings, which is for convenience and simplicity of description, and does not indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and thus, is not to be considered as limiting.

Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.

In this application, unless expressly stated or limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can include, for example, fixed connections, removable connections, or integral parts; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.

The package module of the existing optical chip generally connects the P electrode of the optical chip to the heat sink through a metal lead, so as to dissipate heat of the optical chip through the heat sink. However, the main heat generating region of the optical chip including the P electrode is far away from the heat sink, which results in serious heat accumulation of the optical chip, and the optical chip is prone to performance deterioration and even burning out. In addition, the metal lead wire can increase the capacitance of the modulation area of the optical chip, thereby easily influencing the modulation rate of the optical chip.

Therefore, the embodiment of the application provides an optical chip's encapsulation module, can effectively reduce risk, the degree that optical chip heat accumulation appears, can effectively reduce the luminous performance of optical chip and worsen the risk that optical chip burns out even, and then can ensure and improve optical chip's performance, can ensure and prolong optical chip's life. In addition, the capacitance of the optical chip modulation area can be correspondingly reduced, so that the modulation rate of the optical chip is guaranteed and even improved.

Specific implementations of the present application are described in more detail below with reference to specific embodiments:

example one

Referring to fig. 1, fig. 2 and fig. 3, an embodiment of the present invention provides a package module for an optical chip, which is particularly suitable for packaging an optical chip 20 with high modulation rate and large output power. The packaging module of the optical chip comprises a heat sink 10 made of insulating heat conduction materials and an optical chip 20 packaged on the heat sink 10, wherein a first P electrode 21 is arranged on one side of the optical chip 20 facing the heat sink 10, a second P electrode 11 is arranged on one side of the heat sink 10 facing the optical chip 20, and the second P electrode 11 is abutted and electrically connected with the first P electrode 21.

The optical chip 20 has a performance of outputting an optical signal, that is, a light emitting performance, and the optical chip 20 generates heat during the period of powering on and outputting the optical signal, and the heat of the optical chip 20 can be dissipated through the heat sink 10 by packaging the optical chip 20 on the heat sink 10.

The heat sink 10 is made of an insulating and heat-conducting material, so that the heat sink 10 has electrical insulating performance and better heat-conducting performance. Illustratively, the heatsink 10 may be made of, but not limited to, silicon carbide (SiC), silicon-on-insulator, diamond, or sapphire materials.

The first P-electrode 21 and the second P-electrode 11 can be electrically connected by, but not limited to, soldering.

To sum up, in the optical chip package module provided in the embodiment of the present application, the optical chip 20 is packaged on the heat sink 10 made of an insulating and heat conducting material in a posture that the first P electrode 21 faces the heat sink 10, and the first P electrode 21 of the optical chip 20 is abutted against and electrically connected to the second P electrode 11 of the heat sink 10, so as to form an integrated and scaled optical chip package module, based on which, current can flow into the optical chip 20 sequentially through the second P electrode 11 and the first P electrode 21, so that the optical chip 20 can be energized and output an optical signal, and during the period that the optical chip 20 is energized and output the optical signal, heat generated by the optical chip 20, especially the first P electrode 21, can be directly conducted into the heat sink 10 sequentially through the first P electrode 21 and the second P electrode 11, so as to realize reliable heat dissipation of the optical chip 20 by the heat sink 10 with better heat conducting performance. Therefore, the risk and degree of heat accumulation of the optical chip 20 can be effectively reduced, the usability of the optical chip 20 can be ensured and improved, the service life of the optical chip 20 can be ensured and prolonged, and especially, the risk of deterioration of the light emitting performance of the optical chip 20 and even burning out of the optical chip 20 can be reduced.

In addition, since the main heat generating region of the optical chip 20 including the first P electrode 21 can construct a short heat conducting path in direct contact heat conduction with the heat sink 10 via the first P electrode 21 and the second P electrode 11 without metal wires, the capacitance of the modulation region of the optical chip 20 can be correspondingly reduced, so as to guarantee or even improve the modulation rate of the optical chip 20. Herein, the modulation region of the optical chip 20 refers to a region of the optical chip 20 for signal modulation, such as a corresponding region of the electro-absorption modulator 25 mentioned below.

Referring to fig. 1, fig. 2, and fig. 3, in the present embodiment, the second P electrode 11 includes a conductive plate 111 and a conductive pillar 112 disposed on a side of the conductive plate 111 away from the heat sink 10, the conductive pillar 112 is abutted and electrically connected to the first P electrode 21, and a plate surface of the conductive plate 111 protrudes from the optical chip 20.

The end surface shape of the conductive column 112 is the same as the end surface shape of the first P electrode 21, and the end surface size of the conductive column 112 is the same as the end surface size of the first P electrode 21. Therefore, the end face of the conductive column 112 and the end face of the first P electrode 21 can be ensured to be in equal-area correspondence and aligned and abutted, and reliable electrical connection is established.

By adopting the above scheme, the second P electrode 11 can be electrically connected to the external power supply structure through the portion of the conductive plate 111 protruding from the optical chip 20, and a reliable abutting relationship and an electrical connection relationship are established between the conductive pillar 112 and the first P electrode 21, so that the input current can be reliably transmitted to the first P electrode 21 through the conductive plate 111 and the conductive pillar 112 in sequence, thereby ensuring that the optical chip 20 can be reliably powered on and output optical signals; during the period of powering on and outputting optical signal of the optical chip 20, especially the heat generated by the first P electrode 21, can be directly conducted to the heat sink 10 through the first P electrode 21, the conductive post 112 and the conductive plate 111 in sequence, so as to reliably dissipate heat of the optical chip 20 by the heat sink 10, and because a larger contact area is formed between the conductive plate 111 and the heat sink 10, the heat conduction efficiency between the conductive plate 111 and the heat sink 10 can be favorably ensured and improved, and further the risk and degree of heat accumulation of the optical chip 20 are favorably further reduced, the risk of deterioration of the light emitting performance of the optical chip 20 or even burnout of the optical chip 20 is favorably further reduced, the service performance of the optical chip 20 is favorably ensured and improved, and the service life of the optical chip 20 is ensured and prolonged.

Referring to fig. 2, fig. 4 and fig. 5, in the present embodiment, a plugging hole 22 for inserting the conductive pillar 112 is disposed on one side of the optical chip 20 facing the heat sink 10, and a first P electrode 21 is disposed at a bottom of the plugging hole 22.

Specifically, when the optical chip 20 is packaged on the heat sink 10 in a posture that the first P electrode 21 faces the heat sink 10, the conductive pillar 112 of the second P electrode 11 of the heat sink 10 can be inserted into the insertion hole 22, and the conductive pillar 112 can be accurately abutted and electrically connected with the first P electrode 21 arranged at the bottom of the insertion hole 22, so that the conductive pillar 112 can be limited and positioned through the insertion hole 22, and the conductive pillar 112 and the first P electrode 21 can be rapidly and conveniently subjected to high-precision alignment and butt joint, so that the matching convenience and matching precision between the second P electrode 11 and the first P electrode 21 can be effectively ensured and improved, and the stability and reliability of the electrical connection relationship established between the second P electrode 11 and the first P electrode 21 can be effectively ensured and improved.

The hole wall of the plug hole 22 is in insulated contact with both the conductive pillar 112 and the first P electrode 21. With such an arrangement, the transmission path of the current can be ensured to flow from the conductive post 112 to the first P electrode 21, and the current does not diffuse out from the hole wall of the plug hole 22, so that the optical chip 20 can be reliably powered on and can reliably exert the light emitting performance.

Referring to fig. 2, 3 and 5, in the present embodiment, an insulating layer 23 is disposed on a side of the optical chip 20 facing the heat sink 10, a through plug hole 22 is disposed on the insulating layer 23, and the conductive pillar 112 and the first P electrode 21 are inserted into the plug hole 22. Wherein the insulating layer 23 is made of an insulating material.

By adopting the above scheme, on one hand, the plugging hole 22 can be conveniently formed on the insulating layer 23, so that the conductive column 112 can be limited and positioned through the plugging hole 22, and insulation between the hole wall of the plugging hole 22 and the conductive column 112 and between the hole wall of the plugging hole 22 and the first P electrode 21 can be ensured. On the other hand, after the optical chip 20 is packaged on the heat sink 10, the optical chip 20 can be in insulation contact with the conductive plate 111 through the insulating layer 23, so as to stabilize the distance therebetween, thereby facilitating to ensure and improve the stability of the relative position and the relative state between the packaged optical chip 20 and the heat sink 10.

Referring to fig. 2, fig. 4 and fig. 5, in the present embodiment, the optical chip 20 includes a laser 24, an electro-absorption modulator 25 and an optical amplifier 26 that are sequentially connected in a light outgoing direction x, where the laser 24 is used for powering on and outputting an optical signal, the electro-absorption modulator 25 is used for performing signal modulation on the optical signal output by the laser 24, and the optical amplifier 26 is used for amplifying the optical signal modulated by the electro-absorption modulator 25, where the light outgoing direction x is parallel to the heat sink 10. Wherein the laser 24 is a distributed feedback laser. The optical chip 20 preferably employs a buried waveguide structure, but may also employ a ridge waveguide structure in other possible embodiments.

Specifically, when the optical chip 20 is powered on, the laser 24 may output an optical signal to the electro-absorption modulator 25, the electro-absorption modulator 25 performs signal modulation on the optical signal output by the laser 24 and transmits the modulated optical signal to the optical amplifier 26, and the optical amplifier 26 amplifies the optical signal modulated by the electro-absorption modulator 25 and transmits the amplified optical signal continuously along the light emitting direction x until the light is emitted. Based on this, the light emitting performance of the optical chip 20 can be effectively ensured and improved.

Referring to fig. 2, 3 and 5, in the present embodiment, the number of the first P electrodes 21 is three, the three first P electrodes 21 are respectively disposed on the laser 24, the electroabsorption modulator 25 and the optical amplifier 26, the number of the second P electrodes 11 is three, and the three second P electrodes 11 are correspondingly connected to the three first P electrodes 21.

By adopting the above scheme, the three second P electrodes 11 can be respectively and electrically connected with the three first P electrodes 21, and the laser 24, the electroabsorption modulator 25 and the optical amplifier 26 can be respectively and independently powered, so that the laser 24, the electroabsorption modulator 25 and the optical amplifier 26 can be respectively and independently operated, and the light emitting performance of the optical chip 20 can be further ensured and improved.

Moreover, during the period when the laser 24, the electroabsorption modulator 25 and the optical amplifier 26 operate independently, the three first P electrodes 21 can also conduct the heat of the laser 24, the electroabsorption modulator 25 and the optical amplifier 26 to the heat sink 10 independently through the corresponding second P electrodes 11, so that the heat dissipation performance of the heat sink 10 to the laser 24, the electroabsorption modulator 25 and the optical amplifier 26 can be respectively ensured, the risk and degree of heat accumulation of the optical chip 20 can be further reduced, the risk of light emitting performance deterioration of the optical chip 20 and even burning out of the optical chip 20 can be further reduced, and the service performance and the service life of the optical chip 20 can be further ensured and improved.

Referring to fig. 1, fig. 3 and fig. 4, in the present embodiment, a first N electrode 27 is disposed on a side of the optical chip 20 away from the heat sink 10, and the first N electrode 27 is electrically connected to the laser 24, the electroabsorption modulator 25 and the optical amplifier 26; the side of the heat sink 10 facing the optical chip 20 is provided with a second N electrode 12, the second N electrode 12 and the optical chip 20 are arranged in a staggered manner, and the second N electrode 12 and the first N electrode 27 are electrically connected through a metal lead.

By adopting the above scheme, the laser 24, the electroabsorption modulator 25 and the optical amplifier 26 can share one first N electrode 27 to flow current to the corresponding second N electrode 12, and on the basis of ensuring current circulation, the number of the first N electrode 27 and the second N electrode 12 is correspondingly reduced, so that the cost of the packaging module of the optical chip can be correspondingly reduced.

Also, during the operation of the laser 24, the electroabsorption modulator 25 and the optical amplifier 26, a small amount of heat may also be conducted to the heat sink 10 via the first N-electrode 27 and the second N-electrode 12, further improving the heat dissipation performance of the heat sink 10 to the laser 24, the electroabsorption modulator 25 and the optical amplifier 26.

Referring to fig. 1, fig. 2, and fig. 5, in the present embodiment, the optical chip 20 further includes a passive region 28 disposed on one side of the optical amplifier 26 along the light-emitting direction x, the passive region 28 is not powered, and the passive region 28 is used for passing the optical signal amplified by the optical amplifier 26 with low loss. Specifically, after the optical signal is amplified by the optical amplifier 26, the amplified optical signal may continue to transmit through the passive region 28 in the light-emitting direction x and pass through the passive region 28 with low loss until the light is emitted.

Wherein the passive regions 28 at least partially protrude from the heat sink 10 in the light exit direction x. Specifically, the inactive region 28 may partially protrude from the heat sink 10 along the light exit direction x, or may fully protrude from the heat sink 10. With such an arrangement, the passive region 28 can exceed the edge of the heat sink 10 at least in the light-emitting direction x, so that a section of low-loss transmission channel of the optical signal can be formed outside the heat sink 10 along the light-emitting direction x, and further, the first P-electrode 21 and the second P-electrode 11 corresponding to the optical amplifier 26 and/or the overflow portion of the solder therebetween can be prevented from blocking the final light-emitting port along the light-emitting direction x, and the light-emitting effect of the optical chip 20 can be ensured. The overflow portion of the first P-electrode 21, the second P-electrode 11 and/or the solder therebetween corresponding to the optical amplifier 26 refers to a portion of the first P-electrode 21 and/or the second P-electrode 11 corresponding to the optical amplifier 26 protruding from the heat sink 10 due to the deformation caused by the flattening, or a portion of the solder between the first P-electrode 21 and the second P-electrode 11 corresponding to the optical amplifier 26 overflowing, and so on.

Referring to fig. 1, fig. 2, and fig. 5, in the present embodiment, the optical chip 20 further includes an antireflection film 29 disposed on one side of the inactive region 28 along the light emitting direction x. The antireflection film 29 is basically disposed at the final light outlet of the optical chip 20 along the light-emitting direction x.

By adopting the above scheme, the reflection light can be reduced by the antireflection film 29 basically arranged at the final light outlet of the optical chip 20 along the light outlet direction x, so that the transmittance of the light outlet can be ensured, and the light outlet effect of the optical chip 20 can be effectively ensured and improved.

Example two

The difference between this embodiment and the first embodiment is:

referring to fig. 2, fig. 3 and fig. 5, in the present embodiment, an insulating layer 23 is disposed on a side of the heat sink 10 facing the optical chip 20, and the insulating layer 23 is disposed with a through-hole 22 for inserting the conductive pillar 112 and the first P electrode 21 therein.

Unlike the first embodiment in which the insulating layer 23 is disposed on the side of the optical chip 20 facing the heat sink 10, the present embodiment modifies the insulating layer 23 on the side of the heat sink 10 facing the optical chip 20. Based on the arrangement of this embodiment, when the optical chip 20 is packaged on the heat sink 10 in a posture that the first P electrode 21 faces the heat sink 10, the first P electrode 21 of the optical chip 20 can be inserted into the insertion hole 22, and the first P electrode 21 can be accurately abutted against and electrically connected to the conductive pillar 112 inserted into the insertion hole 22, based on this, the first P electrode 21 can be limited and positioned through the insertion hole 22, so that the first P electrode 21 and the conductive pillar 112 can be quickly and conveniently butted in a high-precision alignment manner, thereby effectively ensuring and improving the matching convenience and the matching precision between the first P electrode 21 and the second P electrode 11, and effectively ensuring and improving the stability and reliability of the electrical connection relationship between the first P electrode 21 and the second P electrode 11.

Moreover, since the plugging hole 22 is formed in the insulating layer 23, it is beneficial to ensure the insulation between the hole wall of the plugging hole 22 and the first P electrode 21 and between the hole wall of the plugging hole 22 and the conductive pillar 112.

In addition, after the optical chip 20 is packaged on the heat sink 10, the conductive plate 111 can be in insulation abutment with the optical chip 20 through the insulating layer 23, so as to stabilize the distance therebetween, thereby being beneficial to ensuring and improving the stability of the relative position and the relative state between the packaged optical chip 20 and the heat sink 10.

EXAMPLE III

The difference between this embodiment and the first embodiment is:

referring to fig. 2, 3 and 5, in the present embodiment, the number of the first P electrodes 21 is two, one of the first P electrodes 21 is electrically connected to the laser 24 and the optical amplifier 26, the other first P electrode 21 is electrically connected to the electroabsorption modulator 25, the number of the second P electrodes 11 is two, and the two second P electrodes 11 are connected to the two first P electrodes 21 in a one-to-one correspondence.

By adopting the above scheme, the laser 24 and the optical amplifier 26 can share one first P electrode 21 to be electrically connected with the corresponding second P electrode 11, and the electroabsorption modulator 25 independently uses one first P electrode 21 to be electrically connected with the corresponding second P electrode 11, so that the electroabsorption modulator 25 can be independently powered and the laser 24 and the optical amplifier 26 can be powered in parallel, and on the basis, the number of the first P electrode 21 and the second P electrode 11 can be correspondingly reduced on the basis of ensuring the reliable operation of the laser 24, the electroabsorption modulator 25 and the optical amplifier 26, and further, the cost of the packaging module of the optical chip can be correspondingly reduced.

Moreover, during the operation of the laser 24, the electroabsorption modulator 25 and the optical amplifier 26, the heat of the laser 24 and the optical amplifier 26 can be conducted to the heat sink 10 through the corresponding second P electrode 11 by one of the first P electrodes 21, and the heat of the electroabsorption modulator 25 can be independently conducted to the heat sink 10 through the corresponding second P electrode 11 by the other first P electrode 21, thereby the heat dissipation performance of the heat sink 10 to the laser 24 and the optical amplifier 26, especially to the electroabsorption modulator 25, can be ensured, the risk and degree of heat accumulation of the optical chip 20 can be further reduced, the risk of deterioration of the light emitting performance of the optical chip 20 and even burnout of the optical chip 20 can be further reduced, the service performance and the service life of the optical chip 20 can be further ensured and improved, and especially the modulation rate of the optical chip 20 can be ensured and improved.

The above description is only exemplary of the present application and should not be taken as limiting the present application, as any modification, equivalent replacement or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.

Claims (10)

1. The packaging module of the optical chip is characterized by comprising a heat sink made of insulating heat conduction materials and the optical chip packaged on the heat sink, wherein a first P electrode is arranged on one side, facing the heat sink, of the optical chip, a second P electrode is arranged on one side, facing the optical chip, of the heat sink, and the second P electrode is abutted to and electrically connected with the first P electrode.

2. The package module of optical chip of claim 1, wherein the second P electrode comprises a conductive plate and a conductive pillar disposed on a side of the conductive plate away from the heat sink, the conductive pillar is abutted and electrically connected to the first P electrode, and a plate surface of the conductive plate protrudes from the optical chip.

3. The optical chip package module according to claim 2, wherein a side of the optical chip facing the heat sink is provided with a plug hole into which the conductive pillar is inserted, a bottom of the plug hole is provided with the first P electrode, and a wall of the plug hole is in insulated contact with both the conductive pillar and the first P electrode.

4. The optical chip package module according to claim 3, wherein the side of the optical chip facing the heat sink is provided with an insulating layer, and the insulating layer is provided with the insertion hole.

5. The optical chip package module according to claim 2, wherein an insulating layer is disposed on a side of the heat sink facing the optical chip, and the insulating layer is provided with a through hole for inserting the conductive pillar and the first P electrode therein.

6. The package module of optical chip according to any one of claims 1 to 5, wherein the optical chip comprises a laser, an electro-absorption modulator and an optical amplifier, which are sequentially connected in an optical exit direction, the laser is configured to be powered on and output an optical signal, the electro-absorption modulator is configured to perform signal modulation on the optical signal output by the laser, and the optical amplifier is configured to amplify the optical signal modulated by the electro-absorption modulator, wherein the optical exit direction is parallel to the heat sink.

7. The package module of optical chip according to claim 6, wherein the number of the first P-electrodes is three, three of the first P-electrodes are respectively disposed on the laser, the electro-absorption modulator and the optical amplifier, the number of the second P-electrodes is three, and three of the second P-electrodes are connected to three of the first P-electrodes in a one-to-one correspondence;

or, the number of the first P electrodes is two, one of the first P electrodes is electrically connected to the laser and the optical amplifier, the other one of the first P electrodes is electrically connected to the electroabsorption modulator, the number of the second P electrodes is two, and the two second P electrodes are connected to the two first P electrodes in a one-to-one correspondence manner.

8. The package module of optical chip of claim 6, wherein a side of the optical chip facing away from the heat sink is provided with a first N electrode, the first N electrode being electrically connected to the laser, the electro-absorption modulator, and the optical amplifier;

and one side of the heat sink facing the optical chip is provided with a second N electrode, the second N electrode and the optical chip are arranged in a staggered manner, and the second N electrode is electrically connected with the first N electrode through a metal lead.

9. The package module of optical chip according to claim 6, wherein the optical chip further comprises a passive region disposed at a side of the optical amplifier along the light exit direction, the passive region being used for passing the optical signal amplified by the optical amplifier with low loss; the passive region at least partially protrudes out of the heat sink along the light emergent direction.

10. The optical chip package module as claimed in claim 9, wherein the optical chip further comprises an anti-reflection film disposed on a side of the inactive region along the light-emitting direction.

Images