CN217361575U - Intelligent power module - Google Patents
Intelligent power module Download PDFInfo
- Publication number
- CN217361575U CN217361575U CN202220981587.9U CN202220981587U CN217361575U CN 217361575 U CN217361575 U CN 217361575U CN 202220981587 U CN202220981587 U CN 202220981587U CN 217361575 U CN217361575 U CN 217361575U
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- CN
- China
- Prior art keywords
- power module
- lead frame
- bonding
- chip
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
Abstract
The utility model provides an intelligent power module, a driving chip; the lead frame is used for bearing the driving chip; each power chip is respectively butted with the driving chip through a first bonding lead; and the edge of the lead frame is provided with a slot at the position opposite to at least one first bonding lead, so that the edge of the lead frame is far away from the first bonding lead. When the first bonding lead is molded, the first bonding lead is deformed and collapsed and cannot be contacted with the lead frame, and the problems of short circuit and the like cannot be caused.
Description
Technical Field
The utility model relates to the field of semiconductor technology, especially, relate to an intelligent power module.
Background
The mainstream IPM module structure (namely, intelligent power module) in the market at present is that a lead frame bears a drive loop, a heat dissipation bottom plate bears a power loop, and a drive chip and a power chip are interconnected by using a bonding wire. With the development of technology, the improvement of power density becomes more and more important, and the smart power module is more and more miniaturized. The drive chip and the power chip in the IPM module are more and more connected by adopting a direct wire bonding manner. Because the size of the driving chip is smaller, bonding wires with smaller wire diameters, such as gold wires or silver wires, are usually intelligently used for bonding led out from the surface of the driving chip. In power module packaging, the problem of large chip spacing, large span between bonding points and long distance is often faced in the butt joint with a power chip. Bonding wires with small wire diameters such as gold wires and silver wires are prone to collapse in lead shape due to impact force of epoxy resin in the module injection molding process, and are in short circuit with a lead frame, so that the rate of finished products is affected.
SUMMERY OF THE UTILITY MODEL
Not enough to prior art, the utility model provides an intelligent power module solves bonding lead deformation when moulding plastics and leads to technical problem such as short circuit with the lead frame contact easily.
A smart power module comprising:
a driver chip;
the lead frame is used for bearing the driving chip;
each power chip is respectively butted with the driving chip through a first bonding lead;
and the edge of the lead frame is provided with a slot at the position opposite to at least one first bonding lead, so that the edge of the lead frame is far away from the first bonding lead.
Furthermore, the lead frame is made of metal.
Further, the metal is copper.
Further, the lead frame includes a first edge along which the power modules are arranged in a row;
further, the shape of the groove is trapezoidal.
Further, the groove is located below the first bonding wire.
Furthermore, the first bonding wire is made of gold or silver.
Furthermore, the intelligent power module is packaged by epoxy resin.
Further, the driving chip is an HVIC chip.
Further, the power chip is an IGBT chip.
The utility model has the advantages of: the edge of the lead frame is provided with a slot at a position opposite to at least one first bonding lead, so that the edge of the lead frame is far away from the first bonding lead, and therefore when the lead frame is molded by injection, the first bonding lead is deformed and collapsed and cannot be contacted with the lead frame, and the problems of short circuit and the like cannot be caused.
Drawings
Fig. 1 is the utility model relates to an intelligent power module's structural schematic.
Wherein the content of the first and second substances,
1-a lead frame;
2-a driving chip;
3-a power chip;
4-a first bonding wire;
5-pin;
6-slotting;
7-second bonding wire.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by a person of ordinary skill in the art without creative efforts belong to the protection scope of the present invention.
It should be noted that, in the present invention, the embodiments and features of the embodiments may be combined with each other without conflict.
The present invention will be further described with reference to the accompanying drawings and specific embodiments, but the present invention is not limited thereto.
Referring to fig. 1, the utility model provides an intelligent power module, include:
a driver chip (2);
a lead frame (1) carrying the driver chip (2);
the power chips (3) are respectively butted with the driving chip (2) through first bonding wires (4);
the edge of the lead frame is provided with a slot (6) at a position opposite to at least one first bonding lead (4) so that the edge of the lead frame (1) is far away from the first bonding lead (4).
Specifically, the lead frame (1) comprises a bearing part bearing the driving chip and a plurality of pins (5) for realizing input and output of the signal and power loop, and the bearing part bears the driving chip. The signal butt joint of the driving chip (2) and the power chip (3) adopts a first bonding lead for direct connection, and finally, the driving chip and the power chip are packaged and molded through an injection molding process.
Specifically, the driving chip (2) is butted with the lead (5) through a second bonding wire (7). The lead frame 1 is realized by bearing a driving chip, and pins (5) led out of the lead frame (1) are used as input and output interfaces of a driving part. The driving chip (2) is connected with the lead frame (1) through a second bonding wire (7) to realize external input and output of the driving circuit. The driving chip (2) is connected with the power chip (3) through a first bonding lead (4) to realize a driving function.
Specifically, the drive chip (2) and the power chip (3) are butted in a mode of directly connecting a first bonding lead (4), and a gate signal sent by the drive chip (2) is directly input to a gate of the power chip (3) through the first bonding lead (4). As the driving chip (2) needs to be butted with a plurality of power chips (3), the first bonding lead which is long in length or perpendicular to the flow direction of injection molding is easy to be collapsed by the flow of epoxy resin during injection molding, namely, certain deformation is generated due to the impact. Therefore, the position of the lead frame, which is easy to be short-circuited with the first bonding lead, is grooved in advance, a certain deformation space is reserved for the first bonding lead, and the first bonding lead cannot be short-circuited with the lead frame (1) after deformation, so that the yield and the reliability of products are improved. As shown in fig. 1, two parallel arrow directions are flow directions of epoxy resin during module injection, when the IPM module is injection-molded, the epoxy resin flows along the arrow directions, the first bonding wire is deformed in the arrow directions after receiving impact force of the epoxy resin, the solid line shows the position of the first bonding wire (4) interconnecting the driver chip (2) and the power chip (3) before injection, and the dotted line shows a possible position of the first bonding wire after receiving the impact of the mold flow of the epoxy resin after injection. Because the notch (6) is reserved for avoiding the collision between the lead frame (1) and the first bonding lead (4), the deformed first bonding lead (4) cannot be short-circuited with the lead frame (1), and the yield and the reliability of products are improved.
Furthermore, the lead frame (1) is made of metal.
Further, the metal is copper.
Further, the lead frame (1) comprises a first edge along which the power modules (3) are arranged in a row;
further, the shape of the slot (6) is a trapezoid shape.
Further, the slot (6) is located below the first bonding wire (4).
Furthermore, the first bonding wire (4) is made of gold or silver.
Furthermore, the intelligent power module is packaged by epoxy resin.
Further, the driving chip (2) is an HVIC chip.
Further, the power chip (3) is an IGBT chip.
Specifically, the slot is designed around the driving chip. The drive chip adopts a bare chip.
The utility model provides a rational in infrastructure, realize simple and convenient, reliable design, it is easy to open a slot in advance with the position of first bonding lead short circuit at the lead frame, and the position of cooperation adjustment driver chip makes the bonding lead can not be with the lead frame short circuit after being collapsed to improve the yield and the reliability of product yet.
The above description is only an example of the preferred embodiment of the present invention, and not intended to limit the scope of the present invention, and those skilled in the art should be able to realize the equivalent alternatives and obvious variations of the present invention.
Claims (10)
1. A smart power module, comprising:
a driver chip (2);
a lead frame (1) carrying the driving chip (2);
the power chips (3) are respectively butted with the driving chip (2) through first bonding wires (4);
the edge of the lead frame is provided with a slot (6) at a position opposite to at least one first bonding lead (4) so that the edge of the lead frame (1) is far away from the first bonding lead (4).
2. A smart power module according to claim 1, characterized in that the lead frame (1) is made of metal.
3. The smart power module of claim 2 wherein said metal is copper.
4. A smart power module according to claim 1, characterized in that the lead frame (1) comprises a first edge, along which the power chips (3) are arranged in rows.
5. A smart power module according to claim 1, characterized in that the shape of the slot (6) is trapezoidal.
6. A smart power module according to claim 1, characterized in that the slot (6) is located below the first bonding wire (4).
7. A smart power module according to claim 1, wherein the first bonding wire (4) is made of gold or silver.
8. The smart power module of claim 1 wherein said smart power module is encapsulated with an epoxy.
9. A smart power module according to claim 1, characterized in that the driver chip (2) is an HVIC chip.
10. A smart power module according to claim 1, characterized in that the power chips (3) are IGBT chips.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220981587.9U CN217361575U (en) | 2022-04-26 | 2022-04-26 | Intelligent power module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220981587.9U CN217361575U (en) | 2022-04-26 | 2022-04-26 | Intelligent power module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN217361575U true CN217361575U (en) | 2022-09-02 |
Family
ID=83056667
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202220981587.9U Active CN217361575U (en) | 2022-04-26 | 2022-04-26 | Intelligent power module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN217361575U (en) |
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2022
- 2022-04-26 CN CN202220981587.9U patent/CN217361575U/en active Active
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