CN217360340U - Photosensitive triode detection circuit - Google Patents
Photosensitive triode detection circuit Download PDFInfo
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- CN217360340U CN217360340U CN202122722283.9U CN202122722283U CN217360340U CN 217360340 U CN217360340 U CN 217360340U CN 202122722283 U CN202122722283 U CN 202122722283U CN 217360340 U CN217360340 U CN 217360340U
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- phototriode
- triode
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Abstract
The utility model provides a phototriode detection circuitry, it includes phototriode D6, PNP type triode Q3, DC power supply VCC, resistance R7, R8, R9 and sampling circuit, phototriode D6's collecting electrode is connected with DC power supply VCC through resistance R7, still be connected with triode Q3's base through resistance R8, phototriode D6's projecting pole ground connection, triode Q3's projecting pole is connected with DC power supply VCC, triode Q3's collecting electrode passes through resistance R9 ground connection, sampling circuit is connected with triode Q3's collecting electrode. Adopt the utility model discloses a phototriode detection circuitry, multiplicable phototriode's detection distance.
Description
Technical Field
The utility model relates to an infrared photoelectric sensor technical field specifically is a photosensitive triode detection circuitry.
Background
With the increase of the detection distance, the power of an infrared emission tube of the existing infrared photoelectric sensor is inevitably increased, so that the infrared light penetration capability of the existing infrared photoelectric sensor is stronger. Therefore, if the detection distance of a thin-walled object such as a transparent test tube is long, the object is easily penetrated by infrared rays, thereby causing a problem of missing detection.
When the distance between the correlation transmitting end and the receiving end reaches 45cm, the test tube can not be detected due to insufficient shielding of the infrared light beam when the test tube is at the middle position of detection. The infrared beam is not a very thin beam line like a laser beam but a beam vertically radiating like a cone, and when the object to be detected is too small and is too far away from the emitting end, the condition of insufficient shielding light can occur, so that the object cannot be detected.
As shown in fig. 1, the infrared receiving tube in the infrared correlation lamp bead is a photosensitive triode D2, which is turned on when receiving infrared light and turned off when not receiving light.
As shown in fig. 2, due to an electrical characteristic of the phototransistor itself, the distance that the phototransistor detects decreases as the current that the phototransistor passes increases.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a phototriode detection circuitry to increase phototriode's detection distance.
The embodiment of the utility model provides an in, a phototriode detection circuitry is provided, it includes phototriode D6, PNP type triode Q3, DC power supply VCC, resistance R7, R8, R9 and sampling circuit, phototriode D6's collecting electrode is connected with DC power supply VCC through resistance R7, still be connected with triode Q3's base through resistance R8, phototriode D6's projecting pole ground connection, triode Q3's projecting pole is connected with DC power supply VCC, triode Q3's collecting electrode passes through resistance R9 ground connection, sampling circuit is connected with triode Q3's collecting electrode.
In the embodiment of the present invention, the detection circuit of the photo transistor further includes a light emitting diode D5 disposed between the emitter of the transistor Q3 and the dc power VCC.
In the embodiment of the utility model, the model of phototriode D6 is MHL524PT03 BRT.
In the embodiment of the present invention, the model of the transistor Q3 is S8550.
Compared with the prior art, adopt this the utility model discloses a phototriode detection circuitry, one-level triode Q3 has been added into on the basis of original infrared receiver tube circuit more, triode Q3's break-make is controlled to the break-make through phototriode D6, the current of phototriode D6 of flowing through originally is shunted by triode Q3's base and is flowed into triode Q3's collecting electrode, thereby the current of phototriode D6 of flowing through has been reduced, make phototriode D6's detection distance can reach the biggest.
Drawings
Fig. 1 is a schematic diagram of a prior art phototransistor detection circuit.
Fig. 2 is an electrical characteristic diagram of a phototransistor.
Fig. 3 is a schematic structural diagram of a phototransistor detection circuit according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the present invention will be further described in detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The following describes the implementation of the present invention in detail with reference to specific embodiments.
As shown in fig. 3, in the embodiment of the utility model, a phototriode detection circuit is provided, it includes phototriode D6, PNP type triode Q3, DC power supply VCC, resistance R7, R8, R9 and sampling circuit, phototriode D6's collecting electrode is connected with DC power supply VCC through resistance R7, still be connected with triode Q3's base through resistance R8, phototriode D6's projecting pole ground connection, triode Q3's projecting pole is connected with DC power supply VCC, triode Q3's collecting electrode is through resistance R9 ground connection, sampling circuit is connected with triode Q3's collecting electrode, a collecting electrode voltage for 3 adopts, and judge in sending sampling voltage to outside MCU 3, thereby make outside MCU learn the state of phototriode D6. Further, the detection circuit of the phototransistor further includes a light emitting diode D5 disposed between the emitter of the transistor Q3 and the dc power VCC, and configured to indicate the state of the phototransistor D6. The anode of the light emitting diode D5 is connected to the dc power VCC, and the cathode is connected to the emitter of the transistor Q3.
The embodiment of the utility model provides an in, phototriode D6 'S model is MHL524PT03BRT, and triode Q3' S model is S8550.
The operating principle of the phototriode detection circuit is as follows:
when the phototriode D6 does not receive the infrared light emitted by the emitting end, the collector and the emitter of the phototriode D6 are in an off state, the base voltage of the triode Q3 is higher than the emitter voltage, and therefore the phototriode Q3 is also in the off state, the collector voltage of the triode Q3 is zero, and the light-emitting diode D5 has no current and is not bright.
When the phototriode D6 receives infrared light emitted by an emitting end, a collector electrode and an emitting electrode of the phototriode D6 are in a conducting state, the base voltage of the triode Q3 is pulled down, the base voltage of the triode Q3 is lower than the emitter voltage, and therefore the phototriode Q3 is in the conducting state, the sampling circuit can collect the collector voltage of the triode Q3, the current which originally flows through the phototriode D6 is shunted by the base electrode of the triode Q3 and flows into the collector electrode of the triode Q3, and therefore the current which flows through the phototriode D6 is reduced. Meanwhile, the light emitting diode D5 emits light when current flows through it.
In conclusion, adopt this the utility model discloses a phototriode detection circuitry, one-level triode Q3 has been added more on the basis of original infrared receiver tube circuit, the break-make that comes control triode Q3 through phototriode D6, the current of phototriode D6 of flowing through originally is shunted by triode Q3's base and is flowed into triode Q3's collecting electrode, thereby the current of phototriode D6 of flowing through has been reduced, make the detection distance of phototriode D6 can reach the biggest.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not intended to limit the present invention, and any modifications, equivalents, improvements, etc. made within the spirit and principles of the present invention should be included within the scope of the present invention.
Claims (4)
1. The utility model provides a phototriode detection circuitry, a serial communication port, including phototriode D6, PNP type triode Q3, DC power supply VCC, resistance R7, R8, R9 and sampling circuit, the collecting electrode of phototriode D6 is connected with DC power supply VCC through resistance R7, still be connected with triode Q3's base through resistance R8, phototriode D6's projecting pole ground connection, triode Q3's projecting pole is connected with DC power supply VCC, triode Q3's collecting electrode is through resistance R9 ground connection, sampling circuit is connected with triode Q3's collecting electrode.
2. The triac detection circuit of claim 1, further comprising a light emitting diode D5 disposed between the emitter of transistor Q3 and a dc power source VCC for indicating the status of the triac D6.
3. The phototransistor detection circuit of claim 1, wherein the phototransistor D6 is model MHL524PT03 BRT.
4. The phototransistor detection circuit as set forth in claim 1, wherein the transistor Q3 is type S8550.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122722283.9U CN217360340U (en) | 2021-11-09 | 2021-11-09 | Photosensitive triode detection circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122722283.9U CN217360340U (en) | 2021-11-09 | 2021-11-09 | Photosensitive triode detection circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN217360340U true CN217360340U (en) | 2022-09-02 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202122722283.9U Active CN217360340U (en) | 2021-11-09 | 2021-11-09 | Photosensitive triode detection circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN217360340U (en) |
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2021
- 2021-11-09 CN CN202122722283.9U patent/CN217360340U/en active Active
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