CN217282884U - Multi-mode multi-frequency power amplifier, radio frequency system and communication equipment - Google Patents
Multi-mode multi-frequency power amplifier, radio frequency system and communication equipment Download PDFInfo
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- CN217282884U CN217282884U CN202220317855.7U CN202220317855U CN217282884U CN 217282884 U CN217282884 U CN 217282884U CN 202220317855 U CN202220317855 U CN 202220317855U CN 217282884 U CN217282884 U CN 217282884U
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Abstract
The application discloses multimode multifrequency power amplifier, radio frequency system and communications facilities, multimode multifrequency power amplifier includes: a control and low frequency amplification module for amplifying a low frequency band input signal to provide a low frequency band output signal and outputting a control signal based on an input signal type of the multi-mode multi-band power amplifier; the non-low frequency amplification module is used for amplifying the middle-frequency band input signal to provide a middle-frequency band output signal and amplifying the high-frequency band input signal to provide a high-frequency band output signal; and the switch module is used for selectively outputting the output signals of the corresponding types according to the control signals, and the control and low-frequency amplification module is prepared by adopting a CMOS (complementary metal oxide semiconductor) process. The multimode multi-frequency power amplifier provided by the application integrates the low-frequency amplifying circuit and the control circuit on the same die by adopting a CMOS (complementary metal oxide semiconductor) process, so that the production cost is reduced, the integration level of the multimode multi-frequency power amplifier is improved, and the electrical performance of the multimode multi-frequency power amplifier is further ensured.
Description
Technical Field
The utility model relates to an electronic communication technical field, more specifically relates to a multimode multifrequency power amplifier, radio frequency system and communications facilities.
Background
With the continuous improvement of living standard, the performance requirements of consumers on communication equipment are higher and higher. The power amplifier is one of the important components in the rf front-end system, and its performance determines the endurance time and communication quality of the communication device. Since the 3G era, mobile communication networks have been in a state in which multiple communication networks coexist. With the advent of the 4G and 5G, the frequency band required for communication devices has exploded, and the number of power amplifiers in communication devices has also exploded.
Because of the increasing complexity of the rf front-end system, how to provide a lower cost, higher performance, and higher integration level power amplifier in the rf front-end system is the focus of current research.
SUMMERY OF THE UTILITY MODEL
In order to solve the problems existing in the prior art, the utility model provides a multimode multifrequency power amplifier, radio frequency system and communication equipment that the integrated level is high, with low costs and can satisfy higher output power and higher linearity.
According to the utility model discloses an aspect provides a multimode multifrequency power amplifier, include: a control and low frequency amplification module for amplifying a low frequency band input signal to provide a low frequency band output signal and outputting a control signal based on an input signal type of the multi-mode multi-band power amplifier;
the non-low frequency amplification module is used for amplifying the middle-frequency band input signal to provide a middle-frequency band output signal and amplifying the high-frequency band input signal to provide a high-frequency band output signal; and
the switch module selects to output the output signal of the corresponding type according to the control signal,
the control and low-frequency amplification module is prepared by adopting a CMOS (complementary metal oxide semiconductor) process.
Optionally, the input signal comprises a signal of an LTE frequency band.
Optionally, the non-low frequency amplification module includes:
the interstage processing module is used for matching and amplifying the intermediate frequency input signal to obtain a first intermediate signal, and matching and amplifying the high frequency input signal to obtain a second intermediate signal;
an intermediate frequency amplification module, connected to the interstage processing module, for amplifying the first intermediate signal to output the intermediate frequency band output signal; and
a high frequency amplification module connected with the interstage processing module for amplifying the second intermediate signal to output the high frequency band output signal.
Optionally, the interstage processing module comprises:
an input matching unit which performs input matching processing on the intermediate frequency band input signal and the high frequency band input signal;
and the interstage amplification processing unit is connected with the input matching unit and correspondingly outputs the first intermediate signal or the second intermediate signal based on the intermediate-frequency band input signal or the high-frequency band input signal after input matching processing.
Optionally, a set of the interstage amplification processing units comprises:
the interstage amplifying unit is connected with the input matching unit or the previous interstage matching unit and is used for amplifying the received signal; and
and the interstage matching unit is connected with the interstage amplifying unit of the stage and is used for matching the signal amplified by the stage.
Optionally, the intermediate frequency amplifying module includes:
the intermediate frequency amplification unit is used for receiving the first intermediate signal and amplifying the first intermediate signal; and
and the intermediate frequency output matching unit is connected with the intermediate frequency amplification unit and outputs the intermediate frequency band output signal.
Optionally, the high frequency amplification module includes:
the high-frequency amplification unit is used for receiving the second intermediate signal and amplifying the second intermediate signal; and
and the high-frequency output matching unit is connected with the high-frequency amplification unit and outputs the high-frequency-band output signal.
Optionally, the switch module comprises:
a first switching unit outputting the low frequency band output signal according to the control signal;
the second switch unit outputs the intermediate frequency band output signal according to the control signal; and
and a third switching unit outputting the high-band output signal according to the control signal.
According to the utility model discloses in the second aspect of the embodiment, still provide a radio frequency system, include:
the multi-mode multi-band power amplifier as described above;
and the radio frequency transceiver is connected with the multi-mode multi-frequency power amplifier and is used for transmitting and/or receiving an output signal.
According to the third aspect of the embodiments of the present invention, there is provided a communication apparatus, including:
a radio frequency system as described above.
The multimode multi-frequency power amplifier integrates the low-frequency amplifying circuit and the control circuit on the same die by adopting a CMOS (complementary metal oxide semiconductor) process, so that the production cost is reduced, the integration level of the multimode multi-frequency power amplifier is improved, and the electrical performance of the multimode multi-frequency power amplifier is ensured.
Furthermore, in the multi-mode multi-frequency power amplifier provided by the application, for example, a gallium arsenide process is adopted to integrate the high-frequency amplification circuit and the medium-frequency amplification circuit on the same die, and a group of interstage amplification processing units are shared to process the medium-frequency band input signal or the high-frequency band input signal, so that the chip area of the multi-mode multi-frequency power amplifier is reduced.
Furthermore, the switch module provided by the application integrates the low-frequency band switch circuit, the medium-frequency band switch circuit and the high-frequency band switch circuit on the same die, so that the chip area and the preparation cost of the multi-mode multi-frequency power amplifier are reduced.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent from the following description of the embodiments of the present invention with reference to the accompanying drawings.
Fig. 1 shows a schematic structure of a multi-mode multi-band power amplifier.
Fig. 2 shows a block diagram of a multi-mode multi-band power amplifier provided in an embodiment of the present application.
Fig. 3 shows a block diagram of a non-low frequency amplification module in a multi-mode multi-band power amplifier according to an embodiment of the present disclosure.
Detailed Description
The invention will be described in more detail below with reference to the accompanying drawings. Like elements in the various figures are denoted by like reference numerals. For purposes of clarity, the various features in the drawings are not necessarily drawn to scale. Moreover, certain well-known elements may not be shown in the figures.
In the following description, numerous specific details of the invention, such as structure, materials, dimensions, processing techniques and techniques of the devices are described to provide a more thorough understanding of the invention. However, as will be understood by those skilled in the art, the present invention may be practiced without these specific details.
The multi-mode multi-frequency power amplifier provided by the application can be applied to radio frequency systems of various communication devices. The communication device is, for example, a portable electronic device, a wearable electronic device, an in-vehicle electronic device, or other wireless processing electronic devices. The multimode multi-frequency power amplifier is used for performing power amplification on input signals of various frequency bands under various mobile communication network systems to obtain transmission signals meeting requirements. Each module referred to below is understood, for example, as a module with internal circuitry integrated together.
Fig. 1 shows a schematic diagram of a multi-mode multi-band power amplifier.
As shown in fig. 1, the multi-mode multi-band power amplifier 100 includes a high frequency amplification module 110, a middle frequency amplification module 120, a low frequency amplification module 130, a control module 140, a first switch module 150, a second switch module 160, and a third switch module 170.
The input end of the high-frequency amplification module 110 is connected to the high-frequency input interface of the multi-mode multi-band power amplifier 100, and is configured to perform power amplification on the high-frequency input signal Gin, and the output end of the high-frequency amplification module 110 provides the high-frequency output signal Gout. The high-frequency amplification module 110 includes, for example, an input matching circuit, a cascaded multi-stage amplification circuit, and an output matching circuit.
The input terminal of the first switch module 150 is connected to the output terminal of the high-frequency amplifying module 110, and is configured to be selectively turned on to provide the high-frequency band output signal Gout to the high-frequency band output interface of the multi-mode multi-frequency power amplifier 100, and to selectively output the high-frequency band output signal Gout through the high-frequency band output interface.
The input end of the intermediate frequency amplification module 120 is connected to the intermediate frequency input interface of the multi-mode multi-band power amplifier 100, and is configured to perform power amplification on the intermediate frequency input signal Min, and the output end of the intermediate frequency amplification module 110 provides the intermediate frequency output signal Mout. The intermediate frequency amplifying module 120 includes, for example, an input matching circuit, a cascaded multi-stage amplifying circuit, and an output matching circuit.
The input end of the second switch module 160 is connected to the output end of the intermediate frequency amplifying module 120, and is configured to selectively switch on to provide the intermediate frequency output signal Mout to the intermediate frequency output interface of the multi-mode multi-frequency power amplifier 100, and selectively output the intermediate frequency output signal Gout through the intermediate frequency output interface.
The input end of the low frequency amplification module 130 is connected to the low frequency band input interface of the multi-mode multi-band power amplifier 100, and is configured to perform power amplification on the low frequency band input signal Lin, and the output end of the low frequency amplification module 130 provides the low frequency band output signal Lout. The low frequency amplification module 130 includes, for example, an input matching circuit, a cascaded multi-stage amplification circuit, and an output matching circuit.
The input end of the third switching module 170 is connected to the output end of the low frequency amplifying module 130, and is configured to select to be turned on to provide the low frequency band output signal Lout to the low frequency band output interface of the multi-mode multi-frequency power amplifier 100, and to select to output the low frequency band output signal Lout through the low frequency band output interface.
The control module 140 is respectively connected to the high-frequency amplification module 110, the intermediate-frequency amplification module 120, and the low-frequency amplification module 130, so as to selectively turn on the first switch module 150, the second switch module 160, or the third switch module 170 according to a type of the received input signal (e.g., determined according to a frequency band of the input signal), so that the corresponding output port of the multi-mode multi-frequency power amplifier 100 outputs an output signal corresponding to the input signal. In other embodiments, the control module 140 is connected to the input ports of the multi-mode multi-band power amplifier 100, for example, to generate corresponding control signals to selectively turn on the first switch module 150, the second switch module 160, or the third switch module 170 based on the input signals or the input commands, respectively.
The multi-mode multi-band power amplifier 100 at least includes seven dies, wherein the first switch module 150, the second switch module 160, and the third switch module 170 provide switching functions for different bands. The multi-mode multi-band power amplifier 100 occupies more substrate space, which affects the overall performance of the radio frequency system in which the multi-mode multi-band power amplifier 100 is located, and under the condition that the performance requirements such as output power and linearity are higher (such as HPUE, 5G, etc.), the multi-mode multi-band power amplifier 100 cannot meet the index requirements.
The following provides a multi-mode multi-band power amplifier with high integration, low cost, and high output power and linearity.
Fig. 2 shows a block diagram of a multi-mode multi-band power amplifier provided in an embodiment of the present application. Fig. 3 shows a block diagram of a non-low frequency amplification module in a multi-mode multi-band power amplifier according to an embodiment of the present disclosure.
As shown in fig. 2, the multi-mode multi-band power amplifier 200 includes a non-low-frequency amplification module 210, a control and low-frequency amplification module 220, and a switch module 230.
The non-low frequency amplification module 210 is used for amplifying the middle band input signal to provide a middle band output signal and amplifying the high band input signal to provide a high band output signal. The non-low frequency amplification module 210 is manufactured by, for example, a gallium arsenide process.
As shown in fig. 3, the non-low frequency amplification module 210 includes an interstage processing module 260, a high frequency amplification module 270, and an intermediate frequency amplification module 280. The interstage processing module 260 is configured to match and amplify the intermediate frequency input signal Min to obtain a first intermediate signal, and match and amplify the high frequency input signal Gin to obtain a second intermediate signal. The intermediate frequency amplifying module 280 is connected to the interstage processing module 260, and is configured to amplify the first intermediate signal to output an intermediate frequency band output signal Mout. The high frequency amplifying module 270 is connected to the inter-stage processing module 260, and is configured to amplify the second intermediate signal to output a high frequency band output signal Gout. Interstage processing module 260 includes input matching unit 211 and at least one set of interstage amplification processing units. The input matching unit 211 performs input matching processing on the mid-band input signal Min and the high-band input signal Gin. At least one set of interstage amplification processing units is connected to the input matching unit 211, and outputs a first intermediate signal or a second intermediate signal based on the input matching processed middle-band input signal or high-band input signal. Furthermore, the group of interstage amplification processing units comprise an interstage amplification unit and an interstage matching unit, wherein the interstage amplification unit is connected with the input matching unit or the previous interstage matching unit and is used for amplifying the received signals. The interstage matching unit is connected with the interstage amplifying unit of the current stage and used for matching the amplified signal of the current stage. In this embodiment, the interstage processing module 260 includes, for example, two sets of interstage amplification processing units. Including a first inter-stage amplification unit 212, a first inter-stage matching unit 213, a second inter-stage amplification unit 214, and a second inter-stage matching unit 215. The first inter-stage amplifying unit 212 is connected to an output terminal of the input matching unit 211, an input terminal of the first inter-stage matching unit 213 is connected to an output terminal of the first inter-stage amplifying unit 212, an output terminal of the first inter-stage matching unit 213 is connected to an input terminal of the second inter-stage amplifying unit 214, an input terminal of the second inter-stage matching unit 215 is connected to an output terminal of the second inter-stage amplifying unit 214, and an input terminal of the second inter-stage matching unit 215 provides the first intermediate signal and/or the second intermediate signal. The high-frequency amplification block 270 includes a high-frequency amplification unit 216 and a high-frequency output matching unit 217. The high-frequency amplification unit 216 receives the second intermediate signal and amplifies the second intermediate signal. The high-frequency output matching unit 217 is connected to the high-frequency amplifying unit 216, and outputs a high-frequency band output signal Gout. The intermediate frequency amplifying module 280 includes an intermediate frequency amplifying unit 218 and an intermediate frequency output matching unit 219. The intermediate frequency amplifying unit 218 receives the first intermediate signal and amplifies the first intermediate signal. The intermediate frequency output matching unit 219 is connected to the intermediate frequency amplifying unit 218, and outputs an intermediate frequency band output signal Mout. The interstage processing module 260 is configured to support a pre-stage amplifying the mid-band input signal Min and/or the high-band input signal Gin.
As shown in fig. 2, the control and low frequency amplifying module 220 is configured to amplify the low frequency band input signal Lin to provide a low frequency band output signal Lout, and output a control signal based on the type of the input signal received by the input interface of the multi-mode multi-band power amplifier 200. The control and low frequency amplification module 220 is manufactured by, for example, a CMOS process. Wherein the input signal received by the input interface of the multi-mode multi-band power amplifier 200 comprises a signal in the LTE frequency band, for example. The input end of the control and low-frequency amplification module 220 is connected to the low-frequency input interface of the multi-mode multi-band power amplifier 200, and is also connected to the input end of the non-low-frequency amplification module 210 or directly connected to the high-frequency input interface and the medium-frequency input interface of the multi-mode multi-band power amplifier 200. Further, the control and low frequency amplification module 220 controls the first inter-stage amplification unit 212, the second inter-stage amplification unit 214, the high frequency amplification unit 216, and the intermediate frequency amplification unit 218 in the non-low frequency amplification module 210, respectively. Specifically, the control and low-frequency amplifying module 220 controls the first inter-stage amplifying unit 212, the second inter-stage amplifying unit 214, and the high-frequency amplifying unit 216 to be turned on when the high-frequency band signal is turned on (the high-frequency band output signal Gout is obtained according to the high-frequency band input signal Gin through the non-low-frequency amplifying module 210) based on the type of the input signal received by the input interface of the multi-mode multi-band power amplifier 200. The control and low-frequency amplification module 220 controls the first inter-stage amplification unit 212, the second inter-stage amplification unit 214, and the intermediate-frequency amplification unit 218 to be turned on when the intermediate-frequency signal is turned on (the intermediate-frequency output signal Mout is obtained according to the intermediate-frequency input signal Min via the non-low-frequency amplification module 210) based on the type of the input signal received by the input interface of the multi-mode multi-band power amplifier 200.
The switch module 230 is connected to the control and low frequency amplifying module 220, and selects to output an output signal of a type corresponding to the input signal according to the control signal. The switch module 230 includes a first switch unit, a second switch unit, and a third switch unit, and further selectively switches at least one switch unit to be turned on by a control signal, so as to output a corresponding output signal. The first switch unit selects whether to be conducted according to the control signal, and outputs a low-frequency output signal Lout under the condition of conduction. The second switch unit selects whether to be conducted according to the control signal, and outputs a middle-frequency output signal Mout under the conducting condition. The third switching unit selects whether to be turned on according to the control signal, and outputs a high-band output signal Gout in the case of being turned on.
The multimode multi-frequency power amplifier provided by the application integrates the low-frequency amplifying circuit and the control circuit on the same die by adopting a CMOS (complementary metal oxide semiconductor) process, so that the production cost is reduced, the integration level of the multimode multi-frequency power amplifier is improved, and the electrical performance of the multimode multi-frequency power amplifier is further ensured. Furthermore, in the multi-mode multi-frequency power amplifier provided by the application, for example, a gallium arsenide process is adopted to integrate the high-frequency amplification circuit and the medium-frequency amplification circuit on the same die, and a group of interstage amplification processing units are shared to process the medium-frequency band input signal or the high-frequency band input signal, so that the chip area of the multi-mode multi-frequency power amplifier is reduced. Furthermore, the switch module provided by the application integrates the low-frequency band switch circuit, the medium-frequency band switch circuit and the high-frequency band switch circuit on the same die, so that the chip area and the preparation cost of the multi-mode multi-frequency power amplifier are reduced.
The application also provides a radio frequency system, such as a radio frequency front end system which can be a communication device. The radio frequency system comprises a radio frequency transceiver, a multi-mode multi-frequency power amplifier and an antenna. The radio frequency transceiver is used for receiving or transmitting low-frequency band signals, middle-frequency band signals and high-frequency band signals. The multimode multi-frequency power amplifier is used for amplifying the input signal power and outputting the amplified input signal power. The antenna is connected with the output end of the multimode multi-frequency power amplifier. The structure of the multi-mode multi-band power amplifier is described above. And will not be described in detail herein.
The application also provides a communication device comprising the radio frequency system.
Also, those of ordinary skill in the art will recognize that the various example structures and methods described in connection with the embodiments disclosed herein can be implemented with various configurations or adjustments, with reasonable variations on each structure or structure, but such implementations should not be considered as beyond the scope of the present application. Furthermore, it should be understood that the connection relationship between the components of the amplifier in the foregoing figures in the embodiments of the present application is an illustrative example, and does not set any limit to the embodiments of the present application.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
In accordance with the embodiments of the present invention as set forth above, these embodiments are not exhaustive and do not limit the invention to the precise embodiments described. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and its practical application, to thereby enable others skilled in the art to best utilize the invention and its various embodiments with various modifications as are suited to the particular use contemplated. The present invention is limited only by the claims and their full scope and equivalents.
Claims (10)
1. A multi-mode multi-band power amplifier, comprising:
a control and low frequency amplification module for amplifying a low frequency band input signal to provide a low frequency band output signal and outputting a control signal based on an input signal type of the multi-mode multi-band power amplifier;
the non-low frequency amplification module is used for amplifying the middle-frequency band input signal to provide a middle-frequency band output signal and amplifying the high-frequency band input signal to provide a high-frequency band output signal; and
the switch module selects to output the output signal of the corresponding type according to the control signal,
the control and low-frequency amplification module is prepared by adopting a CMOS (complementary metal oxide semiconductor) process.
2. The multi-mode multi-band power amplifier of claim 1, wherein the input signal comprises a signal in the LTE band.
3. The multi-mode multi-band power amplifier of claim 1, wherein the non-low frequency amplification module comprises:
the interstage processing module is used for matching and amplifying the middle-frequency band input signal to obtain a first intermediate signal, and matching and amplifying the high-frequency band input signal to obtain a second intermediate signal;
an intermediate frequency amplification module, connected to the interstage processing module, for amplifying the first intermediate signal to output the intermediate frequency band output signal; and
a high frequency amplification module connected with the interstage processing module for amplifying the second intermediate signal to output the high frequency band output signal.
4. The multi-mode multi-band power amplifier of claim 3, wherein the interstage processing module comprises:
an input matching unit which performs input matching processing on the intermediate frequency band input signal and the high frequency band input signal;
and the interstage amplification processing unit is connected with the input matching unit and correspondingly outputs the first intermediate signal or the second intermediate signal based on the intermediate-frequency band input signal or the high-frequency band input signal subjected to input matching processing.
5. The multi-mode multi-band power amplifier according to claim 4, wherein a group of the inter-stage amplification processing units comprises:
the interstage amplifying unit is connected with the input matching unit or the previous interstage matching unit and is used for amplifying the received signal; and
and the interstage matching unit is connected with the interstage amplifying unit of the stage and is used for matching the signal amplified by the stage.
6. The multi-mode multi-band power amplifier of claim 3, wherein the intermediate frequency amplifying module comprises:
the intermediate frequency amplification unit is used for receiving the first intermediate signal and amplifying the first intermediate signal; and
and the intermediate frequency output matching unit is connected with the intermediate frequency amplification unit and outputs the intermediate frequency band output signal.
7. The multi-mode multi-band power amplifier of claim 3, wherein the high frequency amplification module comprises:
the high-frequency amplification unit is used for receiving the second intermediate signal and amplifying the second intermediate signal; and
and the high-frequency output matching unit is connected with the high-frequency amplification unit and outputs the high-frequency-band output signal.
8. The multi-mode multi-band power amplifier of claim 1, wherein the switching module comprises:
a first switching unit outputting the low frequency band output signal according to the control signal;
a second switching unit outputting the middle frequency band output signal according to the control signal; and
and a third switching unit outputting the high-band output signal according to the control signal.
9. A radio frequency system, comprising:
the multi-mode multi-band power amplifier of any one of claims 1-8;
and the radio frequency transceiver is connected with the multi-mode multi-frequency power amplifier and is used for transmitting and/or receiving an output signal.
10. A communication device, comprising:
the radio frequency system of claim 9.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115882892A (en) * | 2023-03-08 | 2023-03-31 | 杭州地芯科技有限公司 | Radio frequency front-end chip, circuit structure and radio frequency communication device |
| CN116707462A (en) * | 2023-03-10 | 2023-09-05 | 振弦(苏州)微电子有限公司 | Medium-high frequency band PA and multimode multi-band PA chip suitable for 4G wireless communication |
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2022
- 2022-02-17 CN CN202220317855.7U patent/CN217282884U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115882892A (en) * | 2023-03-08 | 2023-03-31 | 杭州地芯科技有限公司 | Radio frequency front-end chip, circuit structure and radio frequency communication device |
| CN116707462A (en) * | 2023-03-10 | 2023-09-05 | 振弦(苏州)微电子有限公司 | Medium-high frequency band PA and multimode multi-band PA chip suitable for 4G wireless communication |
| CN116707462B (en) * | 2023-03-10 | 2024-02-13 | 振弦(苏州)微电子有限公司 | Medium-high frequency band PA and multimode multi-band PA chip suitable for 4G wireless communication |
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