CN217215088U - Temperature-adjustable terahertz absorber based on composite all-dielectric - Google Patents
Temperature-adjustable terahertz absorber based on composite all-dielectric Download PDFInfo
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- CN217215088U CN217215088U CN202220905635.6U CN202220905635U CN217215088U CN 217215088 U CN217215088 U CN 217215088U CN 202220905635 U CN202220905635 U CN 202220905635U CN 217215088 U CN217215088 U CN 217215088U
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Abstract
The utility model relates to a wave absorber technical field, concretely relates to adjustable terahertz absorber of temperature based on compound all medium, including a plurality of terahertz absorber units, a plurality of terahertz absorber units are the array and distribute, and adjacent terahertz absorber unit fixed connection, and every terahertz absorber unit includes dielectric layer, control by temperature change layer and stratum basale, and dielectric layer, control by temperature change layer and stratum basale from the top down pile up in proper order. The physical property of the temperature control layer is changed by heating the temperature-adjustable terahertz absorber based on the composite all-dielectric, so that the performance of the temperature-adjustable terahertz absorber based on the composite all-dielectric is changed, and the active control of the absorption rate of the temperature-adjustable terahertz absorber based on the composite all-dielectric is realized.
Description
Technical Field
The utility model relates to a wave-absorbing device technical field especially relates to an adjustable terahertz of temperature absorber based on compound all-dielectric.
Background
A Terahertz absorber (Terahertz absorber) refers to a device that absorbs most of the energy of an incident Terahertz wave at a specific frequency so that it has almost no energy reflection. The terahertz wave absorber has very great potential application value in the aspects of electromagnetic stealth, thermal radiation, sensing, thermal imaging, bolometer and the like. Therefore, the development of the terahertz wave absorber is very important.
The traditional metamaterial wave absorber can only work under a certain fixed absorption rate, and if the absorption rate of the traditional metamaterial wave absorber to electromagnetic waves needs to be changed, the traditional metamaterial wave absorber needs to be redesigned and processed, so that the cost is increased, and inconvenience is brought to research work.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide an adjustable terahertz of temperature absorber based on compound all dielectric aims at solving the problem that traditional metamaterial wave absorber can only work under certain fixed absorption rate.
In order to achieve the purpose, the utility model provides a temperature-adjustable terahertz absorber based on a composite all-dielectric, which comprises a plurality of terahertz absorber units, wherein the plurality of terahertz absorber units are distributed in a NxN manner, N is a natural number, and the adjacent terahertz absorber units are fixedly connected;
each terahertz absorber unit comprises a medium layer, a temperature control layer and a basal layer, wherein the medium layer, the temperature control layer and the basal layer are sequentially stacked from top to bottom.
The temperature control layer is made of vanadium dioxide or indium antimonide.
Wherein, the material of the substrate layer is silicon dioxide or silicon.
Each medium layer comprises a first medium ring and a second medium ring, the second medium ring is arranged at the top of the temperature control layer, and the first medium ring is sleeved on the outer side of the second medium ring and located at the top of the temperature control layer.
The circle center of the first medium ring and the circle center of the second medium ring are both positioned at the intersection point of the diagonals of the cross section of the substrate layer.
Wherein the length of the substrate layer is 110-130 μm, the width is 110-130 μm, and the thickness is 10-20 μm;
the thickness of the vanadium dioxide is 0.3-0.5 μm.
Wherein the thickness of the dielectric layer is 30-50 μm;
the outer diameter of the first medium ring is 45-50 μm, and the inner diameter is 30-35 μm;
the outer diameter of the second medium ring is 20-25 μm, and the inner diameter is 5-10 μm.
The utility model discloses an adjustable terahertz of temperature absorber is now compared with prior art based on compound all dielectric, and its beneficial effect lies in: the physical property of the temperature control layer positioned on the top of the basal layer is changed by heating the composite all-dielectric-based temperature-adjustable terahertz absorber, so that the performance of the composite all-dielectric-based temperature-adjustable terahertz absorber is changed, and the active control of the absorptivity of the composite all-dielectric-based temperature-adjustable terahertz absorber is realized.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a terahertz absorber unit according to an embodiment of the present invention.
Fig. 2 is a top view of the temperature tunable terahertz absorber based on the composite all-dielectric according to the embodiment of the present invention.
Fig. 3 is a graph of vanadium dioxide resistivity versus temperature according to an embodiment of the present invention.
Fig. 4 is an absorption spectrum diagram of the temperature tunable terahertz absorber based on the composite all-dielectric according to the embodiment of the present invention.
Fig. 5 is a graph showing the absorption curves of the dielectric layer rings of the embodiment of the present invention at different thicknesses.
Fig. 6 is an absorption spectrum diagram of the temperature-adjustable terahertz absorber based on the composite all-dielectric in the process of modulating vanadium dioxide.
The terahertz absorber comprises a 1-terahertz absorber unit, a 2-positive electrode, a 3-negative electrode, a 4-heating resistor, 11-a dielectric layer, 12-a temperature control layer, 13-a substrate layer, 112-a first dielectric ring and 113-a second dielectric ring.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary and intended to be used for explaining the present invention, and should not be construed as limiting the present invention.
Referring to fig. 1 to 6, an embodiment of the present invention provides a temperature-adjustable terahertz absorber based on a composite all-dielectric material, including a plurality of terahertz absorber units 1, a plurality of terahertz absorber units 1 are N × N distribution, and N is a natural number, and is adjacent terahertz absorber units 1 fixed connection, every terahertz absorber unit 1 includes a dielectric layer 11, a temperature control layer 12 and a substrate layer 13, the dielectric layer 11, the temperature control layer 12 and the substrate layer 13 are stacked in order from top to bottom.
The physical property of the temperature control layer 12 is changed by heating the composite all-dielectric-based temperature-adjustable terahertz absorber, so that the performance of the composite all-dielectric-based temperature-adjustable terahertz absorber is changed, and the active control of the absorptivity of the composite all-dielectric-based temperature-adjustable terahertz absorber is realized.
Referring to fig. 2, in the embodiment, the composite all-dielectric-based temperature-adjustable terahertz absorber is heated by a heating device, the heating device includes a positive electrode 2, a negative electrode 3 and a heating resistor 4, the positive electrode 2 and the negative electrode 3 are connected by the heating resistor 4, a voltage is applied to the positive electrode 2 and the negative electrode 3 of the heating device, a current passes through the heating resistor 4, and the heating resistor 4 generates a large amount of joule heat, so that the composite all-dielectric-based temperature-adjustable terahertz absorber placed on the top of the resistor is heated.
Specifically, the temperature control layer 12 is made of vanadium dioxide or indium antimonide. The vanadium dioxide generates phase change due to the change of temperature, so that the performance of the temperature-adjustable terahertz absorber based on the composite all-dielectric is changed, and the absorber is actively controlled in a temperature control mode. The indium antimonide is enhanced or reduced in metal property due to temperature change, and the suction filter can be actively controlled in a temperature control mode.
In this example, the properties of vanadium dioxide were changed by controlling the temperature of vanadium dioxide.
The dielectric constant of the vanadium dioxide is consistent with that of a Drude model, and the calculation formula is as follows:
wherein epsilon ∞ 12 is the dielectric constant of vanadium dioxide at high frequencies,
is the plasma frequency related to conductivity, ω is the angular frequency and γ is the collision frequency. In addition to this, the present invention is,
and σ is proportional to the free space carrier density. The electrical conductivity of the vanadium dioxide can be changed by changing the temperature of the vanadium dioxideChanging its dielectric constant, which can be equivalent to changing the electrical conductivity of vanadium dioxide and thus its dielectric constant, the plasma frequency at σ can be approximately written as the expression:
wherein σ 0 ＝3000Ω -1 cm -1 ，ω p (σ 0 )＝1.4×10 15 rad/s，γ＝ 5.75×10 13 rad/s, this parameter being independent of σ. The relative dielectric constant of silicon dioxide is approximately 3.8.
Specifically, the substrate layer 13 is made of silicon dioxide or silicon, each of the dielectric layers 11 includes a first dielectric ring 112 and a second dielectric ring 113, the second dielectric ring 113 is disposed on the top of the temperature control layer 12, the first dielectric ring 112 is sleeved on the outer side of the second dielectric ring 113 and is located on the top of the temperature control layer 12, the center of the first dielectric ring 112 and the center of the second dielectric ring 113 are both located at the intersection point of the cross section diagonal of the substrate layer 13, the substrate layer 13 has a length of 110 μm to 130 μm, a width of 110 μm to 130 μm, a thickness of 10 μm to 20 μm, a thickness of vanadium dioxide of 0.3 μm to 0.5 μm, a thickness of the dielectric layer 11 of 30 μm to 50 μm, an outer diameter of the first dielectric ring 112 is 45 μm to 50 μm, and an inner diameter of 30 μm to 35 μm, the outer diameter of the second medium ring is 20-25 μm, and the inner diameter is 5-10 μm.
In this embodiment, the cross section of the substrate layer 13 is square, which is beneficial for arranging a plurality of unit structures. The dielectric layer 11 and the temperature control layer 12 are both designed to be symmetrical structures, so that the temperature-adjustable terahertz absorber based on the composite all-dielectric has the characteristic of insensitive polarization direction, has the same absorption effect on waves in different directions, and is low in loss, high in stability and high in absorption due to the selection of all-dielectric materials.
Terahertz wave absorber performance is generally evaluated with absorption rate and modulation depth.
The absorption is related to the reflectance and transmission as follows:
A(ω)＝1-R(ω)-T(ω) (3)
the modulation depth formula is:
M d ＝(|A max -A min |)/(|A max +A min |) (4)
wherein R (omega), T (omega) are respectively reflectivity and transmissivity, A max 、A min Respectively, the absorption rate of the center frequency in the initial state and the absorption rate of the center frequency after modulation.
As can be seen from fig. 4, the temperature-adjustable terahertz wave absorber based on the composite all-dielectric has the lowest reflection and transmission at the 2.57THz position, the highest absorption rate, and the absorption rate of 99.80%.
As can be seen from FIG. 5, the absorption curves of the composite all-dielectric-based temperature-adjustable terahertz wave absorber when the thicknesses of the rings of the dielectric layer 11 are respectively 15 μm, 25 μm, 35 μm, 45 μm and 55 μm can reach the maximum absorption rate when the thickness is 35 μm.
As can be seen from fig. 6, in the absorption curve of the composite all-dielectric-based temperature-adjustable terahertz wave absorber under different temperatures, that is, under different vanadium dioxide conductivities, the dielectric constants under different conductivity conditions are different, and therefore the absorption curves are also different. When the conductivity is 2000 omega -1 cm -1 When the temperature-adjustable terahertz wave absorber based on the composite all-dielectric material is used, the absorption rate of the terahertz wave absorber at the 2.57THz position reaches 99.80%, when the conductivity is reduced, the absorption rate is reduced along with the reduction, and when the conductivity is 10 omega -1 cm -1 When the temperature is controlled, the absorption rate at 2.57THz is reduced to 14.80%, and the modulation depth is 74.17%.
While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention.
Claims (7)
1. A temperature-adjustable terahertz absorber based on a composite all-dielectric is characterized in that,
the terahertz absorber comprises a plurality of terahertz absorber units, wherein the terahertz absorber units are distributed in an NxN mode, N is a natural number, and the adjacent terahertz absorber units are fixedly connected;
each terahertz absorber unit comprises a medium layer, a temperature control layer and a basal layer, wherein the medium layer, the temperature control layer and the basal layer are sequentially stacked from top to bottom.
2. The composite all-dielectric based temperature tunable terahertz absorber of claim 1,
the temperature control layer is made of vanadium dioxide or indium antimonide.
3. The composite all-dielectric based temperature tunable terahertz absorber of claim 2,
the base layer is made of silicon dioxide or silicon.
4. The composite all-dielectric based temperature tunable terahertz absorber of claim 3,
each medium layer all includes first medium ring and second medium ring, the second medium ring set up in the top on temperature control layer, first medium ring establishes the cover and locates the outside of second medium ring is located the top on temperature control layer.
5. The composite all-dielectric based temperature tunable terahertz absorber of claim 4,
the circle center of the first medium ring and the circle center of the second medium ring are both positioned at the intersection point of the diagonals of the cross section of the substrate layer.
6. The composite all-dielectric based temperature tunable terahertz absorber of claim 5,
the length of the substrate layer is 110-130 μm, the width is 110-130 μm, and the thickness is 10-20 μm;
the thickness of the vanadium dioxide is 0.3-0.5 μm.
7. The composite all-dielectric based temperature tunable terahertz absorber of claim 6,
the thickness of the dielectric layer is 30-50 μm;
the outer diameter of the first medium ring is 45-50 μm, and the inner diameter is 30-35 μm;
the outer diameter of the second medium ring is 20-25 μm, and the inner diameter is 5-10 μm.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115882235A (en) * | 2023-03-09 | 2023-03-31 | 南京邮电大学 | Wave absorbing unit based on high-resistance resonant ring and broadband metamaterial wave absorber |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115882235A (en) * | 2023-03-09 | 2023-03-31 | 南京邮电大学 | Wave absorbing unit based on high-resistance resonant ring and broadband metamaterial wave absorber |
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