CN217215043U - Double-passband dielectric filter - Google Patents
Double-passband dielectric filter Download PDFInfo
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- CN217215043U CN217215043U CN202220883493.8U CN202220883493U CN217215043U CN 217215043 U CN217215043 U CN 217215043U CN 202220883493 U CN202220883493 U CN 202220883493U CN 217215043 U CN217215043 U CN 217215043U
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Abstract
The utility model discloses a dual-passband dielectric filter, which comprises a first dielectric filter body and a second dielectric filter body, wherein the first dielectric filter body comprises a first metal layer circuit structure which forms the filtering characteristic of the first dielectric filter body, and the first metal layer circuit structure is provided with two first I/O coupling ends; the second dielectric filter body comprises a second metal layer circuit structure forming the filter characteristic of the second dielectric filter body, and the second metal layer circuit structure is provided with two second I/O coupling ends; the first medium body and the second medium body are respectively provided with a first I/O port and a second I/O port, the first I/O port is simultaneously connected with one of the first I/O coupling ends and one of the second I/O coupling ends, and the second I/O port is simultaneously connected with the other first I/O coupling end and the other second I/O coupling end. The utility model discloses a dual passband dielectric filter can reduce the overall dimension of product, can improve production efficiency through reducing the equipment number of times.
Description
Technical Field
The utility model relates to a communication device technical field, concretely relates to dual passband dielectric filter.
Background
The dual-passband dielectric filter is a filter with two filter passbands, which is usually made of ceramic materials by molding and processing, as shown in fig. 1, which shows the dual-passband dielectric filter in the prior art, two filters with different frequencies are separately manufactured and then respectively welded on a PCB board, the two filters are connected together by a microstrip line on the PCB board, and a dual-passband filter with an input port and an output port is formed by the connection and matching of the microstrip line. The double-passband filter with the design has larger overall size, and is limited to be applied to equipment with limited installation space; meanwhile, the two filters are separately and independently soldered to the PCB, which may affect the production efficiency to some extent.
Disclosure of Invention
Therefore, the utility model aims to solve the technical problem that exists among the prior art, provide a dual passband dielectric filter who optimizes structural design, can reduce the overall dimension of product, can improve production efficiency through reducing the equipment number of times.
In order to solve the above technical problems, the utility model provides a dual-passband dielectric filter, which comprises a first dielectric filter body and a second dielectric filter body both having a rectangular structure,
the first dielectric filter body comprises a first metal layer circuit structure forming the filter characteristic of the first dielectric filter body, and the first metal layer circuit structure is provided with two first I/O coupling ends;
the second dielectric filter body comprises a second metal layer circuit structure forming the filter characteristic of the second dielectric filter body, and the second metal layer circuit structure is provided with two second I/O coupling ends;
the first dielectric filter body and the second dielectric filter body are respectively positioned on the upper layer and the lower layer and are arranged oppositely, two end parts of the first dielectric filter body and the second dielectric filter body are respectively connected through a first dielectric body and a second dielectric body, and a layer gap is formed between the first dielectric filter body and the second dielectric filter body and is positioned outside the connection part of the first dielectric filter body and the second dielectric filter body;
the first medium body and the second medium body are respectively provided with a first I/O port and a second I/O port, the first I/O port is simultaneously connected with one of the first I/O coupling ends and one of the second I/O coupling ends, and the second I/O port is simultaneously connected with the other first I/O coupling end and the other second I/O coupling end.
In a preferred embodiment of the present invention, the first dielectric member, the second dielectric member, the first dielectric filter body and the second dielectric filter body are integrally formed.
The utility model discloses a preferred embodiment, further include the first IO port include along the first coupling hole that first dielectric body thickness direction set up and around the port metal level of first coupling hole, the second IO port include along the second coupling hole that second dielectric body thickness direction set up and around the port metal level of second coupling hole, first coupling hole, second coupling hole parallel arrangement each other, both first IO port, second IO port the port metal level all simultaneously with first metal level circuit structure, second metal level circuit structure connect.
In a preferred embodiment of the present invention, the aperture of the first coupling hole and the aperture of the second coupling hole are related to the respective port coupling amount, and the coverage area of the port metal layer is related to the respective corresponding port coupling amount.
In a preferred embodiment of the present invention, the port metal layer is a silver layer, a copper layer, a gold layer or an aluminum alloy layer.
The present invention further provides a method for manufacturing a semiconductor device, wherein the first coupling hole and the second coupling hole are through holes or blind holes that are not through holes extending through the thickness direction of the respective dielectric bodies.
In a preferred embodiment of the present invention, the first dielectric filter body is provided with a first resonant hole penetrating along a thickness direction thereof, the second dielectric filter body is provided with a second resonant hole penetrating along a thickness direction thereof, and the first resonant hole, the second resonant hole, the first coupling hole, and the second coupling hole are arranged in parallel to each other; the first metal layer circuit structure has a circuit metal layer disposed around the first resonant hole, and the second metal layer circuit structure has a circuit metal layer disposed around the second resonant hole; the port metal layers of the first I/O port and the second I/O port are simultaneously connected with the circuit metal layers of the first metal layer circuit structure and the second metal layer circuit structure.
The present invention provides a preferred embodiment, further comprising that the center distance between the first coupling hole and the first resonance hole and the second resonance hole adjacent to the first coupling hole is related to the port coupling amount, and the center distance between the second coupling hole and the first resonance hole and the second resonance hole adjacent to the second coupling hole is related to the port coupling amount.
In a preferred embodiment of the present invention, the first resonant holes further include at least two, and the first resonant holes included in the first dielectric filter body are sequentially arranged at intervals along the width direction thereof; the second resonant holes are at least two, and the second resonant holes contained in the second dielectric filter body are sequentially arranged at intervals along the width direction of the second dielectric filter body.
In a preferred embodiment of the present invention, the first resonant hole and the second resonant hole are circular holes, square holes or elliptical holes; or the first resonant hole and the second resonant hole are straight holes or stepped holes.
Compared with the prior art, the technical scheme of the utility model have following advantage:
double-passband dielectric filter, including being located upper and lower floor just to setting up, and first dielectric filter body and the second dielectric filter body through first dielectric body and second dielectric body connection, first dielectric filter body and second dielectric filter body constitute independent band-pass filter separately respectively, these two band-pass filter are direct to be a whole by first dielectric body and second dielectric body connection, form the double-passband dielectric filter of an input port of sharing and an output port, do not need microstrip line connection, also need not extra port matching, can reduce the size of product XY direction. Meanwhile, the two band-pass filters form an integral structure, and only need to be welded once during use, so that the production efficiency is improved by reducing the welding times.
Drawings
FIG. 1 is a schematic structural diagram of a dual-passband dielectric filter in the prior art;
fig. 2 is a perspective view of a dual band-pass dielectric filter according to a preferred embodiment of the present invention;
fig. 3 is a cross-sectional view of the dual band-pass dielectric filter shown in fig. 2;
fig. 4 is a side view of the dual bandpass dielectric filter shown in fig. 2.
The numbering in the figures illustrates: 1-PCB, 11-first band-pass filter, 33-second band-pass filter, 55-microstrip line;
2-a first dielectric filter body, 21-a first I/O coupling terminal, 22-a first resonance aperture;
4-a second dielectric filter body, 41-a second I/O coupling terminal, 42-a second resonance aperture;
6-first dielectric body, 61-first I/O terminal, 62-first coupling hole;
8-second dielectric body, 81-second I/O terminal, 82-second coupling hole;
10-layer gap, 12-port metal layer, 14-circuit metal layer.
Detailed Description
The present invention is further described with reference to the following drawings and specific embodiments so that those skilled in the art can better understand the present invention and can implement the present invention, but the embodiments are not to be construed as limiting the present invention.
When the electromagnetic wave is transmitted in the high dielectric constant substance, the wavelength can be shortened, by utilizing the theory, the traditional metal material can be replaced by the dielectric material, and the volume of the filter can be reduced under the same index. Among them, ceramics are commonly used dielectric materials, and the dielectric constant can be changed according to different formulations, such as 21, 36, 90, etc.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a common dual-bandpass dielectric filter in the prior art, where the dual-bandpass dielectric filter shown in fig. 1 includes two separate bandpass filters, the two bandpass filters are respectively welded on a PCB, and are connected by a microstrip line on the PCB to share an input port and an output port, and an inductor and a capacitor may be welded on the microstrip line as needed to perform port matching. The double-passband dielectric filter with the structural design has larger overall size in the XY direction, and is limited to be applied to some equipment with limited installation space; meanwhile, the two filters are separately and independently soldered to the PCB, which may affect the production efficiency to some extent.
The embodiment of the utility model discloses dual passband dielectric filter can reduce the overall dimension of product, can improve production efficiency through reducing the equipment number of times.
The embodiments of the present invention will be further explained with reference to the drawings.
Referring to fig. 2 to 4, a dual-passband dielectric filter according to a preferred embodiment of the present invention includes a first dielectric filter body 2 and a second dielectric filter body 4 both having a rectangular parallelepiped structure, where the first dielectric filter body 2 includes a first metal layer circuit structure constituting a filter characteristic thereof, and the first metal layer circuit structure has two first I/O coupling terminals 21; the second dielectric filter body 4 includes a second metal layer circuit structure constituting a filter characteristic thereof, the second metal layer circuit structure having two second I/O coupling terminals 41; the first dielectric filter body 2 and the second dielectric filter body 4 are respectively positioned at the upper layer and the lower layer and are oppositely arranged, two end parts of the first dielectric filter body 2 and the second dielectric filter body 4 are respectively connected through a first dielectric body 6 and a second dielectric body 8, and a layer gap 10 is arranged between the first dielectric filter body 2 and the second dielectric filter body 4 and is positioned at the joint of the first dielectric filter body and the second dielectric filter body; the first dielectric body 6 and the second dielectric body 8 are respectively provided with a first I/O port 61 and a second I/O port 81, the first I/O port 61 is simultaneously connected with one of the first I/O coupling ends 21 and one of the second I/O coupling ends 41, and the second I/O port 81 is simultaneously connected with the other first I/O coupling end 21 and the other second I/O coupling end 41.
Double-passband dielectric filter, including being located the upper and lower floor just to setting up, and first dielectric filter body 2 and the second dielectric filter body 4 connected through first dielectric body 6 and second dielectric body 8, first dielectric filter body 2 and second dielectric filter body 4 constitute independent band-pass filter separately respectively, these two band-pass filter are direct to be connected by first dielectric body 6 and second dielectric body 8 and are a whole, form the double-passband dielectric filter of an input port of sharing and an output port, do not need microstrip line connection, also need not extra port matching, can reduce the size of product XY direction. Meanwhile, the two band-pass filters form an integral structure, and only need to be welded once during use, so that the production efficiency is improved by reducing the welding times.
The first dielectric body 6, the second dielectric body 8, the first dielectric filter body 2 and the second dielectric filter body 4 are formed into an integral structure. Specifically, in the embodiment of the utility model provides an in, based on compression molding technology, make the idiosome of dual passband dielectric filter structure after dry pressing, sintering with ceramic powder raw materials in proper order, this idiosome contains the whole structures that form first dielectric body 6, second dielectric body 8, first dielectric filter body 2 and second dielectric filter body 4, makes dual passband dielectric filter formula structure as an organic whole.
Specifically, the first dielectric filter body 2 is provided with a first resonance hole 22 penetrating in the thickness direction thereof, and the second dielectric filter body 4 is provided with a second resonance hole 42 penetrating in the thickness direction thereof. The number of the first resonant holes 22 is at least two, and the first resonant holes 22 included in the first dielectric filter body 2 are sequentially arranged at intervals along the width direction thereof; the second resonance holes 42 include at least two, and the second resonance holes 42 included in the second dielectric filter body 4 are arranged at intervals in the width direction thereof. It is to be understood that when there are more first resonance holes 22 and second resonance holes 42, they are respectively provided in the respective dielectric filter bodies so as to be spaced in a row in the width direction. One of the dual-band dielectric filters shown in fig. 2 includes fourteen resonant holes, and seven resonant holes are provided in the first dielectric filter body 2 and the second dielectric filter body 4, respectively. In the dielectric filter shown in fig. 2, five centers of seven first resonant holes included in the first dielectric filter body 2 are connected to a straight line, and the other two centers of the seven first resonant holes are not connected to the straight line. The number of the resonant holes contained in each dielectric filter body is determined according to the filtering order required in practice, and the arrangement mode of the resonant holes is determined according to the coupling quantity required in practice. The second dielectric filter body 4 is identical to the first dielectric filter body 2 and will not be described herein.
The first resonance hole 22 and the second resonance hole 42 are circular holes, square holes, or elliptical holes, and the specific shapes thereof are determined according to the frequency, bandwidth, coupling amount, and the like required by the dielectric filter. On the other hand, the first resonance hole 22 and the second resonance hole 42 are through holes or stepped holes, and the specific shape thereof is determined according to the frequency, bandwidth, coupling amount, and the like required for the dielectric filter.
The first metal layer circuit structure has a circuit metal layer 14 disposed around the first resonant hole 22, and the second metal layer circuit structure has a circuit metal layer 14 disposed around the second resonant hole 42. Specifically, after the blank is formed, a metal outer conductor layer is plated or printed or infiltrated on four surfaces of the blank parallel to the resonance holes and one surface perpendicular to the resonance holes, a circuit metal layer 14 is obtained by laser after another surface of the blank perpendicular to the resonance holes is printed or infiltrated, a metal inner conductor layer is plated or infiltrated on the inner surface of each resonance hole, and the metal inner conductor layer is connected with the metal outer conductor layer on the surface perpendicular to the resonance holes.
Specifically, the first I/O port 61 includes a first coupling hole 62 disposed along a thickness direction of the first dielectric body 6 and a port metal layer 12 surrounding the first coupling hole 62, the second I/O port 81 includes a second coupling hole 82 disposed along a thickness direction of the second dielectric body 8 and a port metal layer 12 surrounding the second coupling hole 82, the first resonant hole 22, the second resonant hole 42, the first coupling hole 62 and the second coupling hole 82 are disposed in parallel, and the port metal layers 12 of the first I/O port 61 and the second I/O port 81 are both connected to the first metal layer circuit structure and the second metal layer circuit structure at the same time. Specifically, the port metal layers 12 of the first I/O port 61 and the second I/O port 81 are both connected to the circuit metal layers 14 of the first metal layer circuit structure and the second metal layer circuit structure at the same time. The circuit metal layer 14 and the port metal layer 12 are obtained through metallization processing, and the metallization of the circuit metal layer 14 and the port metal layer 12 is removed in a local area during debugging so as to correspondingly adjust the frequency and the respective coupling amount.
The first coupling hole 62 and the second coupling hole 82 are through holes or blind holes that penetrate through the dielectric bodies in the thickness direction. The specific type of the filter is determined according to the frequency, bandwidth, coupling amount and the like required by the dielectric filter.
The port metal layer 12 is a silver layer, a copper layer, a gold layer or an aluminum alloy layer, and the circuit metal layer 14 is a silver layer, a copper layer, a gold layer or an aluminum alloy layer. Among them, silver layers are used more, which have good conductivity and cost performance. The port metal layer 12 and the circuit metal layer 14 are made of the same material in the same dual-band-pass dielectric filter.
It should be noted that the aperture of each of the first coupling hole and the second coupling hole is related to the respective port coupling amount, the coverage area of the port metal layer is related to the respective corresponding port coupling amount, the center distance between the first coupling hole and the first resonant hole and the second resonant hole adjacent to the first coupling hole is related to the port coupling amount, and the center distance between the second coupling hole and the first resonant hole and the second resonant hole adjacent to the second coupling hole is related to the port coupling amount. The coupling amount is adjusted by adjusting the aperture of the first coupling hole and the aperture of the second coupling hole, the coverage area of the port metal layer, the center distance between the first coupling hole and the first resonance hole and the second resonance hole which are adjacent to the first coupling hole, and the center distance between the second coupling hole and the first resonance hole and the second resonance hole which are adjacent to the second coupling hole, so that the compatible matching between the two filters is realized.
The above-mentioned embodiments are merely preferred embodiments for fully illustrating the present invention, and the scope of the present invention is not limited thereto. Equivalent substitutes or changes made by the technical personnel in the technical field on the basis of the utility model are all within the protection scope of the utility model. The protection scope of the present invention is subject to the claims.
Claims (10)
1. A dual passband dielectric filter, comprising: comprises a first dielectric filter body and a second dielectric filter body which are both in a cuboid structure,
the first dielectric filter body comprises a first metal layer circuit structure forming the filter characteristic of the first dielectric filter body, and the first metal layer circuit structure is provided with two first I/O coupling ends;
the second dielectric filter body comprises a second metal layer circuit structure forming the filter characteristic of the second dielectric filter body, and the second metal layer circuit structure is provided with two second I/O coupling ends;
the first dielectric filter body and the second dielectric filter body are respectively positioned on the upper layer and the lower layer and are arranged oppositely, two end parts of the first dielectric filter body and the second dielectric filter body are respectively connected through a first dielectric body and a second dielectric body, and a layer gap is formed between the first dielectric filter body and the second dielectric filter body and is positioned outside the connection part of the first dielectric filter body and the second dielectric filter body;
the first medium body and the second medium body are respectively provided with a first I/O port and a second I/O port, the first I/O port is simultaneously connected with one of the first I/O coupling ends and one of the second I/O coupling ends, and the second I/O port is simultaneously connected with the other first I/O coupling end and the other second I/O coupling end.
2. A dual bandpass dielectric filter as recited in claim 1, wherein: the first dielectric body, the second dielectric body, the first dielectric filter body and the second dielectric filter body are formed into an integral structure.
3. A dual bandpass dielectric filter as recited in claim 1, wherein: the first I/O port comprises a first coupling hole and a port metal layer, the first coupling hole is formed in the thickness direction of the first dielectric body, the port metal layer surrounds the first coupling hole, the second I/O port comprises a second coupling hole and a port metal layer, the second coupling hole is formed in the thickness direction of the second dielectric body, the port metal layer surrounds the second coupling hole, the first coupling hole and the second coupling hole are arranged in parallel, and the port metal layers of the first I/O port and the second I/O port are connected with the first metal layer circuit structure and the second metal layer circuit structure simultaneously.
4. A dual bandpass dielectric filter as recited in claim 3, wherein: the aperture of the first coupling hole and the aperture of the second coupling hole are related to the respective port coupling amount, and the coverage area of the port metal layer is related to the respective corresponding port coupling amount.
5. A dual bandpass dielectric filter as recited in claim 3, wherein: the port metal layer is a silver layer, a copper layer, a gold layer or an aluminum alloy layer.
6. A dual bandpass dielectric filter as recited in claim 3, wherein: the first coupling hole and the second coupling hole are through holes or blind holes which are not through and penetrate through the thickness direction of the respective dielectric bodies.
7. A dual bandpass dielectric filter as recited in claim 3, wherein: the first dielectric filter body is provided with a first resonance hole penetrating along the thickness direction of the first dielectric filter body, the second dielectric filter body is provided with a second resonance hole penetrating along the thickness direction of the second dielectric filter body, and the first resonance hole, the second resonance hole, the first coupling hole and the second coupling hole are arranged in parallel; the first metal layer circuit structure having a circuit metal layer disposed around the first resonant hole, the second metal layer circuit structure having a circuit metal layer disposed around the second resonant hole; the port metal layers of the first I/O port and the second I/O port are simultaneously connected with the circuit metal layers of the first metal layer circuit structure and the second metal layer circuit structure.
8. A dual bandpass dielectric filter as recited in claim 7, wherein: the center distance between the first coupling hole and the first resonance hole and the second resonance hole adjacent to the first coupling hole is related to the port coupling amount, and the center distance between the second coupling hole and the first resonance hole and the second resonance hole adjacent to the second coupling hole is related to the port coupling amount.
9. A dual bandpass dielectric filter as recited in claim 7, wherein: the first resonant holes are arranged at intervals along the width direction of the first dielectric filter body; the second resonant holes are at least two, and the second resonant holes contained in the second dielectric filter body are sequentially arranged at intervals along the width direction of the second dielectric filter body.
10. A dual bandpass dielectric filter as recited in claim 7, wherein: the first resonance hole and the second resonance hole are round holes, square holes or elliptical holes;
or the first resonant hole and the second resonant hole are straight holes or stepped holes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220883493.8U CN217215043U (en) | 2022-04-15 | 2022-04-15 | Double-passband dielectric filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220883493.8U CN217215043U (en) | 2022-04-15 | 2022-04-15 | Double-passband dielectric filter |
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| Publication Number | Publication Date |
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| CN217215043U true CN217215043U (en) | 2022-08-16 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202220883493.8U Active CN217215043U (en) | 2022-04-15 | 2022-04-15 | Double-passband dielectric filter |
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| CN (1) | CN217215043U (en) |
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2022
- 2022-04-15 CN CN202220883493.8U patent/CN217215043U/en active Active
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