CN217194734U - Liquid supply device, trimming device and polishing unit for chemical mechanical polishing - Google Patents

Abstract

The utility model discloses a liquid supply device, a trimming device and a polishing unit for chemical mechanical polishing, wherein the liquid supply device comprises a liquid supply base and a liquid supply arm, one end of the liquid supply arm is rotationally connected with the liquid supply base, and the other end of the liquid supply arm is provided with a liquid supply pipe facing to the lower side; the upper portion of the liquid supply arm is configured with a guard having an overflow structure to form a film of liquid over at least a portion of a top surface of the guard.

Description

Liquid supply device, trimming device and polishing unit for chemical mechanical polishing

Technical Field

The utility model belongs to the technical field of the chemical mechanical polishing, particularly, relate to a supply liquid device, trimming device and polishing unit for chemical mechanical polishing.

Background

Chemical Mechanical Polishing (CMP) is an ultra-precise surface processing technique for global planarization. Chemical mechanical polishing generally attracts a wafer to a bottom surface of a carrier head, the surface of the wafer having a deposition layer is pressed against an upper surface of a polishing pad, and the carrier head rotates in the same direction as the polishing pad under the actuation of a driving assembly and gives a downward load to the wafer; meanwhile, the polishing solution is supplied to the upper surface of the polishing pad and distributed between the wafer and the polishing pad, so that the chemical mechanical polishing of the wafer is completed under the combined action of chemistry and machinery.

During polishing, components such as a dressing device for dressing a polishing pad, a supply device for supplying polishing liquid, and a carrier head need to be periodically moisturized or rinsed to prevent splashes formed by polishing operations from adhering to the outer surface of a polishing component and crystallizing, and the crystals easily fall onto the surface of the polishing pad to scratch the polishing pad or wafer.

To prevent the polishing pad or wafer from being scratched by the falling crystals, the prior art generally provides a polishing unit with a regular moisturizing or rinsing device, which can prevent the cleaning liquid from splashing onto the polishing pad to improve the polishing quality. Namely, a spray rod or a row of nozzles are arranged above the protective cover to spray water or spray water from top to bottom, so as to fully moisturize the polishing parts. However, the above technical solutions also have some disadvantages: firstly, a spray rod and/or a nozzle assembly is additionally arranged in the polishing unit, the spray rod and/or the nozzle assembly cannot keep moisture, and crystals are easily formed on the surfaces of the spray rod and/or the nozzle assembly; secondly, the sizes of water outlet holes of the spray rod and the nozzle assembly are small, so that the normal moisturizing effect is influenced due to easy blockage; the verticality of the water outlet hole, the position precision of the water outlet hole and the installation precision of the spray rod and the nozzle assembly are high in requirement, and the conventional processing method cannot meet the processing requirement; in addition, the spray bar and the nozzle assembly have a certain length, and fluid needs to flow through all the water outlet holes or nozzles from the water inlet, and the fluid passes through all the positions of the spray bar in sequence, so that the water outlet holes or the nozzles have uneven water outlet, the water outlet amount from the near end of the water inlet is large, the water outlet amount from the far end of the water inlet is small, and the uniform coverage of the moisturizing surface is further influenced.

In addition, with the downward shift of the process, 7nm, 5nm and even 3nm process technologies appear, which puts higher requirements on the polishing environment; the amount of particles attached to the surfaces of the parts of the polishing unit needs to be strictly controlled so as to avoid the wafer scratching defect caused by particle crystallization.

SUMMERY OF THE UTILITY MODEL

The utility model discloses aim at solving one of the technical problem that exists among the prior art to at least a certain extent.

To this end, a first aspect of the embodiments of the present invention provides a liquid supply device for chemical mechanical polishing, which includes a liquid supply base and a liquid supply arm, wherein one end of the liquid supply arm is rotatably connected to the liquid supply base, and the other end of the liquid supply arm is configured with a liquid supply pipe facing downward; the upper portion of the liquid supply arm is configured with a guard having an overflow structure to form a film of liquid over at least a portion of a top surface of the guard.

In some embodiments, the overflow structure is disposed toward the top of the shielding member, and a liquid film formed by the overflow structure covers at least a part of the top surface of the shielding member from high to low.

In some embodiments, the overflow structure includes an overflow groove disposed along a length direction of the shielding member and an extension groove communicating with the overflow groove and located at an end of the shielding member.

In some embodiments, the extension groove is disposed along an end profile of the guard, and a depth of the extension groove is less than or equal to a depth of the overflow groove.

In some embodiments, the overflow structure further comprises a liquid inlet hole and a fluid duct, the liquid inlet hole being disposed at an end of the guard and communicating with the fluid duct; the overflow trough is located above the fluid aperture.

In some embodiments, the longitudinal cross-section of the isopipe is a trapezoid with a wide top and a narrow bottom, the sides of the isopipe are inclined towards the outside, and the adjacent sides form an angle of inclination of 10-60 °.

In some embodiments, the overflow structure includes an overflow hole, a liquid inlet hole and a fluid channel, the liquid inlet hole disposed at the end of the protection member is communicated with the fluid channel, and the overflow hole extends outward from the inner side wall of the fluid channel to the top surface of the protection member.

In addition, the utility model also discloses a dressing device for chemical mechanical polishing, which comprises a dressing base and a dressing arm, wherein one end of the dressing arm is rotationally connected with the dressing base, and the other end of the dressing arm is provided with a dressing part; the upper part of the trimming arm is provided with a guard having an overflow structure to form a liquid film on at least a partial area of the top surface of the guard.

In a preferred embodiment, the overflow structure is arranged towards the top of the protection part, and the formed liquid film covers the top surface of the protection part from high to low; the overflow structure comprises an overflow groove and an extension groove, the overflow groove is arranged along the length direction of the protection piece, and the extension groove is communicated with the overflow groove and is positioned at the end part of the protection piece.

In addition, the second aspect of the embodiments of the present invention further provides a chemical mechanical polishing unit, which includes a polishing disk and a carrier head, and further includes the above-mentioned liquid supply device and/or the above-mentioned dressing device.

The beneficial effects of the utility model include: the overflow structures are arranged on the protection parts on the upper sides of the liquid supply device and the trimming device, no new cleaning and moisturizing part is needed, the cleaning and moisturizing of the liquid supply device and the trimming device are effectively guaranteed, and meanwhile, the operation space is saved; cleaning and moisturizing are performed by adopting an overflow principle, so that the problem of fluid jet back splash in the traditional mode is avoided, and the protection effects of the liquid supply device and the finishing device are effectively improved; in addition, the overflow groove of the protection piece has larger size, effectively reduces the processing precision and the installation precision of the protection piece, and is beneficial to controlling the manufacturing cost of the chemical mechanical polishing equipment.

Drawings

The advantages of the invention will become clearer and more easily understood from the detailed description given with reference to the following drawings, which are given by way of illustration only and do not limit the scope of protection of the invention, wherein:

FIG. 1 is a schematic view of a liquid supply apparatus for chemical mechanical polishing according to an embodiment of the present invention;

fig. 2 is a schematic structural diagram of a protection component according to an embodiment of the present invention;

fig. 3 is a longitudinal sectional view of a protective member according to an embodiment of the present invention;

fig. 4 is a schematic view of a protection device with a trapezoidal longitudinal cross section according to an embodiment of the present invention;

fig. 5 is a schematic view of a guard provided with an extension slot at the end thereof according to an embodiment of the present invention;

FIG. 6 is a schematic view of the structure at A in FIG. 5;

FIG. 7 is a schematic view of the structure at B in FIG. 5;

fig. 8 is a schematic view of a guard configured with overflow holes according to an embodiment of the present invention;

FIG. 9 is a longitudinal cross-sectional view of the guard illustrated in FIG. 8;

fig. 10 is a schematic view of a guard configured with overflow holes according to an embodiment of the present invention;

fig. 11 is a schematic view of a guard configured with overflow holes according to yet another embodiment of the present invention;

fig. 12 is a longitudinal cross-sectional view of a shield configured with an overflow trough and overflow holes in accordance with an embodiment of the present invention;

FIG. 13 is a schematic view of a conditioning apparatus for chemical mechanical polishing provided by an embodiment of the present invention;

fig. 14 is a schematic view of a chemical mechanical polishing unit according to an embodiment of the present invention.

Detailed Description

The technical solution of the present invention will be described in detail with reference to the following embodiments and accompanying drawings. The embodiments described herein are specific embodiments of the present invention and are provided to illustrate the concepts of the present invention; the description is intended to be illustrative and exemplary and should not be taken to limit the scope of the invention. In addition to the embodiments described herein, those skilled in the art will be able to employ other technical solutions which are obvious based on the disclosure of the claims and the specification thereof, and these technical solutions include technical solutions which make any obvious replacement or modification of the embodiments described herein.

The drawings in the present specification are schematic views to assist in explaining the concept of the present invention, and schematically show the shapes of the respective portions and the mutual relationships thereof. It should be understood that the drawings are not necessarily to scale, the same reference numerals being used to identify the same elements in the drawings in order to clearly illustrate the structure of the various elements of the embodiments of the invention.

In the present invention, "Chemical Mechanical Polishing (CMP)" is also referred to as "Chemical Mechanical Planarization (CMP)", and wafers (Wafer, W) are also referred to as substrates (Substrate), and their meanings and practical effects are equivalent.

FIG. 1 is a schematic view of a liquid supply apparatus 100 for chemical mechanical polishing according to the present invention, the liquid supply apparatus 100 includes a liquid supply base 110 and a liquid supply arm 120, one end of the liquid supply arm 120 is rotatably connected to the liquid supply base 110, and the other end thereof is provided with a liquid supply pipe (not shown) facing downward. Generally, the liquid supply base 110 is disposed outside the polishing pad, and when the supply of the polishing liquid is needed, the liquid supply arm 120 rotates around the liquid supply base 110, so that the liquid supply pipe is located at a set position above the polishing pad on the polishing pad, thereby realizing the supply of the polishing liquid.

In fig. 1, the liquid supply apparatus 100 further includes a shielding member 10, and the shielding member 10 is disposed on the liquid supply arm 120, and can prevent the polishing liquid during the polishing process from directly splashing to the components of the liquid supply apparatus 100 to affect the normal supply of the polishing liquid.

In order to prevent the liquid, particles and their mixture from crystallizing on the surface of the protection member 10 during polishing, a conventional solution is to provide the liquid supply device 100 with a cleaning liquid injection device, but the cleaning liquid injection device may not retain moisture by itself and easily forms crystals on the surface of the cleaning liquid injection device, and in addition, the cleaning liquid injection device may be a spray bar and a nozzle assembly, and the size of the water outlet holes on the spray bar and the nozzle assembly is small, so that the normal moisture retention effect is easily affected by blockage.

To solve the problems of the prior art to some extent, the protection device 10 of the present invention is further configured with an overflow structure 20 shown in fig. 1, wherein the overflow structure 20 can form a liquid film on at least a partial region of the top surface of the protection device 10, so as to achieve the moisture-preserving cleaning of the liquid supply device 100 and solve the problem that the crystal drops to scratch the wafer.

Fig. 2 shows a schematic view of a guard 10 according to the present invention. The shield 10 is disposed over the fluid supply arm 120 of the fluid supply professional 100 to prevent particles, such as polishing fluid, from adhering to the surface of the fluid supply arm 120 and forming crystals.

The protecting member 10 is provided with an overflow structure 20, and a fluid introduced into the overflow structure 20 can form a liquid film on the top surface of the protecting member 10 to clean and moisturize the top surface of the protecting member 10 and prevent splash formed during polishing from attaching to the top surface of the protecting member 10. Such as a mixture of slurry and particles, may adhere to the surfaces of the components in the polishing unit during polishing. In the present invention, the top surface of the protection member 10 is a surface other than the inner surface of the protection member 10, and includes a surface of the top of the protection member 10 and a surface of the side of the protection member 10.

Further, the overflow structure 20 is disposed toward the top of the protection member 10, and a liquid film formed by the overflow structure 20 covers the top surface of the protection member 10 from high to low, so as to clean and moisturize the top surface of the protection member 10 and prevent the adhesion of polishing splashes. The utility model discloses in, the polishing spatters the thing and indicates the polishing in-process, and the mixture of thing and other particulate matters is got rid of in polishing unit's relative enclosure space to polishing solution, polishing.

In the embodiment shown in fig. 2, overflow arrangement 20 includes an overflow trough 20a disposed along the length of shield 10. The fluid introduced into the overflow groove 20a fills the overflow groove 20a from the bottom up and overflows outside along the top of the guard 10 to clean polishing work splashes on the guard 10 and form a liquid film on the top surface of the guard 10. The liquid film formed on the top surface of the guard may ensure a certain humidity of the guard 10 to reduce adhesion between polishing splashes and the surface of the guard 10, and prevent or avoid the polishing splashes from adhering to the surface of the guard 10.

In fig. 2, the overflow structure 20 further includes a liquid inlet hole 30 and a fluid port 40 shown in fig. 3, wherein the liquid inlet hole 30 is communicated with the fluid port 40, the fluid port 40 is disposed along the length direction of the protection member 10, and an overflow groove 20a communicated with the fluid port 40 is formed at an upper portion of the fluid port 40.

Further, the liquid inlet hole 30 is disposed at an end of the shielding member 10, and the fluid enters the fluid duct 40 through the liquid inlet hole 30 and slowly overflows through the overflow groove 20 a. Specifically, a pipeline communicating with the liquid inlet hole 30 delivers the fluid to the fluid duct 40, and the fluid in the fluid duct 40 gradually rises from the bottom to the top to slowly fill the overflow groove 20 a; if the supply of fluid to the guard plate 10 is continued, the fluid will run along the top of the guard plate 10 to both sides to clean the top surface of the guard while achieving effective moisturization of the top surface of the guard.

In fig. 3, the overflow channel 20a has a rectangular longitudinal cross-section, and the center line of the longitudinal cross-sections of the overflow channel 20a and the fluid port 40 is perpendicular to the plane of the shielding member 10. That is, the overflow groove 20a is provided at the upper side of the fluid hole 40 and at the middle position of the prevention member 10.

As a variation of this embodiment, the longitudinal section of the overflow groove 20a may also be a trapezoid with a wide top and a narrow bottom, as shown in fig. 4, and the fluid entering the overflow groove 20a slowly fills the overflow groove 20a to clean and moisturize the top surface of the protection member 10. It is understood that the longitudinal cross-section of the overflow channel 20a may have other configurations, as long as the cross-sectional shape is substantially symmetrical with respect to the line connecting the overflow channel 20a and the center of the fluid channel 40, so as to ensure that the liquid flowing out through the overflow channel 20a is substantially uniformly distributed on both sides of the protecting member 10, thereby achieving the cleaning and moisturizing of the top surface of the protecting member.

In the embodiment shown in FIG. 4, the sides of the isopipe 20a are inclined outward, and the adjacent sides form an angle of inclination β of 10-60. Preferably, the inclination angle β between the sides of the overflow channel 20a is 25-45 ° to ensure that the fluid height of the overflow channel 20a increases slowly to avoid too fast an increase in fluid height to form a complete liquid film.

In fig. 2, an intake opening 30 is provided at the rear end of the protection member 10 to facilitate the installation of the fluid line. In the present invention, the rear end of the protection member 10 is referred to as a rear end, and the end of the protection member 10 close to the outer side of the polishing pad is referred to as a front end, and the end of the protection member 10 close to the center of the polishing pad is referred to as a front end. The fluid line is provided at the rear end of the protection member 10, which is advantageous in reducing the space occupation of the upper side of the polishing pad and increasing the operation space of the polishing unit.

Further, the liquid inlet hole 30 is communicated with the fluid duct 40, and the upper edge of the hole wall of the liquid inlet hole 30 is lower than the top surface of the overflow groove 20a, so that the fluid duct 40 and the overflow groove 20a are sequentially filled with the fluid from bottom to top. As a variation of this embodiment, the upper edge of the wall of the inlet opening 30 may be flush with the top surface of the overflow trough 20a, so that the overflow trough 20a is filled with fluid from the bottom to the top. In the embodiment shown in fig. 2, the liquid inlet opening 30 is arranged coaxially with the fluid port 40; it is understood that the liquid inlet 30 may be inclined with respect to the fluid port 40, as long as the liquid inlet 30 is in communication with the fluid port 40.

In the chemical mechanical polishing, the rear end of the liquid supply device 100 is located outside the polishing pad, and the front end of the liquid supply device 100 is generally located above the polishing pad, so that polishing splashes may be attached to different degrees to the lengthwise corresponding region of the shield 10 disposed above the liquid supply device 100. Generally, the closer to the center of the polishing pad, the greater the probability of particulate matter adhering thereto. Thus, the overflow structure 20 on the guard 10 may be provided with a slope, i.e. the overflow structure 20 is slightly inclined downwards towards the front end of the guard 10. Specifically, the depth of overflow structure 20 near the rear end of guard 10 is smaller, and the depth of overflow structure 20 gradually increases along the length of guard 10 until fluid passage 40 is completely communicated. With such an arrangement, a complete liquid film can be formed at the front end region of the protection element 10, thereby ensuring a good cleaning and moisturizing effect, and simultaneously saving water and controlling the wafer manufacturing cost.

It will be appreciated that the slope of overflow structure 20 may vary along the length of guard 10 to form a complete liquid film in a particular area to ensure a cleansing and moisturizing effect in a particular area.

The guard 10 shown in fig. 3 is configured with an overflow well 20a, and the fluid entering the fluid port 40 and the overflow well 20a through the fluid inlet hole 30 flows along the top of the guard 10 toward both sides under the gravity force to clean the surface of the guard and ensure a certain degree of humidity on the surface of the guard to prevent the polishing operation splash from attaching to the surface of the guard.

Since the overflow groove 20a is provided along the length direction of the protection member 10, the overflow groove 20a cannot ensure the cleaning and moisturizing effect of the end portion of the protection member 10, particularly the front end of the protection member, which is located near the center of the polishing pad; if particles are formed at the front end of the protection member 10 and crystallized, the crystals are easily dropped to scratch the polishing pad and/or the wafer, which affects the processing quality of wafer polishing.

In order to solve the above-mentioned problems, an extension groove 50 is provided on the top surface of the end of the protection member 10, and as shown in fig. 5, the extension groove 50 communicates with the overflow groove 20 a. With this arrangement, the fluid in the overflow groove 20a is expanded in the width direction of the protection member 10 by the extension groove 50, so that the fluid in the overflow groove 20a can slowly overflow not only in the length direction of the protection member 10, but also in the end face of the protection member 10, so as to clean and moisturize the end of the protection member.

Fig. 6 is a partial enlarged view at a in fig. 5, showing a partial schematic view of the rear end top face of the protection 10; fig. 7 is a partial enlarged view at B in fig. 5, showing a partial schematic view of the top face of the front end of the protection member.

In fig. 5, the extension groove 50 is provided along the end surface profile of the prevention piece 10, and has a depth smaller than that of the overflow groove 20 a. A transition section 21 shown in fig. 6 and 7 is provided between the end of the overflow groove 20a and the extension groove 50, and the fluid of the overflow groove 20a rises to the transition section 21 and then slowly rises to the upper portion of the transition section 21 until the top surface of the shielding member 10 is slowly covered. The slow flow of fluid from the overflow channel 20a and the extension channel 50 effectively cleans the top surface of the guard 10 to prevent the polishing process spatter from adhering to the surface of the guard.

As a variation of the embodiment shown in fig. 5, the extension groove 50 may have a depth equal to that of the overflow groove 20a, and the overflow groove 20a and the extension groove 50, which are communicated with the fluid duct 40, are gradually filled with the fluid entering the fluid duct 40 through the fluid inlet hole 30, so that the top surface of the protection member 10 can be cleaned and moisturized.

Compare with current injection mode, the utility model provides an overflow scheme has following advantage at least: (1) no parts are required to be additionally arranged in the polishing unit, so that the occupation of the internal space of the polishing unit is reduced; (2) a liquid film with a relatively thin thickness is formed on the top surface of the protection part through the overflow structure, and the liquid film accurately covers the top surface of the protection part; in the spray cleaning and moisturizing scheme, in order to ensure that the sprayed fluid completely covers the parts in the polishing unit, the use amount of the fluid is increased by spraying part of the fluid in the area outside the parts.

Fig. 8 is a schematic view of another embodiment of the protection device 10 according to the present invention, wherein the overflow structure 20 of the protection device 10 further includes an overflow hole 20b, the overflow hole 20b is communicated with the fluid duct 40, and as shown in fig. 9, an axis of the overflow hole 20b is perpendicular to a length direction of the fluid duct 40. The fluid in the fluid channel 40 reaches the top surface of the guard 10 via the overflow aperture 20b and flows from high to low under the force of gravity to clean the surface of the moisturizing guard 10.

Further, the number of the overflow holes 20b is plural, and they are spaced along the length direction of the protection member 10, so that the fluid in the fluid hole passage 40 is distributed on the top surface of the protection member as uniformly as possible.

As a variation of the embodiment shown in fig. 8, the interior of the guard 10 may be provided with two rows of overflow apertures 20b symmetrically about the axis of the fluid duct 40, as shown in fig. 10. The overflow hole 20b is a through hole extending obliquely outward from the inner sidewall of the fluid passage 40 to the top surface of the guard 10 so that the fluid overflows to the top surface of the guard 10 through the overflow hole 20 b.

In order to ensure the cleanness and moisture preservation of the area between the two rows of overflow holes 20b, the included angle theta between the two rows of overflow holes 20b is 5-20 degrees. Preferably, the angle θ between the two rows of overflow holes 20b is 15 ° so that the fluid discharged through the overflow holes 20b covers the entire top surface of the guard 10.

Fig. 11 is another variation of the embodiment shown in fig. 8, with the overflow holes 20b being in a row, which is disposed in a middle position of the protection member 10 and arranged along the length of the protection member 10. The fluid overflowing through the overflow hole 20b slowly covers the top surface of the guard 10, achieving cleaning and moisturizing of the guard.

In the embodiment shown in fig. 8-11, the distance between adjacent overflow holes 20b along the length of the guard 10 is 5-30mm to ensure that the top surface of the guard 10 forms a complete liquid film to clean and moisturize the guard 10. In the embodiment shown in fig. 8, the overflow aperture 20b is circular, as shown in fig. 9, with an inner diameter of 2-10 mm. It will be appreciated that the overflow aperture 20b may be of other shapes.

In the embodiment shown in fig. 8, in order to ensure the cleanness and moisture retention of the end of the protection device 10, it is necessary to provide overflow holes 20b at the front end and the rear end of the protection device 10, one end of the overflow hole 20b is communicated with the fluid duct 40, and the other end of the overflow hole 20b extends to the upper side of the end surface of the protection device 10. The water flow overflowing from the overflow hole 20b gradually covers the end surface of the protection member 10 under the action of gravity, so as to realize the cleaning and moisturizing of the end surface of the protection member.

It will be appreciated that the shielding member 10 may also be provided with both the overflow well 20a shown in fig. 5 and the overflow hole 20b shown in fig. 8, as shown in fig. 12. The overflow groove 20a is used in combination with the overflow hole 20b to ensure that the top surface of the prevention piece 10 covers the complete liquid film, achieving the cleaning and moisturizing of the prevention piece 10.

Fig. 12 is a longitudinal sectional view of the prevention guard 10 through overflow holes 20b, the overflow grooves 20a being provided in the lengthwise direction of the prevention guard 10 and being located at an intermediate position of the prevention guard 10, the number of the overflow holes 20b being two rows, and a plurality of the overflow holes 20b being provided in the lengthwise direction of the prevention guard 10 at intervals from each other. It will be appreciated that the overflow holes 20b may be arranged in four rows, six rows, or other numbers to efficiently form a film of cleaning and moisturizing liquid on the top surface of the guard 10.

The present invention provides a schematic view of a dressing apparatus 200 for chemical mechanical polishing, as shown in fig. 13. The dressing apparatus 200 includes a dressing base 210 and a dressing arm 220, and one end of the dressing arm 220 is rotatably connected to the dressing base 210 and the other end thereof is provided with a dressing portion 230. Wherein a dressing disk is provided at the bottom of the dressing part 230, diamond particles are embedded in the bottom surface of the dressing disk, the dressing arm 220 can swing around the dressing base 210, and at the same time, the dressing disk rotates by itself and applies a certain load to the surface of the polishing pad to dress the upper surface of the polishing pad.

In fig. 13, the conditioning apparatus 200 further includes a guard 10, the guard 10 is covered on the conditioning arm 220, and the guard 10 is configured with an overflow structure 20 to form a liquid film on at least a partial area of the top surface of the guard 10.

The protection member 10 provided on the trimming device 200 of the present invention has the same structure as the protection member 10 provided on the liquid supply device 100, and will not be described herein again. The guard 10 disposed at the upper side of the dressing apparatus 200 is provided with an overflow structure 20 capable of forming a liquid film on at least a partial area of the top surface of the guard 10, effectively ensuring the cleaning and moisturizing of the top surface of the guard, and preventing the crystallization of polishing splashes.

The overflow structure is arranged at the upper part of the protection part 10, and new parts are not introduced, so that the working space is effectively saved; realize the even moisturizing of protector through the overflow principle, avoid the impact of spray bar or nozzle among the conventional art to splash the problem, effectively guarantee the inside operational environment of polishing unit.

Since the overflow groove 20 and the overflow holes 20b have a certain size, it is possible to prevent the clogging of the particulate matter; meanwhile, the inclination of the overflow groove 20 or the misalignment of the central line of the overflow groove 20 and the central line of the fluid pore passage 40 does not affect the cleaning and moisturizing effect of the protection part, effectively controls the processing precision and the installation precision of the overflow structure, and is beneficial to reducing the manufacturing cost of the CMP equipment.

It is understood that the protection member of the present invention can also be used for protecting other components in a chemical mechanical polishing system, such as protection of the periphery and top of a polishing driving component (UPA), protection of a polishing Head/Carrier Head (Carrier Head), etc.

Furthermore, the utility model also provides a chemical mechanical polishing unit, it includes polishing dish 300 and carrier head 400, as shown in FIG. 14, polishing dish 300 upper surface disposes the polishing pad of rotating together with polishing dish 300, carrier head 400 rotates and removes above the polishing pad under the actuation of drive assembly, and carrier head 400 actuation wafer and support the wafer and press in the polishing pad surface.

Further, the chemical mechanical polishing unit further includes the liquid supply device 100 described above and/or the dressing device 200 described above.

In fig. 14, the chemical mechanical polishing unit includes a liquid supply device 100 and a dressing device 200, on which the guard 10 is disposed. The dressing device 200 is connected to a fixing base arranged on one side of the polishing disc 300 through a dressing arm 220, and the dressing arm 220 drives the rotating dressing part 230 to swing so as to dress the surface of the polishing pad; the liquid supply device 100 is disposed on an upper side of the polishing pad to distribute the polishing liquid to the surface of the polishing pad.

During polishing operation, the carrier head 400 presses the surface of the wafer to be polished against the surface of the polishing pad, and the carrier head 400 performs rotation and reciprocating movement along the radial direction of the polishing disk 300, so that the surface of the wafer contacting with the polishing pad is gradually polished; meanwhile, the polishing platen 300 rotates, and the liquid supply device 100 sprays polishing liquid onto the surface of the polishing pad. The wafer is rubbed against the polishing pad by the relative movement of the carrier head 400 and the polishing pad 300 under the chemical action of the polishing liquid to perform polishing.

As a variation of the embodiment shown in fig. 14, the liquid supply device 100 in the chemical mechanical polishing unit is provided with the guard 10, and the guard with the overflow structure is not provided above the dressing device 200; alternatively, the dressing apparatus 200 in the chemical mechanical polishing unit is provided with the guard 10, and the liquid supply apparatus 100 is not provided with the guard with the overflow structure. Particularly, the protection parts are configured, the working environment of the swing arm needs to be considered, the probability of sputtering of the swing arm is judged, and whether the protection parts need to be provided with overflow structures or not is comprehensively determined.

In the description herein, references to the description of the term "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.

Claims (10)

1. The liquid supply device for chemical mechanical polishing is characterized by comprising a liquid supply base and a liquid supply arm, wherein one end of the liquid supply arm is rotatably connected to the liquid supply base, and the other end of the liquid supply arm is provided with a liquid supply pipe facing to the lower side; the upper portion of the liquid supply arm is configured with a guard having an overflow structure to form a film of liquid over at least a portion of a top surface of the guard.

2. The liquid supply apparatus of claim 1, wherein the overflow structure is disposed toward a top of the shielding member, and a liquid film formed by the overflow structure covers at least a portion of a top surface of the shielding member from a high level to a low level.

3. The liquid supply apparatus as claimed in claim 1, wherein the overflow structure includes an overflow groove provided along a length of the shielding member and an extension groove communicating with the overflow groove and located at an end of the shielding member.

4. The liquid supply apparatus as claimed in claim 3, wherein the extension groove is provided along a profile of an end surface of the shielding member, and a depth of the extension groove is less than or equal to a depth of the overflow groove.

5. The liquid supply apparatus as claimed in claim 3, wherein the overflow structure further comprises a liquid inlet hole and a fluid port, the liquid inlet hole being disposed at an end of the shielding member and communicating with the fluid port; the overflow trough is located above the fluid aperture.

6. The liquid supply apparatus as claimed in claim 5, wherein the overflow bath has a trapezoidal shape in a longitudinal section having a wide upper portion and a narrow lower portion, and the sides of the overflow bath are inclined toward the outside, and the adjacent sides form an inclination angle of 10 to 60 °.

7. The liquid supply apparatus as claimed in claim 1, wherein the overflow structure includes an overflow hole, a liquid inlet hole and a fluid duct, the liquid inlet hole disposed at the end of the protection member is connected to the fluid duct, and the overflow hole extends from the inner sidewall of the fluid duct to the top surface of the protection member.

8. A dressing apparatus for chemical mechanical polishing, comprising a dressing base and a dressing arm, wherein one end of the dressing arm is rotatably connected to the dressing base, and the other end of the dressing arm is provided with a dressing part; the upper part of the trimming arm is provided with a guard having an overflow structure to form a liquid film on at least a partial area of the top surface of the guard.

9. The finishing assembly of claim 8, wherein the overflow structure is disposed toward a top of the guard, and forms a liquid film covering a top surface of the guard from high to low; the overflow structure comprises an overflow groove and an extension groove, the overflow groove is arranged along the length direction of the protection piece, and the extension groove is communicated with the overflow groove and is positioned at the end part of the protection piece.

10. A chemical mechanical polishing unit comprising a polishing pad and a carrier head, further comprising a liquid supply device according to any one of claims 1 to 7 and/or a dressing device according to any one of claims 8 to 9.

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