CN217183274U - NMOS pipe high-end drive circuit and car - Google Patents

Abstract

An NMOS pipe high-end driving circuit and an automobile are provided, wherein the driving circuit comprises: the device comprises a boosting module, a filtering module and a voltage output module; the voltage boosting module integrates and boosts the input first voltage and the input second voltage to obtain a third voltage, the third voltage is filtered by the filtering wave module to obtain a fourth voltage, the voltage output module receives the fourth voltage and outputs a fifth voltage to a grid source electrode of the NMOS tube after voltage stabilization, the first voltage is also a power supply voltage of a load, namely the voltage of a drain electrode of the NMOS tube, and the grid voltage of the NMOS tube is greater than the source voltage due to the fact that the fifth voltage is greater than the first voltage, namely the grid voltage of the NMOS tube is greater than the first voltage, and the source voltage is the first voltage when the NMOS tube is conducted, so that the grid voltage of the NMOS is greater than the source voltage, the load which is in butt joint with the high side of the NMOS tube is driven, and the problem that the load is easily started by mistake due to low-side driving in the prior art is solved.

Description

NMOS pipe high-end drive circuit and car

Technical Field

The utility model relates to the field of electronic technology, especially, relate to a high-end drive circuit of NMOS pipe and car.

Background

The positive pole of the low-side driving finger load is connected with the power supply, and the negative pole of the load is connected with the drain electrode of the NMOS tube; the high-side driving finger is characterized in that the anode of the load is connected with the source electrode of the NMOS tube, and the cathode of the load is grounded. In the prior art, most of the loads are driven by adopting a low-side driving mode of an NMOS transistor, and fig. 1 is a low-side driving circuit diagram of the NMOS transistor, as shown in fig. 1, when the low-side driving mode is adopted, a first end of the load is connected with a power supply, and a second end of the load needs to be connected to a drain electrode of an NMOS transistor N1.

However, this is prone to inadvertent grounding at the second end of the load, thereby activating the load, resulting in activating the load when it is not needed.

SUMMERY OF THE UTILITY MODEL

To the not enough that exists among the prior art, the utility model provides a NOMS manages high limit drive circuit and car, it has solved the easy mistake of existence among the prior art and has started this load problem when need not to use the load.

The utility model provides a high-end drive circuit of NMOS pipe, drive circuit includes: the device comprises a boosting module, a filtering module and a voltage output module; the boost module is respectively connected with the first trigger terminal, the first power supply terminal and the second power supply terminal, and is configured to start according to a first trigger signal output by the first trigger terminal, and is further configured to integrate and boost a first voltage output by the first power supply terminal and a second voltage output by the second power supply terminal to obtain a third voltage; the filtering module is connected with the output end of the boosting module and used for filtering the third voltage output by the boosting module to obtain a fourth voltage; the input end of the voltage output module is connected with the output end of the filtering module, the first output end of the voltage output module is connected with the grid electrode of the NMOS tube, and the second output end of the voltage output module is connected with the source electrode of the NMOS tube, and is used for receiving the fourth voltage output by the filtering module and outputting the fourth voltage to the grid electrode of the NMOS tube through the first output end of the voltage output module; and the voltage output module is also used for reducing the fourth voltage to obtain a fifth voltage and outputting the fifth voltage to the source electrode of the NMOS tube through the second end of the voltage output module.

Optionally, the boost module comprises: the circuit comprises a first resistor, a second resistor, a first triode, a third resistor, a second triode, a third triode, a first capacitor, a second capacitor and a first diode; two ends of the first resistor are respectively connected with the first trigger end and the base electrode of the first triode; two ends of the second resistor are respectively connected with the base electrode and the emitting electrode of the first triode; the collector of the first triode is connected with the base of the second triode; a collector of the second triode is connected with the second power supply end, and an emitter of the second triode is connected with the first end of the first capacitor; two ends of the third resistor are respectively connected with the collector electrode of the first triode and the collector electrode of the second triode; the base electrode of the third triode is connected with the collector electrode of the first triode, the collector electrode of the third triode is grounded, and the emitter electrode of the third triode is connected with the emitter electrode of the second triode; the anode of the first diode is connected with the first power supply end, and the cathode of the first diode is respectively connected with the second end of the first capacitor and the input end of the filter module; the second capacitor is connected in parallel with the first capacitor.

Optionally, the filtering module includes: a second diode, a third capacitor and a fourth capacitor; the anode of the second diode is connected with the output end of the boosting module, and the cathode of the second diode is connected with the first end of the third capacitor; the second end of the third capacitor is grounded; the fourth capacitor is connected in parallel with the third capacitor.

Optionally, the voltage output module includes: the fourth triode, the fourth resistor and the third voltage stabilizing diode; a base electrode of the fourth triode is connected with a negative electrode of the third voltage-stabilizing diode, and an emitting electrode of the fourth triode is connected with a grid electrode of the NMOS tube; two ends of the fourth resistor are respectively connected with a collector and a base of the fourth triode; and the anode of the third voltage stabilizing diode is connected with the source electrode of the NMOS tube.

Optionally, the voltage output module further includes a fifth capacitor, and two ends of the fifth capacitor are respectively connected to the emitter of the fourth triode and the anode of the third zener diode, and are configured to filter the fifth voltage.

Optionally, the driving circuit further includes a switch module, an input end of the switch module is connected to the second trigger end and the first output end and the second output end of the voltage output module, and an output end of the switch module is connected to the gate and the source of the NMOS transistor, respectively, and is configured to control the voltage output module to output a fourth voltage and a fifth voltage to the gate and the source of the NMOS transistor according to the second trigger signal output by the second trigger end.

Optionally, the switch module comprises: a fifth resistor, a sixth resistor, a fifth triode and a sixth triode; a first end of the fifth resistor is connected with a first output end of the voltage output module, and a second end of the fifth resistor is connected with a base electrode of the fifth triode; a collector of the fifth triode is connected with a first end of the fifth resistor, and an emitter of the fifth triode is connected with a grid electrode of the NMOS tube; a first end of the sixth resistor is connected with the second trigger end, and a second end of the sixth resistor is connected with a base electrode of the sixth triode; a collector electrode of the sixth triode is respectively connected with the second output end of the voltage output module and the source electrode of the NMOS tube; and the emitter of the sixth triode is connected with the emitter of the fifth triode.

An automobile comprises an NMOS high-end driving circuit.

Optionally, the vehicle includes a third power supply terminal, a seventh resistor, an eighth resistor, an NMOS transistor, and a load; the drain electrode of the NMOS tube is connected with the third power supply end, and the grid electrode of the NMOS tube is connected with the first output end of the voltage output module through a seventh resistor; the source electrode of the NMOS tube is grounded through a load; and two ends of the eighth resistor are respectively connected with the grid electrode and the source electrode of the NMOS tube.

Optionally, the load is an electric motor.

Compared with the prior art, the utility model discloses following beneficial effect has:

the voltage boosting module integrates and boosts the input first voltage and the input second voltage to obtain a third voltage, the third voltage is filtered by the filtering wave module to obtain a fourth voltage, the voltage output module receives the fourth voltage and outputs a fifth voltage to a grid source electrode of the NMOS tube after voltage stabilization, the first voltage is also a power supply voltage of a load, namely the voltage of a drain electrode of the NMOS tube, and the grid voltage of the NMOS tube is greater than the source voltage due to the fact that the fifth voltage is greater than the first voltage, namely the grid voltage of the NMOS tube is greater than the first voltage, and the source voltage is the first voltage when the NMOS tube is conducted, so that the grid voltage of the NMOS is greater than the source voltage, the load which is in butt joint with the high side of the NMOS tube is driven, and the problem that the load is easily started by mistake due to low-side driving in the prior art is solved.

Drawings

FIG. 1 is a circuit diagram of a low side driving circuit of a prior art NMOS transistor;

fig. 2 is a structural diagram of an NMOS high-side driver circuit according to an embodiment of the present invention;

fig. 3 is a circuit diagram of a boost module according to an embodiment of the present invention;

fig. 4 is a circuit diagram of a filtering module according to an embodiment of the present invention;

fig. 5 is a circuit diagram of a voltage output module according to an embodiment of the present invention;

fig. 6 is a circuit diagram of a switch module according to an embodiment of the present invention;

fig. 7 is a circuit diagram of an NMOS high-side driver circuit according to an embodiment of the present invention;

fig. 8 is a partial circuit diagram of an automobile according to an embodiment of the present invention.

Detailed Description

The technical solution of the present invention will be further explained with reference to the accompanying drawings and embodiments.

Fig. 2 is a structural diagram of a high-end driving circuit of an NMOS transistor according to an embodiment of the present invention, as shown in fig. 2, the driving circuit includes: the boost module 100, the filter module 200 and the voltage output module 300;

the boosting module 100 is respectively connected to the first trigger terminal V0, the first power terminal V1, and the second power terminal V2, and configured to start according to a first trigger signal output by the first trigger terminal V0, and further configured to integrate and boost a first voltage output by the first power terminal V1 and a second voltage output by the second power terminal V2 to obtain a third voltage;

the filtering module 200 is connected to the output end of the boosting module 100, and is configured to filter the third voltage output by the boosting module 100 to obtain a fourth voltage;

the input end of the voltage output module 300 is connected to the output end of the filtering module 200, the first output end of the voltage output module 300 is connected to the gate of the NMOS transistor, and the second output end of the voltage output module 300 is connected to the source of the NMOS transistor, and is configured to receive the fourth voltage output by the filtering module 200; and is further configured to step down the fourth voltage to obtain a fifth voltage, and output the fifth voltage to the gate and the source of the NMOS transistor through the first output terminal and the second terminal of the voltage output module 300.

The working principle of the embodiment is as follows: when high-side driving is adopted, the drain electrode of the NMOS tube is connected with a first power supply end V1, the first end of the load is connected with the source electrode of the NMOS tube, the second end of the load is grounded, the first power supply end is usually power supply voltage, and the second power supply end is the starting voltage of the NMOS tube after the power supply voltage is reduced; therefore, the driving voltage of the load is the voltage output by the first power supply terminal V1, if the NMOS transistor is to be driven, the gate voltage of the NMOS transistor is higher than the source voltage, the voltage of the first power supply terminal V1 and the voltage of the second power supply terminal V2 are integrated and boosted by the voltage boosting module 100 to obtain a third voltage, the third voltage is filtered by the filtering module 200 to obtain a fourth voltage, the voltage output module 300 receives the fourth voltage and outputs a fifth voltage to the gate source of the NMOS transistor after voltage stabilization, the first voltage is also the power supply voltage of the load, i.e. the drain voltage of the NMOS transistor, since the fifth voltage is greater than the first voltage, i.e. the gate voltage of the NMOS transistor is greater than the first voltage, and the source voltage is the first voltage when the NMOS transistor is turned on, the gate voltage of the NMOS is greater than the source voltage, thereby realizing the driving of the load connected to the high side of the NMOS transistor, the problem of low limit drive leads to the load to start this load by mistake easily in prior art is solved.

Fig. 3 is a circuit diagram of a boosting module 100 according to an embodiment of the present invention, as shown in fig. 3, the boosting module 100 includes: the circuit comprises a first resistor R1, a second resistor R2, a first triode Q1, a third resistor R3, a second triode Q2, a third triode Q3, a first capacitor C1, a second capacitor C2 and a first diode D1; two ends of the first resistor R1 are respectively connected with the first trigger end V0 and the base of the first triode Q1; two ends of the second resistor R2 are respectively connected with the base electrode and the emitter electrode of the first triode Q1; the collector of the first triode Q1 is connected with the base of the second triode Q2; a collector of the second transistor Q2 is connected to the second power supply terminal V2, and an emitter of the second transistor Q2 is connected to a first terminal of the first capacitor C1; two ends of the third resistor R3 are respectively connected with the collector of the first triode Q1 and the collector of the second triode Q2; the base of the third triode Q3 is connected with the collector of the first triode Q1, the collector of the third triode Q3 is grounded, and the emitter of the third triode Q3 is connected with the emitter of the second triode Q2; the anode of the first diode D1 is connected to the first power supply terminal V1, and the cathode of the first diode D1 is connected to the second terminal of the first capacitor C1 and the input terminal of the filter module 200, respectively; the second capacitor C2 is connected in parallel with the first capacitor C1.

The working principle of the embodiment is as follows: when the first trigger terminal V0 sends a high-level trigger signal to the base of the first triode Q1 through the first resistor R1, the first triode Q1 is turned on, the base of the third triode Q3 receives a low-level signal through the grounding of the first triode Q1, the third triode Q3 is turned on, the first power terminal V1 forms a loop to the first capacitor C1 and the second capacitor C2 through the first diode D1, the first power terminal V1 charges the first capacitor C1 and the second capacitor C2, and the TP1 outputs the voltage of the first power terminal V1 to the filtering module 200; when the trigger terminal V0 outputs a low level signal, the first transistor Q1 is turned off, the base of the second transistor Q2 receives a high level signal output by the second power terminal V2, and the second transistor Q2 is turned on, so that the voltage of TP2 is the voltage of the second power terminal V2, and the voltage output by TP1 to the filter module 200 is the voltage of the first power terminal V1 plus the voltage of the second power terminal V2. The voltage output by the TP1 to the filtering module 200 is raised by controlling the first transistor Q1 to be turned on or off.

Fig. 4 is a circuit diagram of a filtering module 200 according to an embodiment of the present invention, as shown in fig. 4, the filtering module 200 includes: a second diode D2, a third capacitor C3, and a fourth capacitor C4; the anode of the second diode D2 is connected to the output terminal of the boost module 100, and the cathode of the second diode D2 is connected to the first terminal of the third capacitor C3; a second end of the third capacitor C3 is grounded; the fourth capacitor C4 is connected in parallel with the third capacitor C3.

The working principle of the embodiment is as follows: the voltage waveform output by the boost module 100 is a direct current with a square wave, and the voltage value of the direct current with a square wave outputs a first voltage output by the first power supply terminal V1 in a first period of time, and outputs the sum of the first voltage output by the first power supply terminal V1 and a second voltage output by the second power supply terminal V2 in a second period of time, that is, the voltage value output by the boost module 100 jumps between two voltage values, and the voltage output by the boost module 100 is filtered by the filter module 200 to output a stable voltage between the two voltage values, that is, a fourth voltage.

Fig. 5 is a circuit diagram of a voltage output module 300 according to an embodiment of the present invention, as shown in fig. 5, the voltage output module 300 includes: a fourth triode Q4, a fourth resistor R4 and a third zener diode D3; the base electrode of the fourth triode Q4 is connected with the negative electrode of the third voltage-stabilizing diode D3, and the emitter electrode of the fourth triode Q4 is connected with the grid electrode of the NMOS tube; two ends of the fourth resistor R4 are respectively connected with the collector and the base of the fourth triode Q4; the anode of the third zener diode D3 is connected to the source of the NMOS transistor.

The working principle of the embodiment is as follows: when the filtering module 200 outputs the third voltage, the base of the fourth transistor Q4 receives a high level signal through the fourth resistor R4, the fourth transistor Q4 is turned on, the third zener diode D3 stabilizes the voltage, a fifth voltage is obtained at the emitter of the fourth transistor Q4 and the anode of the third zener diode D3, and the fifth voltage is output to the gate-source of the NMOS transistor, and the gate voltage of the NMOS transistor is higher than the source voltage of the NMOS transistor, so that the NMOS transistor is turned on.

In this embodiment, as shown in fig. 5, the voltage output module 300 further includes a fifth capacitor C5, and two ends of the fifth capacitor C5 are respectively connected to the emitter of the fourth transistor Q4 and the anode of the third zener diode D3, so as to filter the fourth voltage and the fifth voltage.

In another embodiment of the present invention, the driving circuit further includes a switch module, the input terminal of the switch module is respectively connected to the second trigger terminal V3, the first output terminal and the second output terminal of the voltage output module 300 are connected to each other, the output terminal of the switch module is respectively connected to the gate and the source of the NMOS transistor, and the voltage output module 300 outputs the fifth voltage to the gate and the source of the NMOS transistor according to the second trigger signal output by the second trigger terminal V3.

Fig. 6 is a circuit diagram of a switch module according to an embodiment of the present invention, as shown in fig. 6, the switch module includes: a fifth resistor R5, a sixth resistor R6, a fifth triode Q5 and a sixth triode Q6; a first end of the fifth resistor R5 is connected to the first output end of the voltage output module 300, and a second end of the fifth resistor R5 is connected to the base of the fifth transistor Q5; a collector of the fifth triode Q5 is connected to a first end of the fifth resistor R5, and an emitter of the fifth triode Q5 is connected to a gate of the NMOS transistor; a first end of the sixth resistor R6 is connected to the second trigger end, and a second end of the sixth resistor R6 is connected to the base of the sixth transistor Q6; a collector of the sixth triode Q6 is respectively connected to the second output terminal of the voltage output module 300 and the source of the NMOS transistor; the emitter of the sixth transistor Q6 is connected to the emitter of the fifth transistor Q5.

The working principle of the embodiment is as follows: when the second trigger signal output by the second trigger terminal V3 is a high level signal, the base of the fifth triode Q5 receives the high level signal and is turned on, the sixth triode Q6 is turned off, and the first output terminal of the voltage output module 300 outputs a fourth voltage to the gate of the NMOS transistor through the emitter of the fifth triode Q5; the second output terminal of the voltage output module 300 outputs a fifth voltage to the source of the NMOS transistor through the collector of the sixth transistor Q6, the gate voltage of the NMOS transistor is greater than the source voltage, and the NMOS transistor is turned on. When the second trigger signal output by the second trigger terminal V3 is a low level signal, and the base of the sixth triode Q6 receives the low level signal, the sixth triode Q6 is turned on, and the fifth triode Q5 is turned off, so that the gate and the source of the NMOS transistor both receive the fifth voltage output by the second terminal of the voltage output module 300, the voltage difference between the gate and the source of the NMOS transistor is 0, and the NMOS transistor is turned off. Therefore, the switch control of the NMOS transistor is realized by the second trigger signal output by the second trigger terminal V3.

Fig. 7 is a circuit diagram of a high-end driving circuit of NMOS transistor according to an embodiment of the present invention, the specific working principle is consistent with the working principle of the above embodiment.

In another embodiment of the present invention, an automobile comprises an NMOS high-side driver circuit; fig. 8 is a partial circuit diagram of an automobile according to an embodiment of the present invention, as shown in fig. 8, the automobile includes: the circuit comprises a first power supply end V1, a seventh resistor R7, an eighth resistor R8, an NMOS transistor N2 and a load; the drain of the NMOS transistor N2 is connected to the third power terminal, and the gate of the NMOS transistor N2 is connected to the first output terminal of the voltage output module 300 through a seventh resistor R7; the source electrode of the NMOS transistor N2 is grounded through a load; two ends of the eighth resistor R8 are respectively connected with the gate and the source of the NMOS transistor N2.

The working principle of the embodiment is as follows: when the gate of the NMOS transistor N2 receives the fourth voltage through the seventh resistor R7, the source of the NMOS transistor N2 receives the fifth voltage, and the fourth voltage is greater than the fifth voltage, since the fourth voltage is obtained by integrating and filtering the first voltage and the second voltage, the fourth voltage is higher than the first voltage output by the first power terminal V1, and the fifth voltage is obtained by stabilizing the fourth voltage, when the gate of the NMOS transistor N2 receives the voltage greater than the first voltage of the first power terminal V1, the voltage of the source is the voltage of the first power terminal V1 when the NMOS transistor N2 is turned on, so the voltages of the gate and the source are greater than the turn-on voltage (since the fourth voltage is V1+ V2 and V2 is greater than the turn-on voltage), the NMOS transistor N2 is turned on, and the load is powered on through the NMOS transistor N2, thereby electrically operating.

In another embodiment of the present invention, the load is a motor for driving other electrical components to work.

It is noted that, in this document, relational terms such as "first" and "second," and the like, may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.

Finally, although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that the present invention can be modified or replaced by other means without departing from the spirit and scope of the present invention, which should be construed as limited only by the appended claims.

Claims (10)

1. The NMOS transistor high-end driving circuit is characterized by comprising: the device comprises a boosting module, a filtering module and a voltage output module;

the boosting module is respectively connected with the first trigger end, the first power end and the second power end, and is used for starting according to a first trigger signal output by the first trigger end and integrating and boosting a first voltage output by the first power end and a second voltage output by the second power end to obtain a third voltage;

the filter module is connected with the output end of the boost module and is used for filtering the third voltage output by the boost module to obtain a fourth voltage;

the input end of the voltage output module is connected with the output end of the filtering module, the first output end of the voltage output module is connected with the grid electrode of the NMOS tube, the second output end of the voltage output module is connected with the source electrode of the NMOS tube and used for receiving the fourth voltage output by the filtering module and reducing the voltage of the fourth voltage to obtain a fifth voltage, and the fifth voltage is output to the grid electrode and the source electrode of the NMOS tube through the first output end and the second output end of the voltage output module.

2. The NMOS high-side driver circuit of claim 1, wherein said boost module comprises: the circuit comprises a first resistor, a second resistor, a first triode, a third resistor, a second triode, a third triode, a first capacitor, a second capacitor and a first diode;

two ends of the first resistor are respectively connected with the first trigger end and the base electrode of the first triode;

two ends of the second resistor are respectively connected with the base electrode and the emitting electrode of the first triode;

the collector of the first triode is connected with the base of the second triode;

a collector of the second triode is connected with the second power supply end, and an emitter of the second triode is connected with the first end of the first capacitor;

two ends of the third resistor are respectively connected with the collector electrode of the first triode and the collector electrode of the second triode;

the base electrode of the third triode is connected with the collector electrode of the first triode, the collector electrode of the third triode is grounded, and the emitter electrode of the third triode is connected with the emitter electrode of the second triode;

the anode of the first diode is connected with the first power supply end, and the cathode of the first diode is respectively connected with the second end of the first capacitor and the input end of the filter module;

the second capacitor is connected in parallel with the first capacitor.

3. The NMOS high-side driver circuit of claim 1, wherein said filtering module comprises: a second diode, a third capacitor and a fourth capacitor;

the anode of the second diode is connected with the output end of the boosting module, and the cathode of the second diode is connected with the first end of the third capacitor;

the second end of the third capacitor is grounded;

the fourth capacitor is connected in parallel with the third capacitor.

4. The NMOS high-side driver circuit of claim 1, wherein said voltage output module comprises: the fourth triode, the fourth resistor and the third voltage stabilizing diode;

a base electrode of the fourth triode is connected with a negative electrode of the third voltage-stabilizing diode, and an emitting electrode of the fourth triode is connected with a grid electrode of the NMOS tube;

two ends of the fourth resistor are respectively connected with a collector and a base of the fourth triode;

and the anode of the third voltage stabilizing diode is connected with the source electrode of the NMOS tube.

5. The NMOS transistor high-side driver circuit as claimed in claim 4, wherein the voltage output module further comprises a fifth capacitor, and both ends of the fifth capacitor are respectively connected to an emitter of the fourth transistor and an anode of the third zener diode for filtering the fifth voltage.

6. The high-side driver circuit of claim 1, further comprising a switch module, wherein an input terminal of the switch module is respectively connected to the second trigger terminal, the first output terminal of the voltage output module, and the second output terminal of the voltage output module, and an output terminal of the switch module is respectively connected to the gate and the source of the NMOS transistor, for controlling the voltage output module to respectively output a fifth voltage to the gate and the source of the NMOS transistor according to the second trigger signal output by the second trigger terminal.

7. The NMOS high-side driver circuit of claim 6, wherein the switch module comprises: a fifth resistor, a sixth resistor, a fifth triode and a sixth triode;

a first end of the fifth resistor is connected with a first output end of the voltage output module, and a second end of the fifth resistor is connected with a base electrode of the fifth triode;

a collector of the fifth triode is connected with a first end of the fifth resistor, and an emitter of the fifth triode is connected with a grid electrode of the NMOS tube;

a first end of the sixth resistor is connected with the second trigger end, and a second end of the sixth resistor is connected with a base electrode of the sixth triode;

a collector electrode of the sixth triode is respectively connected with the second output end of the voltage output module and the source electrode of the NMOS tube; and the emitter of the sixth triode is connected with the emitter of the fifth triode.

8. An automobile, characterized in that the automobile comprises the NMOS high-end driving circuit of any one of claims 1-7.

9. The vehicle of claim 8, wherein the vehicle comprises a third power supply terminal, a seventh resistor, an eighth resistor, an NMOS transistor and a load;

the drain electrode of the NMOS tube is connected with the third power supply end, and the grid electrode of the NMOS tube is connected with the first output end of the voltage output module through a seventh resistor; the source electrode of the NMOS tube is grounded through a load;

and two ends of the eighth resistor are respectively connected with the grid electrode and the source electrode of the NMOS tube.

10. An automobile as claimed in claim 9, wherein the load is an electric motor.

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