CN217134875U

CN217134875U - Large-energy multi-wavelength pulse width adjustable laser

Info

Publication number: CN217134875U
Application number: CN202220111467.3U
Authority: CN
Inventors: 贾养春; 刘国宏
Original assignee: Nanjing Baifu Laser Technology Co ltd
Current assignee: Nanjing Baifu Laser Technology Co ltd
Priority date: 2022-01-17
Filing date: 2022-01-17
Publication date: 2022-08-05
Anticipated expiration: 2032-01-17

Abstract

The utility model discloses a big energy multi-wavelength pulse width adjustable laser, including pumping source, collimating lens, focusing lens, Nd YAG + Cr YAG bonded crystal, guide rail a, half-wave plate a, isolator, plastic lens a, degree total reflection mirror a, half-wave plate b, 45 degree total reflection mirror b, Nd YAG crystal a, plastic lens b, xenon lamp, 45 degree total reflection mirror c, 45 degree total reflection mirror d, Nd: YAG crystal b, KTP doubling crystal, spectroscope, guide rail b, 45 degree total reflection mirror e, half-wave plate c, prism a, hand tool, half-wave plate d, prism b, plastic mirror a, plastic mirror b, emerald diamond crystal a, 45 degree total reflection mirror f, plastic mirror c, plastic mirror d and ruby crystal. The utility model discloses can realize hundred milli-focus level 1064nm, 532nm, 585nm, 650nm, 755nm, six kinds of wavelength output of 694nm when using, and the pulse width is hundred picoseconds to nanosecond level continuously adjustable, and this laser instrument can satisfy medical beauty field pigment pathological change comprehensive control, scar treatment etc. and its market demand nature is big.

Description

Large-energy multi-wavelength pulse width adjustable laser

Technical Field

The utility model relates to a laser technical field especially relates to a big energy multi-wavelength pulsewidth adjustable laser.

Background

The laser is a device capable of emitting laser, and is applied to various fields when in use: such as industrial processing, scientific and technological research and development, medical cosmetology, laser storage, laser display, laser radar and the like, a patent with publication number CN209823102U in the prior art discloses a pulse width adjustable solid laser, which comprises a pumping shell and a crystal shell positioned at the right side of the pumping shell, the back side wall of the crystal shell is movably connected with a guide rail through a mechanical part, the top of the crystal shell is connected with the output end of a stepping motor, the inner cavity of the pumping shell is sequentially provided with a pumping source, a collimating lens and a focusing lens from left to right, the pump source is adhered to the center of the inner wall of the left side of the pump shell, the collimating lens and the focusing lens are respectively connected to the right side of the pump source through a positioning piece, the laser crystal with the trapezoid structure is nested on the left side of the inner cavity of the crystal shell, and the right end of the laser crystal is bonded with a saturable absorber with a triangular structure through high temperature. When the LED lamp is used, the wavelength output is single, and the using effect is single.

To this end, we propose a large-energy multi-wavelength pulse width tunable laser to solve the above problems.

SUMMERY OF THE UTILITY MODEL

The utility model aims at solving the defects existing in the prior art and providing a large-energy multi-wavelength pulse width tunable laser.

In order to achieve the above purpose, the utility model adopts the following technical scheme:

a large-energy multi-wavelength pulse width adjustable laser comprises a pumping source, a collimating lens, a focusing lens, Nd, YAG + Cr, YAG bonded crystal, a guide rail a, a half-wave plate a, an isolator, a shaping lens a, a degree total reflection mirror a, a half-wave plate b, a 45-degree total reflection mirror b, Nd, YAG crystal a, a shaping lens b, a xenon lamp, a 45-degree total reflection mirror c, a 45-degree total reflection mirror d, Nd, YAG crystal b, a KTP frequency doubling crystal, a spectroscope, a guide rail b, a 45-degree total reflection mirror e, a half-wave plate c, a prism a, a hand tool, a half-wave plate d, a prism b, a shaping mirror a, a shaping mirror b, a emerald sapphire crystal a, a 45-degree total reflection mirror f, a shaping mirror c, a shaping mirror d and a ruby crystal.

The collimating lens, the focusing lens, the Nd, YAG + Cr, YAG bonded crystal, the half-wave plate a, the isolator, the shaping lens a and the 45-degree total reflection lens a are sequentially arranged in the light irradiation direction of the pumping source, wherein the Nd, YAG + Cr, YAG bonded crystal is movably arranged between the focusing lens and the half-wave plate a through a guide rail a.

The half-wave plate b and the 45-degree total reflection mirror b are arranged in sequence in the reflection direction of the 45-degree total reflection mirror a.

The laser comprises a laser body, a laser beam, a laser diode, a reflector, a shaping lens, a 45-degree total reflection mirror and a xenon lamp, wherein the Nd-YAG crystal a, the shaping lens b and the 45-degree total reflection mirror are sequentially arranged in the reflection direction of the 45-degree total reflection mirror b, the xenon lamp is arranged between the Nd-YAG crystal a and the Nd-YAG crystal b and pumps the Nd-YAG crystal a and the Nd-YAG crystal b, and the 45-degree total reflection mirror d is arranged in the reflection direction of the 45-degree total reflection mirror.

The Nd-YAG crystal b, the KTP frequency doubling crystal, the spectroscope and the 45-degree total reflection mirror e are sequentially arranged in the reflection direction of the 45-degree total reflection mirror d, wherein the KTP frequency doubling crystal and the spectroscope are movably arranged between the Nd-YAG crystal b and the 45-degree total reflection mirror e through a guide rail b.

The half-wave plate c, the prism a, the half-wave plate d, the prism b and the 45-degree total reflection mirror f are sequentially arranged in the reflection direction of the 45-degree total reflection mirror e, wherein light in the refraction direction of the prism a is emitted through the hand tool.

The shaping mirror a, the shaping mirror b and the emerald crystal a are arranged in sequence in the refraction direction of the prism b.

The shaping mirror c, the shaping mirror d and the ruby crystal are sequentially arranged in the reflection direction of the 45-degree total reflection mirror f.

Compared with the prior art, the beneficial effects of the utility model are that:

the utility model provides a but high energy multi-wavelength pulse width modulation laser can realize hundred milli-focal level 1064nm, 532nm, 585nm, 650nm, 755nm, six kinds of wavelength output of 694nm, and the pulse width is hundred picoseconds to nanosecond level continuously adjustable, and this laser can satisfy medical cosmetic field pigment pathological change comprehensive treatment, scar treatment etc. its market demand nature is big.

Drawings

Fig. 1 is a light path diagram of a high-energy multi-wavelength pulse width tunable laser according to the present invention;

fig. 2 is a light path diagram of nanosecond hundred milli-focus level 1064nm/532nm/650nm/585nm in the large-energy multi-wavelength pulse width tunable laser according to the present invention;

fig. 3 is a diagram of an optical path of 755nm in nanosecond hundred milli-focal level in a large-energy multi-wavelength pulse width tunable laser according to the present invention;

fig. 4 is an optical path diagram of a nanosecond hundred-milli-focal-length 694nm in a large-energy multi-wavelength pulse width tunable laser according to the present invention.

In the figure: 1. a pump source; 2. a collimating lens; 3. a focusing lens; 4. nd, YAG + Cr, YAG bonded crystal; 5. a guide rail a; 6. a half-wave plate a; 7. an isolator; 8. a shaping lens a; 9. a 45-degree total reflection mirror a; 10. a half-wave plate b; 11. a 45-degree total reflection mirror b; 12. nd is YAG crystal a; 13. a shaping lens b; 14. a xenon lamp; 15. a 45-degree total reflection mirror c; 16. a 45-degree total reflection mirror d; 17. nd is YAG crystal b; 18. KTP frequency doubling crystal; 19. a beam splitter; 20. a guide rail b; 21. a 45-degree total reflection mirror e; 22. a half-wave plate c; 23. a prism a; 24. a hand tool; 25. A half-wave plate d; 26. a prism a; 27. a shaping mirror a; 28. a shaping mirror b; 29. emerald crystal a; 30. a 45-degree total reflection mirror f; 31. a shaping mirror c; 32. a shaping mirror d; 33. ruby crystal.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments.

The first embodiment is as follows:

referring to fig. 1-4, a large-energy multi-wavelength pulse width tunable laser, a pump source 1, a collimating lens 2, a focusing lens 3, a Nd: YAG + Cr: YAG bonded crystal 4 and a guide rail a5 form a pulse width tunable passive Q-switched laser, the output pulse width is tunable, and 1064nm output of hundreds of picoseconds to nanoseconds millifocal level can be realized, wherein the pump source 1 is 808nmLD of 30W, the collimating lens 2 and the focusing lens 3 shape the output light of the pump source 1, the Nd: YAG + Cr: YAG bonded crystal 4 is movably arranged between the focusing lens 3 and a half-wave plate a6 through a guide rail a5, so that the position of the Nd: YAG + Cr: YAG bonded crystal 4 is conveniently adjusted through a guide rail a5, the Nd: YAG + Cr: YAG bonded crystal 4 forms a passive Q-switched microchip with tunable output pulse width, and the position of the guide rail a5 can be controlled by the guide rail a 5.

Example two:

referring to fig. 1-2, a large-energy multi-wavelength pulse width tunable laser, according to the first embodiment, see fig. 2, further cooperating with an isolator 7, a shaping lens a8, a 45-degree total reflection mirror a9, a half-wave plate b10, a 45-degree total reflection mirror b11, a Nd: YAG crystal a12, a shaping lens b13, a xenon lamp 14, a 45-degree total reflection mirror c15, a 45-degree total reflection mirror d16, a Nd: YAG crystal b17, a KTP frequency doubling crystal 18, a beam splitter 19, a guide rail b20, a 45-degree total reflection mirror e21, a half-wave plate c22, a prism a23 and a hand tool 24 to form a pulse width tunable nanosecond hundred millifocal level 1064nm/532nm/650nm/585nm wavelength laser, wherein the half-wave plate a6, the isolator 7, the shaping lens a8 and the 45-degree total reflection mirror a9 are sequentially arranged in the 1064nm polarization direction of the pump source 1, and the half-wave plate a6 irradiates the 1064nm polarization laser in the 1064nm isolator in the 1064nm polarization direction, the shaping lens a8 shapes the 1064nm output emitted at the isolator 7 to obtain a laser mode capable of realizing high-efficiency amplification, for example, the rear amplification Nd is realized, the YAG crystal a12 has the size of 8mm in diameter and 100mm in length, and the 1064nm collimated light passing through the shaping lens a8 is 7mm in diameter according to the parameters of the shaping lens a8, so that the collimated light can be incident to the amplification Nd, the YAG crystal a12 can realize high-efficiency amplification, and the 45-degree full-mirror a9 is coated with HR @1064 nmn;

the half-wave plate b10 and the 45-degree total reflection mirror b11 are arranged in sequence in the reflection direction of the 45-degree total reflection mirror a9, the half-wave plate b10 is a 1064nm half-wave plate which can control the polarization direction of light with wavelength of 1064nm passing through the half-wave plate, the twice amplified 1064nm wavelength light is subjected to efficient frequency doubling when passing through a frequency doubling crystal, and a 45-degree total-reflection mirror b11 is coated with an HR @1064nmn, Nd: YAG crystal a12, shaping lens b13 and 45-degree total reflection mirror c15 are arranged in sequence in the reflection direction of 45-degree total reflection mirror b11, Nd: YAG crystal a12 is used for primary amplification of 1064nm laser passing through the YAG crystal, a shaping lens b13 is used for primary amplification and 1064nm laser shaping to obtain high-efficiency secondary amplification, and a xenon lamp 14 is arranged in a Nd: YAG crystal a12 and Nd: YAG crystal b17 and for Nd: YAG crystal a12 and Nd: YAG crystal b17 provides a pump, a 45-degree full-reflection mirror d16 is arranged in the reflection direction of the 45-degree full-reflection mirror c15, and the 45-degree full-reflection mirror c15 and the 45-degree full-reflection mirror d16 are both coated with films HR @1064 nmn; the Nd is that YAG crystal b17, KTP frequency doubling crystal 18, spectroscope 19 and 45 degree total reflection mirror e21 are arranged in the reflection direction of 45 degree total reflection mirror d16 in turn, the size of Nd is YAG crystal b17, the diameter is 9mm, the length is 100mm, 1064nm laser after general two-stage amplification of 1064nm laser can reach 1 joule;

the KTP frequency doubling crystal 18 and the spectroscope 19 are movably arranged between a Nd-YAG crystal b17 and a 45-degree total reflection mirror e21 through a guide rail b20, the KTP frequency doubling crystal 18 is used for frequency doubling to realize 532nm laser output, generally, hundreds of milli-joule output can be realized, the spectroscope 19 is coated with HR @1064nm and AR @532nm, when 532nm laser is output, the laser is transmitted through 532nm to realize output, the guide rail b20 is convenient for adjusting the positions of the KTP frequency doubling crystal 18 and the spectroscope 19, the KTP frequency doubling crystal 18 is controlled to be in an optical path, 1064nm laser or 532nm laser is determined to be output, the 45-degree total reflection mirror e21 is coated with HR 1064nmn &532nm, the half-wave plate c22 and the prism a23 are sequentially arranged in the reflection direction of the 45-degree total reflection mirror e21, the half-wave plate c22 is a 1064nm &532nm half-wave plate, the polarization direction passing through the half-wave plate is determined by controlling the optical axis direction, so that the half-wave plate is reflected or transmitted through the prism a23, light in the refraction direction of the prism a23 is emitted out through the hand tool 24, the hand tool 24 is a detachable dye hand tool, nanosecond hundred-milli-focal-length 532nm light is incident, hundred-milli-focal-length 650nm or 585nm light can be output, and the current Qingdao Haitai has a mature product.

And (3) implementation:

referring to fig. 1-3, a large energy multi-wavelength pulse width tunable laser, according to the second embodiment, see fig. 3, further cooperating with a half-wave plate d25, a prism b26, a shaping mirror a27, a shaping mirror b28 and a emerald crystal a29 to form a pulse width tunable nanosecond hundred milli-joule 755nm wavelength laser, wherein the half-wave plate d25 and the prism b26 are sequentially disposed in the transmission direction of the prism a23, the half-wave plate d25 is a 532nm half-wave plate, the polarization direction of 532nm laser passing through the half-wave plate is determined by controlling the optical axis direction thereof, so as to determine to be reflected or transmitted when passing through the prism b26, the shaping mirror a27, the shaping mirror b28 and the emerald crystal a29 are sequentially disposed in the refraction direction of the prism b26, the shaping mirror a27 cooperates with the shaping mirror b28 to shape the light reflected by the prism b26, the pumped emerald crystal a29 realizes a 755nm output of nanosecond milli-picosecond to the emerald crystal a 755nm, and the left end face of the HR 29, AR @532nm, a right end face is coated with PR @755nm, R is 50% @755nm532nm light and is located at an absorption peak of the emerald crystal, and a 532nm pump of hundred-hero Job's own-hundred picoseconds to nanosecond level can output 755nm output of hundred-hero Job's own-hundred picoseconds to nanosecond level.

And (4) implementation:

referring to fig. 1-4, a large-energy multi-wavelength pulse width tunable laser, according to the third embodiment, referring to fig. 4, a 45-degree total reflection mirror f30 is arranged in the transmission direction of a prism b26, and then a pulse width tunable nanosecond hundred-milli-focal-length 694nm wavelength laser is formed by matching a 45-degree total reflection mirror f30, a shaping mirror c31, a shaping mirror d32 and a ruby crystal 33, the shaping mirror c31, the shaping mirror d32 and the ruby crystal 33 are sequentially arranged in the reflection direction of the 45-degree total reflection mirror f30, the 45-degree total reflection mirror f30 is coated with HR @532nm, the shaping mirror c31 is matched with the shaping mirror d32 to shape light reflected by the 45-degree total reflection mirror f30, the ruby crystal 33 is pumped, hundreds of millijoules hundred picoseconds to nanosecond 694nm output is achieved, 532nm light is located at an absorption peak of the ruby crystal 33, and hundreds of millijoules hundred picoseconds to nanosecond 532nm pumping can output hundreds of millijoules hundred picoseconds to nanosecond 694nm output.

The above embodiments are preferred embodiments of the present invention, but the embodiments of the present invention are not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be equivalent replacement modes, and all are included in the scope of the present invention.

In the description of the present invention, it is to be understood that the terms indicating orientation or positional relationship are based on the orientation or positional relationship shown in the drawings, and are only for convenience of description and simplification of description, and do not indicate or imply that the equipment or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.

Claims

1. The large-energy multi-wavelength pulse width adjustable laser is characterized by comprising a pumping source (1), a collimating lens (2), a focusing lens (3), a Nd YAG + Cr YAG bonded crystal (4), a guide rail a (5), a half-wave plate a (6), an isolator (7), a shaping lens a (8), a 45-degree total reflection mirror a (9), a half-wave plate b (10), a 45-degree total reflection mirror b (11), a Nd YAG crystal a (12), a shaping lens b (13), a xenon lamp (14), a 45-degree total reflection mirror c (15), a 45-degree total reflection mirror d (16), a Nd YAG crystal b (17), a KTP frequency doubling crystal (18), a spectroscope (19), a guide rail b (20), a 45-degree total reflection mirror e (21), a half-wave plate c (22), a prism a (23), a hand tool (24), a half-wave plate d (25), a prism b (26), a shaping mirror a (27), a shaping mirror b (28), and a half-wave plate (28), Emerald crystal a (29), 45-degree total reflection mirror f (30), shaping mirror c (31), shaping mirror d (32) and ruby crystal (33).

2. The large-energy multi-wavelength pulse width tunable laser according to claim 1, wherein the collimating lens (2), the focusing lens (3), the Nd: YAG + Cr: YAG bonded crystal (4), the half-wave plate a (6), the isolator (7), the shaping lens a (8) and the 45-degree total reflection mirror a (9) are sequentially arranged in the light irradiation direction of the pump source (1), wherein the Nd: YAG + Cr: YAG bonded crystal (4) is movably arranged between the focusing lens (3) and the half-wave plate a (6) through a guide rail a (5).

3. The large-energy multi-wavelength pulse width tunable laser device according to claim 2, wherein the half-wave plate b (10) and the 45-degree total reflection mirror b (11) are sequentially arranged in the reflection direction of the 45-degree total reflection mirror a (9).

4. The large-energy multi-wavelength pulse width tunable laser device according to claim 3, wherein the Nd: YAG crystal a (12), the shaping lens b (13) and the 45-degree total reflection mirror c (15) are sequentially arranged in the reflection direction of the 45-degree total reflection mirror b (11), and the 45-degree total reflection mirror d (16) is arranged in the reflection direction of the 45-degree total reflection mirror c (15).

5. The large-energy multi-wavelength pulse width tunable laser device according to claim 4, wherein the Nd: YAG crystal b (17), the KTP frequency doubling crystal (18), the beam splitter (19) and the 45 degree total reflection mirror e (21) are sequentially arranged in the reflection direction of the 45 degree total reflection mirror d (16), wherein the KTP frequency doubling crystal (18) and the beam splitter (19) are movably arranged between the Nd: YAG crystal b (17) and the 45 degree total reflection mirror e (21) through a guide rail b (20).

6. The large-energy multi-wavelength pulse width tunable laser device according to claim 5, wherein the half-wave plate c (22), the prism a (23), the half-wave plate d (25), the prism b (26) and the 45-degree total reflection mirror f (30) are sequentially arranged in the reflection direction of the 45-degree total reflection mirror e (21), wherein the light refracted by the prism a (23) is emitted through the hand tool (24).

7. The large-energy multi-wavelength pulse width tunable laser device according to claim 6, wherein the shaping mirror a (27), the shaping mirror b (28) and the emerald crystal a (29) are sequentially disposed in the refraction direction of the prism b (26).

8. The large-energy multi-wavelength pulse width tunable laser device according to claim 6, wherein the shaping mirror c (31), the shaping mirror d (32) and the ruby crystal (33) are sequentially arranged in the reflection direction of the (45) degree total reflection mirror f (30).