CN217086596U - Novel photocell device and ultraviolet photoelectric detector - Google Patents
Novel photocell device and ultraviolet photoelectric detector Download PDFInfo
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- CN217086596U CN217086596U CN202122723455.4U CN202122723455U CN217086596U CN 217086596 U CN217086596 U CN 217086596U CN 202122723455 U CN202122723455 U CN 202122723455U CN 217086596 U CN217086596 U CN 217086596U
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Abstract
The application discloses novel photocell device and ultraviolet photoelectric detector. The novel photovoltaic device comprises: the heat dissipation structure is arranged at the bottom of the insulating substrate and used for quickly dissipating illumination heat energy; the photoelectric structure is arranged on the top of the insulating substrate and used for generating a photoelectric effect; the electrode group is in contact with the photoelectric structure and is used for transmitting the electric signal generated by the photoelectric structure to receiving equipment; the single-layer photoelectric structure replaces at least two layers of semiconductor PN junctions to generate a photoelectric effect, so that the photoelectric cell can simultaneously realize high polarization sensitivity and simplify the structure; and the light and heat energy is quickly dissipated through the heat dissipation structure, so that the service life of the photocell is prolonged. The photoelectric cell solves the technical problems of low polarization sensitivity, poor photoresponse characteristic, complex structure and short service life of the photoelectric cell.
Description
Technical Field
The application relates to the field of photoelectric devices, in particular to a novel photoelectric cell device and an ultraviolet photoelectric detector.
Background
The inventor finds that at least two layers of semiconductor PN junctions are adopted, so that the photocell cannot simultaneously realize good photoresponse characteristics, high polarization sensitivity and simple structure; and the heat energy of the illumination point is difficult to dissipate, thereby causing the service life of the photocell to be shortened.
Aiming at the problems of low polarization sensitivity, poor photoresponse characteristic, complex structure and short service life of the photocell in the related technology, no effective solution is provided at present.
Disclosure of Invention
The main objective of the present application is to provide a novel photovoltaic cell device and a uv photodetector, so as to solve the problems of low polarization sensitivity of the photovoltaic cell, poor photoresponse characteristics, complex structure and short service life.
To achieve the above object, according to one aspect of the present application, there is provided a novel photovoltaic device.
A novel photovoltaic device according to the present application comprises: the heat dissipation structure is arranged at the bottom of the insulating substrate and used for quickly dissipating illumination heat energy; the photoelectric structure is arranged on the top of the insulating substrate and used for generating a photoelectric effect; and the electrode group is in contact with the photoelectric structure and is used for transmitting the electric signal generated by the photoelectric structure to receiving equipment.
Further, the electrode group includes: the photoelectric structure comprises a first electrode and a second electrode, wherein the first electrode and the second electrode are respectively arranged at the positions, close to two ends, of the top of the photoelectric structure, or at the positions, close to two ends, of the inside of the insulating substrate and extending out of the top of the insulating substrate.
Further, the heat dissipation structure includes: the phase-change material heat-conducting module comprises a heat-conducting film made of a high heat-conducting material and a heat-absorbing layer provided with a containing cavity for containing a phase-change material, wherein the heat-conducting film is arranged under an insulating substrate, and the heat-absorbing layer is arranged under the heat-conducting film.
Further, the photoelectric structure is a vertical heterostructure.
Further, the method also comprises the following steps: an anti-reflective film disposed on top of the photovoltaic structure.
Further, the vertical heterostructure is MgCl 2 /ZnBr 2 Vertical heterostructures or MgBr 2 /CdCl 2 A vertical heterostructure.
Further, the thickness of the photoelectric structure is less than 50 nm.
Further, the insulating substrate is an insulating material layer made of PI, PEN, PET, glass or silicon.
Further, the anti-reflection film is made of SiO 2 、MgF 2 、Si 3 N 4 And an anti-reflection material layer.
In order to achieve the above object, according to another aspect of the present application, there is provided an ultraviolet photodetector.
The ultraviolet photodetector according to the present application includes: a novel photovoltaic device as claimed in any one of the preceding claims.
In the embodiment of the application, a mode of combining a photoelectric structure and a heat dissipation structure is adopted, and the heat dissipation structure is arranged at the bottom of an insulating substrate and used for quickly dissipating illumination heat energy; the photoelectric structure is arranged on the top of the insulating substrate and used for generating a photoelectric effect; the electrode group is in contact with the photoelectric structure and is used for transmitting the electric signal generated by the photoelectric structure to receiving equipment; the purpose that a single-layer photoelectric structure replaces at least two layers of semiconductor PN junctions to generate a photoelectric effect and the illumination heat energy is rapidly dissipated through a heat dissipation structure is achieved, so that the photocell can achieve high polarization sensitivity and good photoresponse characteristics, the structure is simplified, the service life of the photocell is prolonged, and the technical problems of low polarization sensitivity, complex structure and short service life of the photocell are solved.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this application, serve to provide a further understanding of the application and to enable other features, objects, and advantages of the application to be more apparent. The drawings and their description illustrate the embodiments of the invention and do not limit it. In the drawings:
FIG. 1 is a schematic diagram of the structure of a novel photovoltaic device according to a preferred embodiment of the present application;
FIG. 2 is a schematic diagram of the structure of a novel photovoltaic device according to another preferred embodiment of the present application;
figure 3 is a schematic diagram of the structure of a novel photovoltaic device according to yet another preferred embodiment of the present application.
Reference numerals
1. An insulating substrate; 2. a photovoltaic structure; 3. an electrode group; 4. a first electrode; 5. a second electrode; 6. an antireflection film; 7. a heat dissipation mechanism; 8. a heat conductive film; 9. a heat absorbing layer.
Detailed Description
In order to make the technical solutions better understood by those skilled in the art, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only partial embodiments of the present application, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It should be noted that the terms "first," "second," and the like in the description and claims of this application and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It should be understood that the data so used may be interchanged under appropriate circumstances such that embodiments of the application described herein may be used. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
In this application, the terms "upper", "lower", "left", "right", "front", "rear", "top", "bottom", "inner", "outer", "middle", "vertical", "horizontal", "lateral", "longitudinal", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings. These terms are used primarily to better describe the invention and its embodiments, and are not intended to limit the indicated devices, elements or components to a particular orientation or to be constructed and operated in a particular orientation.
Moreover, some of the above terms may be used to indicate other meanings besides the orientation or positional relationship, for example, the term "on" may also be used to indicate some kind of attachment or connection relationship in some cases. The specific meaning of these terms in the present invention can be understood by those of ordinary skill in the art as appropriate.
Furthermore, the terms "mounted," "disposed," "provided," "connected," and "coupled" are to be construed broadly. For example, it may be a fixed connection, a removable connection, or a unitary construction; can be a mechanical connection, or an electrical connection; may be directly connected, or indirectly connected through intervening media, or may be in internal communication between two devices, elements or components. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The present application will be described in detail below with reference to the embodiments with reference to the attached drawings.
As shown in fig. 1-3, the present application relates to a novel photovoltaic device comprising: the heat dissipation structure is arranged at the bottom of the insulating substrate 1 and used for rapidly dissipating illumination heat energy; a photoelectric structure 2 arranged on top of the insulating substrate 1 for generating photoelectric effect; and the electrode group 3 is in contact with the photoelectric structure 2 and is used for transmitting the electric signal generated by the photoelectric structure 2 to a receiving device.
Specifically, the insulating substrate 1 has an insulating function; preferably, the insulating substrate 1 is an insulating material layer made of PI, PEN, PET, glass or silicon; the insulating substrate 1 can be made of any one of the above materials, and PI, PEN, PET, glass or silicon has a good insulating effect. The heat dissipation mechanism 7 has the function of quickly dissipating illumination heat energy; in this embodiment, preferably, the heat dissipation structure includes: the phase change material heat insulation structure comprises a heat conduction film 8 made of high heat conduction materials and a heat absorption layer 9 provided with an accommodating cavity for accommodating a phase change material, wherein the heat conduction film 8 is arranged below an insulation substrate 1, and the heat absorption layer 9 is arranged below the heat conduction film 8; the heat conducting film 8 absorbs heat to enable the whole heat conducting film 8 to reach a high temperature quickly, then heat energy is transferred to the heat absorbing layer 9 through the heat conducting film 8, the phase change material in the heat absorbing layer 9 can absorb heat and store energy quickly under large-area contact, and finally the purpose of quickly emitting illumination heat energy is achieved, so that the technical effect of prolonging the service life of the photocell is achieved; further preferably, in order to achieve good heat conduction, the heat conducting film 8 is connected with the insulating substrate 1, and the heat absorbing layer 9 is connected with the heat conducting film 8 by using heat conducting glue. The photoelectric structure 2 has the function of generating a photoelectric effect; in this embodiment, preferably, the optoelectronic structure 2 is a vertical heterostructure, and more preferably, the vertical heterostructure is MgCl 2 /ZnBr 2 Vertical heterostructures or MgBr 2 /CdCl 2 A vertical heterostructure; preferably, the thickness of the photovoltaic structure 2 is less than 50 nm; only one layer of MgCl of less than 50nm is required 2 /ZnBr 2 Vertical heterostructures or MgBr 2 /CdCl 2 The vertical heterostructure can replace at least two layers of semiconductor PN junctions to generate a photoelectric effect, the structure is simplified, good optical response characteristics are achieved, and the optical response current has sine or cosine response characteristics to the polarized light phase angle. And can realize high polarization sensitivity and extinction ratioTo reach 280. The electrode group 3 has a function of outputting electromotive force generated by photoelectric effect; in this embodiment, it is preferable that the electrode group 3 and MgBr are present 2 /CdCl 2 The vertical heterojunction has physical contact to ensure an electrical connection relationship therebetween, thereby ensuring that an electromotive force (electrical signal) can be normally output to a receiving device through the electrode group 3.
From the above description, it can be seen that the following technical effects are achieved by the present application:
in the embodiment of the application, a mode of combining a photoelectric structure 2 and a heat dissipation structure is adopted, and the heat dissipation structure is arranged at the bottom of an insulating substrate 1 through the insulating substrate 1 and is used for quickly dissipating illumination heat energy; a photoelectric structure 2 arranged on top of the insulating substrate 1 for generating photoelectric effect; an electrode group 3, in contact with the optoelectronic structure 2, for transmitting the electrical signal generated by the optoelectronic structure 2 to a receiving device; the purpose that the single-layer photoelectric structure 2 replaces at least two layers of semiconductor PN junctions to generate a photoelectric effect and the illumination heat energy is rapidly dissipated through the heat dissipation structure is achieved, so that the photocell can achieve high polarization sensitivity, the structure is simplified, the service life of the photocell is prolonged, and the technical problems of low polarization sensitivity, poor photoresponse characteristics, complex structure and short service life of the photocell are solved.
Preferably, the electrode group 3 includes: the first electrode 4 and the second electrode 5 are respectively arranged at positions, close to two ends, of the top of the photoelectric structure 2, or at positions, close to two ends, inside the insulating substrate 1, and extending out of the top of the insulating substrate. The first electrode 4 and the second electrode 5 may be disposed at positions close to the two ends of the top of the optoelectronic structure 2, or at positions close to the two ends of the inside of the insulating substrate 1 and protruding from the top of the insulating substrate, and regardless of the positions, as long as the effect of the photo-generated current is ensured to generate electromotive force therebetween, that is, the first electrode 4, the second electrode 5 and MgBr must be ensured 2 /CdCl 2 The vertical heterogeneous bodies have an electrical connection relationship.
Preferably, the method further comprises the following steps: is arranged at the MgBr 2 /CdCl 2 An antireflection film 6 on top of the vertical heterojunction. Preferably, the antireflection film 6 is made of SiO 2 、MgF 2 、Si 3 N 4 And an anti-reflection material layer. More light can participate in conversion through the anti-reflection film 6, so that the conversion efficiency of light energy is improved; on the other hand, the photoelectric structure 2 can be protected from oxidation. Light is incident to the photoelectric structure 2 through the anti-reflection film 6, an electromotive force is generated between the first electrode 4 and the second electrode 5 due to a photovoltaic effect, and the positive and negative polarities can be changed by the phase of the polarized light.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (9)
1. A novel photovoltaic device, comprising: the heat dissipation structure is arranged at the bottom of the insulating substrate and used for quickly dissipating illumination heat energy; the photoelectric structure is arranged on the top of the insulating substrate and used for generating a photoelectric effect; and the electrode group is in contact with the photoelectric structure and is used for transmitting the electric signal generated by the photoelectric structure to receiving equipment.
2. The photovoltaic device as claimed in claim 1, wherein the set of electrodes comprises: the photoelectric structure comprises a first electrode and a second electrode, wherein the first electrode and the second electrode are respectively arranged at the positions, close to two ends, of the top of the photoelectric structure, or at the positions, close to two ends, of the inside of the insulating substrate and extending out of the top of the insulating substrate.
3. The novel photovoltaic device as claimed in claim 1, wherein the heat dissipation structure comprises: the heat-conducting film is made of high heat-conducting materials, and the heat-absorbing layer is provided with an accommodating cavity for accommodating the phase-change materials, the heat-conducting film is arranged below the insulating substrate, and the heat-absorbing layer is arranged below the heat-conducting film.
4. The photovoltaic device as claimed in claim 1, wherein the photovoltaic structure is a vertical heterostructure.
5. The photovoltaic device of claim 1, further comprising: an anti-reflective film disposed on top of the photovoltaic structure.
6. The photovoltaic device according to claim 4, characterized in that said vertical heterostructure is MgCl 2 /ZnBr 2 Vertical heterostructures or MgBr 2 /CdCl 2 A vertical heterostructure.
7. The novel photovoltaic device of claim 1, wherein the photovoltaic structure has a thickness of less than 50 nm.
8. The photovoltaic device according to claim 1, characterized in that said insulating substrate is a layer of insulating material consisting of PI, PEN, PET, glass or silicon.
9. An ultraviolet photodetector, comprising: a novel photovoltaic device as claimed in any one of claims 1 to 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122723455.4U CN217086596U (en) | 2021-11-08 | 2021-11-08 | Novel photocell device and ultraviolet photoelectric detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122723455.4U CN217086596U (en) | 2021-11-08 | 2021-11-08 | Novel photocell device and ultraviolet photoelectric detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN217086596U true CN217086596U (en) | 2022-07-29 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202122723455.4U Active CN217086596U (en) | 2021-11-08 | 2021-11-08 | Novel photocell device and ultraviolet photoelectric detector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN217086596U (en) |
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2021
- 2021-11-08 CN CN202122723455.4U patent/CN217086596U/en active Active
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