CN217060513U - Silicon carbide semiconductor detector for measuring strong gamma radiation field after accident - Google Patents
Silicon carbide semiconductor detector for measuring strong gamma radiation field after accident Download PDFInfo
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- CN217060513U CN217060513U CN202123407008.4U CN202123407008U CN217060513U CN 217060513 U CN217060513 U CN 217060513U CN 202123407008 U CN202123407008 U CN 202123407008U CN 217060513 U CN217060513 U CN 217060513U
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Abstract
The utility model relates to a nuclear power overhauls technical field, specifically discloses a carborundum semiconductor detector for strong gamma radiation field measurement after the accident, is equipped with PIN carborundum detection unit in sealed protective housing's inside, supports fixedly PIN carborundum detection unit through insulating support component; the PIN silicon carbide detection unit is used for measuring radiation dose in the region, generating an electric signal proportional to the radiation dose, leading out the electric signal through the collector wire core, and packaging the electric signal into a hard armored cable to be led out of the sealed protective shell; and a high-voltage pole of the PIN silicon carbide detection unit is also led out through the wire core and is packaged into another hard armored cable to be led out of the sealed protective shell. The utility model discloses the detector has better environment suitability, can work under normal radiation level, can normally work under high temperature, high humidity, high pressure and superelevation radiation dose rate again, can be used to gamma ray ionizing radiation detection fields such as strong gamma radiation field measurement under the accident condition.
Description
Technical Field
The utility model belongs to the technical field of the nuclear power overhauls, concretely relates to a carborundum semiconductor detector that is used for strong gamma radiation field measurement behind the accident.
Background
The semiconductor detector has the advantages of high detection efficiency, good energy resolution and the like, but can only be stored and operated at normal temperature or low temperature, and the detection performance is gradually deteriorated due to radiation damage, so the semiconductor detector cannot be applied to extreme environments such as high temperature, strong radiation fields and the like.
In the nineties of the last century, SiC (silicon carbide) technology has developed rapidly, and SiC materials have begun to be spotlighted and studied because of their superior physical properties. SiC, as a third-generation semiconductor material, has a wide band gap of 2.6-3.2 eV and a 2.0X 10 band gap 7 cm·s -1 High saturated electron drift velocity of 2.3MV cm -1 High breakdown field of 3.4 W.cm -1 ～4.9W·cm -1 The material has high thermal conductivity and the like, and has lower dielectric constant, and the properties determine that the material has great application potential in the aspects of high temperature, high frequency, high power semiconductor devices, radiation resistance, digital integrated circuits and the like.
The wide band gap of the SiC material determines that the device can work at a high temperature of more than 500 ℃, the dark current is still very low at the high temperature, the sensitivity is high, and the atomic critical displacement energy is large, so that the SiC device has good radiation resistance, and particularly becomes the only choice under the condition of coexistence of high temperature and radiation.
The semiconductor detector formed by the PIN silicon carbide device has the advantages of small dark current, good signal-to-noise ratio, good environmental applicability, simple structure, small volume, low working voltage, good linearity and good response to charged particles, gamma rays, X rays and neutrons.
At present, detectors for monitoring gamma radiation dose rate in nuclear reactor accidents and after accidents all adopt inflatable ionization chamber detectors, and are complex in structure, large in size and high in cost. It is therefore desirable to design a silicon carbide semiconductor detector for post-accident measurement of strong gamma radiation fields to address the above problems.
Disclosure of Invention
An object of the utility model is to provide a be used for strong gamma radiation field measuring carborundum semiconductor detector behind the accident, can satisfy insulating nature, high temperature resistance and the resistant irradiation characteristic under the serious accident, can work under high temperature high-pressure environment for a long time.
The technical scheme of the utility model as follows:
a silicon carbide semiconductor detector for post-accident strong gamma radiation field measurement comprises a sealed protective shell;
a PIN silicon carbide detection unit is arranged in the sealed protective shell, and is supported and fixed through an insulating support part;
the PIN silicon carbide detection unit is used for measuring radiation dose in a region, generating an electric signal proportional to the radiation dose, leading out the electric signal through the collector wire core, and packaging the electric signal into a hard armored cable to be led out of the sealed protective shell; the high-voltage pole of the PIN silicon carbide detection unit is also led out through the wire core and is packaged into another hard armored cable to be led out of the sealed protective shell; and then the electric signal is transmitted to a subsequent processing circuit through the armored cable, and the armored cable provides a bias power supply for the PIN silicon carbide detection unit.
The number of the insulating support parts is three, and one end of each insulating support part is respectively attached and fastened with the two side walls and the bottom surface of the PIN silicon carbide detection unit.
The PIN carborundum detection unit is packaged into a cylinder.
One end of each of the three insulating support parts is respectively attached and fastened to the symmetrical outer wall and the bottom surface of the PIN silicon carbide detection unit on two sides;
arc-shaped notches are respectively machined at one ends of the two insulating support parts, which are in contact with symmetrical outer walls on two sides of the PIN silicon carbide detection unit, and are attached to the arc-shaped side walls of the PIN silicon carbide detection unit.
The insulating support component is of a circular ring-shaped structure.
The insulation supporting component and the PIN silicon carbide detection unit are fixed through bonding.
The sealing protective shell is in a sealing cylinder shape.
The exterior of the armored cable is protected by a hard cable protection shell.
And welding and sealing the connection part of the armored cable and the sealed protective shell.
And the electric signal is transmitted to a subsequent processing circuit through the armored cable and is amplified by a high-input-impedance and wide-range preamplifier.
The beneficial effects of the utility model reside in that:
(1) the utility model discloses the detector has better environment suitability, and simple structure, small, the operating voltage is low, the linearity is good, the dark current is little, convenient to use, can work under normal radiation level, can normally work under high temperature, high humidity, high pressure and superelevation radiation dose rate again, can be used to gamma ray ionizing radiation detection fields such as strong gamma radiation field measurement under the accident condition.
(2) The utility model discloses the detector is owing to adopted stainless steel armour cable transmission signal, and cable insulation resistance is big, and the leakage current is little, and the signal attenuation is little, and the interference killing feature is strong, consequently can amplify the processing again after the better region of environment condition outside the containment with the current signal transmission of detector output.
(3) The utility model discloses the detector adopts stainless steel cylindrical shell, adopts metal-pottery to melt and seals welding process, can satisfy insulating nature, high temperature resistance and the resistant irradiation characteristic under the serious accident, can work under high temperature high pressure environment for a long time.
(4) The utility model discloses the PIN carborundum that the detector adopted is the solid device, and density is about 1000 times gaseous, for gaseous formula ionization chamber detector, and is bulky for reducing.
(5) The utility model discloses PIN carborundum that the detector adopted is as gamma ray measuring detection device, and its operating voltage generally is below 100V, has avoided the problem of special nuclear detector high voltage in the work to the instrument design has been simplified, and the environmental suitability of instrument is improved.
(6) The utility model discloses the signal of detector output adopts high input impedance, wide range preamplifier to enlarge the processing after the lower region of radiation dose rate is exported through the inorganic armoured cable of stainless steel, for example, charge sensitive preamplifier or electrometer etc to after the scale, can be with the current signal conversion of detector output for the radiation dose rate.
Drawings
FIG. 1 is a schematic view of a silicon carbide semiconductor detector;
fig. 2 is a schematic diagram of detector signal processing.
In the figure: 1. sealing the protective housing; 2. an insulating support member; a PIN silicon carbide detection unit; 4. an armored cable.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
As shown in fig. 1, a silicon carbide semiconductor detector for measuring a strong gamma radiation field after an accident adopts a stainless steel corrosion-resistant and high-strength metal material as a sealing protective shell 1, and the sealing protective shell 1 is in a sealing cylinder shape.
Sealed protecting sheathing 1's inside is equipped with PIN carborundum detection unit 3, supports fixedly PIN carborundum detection unit 3 through insulating support component 2.
The insulation support parts 2 are of circular ring structures, and are three in number and are respectively attached and fastened to the two symmetrical outer walls and the bottom surface of the PIN silicon carbide detection unit 3. Wherein arc-shaped notches are respectively processed at the ends of the two insulating support parts 2, which are in contact with the symmetrical outer walls at the two sides of the PIN silicon carbide detection unit 3, and are attached to the side walls of the PIN silicon carbide detection unit 3. The insulating support part 2 and the PIN silicon carbide detection unit 3 are fixed through bonding.
The PIN carborundum detection unit 3 is packaged into a cylinder. The PIN silicon carbide detection unit 3 is used for measuring the radiation dose in the area and generating an electric signal proportional to the radiation dose. This signal of telecommunication is drawn forth through the collecting electrode sinle silk, encapsulates into stereoplasm armoured cable 4 and draws out sealed protective housing 1, and PIN carborundum detection unit 3's high-voltage pole also draws forth through the sinle silk, encapsulates into another way stereoplasm armoured cable 4 and draws out sealed protective housing 1, and then transmits the signal of telecommunication to subsequent processing circuit through armoured cable 4, and armoured cable 4 provides the bias voltage power for PIN carborundum detection unit 3 simultaneously.
The exterior of the armored cable 4 is protected by a hard cable protective shell, and the joint of the armored cable 4 and the sealed protective shell 1 is welded and sealed.
As shown in the embodiment of fig. 2, the charge sensitive preamplifier of the subsequent processing circuit is composed of an input stage, an amplification stage and a feedback loop, gamma rays irradiate the PIN silicon carbide D1, the generated charges are converted into voltage pulse signals, and the voltage pulses are sent to a counter, so that the purpose of measurement is achieved. The positive pole of the PIN silicon carbide D1 is grounded, and the negative pole is connected with the input end of the charge sensitive preamplifier of the measuring unit and is connected with the positive pole of the bias power supply. The charge sensitive preamplifier includes a field effect transistor T1 and an amplifier U1, a grid G of the field effect transistor T1 is connected with a cathode of a D1 through an alternating current coupling capacitor C1, a drain D of the field effect transistor T1 is connected with an anode of a power supply through a drain resistor R1, a source S of the field effect transistor T1 is grounded, an inverting input end of the amplifier U1 is grounded, one end of a feedback resistor R2 and one end of a feedback capacitor C2 are connected with an output end OUT of an amplifier U1, and the other end of the feedback resistor R2 and the other end of the feedback capacitor C2 are connected with a grid of a field effect transistor T1.
D1 is PIN SiC, a 4H PIN SiC diode can be used with its anode connected to ground and its cathode directly connected to the input to reduce the distributed capacitance, and a bias supply provides a reverse bias voltage to D1.
The input stage T1 is a field effect transistor common source amplifier, and a low-noise, high-transconductance field effect transistor is used, for example, an N-channel junction 2N4416 field effect transistor may be used, the gate G is connected to the output terminal (OUT terminal) of the amplifier U1 through a resistor R2, the source S is grounded, and the drain D is connected to the positive input terminal of the amplifier U1.
The amplifier U1 employs a high gain, wide band operational amplifier with low output impedance, high open loop gain, and ground inverting input, such as with an integrated circuit OPA 655.
The feedback loop is composed of a capacitor C2 and a resistor R2, a feedback capacitor C2 plays a negative feedback role, the temperature stability of the capacitor C2 is good, and a feedback resistor R2 is a bleeder resistor.
The basic principles, main features and advantages of the present invention have been shown and described, it will be obvious to those skilled in the art that the present invention is not limited to the details of the foregoing exemplary embodiments, but rather can be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present specification describes embodiments, not every embodiment includes only a single embodiment, and such description is for clarity purposes only, and it is to be understood that all embodiments may be combined as appropriate by one of ordinary skill in the art to form other embodiments as will be apparent to those of skill in the art from the description herein.
Claims (10)
1. A silicon carbide semiconductor detector for post-accident strong gamma radiation field measurement, characterized by: comprises a sealed protective shell (1);
a PIN silicon carbide detection unit (3) is arranged in the sealed protective shell (1), and the PIN silicon carbide detection unit (3) is supported and fixed through an insulating support part (2);
the PIN silicon carbide detection unit (3) is used for measuring the radiation dose in the region, generating an electric signal proportional to the radiation dose, leading out the electric signal through a collector wire core, and packaging the electric signal into a hard armored cable (4) to lead out the sealed protective shell (1); the high-voltage pole of the PIN silicon carbide detection unit (3) is also led out through the wire core and is packaged into another hard armored cable (4) which is led out of the sealed protective shell (1); and then the electric signal is transmitted to a subsequent processing circuit through the armored cable (4), and meanwhile, the armored cable (4) provides a bias power supply for the PIN silicon carbide detection unit (3).
2. A silicon carbide semiconductor detector for post-incident strong gamma radiation field measurements as claimed in claim 1 wherein: the number of the insulating support parts (2) is three, and one end of each insulating support part (2) is respectively attached and fastened with the two side walls and the bottom surface of the PIN silicon carbide detection unit (3).
3. A silicon carbide semiconductor detector for post-incident strong gamma radiation field measurements as claimed in claim 2 wherein: the PIN carborundum detection unit (3) is packaged into a cylinder.
4. A silicon carbide semiconductor detector for post-incident strong gamma radiation field measurements as claimed in claim 3 wherein: one ends of the three insulating support components (2) are respectively attached and fastened with the symmetrical outer walls and the bottom surfaces of the two sides of the PIN silicon carbide detection unit (3);
arc-shaped notches are respectively machined at one ends of the two insulating support parts (2) which are in contact with the symmetrical outer walls of the two sides of the PIN silicon carbide detection unit (3), and are attached to the arc-shaped side walls of the PIN silicon carbide detection unit (3).
5. A silicon carbide semiconductor detector for post-incident strong gamma radiation field measurement as claimed in claim 4 wherein: the insulating support component (2) is of a circular ring-shaped structure.
6. A silicon carbide semiconductor detector for post-incident strong gamma radiation field measurements as claimed in claim 1 wherein: the insulation supporting part (2) and the PIN silicon carbide detection unit (3) are fixed through bonding.
7. A silicon carbide semiconductor detector for post-incident strong gamma radiation field measurement as claimed in claim 1 wherein: the sealed protective shell (1) is in a sealed cylinder shape.
8. A silicon carbide semiconductor detector for post-incident strong gamma radiation field measurement as claimed in claim 1 wherein: the exterior of the armored cable (4) is protected by a hard cable protection shell.
9. A silicon carbide semiconductor detector for post-incident strong gamma radiation field measurement as claimed in claim 8 wherein: and welding and sealing the connection part of the armored cable (4) and the sealed protective shell (1).
10. A silicon carbide semiconductor detector for post-incident strong gamma radiation field measurement as claimed in claim 1 wherein: and the electric signals are transmitted to a subsequent processing circuit through the armored cable (4) and are amplified by a high-input-impedance and wide-range preamplifier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123407008.4U CN217060513U (en) | 2021-12-31 | 2021-12-31 | Silicon carbide semiconductor detector for measuring strong gamma radiation field after accident |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123407008.4U CN217060513U (en) | 2021-12-31 | 2021-12-31 | Silicon carbide semiconductor detector for measuring strong gamma radiation field after accident |
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| Publication Number | Publication Date |
|---|---|
| CN217060513U true CN217060513U (en) | 2022-07-26 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202123407008.4U Active CN217060513U (en) | 2021-12-31 | 2021-12-31 | Silicon carbide semiconductor detector for measuring strong gamma radiation field after accident |
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