CN217009130U

CN217009130U - Semiconductor processing equipment

Info

Publication number: CN217009130U
Application number: CN202220241848.3U
Authority: CN
Inventors: 杨钦淞; 郭雪娇
Original assignee: Beijing Naura Microelectronics Equipment Co Ltd
Current assignee: Beijing Naura Microelectronics Equipment Co Ltd
Priority date: 2022-01-28
Filing date: 2022-01-28
Publication date: 2022-07-19
Anticipated expiration: 2032-01-28

Abstract

The utility model discloses semiconductor process equipment, which comprises a process chamber, a chamber heating assembly, a cooling pipeline, a process gas input channel and a gas heating device, wherein: the chamber heating assembly is arranged outside the process chamber; the cooling pipeline is arranged outside the process chamber so as to cool the chamber heating assembly; the process gas input channel is communicated with the process chamber; the gas heating device is communicated with the outlet end of the cooling pipeline, the process gas input channel is arranged in the gas heating device, the cooling pipeline is used for enabling introduced fluid media to enter the gas heating device after heat exchange is carried out on the fluid media and the cavity heating assembly, and the fluid media heat the process gas in the process gas input channel. The technical scheme can solve the problem that a high-temperature material source in the process chamber is easy to condense and adhere to the inner wall of the process chamber when meeting process gas with lower temperature, so that the process environment in the process chamber can be influenced.

Description

Semiconductor processing equipment

Technical Field

The utility model relates to the technical field of semiconductor processing, in particular to semiconductor process equipment.

Background

In the semiconductor processing equipment, when a semiconductor sheet is prepared, the preparation of the semiconductor sheet by a physical vapor transport method has become one of the mainstream methods. The semiconductor processing equipment comprises a process chamber, wherein the process chamber is in a high-temperature environment and forms a temperature gradient, the process chamber forms a cold end at a position with lower temperature, a high-temperature material source for semiconductor sheet growth is arranged in the process chamber, and the high-temperature material source is crystallized at the cold end to realize the growth of the semiconductor sheet. When semiconductor processing equipment is used for preparing a semiconductor sheet, process gas required by the process needs to be introduced into a process chamber. In the related art, since the temperature of the process gas is low, when the process gas is introduced into the process chamber, the high-temperature material source in the process chamber is likely to be condensed and attached to the inner wall of the process chamber when encountering the process gas with low temperature, thereby affecting the process environment in the process chamber.

SUMMERY OF THE UTILITY MODEL

The utility model discloses semiconductor process equipment, which aims to solve the problem that a high-temperature material source in a process chamber is easy to condense and adhere to the inner wall of the process chamber when meeting process gas with lower temperature, so that the process environment in the process chamber is influenced.

In order to solve the technical problem, the utility model is realized as follows:

the application discloses semiconductor process equipment, including process chamber, cavity heating element, cooling line, process gas input channel and gas heating device, wherein:

the chamber heating assembly is arranged outside the process chamber and used for heating the process chamber;

the cooling pipeline is arranged outside the process chamber and used for introducing a fluid medium so as to cool the chamber heating assembly;

the process gas input channel is communicated with the process chamber and is used for introducing process gas into the process chamber;

the gas heating device is communicated with the outlet end of the cooling pipeline, the process gas input channel is arranged in the gas heating device, the cooling pipeline is used for enabling the introduced fluid medium to enter the gas heating device after the heat exchange is carried out between the introduced fluid medium and the cavity heating assembly, and the fluid medium heats the process gas in the process gas input channel.

The technical scheme adopted by the utility model can achieve the following technical effects:

the semiconductor process equipment disclosed by the embodiment of the application is characterized in that a cavity heating assembly and a cooling pipeline are arranged outside a process cavity, a process gas input channel is communicated with the process cavity, the process gas input channel is arranged in a gas heating device, the cavity heating assembly heats the process cavity, a fluid medium can be introduced into the cooling pipeline to cool the cavity heating assembly, the temperature of the fluid medium is increased after the fluid medium exchanges heat with the cavity heating assembly, the fluid medium with the increased temperature enters the gas heating device through an outlet end of the cooling pipeline, the fluid medium heats the process gas in the process gas input channel in the gas heating device, the heated process gas enters the process cavity, and a high-temperature material source can be prevented from being condensed on the inner wall and an observation window of the process cavity when encountering the process gas with lower temperature, thereby affecting the process environment of the process chamber; the fluid medium in the cooling pipeline is utilized to heat the process gas after exchanging heat with the chamber heating assembly, so that the fluid medium is utilized in multiple ways, and the overall economy and the design rationality of the semiconductor process equipment are improved.

Drawings

FIG. 1 is a schematic diagram of a first semiconductor processing apparatus according to an embodiment of the present invention;

FIG. 2 is a schematic diagram of a second semiconductor processing apparatus according to an embodiment of the present disclosure;

fig. 3 is a schematic structural diagram of a gas heating apparatus according to an embodiment of the present invention.

Description of reference numerals:

100-a process chamber,

200-process gas feed channel, 210-first gas channel, 220-second gas channel,

300-gas heating device, 310-heating box body, 311-fluid inlet, 312-fluid outlet,

400-a return pipeline,

500-induction coil,

600-observation window,

700-a temperature measuring instrument,

800-exhaust channel,

900-gas path box, 910-flow controller, 920-on-off valve, 930-discharge pipeline.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the specific embodiments of the present invention and the accompanying drawings. It is to be understood that the described embodiments are merely a few embodiments of the utility model, and not all embodiments. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention.

The technical solutions disclosed in the embodiments of the present invention are described in detail below with reference to the accompanying drawings.

Referring to fig. 1 to 3, an embodiment of the present invention discloses a semiconductor processing apparatus including a process chamber 100, a chamber heating assembly, a cooling line, a process gas inlet channel 200, and a gas heating device 300, wherein:

the chamber heating assembly is disposed outside the process chamber 100 for heating the process chamber 100.

The cooling line is disposed outside the process chamber 100 and is used to introduce a fluid medium to cool the chamber heating assembly. When the chamber heating assembly heats the process chamber 100, the chamber heating assembly also needs to keep a certain temperature so as not to influence the working performance of the chamber heating assembly, the temperature of the fluid medium introduced by the cooling pipeline is relatively low, the fluid medium exchanges heat with the chamber heating assembly so as to cool the chamber heating assembly, and meanwhile, the temperature of the fluid medium is also increased.

The process gas inlet channel 200 is in communication with the process chamber 100 for introducing process gas into the process chamber 100.

The gas heating device 300 is communicated with the outlet end of a cooling pipeline, the process gas input channel 200 is arranged in the gas heating device 300, the cooling pipeline is used for enabling introduced fluid media to enter the gas heating device 300 after the introduced fluid media and the chamber heating assembly are subjected to heat exchange, and the fluid media heat the process gas in the process gas input channel 200. The fluid medium in the cooling line first exchanges heat with the chamber heating assembly and then enters the gas heating device 300 through the outlet end, thereby heating the process gas in the process gas inlet channel 200. The fluid medium may be a gas, for example, the fluid medium may be water vapor, or other gases; the fluid medium may also be a liquid, such as water, oil, etc.

In the case of a physical vapor transport valve PTV for producing semiconductor sheets (e.g., silicon carbide crystals), the process chamber 100 is in a high temperature (typically up to 2300 degrees celsius) environment and a temperature gradient is formed within the process chamber 100, and the process chamber 100 may form a cold end at a lower temperature. The temperature within the process chamber 100 may be heated by a chamber heating assembly that requires cooling by cooling lines to ensure the operating performance of the chamber heating assembly. Within the process chamber 100 is a high temperature source of material required for semiconductor sheet growth that sublimes and crystallizes at the cold end to form semiconductor sheets. When manufacturing semiconductor sheets in the process chamber 100, a proper amount of process gas (e.g., argon, nitrogen, etc.) needs to be introduced into the high temperature process chamber 100 through the process gas inlet channel 200 to maintain the process environment in the process chamber 100 constant. The process chamber 100 is also provided with an observation window 600 for detecting the temperature inside the process chamber 100.

In order to prevent the temperature of the input process gas from being too low, so that the high temperature source encounters the process gas with a lower temperature and condenses on the inner wall of the process chamber 100 and the observation window 600, thereby affecting the process environment of the process chamber 100, and the accuracy of the temperature detector 700 in detecting the temperature in the process chamber 100 through the observation window 600. In the embodiment of the application, the chamber heating assembly is arranged outside the process chamber 100, the chamber heating assembly is used for heating the process chamber 100, and the cooling pipeline is arranged outside the process chamber 100 and used for introducing the fluid medium to cool the chamber heating assembly; the process gas input channel 200 is communicated with the process chamber 100 and is used for introducing process gas into the process chamber 100; the gas heating device 300 is communicated with the outlet end of the cooling pipeline, the process gas input channel 200 is arranged in the gas heating device 300, after the cooling pipeline exchanges heat between the introduced fluid medium and the chamber heating component, the fluid medium enters the gas heating device 300, so that the fluid medium heats the process gas in the process gas input channel 200, the heated process gas is introduced into the process chamber 100, and the phenomenon that the process gas with lower temperature is condensed on the inner wall of the process chamber 100 and the observation window 600 when a high-temperature material source encounters is avoided, so that the process environment of the process chamber 100 is influenced, and the accuracy of the temperature in the process chamber 100 is detected.

In the semiconductor process equipment disclosed in the embodiment of the application, the chamber heating assembly and the cooling pipeline are arranged outside the process chamber 100, the process gas input channel 200 is communicated with the process chamber 100, the process gas input channel 200 is arranged in the gas heating device 300, so that the chamber heating assembly heats the process chamber 100, the cooling pipeline can be filled with fluid medium to cool the chamber heating assembly, the temperature of the fluid medium is increased after the fluid medium exchanges heat with the chamber heating assembly, the fluid medium with the increased temperature enters the gas heating device 300 through the outlet end of the cooling pipeline, the fluid medium heats the process gas in the process gas input channel 200 in the gas heating device 300, the heated process gas enters the process chamber 100, and the process gas with the lower temperature in a high-temperature material source can be prevented from being condensed on the inner wall and the observation window 600 of the process chamber 100, thereby affecting the process environment of the process chamber 100 and the accuracy of sensing the temperature within the process chamber 100; the fluid medium in the cooling pipeline is utilized to heat the process gas after exchanging heat with the chamber heating assembly, so that the fluid medium is utilized in multiple ways, and the overall economy of the semiconductor process equipment and the reasonability of the design are improved.

In some embodiments, the gas heating apparatus 300 may be of a trough-like configuration, and the fluid medium in the cooling circuit may enter the trough of the trough-like configuration after heat exchange with the chamber heating assembly, but the trough-like configuration has the problem of rapid temperature dissipation, and in order to prevent the fluid medium from dissipating heat too quickly in the gas heating apparatus 300, it is preferred that the gas heating apparatus 300 comprises a heating cabinet 310, the process gas inlet channel 200 may pass through the interior of the heating cabinet 310, the heating cabinet 310 has a fluid inlet 311 and a fluid outlet 312, and the fluid inlet 311 may communicate with the outlet end of the cooling circuit for discharging the fluid medium into the heating cabinet 310 to heat the process gas in the process gas inlet channel 200 located in the heating cabinet 310 and to discharge through the fluid outlet 312.

The fluid medium heating the process gas in the process gas inlet channel 200 may be that the process gas inlet channel 200 is located in the fluid medium such that the fluid medium flows through the outer wall of the process gas inlet channel 200, thereby heating the process gas in the process gas inlet channel 200 by heat exchange; the fluid medium may be inside the heating chamber 310 without being in direct contact with the process gas inlet channel 200, and the fluid medium may increase the temperature of the environment inside the heating chamber 310, thereby increasing the temperature of the process gas in the process gas inlet channel 200 inside the heating chamber 310. The process gas feed channel 200 and the heating chamber 310 may be sealingly connected at the penetration.

By configuring the gas heating apparatus 300 as the heating tank 310 such that the process gas input path 200 can pass through the inside of the heating tank 310, by providing the fluid inlet 311 and the fluid outlet 312 on the heating tank 310, the fluid inlet 311 communicates with the outlet end of the cooling line such that the fluid medium can enter the heating tank 310 along the fluid inlet 311, thereby allowing the fluid medium to heat the process gas in the process gas input path 200 located inside the heating tank 310; the fluid medium enters from the fluid inlet 311 and is discharged through the fluid outlet 312, so that the fluid medium is in a flowing state in the heating box 310, and the fluid medium after heat exchange with the chamber heating assembly can continuously flow into the heating box 310, so that the process gas in the process gas input channel 200 can be continuously heated, and the heating stability can be effectively improved.

In an alternative embodiment, the fluid inlet 311 and the fluid outlet 312 may be respectively disposed on both sidewalls of the heating chamber 310, the fluid outlet 312 is located higher than the process gas inlet channel 200, and the fluid inlet 311 is located lower than the process gas inlet channel 200.

The position of the fluid outlet 312 is higher than the position of the process gas input channel 200, and the position of the fluid inlet 311 is lower than the position of the process gas input channel 200, so that the fluid medium can converge in the heating box 310, and the process gas input channel 200 in the heating box is located in the fluid medium, thereby effectively increasing the heat exchange contact area between the fluid medium and the process gas input channel 200, effectively increasing the heat exchange efficiency between the process gas input channel 200 and the fluid medium, and improving the heating efficiency of the process gas.

Semiconductor processing equipment requires cooling of the semiconductor processing equipment when preparing semiconductor sheets. In an alternative embodiment, the semiconductor processing apparatus may further comprise a return line 400 and a vent line 930, the return line 400 being adapted to communicate the outlet end of the cooling line with the fluid inlet 311, and the vent line 930 being adapted to communicate the fluid outlet 312 with the service end. The fluid medium may be cooled by the cooling line and enter the heating chamber 310 through the return line 400. When the fluid medium flows through the chamber heating assembly through the cooling line, the fluid medium exchanges heat with the chamber heating assembly, so that the temperature of the chamber heating assembly is lowered, the temperature of the fluid medium is raised, and the fluid medium with the raised temperature enters the heating box body 310 through the return line 400, so that the fluid medium heats the process gas in the process gas input channel 200. The fluid medium is exhausted from the fluid outlet 312 through the heating tank 310 to the plant side through the exhaust line 930. Return line 400 may only feed a portion of the fluid medium flowing through the chamber heating assembly.

By arranging the return line 400 and the exhaust line 930 such that the return line 400 communicates the cooling line with the fluid inlet 311, the exhaust line 930 communicates the fluid outlet with the service end, thereby forming a flow path for the fluid medium.

In an alternative embodiment, the chamber heating assembly may include an induction coil 500, and the induction coil 500 may be disposed around the outside of the process chamber 100 for inductively heating the process chamber 100. The inside of the induction coil 500 is a hollow structure, and the hollow structure inside the induction coil 500 forms a cooling pipe.

The fluid medium flows through the induction coil 500 and enters the heating chamber 310. The temperature of the fluid medium after flowing through the induction coil 500 can reach 40 ℃, and the flow rate of the fluid medium flowing through the induction coil 500 can reach 10L/min. By passing the fluid medium through the induction coil 500, the fluid medium can exchange heat with the induction coil 500, the temperature of the fluid medium is increased, and the fluid medium with the increased temperature enters the gas heating apparatus 300 to heat the process gas in the process gas input channel 200.

The process gas is heated by the fluid medium which flows through the induction coil 500 and then enters the gas heating device 300, so that the fluid medium can effectively cool the induction coil 500, and the fluid medium with relatively high temperature can also flow into the gas heating device 300, so that the fluid medium can be utilized in multiple ways.

In an alternative embodiment, the induction coil 500 may include a first end and a second end, the second end may be located above the first end, the inlet end of the cooling line may be located at the first end, and the outlet end of the cooling line may be located at the second end. The second end of the induction coil 500 is arranged above the first end, the inlet end of the cooling pipeline is located at the first end, and the outlet end of the cooling pipeline is located at the second end, so that the fluid medium flows through the induction coil 500 from bottom to top, and is restricted by gravity, so that the heat exchange time between the fluid medium flowing through the induction coil 500 and the induction coil 500 is longer, the fluid medium is prevented from flowing through the induction coil 500 too fast, the heat exchange contact surface between the fluid medium and the induction coil 500 is more sufficient, the cooling efficiency of the fluid medium on the induction coil 500 is relatively higher, the temperature of the fluid medium flowing through the induction coil 500 is relatively higher, and the performance of the fluid medium for heating the process gas in the heating box body 310 can be improved.

In order to ensure the process environment of the process chamber 100, different process gases are introduced into the process chamber 100. Preferably, the process gas input channel 200 may include one first gas channel 210 and two second gas channels 220, the first gas channel 210 is used for introducing argon gas, the second gas channel 220 is used for introducing nitrogen gas, wherein the gas flow rate of one second gas channel 220 is greater than that of the other second gas channel 220, and both the first gas channel 210 and the second gas channel 220 penetrate through the heating box 310 and are communicated with the process chamber. Specifically, in the process stage of the semiconductor processing equipment, the part of the second gas channel 220 with a smaller gas flow rate delivers nitrogen gas into the process chamber 100 to meet the environmental requirements of the process chamber 100 during the process, and the problem of larger environmental fluctuation in the process chamber 100 caused by an excessively large gas flow rate is also avoided. In the auxiliary process stage (e.g., the stage when the chamber is cooled down and the chamber is pretreated to reach the process environment), both the two second gas channels 220 may be opened, so that the auxiliary process stage has higher efficiency and saves time and cost.

Through setting up first gas passage 210 and two way second gas passage 220 of the same kind, make first gas passage 210 let in argon gas, second gas passage 220 lets in nitrogen gas, and the gas flow of second gas passage 220 of the same kind is greater than the gas flow of another way second gas passage 220, first gas passage 210 and second gas passage 220 all pass the inside of heating box 310 simultaneously, and all communicate with the process chamber, not only can realize the more accurate control to the internal environment of process chamber 100, can also improve fluid medium and process gas input channel 200 heat transfer contact ground effective area effectively, thereby improve heat transfer capacity.

Further, the semiconductor processing equipment may further include a gas box 900, a plurality of flow controllers 910 and a plurality of on-off valves 920 may be disposed in the gas box 900, the first gas channel 210 and the second gas channel 220 both pass through the gas box 900, the first gas channel 210 and the second gas channel 220 both are provided with the flow controllers 910 and the on-off valves 920, and the flow controllers 910 and the on-off valves 920 are used for controlling the on-off of the first gas channel 210 and the second gas channel 220 and the flow of the gas flowing into the process chamber 100. Through setting up the gas circuit box 900, can be provided with a plurality of flow controllers 910 and a plurality of on-off valve 920 in the gas circuit box 900 for first gas passageway 210 and second gas passageway 220 all pass gas circuit box 900, and first gas passageway 210 and second gas passageway 220 all are provided with flow controllers 910 and on-off valve 920, thereby make the break-make of flow controllers 910 and second gas passageway 220 and the gas flow who flows into process chamber 100 of control that flow controllers 910 and on-off valve 920 can be more accurate, thereby realize the more accurate control to the interior environment of process chamber 100.

When the heating of the fluid medium to the process gas does not meet the temperature requirement, other devices are generally required to make the temperature of the fluid medium within a preset temperature range, where the preset temperature range may be a temperature at which the temperature of the process gas can meet the requirement when the fluid medium heats the process gas. In an alternative embodiment, the gas heating apparatus 300 may further include a heating element, a temperature detecting element and a controller, wherein the heating element and the temperature detecting element may be connected to the controller, the heating element is used for heating the fluid medium in the gas heating apparatus 300, and the temperature detecting element is used for detecting the temperature of the fluid medium in the gas heating apparatus. The controller can control the power of the heating element for heating the fluid medium according to the actual temperature of the fluid medium detected by the temperature detection element, so that the actual temperature of the fluid medium is within a preset temperature range.

Through setting up heating member, temperature detection spare controller for heating member and temperature detection spare all can be connected with the controller, and then make controlgear can detect the actual temperature of the fluid medium who detects with control heating member heating fluid medium according to the temperature, thereby make the actual temperature of fluid medium be located predetermines temperature range, thereby improved the stability of fluid medium to the process gas heating effectively.

Further, the process chamber 100 may include an observation window 600 and a temperature measuring instrument 700, the temperature measuring instrument 700 may detect a temperature inside the process chamber 100 through the observation window 600, the process gas input passage 200 may communicate with the process chamber 100 near the observation window 600, the semiconductor process apparatus may further include an exhaust passage 800 communicating with the process chamber 100, and the exhaust passage 800 may be disposed at the bottom of the process chamber 100. By arranging the observation window 600 and the temperature measuring instrument 700, the temperature measuring instrument 700 can detect the temperature in the process chamber 100 through the observation window 600, and further can more accurately control the temperature in the process chamber 100; since the process gas inlet passage 200 communicates with the process chamber 100 near the observation window 600, the exhaust passage 800 is disposed at the bottom of the process chamber 100, so that the process gas forms a flow path in the process chamber 100.

In the above embodiments of the present invention, the differences between the embodiments are described in emphasis, and different optimization features between the embodiments can be combined to form a better embodiment as long as the differences are not contradictory, and further description is omitted here in view of brevity of the text.

While the present invention has been described with reference to the particular illustrative embodiments, it is to be understood that the utility model is not limited to the disclosed embodiments, but is intended to cover various modifications, equivalent arrangements, and equivalents thereof, which may be made by those skilled in the art without departing from the spirit and scope of the utility model as defined by the appended claims.

Claims

1. A semiconductor processing apparatus comprising a process chamber (100), a chamber heating assembly, a cooling circuit, a process gas input channel (200), and a gas heating device (300), wherein:

the chamber heating assembly is arranged outside the process chamber (100) and used for heating the process chamber (100);

the cooling pipeline is arranged outside the process chamber (100) and is used for introducing a fluid medium so as to cool the chamber heating assembly;

the process gas input channel (200) is communicated with the process chamber (100) and is used for introducing process gas into the process chamber (100);

the gas heating device (300) is communicated with the outlet end of the cooling pipeline, the process gas input channel (200) is arranged in the gas heating device (300), the cooling pipeline is used for enabling the introduced fluid medium to enter the gas heating device (300) after the fluid medium exchanges heat with the chamber heating assembly, and the fluid medium heats the process gas in the process gas input channel (200).

2. The semiconductor processing apparatus according to claim 1, wherein the gas heating device (300) comprises a heating tank (310), the process gas input channel (200) passing through an interior of the heating tank (310), the heating tank (310) having a fluid inlet (311) and a fluid outlet (312), the fluid inlet (311) communicating with an outlet end of the cooling line for discharging the fluid medium into the heating tank (310) and through the fluid outlet (312).

3. The semiconductor processing apparatus according to claim 2, wherein the fluid inlet (311) and the fluid outlet (312) are respectively located on both sidewalls of the heating chamber body (310), the fluid outlet (312) is located higher than the process gas inlet channel (200), and the fluid inlet (311) is located lower than the process gas inlet channel (200).

4. The semiconductor processing apparatus of claim 2, further comprising a return line (400) and a vent line (930), the return line (400) being configured to communicate an outlet end of the cooling line with the fluid inlet (311), the vent line (930) being configured to communicate the fluid outlet (312) with a service end.

5. The semiconductor processing apparatus of claim 1, wherein the chamber heating assembly comprises an induction coil (500), the induction coil (500) being circumferentially disposed outside the process chamber (100) for inductively heating the process chamber (100);

the inside of the induction coil (500) is a hollow structure, and the hollow structure inside the induction coil (500) forms the cooling pipeline.

6. The semiconductor processing apparatus of claim 5, wherein the induction coil (500) includes a first end and a second end, the second end being located above the first end, the inlet end of the cooling line being located at the first end, and the outlet end of the cooling line being located at the second end.

7. The semiconductor processing equipment according to claim 2, wherein the process gas input channel (200) comprises a first gas channel (210) and a second gas channel (220), the first gas channel (210) is used for introducing argon gas, the second gas channel (220) is used for introducing nitrogen gas, wherein the gas flow rate of one of the second gas channels (220) is greater than that of the other second gas channel (220), and the first gas channel (210) and the second gas channel (220) both penetrate through the inside of the heating box body (310) and are both communicated with the process chamber (100).

8. The semiconductor processing apparatus according to claim 7, further comprising a gas box (900), wherein a plurality of flow controllers (910) and a plurality of on-off valves (920) are disposed in the gas box (900), the first gas channel (210) and the second gas channel (220) both pass through the gas box (900), the flow controllers (910) and the on-off valves (920) are disposed in the first gas channel (210) and the second gas channel (220), and the flow controllers (910) and the on-off valves (920) are used for controlling the on-off of the first gas channel (210) and the second gas channel (220) and the flow of the gas flowing into the process chamber (100).

9. The semiconductor processing apparatus according to claim 1, wherein the process chamber (100) comprises an observation window (600) and a temperature detector (700), the temperature detector (700) detecting a temperature within the process chamber (100) through the observation window (600), the process gas input channel (200) communicating with the process chamber (100) proximate to the observation window (600);

the semiconductor processing equipment further comprises an exhaust channel (800) communicated with the process chamber (100), wherein the exhaust channel (800) is arranged at the bottom of the process chamber (100).

10. The semiconductor processing apparatus according to claim 1, wherein said gas heating device (300) further comprises a heating element, a temperature detecting element and a controller, said heating element and said temperature detecting element being connected to said controller, said heating element being adapted to heat said fluid medium in said gas heating device (300), said temperature detecting element being adapted to detect a temperature of said fluid medium in said gas heating device (300);

the controller controls the power of the heating element for heating the fluid medium according to the actual temperature of the fluid medium detected by the temperature detection element, so that the actual temperature of the fluid medium is within a preset temperature range.