CN216998663U - Doping device applied to growth of germanium single crystal - Google Patents
Doping device applied to growth of germanium single crystal Download PDFInfo
- Publication number
- CN216998663U CN216998663U CN202123177763.8U CN202123177763U CN216998663U CN 216998663 U CN216998663 U CN 216998663U CN 202123177763 U CN202123177763 U CN 202123177763U CN 216998663 U CN216998663 U CN 216998663U
- Authority
- CN
- China
- Prior art keywords
- single crystal
- doping
- germanium single
- device body
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910052732 germanium Inorganic materials 0.000 title claims abstract description 40
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims abstract description 40
- 239000013078 crystal Substances 0.000 title claims abstract description 35
- 239000002019 doping agent Substances 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 9
- 239000000155 melt Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model provides a doping device applied to growth of a germanium single crystal, which comprises a device body and a connecting part connected to one end part of the device body, wherein one end of the device body, which is opposite to the connecting part, is provided with an accommodating cavity for accommodating a doping agent. The doping device is simple in structure and convenient to operate, and can add the dopant again in the middle of the growth process of the germanium single crystal, so that the resistivity parameter in the growth process of the germanium single crystal can be adjusted, and the produced germanium single crystal can meet the required resistivity.
Description
Technical Field
The utility model relates to the technical field of germanium single crystal growth, in particular to a doping device applied to germanium single crystal growth.
Background
Doping is an effective method for controlling the resistivity of the germanium single crystal, generally, the dosage of a dopant is determined before the growth of the germanium single crystal according to the required resistivity, and once doping is finished, doping cannot be carried out again after the growth of the germanium single crystal is started to adjust the resistivity parameter.
However, the method of doping impurities before the start of growth of the germanium single crystal cannot adjust the resistivity during pulling, and there is no doping apparatus dedicated to the growth of the germanium single crystal at present, so that there is an urgent need for a doping apparatus capable of adding dopant again in the middle of the growth of the germanium single crystal.
SUMMERY OF THE UTILITY MODEL
In order to solve the technical problem that secondary doping cannot be performed in the middle of the pulling process of the germanium single crystal in the prior art, the utility model mainly aims to provide the doping device applied to the growth of the germanium single crystal, the doping device is simple in structure and convenient to operate, and a dopant can be added again in the middle of the growth process of the germanium single crystal, so that the resistivity parameter in the growth process of the germanium single crystal can be adjusted, and the produced germanium single crystal can meet the required resistivity.
In order to achieve the above object, the present invention provides a doping apparatus applied to germanium single crystal growth.
The doping device applied to germanium single crystal growth comprises a device body and a connecting part connected to one end part of the device body, wherein an accommodating cavity is formed in one end, opposite to the connecting part, of the device body and used for accommodating a doping agent.
Further, the device body is cylindrical, and the containing cavity is formed in the side wall of the device body.
Further, the accommodating cavity is in an inclined U shape.
Further, the connecting part is in an inverted cone frustum shape, and the end face of the connecting part is connected with the device body.
Furthermore, the device body is made of high-purity germanium.
Furthermore, the connecting part is made of high-purity germanium.
The doping device applied to the growth of the germanium single crystal has the advantages that:
1. the doping device is simple in structure and convenient to operate.
2. The doping device can dope at any stage of growth of the germanium single crystal, so that rejection of the whole single crystal due to unqualified resistivity caused by improper initial doping is avoided, and the production efficiency is greatly improved.
3. Germanium seed crystals are selected as the material of the device body, and pollution to raw materials is avoided.
Drawings
Various additional advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the utility model. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
fig. 1 is a schematic structural diagram of a doping apparatus applied to germanium single crystal growth in an embodiment of the present invention.
In the figure:
1. a device body; 2. a connecting member; 3. a receiving cavity.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
The utility model provides a doping device applied to germanium single crystal growth, as shown in fig. 1, the doping device applied to germanium single crystal growth comprises a device body 1, wherein the device body 1 is cylindrical; the doping device applied to the growth of the germanium single crystal further comprises a connecting part 2 connected to one end part of the device body 1, wherein the connecting part 2 is used for connecting the device body 1 with the weight device; the device body 1 is provided with an accommodating cavity 3 at one end opposite to the connecting part 2, and the accommodating cavity 3 is mainly used for accommodating a doping agent.
In the embodiment of the utility model, the device body 1 is made of high-purity germanium, when in use, a doping agent is firstly placed in the accommodating cavity 3, then the whole doping device is connected with the heavy hammer device through the connecting part 2, the doping device is lowered to the surface of a melt through lifting and moving the device body 1, after preheating is carried out for a plurality of minutes, the device body 1 is lowered into the melt, the accommodating cavity 3 is melted in the melt, and doping of the doping agent is completed.
In the present invention, the accommodating chamber 3 is formed on the side wall of the apparatus body 1, and the specific shape of the accommodating chamber 3 is not limited as long as it can accommodate the dopant and ensure that the dopant is not exposed during the movement.
Fig. 1 shows a containing cavity 3 with an inclined U-shaped structure, which is designed to have a certain containing depth and better contain dopant.
As shown in fig. 1, the connection member 2 has an inverted truncated cone shape, and an end surface thereof is connected to the device body 1. In actual practice, the inverted truncated cone-shaped connecting member 2 is engaged with the weight device, and the device body 1 is fixed to the weight device.
The material of the connecting part 2 may be high-purity germanium, and the connecting part 2 and the device body 1 may be designed as an integrated structure.
The operation method for rapidly heating the dopant in the growth process of the germanium single crystal by adopting the doping device comprises the following steps:
(1) firstly, fixing a device body on a heavy hammer device;
(2) loading a dopant into the containment chamber;
(3) lowering the doping device to the surface of the melt through the lifting device body, and preheating for a plurality of minutes;
(4) and (4) lowering the device body into the melt, melting the accommodating cavity, and enabling the dopant to enter the melt to complete doping.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (6)
1. The doping device applied to germanium single crystal growth is characterized by comprising a device body and a connecting part connected to one end part of the device body, wherein an accommodating cavity is formed in one end, opposite to the connecting part, of the device body and used for accommodating a doping agent.
2. A doping apparatus as set forth in claim 1, wherein the apparatus body has a cylindrical shape and the receiving chamber is opened in a side wall thereof.
3. The doping apparatus applied to germanium single crystal growth according to claim 1 or 2, wherein the accommodating cavity is in an inclined U shape.
4. The doping apparatus for growing germanium single crystal as claimed in claim 1, wherein the connecting member has an inverted truncated cone shape, and an end surface thereof is connected to the apparatus body.
5. The doping apparatus for growing germanium single crystal as claimed in claim 1, wherein the apparatus body is made of high purity germanium.
6. The doping apparatus for germanium single crystal growth according to claim 1, wherein the material of the connecting member is high-purity germanium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123177763.8U CN216998663U (en) | 2021-12-16 | 2021-12-16 | Doping device applied to growth of germanium single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123177763.8U CN216998663U (en) | 2021-12-16 | 2021-12-16 | Doping device applied to growth of germanium single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN216998663U true CN216998663U (en) | 2022-07-19 |
Family
ID=82382834
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202123177763.8U Active CN216998663U (en) | 2021-12-16 | 2021-12-16 | Doping device applied to growth of germanium single crystal |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN216998663U (en) |
-
2021
- 2021-12-16 CN CN202123177763.8U patent/CN216998663U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101724899B (en) | Growth process for N-type solar energy silicon single crystal with minority carrier service life of larger than or equal to 1,000 microseconds | |
| CN102260900B (en) | Device for improving consistency of longitudinal resistivity of single crystal silicon and treatment process thereof | |
| JP4103593B2 (en) | Recharge tube for solid polycrystalline raw material and method for producing single crystal using the same | |
| CN102409395B (en) | Gallium element doping device and method for Czochralski silicon | |
| WO2009104532A1 (en) | Silicon monocrystal growth method | |
| CN105264125B (en) | Garnet type single crystal and its manufacture method | |
| CN216998663U (en) | Doping device applied to growth of germanium single crystal | |
| CN103320849B (en) | Secondary feeding device and secondary feeding method therefor | |
| CN104746134B (en) | Using the n-type pulling single crystal silicon method of compensation silicon material | |
| CN103074669A (en) | Polycrystalline silicon ingot, preparation method thereof and polycrystalline silicon chip | |
| CN107268071A (en) | A kind of solar panel monocrystal silicon preparation technology | |
| CN202144523U (en) | Device for increasing consistency of longitudinal resistivity of mono-crystal silicon | |
| CN101671841B (en) | Method for preparing nitrogenous dopant for preparing czochralski silicon single crystal | |
| CN1455028A (en) | Gas-phase doping-area fused silicon monocrystal production method | |
| CN114875473B (en) | Crystal preparation method for improving KGW crystal quality and utilization rate | |
| CN103397378A (en) | Preparation method of polycrystalline silicon ingot | |
| JP3572998B2 (en) | Method for manufacturing single crystal silicon | |
| CN111717919A (en) | Manufacturing process of silicon core for polycrystalline silicon reduction furnace | |
| JP5375794B2 (en) | Method for producing silicon single crystal | |
| CN104746135A (en) | Growth method of induction furnace planar-interface large-sized neodymium-doped yttrium aluminium garnet crystal | |
| CN211367812U (en) | Novel seed crystal for pulling single crystal | |
| CN212741578U (en) | Doping device and master alloy preparation device | |
| CN103361716A (en) | Seed crystal holder | |
| KR101855814B1 (en) | Process for producing single-crystal silicon | |
| JP2011251892A (en) | InP SINGLE CRYSTAL AND METHOD FOR PRODUCING THE SAME |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20231201 Address after: 065001 No.4 Baihe Road, Langfang Development Zone, Langfang City, Hebei Province Patentee after: GRINM GUOJING ADVANCED MATERIALS Co.,Ltd. Patentee after: GRINM ADVANCED MATERIALS CO.,LTD. Address before: 065201 South Youyan Technology Group Co., Ltd. No.2, Xingdu village, Yanjiao, Sanhe City, Langfang City, Hebei Province Patentee before: GRINM GUOJING ADVANCED MATERIALS Co.,Ltd. |
|
| TR01 | Transfer of patent right |