CN216851908U - Power supply circuit for radio frequency power amplifier - Google Patents
Power supply circuit for radio frequency power amplifier Download PDFInfo
- Publication number
- CN216851908U CN216851908U CN202123028699.7U CN202123028699U CN216851908U CN 216851908 U CN216851908 U CN 216851908U CN 202123028699 U CN202123028699 U CN 202123028699U CN 216851908 U CN216851908 U CN 216851908U
- Authority
- CN
- China
- Prior art keywords
- capacitor
- power amplifier
- resistor
- voltage
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Amplifiers (AREA)
Abstract
The utility model provides a supply circuit for radio frequency power amplifier, relate to radio frequency power amplifier technical field, including boost chip U226 and radio frequency power amplifier U225, boost chip U226 includes input port LX and output port OUT, radio frequency power amplifier U225 includes first order amplification circuit power input port VCC1_1, high frequency channel second order amplification circuit power port VCC2 and low frequency channel second order amplification circuit power port VCC2_2, first voltage with first order amplification circuit power input port VCC1_1 and low frequency channel second order amplification circuit power port VCC2_2 are all connected for supply power for radio frequency power amplifier U225 when equipment work in the low frequency channel; the first voltage is connected with the input port LX, the output port OUT is connected with a power supply port VCC2 of the second-stage amplifying circuit of the high-frequency band, and the boosted high-voltage is output to the radio-frequency power amplifier U225 and used for supplying power to the radio-frequency power amplifier U225 when the equipment works in the high-frequency band.
Description
Technical Field
The utility model relates to a radio frequency power amplifier technical field, more specifically the utility model relates to a supply circuit for radio frequency power amplifier.
Background
The radio frequency power amplifier is a device with the largest power consumption in a radio frequency circuit of equipment such as a mobile phone or a router and the like, and is used as a core part of the whole radio frequency circuit, and the efficiency of the radio frequency power amplifier affects the efficiency of the whole system of the equipment. The first-stage amplification circuit and the second-stage amplification circuit of the radio frequency power amplifier need different working voltages, and in order to ensure the normal operation of the radio frequency power amplifier, power supply to the radio frequency power amplifier with different working voltages needs to be realized.
SUMMERY OF THE UTILITY MODEL
In order to overcome the deficiencies of the prior art, the utility model provides a supply circuit for radio frequency power amplifier.
The utility model provides a technical scheme that its technical problem adopted is: in a power supply circuit for a radio frequency power amplifier, the improvement comprising: the boost circuit comprises a boost chip U226 and a radio-frequency power amplifier U225, wherein the boost chip U226 comprises an input port LX and an output port OUT, the radio-frequency power amplifier U225 comprises a first-stage amplification circuit power input port VCC1_1, a high-frequency band second-stage amplification circuit power port VCC2 and a low-frequency band second-stage amplification circuit power port VCC2_2, and a first voltage is connected with the first-stage amplification circuit power input port VCC1_1 and the low-frequency band second-stage amplification circuit power port VCC2_2 and used for supplying power to the radio-frequency power amplifier U225 when the device works in the low-frequency band; the first voltage is connected with the input port LX, the output port OUT is connected with a power supply port VCC2 of the high-frequency-band second-stage amplifying circuit, and the boosted high-voltage is output to the radio-frequency power amplifier U225 and used for supplying power to the radio-frequency power amplifier U225 when the equipment works in the high-frequency band.
In the circuit, a first filtering module is arranged between the first voltage and the power input port VCC1_1 of the first-stage amplifying circuit, the first filtering module comprises a capacitor C5121, a capacitor C5120 and a capacitor C5119, one end of each of the capacitor C5121, the capacitor C5120 and the capacitor C5119 is connected with the first voltage, and the other end of each of the capacitor C5121, the capacitor C5120 and the capacitor C5119 is grounded.
In the circuit, a high-voltage output regulating module is arranged between the output port OUT and a power port VCC2 of the high-frequency second-stage amplifying circuit, and the high-voltage output regulating module is used for reducing high voltage output to the radio frequency power amplifier U225 when the device works in a low gain mode of a high-frequency band, so that power consumption is reduced.
In the circuit, the high-voltage output regulating module comprises a triode Q40, a resistor R5850, a resistor R5847 and a resistor R5846,
the output port OUT is connected with a resistor R5850, the other end of the resistor R5850 is connected with a collector of a triode Q40, and a base of the triode Q40 is connected with the main control chip and used for receiving a control signal for reducing the output high voltage;
a first connecting point is arranged between the output port OUT and the resistor R5850, the first connecting point is connected with a power supply port VCC2 of the high-frequency-band second-stage amplifying circuit, and voltage is output to the radio-frequency power amplifier U225;
the first connecting point is connected with a resistor R5847, the other end of the resistor R5847 is connected with a resistor R5846, and the other end of the resistor R5846 is grounded; a second connection point is provided between the resistor R5847 and the resistor R5846, and the second connection point is connected with an emitter of the transistor Q40.
In the circuit, a second filtering module is further arranged between the first connecting point and a power supply port VCC2 of the high-frequency-band second-stage amplifying circuit, the second filtering module comprises a capacitor C5124, a capacitor C5123 and a capacitor C5122, one end of each of the capacitor C5124, the capacitor C5123 and the capacitor C5122 is connected with the first connecting point, and the other end of each of the capacitor C5124, the capacitor C5123 and the capacitor C5122 is grounded.
The utility model has the advantages that: the power supply to different working voltages of the radio frequency power amplifier is realized, and the output of the radio frequency power amplifier is ensured to be in accordance with the high-power output of HPUE PC 2; and the regulation of the high voltage value output to the radio frequency power amplifier is realized, the power consumption of the equipment is reduced, and the endurance time of a battery of the equipment is longer.
Drawings
Fig. 1 is a block diagram of a power supply circuit for a radio frequency power amplifier according to the present invention.
Fig. 2 is a circuit diagram of the rf power amplifier of the present invention.
Fig. 3 is the circuit diagram of the boost chip and the high-voltage output regulation module of the present invention.
Detailed Description
The present invention will be further explained with reference to the drawings and examples.
The conception, the specific structure, and the technical effects produced by the present invention will be clearly and completely described below in conjunction with the embodiments and the accompanying drawings to fully understand the objects, the features, and the effects of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all embodiments, and other embodiments obtained by those skilled in the art without inventive labor based on the embodiments of the present invention all belong to the protection scope of the present invention. In addition, all the connection/connection relations referred to in the patent do not mean that the components are directly connected, but mean that a better connection structure can be formed by adding or reducing connection auxiliary components according to specific implementation conditions. The utility model discloses each technical feature in the creation can the interactive combination under the prerequisite that does not contradict conflict each other.
Referring to fig. 1 and 2, the present invention discloses a power supply circuit for rf power amplifier, which can be applied to wireless data devices of personal users, such as mobile phones, routers, etc., wherein the power supply voltage automatic switching circuit comprises a boost chip U226 and an rf power amplifier U225, the model of the boost chip U226 is SY7069 ADC, the model of the rf power amplifier U225 is HS8443-71, the boost chip U226 comprises an input port LX and an output port OUT, the rf power amplifier U225 comprises a first stage amplification circuit power input port VCC1_1, a high frequency band second stage amplification circuit power port VCC2 and a low frequency band second stage amplification circuit power port VCC2_2, a first voltage (i.e. normal voltage VPA) is connected to the first stage amplification circuit power input port VCC1_1, the first voltage (i.e. normal voltage VPA) is connected to the low frequency band second stage amplification circuit power port VCC2_2, powering the rf power amplifier U225 when the device is operating in the low frequency band, the first voltage typically being provided by a battery; further, a first filtering module 10 is arranged between the first voltage and the first-stage amplifying circuit power input port VCC1_1, the first filtering module 10 filters the voltage output to the first-stage amplifying circuit power input port VCC1_1, the first filtering module 10 includes a capacitor C5121, a capacitor C5120 and a capacitor C5119, one end of each of the capacitor C5121, the capacitor C5120 and the capacitor C5119 is connected to the first voltage, and the other end of each of the capacitor C5121, the capacitor C5120 and the capacitor C5119 is grounded; the first voltage is connected with the input port LX, the output port OUT is connected with a power supply port VCC2 of the second-stage amplifying circuit of the high-frequency band, the high-voltage boosted by the boosting chip U226 (namely 4V2_ VPA) is output to the radio-frequency power amplifier U225, and the power is supplied to the radio-frequency power amplifier U225 when the equipment works in the high-frequency band. Thus, when the device operates in the low frequency band, the rf power amplifier U225 is completely powered by the first voltage (i.e., the normal voltage VPA), and does not use the high voltage 4V2 — VPA, thereby ensuring that power consumption is not increased; when the device works in a high-frequency band, the first-stage amplification circuit is powered by the first voltage (namely, the normal voltage VPA), the second-stage amplification circuit is powered by the high-voltage boosted by the boosting chip U226 (namely, the 4V2_ VPA high-voltage power supply), the power supply of different working voltages of the radio-frequency power amplifier U225 is realized, the output of the radio-frequency power amplifier U225 can be completely ensured to meet the high-power output of the HPUE PC2, and the HPUE PC2 is high-power user equipment (power class 2).
When the device operates in a low gain mode in a high frequency band (i.e., the base station signal is good and maximum power transmission of the device is not required), the second stage amplification circuit is powered by a 4.2V high voltage power supply, which causes additional power consumption. Therefore, a high-voltage output regulating module is further added between the output port OUT and the power port VCC2 of the second-stage amplifying circuit in the high-frequency band, so that when the device works in a low-gain mode in the high-frequency band, the actual output voltage output by the 4.2V power supply is reduced, and the efficiency and the endurance of the device are further improved. Referring to fig. 3, a high voltage output regulating module 20 is disposed between the output port OUT and the power port VCC2 of the second-stage amplifying circuit in the high frequency band, and when the device operates in the low gain mode in the high frequency band, the high voltage output regulating module 20 reduces the high voltage output to the radio frequency power amplifier U225, so as to reduce the power consumption of the device. The high-voltage output adjusting module 20 includes a transistor Q40, a resistor R5850, a resistor R5847, and a resistor R5846, the output port OUT is connected to the resistor R5850, the other end of the resistor R5850 is connected to a collector of the transistor Q40, a base of the transistor Q40 is connected to a main control chip (not shown in the figure), and is configured to receive a control signal GRFC7_ B41_ HPUE _ SEL which is sent by the main control chip and used for reducing an output high voltage; a first connecting point 30 is arranged between the output port OUT and the resistor R5850, the first connecting point 30 is connected with a power supply port VCC2 of the high-frequency-band second-stage amplifying circuit, and the voltage is output to the radio frequency power amplifier U225; the first connecting point 30 is connected with a resistor R5847, the other end of the resistor R5847 is connected with a resistor R5846, and the other end of the resistor R5846 is grounded; a second connection point 40 is provided between the resistor R5847 and the resistor R5846, and the second connection point 40 is connected to the emitter of the transistor Q40. In this embodiment, when the device is in the high power output mode of the high frequency band, the control signal GRFC7_ B41_ HPUE _ SEL received by the base of the transistor Q40 is at a low level, the transistor Q40 is turned off, the additional resistor R5850 does not function, the boost chip U226 outputs 4.2V according to the ratio of the voltage-dividing feedback resistor R5847 to the resistor R5846, where Vout is 1.2V (1+ R5847/R5846) is 4.25V, and at this time, a high voltage of 4.2V is output to the rf power amplifier U225; when the device is in a normal power output mode (i.e., a low gain mode of a high frequency band), a control signal GRFC7_ B41_ HPUE _ SEL received by the base of the transistor Q40 is at a high level, the transistor Q40 is turned on, the additional resistor R5850 and the resistor R5847 are connected in parallel, the resistance value R 'after parallel connection is 3V R5847R 5850/(3V R5850+ R5847 (3-Vce (Q40))), the R' is substituted into an output voltage formula to calculate a new voltage value, the output voltage value is about 3.5V by adjusting the resistor R5850, and at this time, the high voltage power supply output to the rf power amplifier U225 is 3.5V, so that the function of adjusting the high voltage value output to the rf power amplifier U225 is realized, the power consumption of the device is reduced, and the endurance time of a battery of the device is longer.
Further, as shown in fig. 2 and fig. 3, a second filtering module 50 is further disposed between the first connection point 30 and the high-frequency band second-stage amplifying circuit power port VCC2, the second filtering module 50 filters a voltage output to the high-frequency band second-stage amplifying circuit power port VCC2, the second filtering module 50 includes a capacitor C5124, a capacitor C5123, and a capacitor C5122, one end of each of the capacitor C5124, the capacitor C5123, and the capacitor C5122 is connected to the first connection point 30, and the other end of each of the capacitor C5124, the capacitor C5123, and the capacitor C5122 is grounded.
The circuit realizes the power supply of different working voltages of the radio frequency power amplifier, and ensures that the output of the radio frequency power amplifier conforms to the high power output of the HPUE PC 2; and the regulation of the high voltage value output to the radio frequency power amplifier is realized, the power consumption of the equipment is reduced, and the endurance time of a battery of the equipment is longer.
While the preferred embodiments of the present invention have been described, the present invention is not limited to the above embodiments, and those skilled in the art can make various equivalent modifications or substitutions without departing from the spirit of the present invention, and such equivalent modifications or substitutions are intended to be included within the scope of the present invention as defined by the appended claims.
Claims (5)
1. A power supply circuit for a radio frequency power amplifier, characterized by: the boost circuit comprises a boost chip U226 and a radio frequency power amplifier U225, wherein the boost chip U226 comprises an input port LX and an output port OUT, the radio frequency power amplifier U225 comprises a first-stage amplifying circuit power supply input port VCC1_1, a high-frequency band second-stage amplifying circuit power supply port VCC2 and a low-frequency band second-stage amplifying circuit power supply port VCC2_2,
the first voltage is connected with both the power input port VCC1_1 of the first-stage amplification circuit and the power port VCC2_2 of the second-stage amplification circuit of the low-frequency band, and is used for supplying power to the radio frequency power amplifier U225 when the device works in the low-frequency band;
the first voltage is connected with the input port LX, the output port OUT is connected with a power supply port VCC2 of the high-frequency-band second-stage amplifying circuit, and the boosted high-voltage is output to the radio-frequency power amplifier U225 and used for supplying power to the radio-frequency power amplifier U225 when the equipment works in the high-frequency band.
2. A supply circuit for a radio frequency power amplifier as claimed in claim 1, characterized in that: a first filtering module is arranged between the first voltage and the power input port VCC1_1 of the first-stage amplifying circuit, the first filtering module comprises a capacitor C5121, a capacitor C5120 and a capacitor C5119, one end of each of the capacitor C5121, the capacitor C5120 and the capacitor C5119 is connected with the first voltage, and the other end of each of the capacitor C5121, the capacitor C5120 and the capacitor C5119 is grounded.
3. A supply circuit for a radio frequency power amplifier as claimed in claim 1, characterized in that: and a high-voltage output adjusting module is arranged between the output port OUT and a power port VCC2 of the high-frequency second-stage amplifying circuit, and is used for reducing the high voltage output to the radio-frequency power amplifier U225 when the equipment works in a low-gain mode of a high-frequency band, so that the power consumption is reduced.
4. A supply circuit for a radio frequency power amplifier as claimed in claim 3, characterized in that: the high-voltage output regulating module comprises a triode Q40, a resistor R5850, a resistor R5847 and a resistor R5846,
the output port OUT is connected with a resistor R5850, the other end of the resistor R5850 is connected with a collector of a triode Q40, and a base of the triode Q40 is connected with the main control chip and used for receiving a control signal for reducing the output high voltage;
a first connecting point is arranged between the output port OUT and the resistor R5850, the first connecting point is connected with a power supply port VCC2 of the high-frequency-band second-stage amplifying circuit, and voltage is output to the radio-frequency power amplifier U225;
the first connecting point is connected with a resistor R5847, the other end of the resistor R5847 is connected with a resistor R5846, and the other end of the resistor R5846 is grounded; a second connection point is provided between the resistor R5847 and the resistor R5846, and the second connection point is connected with an emitter of the transistor Q40.
5. A supply circuit for a radio frequency power amplifier as claimed in claim 4, characterized in that: and a second filtering module is also arranged between the first connecting point and the power supply port VCC2 of the high-frequency-band second-stage amplifying circuit, the second filtering module comprises a capacitor C5124, a capacitor C5123 and a capacitor C5122, one end of each of the capacitor C5124, the capacitor C5123 and the capacitor C5122 is connected with the first connecting point, and the other end of each of the capacitors is grounded.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123028699.7U CN216851908U (en) | 2021-12-03 | 2021-12-03 | Power supply circuit for radio frequency power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123028699.7U CN216851908U (en) | 2021-12-03 | 2021-12-03 | Power supply circuit for radio frequency power amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN216851908U true CN216851908U (en) | 2022-06-28 |
Family
ID=82107120
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202123028699.7U Active CN216851908U (en) | 2021-12-03 | 2021-12-03 | Power supply circuit for radio frequency power amplifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN216851908U (en) |
-
2021
- 2021-12-03 CN CN202123028699.7U patent/CN216851908U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP3940942B1 (en) | Method and power supply for rf power amplifier | |
| US9628118B2 (en) | Adaptive envelope tracking for biasing radio frequency power amplifiers | |
| KR100264897B1 (en) | Power providing method and device in mobile communication apparatus | |
| CN101043202B (en) | High-frequency power amplifier | |
| CN103731107A (en) | Control circuit and method for controlling an operation of a power amplifier | |
| EP2439987A1 (en) | Circuit and method for reducing radio-frequency power consumption of mobile phone | |
| CN1282139A (en) | Amplifier load regulating system based on memory | |
| KR100630340B1 (en) | Bias control circuit for power amplifier | |
| EP2557681B1 (en) | Voltage driving apparatus for power amplifier, power amplifying system, power supply device for radio frequency power amplifier and communication device | |
| CN108667471A (en) | A kind of power supply circuit and method | |
| US8688061B2 (en) | System and method for biasing a power amplifier | |
| US20010043060A1 (en) | DC/DC converters | |
| EP1530303A1 (en) | Power control in a mobile communication system | |
| CN215990916U (en) | Noise reduction system and mobile device | |
| JP2014045593A (en) | Radio communication device and portable electronic apparatus | |
| Kim et al. | 33.9 A hybrid switching supply modulator achieving 130MHz envelope-tracking bandwidth and 10W output power for 2G/3G/LTE/NR RF power amplifiers | |
| CN216851908U (en) | Power supply circuit for radio frequency power amplifier | |
| CN216253227U (en) | Audio power supply circuit structure | |
| CN213783248U (en) | Doherty power amplifying circuit applied to average power tracking and electronic equipment | |
| WO2022227023A1 (en) | Power supply circuit for power amplifier and communication device | |
| CN110739916B (en) | Power supply circuit and terminal device | |
| CN110719073A (en) | Mixed envelope modulation method and circuit applied to radio frequency power amplifier | |
| JP2000295046A (en) | Electronic equipment having power amplifier | |
| KR100654644B1 (en) | Power amplifier having optimized power added efficiencyPAE | |
| CN117728781B (en) | Power amplifier |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |