CN216774605U - 碳化硅mosfet驱动电路、开关电源及电子设备 - Google Patents
碳化硅mosfet驱动电路、开关电源及电子设备 Download PDFInfo
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- CN216774605U CN216774605U CN202123326577.6U CN202123326577U CN216774605U CN 216774605 U CN216774605 U CN 216774605U CN 202123326577 U CN202123326577 U CN 202123326577U CN 216774605 U CN216774605 U CN 216774605U
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- silicon carbide
- carbide mosfet
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- voltage signal
- mosfet
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 164
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 160
- 230000005669 field effect Effects 0.000 title abstract description 3
- 239000004065 semiconductor Substances 0.000 title abstract description 3
- 238000004804 winding Methods 0.000 claims abstract description 86
- 230000000087 stabilizing effect Effects 0.000 claims description 11
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000011084 recovery Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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2021
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Legal Events
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
CB03 | Change of inventor or designer information | ||
CB03 | Change of inventor or designer information |
Inventor after: Yue Weiping Inventor after: Lin Guihao Inventor before: Yue Weiping Inventor before: Lin Guihao Inventor before: Zhang Guidong |
|
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 518000 functional supporting area B, Taohuayuan Zhichuang Town, Tiegang community, Xixiang street, Bao'an District, Shenzhen, Guangdong 101201301 Patentee after: Shenzhen Hengyunchang Vacuum Technology Co.,Ltd. Country or region after: China Address before: 518000 functional supporting area B, Taohuayuan Zhichuang Town, Tiegang community, Xixiang street, Bao'an District, Shenzhen, Guangdong 101201301 Patentee before: SHENZHEN HENGYUNCHANG VACUUM TECHNOLOGY CO.,LTD. Country or region before: China |