CN216648288U

CN216648288U - Semiconductor field effect MOSFET diode

Info

Publication number: CN216648288U
Application number: CN202123151498.6U
Authority: CN
Inventors: 劳廉旭; 洪盛兰
Original assignee: Shenzhen Dengchenyi Technology Co ltd
Current assignee: Shenzhen Dengchenyi Technology Co ltd
Priority date: 2021-12-15
Filing date: 2021-12-15
Publication date: 2022-05-31
Anticipated expiration: 2031-12-15

Abstract

The utility model provides a semiconductor field effect MOSFET diode, which comprises a mounting rack, a main body, a right pin, a fixed pin and a movable pin, the two sides of the main body are symmetrically and fixedly provided with movable plates, the two sides of the mounting rack are symmetrically provided with limiting chutes, the semiconductor field effect MOSFET diode has the advantages that the effective length and angle of the movable pin and the fixed pin can be conveniently adjusted through the sliding of the movable pin and the sliding rod in the fixed pin, the semiconductor field effect MOSFET diode does not need to be trimmed and is convenient to use, the protection of the main body can be increased through the mounting frame, the phenomenon that when the main body is welded or taken down is avoided, the main body is damaged, when the main body is taken down, only the butt welding point is heated, the main body and the movable plate rise under the elasticity of the spring and are separated from the circuit board, the operation is simple, the practicability is high, and conveniently dispel the heat to the main part through recess and mounting bracket, can improve this MOSFET diode life.

Description

Semiconductor field effect MOSFET diode

Technical Field

The utility model relates to the technical field of MOSFET (metal oxide semiconductor field effect transistor) diodes, in particular to a semiconductor field effect MOSFET diode.

Background

The MOSFET diode is metal, oxide, semiconductor field effect transistor, or is called metal-insulator, semiconductor, the MOSFET diode simple structure, high durability and convenient operation, the volume of electronic component such as MOSFET diode is less in electronic manufacturing industry, when welding it, can use tweezers etc. to carry out centre gripping usually, tools such as tweezers can cause the damage to the MOSFET diode, lead to the MOSFET diode to damage unable the use, and can't fix a position and spacing to the MOS pipe, the MOSFET diode is the beading on the circuit board, the pin of MOSFET diode is longer, need prune, need use the tool when taking off the MOSFET diode, the operation is inconvenient.

To this end, the present invention provides a semiconductor field effect MOSFET diode.

SUMMERY OF THE UTILITY MODEL

Aiming at the defects in the prior art, the utility model aims to provide a semiconductor field effect MOSFET diode to solve the problems in the background technology, and the semiconductor field effect MOSFET diode can adjust the effective lengths of a movable pin and a fixed pin, is convenient to separate a main body from a bonding pad on a circuit board, is simple to operate and convenient to use, and can prolong the service life of the semiconductor field effect MOSFET diode.

In order to achieve the purpose, the utility model is realized by the following technical scheme: the utility model provides a semiconductor field effect MOSFET diode, includes mounting bracket, main part, right pin, fixed pin and activity pin, the bilateral symmetry fixed mounting of main part has the fly leaf, spacing spout has been seted up to the bilateral symmetry of mounting bracket, the main part is passed through fly leaf movable mounting in the inside of mounting bracket, fly leaf slidable mounting is in the inside of spacing spout, the one end fixed mounting of main part has right pin, the other end equidistance fixed mounting of main part has fixed pin, the pin spout has been seted up to the both ends symmetry of fixed pin, the bilateral symmetry fixed mounting of the one end of activity pin has the slide bar, the one end of activity pin is passed through the inside of slide bar movable mounting at fixed pin.

As a preferred embodiment of the present invention, grooves are symmetrically formed on both sides of the bottom of the mounting frame.

As a preferred embodiment of the present invention, sliding grooves are symmetrically formed on both sides of an inner wall of the limiting sliding groove, and both ends of the movable plate are slidably mounted inside the sliding grooves.

In a preferred embodiment of the present invention, the movable plate is cross-shaped, and a spring is fixedly mounted at the bottom of the movable plate and is fixedly mounted inside the limiting chute.

In a preferred embodiment of the present invention, the fixing pins have a shape of "U" in a top view, and the number of the fixing pins is 3.

As a preferred embodiment of the present invention, the slide bar is slidably mounted inside the pin chute.

The utility model has the beneficial effects that: according to the semiconductor field effect MOSFET diode, the effective length and angle of the movable pin and the fixed pin can be conveniently adjusted through the sliding of the movable pin and the sliding rod in the fixed pin, the movable pin and the fixed pin do not need to be trimmed, the use is convenient, the protection of the main body can be increased through the mounting frame, the main body is prevented from being damaged when the main body is welded or taken down, when the main body is taken down, only the butt welding point is required to be heated, the main body and the movable plate rise under the elasticity of the spring and are separated from the circuit board, the operation is simple, the practicability is high, the heat dissipation of the main body is facilitated through the groove and the mounting frame, and the service life of the MOSFET diode can be prolonged.

Drawings

FIG. 1 is a schematic view of a semiconductor field effect MOSFET diode structure according to the present invention;

FIG. 2 is a cross-sectional view of a MOSFET diode according to the present invention;

in the figure: 1. a mounting frame; 2. a main body; 3. a right pin; 4. fixing the pins; 5. a movable pin; 6. a pin chute; 7. a movable plate; 8. a limiting chute; 9. a spring; 10. a groove; 11. a slide bar.

Detailed Description

In order to make the technical means, the creation characteristics, the achievement purposes and the effects of the utility model easy to understand, the utility model is further described with the specific embodiments.

Referring to fig. 1 to 2, the present invention provides a technical solution: a semiconductor field effect MOSFET diode comprises a mounting frame 1, a main body 2, a right pin 3, a fixed pin 4 and a movable pin 5, wherein a movable plate 7 is fixedly arranged at two sides of the main body 2 symmetrically, a limit chute 8 is arranged at two sides of the mounting frame 1 symmetrically, the main body 2 is movably arranged in the mounting frame 1 through the movable plate 7, the movable plate 7 is slidably arranged in the limit chute 8, the right pin 3 is fixedly arranged at one end of the main body 2, the fixed pin 4 is fixedly arranged at the other end of the main body 2 at equal intervals, pin chutes 6 are symmetrically arranged at two ends of the fixed pin 4, a slide bar 11 is fixedly arranged at two sides of one end of the movable pin 5 symmetrically, one end of the movable pin 5 is movably arranged in the fixed pin 4 through the slide bar 11, and the effective lengths and angles of the movable pin 5 and the fixed pin 4 can be adjusted, the main part 2 is conveniently welded, the use is convenient, and the practicability is high.

As a preferred embodiment of the present invention, the mounting frame 1 is symmetrically provided with grooves 10 at two sides of the bottom thereof, so as to facilitate heat dissipation of the main body 2.

In a preferred embodiment of the present invention, sliding grooves are symmetrically formed on both sides of an inner wall of the limiting sliding groove 8, and both ends of the movable plate 7 are slidably mounted inside the sliding grooves to limit the movable plate 7.

In a preferred embodiment of the present invention, the movable plate 7 is cross-shaped, a spring 9 is fixedly mounted at the bottom of the movable plate 7, and the spring 9 is fixedly mounted inside the limiting chute 8, so as to facilitate the bouncing of the main body 2.

As a preferred embodiment of the present invention, the fixed pins 4 are U-shaped in top view, and the number of the fixed pins 4 is 3, so as to facilitate sliding of the movable pins 5.

In a preferred embodiment of the present invention, the sliding rod 11 is slidably mounted inside the pin sliding groove 6, and can limit the position of the movable pin 5.

When the semiconductor field effect MOSFET is used, when the MOSFET is welded, the movable pin 5 is rotated and slid, the movable pin 5 drives the slide rod 11, the slide rod 11 slides in the pin chute 6 to adjust the effective lengths of the movable pin 5 and the fixed pin 4 and adjust the angle of the movable pin 5, the MOSFET is placed at a position to be welded through the mounting rack 1, one end of the movable pin 5 is contacted with a bonding pad, the main body 2 is pressed downwards by using a soft tool, the main body 2 drives the movable plate 7, the movable plate 7 slides in the limiting chute 8 and the chute, meanwhile, the spring 9 is compressed, the main body 2 drives the right pin 3 and the fixed pin 4 to be contacted with a circuit board, the movable pin 5 and the fixed pin 4 are welded and fixed through soldering tin, the movable pin 5 and the right pin 3 are welded on the bonding pad, when the MOSFET is required to be taken down, the movable pin 5 and the right pin 3 are directly heated, after the soldering tin is melted, the main body 2 and the movable plate 7 move upwards under the elasticity of the spring 9, so that the right pin 3 and the movable pin 5 are respectively separated from the bonding pad, the semiconductor field effect MOSFET diode is convenient to adjust the effective length and angle of the movable pin 5 and the fixed pin 4 through the sliding of the movable pin 5 and the sliding rod 11 in the fixed pin 4 without trimming, is convenient to use, the protection of the main body 2 can be increased by the mounting frame 1, and the main body 2 is prevented from being damaged when being welded or removed, the main body 2 is damaged, only the butt welding point is heated, the main body 2 and the movable plate 7 rise under the elasticity of the spring 9 and are separated from the circuit board, the operation is simple, the practicability is high, and the main body 2 is conveniently radiated through the groove 10 and the mounting rack 1, so that the service life of the MOSFET diode can be prolonged.

Furthermore, it should be understood that although the present specification describes embodiments, not every embodiment includes only a single embodiment, and such description is for clarity purposes only, and it is to be understood that all embodiments may be combined as appropriate by one of ordinary skill in the art to form other embodiments as will be apparent to those of skill in the art from the description herein.

Claims

1. A semiconductor field effect MOSFET diode comprises a mounting rack (1), a main body (2), a right pin (3), a fixed pin (4) and a movable pin (5), and is characterized in that a movable plate (7) is fixedly mounted on two sides of the main body (2), a limiting chute (8) is formed in two sides of the mounting rack (1), the main body (2) is movably mounted in the mounting rack (1) through the movable plate (7), the movable plate (7) is slidably mounted in the limiting chute (8), the right pin (3) is fixedly mounted at one end of the main body (2), the fixed pin (4) is fixedly mounted at the other end of the main body (2) at equal intervals, pin chutes (6) are symmetrically formed in two ends of the fixed pin (4), and a sliding rod (11) is fixedly mounted at two sides of one end of the movable pin (5), one end of the movable pin (5) is movably arranged in the fixed pin (4) through a sliding rod (11).

2. A semiconductor field effect MOSFET diode according to claim 1, wherein: grooves (10) are symmetrically formed in the two sides of the bottom of the mounting rack (1).

3. A semiconductor field effect MOSFET diode according to claim 1, wherein: the sliding grooves are symmetrically formed in two sides of the inner wall of the limiting sliding groove (8), and two ends of the movable plate (7) are slidably mounted inside the sliding grooves.

4. A semiconductor field effect MOSFET diode according to claim 1, wherein: the movable plate (7) is cross-shaped, a spring (9) is fixedly mounted at the bottom of the movable plate (7), and the spring (9) is fixedly mounted inside the limiting sliding groove (8).

5. A semiconductor field effect MOSFET diode according to claim 1, wherein: the top view shape of the fixed pins (4) is U-shaped, and the number of the fixed pins (4) is 3.

6. A semiconductor field effect MOSFET diode according to claim 1, wherein: the sliding rod (11) is slidably mounted inside the pin sliding groove (6).