CN216563160U

CN216563160U - Electrode interconnection sheet and thin film type semiconductor array

Info

Publication number: CN216563160U
Application number: CN202122876413.4U
Authority: CN
Inventors: 吴志猛; 王伟明; 李华
Original assignee: Shanghai Gallium Core Technology Co ltd
Current assignee: Shanghai Gallium Core Technology Co ltd
Priority date: 2021-11-19
Filing date: 2021-11-19
Publication date: 2022-05-17
Anticipated expiration: 2031-11-19

Abstract

The present invention relates to an electrode interconnection sheet and a thin film type semiconductor array. The electrode interconnection sheet includes a stress absorbing portion, a first electrode connection portion, and a second electrode connection portion; wherein, the stress absorbing part is provided with a hollow pattern. The electrode interconnection sheet can eliminate material fatigue caused by the influence of thermal stress, generate cracks and completely break, and can also avoid welding spot damage caused by the action of thermal stress; further, the performance degradation of the thin film type semiconductor array caused thereby is avoided. The present invention also relates to a thin film type semiconductor array containing the electrode interconnection sheet.

Description

Electrode interconnection sheet and thin film type semiconductor array

Technical Field

The present invention relates to the field of thin film type semiconductors applied to which the external environmental temperature has a significant variation; and particularly to an electrode interconnection sheet for a thin film type semiconductor, and also to a thin film type semiconductor array to which the electrode interconnection sheet is applied.

Background

Because the thin-film solar cell has the unique characteristics of light permeability, color adjustment, flexible substrate adoption, flexibility, sticking installation, weak light power generation and the like, the thin-film solar cell becomes one of the mainstream development directions of the current photovoltaic industry.

In particular, thin film photovoltaic cells are an important component of spacecraft energy systems. Take a Low Earth Orbit satellite (Low Earth Orbit Sattelite, abbreviated LEO) as an example: low orbit, also known as near-earth orbit, has not been recognized as strictly defined; generally, a near-circular orbit with the orbit height below 2000 kilometers can be called a near-earth orbit. In a space environment, LEOs orbit near the ground, generally 500-2000 kilometers away from the ground, and the orbit period is usually 90 minutes, so that the LEOs are subjected to temperature alternation of +100 ℃ to-100 ℃ for about 16 times in 24 hours and are subjected to temperature alternation of about 5800 times per year. Similarly, the low temperature of Geostationary Orbit (GEO) Orbit is close to-180 ℃. Thus, the thin film photovoltaic cell attached to the surface of the aircraft running in the space is inevitably affected by thermal stress in the face of frequent, severe and periodic external temperature changes, and further, the efficiency of the thin film photovoltaic cell array is reduced. One of the reasons for the reduced efficiency is that the electrode interconnection sheet welded for electrical connection between adjacent cells in the photovoltaic cell array is frequently, severely and periodically stretched and compressed under thermal stress, resulting in fatigue of the material itself of the electrode interconnection sheet. Under the action of cyclic stress or cyclic strain, the electrode interconnection sheet gradually generates local permanent accumulated damage at one or more positions, and cracks, complete fracture or welding point open welding are generated after a certain cycle number, so that the performance of the photovoltaic cell array is reduced.

In the prior art, the electrode interconnection sheet used in the germanium battery is in the shape of an Omega ring; the structure can deform under the action of thermal stress, and thermal deformation and thermal adaptation in the horizontal direction are eliminated. However, the conventional Omega ring height is about 0.5mm, and the thickness of the thin film type photovoltaic cell is 50 μm or less. The Omega ring cannot be directly applied to a thin film type photovoltaic cell array if an ultra-thin packaging manner is adopted. In addition, a wave-shaped bending part is designed on the electrode interconnection sheet; the wave-shaped bent portion is equivalent to a plurality of Omega rings connected in series when viewed in cross section, and is not suitable for application scenarios of thin film semiconductors. Moreover, the fatigue phenomenon of the material itself cannot be avoided, and the precision is high and the processing and manufacturing difficulty is large.

SUMMERY OF THE UTILITY MODEL

An object of the present invention is to provide an electrode interconnection sheet for a thin film type semiconductor and a thin film type semiconductor array, which can eliminate material fatigue, crack generation, and complete fracture of the electrode interconnection sheet due to thermal stress; the thermal stress causes damage to the welding spot; further, the performance degradation of the thin film type semiconductor array caused thereby is avoided.

The application achieves the purpose through the following technical scheme:

an electrode interconnection sheet for a thin film type semiconductor, comprising a stress absorbing portion having a hollowed pattern; a first electrode connection part connected to a first end of the stress absorbing part; and a second electrode connection part connected with the second end of the stress absorbing part.

According to an electrode interconnection sheet for a thin film type semiconductor of an embodiment of the present application, the stress absorbing part includes a bow shape, an i shape, a feng shape, a diamond shape, an O shape, a double ring shape, or an S shape.

According to an electrode interconnection sheet for a thin film type semiconductor of one embodiment of the present application, the corners of the stress absorbing portions each adopt an arc-shaped structure.

According to an embodiment of the present application, the electrode interconnection sheet for a thin film type semiconductor is integrally formed.

An electrode interconnection sheet for a thin film type semiconductor according to one embodiment of the present application, the electrode interconnection sheet having a thickness ranging from 1 μm to 100 μm.

According to an embodiment of the present application, an electrode interconnection sheet for a thin film type semiconductor, which is electrically connected to a corresponding electrode of the thin film type semiconductor, includes a conductive paste or solder.

An electrode interconnection sheet for a thin film type semiconductor according to an embodiment of the present application, the electrode mainly consists of silver, oxygen-free copper, aluminum, silver-plated molybdenum, silver-plated kovar alloy, silver-plated copper beryllium alloy, transparent graphene, a conductive polymer, a carbon nanotube, or a silver nanowire.

According to an electrode interconnection sheet for a thin film type semiconductor of an embodiment of the present application, a method of preparing the stress absorbing portion includes: etching, mechanical die cutting or laser cutting.

An electrode interconnection sheet for a thin film type semiconductor array, comprising at least two of the electrode interconnection sheets, characterized in that first electrode connection parts of the at least two electrode interconnection sheets are connected to each other and/or second electrode connection parts thereof are connected to each other.

A thin film type semiconductor array comprising at least two thin film type semiconductors, characterized by further comprising any one of said electrode interconnection pieces for electrically connecting said at least two thin film type semiconductors.

A thin film type semiconductor array of coplanar electrodes comprising at least two thin film type semiconductors of coplanar electrodes, characterized by having at least one electrode interconnection sheet as described in any one of the above, wherein said electrode interconnection sheet is integrally formed with the thin gate lines and the main gate lines of said thin film type semiconductor of said at least one coplanar electrode.

According to an embodiment of the present application, the thin gate line and the main gate line of the co-planar electrode thin film semiconductor array are mainly made of transparent graphene.

The utility model has the beneficial effects that:

firstly, frequent, violent and periodic stretching and compression under the action of thermal stress are counteracted through a stress absorption part of the electrode interconnection sheet, and the fracture phenomenon of the electrode interconnection sheet caused by material fatigue is avoided.

Second, thermal stress is eliminated from damaging the solder joints connecting the electrode interconnection sheet and the thin film type semiconductor electrodes.

Thirdly, simple structure, easy processing and low manufacturing cost.

Drawings

Fig. 1A is a front view of one embodiment of an electrode interconnection sheet for a thin film type semiconductor according to the present invention;

fig. 1B is a side view of the electrode of the two thin film type semiconductors connected in series in this embodiment;

FIG. 2 is a front view of an I-shaped embodiment according to the present invention;

FIG. 3 is a front view of an embodiment in a chevron shape according to the present invention;

FIG. 4 is a front view of a rhombus-shaped embodiment according to the utility model;

FIG. 5 is a front view of an embodiment in an O-shape according to the present invention;

FIG. 6 is a front view of an embodiment according to the utility model in double loop form;

FIG. 7 is a front view of an S-shaped embodiment according to the present invention;

fig. 8 is a thin film type semiconductor array having an electrode interconnection sheet of the present invention;

fig. 9 is an electrode interconnection sheet array according to still another embodiment of the present invention.

Detailed Description

The following examples are intended to better understand the nature of the utility model and are not intended to limit the utility model to the described examples. Furthermore, the terms "first" and "second" are used to distinguish one description from another, and are not to be construed as indicating or implying relative importance. The utility model will be further described with reference to the accompanying drawings in which:

fig. 1A shows a first embodiment 100 of the electrode interconnection sheet for thin film type semiconductors of the present invention, adapted to connect 2 electrodes of thin film type semiconductors, comprising a stress absorbing portion 102, and a first electrode connection portion 101 and a second electrode connection portion 103; the electrode connection portion 101 and the electrode connection portion 103 are connected to a first end portion and a second end portion of the stress absorbing portion 102, respectively. In the present embodiment, the first electrode connection portion 101, the stress absorbing portion 102, and the second electrode connection portion 103 are integrally formed. The stress absorbing portion 102 has a bow shape, and absorbs tensile or compressive stress from the first electrode connecting portion 101 and the second electrode connecting portion 103 by deformation of the stress absorbing portion.

Fig. 1B shows that the electrode interconnection sheet 100 connects two thin film type semiconductors in series; the first electrode connection 101 is connected to a main gate 105 of the first thin film semiconductor 1, which is positively charged, and the second electrode connection 103 is connected to a back electrode 104 of the second thin film semiconductor 2, which is negatively charged. At this time, the first thin film semiconductor 1 and the second thin film semiconductor 2 form a series structure. Since the thin film type semiconductor has a thickness, the electrode interconnection sheet 100 is subjected to bending deformation.

When the thin film type semiconductor is in an environment with high and low temperature changes, the temperature changes of the external environment can cause the thin film type semiconductor to expand with heat and contract with cold; in addition, the heating effect of the thin film semiconductor in the working process can widen or reduce the distance between adjacent thin film semiconductors under the combined action of two factors. At this time, the stress absorbing portion of the electrode interconnection sheet having the hollow pattern may be structurally deformed. Therefore, the electrode interconnection sheet can withstand fatigue damage without breaking or damaging the connection point with the thin film semiconductor electrode in a certain period. When stress occurs, the bow-shaped stress absorbing portion 102 of the first embodiment 100 is deformed. Thus, damage to the thin film type semiconductor itself and the bonding position during the stretching or compressing of the electrode interconnection sheet 100 is avoided. In particular, in order to further prevent the stress absorbing portion 102 from being torn due to deformation, the corners of the bow shape are all arc-shaped.

The electrode interconnection sheet 100 may be made of metal having a thickness of 1 to 100 μm, and electrically connected to a corresponding electrode of the thin film semiconductor by soldering or using a conductive adhesive; the electrode interconnection sheet 100 is processed by means of integrated molding such as etching, mechanical punching, laser cutting and the like, so that the edge of the bow-shaped stress absorption part 102 of the electrode interconnection sheet 100 has no defects such as burrs, right-angle edges, cracks, surface damage and the like. In addition, the electrode interconnection sheet 100 may also be made of silver, oxygen-free copper, aluminum, silver-plated molybdenum, silver-plated kovar, silver-plated copper beryllium, transparent graphene, conductive polymer, carbon nanotubes, silver nanowires, or the like.

As shown in fig. 2 to 7, the present invention may be an electrode interconnection sheet having an i-shaped, a fogged-shaped, a diamond-shaped, an O-shaped, a double-ring-shaped or an S-shaped stress absorbing portion according to the difference of the hollow patterns of the stress absorbing portion of the electrode interconnection sheet.

As shown in fig. 8, after the PN junction growth is completed, thin film semiconductors using coplanar electrodes are arranged at a certain pitch to form an array. By combining with a photolithography process, a first electrode connecting portion and a second electrode connecting portion of the electrode interconnection sheet are prepared while growing the thin gate line 11 and the main gate electrode 12 by methods of evaporation, sputtering, chemical vapor deposition, electroplating, and the like. At this time, the thin gate line 11, the main gate electrode 12, and the electrode interconnection piece 3 are integrated, and no welding or other processes are required to achieve electrical connection, and the isolation region 10 is used to separate the positive and negative electrodes. The film-type semiconductor of the coplanar electrode can adopt graphene, and the thin grid line 11 and the main grid 12 still need to be separated into a positive electrode and a negative electrode by an isolation region after being made of transparent graphene.

In the context of some thin film type semiconductor applications, the need for a common cathode and/or a common anode, i.e. the connection of the first electrode connections of a plurality of electrode interconnection sheets and/or the connection of the second electrode connections thereof, often arises, as shown in fig. 9.

The above embodiments are only preferred embodiments of the present invention, and are not intended to limit the technical solutions of the present invention, so long as the technical solutions can be realized on the basis of the above embodiments without creative efforts, which should be considered to fall within the protection scope of the patent of the present invention.

Claims

1. An electrode interconnection sheet for a thin film type semiconductor, characterized in that,

the stress absorption part is provided with a hollow pattern;

a first electrode connection part connected to a first end of the stress absorbing part; and the number of the first and second groups,

a second electrode connection part connected with the second end of the stress absorbing part.

2. The electrode interconnection sheet for a thin film type semiconductor according to claim 1, wherein: the stress absorbing part comprises an arch shape, an I shape, a Chinese character feng shape, a diamond shape, an O shape, a double-ring shape or an S shape.

3. The electrode interconnection sheet for a thin film type semiconductor according to claim 2, wherein: the corners of the stress absorption parts are all arc-shaped structures.

4. The electrode interconnection sheet for a thin film type semiconductor according to claim 3, wherein: the electrode interconnection sheet for a thin film type semiconductor is integrally formed.

5. The electrode interconnection sheet for a thin film type semiconductor according to claim 4, wherein: thickness range of the electrode interconnection sheet: 1-100 μm.

6. The electrode interconnection sheet for a thin film type semiconductor according to claim 5, wherein the electrical connection means of the electrode interconnection sheet to the corresponding electrode of the thin film type semiconductor comprises a conductive paste or solder.

7. The electrode interconnection sheet for a thin film type semiconductor according to claim 6, wherein: the electrode mainly comprises silver, oxygen-free copper, aluminum, silver-plated molybdenum, silver-plated kovar alloy, silver-plated copper beryllium alloy, transparent graphene, a conductive polymer, a carbon nano tube or a silver nano wire.

8. The electrode interconnection sheet for a thin film type semiconductor according to claim 7, wherein: the method for manufacturing the stress absorbing part includes: etching, mechanical die cutting or laser cutting.

9. An electrode interconnection sheet for a thin film type semiconductor array, having at least two electrode interconnection sheets according to any one of claims 1 to 8, wherein the first electrode connection parts of the at least two electrode interconnection sheets are connected to each other and/or the second electrode connection parts thereof are connected to each other.

10. A thin film type semiconductor array comprising at least two thin film type semiconductors, characterized by having at least one electrode interconnection sheet according to any one of claims 1 to 8 for electrically connecting said at least two thin film type semiconductors.

11. A thin film type semiconductor array of coplanar electrodes comprising at least two thin film type semiconductors of coplanar electrodes, characterized by having at least one electrode interconnection sheet as claimed in any one of claims 1 to 5, wherein the electrode interconnection sheet is integrally formed with the thin gate lines and the main gate lines of the thin film type semiconductor of the at least one coplanar electrode.

12. The film-type semiconductor array of coplanar electrodes as claimed in claim 11, wherein the thin gate lines and the main gate lines of the integrated electrode interconnection sheet and the film-type semiconductor array of coplanar electrodes are mainly composed of transparent graphene.