CN216491169U - Plasma generating device - Google Patents
Plasma generating device Download PDFInfo
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- CN216491169U CN216491169U CN202122616922.3U CN202122616922U CN216491169U CN 216491169 U CN216491169 U CN 216491169U CN 202122616922 U CN202122616922 U CN 202122616922U CN 216491169 U CN216491169 U CN 216491169U
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Abstract
The present invention provides a plasma generating apparatus, comprising at least: a coaxial line resonator having an open end; and the waveguide resonator is at least provided with two openings and is in conductive connection with the coaxial line resonator, and the open end of the coaxial line resonator is butted with one opening of the waveguide resonator. The plasma generating device is designed by combining the coaxial line resonator and the waveguide resonator, and the open end of the coaxial line resonator is butted with one opening of the waveguide resonator, so that electromagnetic wave can simultaneously oscillate in the coaxial line resonator and the waveguide resonator, the oscillation effect of the electromagnetic wave is strengthened, the electromagnetic wave leaving the surface of the coaxial line is strengthened, the coupling effect of the electromagnetic wave on plasma is strengthened, and the water vapor interference resistance of the electromagnetic wave is strengthened.
Description
Technical Field
The utility model relates to the technical field of spectral mass spectrometry, in particular to a plasma generating device.
Background
Plasma is a state in which a substance exists, and is widely used in techniques such as spectroscopy and mass spectrometry because a physical process capable of reacting a substance component such as dissociation, ionization, transition, and the like exists inside the plasma. The microwave plasma is a branch of the plasma technology, and researchers have disclosed the design method, and at present, there are mainly three related technical solutions: a microstrip line resonator based plasma generating device, a waveguide resonator based plasma sustaining device, and a coaxial line resonator based plasma generating device.
However, the structure and electromagnetic field distribution of the resonator in these three types of plasma generation devices are different, and plasmas with greatly different properties are generated. The device based on the microstrip line resonator and the waveguide resonator can realize better coupling of an electromagnetic field and plasma by means of a space electromagnetic field formed by the waveguide, and the development is mature at present; however, in some cases, it is preferable to use a device based on a coaxial resonator, and the electromagnetic field of the coaxial resonator is attenuated rapidly when leaving the coaxial surface, and the coupling effect to the plasma is weak, and the plasma generated by the device often has the characteristic of difficulty in resisting water vapor interference, and the actual effect is biased.
SUMMERY OF THE UTILITY MODEL
In view of the above-mentioned drawbacks of the prior art, it is an object of the present invention to provide a microwave plasma generation solution for solving the above-mentioned technical problems.
To achieve the above and other related objects, the present invention provides the following technical solutions.
A plasma-generating device comprising at least:
a coaxial line resonator having an open end;
and the waveguide resonator is at least provided with two openings and is in conductive connection with the coaxial line resonator, and the open end of the coaxial line resonator is butted with one opening of the waveguide resonator.
Optionally, the plasma generation apparatus further comprises a microwave coupling device, and the microwave coupling device is disposed in the coaxial line resonator.
Optionally, the coaxial line resonator comprises a first aperture closed-loop conductive wall surface, a second aperture closed-loop conductive wall surface and a third aperture closed-loop conductive wall surface, which are sleeved on the same central axis from outside to inside, wherein the inner diameter of the first aperture closed-loop conductive wall surface is larger than that of the second aperture closed-loop conductive wall surface, and the inner diameter of the second aperture closed-loop conductive wall surface is larger than that of the third aperture closed-loop conductive wall surface; the first aperture closed-loop conductive wall surface, the second aperture closed-loop conductive wall surface and the third aperture closed-loop conductive wall surface are arranged on one end along the central axis direction in a flush manner, and the corresponding end parts are open ends of the coaxial line resonator; the coaxial line syntonizer still includes along the radial bottom surface conductive wall that sets up of second bore closed loop conductive wall, just the bottom surface conductive wall along the direction of axis is kept away from coaxial line syntonizer's the end of opening a way sets up, the bottom surface conductive wall includes first bottom surface conductive wall and the conductive wall of second bottom surface, the one end of first bottom surface conductive wall with first bore closed loop conductive wall is connected, the other end with second bore closed loop conductive wall is connected, the one end of the conductive wall of second bottom surface with second bore closed loop conductive wall is connected, the other end with third bore closed loop conductive wall is connected.
Optionally, the first aperture closed-loop conductive wall surface is provided with a first opening, and the first opening is used for accommodating the microwave coupling device.
Optionally, the inner conductor of the microwave coupling device is radially inserted into a region between the first aperture closed-loop conductive wall surface and the second aperture closed-loop conductive wall surface through the first opening, and the inner conductor of the microwave coupling device is not in contact with the second aperture closed-loop conductive wall surface.
Optionally, the inner conductor of the microwave coupling device is radially inserted into a region between the first aperture closed-loop conductive wall surface and the second aperture closed-loop conductive wall surface through the first opening, and the inner conductor of the microwave coupling device is in ohmic contact with the second aperture closed-loop conductive wall surface.
Optionally, the bottom conductive wall surface further includes a third bottom conductive wall surface, the third bottom conductive wall surface is disposed at the other end of the second caliber closed-loop conductive wall surface, which is opposite to the open end, and one end of the third bottom conductive wall surface is connected to the second caliber closed-loop conductive wall surface, and the other end of the third bottom conductive wall surface is connected to the third caliber closed-loop conductive wall surface; a second opening is further formed in the area, close to the third bottom surface conductive wall surface, of the second caliber closed-loop conductive wall surface, and the second opening is communicated with an external airflow pipeline; and a plurality of third open holes are formed in the second bottom surface conductive wall surface.
Optionally, the waveguide resonator includes a closed conductive space, where the closed conductive space has at least a first opening and a second opening, the first opening and the second opening are disposed opposite to each other, and the first opening and the second opening are disposed on the same central axis as the closed conductive space, respectively; the first opening is in butt joint with the open end.
Optionally, the third aperture closed-loop conductive wall surface includes a hollow structure, and the hollow structure and the first opening are arranged on the same central axis to accommodate a sample introduction pipe; the tip of the sample introduction pipe is disposed flush with the open end.
Optionally, a quartz pipeline is arranged on a sidewall of a gap between the second-caliber closed-loop conductive wall surface and the third-caliber closed-loop conductive wall surface.
Optionally, a first heat dissipation hole is formed in the first bottom surface conductive wall, and a second heat dissipation hole is formed in the waveguide resonator.
Optionally, in the coaxial line resonator, an electric field of the open end is strongest; the waveguide resonator operates in the TM010 mode.
As described above, the plasma generation device provided by the present invention has at least the following beneficial effects:
the coaxial line resonator and the waveguide resonator are combined for design, and the open end of the coaxial line resonator is butted with one opening of the waveguide resonator, so that electromagnetic wave can vibrate in the coaxial line resonator and the waveguide resonator simultaneously, the vibration effect of the electromagnetic wave is strengthened, the electromagnetic wave leaving the surface of the coaxial line is strengthened, the coupling effect of the coaxial line resonator on plasma is strengthened, and the water vapor interference resistance of the coaxial line resonator is strengthened.
Drawings
Fig. 1 is a schematic structural diagram of a plasma generation apparatus according to an embodiment of the utility model.
Fig. 2 is a sectional view of a plasma generation device according to an embodiment of the present invention.
FIG. 3 is a sectional view of a plasma generator according to another embodiment of the present invention.
Description of the reference numerals
1-coaxial line resonator, 2-waveguide resonator, 3-microwave coupling device, 4-sample introduction tube, 5-quartz tube, 11-first caliber closed-loop conductive wall, 12-second caliber closed-loop conductive wall, 13-third caliber closed-loop conductive wall, 14-bottom conductive wall, 141-first bottom conductive wall, 142-second bottom conductive wall, 143-third bottom conductive wall, 31-inner conductor of microwave coupling device 3, 1A-first opening, 2A-second opening, 1B-first opening, 2B-second opening, 3B-third opening.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The utility model is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 3. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the drawings only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of each component in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated. The structures, proportions, and dimensions shown in the drawings and described in the specification are for illustrative purposes only and are not intended to limit the scope of the present invention, which is defined by the claims, so as not to obscure the disclosure with details that will be readily apparent to those skilled in the art, and it is not intended to limit the scope of the present invention to the exact construction and modification, or changes in the proportions and dimensions, without affecting the efficacy and attainment of the same.
As shown in fig. 1 and 3, the present invention provides a plasma generating apparatus, which at least comprises:
a coaxial line resonator 1 having an open end;
and the waveguide resonator 2 is provided with at least two openings and is in conductive connection with the coaxial line resonator 1, and the open end of the coaxial line resonator 1 is butted with one opening of the waveguide resonator 2, so that electromagnetic wave can oscillate in the coaxial line resonator 1 and the waveguide resonator 2 simultaneously.
In detail, as shown in fig. 2, the coaxial line resonator 1 includes a first aperture closed-loop conductive wall surface 11, a second aperture closed-loop conductive wall surface 12 and a third aperture closed-loop conductive wall surface 13 which are sleeved from outside to inside along the same central axis, the inner diameter of the first aperture closed-loop conductive wall surface 11 is greater than the inner diameter of the second aperture closed-loop conductive wall surface 12, and the inner diameter of the second aperture closed-loop conductive wall surface 12 is greater than the inner diameter of the third aperture closed-loop conductive wall surface 13; the first caliber closed-loop conductive wall surface 11, the second caliber closed-loop conductive wall surface 12 and the third caliber closed-loop conductive wall surface 13 are arranged on one end (the end close to the waveguide resonator 2) along the central axis direction in a flush manner, and the corresponding end parts are open ends of the coaxial line resonator 2; the coaxial line resonator 2 further includes a bottom conductive wall surface 14 radially disposed along the second caliber closed-loop conductive wall surface 12, the bottom conductive wall surface 14 is disposed away from the open end of the coaxial line resonator 1 along the direction of the central axis, the bottom conductive wall surface 14 includes a first bottom conductive wall surface 141 and a second bottom conductive wall surface 142, one end of the first bottom conductive wall surface 141 is connected to the first caliber closed-loop conductive wall surface 11, the other end is connected to the second caliber closed-loop conductive wall surface 12, one end of the second bottom conductive wall surface 142 is connected to the second caliber closed-loop conductive wall surface 12, and the other end is connected to the third caliber closed-loop conductive wall surface 13.
In detail, as shown in fig. 1 and 2, the plasma generation apparatus further includes a microwave coupling device 3, and the microwave coupling device 3 is disposed in the coaxial line resonator 1 to generate an electromagnetic wave (generally, a TEM wave).
In more detail, as shown in fig. 1 and 2, the first aperture closed-loop conductive wall 11 is provided with a first opening 1A, and the first opening 1A is used for accommodating the microwave coupling device 3. The microwave coupling device 3 needs to induce electromagnetic waves in the coaxial line resonator 1, and there are two ways of electric field coupling and magnetic field coupling.
Based on the electric field coupling manner, as shown in fig. 2, the inner conductor 31 of the microwave coupling device 3 passes through the first opening 1A and is radially inserted into the region between the first caliber closed-loop conductive wall surface 11 and the second caliber closed-loop conductive wall surface 12, and the inner conductor 31 of the microwave coupling device 3 is not in contact with the second caliber closed-loop conductive wall surface 12, so as to generate the electromagnetic wave by the electric field coupling manner.
Based on the magnetic field coupling manner, as shown in fig. 3, the inner conductor 31 of the microwave coupling device 3 passes through the first opening 1A and is radially inserted into the region between the first caliber closed-loop conductive wall surface 11 and the second caliber closed-loop conductive wall surface 12, and the inner conductor 31 of the microwave coupling device 3 is in ohmic contact with the second caliber closed-loop conductive wall surface 12 to generate electromagnetic waves by the magnetic field coupling manner.
In detail, as shown in fig. 1 to 3, the waveguide resonator 2 includes a closed conductive space, the closed conductive space has at least a first opening 1B and a second opening 2B, the first opening 1B and the second opening 2B are disposed opposite to each other, and the first opening 1B and the second opening 2B are disposed on the same axis as the closed conductive space respectively; the first opening 1B is butted with the open end to allow electromagnetic wave energy to oscillate simultaneously in the coaxial line resonator 1 and the waveguide resonator 2.
In more detail, as shown in fig. 1-3, the microwave coupling device 3 evokes electromagnetic waves in the coaxial line resonator 1, and the electromagnetic waves propagate between the connection of the first aperture closed-loop conductive wall surface 11 and the second aperture closed-loop conductive wall surface 12, by setting the size reasonably, the electric field at the open end of the coaxial line resonator 1 is strongest, and electromagnetic waves (TEM waves) can be coupled between the connection of the second aperture closed-loop conductive wall surface 12 and the third aperture closed-loop conductive wall surface 13 through the opening, so as to generate oscillation electromagnetic waves in the same mode; at this time, the electric field is strongest at the tip of the third-caliber closed-loop conductive wall surface 13, and the direction of the electric field diverges to the periphery with the tip of the third-caliber closed-loop conductive wall surface 13 as the center. Meanwhile, the size of the waveguide resonator 2 is reasonably set, so that the waveguide resonator works in a TM010 mode, an electric field near a central axis is strongest in the TM010 mode, the direction of the electric field is consistent with the top of the open end of the third-caliber closed-loop conductive wall surface 13, a TEM oscillation mode in the coaxial line resonator 1 can be converted into the TM010 mode, and the waveguide resonator 2 is caused to oscillate.
In more detail, as shown in fig. 1 and fig. 2, the bottom conductive wall 14 further includes a third bottom conductive wall 143, the third bottom conductive wall 143 is disposed at the other end of the second caliber closed-loop conductive wall 12 opposite to the open end, one end of the third bottom conductive wall 143 is connected to the second caliber closed-loop conductive wall 12, and the other end is connected to the third caliber closed-loop conductive wall 13; a second opening 2A is further formed in the area, close to the third bottom conductive wall surface 143, of the second caliber closed-loop conductive wall surface 12, and the second opening 2A is communicated with an external airflow pipeline; the second bottom conductive wall 142 is provided with a plurality of uniformly arranged third openings (not shown in the figure), when a sustaining gas such as argon, helium or nitrogen flows in through the gas flow pipeline, the electromagnetic field between the first caliber closed-loop conductive wall 11 and the second caliber closed-loop conductive wall 12 can form and sustain plasma, when the gas flow is introduced perpendicular to the central axis, the plasma can rotate around the central axis, the size of the gas flow is controlled, and a high-speed rotating hollow plasma can be formed, so that a sample can be introduced.
In detail, as shown in fig. 1 to 3, the third closed-loop conductive wall surface 13 includes a hollow structure, which is disposed coaxially with the first opening 1B to accommodate the sample introduction pipe 4; the tip of the sample introduction pipe 4 is disposed flush with the open end.
In more detail, as shown in fig. 1-3, the tip of the sample introduction pipe 4 is arranged approximately at the same level as the open tip of the third closed-loop conductive wall 13, the inside of the third closed-loop conductive wall 13 of the hollow structure is free from electromagnetic field, and the actual coupling area of the sample with the plasma is inside the waveguide resonator 2. In the waveguide resonator 2, when the electromagnetic field does not oscillate, the TEM mode has surface wave characteristics, the electromagnetic field decays rapidly, the plasma lacks the electromagnetic field support, the volume becomes smaller, the temperature becomes lower, and the excitation capability to the sample is reduced. When a TM 010-type mode is formed, an electromagnetic field is further propagated, the formed hollow plasma is longer, the coupling path between the plasma and a sample is longer, the temperature of the plasma is higher, the thermal excitation on the sample is more sufficient, more samples with water vapor can be borne, and stronger spectrum signals can be obtained.
In detail, as shown in fig. 3, the quartz tube 5 is disposed on a sidewall of a gap between the second-caliber closed-loop conductive wall 12 and the third-caliber closed-loop conductive wall 13, and the quartz tube 5 has a lower adhesion coefficient and is not easy to retain an analyte.
Optionally, the first bottom conductive wall 11 is provided with a plurality of first heat dissipation holes, and the waveguide resonator 2 is provided with a second heat dissipation hole (for example, a third opening 3B formed in the sidewall) to improve the heat dissipation capability inside the resonator.
In summary, in the plasma generating device provided by the present invention, the coaxial line resonator and the waveguide resonator are combined to perform a device structure design, and the open end of the coaxial line resonator is butted with one opening of the waveguide resonator, so that the electromagnetic wave can oscillate in the coaxial line resonator and the waveguide resonator simultaneously, the oscillation effect of the electromagnetic wave is enhanced, the electromagnetic wave leaving the surface of the coaxial line is enhanced, the coupling effect of the coaxial line resonator to the plasma is enhanced, and the water-vapor interference resistance of the coaxial line resonator is enhanced.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the utility model. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (12)
1. A plasma-generating device, characterized by comprising at least:
a coaxial line resonator having an open end;
and the waveguide resonator is at least provided with two openings and is in conductive connection with the coaxial line resonator, and the open end of the coaxial line resonator is butted with one opening of the waveguide resonator.
2. The plasma generating apparatus according to claim 1, further comprising a microwave coupling device disposed in the coaxial line resonator.
3. The plasma generation device according to claim 2, wherein the coaxial line resonator includes a first aperture closed-loop conductive wall surface, a second aperture closed-loop conductive wall surface, and a third aperture closed-loop conductive wall surface that are sleeved from outside to inside along the same central axis, wherein an inner diameter of the first aperture closed-loop conductive wall surface is larger than an inner diameter of the second aperture closed-loop conductive wall surface, and an inner diameter of the second aperture closed-loop conductive wall surface is larger than an inner diameter of the third aperture closed-loop conductive wall surface; the first aperture closed-loop conductive wall surface, the second aperture closed-loop conductive wall surface and the third aperture closed-loop conductive wall surface are arranged on one end along the central axis direction in a flush manner, and the corresponding end parts are open ends of the coaxial line resonator; the coaxial line syntonizer still includes along the radial bottom surface conductive wall that sets up of second bore closed loop conductive wall, just the bottom surface conductive wall along the direction of axis is kept away from coaxial line syntonizer's the end of opening a way sets up, the bottom surface conductive wall includes first bottom surface conductive wall and the conductive wall of second bottom surface, the one end of first bottom surface conductive wall with first bore closed loop conductive wall is connected, the other end with second bore closed loop conductive wall is connected, the one end of the conductive wall of second bottom surface with second bore closed loop conductive wall is connected, the other end with third bore closed loop conductive wall is connected.
4. The plasma generation apparatus of claim 3, wherein the first aperture closed-loop conductive wall is provided with a first opening for receiving the microwave coupling device.
5. The plasma generating apparatus according to claim 4, wherein the inner conductor of the microwave coupling device is radially inserted through the first opening into a region between the first aperture closed-loop conductive wall and the second aperture closed-loop conductive wall, and the inner conductor of the microwave coupling device is not in contact with the second aperture closed-loop conductive wall.
6. The plasma generating apparatus according to claim 4, wherein the inner conductor of the microwave coupling device is inserted radially through the first opening into a region between the first aperture closed-loop conductive wall and the second aperture closed-loop conductive wall, and the inner conductor of the microwave coupling device is in ohmic contact with the second aperture closed-loop conductive wall.
7. The plasma generation apparatus according to claim 5 or 6, wherein the bottom conductive wall surface further includes a third bottom conductive wall surface, the third bottom conductive wall surface is provided at the other end of the second aperture closed-loop conductive wall surface, which is opposite to the open end, and one end of the third bottom conductive wall surface is connected to the second aperture closed-loop conductive wall surface and the other end is connected to the third aperture closed-loop conductive wall surface; a second opening is further formed in the area, close to the third bottom surface conductive wall surface, of the second caliber closed-loop conductive wall surface, and the second opening is communicated with an external airflow pipeline; and a plurality of third open holes are formed in the second bottom surface conductive wall surface.
8. The plasma generation apparatus of claim 7, wherein the waveguide resonator comprises a closed conductive space having at least a first opening and a second opening, the first opening is disposed opposite to the second opening, and the first opening and the second opening are disposed on the same axis as the closed conductive space, respectively; the first opening is in butt joint with the open end.
9. The plasma generation apparatus of claim 8, wherein the third closed-loop conductive wall comprises a hollow structure concentric with the first opening to accommodate a sample introduction conduit; the tip of the sample introduction pipe is disposed flush with the open end.
10. The plasma generation apparatus as claimed in claim 9, wherein a quartz pipe is provided on a sidewall of a gap between the second-caliber closed-loop conductive wall surface and the third-caliber closed-loop conductive wall surface.
11. The plasma generation apparatus according to claim 10, wherein a first heat dissipation hole is provided on the first bottom conductive wall surface, and a second heat dissipation hole is provided on the waveguide resonator.
12. The plasma generating apparatus according to any one of claims 1 to 11, wherein in the coaxial line resonator, an electric field of the open end is strongest; the waveguide resonator operates in the TM010 mode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122616922.3U CN216491169U (en) | 2021-10-28 | 2021-10-28 | Plasma generating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122616922.3U CN216491169U (en) | 2021-10-28 | 2021-10-28 | Plasma generating device |
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| Publication Number | Publication Date |
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| CN216491169U true CN216491169U (en) | 2022-05-10 |
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| CN202122616922.3U Active CN216491169U (en) | 2021-10-28 | 2021-10-28 | Plasma generating device |
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| CN (1) | CN216491169U (en) |
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2021
- 2021-10-28 CN CN202122616922.3U patent/CN216491169U/en active Active
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