CN216389426U - Thin film material structure for InSb magnetic sensor - Google Patents

Thin film material structure for InSb magnetic sensor Download PDF

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Publication number
CN216389426U
CN216389426U CN202122834444.3U CN202122834444U CN216389426U CN 216389426 U CN216389426 U CN 216389426U CN 202122834444 U CN202122834444 U CN 202122834444U CN 216389426 U CN216389426 U CN 216389426U
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ceramic substrate
thin film
layer
substrate layer
insb
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胡苹
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Huizhou University
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Huizhou University
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Abstract

The utility model discloses a thin film material structure for an InSb magnetic sensor, which comprises a ceramic substrate layer, wherein a covering layer is arranged at the top of the ceramic substrate layer, an insulating layer is arranged on the covering layer, and a thin film layer is paved on the insulating layer; further comprising: the air holes penetrate through the ceramic substrate layer, and a metal bottom plate is fixed at the bottom of the ceramic substrate layer; the supporting bar, the supporting bar is fixed in the bottom of insulating layer, and the supporting bar is located and supports the inslot to support the top that the groove was seted up in the overburden, support the bottom in groove moreover and placed the pressure pad. This a thin film material structure for InSb magnetic sensor, metal film through ceramic substrate layer bottom cooperates wear-resisting head, increases the wear resistance of ceramic substrate layer, takes place wearing and tearing when avoiding installing with the motor contact to cooperate the bleeder vent to improve the radiating effect of ceramic substrate layer, carry out the pressure-bearing buffering through support bar and pressure-bearing pad simultaneously, improve whole compressive property.

Description

Thin film material structure for InSb magnetic sensor
Technical Field
The utility model relates to the technical field of InSb magnetic sensitive devices, in particular to a thin film material structure for an InSb magnetic sensitive device.
Background
The InSb magnetic sensitive device is used for various functional instruments in the semiconductor technology, and comprises electrodes, leads and an InSb thin film in the use of the InSb magnetic sensitive device, wherein the use of the InSb thin film is particularly important, but the following problems exist in the use of the existing InSb thin film material structure:
the installation of InSb magnetic sensor, need place the bottom of InSb thin film material structure and carry out the routing operation on the electrode, add man-hour, take place wearing and tearing easily, current InSb thin film material structure, inconvenient improvement wear resistance, it is great to lead to the material loss rate, influence normal use, the InSb magnetic sensor who comprises InSb thin film material structure simultaneously, receive external pressure easily when installation and use, current InSb thin film material structure, inconvenient resistance to compression protection, easily receive the pressure damage, influence life.
Aiming at the problems, innovative design is urgently needed on the basis of the structure of the original InSb film material.
SUMMERY OF THE UTILITY MODEL
The utility model aims to provide a thin film material structure for an InSb magnetic sensor, which aims to solve the problems that the prior InSb thin film material structure is inconvenient to improve the wear-resisting property and carry out compression-resistant protection.
In order to achieve the purpose, the utility model provides the following technical scheme: a thin film material structure for an InSb magnetic sensor comprises a ceramic substrate layer, wherein a covering layer is arranged on the top of the ceramic substrate layer, an insulating layer is arranged on the covering layer, and a thin film layer is paved on the insulating layer;
further comprising:
the air holes penetrate through the ceramic substrate layer, and a metal bottom plate is fixed at the bottom of the ceramic substrate layer;
the supporting bar, the supporting bar is fixed in the bottom of insulating layer, and the supporting bar is located and supports the inslot to support the top that the groove was seted up in the overburden, support the bottom in groove moreover and placed the pressure pad.
Preferably, the covering layer and the insulating layer are respectively made of Bi-sb alloy materials and zirconium dioxide materials, the ceramic substrate layer is covered by the Bi-sb alloy materials, the doping effect of the ceramic substrate layer is avoided, and meanwhile, the covering layer and the thin film layer are effectively and stably insulated by the zirconium dioxide.
Preferably, the air holes are distributed in the ceramic substrate layer at equal intervals, the overlooking cross section of each air hole is distributed in a winding structure, the air holes are distributed in a winding manner, the air permeation area is increased, and the ceramic substrate layer is rapidly radiated.
Preferably, the metal bottom plates are distributed at the bottom of the ceramic substrate layer at equal intervals, the metal bottom plates are in an inverted arc-shaped structure design, and the metal bottom plates are in contact with the motor, so that the ceramic substrate layer is prevented from being damaged by friction.
Preferably, the bottom of the metal bottom plate is provided with wear-resistant heads at equal angles, the wear-resistant heads are designed to be of a hemispherical structure, and the wear-resistant heads can increase the friction force of the metal bottom plate.
Preferably, the support bars are distributed at the bottom of the insulating layer at equal intervals, the side edges of the support bars are matched with the support grooves in a concave-convex mode, the support bars are inserted into the support grooves, the contact area of the insulating layer and the covering layer is increased, and the overall stability is improved.
Preferably, the pressure pad adopts the silica gel material of arc structure, and the top and the support bar bottom cambered surface of pressure pad laminate mutually, and the pressure pad receives support bar pressure deformation, cushions the protection to the support bar, and then cushions the protection to insulating layer and overburden.
Compared with the prior art, the utility model has the beneficial effects that: the wear-resisting property of the ceramic substrate layer is improved by matching the metal bottom sheet at the bottom of the ceramic substrate layer with the wear-resisting head, the wear is avoided when the ceramic substrate layer is in contact with a motor for installation, the heat dissipation effect of the ceramic substrate layer is improved by matching with the air holes, and meanwhile, the whole compression-resisting property is improved by carrying out pressure-bearing buffering through the supporting bars and the pressure-bearing pads;
1. the metal bottom sheet arranged at the bottom of the ceramic substrate layer is of an inverted arc structure, so that when the ceramic substrate layer is installed, the metal bottom sheet can be in contact with the electrode plate, the ceramic substrate layer is prevented from being in direct contact, friction is reduced, and the wear resistance of the metal bottom sheet is improved through the wear-resistant head of the hemispherical structure at the bottom of the metal bottom sheet;
2. the supporting bars arranged at the bottom of the insulating layer are inserted into the supporting grooves, the side edges of the supporting bars are in concave-convex fit with the supporting grooves, the contact area between the insulating layer and the covering layer can be increased, the stability is improved, meanwhile, the arc-shaped structure pressure bearing pads are arranged at the bottom of the supporting bars, the supporting bars move downwards under the stress to be in contact with the pressure bearing pads, and pressure bearing buffering is carried out;
3. through setting up the bleeder vent in ceramic substrate layer, it is equidistant distribution of wriggling column structure, can increase the ventilative area of ceramic substrate layer, realizes the heat dissipation protection.
Drawings
FIG. 1 is a schematic front sectional view of the present invention;
FIG. 2 is a schematic perspective view of a metal base plate according to the present invention;
FIG. 3 is a schematic top view of a cross-sectional structure of the vent of the present invention;
FIG. 4 is an enlarged view of the structure at A in FIG. 1 according to the present invention;
fig. 5 is a perspective view of the support bar of the present invention.
In the figure: 1. a ceramic substrate layer; 2. a cover layer; 3. an insulating layer; 4. a thin film layer; 5. air holes are formed; 6. a metal bottom sheet; 61. a wear-resistant head; 7. a supporting strip; 8. a support groove; 9. a pressure bearing pad.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1-5, the present invention provides a technical solution: a thin film material structure for an InSb magnetosensitive device comprises a ceramic substrate layer 1, a covering layer 2, an insulating layer 3, a thin film layer 4, air holes 5, a metal bottom sheet 6, a wear-resisting head 61, a supporting strip 7, a supporting groove 8 and a pressure-bearing pad 9;
the ceramic substrate comprises a ceramic substrate layer 1, wherein a covering layer 2 is arranged at the top of the ceramic substrate layer 1, an insulating layer 3 is arranged on the covering layer 2, and a thin film layer 4 is laid on the insulating layer 3; further comprising: the air holes 5 are communicated with the inside of the ceramic substrate layer 1, and a metal bottom plate 6 is fixed at the bottom of the ceramic substrate layer 1; the covering layer 2 and the insulating layer 3 are made of Bi-sb alloy materials and zirconium dioxide materials respectively, the air holes 5 are distributed in the ceramic substrate layer 1 at equal intervals, the overlooking cross section of the air holes 5 is distributed in a winding structure, the metal bottom sheets 6 are distributed at the bottom of the ceramic substrate layer 1 at equal intervals, the metal bottom sheets 6 are designed in an inverted arc structure, the bottoms of the metal bottom sheets 6 are provided with wear-resistant heads 61 at equal angles, and the wear-resistant heads 61 are designed in a hemispherical structure;
as shown in fig. 1-3, the ceramic substrate layer 1 can be covered and shielded by the covering layer 2 made of Bi-sb alloy material, so as to avoid doping effect during the formation of the thin film layer 4, and the covering layer 2 and the thin film layer 4 are separated by the insulating layer 3 made of zirconium dioxide material, when the device is installed, the metal bottom sheet 6 contacts with the motor sheet, and the wear-resistant performance is realized by matching with the wear-resistant head 61, and meanwhile, when the heat of the motor sheet is transferred into the ceramic substrate layer 1, ventilation and heat dissipation are performed through the ventilation holes 5;
the supporting strips 7 are fixed at the bottom of the insulating layer 3, the supporting strips 7 are located in the supporting grooves 8, the supporting grooves 8 are formed in the top of the covering layer 2, the bottom of each supporting groove 8 is provided with a pressure bearing pad 9, the supporting strips 7 are distributed at the bottom of the insulating layer 3 at equal intervals, the side edges of the supporting strips 7 are in concave-convex fit with the supporting grooves 8, the pressure bearing pads 9 are made of silica gel materials with arc-shaped structures, and the tops of the pressure bearing pads 9 are attached to the bottom arc surfaces of the supporting strips 7;
as shown in fig. 1 and fig. 4-5, when the device is installed and used, the insulation layer 3 applies pressure to the support bars 7 under the action of external pressure, the support bars 7 move downwards in the support grooves 8 under the action of the pressure and are in contact with the pressure bearing pads 9, and the pressure bearing pads 9 are used for bearing pressure and protecting, so that the pressure damage is effectively avoided.
The working principle is as follows: when the thin film material structure for the InSb magnetic sensor is used, as shown in figures 1-5, firstly, a ceramic substrate layer 1 is covered and shielded by a covering layer 2 made of a Bi-sb alloy material, the covering layer 2 and a thin film layer 4 are separated by an insulating layer 3 made of a zirconium dioxide material, a metal bottom sheet 6 is in contact with a motor sheet, the wear-resisting performance is realized by matching with a wear-resisting head 61, meanwhile, the ventilation and heat dissipation are realized through a ventilation hole 5, when external pressure is applied, a supporting strip 7 is stressed to move downwards in a supporting groove 8 and is in contact with a pressure bearing pad 9, and pressure bearing protection is performed through the pressure bearing pad 9.
Although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that various changes in the embodiments and/or modifications of the utility model can be made, and equivalents and modifications of some features of the utility model can be made without departing from the spirit and scope of the utility model.

Claims (7)

1. A thin film material structure for an InSb magnetic sensor comprises a ceramic substrate layer (1), wherein a covering layer (2) is arranged on the top of the ceramic substrate layer (1), an insulating layer (3) is arranged on the covering layer (2), and a thin film layer (4) is laid on the insulating layer (3);
the method is characterized in that: further comprising:
the air holes (5) are communicated with the inside of the ceramic substrate layer (1), and a metal bottom plate (6) is fixed at the bottom of the ceramic substrate layer (1);
support bar (7), support bar (7) are fixed in the bottom of insulating layer (3), and support bar (7) are located support groove (8) to support groove (8) are seted up at the top of overburden (2), and pressure pad (9) have been placed to the bottom of support groove (8) moreover.
2. The thin film material structure for InSb magnetosensitive devices of claim 1, wherein: the covering layer (2) and the insulating layer (3) are made of Bi-sb alloy materials and zirconium dioxide materials respectively.
3. The thin film material structure for InSb magnetosensitive devices of claim 1, wherein: the air holes (5) are distributed in the ceramic substrate layer (1) at equal intervals, and the overlooking cross section of the air holes (5) is distributed in a winding structure.
4. The thin film material structure for InSb magnetosensitive devices of claim 1, wherein: the metal bottom plates (6) are distributed at the bottom of the ceramic substrate layer (1) at equal intervals, and the metal bottom plates (6) are designed to be of an inverted arc-shaped structure.
5. The thin film material structure for InSb magnetosensitive devices of claim 1, wherein: the bottom of the metal bottom plate (6) is provided with wear-resistant heads (61) at equal angles, and the wear-resistant heads (61) are designed to be of a hemispherical structure.
6. The thin film material structure for InSb magnetosensitive devices of claim 1, wherein: the support bars (7) are distributed at the bottom of the insulating layer (3) at equal intervals, and the side of each support bar (7) is matched with the support groove (8) in a concave-convex mode.
7. The thin film material structure for InSb magnetosensitive devices of claim 1, wherein: the pressure bearing pad (9) is made of a silica gel material with an arc-shaped structure, and the top of the pressure bearing pad (9) is attached to the bottom cambered surface of the support bar (7).
CN202122834444.3U 2021-11-18 2021-11-18 Thin film material structure for InSb magnetic sensor Active CN216389426U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202122834444.3U CN216389426U (en) 2021-11-18 2021-11-18 Thin film material structure for InSb magnetic sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202122834444.3U CN216389426U (en) 2021-11-18 2021-11-18 Thin film material structure for InSb magnetic sensor

Publications (1)

Publication Number Publication Date
CN216389426U true CN216389426U (en) 2022-04-26

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CN (1) CN216389426U (en)

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