CN216354810U - Frequency selective surface structure with high light transmittance - Google Patents
Frequency selective surface structure with high light transmittance Download PDFInfo
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- CN216354810U CN216354810U CN202123073767.1U CN202123073767U CN216354810U CN 216354810 U CN216354810 U CN 216354810U CN 202123073767 U CN202123073767 U CN 202123073767U CN 216354810 U CN216354810 U CN 216354810U
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Abstract
The utility model discloses a frequency selective surface structural member with high light transmittance, belongs to the technical field of electromagnetic fields and microwaves, and solves the problem that a wave-transparent stealth integrated material in the prior art is poor in light transmittance. The frequency selective surface structure comprises a frequency selective assembly, wherein the frequency selective assembly comprises a transparent cover plate, a transparent low-frequency wave absorbing layer and a transparent high-frequency wave transmitting layer which are sequentially stacked; the transparent low-frequency wave absorbing layer comprises a transparent medium piece, a transparent resonant square frame ring, a chip resistor and a transparent conductive chip, wherein the transparent resonant square frame ring, the chip resistor and the transparent conductive chip are arranged on the transparent medium piece; the transparent high-frequency wave-transmitting layer comprises a transparent medium layer and a transparent wave-transmitting resonant groove arranged on the transparent medium layer. The frequency selective surface structure can be used for a cabin of a stealth aircraft cab.
Description
Technical Field
The utility model belongs to the technical field of electromagnetic fields and microwaves, and particularly relates to a frequency selective surface structural member with high light transmittance.
Background
The cabin of the stealth aircraft cab is generally required to have working band wave-transmitting and stealth performances, and wave-transmitting and stealth integrated materials are basically divided into high-frequency wave-transmitting and low-frequency stealth materials, low-frequency wave-transmitting and high-frequency stealth materials and intermediate-frequency wave-transmitting and high-low-frequency stealth materials.
However, the conventional wave-transparent and invisible integrated material has poor light transmittance, and thus the visual field of a driver is influenced.
SUMMERY OF THE UTILITY MODEL
In view of the analysis, the utility model aims to provide a frequency selective surface structural member with high light transmittance, and solves the problem that the wave-transmitting stealth integrated material in the prior art has poor wave-absorbing light transmittance and affects the field of vision of a driver.
The purpose of the utility model is mainly realized by the following technical scheme:
the utility model provides a frequency selective surface structural member with high light transmittance, which comprises a frequency selective assembly, wherein the frequency selective assembly comprises a transparent cover plate, a transparent low-frequency wave absorbing layer and a transparent high-frequency wave transmitting layer which are sequentially stacked; the transparent low-frequency wave absorbing layer comprises a transparent medium piece, a transparent resonant square frame ring, a chip resistor and a transparent conductive chip, wherein the transparent resonant square frame ring, the chip resistor and the transparent conductive chip are arranged on the transparent medium piece; the transparent high-frequency wave-transmitting layer comprises a transparent medium layer and a transparent wave-transmitting resonant groove arranged on the transparent medium layer.
Furthermore, the frequency selection components are arranged periodically, the number of the frequency selection components is multiple, and the frequency selection components are distributed in a matrix.
Further, the transparent cover plate is one or a plurality of stacked arrangements of a PC cover plate, a PMMA cover plate, a PVC cover plate, a PS cover plate and a glass cover plate.
Further, the transparent dielectric member is one or a plurality of stacked arrangements of a PC dielectric member, a PMMA dielectric member, a PVC dielectric member, a PS dielectric member or a glass dielectric member; the transparent resonance square frame ring is an ITO resonance square frame ring; the transparent conductive patch is an ITO conductive patch.
Further, the transparent dielectric layer is one or a plurality of PC dielectric layers, PMMA dielectric layers, PVC dielectric layers, PS dielectric layers and glass dielectric layers which are arranged in a stacked mode; the transparent wave-transmitting resonant tank is an ITO wave-transmitting resonant tank.
Furthermore, the central line of the transparent low-frequency wave absorbing layer is superposed with the vertical central line of the transparent high-frequency wave transmitting layer.
Furthermore, the transparent dielectric member is of a three-dimensional structure and is provided with a central line perpendicular to the transparent high-frequency wave-transmitting layer, the transparent dielectric member comprises a plurality of transparent dielectric sheets arranged in parallel with the central line, one sides of the plurality of transparent dielectric sheets are connected at the central line, and the projection of the plurality of transparent dielectric sheets on the transparent high-frequency wave-transmitting layer is in a center divergence shape.
Furthermore, the number of the transparent medium layers is 4, one sides of the 4 transparent medium layers are connected at the central line and symmetrically and uniformly arranged, and the projection shapes of the 4 transparent medium layers on the transparent high-frequency wave-transmitting layer are in a cross shape.
Furthermore, the opposite surfaces of two adjacent transparent dielectric sheets form mounting surfaces, the mounting surfaces are rectangular in the unfolded state, in each mounting surface, the number of the transparent resonance square frame rings and the number of the chip resistors are 8, the transparent resonance square frame rings are arranged at the middle points of the sides of the rectangle, and the chip resistors are arranged at the four corners of the rectangle.
Furthermore, the transparent resonance square frame ring, the chip resistor and the transparent conductive chip form a ring shape, and the ring shape is arranged along the edge of the mounting surface.
Furthermore, the length of the transparent conductive patch is 12-20 mm, and the width of the transparent conductive patch is 0.2-1.2 mm.
Furthermore, the resistance value of the chip resistor is 200-350 omega.
Further, the length of the long side of the transparent resonance square frame ring is 2-6 mm, the length of the short side is 1-4 mm, and the width of the long side and the short side of the transparent resonance square frame ring is 0.2-0.4 mm.
Furthermore, the transparent resonant square frame ring is provided with an opening, and the width of the opening is 0.2-0.4 mm.
Further, the cross-sectional dimension (i.e. the period of the frequency selective surface structure) of the frequency selective component is 15-25 mm.
Furthermore, the cross sections of the transparent low-frequency wave absorbing layer and the transparent high-frequency wave transmitting layer are square or rhombic, and the side length of the cross sections of the transparent low-frequency wave absorbing layer and the transparent high-frequency wave transmitting layer is 15-25 mm.
Furthermore, the shape of the wave-transparent resonant groove is circular, the outer diameter is 12-20 mm, and the width is 2-5 mm.
Further, the number of the transparent high-frequency wave-transmitting layers is at least one.
Further, the number of the transparent high-frequency wave-transmitting layers is multiple, and the multiple transparent high-frequency wave-transmitting layers are stacked.
Further, the gap between two adjacent transparent high-frequency wave-transmitting layers is 3-6 mm.
Furthermore, the thickness of the transparent medium sheet and/or the transparent medium layer is 0.1-1.5 mm.
Furthermore, the thickness of the transparent cover plate is 0.1-1.5 mm.
Compared with the prior art, the utility model can realize at least one of the following beneficial effects:
a) in the frequency selective surface structural member with high light transmittance, the transparent cover plate, the transparent low-frequency wave absorbing layer and the transparent high-frequency wave transmitting layer are all transparent parts, so that the light transmittance of the frequency selective surface structural member can be effectively improved. In addition, the chip resistor is connected with the transparent conductive chip and used for converting the energy of the electromagnetic wave with the wave-absorbing frequency so as to absorb the electromagnetic wave, and the transparent resonant square ring is used for transmitting the electromagnetic wave with the wave-transmitting frequency in a resonant mode; the transparent wave-transmitting resonant tank is used for transmitting waves of electromagnetic waves with wave-transmitting frequency and reflecting the electromagnetic waves with wave-absorbing frequency. In addition, it is found through testing that the frequency selective surface structure described above is completely identical in TE and TM polarization response, i.e., insensitive to polarization.
b) In the high-light-transmittance frequency selective surface structural member provided by the utility model, the transparent low-frequency wave-absorbing layer is of a three-dimensional structure, and the air accounts for a large amount in the transparent low-frequency wave-absorbing layer of the three-dimensional structure, so that the wave-absorbing frequency band can be effectively widened, and tests show that S11 and S21 of the frequency selective surface structural member are both less than-10 dB within 2-6.7GHz and are wider than the wave-absorbing frequency band (usually 2.2-5.3 GHz) in the prior art.
Additional features and advantages of the utility model will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the utility model. The objectives and other advantages of the utility model will be realized and attained by the structure particularly pointed out in the written description and drawings.
Drawings
The drawings are for purposes of illustrating particular embodiments and are not to be construed as limiting the utility model, wherein like reference numerals are used to designate like parts throughout.
Fig. 1 is a schematic structural diagram of a frequency selective assembly in a high-transmittance frequency selective surface structure provided by the present invention, wherein the number of high-frequency wave-transparent layers is 2;
FIG. 2 is a schematic structural diagram of another high-transmittance frequency selective surface structure according to the present invention, wherein the number of the high-frequency wave-transmitting layers is 1;
FIG. 3 is a schematic structural view of a low-frequency wave-absorbing layer in the high-transmittance frequency selective surface structure provided by the utility model;
FIG. 4 is a schematic structural view of a high transmittance frequency selective surface structure according to the present invention;
FIG. 5 is a wave-absorbing wave-transmitting curve of the high-transmittance frequency selective surface structure of example 1 of the present invention;
fig. 6 is a wave-absorbing wave-transmitting curve of the frequency selective surface structure with high light transmittance in example 2 of the present invention.
Reference numerals:
1-a transparent cover plate; 2-transparent low-frequency wave-absorbing layer; 21-a transparent dielectric sheet; 22-transparent resonant square frame ring; 23-a transparent conductive patch; 24-patch resistance; 3-transparent high-frequency wave-transparent layer; 31-a transparent dielectric layer; 32-transparent wave-transparent resonant tank.
Detailed Description
The preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings, which form a part hereof, and which together with the embodiments of the utility model serve to explain the principles of the utility model.
Example one
The embodiment provides a frequency selective surface structure with high light transmittance, which is shown in fig. 1 to 4 and comprises a frequency selective assembly, wherein the frequency selective assembly comprises a transparent cover plate 1, a transparent low-frequency wave-absorbing layer 2 and a transparent high-frequency wave-transmitting layer 3 which are sequentially stacked; the transparent low-frequency wave absorbing layer 2 comprises a transparent medium piece, a transparent resonance square frame ring 22, a chip resistor 24 and a transparent conductive chip 23, wherein the transparent resonance square frame ring 22, the chip resistor 24 and the transparent conductive chip 23 are arranged on the transparent medium piece; the transparent high-frequency wave-transmitting layer 3 is a planar structure and comprises a transparent medium layer 31 and a transparent wave-transmitting resonant groove 32 arranged on the transparent medium layer 31.
Illustratively, the frequency selective components are arranged in a cycle, the number of the frequency selective components is multiple, and the multiple frequency selective components are distributed in a matrix.
Compared with the prior art, in the frequency selective surface structure with high light transmittance provided by the embodiment, the transparent cover plate 1, the transparent low-frequency wave-absorbing layer 2 and the transparent high-frequency wave-transmitting layer 3 are all transparent parts, so that the light transmittance of the frequency selective surface structure can be effectively improved. In addition, the chip resistor 24 is connected with the transparent conductive chip 23 and is used for energy conversion of electromagnetic waves with wave-absorbing frequency so as to absorb the electromagnetic waves, and the transparent resonant square frame ring 22 is used for resonant wave transmission of the electromagnetic waves with wave-transmitting frequency; the transparent wave-transmitting resonant tank 32 is used for transmitting the electromagnetic wave at the wave-transmitting frequency and reflecting the electromagnetic wave at the wave-absorbing frequency. In addition, it is found through testing that the frequency selective surface structure described above is completely identical in TE and TM polarization response, i.e., insensitive to polarization.
Illustratively, the transparent cover plate 1 may be a medium with high light transmittance, for example, the transparent cover plate 1 is a stacked arrangement of one or more of a PC cover plate, a PMMA cover plate, a PVC cover plate, a PS cover plate, and a glass cover plate.
Likewise, the transparent dielectric member may be one or more of a PC dielectric member, a PMMA dielectric member, a PVC dielectric member, a PS dielectric member, or a glass dielectric member; the transparent resonant square frame ring 22 is an ITO resonant square frame ring; the transparent conductive patch 23 is an ITO conductive patch.
The transparent dielectric layer 31 is one or a plurality of PC dielectric layers, PMMA dielectric layers, PVC dielectric layers, PS dielectric layers and glass dielectric layers which are arranged in a stacked mode; the transparent wave-transmitting resonant tank 32 is an ITO wave-transmitting resonant tank.
In view of structural symmetry and high-frequency wave-transmitting and low-frequency wave-absorbing angles, the central line of the transparent low-frequency wave-absorbing layer 2 is superposed with the vertical central line of the transparent high-frequency wave-transmitting layer 3.
As for the structure of the transparent dielectric member, specifically, it is a three-dimensional structure having a center line perpendicular to the transparent high-frequency wave-transmitting layer 3, the transparent dielectric member includes a plurality of transparent dielectric sheets 21 arranged parallel to the center line, and one side of the plurality of transparent dielectric sheets 21 is connected at the center line so that the shape of projection of the plurality of transparent dielectric sheets 21 on the transparent high-frequency wave-transmitting layer 3 is a center divergent shape. Illustratively, the number of the transparent dielectric sheets 21 is 4, and one sides of the 4 transparent dielectric layers 21 are connected at the center line and symmetrically and uniformly arranged, so that the shape of the projection of the 4 transparent dielectric layers 21 on the transparent high-frequency wave-transmitting layer 3 is a cross. Compared with the traditional transparent low-frequency wave-absorbing layer 2 with a planar structure, the transparent low-frequency wave-absorbing layer 2 with the three-dimensional structure has a large air ratio in the transparent low-frequency wave-absorbing layer 2, so that the wave-absorbing frequency band can be effectively widened, and tests show that S11 and S21 of the frequency selective surface structural member are both smaller than-10 dB in 2-6.7GHz and are wider than the wave-absorbing frequency band (usually 2.2-5.3 GHz) in the prior art.
In order to improve the space layout rationality of the transparent low-frequency wave-absorbing layer 2, the surfaces of two adjacent transparent dielectric sheets 21 form a mounting surface, the mounting surface is rectangular in an unfolded state, in each mounting surface, the number of the transparent resonance square frame rings 22 and the chip resistors 24 is 4, the number of the transparent conductive chips 23 is 8, the transparent resonance square frame rings 22 are arranged at the middle points of the sides of the rectangle, the chip resistors 24 are arranged at the four corners of the rectangle, the transparent resonance square frame rings 22, the chip resistors 24 and the transparent conductive chips 23 form a ring shape, and the ring shape is arranged along the edge of the mounting surface.
Illustratively, the transparent conductive patch 23 has a length of 12 to 20mm and a width of 0.2 to 1.2 mm; the resistance value of the chip resistor 24 is 200-350 omega; the length on the long limit of transparent resonance square frame ring 22 is 2 ~ 6mm, and the length of minor face is 1 ~ 4mm, and the width on the long limit of transparent resonance square frame ring 22 and minor face is 0.2 ~ 0.4mm, and transparent resonance square frame ring 22 has the opening, and the opening width is 0.2 ~ 0.4 mm.
In order to ensure the air proportion in the transparent low-frequency wave-absorbing layer 2, the cross section size (namely the period of the frequency selective surface structural member) of the frequency selective component is 15-25 mm. It should be noted that the cross sections of the transparent low-frequency wave-absorbing layer 2 and the transparent high-frequency wave-transmitting layer 3 may be square or diamond, and correspondingly, the side length of the cross sections of the transparent low-frequency wave-absorbing layer 2 and the transparent high-frequency wave-transmitting layer 3 is 15-25 mm.
For the transparent high-frequency wave-transmitting layer 3, the shape of the wave-transmitting resonant groove 32 is circular, the outer diameter is 12-20 mm, and the width is 2-5 mm.
In order to ensure the integral performance of the transparent high-frequency wave-transmitting layer 3 and adjust the wave-absorbing performance of the transparent low-frequency wave-absorbing layer 2, the number of the transparent high-frequency wave-transmitting layers 3 is at least one. For example, the number of the transparent high-frequency wave-transmitting layers 3 is 2, and 2 transparent high-frequency wave-transmitting layers 3 are stacked.
In order to further adjust the low-frequency wave-absorbing performance, the gap between two adjacent transparent high-frequency wave-transmitting layers 3 is 3-6 mm.
In order to ensure that the transparent low-frequency wave-absorbing layer 2 and the transparent high-frequency wave-transmitting layer 3 have sufficient mechanical strength, the thickness of the transparent dielectric element 21 and/or the transparent dielectric layer 31 is 0.1-1.5 mm.
In order to ensure that the transparent cover plate 1 has sufficient mechanical strength, the thickness of the transparent cover plate 1 is 0.1-1.5 mm.
It should be noted that, in the frequency selective surface structure with high light transmittance provided by the present invention, each component (for example, the transparent dielectric sheet 21, the transparent resonant square frame ring 22, and the transparent conductive patch)23. The chip resistors 24 and the transparent dielectric layer 31) are made of materials in the prior art, and no improvement in the material is involved. For example, PC is polycarbonate, a high molecular polymer containing carbonate groups in the molecular chain; PMMA is polymethyl methacrylate, is a high molecular polymer, has the advantages of high transparency, low price, easy machining and the like, and is a glass substitute material frequently used in the prior art; PVC is polyvinyl chloride, which is a polymer formed by polymerizing vinyl chloride monomers under the action of initiators such as peroxides and azo compounds or under the action of light and heat according to a free radical polymerization reaction mechanism; PS is polystyrene, which is a polymer synthesized by styrene monomer through free radical addition polymerization; ITO is indium tin oxide consisting of 90 wt.% In2O3And 10 wt.% SnO2Mixing the components.
Example 1
This embodiment provides a frequency selective surface structure spare of high luminousness, and the frequency selective subassembly is arranged for the cycle, and the quantity is a plurality of, and a plurality of frequency selective subassemblies are the matrix distribution, and the quantity of transparent medium spare is 4, and one side of 4 transparent medium spares is connected and symmetrical even arrangement in central line department for the shape of 4 transparent medium spares projection on transparent high frequency wave-transmitting layer is the cross, and the cycle is 18 mm.
In the transparent low-frequency wave-absorbing layer, the length of the ITO transparent conductive patch is 15.8mm, and the width of the ITO transparent conductive patch is 0.4 mm; the length on the long limit of the transparent resonance square frame ring of ITO is 3mm, and the length of minor face is 2mm, and the width on the long limit of the transparent resonance square frame ring of ITO and minor face is 0.2mm, and the opening width is 0.2mm, and chip resistor's resistance is 250 omega.
In the transparent high-frequency wave-transmitting layer, the outer diameter of the ITO transparent wave-transmitting resonant groove is 13.5mm, the width of the ITO transparent wave-transmitting resonant groove is 3.5mm, the number of the transparent high-frequency wave-transmitting layers is 2, and the gap between every two adjacent transparent high-frequency wave-transmitting layers is 5 mm.
The transparent medium piece and the transparent medium layer are both made of glass and have the thickness of 0.5 mm.
As shown in figure 5, TE and TM waves are used for electromagnetic simulation, S parameters of two polarizations are completely consistent, S11 and S21 are both smaller than-10 dB in 2-6.7GHz, S21 transmittance is larger than-2 dB (the whole transmittance is larger than 80%) in 16.2-17GHz, the whole light transmittance is larger than 75%, and good light-transmitting stealth wave-transmitting performance is shown.
Example 2
This embodiment provides a frequency selective surface structure spare of high luminousness, and the frequency selective subassembly is arranged for the cycle, and the quantity is a plurality of, and a plurality of frequency selective subassemblies are the matrix distribution, and the quantity of transparent medium spare is 4, and one side of 4 transparent medium spares is connected and symmetrical even arrangement in central line department for the shape of 4 transparent medium spares projection on transparent high frequency wave-transmitting layer is the cross, and the cycle is 17.5 mm.
In the transparent low-frequency wave-absorbing layer, the length of the ITO transparent conductive patch is 15.8mm, and the width of the ITO transparent conductive patch is 0.5 mm; the length on the long limit of the transparent resonance square frame ring of ITO is 4mm, and the length of minor face is 2mm, and the width on the long limit of the transparent resonance square frame ring of ITO and minor face is 0.2mm, and the opening width is 0.3mm, and chip resistor's resistance is 250 omega.
In the transparent high-frequency wave-transmitting layer, the outer diameter of the ITO transparent wave-transmitting resonant groove is 14mm, the width of the ITO transparent wave-transmitting resonant groove is 3.5mm, and the number of the transparent high-frequency wave-transmitting layers is 1.
The transparent medium piece and the transparent medium layer are both made of glass and have the thickness of 0.6 mm.
As shown in figure 6, TE and TM waves are used for electromagnetic simulation, S parameters of two polarizations are basically consistent, S11 and S21 are both less than-10 dB in 2.0-6.0GHz, S21 transmittance is greater than-2 dB (the overall transmittance is greater than 80%) in 14.5-16.7GHz, the overall transmittance is greater than 75%, and good light-transmitting and stealth wave-transmitting performance is shown.
The above description is a preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are also within the scope of the present invention.
Claims (10)
1. A frequency selective surface structure with high light transmittance is characterized by comprising a frequency selective assembly, wherein the frequency selective assembly comprises a transparent cover plate, a transparent low-frequency wave absorbing layer and a transparent high-frequency wave transmitting layer which are sequentially stacked;
the transparent low-frequency wave absorbing layer comprises a transparent medium piece, a transparent resonance square frame ring, a chip resistor and a transparent conductive chip, wherein the transparent resonance square frame ring, the chip resistor and the transparent conductive chip are arranged on the transparent medium piece;
the transparent high-frequency wave-transmitting layer comprises a transparent medium layer and a transparent wave-transmitting resonant groove arranged on the transparent medium layer.
2. The high optical transmission frequency selective surface structure according to claim 1, wherein said transparent cover plate is one or more of a PC cover plate, a PMMA cover plate, a PVC cover plate, a PS cover plate, and a glass cover plate in a stacked arrangement.
3. The high transmittance frequency selective surface structure according to claim 1, wherein the transparent dielectric member is one or more of a PC dielectric member, a PMMA dielectric member, a PVC dielectric member, a PS dielectric member, or a glass dielectric member;
and/or the transparent resonance square frame ring is an ITO resonance square frame ring;
and/or the transparent conductive patch is an ITO conductive patch.
4. The high-transmittance frequency selective surface structure according to claim 1, wherein the transparent dielectric layer is one or more of a PC dielectric layer, a PMMA dielectric layer, a PVC dielectric layer, a PS dielectric layer, and a glass dielectric layer;
and/or the transparent wave-transmitting resonant groove is an ITO wave-transmitting resonant groove.
5. A high transmittance frequency selective surface structure as claimed in any one of claims 1 to 4, wherein the central line of the transparent low-frequency wave-absorbing layer coincides with the vertical central line of the transparent high-frequency wave-transmitting layer.
6. A high transmittance frequency selective surface structure according to any one of claims 1 to 4, wherein the transparent low frequency absorbing layer and the transparent high frequency wave-transmitting layer have a square or diamond cross-sectional shape.
7. The high-transmittance frequency selective surface structure according to claim 6, wherein the side length of the cross section of the transparent low-frequency wave-absorbing layer and the transparent high-frequency wave-transmitting layer is 15-25 mm.
8. A high transmittance frequency selective surface structure as claimed in any one of claims 1 to 4, wherein the shape of the wave-transparent resonant groove is circular, the outer diameter is 12 to 20mm, and the width is 2 to 5 mm.
9. A high optical transmittance frequency selective surface structure according to claim 8, wherein the number of transparent high-frequency wave-transmitting layers is a plurality of layers, and a plurality of transparent high-frequency wave-transmitting layers are stacked.
10. A high-transmittance frequency selective surface structure according to claim 9, wherein the gap between two adjacent transparent high-frequency wave-transmitting layers is 3-6 mm.
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| CN202123073767.1U CN216354810U (en) | 2021-12-08 | 2021-12-08 | Frequency selective surface structure with high light transmittance |
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| CN202123073767.1U CN216354810U (en) | 2021-12-08 | 2021-12-08 | Frequency selective surface structure with high light transmittance |
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