CN216354810U - Frequency selective surface structure with high light transmittance - Google Patents

Abstract

The utility model discloses a frequency selective surface structural member with high light transmittance, belongs to the technical field of electromagnetic fields and microwaves, and solves the problem that a wave-transparent stealth integrated material in the prior art is poor in light transmittance. The frequency selective surface structure comprises a frequency selective assembly, wherein the frequency selective assembly comprises a transparent cover plate, a transparent low-frequency wave absorbing layer and a transparent high-frequency wave transmitting layer which are sequentially stacked; the transparent low-frequency wave absorbing layer comprises a transparent medium piece, a transparent resonant square frame ring, a chip resistor and a transparent conductive chip, wherein the transparent resonant square frame ring, the chip resistor and the transparent conductive chip are arranged on the transparent medium piece; the transparent high-frequency wave-transmitting layer comprises a transparent medium layer and a transparent wave-transmitting resonant groove arranged on the transparent medium layer. The frequency selective surface structure can be used for a cabin of a stealth aircraft cab.

Description

A high transmittance frequency selective surface structure

technical field

The utility model belongs to the technical field of electromagnetic fields and microwaves, in particular to a frequency selective surface structural member with high light transmittance.

Background technique

Stealth aircraft cab cockpit usually requires the need to have working frequency band wave transmission and stealth performance. Material.

However, the light transmittance of the existing wave-transmitting stealth integrated material is poor, which affects the driver's field of vision.

Utility model content

In view of the above analysis, the present utility model aims to provide a frequency selective surface structure with high light transmittance, which solves the problem that the wave-absorbing and light-transmitting property of the integrated wave-transmitting stealth material in the prior art affects the driver's field of vision. .

The purpose of the present utility model is mainly achieved through the following technical solutions:

The utility model provides a frequency selection surface structural member with high light transmittance, which includes a frequency selection component, and the frequency selection component includes a transparent cover plate, a transparent low-frequency wave-absorbing layer and a transparent high-frequency wave-transmitting layer which are stacked in sequence; The wave layer includes a transparent dielectric part and a transparent resonant square ring, a chip resistor and a transparent conductive patch arranged on the transparent dielectric part, and the transparent resonant square ring is connected with the chip resistor through the transparent conductive patch; transparent high-frequency wave transmission The layer includes a transparent medium layer and a transparent wave-transmitting resonance groove arranged on the transparent medium layer.

Further, the frequency selection components are arranged periodically, the number is multiple, and the multiple frequency selection components are distributed in a matrix.

Further, the above-mentioned transparent cover plate is one or more of a PC cover plate, a PMMA cover plate, a PVC cover plate, a PS cover plate, and a glass cover plate in a stacked arrangement.

Further, the transparent dielectric parts are one or more of PC dielectric parts, PMMA dielectric parts, PVC dielectric parts, PS dielectric parts or glass dielectric parts in a stacked arrangement; the transparent resonant square ring is an ITO resonant square ring; transparent conductive The patch is an ITO conductive patch.

Further, the transparent medium layer is one or more of PC medium layer, PMMA medium layer, PVC medium layer, PS medium layer, and glass medium layer.

Further, the center line of the transparent low-frequency wave-absorbing layer coincides with the vertical center line of the transparent high-frequency wave-transmitting layer.

Further, the transparent dielectric member is a three-dimensional structure with a center line perpendicular to the transparent high-frequency wave-transmitting layer, the transparent dielectric member includes a plurality of transparent dielectric sheets arranged parallel to the center line, and one side of the multiple transparent dielectric sheets is aligned with the center line. The shapes of the projections of the plurality of transparent dielectric sheets on the transparent high-frequency wave-transmitting layer are centrally divergent.

Further, the number of transparent medium layers is 4, one side of the 4 transparent medium layers is connected at the center line and arranged symmetrically and evenly, and the projection shape of the 4 transparent medium layers on the transparent high-frequency wave-transmitting layer is a cross. .

Further, the opposite surfaces of the two adjacent transparent dielectric sheets constitute a mounting surface, and the mounting surface is rectangular in the unfolded state. The number is 8, the transparent resonance frame ring is set at the midpoint of the rectangle side, and the chip resistors are set at the four corners of the rectangle.

Further, the transparent resonance square ring, the chip resistor and the transparent conductive patch form a ring, and the ring is arranged along the edge of the mounting surface.

Further, the length of the transparent conductive patch is 12-20 mm, and the width is 0.2-1.2 mm.

Further, the resistance value of the chip resistor is 200-350Ω.

Further, the length of the long side of the transparent resonant square ring is 2-6 mm, the length of the short side is 1-4 mm, and the width of the long side and the short side of the transparent resonating square ring is 0.2-0.4 mm.

Further, the transparent resonance square ring has an opening, and the width of the opening is 0.2-0.4 mm.

Further, the cross-sectional dimension of the frequency selective component (ie the period of the frequency selective surface structure) is 15-25 mm.

Further, the cross-sectional shapes of the transparent low-frequency wave-absorbing layer and the transparent high-frequency wave-transmitting layer are square or rhombus, and the side lengths of the cross-sections of the transparent low-frequency wave-absorbing layer and the transparent high-frequency wave-transmitting layer are 15-25 mm.

Further, the shape of the wave-transmitting resonance slot is a circle, the outer diameter is 12-20 mm, and the width is 2-5 mm.

Further, the number of transparent high-frequency wave-transmitting layers is at least one layer.

Further, the number of transparent high-frequency wave-transmitting layers is multiple layers, and the multiple transparent high-frequency wave-transmitting layers are arranged in layers.

Further, the gap between two adjacent transparent high-frequency wave-transmitting layers is 3-6 mm.

Further, the thickness of the above-mentioned transparent medium sheet and/or transparent medium layer is 0.1-1.5 mm.

Further, the thickness of the above-mentioned transparent cover plate is 0.1-1.5 mm.

Compared with the prior art, the present invention can achieve at least one of the following beneficial effects:

a) In the high transmittance frequency selective surface structural member provided by the present invention, the transparent cover plate, the transparent low-frequency wave-absorbing layer and the transparent high-frequency wave-transmitting layer are all transparent components, so that the frequency selective surface structural member can be effectively improved. Transmittance. In addition, the chip resistor is connected to the transparent conductive patch, which is used for the energy conversion of electromagnetic waves at the absorbing frequency, and then absorbs the electromagnetic waves. Electromagnetic waves at wave frequencies transmit waves and reflect electromagnetic waves at absorbing frequencies. In addition, it can be seen from the test that the above-mentioned frequency selective surface structure has completely consistent responses to TE and TM polarization, that is, it is not sensitive to polarization.

b) In the frequency selective surface structural member with high light transmittance provided by the present invention, since the transparent low-frequency wave absorbing layer is a three-dimensional structure, the proportion of air in the transparent low-frequency wave absorbing layer of the three-dimensional structure is relatively large, thereby effectively widening the wave-absorbing frequency band , it can be seen from the test that the S11 and S21 of the above-mentioned frequency selective surface structure are both less than -10dB in the range of 2-6.7GHz, which is wider than the absorbing frequency band of the prior art (usually 2.2-5.3GHz).

Other features and advantages of the invention will be set forth in the description which follows, and in part will be apparent from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention may be realized and attained by the structure particularly pointed out in the written description and appended drawings.

Description of drawings

The drawings are for the purpose of illustrating specific embodiments and are not to be considered limiting of the present invention, and like reference numerals refer to like parts throughout the drawings.

Fig. 1 is the structural representation of the frequency selective component in the frequency selective surface structural member of high light transmittance provided by the utility model, wherein, the quantity of the high frequency wave-transmitting layer is 2 layers;

FIG. 2 is another schematic structural diagram of the frequency selective surface structural member with high light transmittance provided by the present invention, wherein the number of high frequency wave-transmitting layers is 1;

3 is a schematic structural diagram of a low-frequency wave absorbing layer in a frequency selective surface structural member with high light transmittance provided by the present invention;

4 is a schematic structural diagram of a frequency selective surface structural member with high light transmittance provided by the present invention;

Fig. 5 is the wave absorption and wave transmission curve of the frequency selective surface structure member with high light transmittance according to Embodiment 1 of the present utility model;

FIG. 6 is a wave absorption and wave transmission curve of the high transmittance frequency selective surface structural member according to the second embodiment of the present invention.

Reference number:

1-transparent cover plate; 2-transparent low-frequency wave absorbing layer; 21-transparent dielectric sheet; 22-transparent resonant square ring; 23-transparent conductive patch; 24-chip resistor; 3-transparent high-frequency wave-transmitting layer; 31-transparent dielectric layer; 32-transparent wave-transmitting resonance slot.

Detailed ways

The preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings, wherein the accompanying drawings constitute a part of the present invention and are used to explain the principles of the present invention together with the embodiments of the present invention.

Example 1

This embodiment provides a frequency selective surface structure with high light transmittance. Referring to FIG. 1 to FIG. 4 , it includes a frequency selective component, and the frequency selective component includes a transparent cover plate 1 , a transparent low-frequency wave absorbing layer 2 and The transparent high-frequency wave-transmitting layer 3; the transparent low-frequency wave-absorbing layer 2 includes a transparent dielectric member and a transparent resonant square ring 22, a chip resistor 24 and a transparent conductive patch 23, which are arranged on the transparent dielectric member, and the transparent resonant square ring 22 The transparent conductive patch 23 is connected to the chip resistor 24 ; the transparent high-frequency wave-transmitting layer 3 is a planar structure, including a transparent medium layer 31 and a transparent wave-transmitting resonance slot 32 arranged on the transparent medium layer 31 .

Exemplarily, the frequency selection components are arranged periodically, and the number is multiple, and the multiple frequency selection components are distributed in a matrix.

Compared with the prior art, in the frequency selective surface structural member with high light transmittance provided in this embodiment, the transparent cover plate 1 , the transparent low-frequency wave-absorbing layer 2 and the transparent high-frequency wave-transmitting layer 3 are all transparent components, so that the Effectively improve the light transmittance of the frequency selective surface structure. In addition, the patch resistor 24 is connected to the transparent conductive patch 23, which is used for the energy conversion of electromagnetic waves at the wave-absorbing frequency, and then absorbs the electromagnetic waves. 32 is used to transmit electromagnetic waves at the transmission frequency and reflect electromagnetic waves at the absorption frequency. In addition, it can be seen from the test that the above-mentioned frequency selective surface structure has completely consistent responses to TE and TM polarization, that is, it is not sensitive to polarization.

Exemplarily, the above-mentioned transparent cover plate 1 may be a medium with high light transmittance, for example, the transparent cover plate 1 is one of a PC cover plate, a PMMA cover plate, a PVC cover plate, a PS cover plate, a glass cover plate or Various stacked arrangements.

Likewise, the transparent dielectric member may be one or more of PC dielectric members, PMMA dielectric members, PVC dielectric members, PS dielectric members or glass dielectric members in a stacked arrangement; the transparent resonant square ring 22 is an ITO resonant square ring; The transparent conductive patch 23 is an ITO conductive patch.

The transparent medium layer 31 is one or more of PC medium layer, PMMA medium layer, PVC medium layer, PS medium layer, and glass medium layer.

From the perspective of structural symmetry and high-frequency wave transmission and low-frequency wave absorption, the center line of the transparent low-frequency wave absorbing layer 2 coincides with the vertical center line of the transparent high-frequency wave-transmitting layer 3 .

As for the structure of the transparent dielectric member, specifically, it is a three-dimensional structure with a center line perpendicular to the transparent high-frequency wave-transmitting layer 3, the transparent dielectric member includes a plurality of transparent dielectric sheets 21 arranged parallel to the center line, and a plurality of transparent One side of the dielectric sheet 21 is connected at the center line, so that the projected shape of the plurality of transparent dielectric sheets 21 on the transparent high-frequency wave-transmitting layer 3 is a centrally divergent shape. Exemplarily, the number of the transparent dielectric sheets 21 is 4, and one side of the 4 transparent dielectric layers 21 is connected at the center line and arranged symmetrically and uniformly, so that the 4 transparent dielectric layers 21 are arranged on the transparent high-frequency wave-transmitting layer 3 . The shape of the projection is a cross. Compared with the transparent low-frequency wave absorbing layer 2 of the traditional planar structure, since the transparent low-frequency wave absorbing layer 2 is a three-dimensional structure, the air proportion in the transparent low-frequency wave absorbing layer 2 of the three-dimensional structure is relatively large, which can effectively widen the absorbing frequency band. The test shows that the S11 and S21 of the above-mentioned frequency selective surface structure are both less than -10dB in the range of 2-6.7GHz, which is wider than the absorbing frequency band of the prior art (usually 2.2-5.3GHz).

In order to improve the rationality of the spatial layout of the transparent low-frequency wave absorbing layer 2, the opposite surfaces of the two adjacent transparent dielectric sheets 21 constitute a mounting surface, and the mounting surface is rectangular in the unfolded state. 22 and the number of chip resistors 24 are 4, the number of transparent conductive patches 23 is 8, the transparent resonant square ring 22 is set at the midpoint of the rectangular side, the chip resistors 24 are set at the four corners of the rectangle, and the transparent resonant square The frame ring 22, the chip resistor 24 and the transparent conductive patch 23 form a ring, and the ring is arranged along the edge of the mounting surface.

Exemplarily, the length of the transparent conductive patch 23 is 12-20 mm, the width is 0.2-1.2 mm; the resistance value of the patch resistor 24 is 200-350Ω; the length of the long side of the transparent resonant square ring 22 is 2-6 mm , the length of the short side is 1-4mm, the width of the long side and the short side of the transparent resonant square ring 22 is 0.2-0.4mm, the transparent resonant square ring 22 has an opening, and the opening width is 0.2-0.4mm.

In order to ensure the proportion of air in the transparent low-frequency wave absorbing layer 2, the cross-sectional dimension of the frequency selective component (ie the period of the frequency selective surface structure) is 15-25 mm. It should be noted that the cross-sectional shapes of the transparent low-frequency wave-absorbing layer 2 and the transparent high-frequency wave-transmitting layer 3 may be square or diamond. The side length is 15-25mm.

For the transparent high-frequency wave-transmitting layer 3, the wave-transmitting resonance groove 32 has a circular shape, an outer diameter of 12-20 mm, and a width of 2-5 mm.

In order to ensure the overall performance of the transparent high-frequency wave-transmitting layer 3 and adjust the wave-absorbing performance of the transparent low-frequency wave-absorbing layer 2 , the quantity of the transparent high-frequency wave-transmitting layer 3 is at least one layer. For example, the number of the transparent high-frequency wave-transmitting layers 3 is two, and the two transparent high-frequency wave-transmitting layers 3 are stacked.

In order to further adjust the low-frequency wave-absorbing performance, the gap between two adjacent transparent high-frequency wave-transmitting layers 3 is 3-6 mm.

In order to ensure that the transparent low-frequency wave absorbing layer 2 and the transparent high-frequency wave-transmitting layer 3 have sufficient mechanical strength, the thickness of the transparent dielectric member 21 and/or the transparent dielectric layer 31 is 0.1-1.5 mm.

In order to ensure that the transparent cover plate 1 has sufficient mechanical strength, the thickness of the above-mentioned transparent cover plate 1 is 0.1-1.5 mm.

It should be noted that, in the high transmittance frequency selective surface structure provided by the present invention, each component (for example, the transparent dielectric sheet 21, the transparent resonant box ring 22, the transparent conductive patch 23, the patch resistor 24 and the The materials used for the transparent medium layer 31) are all materials in the prior art, which do not involve any improvement in materials. For example, PC is polycarbonate, which is a high molecular polymer containing carbonate groups in the molecular chain; PMMA is polymethyl methacrylate, which is a high molecular polymer with high transparency, low price, easy machining, etc. The advantage is that it is a commonly used glass substitute material; PVC is polyvinyl chloride, which is a polymerization of vinyl chloride monomers in peroxides, azo compounds and other initiators or under the action of light and heat according to the mechanism of free radical polymerization. Polymer; PS is polystyrene, which refers to a polymer synthesized by free radical addition polymerization of styrene monomer; ITO is indium tin oxide, which is a mixture of 90wt.% In ₂ O ₃ and 10wt. % SnO ₂ .

Example 1

This embodiment provides a frequency selective surface structural member with high light transmittance. The frequency selective components are arranged periodically, and the number is multiple. The multiple frequency selective components are distributed in a matrix. One side of the transparent medium parts is connected at the center line and arranged symmetrically and evenly, so that the projected shape of the four transparent medium parts on the transparent high-frequency wave-transmitting layer is a cross shape with a period of 18 mm.

In the transparent low-frequency absorbing layer, the length of the ITO transparent conductive patch is 15.8mm and the width is 0.4mm; the length of the long side of the ITO transparent resonant box ring is 3mm, and the length of the short side is 2mm. The width of the long and short sides is 0.2mm, the width of the opening is 0.2mm, and the resistance value of the chip resistor is 250Ω.

In the transparent high-frequency wave-transmitting layer, the outer diameter of the ITO transparent wave-transmitting resonant slot is 13.5mm, the width is 3.5mm, the number of transparent high-frequency wave-transmitting layers is 2, and the gap between two adjacent transparent high-frequency wave-transmitting layers is is 5mm.

Both the transparent medium part and the transparent medium layer are glass, and the thickness is 0.5mm.

As shown in Figure 5, the electromagnetic simulation with TE and TM waves shows that the S-parameters of the two polarizations are exactly the same. Both S11 and S21 are less than -10dB in the range of 2-6.7GHz, and the transmittance of S21 in the range of 16.2-17GHz is greater than -2dB. (The overall transmittance is greater than 80%), and the overall light transmittance is greater than 75%, showing good light transmittance, stealth, and wave transmittance.

Example 2

This embodiment provides a frequency selective surface structural member with high light transmittance. The frequency selective components are arranged periodically, and the number is multiple. The multiple frequency selective components are distributed in a matrix. One side of the transparent medium parts is connected at the center line and arranged symmetrically and evenly, so that the projected shape of the four transparent medium parts on the transparent high-frequency wave-transmitting layer is a cross shape with a period of 17.5 mm.

In the transparent low-frequency wave absorbing layer, the length of the ITO transparent conductive patch is 15.8mm and the width is 0.5mm; the length of the long side of the ITO transparent resonant box ring is 4mm, and the length of the short side is 2mm. The width of the long and short sides is 0.2mm, the width of the opening is 0.3mm, and the resistance value of the chip resistor is 250Ω.

In the transparent high-frequency wave-transmitting layer, the outer diameter of the ITO transparent wave-transmitting resonant slot is 14mm, the width is 3.5mm, and the number of the transparent high-frequency wave-transmitting layer is one.

Both the transparent medium part and the transparent medium layer are glass, and the thickness is 0.6mm.

As shown in Figure 6, the electromagnetic simulation with TE and TM waves shows that the S-parameters of the two polarizations are basically the same. In 2.0-6.0GHz, both S11 and S21 are less than -10dB, and in 14.5-16.7GHz, the transmittance of S21 is greater than - 2dB (overall transmittance is greater than 80%), the overall transmittance is greater than 75%, showing good light transmission stealth wave transmission performance.

The above are the preferred specific embodiments of the present invention, but the protection scope of the present invention is not limited to this. Changes or substitutions should be covered within the protection scope of the present invention.

Claims (10)

1. a high transmittance frequency selective surface structure is characterized in that, comprises frequency selective assembly, and described frequency selective assembly comprises transparent cover plate, transparent low-frequency wave-absorbing layer and transparent high-frequency wave-transmitting layer stacked successively; The transparent low-frequency wave absorbing layer includes a transparent dielectric member and a transparent resonant square ring, a chip resistor and a transparent conductive patch arranged on the transparent dielectric member, and the transparent resonant square ring passes through the transparent conductive patch and the chip resistor. connect; The transparent high-frequency wave-transmitting layer includes a transparent medium layer and a transparent wave-transmitting resonance groove arranged on the transparent medium layer. 2. The frequency selective surface structural member of high light transmittance according to claim 1, wherein the transparent cover is a PC cover, a PMMA cover, a PVC cover, a PS cover, and a glass cover one or more stacked arrangements. 3 . The frequency selective surface structural member with high light transmittance according to claim 1 , wherein the transparent dielectric member is a PC dielectric member, a PMMA dielectric member, a PVC dielectric member, a PS dielectric member or a glass dielectric member. 4 . one or more stacked arrangements of; And/or, the transparent resonant square ring is an ITO resonant square ring; And/or, the transparent conductive patch is an ITO conductive patch. 4. The frequency selective surface structural member with high light transmittance according to claim 1, wherein the transparent medium layer is a PC medium layer, a PMMA medium layer, a PVC medium layer, a PS medium layer, and a glass medium layer. one or more stacked arrangements of; And/or, the transparent wave-transmitting resonance slot is an ITO wave-transmitting resonance slot. 5 . The frequency selective surface structural member with high light transmittance according to claim 1 , wherein the center line of the transparent low-frequency wave-absorbing layer and the vertical center line of the transparent high-frequency wave-transmitting layer are 5 . coincide. 6. The frequency selective surface structural member with high light transmittance according to any one of claims 1 to 4, wherein the cross-sectional shape of the transparent low-frequency wave-absorbing layer and the transparent high-frequency wave-transmitting layer is a square or diamond. 7 . The frequency selective surface structural member with high light transmittance according to claim 6 , wherein the side lengths of the cross-sections of the transparent low-frequency wave-absorbing layer and the transparent high-frequency wave-transmitting layer are 15-25 mm. 8 . 8 . The frequency selective surface structural member with high light transmittance according to claim 1 , wherein the wave-transmitting resonant groove is circular in shape, with an outer diameter of 12-20 mm and a width of 12-20 mm. 9 . 2～5mm. 9 . The frequency selective surface structural member with high light transmittance according to claim 8 , wherein the number of the transparent high-frequency wave-transmitting layers is multiple layers, and the multiple transparent high-frequency wave-transmitting layers are stacked in layers. 10 . 10 . The frequency selective surface structure with high light transmittance according to claim 9 , wherein the gap between two adjacent transparent high-frequency wave-transmitting layers is 3-6 mm. 11 .

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