CN216351591U - 2D/3D convertible lens array, integrated imaging display and acquisition device - Google Patents
2D/3D convertible lens array, integrated imaging display and acquisition device Download PDFInfo
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Abstract
The application relates to a 2D/3D switchable lens array suitable for integrated imaging, and a 2D/3D switchable integrated imaging display device and a sub-image acquisition device applying the lens array. The lens array comprises a super lens array which is composed of a plurality of super lenses, and each super lens comprises a substrate and a nano structure; the phase change material layer is filled on the surface of the super lens and can change the refractive index according to the loaded voltage; the nanostructures constitute a building block. The integrated imaging display device comprises the lens array and the sub-image array; the sub-image acquisition device comprises the lens array and the photosensitive array. According to the technical scheme, the chromatic aberration can be reduced, the imaging quality is improved, and 2D/3D conversion imaging is facilitated.
Description
Technical Field
The application relates to the technical field of display, in particular to a lens array suitable for integrated imaging, and an integrated imaging display device and a sub-image acquisition device comprising the lens array.
Background
The integrated imaging technology is an autostereoscopic display technology, and utilizes a micro-lens array to converge a sub-image (elemental image) array on a two-dimensional display panel, so as to reproduce a three-dimensional scene and realize three-dimensional imaging. The technology can enable an observer to watch the stereoscopic image without wearing any auxiliary equipment, such as stereoscopic glasses.
The existing integrated imaging technology is easy to generate chromatic aberration and influence the imaging quality, and on the other hand, the existing integrated imaging technology is more complex when 2D/3D image display needs to be converted.
SUMMERY OF THE UTILITY MODEL
To the problems in the prior art, the application provides a lens array suitable for integrated imaging, and an integrated imaging display device and a sub-image acquisition device comprising the lens array, so that the quality of integrated imaging is improved, and convenient 2D/3D conversion is realized.
A first aspect of the present application provides a lens array comprising:
the super lens array consists of a plurality of super lenses, and each super lens comprises a substrate and a nano structure arranged on the surface of the substrate;
the phase change material layer covers the surface of the super lens and can change the refractive index according to the loaded voltage;
wherein the nanostructures constitute at least one building block.
Preferably, the phase change material layer is specifically a GST layer, and is provided with an electrode, so that when a preset voltage is applied, the refractive index of the phase change material layer is changed to be the same as the refractive index of the superlens at the corresponding position.
Preferably, the phase change material layer is filled between the nanostructures.
Preferably, the structural units are arranged in an array with the arrangement period of 200 nm-1500 nm.
Preferably, the structural unit is a regular hexagon, and each vertex and the central position of the regular hexagon are provided with at least one nano structure.
Preferably, the structural unit is a square, and at least one nano structure is arranged at each vertex and the central position of the square.
Preferably, the structural unit is a sector, and at least one nano-structure is arranged at each vertex and the central position of the sector.
A second aspect of the present application provides an integrated imaging display device comprising:
the lens array according to the first aspect of the present application;
the sub-image array comprises sub-image units with the same number as that of the super lenses in the lens array;
an electrode electrically connected with the phase change material layer in the lens array;
the lens array is used for enabling the light rays emitted by each sub-unit to be gathered at the target position.
Preferably, the sub-picture unit comprises a film with an image.
Preferably, the sub-picture unit comprises an image display device.
Preferably, the electrodes comprise a positive electrode and a negative electrode connected with a power supply, and the positive electrode and the negative electrode are respectively arranged on two sides of the lens array; the power supply is used for providing and adjusting voltage loaded on the phase change material layer.
The third aspect of the present application provides an integrated imaging sub-image acquisition apparatus, comprising:
the lens array according to the first aspect of the present application;
the photosensitive array comprises a plurality of photosensitive units, and the number of the photosensitive units is the same as that of the superlenses in the lens array;
an electrode electrically connected with the phase change material layer in the lens array;
the lens array is used for converging light rays emitted by the target object to the photosensitive array, so that each photosensitive unit can collect image information of the target object at a corresponding angle.
Preferably, the electrodes comprise a positive electrode and a negative electrode connected with a power supply, and the positive electrode and the negative electrode are respectively arranged on two sides of the lens array; the power supply is used for providing and adjusting voltage loaded on the phase change material layer.
The technical scheme of the application has the advantages that:
the super lens is used for replacing a spherical mirror in the prior art, the super lens is used as a planar optical device, the chromatic aberration of an imaging system can be reduced, further, the super surface on the super lens can realize the function of broadband achromatism by designing proper nano-column parameters, and the imaging quality of integrated imaging is greatly improved. On the other hand, the phase-change material is filled on the super lens, and the refractive index of the phase-change material can be changed by adjusting the voltage loaded on the super lens. When the refractive index of the phase-change material is the same as that of the super-lens nano-pillar, the super-lens layer no longer has a convergence effect on light rays, the effect is equivalent to a parallel flat plate, and the sub-image array is displayed as a two-dimensional image, so that the 2D/3D display conversion can be conveniently realized.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the application.
Drawings
FIG. 1 is a schematic diagram of a sub-graph collection embodiment in the present application;
FIG. 2 is a schematic diagram of an embodiment of a three-dimensional display according to the present application;
FIG. 3 is a schematic cross-sectional view of a superlens with phase change material of the present application;
FIG. 4 is a schematic view of a transmissive super-surface in the present application;
FIG. 5 is a schematic view of a super-surface regular hexagonal structural unit in the present application;
FIG. 6 is a schematic diagram of a super-surface square structural unit in the present application;
FIG. 7 is a schematic view of a super-surface fan-shaped structural unit of the present application;
FIG. 8 is a schematic view of a nanosquared column in the present application;
FIG. 9 is a phase retardation distribution of the nanostructure at the center wavelength in the example;
FIG. 10 is a phase delay profile of the nanostructure with respect to frequency in the example;
FIG. 11 is a graph of broadband group delay matching for different nanorods;
FIG. 12 shows amorphous silicon, Ge2Sb2Se5Refractive index profile in the near infrared band (crystalline versus amorphous).
The figure is marked with:
1 a superlens array; 2, sub-graph array; 3, a photosensitive array;
11 a substrate; 12 a super-surface structure; 121 a nanostructure; 13 a phase change material; 14 electrodes.
Detailed Description
Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present application. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the present application, as detailed in the appended claims.
The terminology used in the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the utility model. As used in this specification and the appended claims, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the term "and/or" as used herein refers to and encompasses any and all possible combinations of one or more of the associated listed items.
It is to be understood that although the terms first, second, third, etc. may be used herein to describe various information, such information should not be limited to these terms. These terms are only used to distinguish one type of information from another. For example, first information may also be referred to as second information, and similarly, second information may also be referred to as first information, without departing from the scope of the present application. The word "if" as used herein may be interpreted as "at … …" or "when … …" or "in response to a determination", depending on the context. The features of the following examples and embodiments may be combined with each other without conflict.
The existing integrated imaging technology is composed of a sub-image acquisition system and a reproduction system, wherein the acquisition of the sub-image can be realized through computer simulation, and the three-dimensional image reproduction is realized through an optical system. The optical system consists of a group of micro lens arrays with the same number as the subgraphs, and the subgraph arrays obtained by computer simulation can be reproduced at target positions through the micro lens arrays. The sub-image array is obtained by shooting at different positions by a virtual camera in the computer. Therefore, when the observer views the reproduced three-dimensional image at different viewing angles, the left and right eyes can see different sub-images, i.e., parallax images, thereby observing the three-dimensional image.
The microlens array required in the integrated imaging technology is generally a spherical mirror, and the utility model discloses a research discovery, imaging system has the colour difference among the prior art because, the glass that makes the spherical mirror has different refracting indexes to the light of different wavelength, therefore microlens can produce colour difference, influences the quality of formation of image. In addition, in order to improve the resolution of the reproduced image, the number of microlenses per unit area needs to be increased, which leads to a reduction in the size of the microlenses and thus aggravates chromatic aberration. Based on the reasons, the technical scheme of the application selects the superlens to replace the spherical mirror, the superlens is used as a planar optical device, the chromatic aberration of an imaging system can be reduced, the supersurface on the superlens can realize the function of broadband achromatism through designing proper nano-column parameters, and the imaging quality of integrated imaging is greatly improved.
In the integrated imaging device in the prior art, when a two-dimensional image and a three-dimensional image need to be converted, a micro-lens array formed by convex lenses is used, a microfluidic channel is formed by processing Polydimethylsiloxane (PDMS) on the uppermost layer, and liquid can be injected and discharged through a hole on the upper surface of the PDMS layer. When no liquid exists in the microfluidic channel, the micro-lens array can realize the function of three-dimensional display; when liquid with the same refractive index as that of the micro lens is injected into the microfluidic channel, the whole system can be equivalent to a flat plate, and light rays are not converged, so that the whole system can be used as a two-dimensional display device. Therefore, in the prior art, when 2D/3D conversion is performed, liquid needs to be injected/discharged, the structure is complicated, and the conversion speed is slow. In order to solve the technical problem, the phase-change material affected by the voltage is selected and covered on the lens array so as to realize 2D/3D display conversion.
The technical solution of the present application will be clearly and completely described below with reference to the accompanying drawings and exemplary embodiments.
Example 1
As shown in fig. 3, this example provides a lens array suitable for integrated imaging, which can be applied to both the acquisition system of sub-image array and the reproduction system for reproducing three-dimensional objects according to the principle of optical path reversibility. The method specifically comprises the following steps:
a superlens array 1 configured to converge light rays, composed of a plurality of superlenses including a substrate 11 and a super-surface structure 12; the phase change material layer 13 is filled on the surface of the super lens and can change the refractive index according to the loaded voltage; wherein the super-surface structure comprises at least one structural unit, and the structural unit comprises a nano-structure arranged on the surface of the substrate.
It should be understood that each superlens in the above superlens array is a separate imaging system. The super-surface structure is a transmission-type super-surface as shown in fig. 4, and the super-surface is composed of a substrate and nano-structures periodically arranged on the substrate. The substrate is made of a material transparent in the visible light band, and preferably, the substrate material is quartz glass, crown glass, flint glass, or the like. The working wave band of the super surface is visible light (380-760 nm), or at least one wave band (the wave band central wavelength is lambada c, and the bandwidth is delta lambada). The super surfaces are arranged according to a period, optionally, the arrangement period is 200-1500 nm, and a nano structure is arranged at the center or the vertex of the period. The nanostructure material is a visible light transmissive material, and the selectable materials include: titanium oxide, silicon nitride, gallium phosphide, aluminum oxide, hydrogenated amorphous silicon, and the like. The nanostructures are preferably polarization independent structures, such as nanofins and nanoellipsoids, which impart a geometric phase to incident light and are desirably non-dispersive to visible light.
In a preferred embodiment of embodiment 1, the phase change material layer is embodied as a GST layer, i.e. Ge2Sb2Te5And provided with an electrode 14. Adjusting the external voltage to which the electrodes are connected may cause the phase change material to switch between crystalline and amorphous states, with a consequent change in refractive index. When the refractive index of the phase-change material is the same as that of the super-lens nano-pillars, the super-lens layer no longer has a convergence effect on light rays, the effect is equivalent to a parallel flat plate, and the sub-image array is displayed as a two-dimensional image; when the phase change material refractive index is different from that of the superlens nanocolumns, the superlens can realize the reproduction-collection function described in embodiment 1. Specifically, the electrically-controlled phase-change material Ge2Sb2Se5The GST is amorphous and has a refractive index of about 3.1 when a voltage is applied, and the superlens can converge light to display a three-dimensional image; when no voltage is applied, the GST is crystalline and its refractive index is close to that of amorphous silicon, as shown in fig. 12, the system is equivalent to a flat panel, displaying a two-dimensional image.
In the preferred embodiment of embodiment 1, the phase change material layer is filled between the nanostructures, which can also play a role in protecting the nanostructures.
In the preferred embodiment of embodiment 1, as shown in fig. 3, the first pole of the electrode 14 is disposed on the superlens substrate 11, and the second pole is disposed on the outer surface of the phase change material layer.
In the preferred embodiment of embodiment 1, the electrodes 14 are shown electrically connected to a power source and control circuitry for controlling the voltage.
In the preferred embodiment of embodiment 1, the structural units in the super-surface structure are arranged in an array with a period of 200nm to 1500 nm. Further, the structural units may have various shapes, as shown in fig. 5 to 7, and may be specifically regular hexagons, squares, and sectors.
In a preferred embodiment of embodiment 1, the structural units are regular hexagons, and at least one nanostructure is arranged at each vertex and central position of the regular hexagons. Or the structural unit is a square, and at least one nano structure is arranged at each vertex and the center of the square. Ideally, the structural units should be hexagonally-arranged and centrally-arranged nanostructures or quadrate-arranged and centrally-arranged nanostructures, and it should be understood that the actual product may have the loss of nanostructures at the edge of the superlens due to the limitation of the superlens shape, so that the actual product does not satisfy the complete hexagon/quadrate. Specifically, as shown in fig. 5 to 7, the structural units are formed by regularly arranging nanostructures, and a plurality of structural units are arranged in an array to form a super-surface structure. And searching the nanostructure with the closest phase in the nanostructure database according to the phase required by the nanostructure at different wavelengths.
One embodiment, as shown in fig. 5, includes a central nanostructure surrounded by 6 peripheral nanostructures at equal distances, each of which is circumferentially distributed to form a regular hexagon, which can also be understood as a combination of regular triangles formed by a plurality of nanostructures.
One embodiment, as shown in fig. 6, is a central nanostructure surrounded by 4 peripheral nanostructures spaced equally apart from each other to form a square.
It can also be a fan shape, as shown in fig. 7, comprising one central nanostructure and four peripheral nanostructures. The fan-shaped structural units are different from regular hexagons and squares in arrangement form, are arranged in a circumferential array around a central nanostructure (the lower left corner in fig. 7), and are arranged in the central nanostructure in a layered surrounding manner.
In the preferred embodiment of embodiment 1, in order to achieve broadband achromatization in the visible band, the phase of the microlens modulation should satisfy the following relationships with the angular frequency of the light wave, the position on the lens, and the focal length:
where r represents the distance from any point of the lens to the center of the circle, f is the focal length, ω is the angular frequency of the light wave, and c is the speed of light.
In this example, the center wavelength is 2 μm and the bandwidth is 200 nm. The nano structure of the super surface is shown in FIG. 8, the substrate is glass, and the period is 740 nm; the nano square column material is amorphous silicon, the height is 800nm, and the selected structure size is shown in the following table.
| Number of |
1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |
| W1/nm | 220 | 340 | 450 | 530 | 550 | 600 | 610 | 670 |
| W2/nm | 660 | 540 | 560 | 420 | 380 | 320 | 280 | 190 |
FIG. 9 shows the phase retardation distribution of the chosen nano-ring column structure at a wavelength of 2 μm, so that a superlens with a focal length of 1mm and a diameter of 500 μm can be designed. Fig. 10 shows the phase control of the square column 5 in the application band, and the phase distribution satisfies the above formula. The broadband group delay matching is used for evaluating the modulation effect of the nano-square columns with different sizes on the light waves with different wavelengths, and is defined as follows:
wherein, taugFor the designed structure to have a group delay, τrefIs the targeted group delay, fig. 10 shows the broadband group delay matching for the chosen nanoprisms. In order to realize the function of three-dimensional display, a 50 × 50 superlens array is provided, the number of superlenses can be other numbers, and the size of the whole display is 2.8 × 2.8 cm.
Example 2
The present example relates to an integrated imaging display device, which includes the lens array of embodiment 1 and its preferred embodiments; and other devices and the lens array are arranged to jointly form a light path structure so as to realize the reproduction function of integrated imaging, and the method specifically comprises the following steps:
the sub-image array comprises sub-image units with the same number as that of the super lenses in the lens array; it should be understood that the subgraph can be generated by computer simulation, and therefore only the composition and principle of the reproduction system are explained in detail in this embodiment. The number of sub-picture elements should be comparable to the number of superlenses. The sub-image may be an image on a film or an image displayed by a display device such as an LCD or LED. As shown in fig. 2, the light emitted from the sub-image array passes through the converging action of the superlens to the target position, and the three-dimensional image is reproduced.
It should be understood that the integrated imaging display device in this example can easily and quickly realize the conversion between 2D and 3D imaging by the characteristics of the lens array described in embodiment 1. By adjusting the voltage loaded on the phase change material electrode, the phase change material can be switched between a crystalline state and an amorphous state, and the refractive index is changed along with the switching. When the refractive index of the phase-change material is the same as that of the super-lens nano-pillars, the super-lens layer no longer has a convergence effect on light rays, the effect is equivalent to a parallel flat plate, and the sub-image array is displayed as a two-dimensional image at the moment.
It should be understood that the sub-arrays, units, etc. should also be provided with light sources, or have self-light emitting function, similar to the prior art, and will not be described in detail in this embodiment.
In a preferred embodiment of the present embodiment, electrodes are disposed on two sides of the lens array to apply a voltage to the phase change material, so that the phase change material can change the refractive index, thereby realizing the conversion between 2D and 3D. More specifically, the electrodes comprise a positive electrode and a negative electrode, and the periphery of the phase change material specifically comprises the following structures in sequence: the structure comprises a positive/negative electrode, a super lens substrate, a nano structure on the surface of the super lens, a phase change material layer and a positive/negative electrode; in a further preferred embodiment, the nanostructure can be embedded in the phase change material layer, so that the phase change material layer can have the function of a protective layer, and the nanostructure is prevented from being damaged. The electrodes can be arranged at positions on the lens array which do not affect imaging, or transparent materials can be selected to cover the surface of the lens array; or in the form of deposition or plating on the surface of the lens array. The electrodes are connected to a power supply for supplying a voltage, which power supply should comprise a circuit configuration capable of regulating the voltage on the electrodes.
In a preferred embodiment, the material of the positive/negative electrode can be selected from ITO (indium tin oxide) or graphene, which are transparent and conductive for the working band of the embodiment, infrared light. The ITO absorbs infrared light more than graphene, but the processing technology is relatively mature.
In a preferred embodiment, for the electrode on the substrate side, sufficient space for connecting the electrodes can be provided by a form in which the substrate and the electrode are extended simultaneously, i.e., the substrate and the lower electrode have a larger diameter than the upper layer structure; the lower electrode may be directly connected from the side surface to apply a voltage.
Example 3
The example relates to an integrated imaging sub-image acquisition device, which comprises the lens array in the embodiment 1 and the preferred embodiments thereof; and other devices and the lens array are arranged to jointly form a light path structure so as to realize a sub-image acquisition function for integrated imaging, and the sub-image acquisition function specifically comprises the following steps:
the photosensitive array comprises a plurality of photosensitive units, and the number of the photosensitive units is the same as that of the superlenses in the lens array; the lens array is used for enabling light rays emitted by the target object to converge on the photosensitive array, and the photosensitive unit can collect image information of the target object. It should be understood that each photosensitive unit can form a light path with a corresponding superlens, and record image information of a target object at a corresponding angle, image information of the target object in various directions and angles can be recorded through the photosensitive array, and specific parameters of imaging and sub-image acquisition can be finely adjusted by adjusting voltage loaded on the phase-change material electrode.
The present embodiment may further include an electrode and a power supply structure similar to those in embodiment 2, and for the sake of brevity, the description is not repeated here.
The above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (13)
1. A 2D/3D switchable lens array, comprising:
the super lens array is composed of a plurality of super lenses, and each super lens comprises a substrate and a nano structure arranged on the surface of the substrate;
the phase change material layer covers the surface of the super lens and can change the refractive index according to the loaded voltage;
wherein the nanostructures constitute at least one building block.
2. The lens array as claimed in claim 1, wherein the phase change material layer is a GST layer capable of changing its refractive index to be the same as that of the corresponding position of the superlens when a predetermined voltage is applied.
3. The lens array of claim 1 or 2, wherein the phase change material layer is filled between the nanostructures.
4. The lens array of claim 1, wherein the structural units are arranged in an array with a period of 200nm to 1500 nm.
5. The lens array of claim 4, wherein the structural units are regular hexagons, and at least one nanostructure is disposed at each vertex and center of the regular hexagons.
6. The lens array of claim 4, wherein the structural unit is a square, and at least one nanostructure is disposed at each vertex and center of the square.
7. The lens array of claim 4, wherein the structural unit is a sector, and at least one nanostructure is disposed at each vertex and center of the sector.
8. A 2D/3D convertible integrated imaging display device, comprising:
a lens array as claimed in any one of claims 1 to 7;
the sub-image array comprises sub-image units with the same number as that of the super lenses in the lens array;
an electrode electrically connected with the phase change material layer in the lens array;
the lens array is used for enabling the light rays emitted by each sub-unit to be gathered at the target position.
9. The integrated imaging display device according to claim 8, wherein said sub-picture element comprises a film with an image.
10. The integrated imaging display device according to claim 8, wherein said sub-picture element comprises an image display device.
11. The integrated imaging display device according to claim 8, wherein the electrodes comprise a positive electrode and a negative electrode connected to a power supply, respectively disposed on both sides of the lens array; the power supply is used for providing and adjusting voltage loaded on the phase change material layer.
12. A2D/3D convertible integrated imaging subgraph acquisition device is characterized by comprising:
a lens array as claimed in any one of claims 1 to 7;
the photosensitive array comprises a plurality of photosensitive units, and the number of the photosensitive units is the same as that of the superlenses in the lens array;
an electrode electrically connected with the phase change material layer in the lens array;
the lens array is used for converging light rays emitted by the target object to the photosensitive array, so that each photosensitive unit can collect image information of the target object at a corresponding angle.
13. The integrated imaging subgraph acquisition device according to claim 12, wherein the electrodes comprise a positive electrode and a negative electrode connected with a power supply, and the positive electrode and the negative electrode are respectively arranged on two sides of the lens array; the power supply is used for providing and adjusting voltage loaded on the phase change material layer.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11927769B2 (en) | 2022-03-31 | 2024-03-12 | Metalenz, Inc. | Polarization sorting metasurface microlens array device |
| US11978752B2 (en) | 2019-07-26 | 2024-05-07 | Metalenz, Inc. | Aperture-metasurface and hybrid refractive-metasurface imaging systems |
| US11988844B2 (en) | 2017-08-31 | 2024-05-21 | Metalenz, Inc. | Transmissive metasurface lens integration |
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2021
- 2021-12-21 CN CN202123229065.8U patent/CN216351591U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11988844B2 (en) | 2017-08-31 | 2024-05-21 | Metalenz, Inc. | Transmissive metasurface lens integration |
| US11978752B2 (en) | 2019-07-26 | 2024-05-07 | Metalenz, Inc. | Aperture-metasurface and hybrid refractive-metasurface imaging systems |
| US11927769B2 (en) | 2022-03-31 | 2024-03-12 | Metalenz, Inc. | Polarization sorting metasurface microlens array device |
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