CN216323610U - clean body structure - Google Patents
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- 238000004140 cleaning Methods 0.000 claims abstract description 141
- 235000010627 Phaseolus vulgaris Nutrition 0.000 claims abstract description 91
- 244000046052 Phaseolus vulgaris Species 0.000 claims abstract description 91
- 230000008859 change Effects 0.000 claims abstract description 21
- 230000007246 mechanism Effects 0.000 claims description 6
- 230000002457 bidirectional effect Effects 0.000 claims description 3
- 239000006260 foam Substances 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims 1
- 230000001680 brushing effect Effects 0.000 abstract description 8
- 238000010586 diagram Methods 0.000 description 15
- 238000007431 microscopic evaluation Methods 0.000 description 5
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000012916 structural analysis Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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Abstract
Description
技术领域technical field
本实用新型有关于一种清洁体结构,尤指一种以平面接触晶圆相较于曲面接触晶圆,可提供较少且稳定的面积变化量的清洁体结构,特别是指可增强刷洗的清洁能力与更稳定的晶圆表面摩擦力的清洁体结构。The utility model relates to a cleaning body structure, in particular to a cleaning body structure that can provide less and stable area variation compared to the surface contacting wafer with a plane contacting the wafer, especially a cleaning body structure that can enhance brushing Cleaner structure with cleaning power and more stable wafer surface friction.
背景技术Background technique
市面贩售半导体清洗海绵大部分都是圆柱式清洁豆,如图14所示。此种传统海绵刷的单颗清洁豆在刷洗接触晶圆时并非以正面的面积去刷洗,而是先由清洁豆的侧边开始变形接触,以下压1 毫米(mm)为例,接触转至约超过回转中心点(23度)清洁豆的正面面积才会通过晶圆,如图15及图15a所示。Most of the semiconductor cleaning sponges sold in the market are cylindrical cleaning beans, as shown in Figure 14. The single cleaning bean of this traditional sponge brush does not use the frontal area to brush the contact wafer, but firstly starts to deform and contact the side of the cleaning bean. Press 1 mm (mm) below as an example. The frontal area of the cleaning bean does not pass through the wafer until approximately beyond the center of rotation (23 degrees), as shown in Figure 15 and Figure 15a.
如图16及图16a所示,以微观分析单颗圆柱式清洁豆与晶圆初始接触0.1度到通过顶面前的面积变化可见,圆柱式清洁豆接触至离开面积变化较陡峭,由于面积变化亦为力矩变化,因此从力矩上来看变化陡峭为较不稳定,在洗刷晶圆时较易造成刮伤,使得清洁能力较不佳。As shown in Fig. 16 and Fig. 16a, microscopic analysis of the area change of a single cylindrical cleaning bean from the initial contact of 0.1 degrees to the wafer before passing through the top can be seen. Because of the change of torque, the change of torque is steep and unstable, and scratches are more likely to be caused when the wafer is washed, which makes the cleaning ability poor.
鉴于目前市面上的圆柱式清洁豆,其与晶圆的初始接触都是以圆弧面接触清洗,缺点为从接触到离开晶圆清洁豆面积的变化量较为陡峭,产生较多的面积变化量,使得晶圆受力不稳定,进而降低刷洗的清洁能力与晶圆表面摩擦力的稳定度。故,一般无法符合使用者于实际使用时所需。In view of the current cylindrical cleaning beans on the market, the initial contact with the wafer is cleaned by arc surface contact. , which makes the wafer stress unstable, thereby reducing the cleaning ability of the brush and the stability of the friction force on the wafer surface. Therefore, it generally cannot meet the needs of users in actual use.
实用新型内容Utility model content
本实用新型的主要目的在于,克服已知技术所遭遇的上述问题并提供一种清洁体结构,其以平面接触晶圆,相较于传统的曲面接触晶圆,可提供较少且稳定的面积变化量,进而增强刷洗的清洁能力与更稳定的晶圆表面摩擦力。The main purpose of the present invention is to overcome the above-mentioned problems encountered in the prior art and provide a cleaning body structure, which contacts the wafer with a flat surface, which can provide a smaller and more stable area compared to the traditional curved surface contacting the wafer. The amount of change, in turn, enhances the cleaning power of the brush and more stable friction on the wafer surface.
为达以上目的,本实用新型采用技术方案是:一种清洁体结构,其包括一载体和一清洁单元,该载体呈圆管状,且其中央处具有一套接部,以该套接部与致动机构组设;其特征在于,所述清洁单元是由数个清洁豆分别定位排列于该载体的表面上,该些清洁豆为梯形柱状体,具有一个与该载体表面平行的第一端面、及二个面向该载体圆周方向并间隔在二清洁豆之间的倾斜平面,该清洁豆的第一端面与该载体表面间的距离为6.5mm±10%,而两侧的倾斜平面间的夹角为50°±10%,当各该清洁豆初始接触晶圆时,先由一侧该倾斜平面开始变形接触,令该清洁豆与该晶圆初始接触到离开该晶圆具有一平缓的面积变化趋势,使该晶圆受力稳定,以提升刷洗的清洁能力与晶圆表面摩擦力的稳定度。In order to achieve the above purpose, the technical scheme adopted by the present utility model is: a cleaning body structure, which includes a carrier and a cleaning unit, the carrier is in the shape of a circular tube, and has a socket at the center, and the socket is connected with the cleaning unit. The actuating mechanism is assembled; it is characterized in that, the cleaning unit consists of several cleaning beans positioned and arranged on the surface of the carrier respectively, and the cleaning beans are trapezoidal cylindrical bodies with a first end face parallel to the surface of the carrier , and two inclined planes facing the circumferential direction of the carrier and spaced between two cleaning beans, the distance between the first end face of the cleaning beans and the surface of the carrier is 6.5mm±10%, and the distance between the inclined planes on both sides is 6.5mm±10%. The included angle is 50°±10%. When each of the cleaning beans initially contacts the wafer, the inclined plane on one side begins to deform and contact, so that the cleaning beans and the wafer initially contact with the wafer and leave the wafer with a gentle curve. The changing trend of the area can stabilize the force of the wafer, so as to improve the cleaning ability of brushing and the stability of the friction force on the surface of the wafer.
于本创作上述实施例中,所述清洁豆为等腰梯形柱状体。In the above-mentioned embodiments of the present invention, the cleaning beans are isosceles trapezoid cylinders.
于本创作上述实施例中,所述清洁豆的第一端面具有一中心下凹的凹弧部,且该凹弧部的曲率介于70%~99%之间。In the above-mentioned embodiment of the present invention, the first end surface of the cleaning bean has a concave arc portion with a concave center, and the curvature of the concave arc portion is between 70% and 99%.
于本创作上述实施例中,两两所述清洁豆之间具有一间隙。In the above-mentioned embodiments of the present invention, there is a gap between the cleaning beans.
于本创作上述实施例中,两两所述清洁豆之间的间隙为等间距或不等间距中的任一种或其组合。In the above-mentioned embodiments of the present invention, the gaps between the two cleaning beans are any one of equal spacing or unequal spacing, or a combination thereof.
于本创作上述实施例中,所述清洁豆以蜂巢式、等距离、螺旋式或双向螺旋式排列设置。In the above embodiments of the present invention, the cleaning beans are arranged in a honeycomb, equidistant, spiral or bidirectional spiral arrangement.
于本创作上述实施例中,所述载体与该清洁单元是以软性泡棉发泡一体成型所构成。In the above-mentioned embodiments of the present invention, the carrier and the cleaning unit are integrally formed with a soft foam.
于本创作上述实施例中,所述清洁豆的中心延伸轴线与该载体中心至该晶圆的连线夹有一回转夹角,当各该清洁豆由一侧的倾斜平面开始变形接触,假设下压1 mm,该载体带动该清洁单元接触转至超过该回转夹角时,该清洁豆将以该第一端面面积通过该晶圆。In the above-mentioned embodiments of the present invention, the central extension axis of the cleaning bean and the connection line from the center of the carrier to the wafer form a rotational angle. Press 1 mm, when the carrier drives the cleaning unit to contact and rotate beyond the rotation angle, the cleaning bean will pass through the wafer with the first end surface area.
于本创作上述实施例中,所述清洁豆的第一端面的外围形状呈四方圆角长方形。In the above-mentioned embodiment of the present invention, the outer shape of the first end surface of the cleaning bean is a rectangle with four squares and rounded corners.
于本创作上述实施例中,所述清洁豆更具有一与该载体表面连接的第二端面,该第二端面中心点至一侧该倾斜平面的距离为4mm±10%。In the above-mentioned embodiment of the present invention, the cleaning bean further has a second end surface connected to the surface of the carrier, and the distance from the center point of the second end surface to one side of the inclined plane is 4mm±10%.
附图说明Description of drawings
图1是本实用新型一实施例的侧面结构示意图。FIG. 1 is a schematic side view of the structure of an embodiment of the present invention.
图2是本实用新型一实施例的梯形柱状清洁豆结构示意图。2 is a schematic structural diagram of a trapezoidal columnar cleaning bean according to an embodiment of the present invention.
图3是本实用新型清洁豆的结构分析示意图。3 is a schematic diagram of the structural analysis of the cleaning bean of the present invention.
图4是本实用新型微观分析清洁体单颗梯形柱状清洁豆与晶圆初始接触到离开晶圆面积的变化示意图。4 is a schematic diagram of the change in the area of a single trapezoidal columnar cleaning bean of the microscopic analysis cleaning body of the present invention from the initial contact with the wafer to the time it leaves the wafer.
图4a是图4中的部分放大图。FIG. 4a is a partial enlarged view of FIG. 4 .
图5是本实用新型微观分析单颗梯形柱状清洁豆与晶圆初始接触0.1度到通过第一端面前的面积变化示意图。FIG. 5 is a schematic diagram of the microscopic analysis of the area change of a single trapezoidal columnar cleaning bean and a wafer from an initial contact of 0.1 degrees to before passing through the first end of the present invention.
图5a是图5所示的面积随接触角度变化图。FIG. 5a is a graph of the area shown in FIG. 5 as a function of contact angle.
图6是本实用新型与传统的单颗清洁豆与晶圆接触角度的面积变化示意图。FIG. 6 is a schematic diagram of the area change of the contact angle between the present invention and the conventional single cleaning bean and the wafer.
图7是本实用新型与传统的清洁豆在接触面积与接触角度的比较示意图。FIG. 7 is a schematic diagram comparing the contact area and the contact angle between the utility model and the conventional cleaning beans.
图8是本实用新型与传统的清洁豆在接触面积与接触角度的比较示意图二。FIG. 8 is a schematic diagram 2 comparing the contact area and the contact angle between the utility model and the traditional cleaning beans.
图9是本实用新型与传统的清洁豆在增加接触面积与接触角度的比较示意图三。9 is a schematic diagram 3 comparing the increase of the contact area and the contact angle between the utility model and the traditional cleaning beans.
图10是本实用新型与传统的清洁豆在接触面积与接触角度的比较示意图四。FIG. 10 is a schematic diagram 4 comparing the contact area and the contact angle between the utility model and the traditional cleaning beans.
图11是本实用新型与传统的清洁豆在接触面积与接触角度的比较示意图五。Fig. 11 is a schematic diagram 5 comparing the contact area and the contact angle between the utility model and the conventional cleaning beans.
图12是本实用新型与传统的清洁豆在增加接触面积与接触角度的比较示意图六。FIG. 12 is a schematic diagram 6 comparing the increase of the contact area and the contact angle between the utility model and the traditional cleaning beans.
图13是本实用新型与传统的清洁豆在增加接触面积与接触角度的比较示意图七。FIG. 13 is a seventh schematic diagram comparing the increase of the contact area and the contact angle between the utility model and the traditional cleaning beans.
图14是已知圆柱式清洁豆结构示意图。Figure 14 is a schematic diagram of the structure of a known cylindrical cleaning bean.
图15是微观分析已知刷子单颗图柱式清洁豆与晶圆初始接触到离开晶圆面积的变化示意图。FIG. 15 is a schematic diagram showing the change of the area from the initial contact with the wafer to the area of leaving the wafer, known from the microscopic analysis.
图15a是图15中的部分放大图。FIG. 15a is a partial enlarged view of FIG. 15 .
图16是微观分析已知单颗圆柱式清洁豆与晶圆初始接触0.1度到通过顶面前的面积变化示意图。Fig. 16 is a schematic diagram showing the area change of a single cylindrical cleaning bean and the wafer from the initial contact of 0.1 degrees before passing through the top of the wafer known by microscopic analysis.
图16a是图16所示的面积随接触角度变化图。FIG. 16a is a graph of the area shown in FIG. 16 as a function of contact angle.
标号对照:Label comparison:
清洁体结构100
载体10
套接部11
清洁单元20
清洁豆21Clean Beans 21
第一端面211first end face 211
第二端面212
倾斜平面213
晶圆30
中心延伸轴线ACenter extension axis A
连线B。Connection B.
具体实施方式Detailed ways
请参阅图1至图13,如图所示:本实用新型为一种清洁体结构100,其包括一载体10以及一清洁单元20所构成,而该载体10与该清洁单元20可依所需以复合材料、海绵、聚胺甲酸酯(PU)、聚乙烯醇(PVA)或高分子材料等不同的软性泡棉发泡一体成型制成。Please refer to FIG. 1 to FIG. 13, as shown in the figures: the present invention is a cleaning
上述所提的载体10呈圆筒状,且其中央处具有一套接部11,以该套接部11与致动机构(图中未示)组设。The above-mentioned
该清洁单元20布设于该载体10的外侧缘,其由数个清洁豆21分别定位排列于该载体10表面。该些清洁豆21为梯形柱状体(例如:等腰梯形柱状体,如图2所示),各具有一与该载体10表面平行的第一端面211、一与该载体10表面连接的第二端面212、及二面向该载体10圆周方向并间隔在二清洁豆21之间的倾斜平面213。其中,该清洁豆21的第一端面211的外围形状呈四方圆角长方形,其与该载体10表面间的距离为6.5 mm,该第二端面212中心点至一侧倾斜平面213的距离为4 mm,而两侧该倾斜平面213间的夹角为50°,如图3所示。如是,借由上述揭露的装置构成一全新的清洁体结构100。The
于一实施例中,上述该清洁豆21的第一端面211分别具有一中心下凹的凹弧部(图中未示),且该凹弧部的曲率介于70%~99%之间。In one embodiment, the first end surfaces 211 of the cleaning
于一实施例中,上述各该清洁豆21之间具有一间隙,该间隙可为等间距、不等间距任一者或其组合,借此使各该清洁豆21可以蜂巢式、等距离、螺旋式、或双向螺旋式的排列方式设置在该载体10表面上。In one embodiment, there is a gap between the cleaning
当运用时,可使一个或多数个载体10利用其套接部11与相关的致动机构(图中未示)组装,使致动机构以滚动的方式带动载体10,并依所需的清洁状态及位置移动致动机构,使载体10外侧缘上清洁单元20的清洁豆21与相关精密电子元件的表面接触进行所需的清洁。于一较佳实施例中,在水平式清洗运动时,假设精密电子元件(如:晶圆30)在原位会以顺时钟或逆时钟方向转,具清洁单元2的圆筒状载体10也会旋转,如图4所示的顺时钟方向转,当各清洁豆21初始接触晶圆30时,每一颗清洁豆21在刷洗接触晶圆30时一定不会是以第一端面211的面积去刷洗,而是先由一侧倾斜平面213开始变形接触,以下压1 mm为例,载体10带动清洁单元20接触转至超过一回转夹角时,意即,当超过各清洁豆21的中心延伸轴线A与载体10中心至晶圆30的连线B的夹角为17.64度时,各清洁豆21的第一端面211面积才会通过晶圆30。如图5所示,各清洁豆21与晶圆30初始接触到离开晶圆30具有一平缓的面积变化趋势,使晶圆30受力稳定,以提升刷洗的清洁能力与晶圆30表面摩擦力的稳定度。When in use, one or
将传统圆柱式清洁豆与本创作所提梯形柱状清洁豆进行比较,如图6所示,图中显示30个运转角度面积变化,由前面0~3度看起来圆柱式清洁豆比较趋缓(见白底虚线),中段后则是本创作所提梯形柱状清洁豆比较趋缓(见黑底实线)。由此可见,与传统圆柱式清洁豆相比,本创作所提梯形柱状体结构的清洁豆从接触至离开面积变化较趋缓,圆柱式清洁豆较陡峭,从力矩(torque)上来看变化趋缓的较为稳定,可在洗刷晶圆时较不易造成刮伤,提供较好的清洁能力。Comparing the traditional cylindrical cleaning beans with the trapezoidal cylindrical cleaning beans proposed in this work, as shown in Figure 6, the figure shows the area changes of 30 operating angles. See the dashed line on the white background), and after the middle section, the trapezoidal columnar clean beans mentioned in this creation tend to slow down (see the solid line on the black background). It can be seen that, compared with the traditional cylindrical cleaning beans, the cleaning beans with the trapezoidal column structure proposed in this work have a slower change in area from contact to separation, while the cylindrical cleaning beans are steeper, and the change trend in terms of torque Slow and stable, it is less likely to cause scratches when washing the wafer, and provides better cleaning ability.
承上述,鉴于清洁豆两侧倾斜平面间的夹角越大面积,力矩反应会越平缓,因此本创作以市面常见16排清洁豆制作最大可至约50度。Based on the above, in view of the larger the angle between the inclined planes on both sides of the cleaning beans, the smoother the torque response will be. Therefore, this creation can be made with 16 rows of common cleaning beans in the market to a maximum of about 50 degrees.
本创作另将传统圆柱式清洁豆与本创作所提梯形柱状清洁豆进行一系列比较,如图7-图13所示。其中,比较传统圆柱式清洁豆与本创作所提梯形柱状清洁豆在相同的长度(梯形柱状清洁豆的长与圆柱式清洁豆的直径)下,梯形柱状清洁豆的面积变化总量小于圆柱式清洁豆,可提供较稳定的刷洗转速变化(或力矩变化),如图12所示。并且,在每个角度面积差值的变化量方面,本创作所提梯形柱状清洁豆的最大变化量明显比传统圆柱式清洁豆小,因此可提供较稳定的刷洗转速变化(或力矩变化),如图9所示。This creation also makes a series of comparisons between the traditional cylindrical cleaning beans and the trapezoidal cylindrical cleaning beans proposed in this creation, as shown in Figure 7-Figure 13. Among them, when comparing the traditional cylindrical cleaning beans and the trapezoidal cylindrical cleaning beans proposed in this work with the same length (the length of the trapezoidal cylindrical cleaning beans and the diameter of the cylindrical cleaning beans), the total area change of the trapezoidal cylindrical cleaning beans is smaller than that of the cylindrical cleaning beans. Cleaning beans can provide a relatively stable brush speed change (or torque change), as shown in Figure 12. In addition, in terms of the variation of the area difference of each angle, the maximum variation of the trapezoidal cylindrical cleaning beans proposed in this creation is significantly smaller than that of the traditional cylindrical cleaning beans, so it can provide a relatively stable brushing speed change (or torque change), As shown in Figure 9.
借此,本创作所提清洁体结构的技术特点为初始接触以面接触清洗,优点为从接触到离开晶圆清洁豆面积的变化量较为平缓,晶圆受力也较为稳定。经上述实验数据,可证明本创作以平面接触晶圆相较于传统的曲面接触晶圆,可提供较少且稳定的面积变化量,进而增强刷洗的清洁能力与更稳定的晶圆表面摩擦力。Therefore, the technical feature of the cleaning body structure proposed in this creation is that the initial contact is cleaned by surface contact, and the advantage is that the change in the area of the cleaning bean from contacting to leaving the wafer is relatively gentle, and the force on the wafer is relatively stable. According to the above experimental data, it can be proved that compared with the traditional surface contact wafer, the flat contact wafer can provide less and stable area change, thereby enhancing the cleaning ability of brushing and more stable wafer surface friction .
综上所述,本实用新型的清洁体结构,可有效改善现有技术的种种缺点,以平面接触晶圆可较曲面接触晶圆提供较少且稳定的面积变化量,从而增强刷洗的清洁能力与更稳定的晶圆表面摩擦力,进而使本实用新型的产生能更进步、更实用、更符合使用者所须,确已符合新型专利申请的要件,依法提出专利申请。In conclusion, the cleaning body structure of the present invention can effectively improve various shortcomings of the prior art, and the planar contact wafer can provide less and stable area variation than the curved contact wafer, thereby enhancing the cleaning ability of brushing. With a more stable frictional force on the wafer surface, the utility model can be more advanced, more practical, and more in line with the needs of users. It has indeed met the requirements for a new patent application, and a patent application is filed in accordance with the law.
但以上所述,仅为本实用新型的较佳实施例而已,当不能以此限定本实用新型实施的范围;故,凡依本创作申请专利范围及新型说明书内容所作的简单的等效变化与修饰,皆应仍属本创作专利涵盖的范围内。But the above are only the preferred embodiments of the present invention, and should not limit the scope of implementation of the present invention; therefore, any simple equivalent changes made according to the patent scope of the invention and the contents of the description of the new model and the Modifications should still fall within the scope of this creative patent.
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