CN216315589U - Silicon substrate atomizing core and atomizing device of runner structure - Google Patents
Silicon substrate atomizing core and atomizing device of runner structure Download PDFInfo
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- CN216315589U CN216315589U CN202121938410.2U CN202121938410U CN216315589U CN 216315589 U CN216315589 U CN 216315589U CN 202121938410 U CN202121938410 U CN 202121938410U CN 216315589 U CN216315589 U CN 216315589U
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- silicon substrate
- flow channel
- electrifying
- atomizing core
- conductive
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 148
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 146
- 239000010703 silicon Substances 0.000 title claims abstract description 146
- 239000000758 substrate Substances 0.000 title claims abstract description 139
- 238000010438 heat treatment Methods 0.000 claims abstract description 66
- 239000007788 liquid Substances 0.000 claims abstract description 17
- 238000000889 atomisation Methods 0.000 claims description 17
- 230000005611 electricity Effects 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 3
- 229920000742 Cotton Polymers 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 239000003921 oil Substances 0.000 abstract description 6
- 239000000779 smoke Substances 0.000 abstract description 5
- 229910001385 heavy metal Inorganic materials 0.000 abstract description 4
- 241000208125 Nicotiana Species 0.000 description 8
- 235000002637 Nicotiana tabacum Nutrition 0.000 description 8
- 230000002265 prevention Effects 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003571 electronic cigarette Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
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Abstract
The utility model relates to a silicon substrate atomizing core and an atomizing device of a flow channel structure, wherein a flow channel (2) is manufactured on a silicon substrate (1) by adopting a semiconductor manufacturing process, and an electrifying part is respectively designed to be an electrifying heating part (3) or at least one electrifying electrode (4) based on whether the silicon substrate (1) is conductive, so that the manufacturing of the atomizing core is completed, when the atomizing core works, smoke oil enters the flow channel (2) through two ends of the flow channel (2), the smoke oil in the flow channel (2) is heated and atomized by the electrifying part, and the smoke oil is only in physical contact with silicon in the whole atomizing process, so that the phenomenon that harmful gas is generated by dry burning of the atomizing core of a cotton structure is thoroughly avoided, and meanwhile, the problem that the heavy metal emission of the existing atomizing core is high is also avoided based on a heating structure of a silicon core; the whole silicon flow channel liquid guide structure is controllable, regular and compact, and the use of a semiconductor process on a silicon substrate (1) improves the problem of uneven heating of the traditional heating atomizer, and also has the advantages of good flow channel structure and resistance value consistency of products.
Description
Technical Field
The utility model relates to a silicon substrate atomizing core with a flow channel structure and an atomizing device, and belongs to the technical field of atomizing cores.
Background
At present, liquid atomizers such as electronic cigarettes and humidifiers are generally applied, an existing electronic cigarette atomizing core mainly has two structures of cotton and porous ceramic, a heating wire is usually wound and silk-screened on the cotton or the porous ceramic, and the liquid in the oil guide cotton is heated by heat generated after the heating wire is electrified, so that the aim of atomizing the liquid is fulfilled. However, the heating and atomizing element with the cotton structure has the defects of cotton fiber absorption, dry burning carbon deposition of cotton, high heavy metal discharge amount and the like, and the heating and atomizing element with the ceramic structure also has the defects of dust falling, heavy metal discharge and the like.
SUMMERY OF THE UTILITY MODEL
The utility model aims to solve the technical problem of providing a silicon substrate atomizing core with a flow channel structure, which is based on a silicon substrate and generates an atomizing effect by using a flow channel design and has the advantages of high efficiency and safety.
The utility model adopts the following technical scheme for solving the technical problems: the utility model designs a silicon substrate atomizing core with a flow channel structure, which comprises a silicon substrate, a power-on part and at least one flow channel, wherein the power-on part is arranged on one surface of the silicon substrate and works by taking electricity, the flow channel covers the other surface of the silicon substrate and is arranged in a digging way, the surface of the silicon substrate arranged by the power-on part is defined as an execution surface, and the surface of the silicon substrate arranged by each flow channel is a flow channel surface;
the silicon substrate is a non-conductive silicon substrate or a conductive silicon substrate, wherein if the silicon substrate is the non-conductive silicon substrate, the conductive element is a conductive heating element arranged on the execution surface of the silicon substrate;
if the silicon substrate is a conductive silicon substrate, the electrifying part is at least one electrifying electrode, and each electrifying electrode is respectively arranged on the execution surface of the silicon substrate; or the electrifying part is an electrifying heating part and also comprises an insulating layer arranged on the execution surface of the silicon substrate, and the electrifying heating part is arranged on the surface of the insulating layer, which is back to the execution surface of the silicon substrate.
As a preferred technical scheme of the utility model: when the silicon substrate is a non-conductive silicon substrate, covering the non-electrified heating element arrangement area on the silicon substrate execution surface and drawing out at least one flow channel;
when the silicon substrate is a conductive silicon substrate, if the electrifying part is at least one electrifying electrode, covering at least one flow channel in a non-electrifying electrode arrangement area on the execution surface of the silicon substrate; if the electrifying part is an electrifying heating part, at least one flow channel is embedded in the non-electrifying heating part arrangement area on the surface of the silicon substrate execution surface on the covering insulating layer.
As a preferred technical scheme of the utility model: each flow passage is a straight flow passage.
As a preferred technical scheme of the utility model: and the barrier strips between adjacent runners in each runner are respectively provided with notches along the distribution path according to preset spacing distance.
As a preferred technical scheme of the utility model: the straight lines of the flow channels at the adjacent positions in each flow channel are parallel to each other.
As a preferred technical scheme of the utility model: the straight lines of all the flow channels on the silicon substrate execution surface are parallel to each other, and the straight lines of all the flow channels on the silicon substrate flow channel surface are parallel to each other.
As a preferred technical scheme of the utility model: when the electrifying part is an electrifying heating part, the electrifying heating part is in a linear shape, and the straight line where each flow channel is located on the silicon substrate execution surface and the straight line where each flow channel is located on the silicon substrate flow channel surface are intersected with the extension line of the line where the electrifying heating part is located.
As a preferred technical scheme of the utility model: the power-on heating element is characterized by further comprising a protective insulating film covering the surface of the power-on heating element, and the power-taking end on the power-on heating element is exposed.
As a preferred technical scheme of the utility model: the electrified heating member is an electrified heating resistance wire.
The utility model also aims to provide an atomization device of a silicon substrate atomization core with a flow channel structure, which is based on the designed silicon substrate atomization core and can realize the efficient application of the atomization core through a specifically designed power supply structure and an atomization core loading structure.
The utility model adopts the following technical scheme for solving the technical problems: the utility model designs an atomization device of a silicon substrate atomization core with a flow channel structure, which comprises an atomization core application device body, a conductive elastic needle and liquid leakage prevention gaskets, wherein a cavity is arranged in the atomization core application device body, the conductive elastic needle is arranged on the conductive elastic needle on the surface of the atomization core application device body, the conductive elastic needle is communicated with the cavity of the atomization core application device body, the silicon substrate atomization core is detachably arranged in the cavity of the atomization core application device body, the conductive elastic needle is in electrical contact with a power-taking end on a power-on heating element in the atomization core application device body, the number of the liquid leakage prevention gaskets is not less than the number of the end part, facing away from the power-on heating element, of each flow channel in each direction, and each liquid leakage prevention gasket is respectively detachably arranged on the end part, facing away from the power-on heating element, of each flow channel in each direction.
Compared with the prior art, the silicon substrate atomizing core and the atomizing device with the flow channel structure have the following technical effects by adopting the technical scheme:
the utility model designs a silicon substrate atomizing core and an atomizing device of a flow channel structure, a flow channel is manufactured on a silicon substrate by adopting a semiconductor manufacturing process, and an electrifying part is respectively designed to be an electrifying heating part or at least one electrifying electrode based on whether the silicon substrate is conductive, so that the manufacturing of the atomizing core is completed; the whole silicon flow channel liquid guide structure is controllable, regular and compact, the problem of uneven heating of a traditional heating atomizer is solved by using a semiconductor process on a silicon substrate, and the silicon flow channel liquid guide structure has the advantages of good flow channel structure and resistance value consistency of products.
Drawings
FIG. 1 is a schematic view of a silicon substrate atomizing core with an electrically powered heating element forming the flow channel structure of the electrically powered element in accordance with the present invention;
FIG. 2 is a schematic view of a silicon substrate atomizing core with a flow channel structure of a current-carrying member formed by a current-carrying electrode according to the present invention;
FIG. 3 is a schematic view of a flow channel in the design of the present invention;
FIG. 4 is a first schematic view of an apparatus for atomizing a silicon substrate using a flow channel structure according to the present invention;
FIG. 5 is a second schematic view of an apparatus for atomizing a silicon substrate using a flow channel structure according to the present invention.
The device comprises a silicon substrate 1, a flow channel 2, a power-on heating element 3, a power-on electrode 4, an atomizing core application device body 5, a conductive elastic needle 6 and a liquid leakage prevention gasket 7.
Detailed Description
The following description will explain embodiments of the present invention in further detail with reference to the accompanying drawings.
The utility model designs a silicon substrate atomizing core with a flow channel structure, as shown in fig. 1 and fig. 2, which comprises a silicon substrate 1, a power-on part arranged on one surface of the silicon substrate 1 and used for realizing work by getting electricity, and at least one flow channel 2 arranged in a manner of covering the other surface of the silicon substrate 1, wherein the surface of the silicon substrate 1 arranged on the power-on part is defined as an execution surface, and the surface of the silicon substrate 1 arranged on each flow channel 2 is defined as a flow channel surface.
In practical applications, the silicon substrate 1 is a non-conductive silicon substrate or a conductive silicon substrate, wherein if the silicon substrate 1 is a non-conductive silicon substrate, the conductive element is designed as a conductive heating element 3 disposed on the execution surface of the silicon substrate 1, as shown in fig. 1.
If the silicon substrate 1 is a conductive silicon substrate, designing the electrifying part as at least one electrifying electrode 4, and as shown in fig. 2, respectively arranging each electrifying electrode 4 on the execution surface of the silicon substrate 1; or the electrifying part is designed to be the electrifying heating part 3, and further, an insulating layer arranged on the execution surface of the silicon substrate 1 is designed to be added, and the electrifying heating part 3 is arranged on the surface of the insulating layer, which is opposite to the execution surface of the silicon substrate 1.
In the silicon substrate atomizing core with the flow channel structure designed by the technical scheme, in the practical application, the silicon substrate 1 is a non-conductive silicon substrate or a conductive silicon substrate, and when the silicon substrate 1 is the non-conductive silicon substrate, at least one flow channel 2 is arranged in the non-electrified heating element 3 arrangement area on the execution surface of the silicon substrate 1 in a drawing way, as shown in fig. 1; and when the silicon substrate 1 is a conductive silicon substrate, if the conducting element is at least one conducting electrode 4, covering the execution surface of the silicon substrate 1 and drawing out at least one flow channel 2 in the region where the conducting electrodes 4 are not arranged, as shown in fig. 2; if the energized element is an energized heating element 3, at least one flow channel 2 is embedded in the region of the non-energized heating element 3 on the surface of the insulating cover layer facing away from the silicon substrate 1, as shown in fig. 1.
As mentioned above, the layout scheme of the double-sided flow channels 2 is obtained by respectively designing the silicon substrate 1 as a non-conductive silicon substrate or a conductive silicon substrate, that is, the flow channels 2 are uniformly distributed on both sides of the silicon substrate 1, so that more smoke oil layout areas can be obtained.
In terms of designing the flow channels 2, as shown in fig. 1 and 2, it is further designed that each flow channel 2 is a straight line-shaped flow channel, straight lines of the flow channels 2 at adjacent positions in each flow channel 2 are parallel to each other, and barrier strips between the flow channels 2 at adjacent positions in each flow channel 2 are further designed to be provided with gaps along the distribution path thereof at preset intervals, as shown in fig. 3; so lay the in-process at the tobacco tar, the tobacco tar can realize faster, wider diffusion along each runner 2 on silicon substrate 1 surface, effectively improves the diffusion efficiency of tobacco tar on silicon substrate 1 surface.
The layout scheme of the flow channels 2 is further designed, as shown in fig. 1 and fig. 2, the straight lines of the flow channels 2 on the execution surface of the silicon substrate 1 are designed to be parallel to each other, and the straight lines of the flow channels 2 on the flow channel surface of the silicon substrate 1 are designed to be parallel to each other, so that all the flow channels 2 on the execution surface of the silicon substrate 1 are designed to be parallel to each other, and all the flow channels 2 on the flow channel surface of the silicon substrate 1 are designed to be parallel to each other, thereby further improving the diffusion efficiency of the smoke oil on the surface of the silicon substrate 1, and for the surface of the silicon substrate 1, the flow channels 2 which are integrally and parallelly arranged can effectively improve the working efficiency of the etching process of the flow channels 2 on the surface of the silicon substrate 1, and better improve the actual working efficiency of the semiconductor manufacturing process.
In the production of an actual product, when the electrifying part is the electrifying heating part 3, the electrifying heating part 3 is specifically designed to be in a linear shape, such as an electrifying heating resistance wire, and the straight line where each flow channel 2 is positioned on the execution surface of the silicon substrate 1 and the straight line where each flow channel 2 is positioned on the flow channel surface of the silicon substrate 1 are designed to be intersected with the extension line of the line where the electrifying heating resistance wire is positioned, so that after the tobacco tar is diffused to each flow channel 2, the tobacco tar can be atomized under the action of heat generated by electrifying the electrifying heating resistance wire; in addition, in practical production, the surface of the energization heating member 3 is further designed to be covered with a protective insulating film, but the power-taking end on the energization heating member 3 needs to be exposed.
The silicon substrate atomizing core with the flow channel structure designed by the technical scheme is applied to practice, namely, the silicon substrate atomizing core acts on a design device, as shown in fig. 4 and 5, the device comprises an atomizing core application device body 5, a conductive elastic needle 6 and liquid leakage preventing gaskets 7, a cavity is arranged in the atomizing core application device body 5, the conductive elastic needle 6 is arranged on the conductive elastic needle 6 on the surface of the atomizing core application device body 5, the conductive elastic needle 6 is communicated to the cavity of the atomizing core application device body 5, the silicon substrate atomizing core is detachably arranged in the cavity of the atomizing core application device body 5, the conductive elastic needle 6 is in electrical contact with a power-taking end on the electrified heating element 3 in the atomizing core application device body 5, the number of the liquid leakage preventing gaskets 7 is not less than the number of all directions corresponding to the end part of the electrified heating element 3 on each flow channel 2 in each direction, and each liquid leakage gasket 7 is detachably arranged on each flow channel 2 in each direction in each flow channel 2 in each direction in a mode in order to face away from the electrified heating element 3 And an end portion.
According to the silicon substrate atomizing core and the atomizing device with the flow channel structure designed by the technical scheme, the flow channel 2 is manufactured on the silicon substrate 1 by adopting a semiconductor manufacturing process, and the electrifying part is respectively designed to be the electrifying heating part 3 or at least one electrifying electrode 4 based on whether the silicon substrate 1 is conductive, so that the atomizing core is manufactured, when the atomizing core works, tobacco tar enters the flow channel 2 through two ends of the flow channel 2, the tobacco tar in the flow channel 2 is heated and atomized by the electrifying part, the tobacco tar is only in physical contact with silicon in the whole atomizing process, the phenomenon that harmful gas is generated by dry burning of the atomizing core with a cotton structure is thoroughly avoided, and meanwhile, the problem that the heavy metal emission of the existing atomizing core is high is also avoided by the heating structure based on the silicon core; the whole silicon flow channel liquid guide structure is controllable, regular and compact, the problem of uneven heating of a traditional heating atomizer is solved by using a semiconductor process on a silicon substrate 1, and the silicon flow channel liquid guide structure has the advantages of good flow channel structure and resistance value consistency of products.
The embodiments of the present invention have been described in detail with reference to the drawings, but the present invention is not limited to the above embodiments, and various changes can be made within the knowledge of those skilled in the art without departing from the gist of the present invention.
Claims (10)
1. A silicon substrate atomizing core of a flow channel structure is characterized in that: the device comprises a silicon substrate (1), a power-on part which is arranged on one surface of the silicon substrate (1) and works by taking electricity, and at least one flow channel (2) which covers the other surface of the silicon substrate (1) and is arranged in a digging way, wherein the surface of the silicon substrate (1) arranged on the power-on part is defined as an execution surface, and the surface of the silicon substrate (1) arranged on each flow channel (2) is a flow channel surface;
the silicon substrate (1) is a non-conductive silicon substrate or a conductive silicon substrate, wherein if the silicon substrate (1) is the non-conductive silicon substrate, the conductive part is a conductive heating part (3) arranged on the execution surface of the silicon substrate (1);
if the silicon substrate (1) is a conductive silicon substrate, the electrifying part is at least one electrifying electrode (4), and the electrifying electrodes (4) are respectively arranged on the execution surface of the silicon substrate (1); or the electrifying part is an electrifying heating part (3) and further comprises an insulating layer arranged on the execution surface of the silicon substrate (1), and the electrifying heating part (3) is arranged on the surface, back to the execution surface of the silicon substrate (1), of the insulating layer.
2. The silicon substrate atomizing core of a flow channel structure according to claim 1, wherein: when the silicon substrate (1) is a non-conductive silicon substrate, at least one flow channel (2) is arranged in the non-electrified heating element (3) arrangement area on the execution surface of the silicon substrate (1) in a drawing way;
when the silicon substrate (1) is a conductive silicon substrate, if the electrifying part is at least one electrifying electrode (4), covering the execution surface of the silicon substrate (1) and drawing and distributing at least one flow channel (2) in the region where the electrifying electrodes (4) are not arranged; if the electrifying part is an electrifying heating part (3), at least one flow channel (2) is embedded in the non-electrifying heating part (3) arrangement area on the surface of the execution surface of the silicon substrate (1) on the covering insulating layer.
3. The silicon substrate atomizing core of a flow channel structure according to claim 1 or 2, wherein: each flow channel (2) is a linear flow channel.
4. The silicon substrate atomizing core of a flow channel structure according to claim 3, wherein: and the barrier strips between the adjacent runners (2) in each runner (2) are respectively provided with notches at preset interval distances along the distribution path.
5. The silicon substrate atomizing core of a flow channel structure according to claim 4, wherein: the straight lines of the flow channels (2) at the adjacent positions in each flow channel (2) are parallel to each other.
6. The silicon substrate atomizing core of a flow channel structure according to claim 5, wherein: the straight lines of the runners (2) on the execution surface of the silicon substrate (1) are parallel to each other, and the straight lines of the runners (2) on the runner surface of the silicon substrate (1) are parallel to each other.
7. The silicon substrate atomizing core of a flow channel structure according to claim 6, wherein: when the electrifying part is the electrifying heating part (3), the electrifying heating part (3) is in a linear shape, and the straight line where each flow channel (2) is located on the execution surface of the silicon substrate (1) is intersected with the extension line of the line where the electrifying heating part (3) is located on the straight line where each flow channel (2) is located on the flow channel surface of the silicon substrate (1).
8. The silicon substrate atomizing core of a flow channel structure according to claim 7, wherein: the device also comprises a protective insulating film which is covered on the surface of the electrifying heating element (3), and the electricity taking end on the electrifying heating element (3) is exposed.
9. The silicon substrate atomizing core of a flow channel structure according to claim 8, wherein: the electrified heating element (3) is an electrified heating resistance wire.
10. An atomizing device using the silicon substrate atomizing core of the flow channel structure as set forth in any one of claims 1 to 9, characterized in that: comprises an atomization core application device body (5), a conductive elastic needle (6) and each leakage-proof gasket (7), wherein the atomization core application device body (5) is internally provided with a cavity, the conductive elastic needle (6) is arranged on the conductive elastic needle (6) on the surface of the atomization core application device body (5), and the conductive elastic needle (6) is communicated with the cavity of the atomizing core application device body (5), the silicon substrate atomizing core is detachably arranged in the cavity of the atomizing core application device body (5), and the conductive elastic needle (6) is in electrical contact with the electricity taking end on the electrified heating element (3) in the atomizing core application device body (5), the number of the liquid leakage preventing gaskets (7) is not less than the number of the end parts, facing away from the electrified heating element (3), of each flow channel (2) in each direction, and each liquid leakage preventing gasket (7) is detachably arranged on the end part, facing away from the electrified heating element (3), of each flow channel (2) in each direction respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121938410.2U CN216315589U (en) | 2021-08-18 | 2021-08-18 | Silicon substrate atomizing core and atomizing device of runner structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121938410.2U CN216315589U (en) | 2021-08-18 | 2021-08-18 | Silicon substrate atomizing core and atomizing device of runner structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN216315589U true CN216315589U (en) | 2022-04-19 |
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ID=81168646
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202121938410.2U Expired - Fee Related CN216315589U (en) | 2021-08-18 | 2021-08-18 | Silicon substrate atomizing core and atomizing device of runner structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN216315589U (en) |
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2021
- 2021-08-18 CN CN202121938410.2U patent/CN216315589U/en not_active Expired - Fee Related
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| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20220419 |