CN216290847U - Internal matching circuit and power amplifier - Google Patents
Internal matching circuit and power amplifier Download PDFInfo
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- CN216290847U CN216290847U CN202123046164.2U CN202123046164U CN216290847U CN 216290847 U CN216290847 U CN 216290847U CN 202123046164 U CN202123046164 U CN 202123046164U CN 216290847 U CN216290847 U CN 216290847U
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Abstract
The embodiment of the utility model discloses an internal matching circuit and a power amplifier, wherein the internal matching circuit is used for being connected with a GaN power tube and comprises an internal matching capacitor, a first inductor, a second inductor and a resistor, and the internal matching capacitor comprises a first matching capacitor; the first inductor is connected with the second inductor through a first matching capacitor, the first inductor, the second inductor and the first matching capacitor form a resonant circuit, the second inductor is used for being connected with the GaN power tube, and the resonant circuit is used for carrying out ultra-wideband matching on the GaN power tube; the resistor and the first matching capacitor are connected in parallel to form a stabilizing circuit, the stabilizing circuit is used for preventing the GaN power tube from self-exciting, and the grounding end of the internal matching capacitor is grounded. The internal matching circuit improves the stability of the GaN power tube and realizes ultra wide band matching of the GaN power tube. The resonant circuit and the stabilizing circuit share the internal matching capacitor, so that the utilization rate of the capacitor device is improved, and the miniaturization of the internal matching circuit is realized.
Description
Technical Field
The utility model relates to the field of electronic devices, in particular to an internal matching circuit and a power amplifier.
Background
In wireless communication, a GaN (Gallium nitride) power tube is used to amplify an input signal to a predetermined power and output the amplified signal to a load device to provide an output power capable of driving the load device. GaN HEMT (Gallium nitride High Electron Mobility Transistor) is a new GaN power tube with the advantages of High working frequency, High power density and High breakdown voltage.
The performance of the GaN HEMT is influenced by the internal matching circuit, and the internal matching circuit can effectively reduce the debugging of the power amplifier of the GaN HEMT. However, the matching networks formed by the existing internal matching circuits are all based on narrow-band network design, and repeated internal matching circuit design needs to be performed according to the frequency band requirement of the power amplifier. Meanwhile, the internal matching circuit lacks the circuit stability design, and the self-excitation phenomenon easily occurs in the power amplifier.
SUMMERY OF THE UTILITY MODEL
In view of the above, an object of the present invention is to overcome the deficiencies in the prior art, and provide an internal matching circuit and a power amplifier, so as to solve the problem that a GaN power transistor cannot provide ultra-wideband power output.
The utility model provides the following technical scheme:
in a first aspect, an internal matching circuit is provided and is used for being connected with a GaN power tube, the internal matching circuit includes an internal matching capacitor, a first inductor, a second inductor and a resistor, and the internal matching capacitor includes a first matching capacitor;
the first inductor is connected with the second inductor through the first matching capacitor, the first inductor, the second inductor and the first matching capacitor form a resonant circuit, the second inductor is used for being connected with the GaN power tube, and the resonant circuit is used for carrying out ultra wide band matching on the GaN power tube;
the resistor and the first matching capacitor are connected in parallel to form a stabilizing circuit, the stabilizing circuit is used for preventing the GaN power tube from self-exciting, and the grounding end of the internal matching capacitor is grounded.
With reference to the first aspect, in a first possible implementation manner, the first matching capacitor includes a first capacitor and a second capacitor;
the first inductor is connected with the second inductor through the first capacitor and the second capacitor in sequence;
the first inductor is connected with the first capacitor, and the first inductor and the first capacitor form a first resonator;
the second inductor is connected with the second capacitor, and the second inductor and the second capacitor form a second resonator;
the first resonator and the second resonator are used for generating a resonant frequency.
With reference to the first possible implementation manner of the first aspect, in a second possible implementation manner, one end of the resistor is connected to a first node between the first capacitor and the first inductor, the other end of the resistor is connected to a second node between the second capacitor and the second inductor, and the first capacitor, the second capacitor, and the resistor form a stable circuit.
With reference to the first possible implementation manner of the first aspect, in a third possible implementation manner, the internal matching capacitor includes a second matching capacitor, one end of the second matching capacitor is grounded, and the other end of the second matching capacitor is connected to a third node between the first capacitor and the second capacitor.
With reference to the first aspect, in a fourth possible implementation manner, the internal matching capacitor includes a first electrode layer, a second electrode layer, and a metal layer, where the first electrode layer and the second electrode layer are disposed on one side of the metal layer, the first electrode layer, the second electrode layer, and the metal layer form a first matching capacitor, the first electrode layer and the metal layer form a first capacitor, and the second electrode layer and the metal layer form a second capacitor;
the resistor is arranged between the first electrode layer and the second electrode layer, the first electrode layer is connected with the first inductor, the second electrode layer is connected with the second inductor, and the metal layer is grounded.
With reference to the fourth possible implementation manner of the first aspect, in a fifth possible implementation manner, the internal matching capacitor further includes a first filling medium, the first filling medium is disposed between the first electrode layer and the metal layer, and the first filling medium is further disposed between the second electrode layer and the metal layer.
With reference to the fourth possible implementation manner of the first aspect, in a sixth possible manner, the internal matching capacitor further includes a ground layer, and the ground layer and the metal layer form a second matching capacitor;
the grounding layer is arranged on the other side of the metal layer, and the metal layer is grounded through the grounding layer.
With reference to the sixth possible implementation manner of the first aspect, in a seventh possible manner, the internal matching capacitor further includes a second filling medium, and the second filling medium is disposed between the ground layer and the metal layer.
With reference to the sixth possible implementation manner of the first aspect, in an eighth possible implementation manner, the internal matching capacitor further includes a housing, and the first electrode layer, the second electrode layer, the metal layer, and the ground layer are all disposed in the housing.
In a second aspect, a power amplifier is provided, which includes an input terminal, an output terminal, a GaN power transistor, and the internal matching circuit of the first aspect, wherein the input terminal is connected to the output terminal sequentially through the internal matching circuit and the GaN power transistor.
The embodiment of the utility model has the following advantages:
the application provides an interior matching circuit, including interior matching capacitor, first inductance, second inductance and resistance, interior matching capacitor includes first matching capacitor. The first inductor is connected with the second inductor through the first matching capacitor, the first inductor, the second inductor and the first matching capacitor form a resonant circuit, and the resistor and the first matching capacitor are connected in parallel to form a stable circuit. The internal matching circuit improves the stability of the GaN power tube and realizes ultra wide band matching of the GaN power tube. Meanwhile, the resonant circuit and the stabilizing circuit share the first matching capacitor, so that the utilization rate of the capacitor device is improved, and the miniaturization of the internal matching circuit is realized.
Drawings
In order to more clearly illustrate the technical solution of the present invention, the drawings required to be used in the embodiments will be briefly described below, and it should be understood that the following drawings only illustrate some embodiments of the present invention, and therefore should not be considered as limiting the scope of the present invention. Like components are numbered similarly in the various figures.
Fig. 1 is a schematic diagram illustrating a structure of an internal matching circuit provided in an embodiment of the present application;
fig. 2 is a schematic diagram illustrating another structure of an internal matching circuit provided in an embodiment of the present application;
fig. 3 shows a schematic structural diagram of a power amplifier provided in an embodiment of the present application.
Description of the main element symbols:
100-inner matching circuit, 200-GaN power tube, 300-input end, 400-output end; 110-internal matching capacitance, 120-first matching capacitance; 111-first electrode layer, 112-second electrode layer, 113-metal layer, 114-first filling medium, 115-ground layer, 116-second filling medium, 117-shell; the circuit comprises an R-resistor, an L1-first inductor, an L2-second inductor, a C1-first capacitor, a C2-second capacitor and a C3-second matching capacitor; x-first node, y-second node, z-third node.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the utility model, as claimed, but is merely representative of selected embodiments of the utility model. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without making any creative effort, shall fall within the protection scope of the present invention.
Hereinafter, the terms "including", "having", and their derivatives, which may be used in various embodiments of the present invention, are only intended to indicate specific features, numbers, steps, operations, elements, components, or combinations of the foregoing, and should not be construed as first excluding the existence of, or adding to, one or more other features, numbers, steps, operations, elements, components, or combinations of the foregoing.
Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which various embodiments of the present invention belong. The terms (such as those defined in commonly used dictionaries) should be interpreted as having a meaning that is consistent with their contextual meaning in the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein in various embodiments of the present invention.
Referring to fig. 1, fig. 1 shows a schematic structural diagram of an internal matching circuit 100 according to an embodiment of the present application, where the internal matching circuit 100 is exemplarily used for being connected to a GaN power transistor 200, the internal matching circuit 100 includes an internal matching capacitor 110, a first inductor L1, a second inductor L2, and a resistor R, and the internal matching capacitor 110 includes a first matching capacitor 120;
the first inductor L1 is connected to the second inductor L2 through the first matching capacitor 120, the first inductor L1, the second inductor L2 and the first matching capacitor 120 form a resonant circuit, the second inductor L2 is used for being connected to the GaN power tube 200, and the resonant circuit is used for ultra-wideband matching of the GaN power tube 200;
the resistor R and the first matching capacitor 120 are connected in parallel to form a stabilizing circuit, and the stabilizing circuit is used for avoiding the GaN power tube 200 from self-excitation. Self-excited oscillation is also called self-oscillation, and refers to the continuous oscillation generated by the amplifier in the absence of an external excitation signal. The Resistor R is connected in parallel with the first matching capacitor 120 to form an RC (Resistor capacitor) stabilizing circuit, which attenuates the signal in the internal matching circuit 100, i.e. filters the internal matching circuit 100, so as to avoid self-excitation of the GaN power tube 200.
It should be understood that the resistor R does not have the energy storage capability, and the first inductor L1, the second inductor L2 and the first matching capacitor 120 form an LC (inductor capacitor) resonant circuit, which stores the energy oscillated when the internal matching circuit 100 resonates. The LC resonant circuit separates the signal of the input end 300, and keeps the signal of the specific frequency to be input to the GaN power tube 200, thereby realizing the ultra-wideband matching of the GaN power tube 200. The GaN power tube 200 outputs the amplified signal through the output terminal 400.
The first matching capacitor 120 comprises a first capacitor C1 and a second capacitor C2;
the first inductor L1 is connected with the second inductor L2 through the first capacitor C1 and the second capacitor C2 in sequence;
the first inductor L1 is connected to the first capacitor C1, and the first inductor L1 and the first capacitor C1 form a first resonator;
the second inductor L2 is connected to the second capacitor C2, and the second inductor L2 and the second capacitor C2 form a second resonator;
the first resonator and the second resonator are used for generating a resonant frequency.
Resonance is a phenomenon in which the amplitude sharply increases when the frequency of the external force is the same as or very close to the natural oscillation frequency of the system. In this embodiment, the first resonator and the second resonator connected in series form a series resonant network. The inductance values of the first inductor L1 and the second inductor L2 and the capacitance values of the first capacitor C1 and the second capacitor C2 are adjusted to form series resonance, so that the output impedance of the GaN power tube 200 is effectively improved, and the ultra-wideband matching of the GaN power tube 200 is realized.
It is to be understood that an inductor is a device that includes gold wire leads and that the windings are formed from the gold wire leads to impede the change of current through the inductor. The inductance values of the first inductor L1 and the second inductor L2 are determined by the length, the arc height and the number of gold wire leads.
One end of the resistor R is connected to a first node x between the first capacitor C1 and the first inductor L1, the other end of the resistor R is connected to a second node y between the second capacitor C2 and the second inductor L2, and the first capacitor C1, the second capacitor C2 and the resistor R form a stable circuit.
The first capacitor C1 and the second capacitor C2 are decoupled or low-frequency filtered, so as to prevent the GaN power tube 200 from self-excitation. The power gain is adjusted by changing the resistance value of the resistor R in the RC stable circuit, and the stability of the internal matching circuit 100 is enhanced.
The inner matching capacitor 110 includes a second matching capacitor C3, one end of the second matching capacitor C3 is grounded, and the other end of the second matching capacitor C3 is connected to a third node z between the first capacitor C1 and the second capacitor C2.
The second matching capacitor C3 is connected to the first inductor L1 through the first capacitor C1 and to the second inductor L2 through one of the second capacitors C2, and the second matching capacitor C3, the first inductor L1, and the second capacitor C2 constitute a T-type fundamental wave matching circuit. The fundamental wave matching circuit has a filtering function and can filter out frequencies except the working frequency band of the GaN power tube 200 in signals. Specifically, if the operating frequency band of the GaN power tube 200 is 2.5-2.7GHz, the fundamental wave matching circuit filters out frequencies other than 2.5G-2.7GHz in the signal, and ensures that the signal input to the GaN power tube 200 is at the fundamental wave frequency of 2.5-2.7 GHz.
Referring to fig. 2, fig. 2 is a schematic diagram illustrating another structure of an internal matching circuit according to an embodiment of the present disclosure. The internal matching capacitor 110 includes a first electrode layer 111, a second electrode layer 112 and a metal layer 113, the first electrode layer 111 and the second electrode layer 112 are disposed on one side of the metal layer 113, the first electrode layer 111 and the metal layer 113 form a first capacitor C1, and the second electrode layer 112 and the metal layer 113 form a second capacitor C2;
the resistor R is disposed between the first electrode layer 111 and the second electrode layer 112, the first electrode layer is connected to the first inductor L1 111, the second electrode layer 112 is connected to the second inductor L2, and the metal layer 113 is grounded.
The resistor R is arranged between the first electrode layer 111 and the second electrode layer 112, and the first electrode layer 111 and the second electrode layer 112 are arranged on one side of the metal layer 113, so that the size of the internal matching capacitor 110 is reduced on the basis of realizing corresponding circuit functions, and the miniaturization of the internal matching circuit 100 is realized.
It should be understood that the capacitance of the first capacitor C1 is determined by the size of the first electrode layer 111, and the capacitance of the second capacitor C2 is determined by the size of the second electrode layer 112. The ultra-wideband matching of the GaN power tube 200 is realized by adjusting the capacitance values of the first capacitor C1 and the second capacitor C2, and adjusting the inductance values of the first inductor L1 and the second inductor L2.
The internal matching capacitor 110 further includes a first filling medium 114, the first filling medium 114 is disposed between the first electrode layer 111 and the metal layer 113, and the first filling medium 114 is further disposed between the second electrode layer 112 and the metal layer 113.
The capacitance values of the first capacitor C1 and the second capacitor C2 are further determined by the dielectric constant and the thickness of the first filling medium 114. In this embodiment, the first filling medium 114 is made of a ceramic material with a high dielectric constant, such as silicon oxide, so as to reduce the volume of the inner matching capacitor 110 and to achieve miniaturization of the inner matching circuit 100.
The internal matching capacitor 110 further comprises a ground layer 115, and the ground layer 115 and the metal layer 113 form a second matching capacitor C3;
the ground layer 115 is disposed on the other side of the metal layer 113, and the metal layer 113 is grounded through the ground layer 115.
In this embodiment, the first electrode layer 111 and the metal layer 113 form a first capacitor C1, the second electrode layer 112 and the metal layer 113 form a second capacitor C2, and the ground layer 115 and the metal layer 113 form a second matching capacitor C3. The first capacitor C1, the second capacitor C2 and the second matching capacitor C3 share the same metal layer, so that the size of the internal matching capacitor 110 is reduced, and the miniaturization of the internal matching circuit 100 is realized.
The internal matching capacitor 110 further includes a second filling medium 116, and the second filling medium 116 is disposed between the ground layer 115 and the metal layer 113.
The capacitance of the second matching capacitor C3 is determined by the dielectric constant and the thickness of the second filling-in medium 116. In this embodiment, the second filling-in medium 116 is made of a ceramic material with a high dielectric constant, such as silicon oxide, to reduce the volume of the inner matching capacitor 110, thereby realizing the miniaturization of the inner matching circuit 100.
The internal matching capacitor 110 further includes a housing 117, and the first electrode layer 111, the second electrode layer 112, the metal layer 113 and the ground layer 115 are disposed in the housing 117.
The first electrode layer 111, the second electrode layer 112, the metal layer 113 and the ground layer 115 are all packaged in the housing 117 to form a complete internal matching capacitor 110. Meanwhile, the first electrode layer 111, the second electrode layer 112, the metal layer 113 and the ground layer 115 are prevented from contacting with the conductive medium outside, and the internal matching capacitor 110 is prevented from being damaged.
The embodiment of the present application further provides a power amplifier, which includes an internal matching circuit 100, a GaN power tube 200, an input terminal 300, and an output terminal 400 in this implementation, where the input terminal 300 is connected to the output terminal 400 sequentially through the internal matching circuit 100 and the GaN power tube 200.
Referring to fig. 3, fig. 3 is a schematic diagram illustrating a structure of a power amplifier according to an embodiment of the present disclosure. When an input signal is input to the internal matching circuit 100 through the input terminal 300, the internal matching circuit 100 performs ultra-wideband matching on the GaN power tube 200, so as to improve the output impedance of the GaN power tube 200. The output end 400 outputs the amplified signal of the GaN power tube 200, which ensures the high power output of the power amplifier. According to the power amplifier provided by the application, the internal matching circuit 100 improves the stability of the GaN power tube 200 and realizes ultra-wideband matching of the GaN power tube 200. Meanwhile, the resonant circuit and the stabilizing circuit share the first matching capacitor 120, so that the utilization rate of a capacitor device is improved, and the miniaturization of the power amplifier is realized.
In the embodiments provided in the present application, it should be understood that the disclosed apparatus and method can be implemented in other ways. The apparatus embodiments described above are merely illustrative and, for example, the flowchart and block diagrams in the figures illustrate the architecture, functionality, and operation of possible implementations of apparatus, methods and computer program products according to various embodiments of the present invention. In this regard, each block in the flowchart or block diagrams may represent a module, segment, or portion of code, which comprises one or more executable instructions for implementing the specified logical function(s). It should also be noted that, in alternative implementations, the functions noted in the block may occur out of the order noted in the figures. For example, two blocks shown in succession may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality involved. It will also be noted that each block of the block diagrams and/or flowchart illustration, and combinations of blocks in the block diagrams and/or flowchart illustration, can be implemented by special purpose hardware-based systems which perform the specified functions or acts, or combinations of special purpose hardware and computer instructions.
In addition, each functional module or unit in each embodiment of the present invention may be integrated together to form an independent part, or each module may exist separately, or two or more modules may be integrated to form an independent part.
The functions, if implemented in the form of software functional modules and sold or used as a stand-alone product, may be stored in a computer readable storage medium. Based on such understanding, the technical solution of the present invention or a part of the technical solution that contributes to the prior art in essence can be embodied in the form of a software product, which is stored in a storage medium and includes instructions for causing a computer device (which may be a smart phone, a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the method according to the embodiments of the present invention. And the aforementioned storage medium includes: a U-disk, a removable hard disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), a magnetic disk or an optical disk, and other various media capable of storing program codes.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention.
Claims (10)
1. The internal matching circuit is characterized by being used for being connected with a GaN power tube, and comprising an internal matching capacitor, a first inductor, a second inductor and a resistor, wherein the internal matching capacitor comprises a first matching capacitor;
the first inductor is connected with the second inductor through the first matching capacitor, the first inductor, the second inductor and the first matching capacitor form a resonant circuit, the second inductor is used for being connected with the GaN power tube, and the resonant circuit is used for carrying out ultra wide band matching on the GaN power tube;
the resistor and the first matching capacitor are connected in parallel to form a stabilizing circuit, the stabilizing circuit is used for preventing the GaN power tube from self-exciting, and the grounding end of the internal matching capacitor is grounded.
2. The internal matching circuit of claim 1, wherein the first matching capacitor comprises a first capacitor and a second capacitor;
the first inductor is connected with the second inductor through the first capacitor and the second capacitor in sequence;
the first inductor is connected with the first capacitor, and the first inductor and the first capacitor form a first resonator;
the second inductor is connected with the second capacitor, and the second inductor and the second capacitor form a second resonator;
the first resonator and the second resonator are used for generating a resonant frequency.
3. The internal matching circuit of claim 2, wherein one end of the resistor is connected to a first node between the first capacitor and a first inductor, and the other end of the resistor is connected to a second node between the second capacitor and a second inductor, and the first capacitor, the second capacitor and the resistor form a stable circuit.
4. The internal matching circuit of claim 2, wherein the internal matching capacitor comprises a second matching capacitor, one end of the second matching capacitor is grounded, and the other end of the second matching capacitor is connected to a third node between the first capacitor and the second capacitor.
5. The internal matching circuit according to claim 1, wherein the internal matching capacitor comprises a first electrode layer, a second electrode layer and a metal layer, the first electrode layer and the second electrode layer are disposed on one side of the metal layer, the first electrode layer, the second electrode layer and the metal layer constitute a first matching capacitor, the first electrode layer and the metal layer constitute a first capacitor, and the second electrode layer and the metal layer constitute a second capacitor;
the resistor is arranged between the first electrode layer and the second electrode layer, the first electrode layer is connected with the first inductor, the second electrode layer is connected with the second inductor, and the metal layer is grounded.
6. The internal matching circuit of claim 5, wherein the internal matching capacitor further comprises a first fill dielectric, the first fill dielectric being disposed between the first electrode layer and the metal layer, and the first fill dielectric being further disposed between the second electrode layer and the metal layer.
7. The internal matching circuit of claim 5, wherein the internal matching capacitor further comprises a ground plane, the ground plane and the metal layer forming a second matching capacitor;
the grounding layer is arranged on the other side of the metal layer, and the metal layer is grounded through the grounding layer.
8. The internal matching circuit of claim 7, wherein the internal matching capacitor further comprises a second fill dielectric disposed between the ground layer and the metal layer.
9. The internal matching circuit of claim 7, wherein said internal matching capacitor further comprises a housing, and wherein said first electrode layer, said second electrode layer, said metal layer, and said ground layer are disposed within said housing.
10. A power amplifier comprising an input terminal, an output terminal, a GaN power transistor, and the internal matching circuit of any one of claims 1 to 9, wherein the input terminal is connected to the output terminal sequentially through the internal matching circuit and the GaN power transistor.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123046164.2U CN216290847U (en) | 2021-12-06 | 2021-12-06 | Internal matching circuit and power amplifier |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202123046164.2U CN216290847U (en) | 2021-12-06 | 2021-12-06 | Internal matching circuit and power amplifier |
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| CN216290847U true CN216290847U (en) | 2022-04-12 |
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| CN202123046164.2U Active CN216290847U (en) | 2021-12-06 | 2021-12-06 | Internal matching circuit and power amplifier |
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