CN216133672U - Heating structure - Google Patents
Heating structure Download PDFInfo
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- CN216133672U CN216133672U CN202121622005.XU CN202121622005U CN216133672U CN 216133672 U CN216133672 U CN 216133672U CN 202121622005 U CN202121622005 U CN 202121622005U CN 216133672 U CN216133672 U CN 216133672U
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Abstract
The embodiment of the utility model provides a heating structure. The heating structure comprises a base material, a second conducting layer and a flow guide strip, wherein the base material is used as a carrier for forming the conducting layer through coating; a second conductive layer covering the substrate; wherein the second conductive layer is formed by cutting the conductive layer on the surface of the base material; the diversion strips are arranged on two sides of the second conducting layer. The heating structure cuts the conducting layer so as to reduce the conducting area of the conducting layer and effectively control the output power, and simultaneously cuts the conducting layer into a plurality of independent conducting units in a cutting mode, thereby effectively solving the problem that the whole conducting layer is damaged due to extension of part of the conducting layer.
Description
Technical Field
The utility model relates to the technical field of heating structures, in particular to a heating structure.
Background
At present, no effective heating measures are available in the south, and the south is cold and moist in winter; therefore, magnetron technology is mostly adopted to prepare a conductive layer with a thickness of 40nm-60nm on an insulating substrate, and the conductive layer is electrified and heated through a conductive bar for heating. However, since the conductive layer completely covers the substrate, high temperature is generated due to excessive power during heating, which is likely to cause hazards such as fire. However, the thickness of the conductive layer is reduced to 20nm-30nm to control the power based on the prior art, the required manufacturing process precision is too high, the precision requirement cannot be met in the manufacturing of the heating building material, and meanwhile, because the conductive layer formed by the magnetron sputtering technology has the property of damage extension, when a point of damage occurs on the conductive layer, the conductive layer gradually spreads to the whole conductive layer, so that the damage is caused.
SUMMERY OF THE UTILITY MODEL
Embodiments of the present invention provide a heating structure to solve one or more technical problems in the prior art. This heating structure cutting conducting layer to reduce the conducting area of conducting layer, effective control output cuts the conducting layer into a plurality of independent electrically conductive units through the cutting mode simultaneously, effectively solves the conducting layer and has partial damage can extend, and then damages the problem of whole conducting layer.
An embodiment of the present invention provides a heating structure, including:
the substrate is used as a carrier for forming a conductive layer by coating;
a second conductive layer overlying the substrate; wherein the second conductive layer is formed by cutting the conductive layer on the surface of the base material; and
and the guide strips are arranged on two sides of the second conducting layer.
In a preferred embodiment, the second conductive layer includes a plurality of conductive units in a current flowing direction, and the conductive units are spaced apart from each other, so that the second conductive layer is in a grid shape.
In a preferred embodiment, the second conductive layer includes a plurality of cutting lines along the current flowing direction, and the conductive layer between adjacent cutting lines is a conductive unit, wherein a plurality of the conductive units are isolated, so that the second conductive layer includes a plurality of open-circuit conductive units.
In a preferred embodiment, the width of the cutting line is not less than 10 um.
In a preferred embodiment, the substrate is equally divided into two second substrates in an E shape, so that the second conductive layer is in an E shape;
the vertical side of the E-shaped second conducting layer is used as a first side, the open end of the E-shaped second conducting layer is used as a second side, and the first side and the second side are used for placing the flow guide strips.
In a preferred embodiment, the second conductive layer includes one or more of a metal oxide semiconductor, graphene, and a metal alloy.
One of the above technical solutions has the following advantages or beneficial effects: cutting conducting layer in this heating structure preparation to reduce the conducting area of conducting layer, effective control output cuts the conducting layer into a plurality of independent electrically conductive units through the cutting mode simultaneously, effectively solves the problem that the conducting layer part damages to extend and then damages whole conducting layer.
The foregoing summary is provided for the purpose of description only and is not intended to be limiting in any way. In addition to the illustrative aspects, embodiments, and features described above, further aspects, embodiments, and features of the present invention will be readily apparent by reference to the drawings and following detailed description.
Drawings
In the drawings, like reference numerals refer to the same or similar parts or elements throughout the several views unless otherwise specified. The figures are not necessarily to scale. It is appreciated that these drawings depict only some embodiments in accordance with the disclosure and are therefore not to be considered limiting of its scope.
Fig. 1 shows a schematic view of a structure of a heating structure.
Fig. 2 is a schematic view showing an overall structure of a heating structure according to an embodiment of the present invention.
Fig. 3 shows another overall structural view of the heating structure according to the embodiment of the present invention.
Fig. 4 shows a schematic structural view of a heating structure according to an embodiment of the present invention.
Fig. 5 shows a flowchart of steps of a method of manufacturing a heating structure according to an embodiment of the present invention.
Fig. 6 is a flowchart showing a specific step of step S02 in the method for manufacturing the heating structure according to the embodiment of the present invention.
Fig. 7 is a flowchart showing another detailed step of step S02 in the method for manufacturing the heating structure according to the embodiment of the present invention.
Fig. 8 is a flowchart showing still another specific step of step S02 in the method for manufacturing a heating structure according to the embodiment of the present invention.
Reference numerals:
100. a first conductive layer; 110. A substrate; 120. A second conductive layer;
130. a flow guide strip; 140. A second substrate.
Detailed Description
In the following, only certain exemplary embodiments are briefly described. As those skilled in the art will recognize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention. Accordingly, the drawings and description are to be regarded as illustrative in nature, and not as restrictive.
In a first aspect, an embodiment of the present invention provides a heating structure, which is shown in fig. 1 and includes a substrate 110, a second conductive layer 120, and a conductive sheet 130.
The substrate 110 serves as a carrier for forming a conductive layer for plating.
The second conductive layer 120 covers the substrate 110; wherein the second conductive layer 120 is formed by cutting the conductive layer on the surface of the substrate 110.
The guide bars are disposed on both sides of the second conductive layer 120.
In the present embodiment, the conductive layer 120 is formed in a grid shape, a column shape, or other shapes by removing the metal oxide semiconductor part covering the substrate 110, so as to reduce the area of the conductive layer, to realize power control without increasing the manufacturing accuracy, to limit the maximum power of the heating structure without causing fire hazard, and to cut the conductive layer into a plurality of independent conductive units in cutting, to prevent damage to the conductive layer and damage to the entire conductive layer.
In one embodiment, referring to fig. 1, the second conductive layer 120 includes a plurality of conductive units 121 along the current flowing direction, and the conductive units 121 are spaced apart from each other, so that the second conductive layer 120 is in a grid shape. The conductive units 121 are arranged at intervals, that is, the conductive layers covering the substrate 110 are reduced, so that power control is realized without improving the manufacturing precision, and the maximum power of the heating structure is limited, and no fire hazard is caused.
In one embodiment, referring to fig. 2, the second conductive layer 120 includes a plurality of cutting lines along the current direction, and the conductive layer between adjacent cutting lines is a conductive unit 121, wherein the plurality of conductive units 121 are isolated, so that the second conductive layer 120 includes a plurality of open-circuit conductive units 121. Therefore, the conductive units 121 which are electrified to work are effectively reduced, so that the power of the whole second conductive layer 120 is controlled, the power control is realized under the condition that the manufacturing precision is not improved, the maximum power of a heating structure is limited, and the fire hazard can not be generated.
Further, the width of the cutting line is not less than 10 um. Thus, the adjacent conductive layers are not bonded after cutting.
In one embodiment, referring to fig. 3, the substrate 110 is equally divided into two second substrates 140 in an "E" shape such that the second conductive layer 120 is "E" shaped;
the vertical side of the "E" -shaped second conductive layer 120 is used as the first side, the open end of the "E" -shaped second conductive layer 120 is used as the second side, and the first side and the second side are used for placing the tie bars.
In the embodiment, the substrate 110 is equally divided and cut, so that the first conductive layer 100 is respectively attached to the two second substrates 140, meanwhile, the substrate 110 is kept to have an "E" -shaped structure in the dividing process, the "E" -shaped structure is used for realizing the conductive function, the cylindrical conductive layers in each "E" -shaped structure are arranged at intervals, even if damage occurs, the influence on each other cannot be caused, the equally divided and cut substrate 110 not only effectively controls the area of the conductive layers on the second substrates 140, and realizes power control, but also simultaneously, one substrate 110 is cut into the two second substrates 140, and the cost is greatly saved.
In a specific embodiment, the second conductive layer 120 includes one or more of a metal oxide semiconductor, graphene, and a metal alloy. The second conductive layer 120 can achieve the heating effect in this embodiment by using an electrothermal conversion material, and thus, can be used as a material of the second conductive layer 120 in various conductors and semiconductors.
Fig. 5 shows a flowchart of steps of a method of manufacturing a heating structure according to an embodiment of the present invention.
Referring to fig. 5, an embodiment of the present invention provides a method for manufacturing a thermal structure, including:
s110: the substrate 110 is surface-coated in a vacuum environment to form the first conductive layer 100. Referring to fig. 4, in an embodiment, the heating structure is formed by covering a semiconductor metal oxide on a substrate 110 as a first conductive layer 100 by vacuum deposition, and the thickness of the first conductive layer 100 is 40nm-60nm, and the first conductive layer 100 with the thickness has an output power of 300-400W per square meter.
S120: the first conductive layer 100 of the substrate 110 is cut to form a second conductive layer 120. In this embodiment, the first conductive layer 100 is cut to obtain the required second conductive layer 120, so as to control the power of the second conductive layer 120 within a safe range; referring to fig. 6, if the first conductive layer 100 with a thickness of 40nm-60nm is cut in the step S110, the output power of the formed second conductive layer 120 can be reduced to 150-200W per square meter.
S130: the conducting strips 130 are disposed on two sides of the second conductive layer 120 to form a heating structure. An electric field is formed between the two conducting bars 130, so that heat is generated when current passes through the second conducting layer 120.
In the method for manufacturing the heating structure of the present embodiment, the first conductive layer 100 is cut to reduce the conductive area of the first conductive layer 100, so as to obtain the second conductive layer 120, thereby effectively controlling the output power of the second conductive layer 120 and preventing the heating structure of the present embodiment from outputting high power to cause fire.
In one embodiment, referring to fig. 1 and 6, the method of cutting the first conductive layer 100 of the substrate 110 to form the second conductive layer 120 in step 120 includes:
s121: a plurality of cutting lines penetrating the first conductive layer 100 are formed along the current direction. Each of the cutting lines serves as a boundary line to divide the first conductive layer 100.
S122: the conductive layer between adjacent cutting lines is treated as an independent conductive unit 121. The first conductive layer 100 is cut into a plurality of independent conductive layers, the independent conductive layers are used as one conductive unit 121, each conductive unit 121 can conduct electricity, each conductive unit 121 is relatively independent, and damage of each conductive unit 121 does not extend to other conductive units 121.
S123: the conductive layer on the plurality of independent conductive units 121 is removed to form a second conductive layer 120 in a grid shape. The conductive elements 121 may be removed by physical etching or chemical etching. The power control of the second conductive layer 120 is realized by removing the spaced conductive units 121, that is, removing half of the first conductive layer 100 covering the substrate 110, without improving the manufacturing accuracy of the first conductive layer 100, so that the maximum power of the heating structure is limited and no fire hazard is generated.
Further, in step S120, a part of the conductive layer on the substrate 110 is removed by cutting, and similarly, in the manufacturing process, the second conductive layer 120 in a grid shape may be directly formed by a sputtering masking method, and this method also has the same technical effect.
Further, the method of removing the conductive layer on the plurality of independent conductive units in step S123 to form the second conductive layer 120 in a grid shape includes, but is not limited to:
removing the conductive layer on the conductive unit 121 using laser etching; alternatively, the first and second electrodes may be,
removing the conductive layer on the conductive unit 121 using a cutter; alternatively, the first and second electrodes may be,
the conductive layer on the conductive unit 121 is removed using chemical etching.
In one embodiment, referring to fig. 2 and 7, the method of cutting 120 the first conductive layer 100 of the substrate 110 to form the second conductive layer 120 includes:
s124: a plurality of cutting lines penetrating the first conductive layer 100 are formed along the current direction. Each of the cutting lines serves as a boundary line to cut the first conductive layer 100 into a plurality of independent conductive layers, each of which can be made conductive.
S125: the conductive layer between adjacent cutting lines is treated as an independent conductive unit 121. Each conductive layer is used as a conductive unit 121, each conductive unit 121 is relatively independent, and damage of each conductive unit 121 cannot extend to other conductive units 121.
S126: the conductive layers on selected conductive elements 121 are interrupted to form a second conductive layer 120 having a plurality of open conductive elements 121. Therefore, the conductive units 121 which are electrified to work are effectively reduced, so that the power of the whole second conductive layer 120 is controlled, the power control is realized under the condition that the manufacturing precision is not improved, the maximum power of a heating structure is limited, and the fire hazard can not be generated.
In one embodiment, referring to fig. 3 and 8, the method for cutting the semiconductive metal oxide of the substrate 110 to control the power of the conductive layer 120 in step S120 includes:
s127: the substrate 110 is equally divided into two second substrates 140 according to the shape of the letter "E", so that the second conductive layer 120 is in the shape of the letter "E"; the vertical side of the "E" -shaped second conductive layer 120 is used as the first side, the open end of the "E" -shaped second conductive layer 120 is used as the second side, and the first side and the second side are used for placing the tie bars. The substrate 110 is cut into equal parts, so that the first conductive layer 100 is respectively attached to the two second substrates 140 along with the cutting, and meanwhile, the substrate 110 is kept to have an E-shaped structure in the cutting process, so that the second conductive layer 120 has the same shape as the second substrate 140, the E-shaped structure is utilized to realize the conductive function, the columnar conductive layers in each E-shaped structure are arranged at intervals, and the damage does not affect each other even if the damage occurs, and the cutting of the substrate 110 into equal parts not only effectively controls the area of the metal oxide semiconductor on the second substrate 140 to realize the power control, but also cuts one substrate 110 into two second substrates 140, thereby greatly saving the cost.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the utility model. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive various changes or substitutions within the technical scope of the present invention, and these should be covered by the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (6)
1. A thermal structure, comprising:
the substrate is used as a carrier for forming a conductive layer by coating;
a second conductive layer overlying the substrate; wherein the second conductive layer is formed by cutting the conductive layer on the surface of the base material; and
and the guide strips are arranged on two sides of the second conducting layer.
2. The heating structure according to claim 1, wherein the second conductive layer includes a plurality of conductive elements in a direction of current flow, and the conductive elements are arranged at intervals so that the second conductive layer has a grid shape.
3. The heating structure according to claim 1, wherein the second conductive layer includes a plurality of cutting lines in a current flowing direction, and the conductive layer between adjacent cutting lines is a conductive unit, wherein a plurality of the conductive units are isolated so that the second conductive layer includes a plurality of open-circuit conductive units.
4. The heating structure according to claim 3, wherein the width of the cutting line is not less than 10 um.
5. The heating structure according to claim 1, wherein the substrate is equally divided into two second substrates in an "E" shape so that the second conductive layer is in an "E" shape;
the vertical side of the E-shaped second conducting layer is used as a first side, the open end of the E-shaped second conducting layer is used as a second side, and the first side and the second side are used for placing the flow guide strips.
6. The heating structure according to any one of claims 1 to 5, wherein the second conductive layer comprises one of a metal oxide semiconductor, graphene, and a metal alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121622005.XU CN216133672U (en) | 2021-07-16 | 2021-07-16 | Heating structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121622005.XU CN216133672U (en) | 2021-07-16 | 2021-07-16 | Heating structure |
Publications (1)
| Publication Number | Publication Date |
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| CN216133672U true CN216133672U (en) | 2022-03-25 |
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| CN202121622005.XU Active CN216133672U (en) | 2021-07-16 | 2021-07-16 | Heating structure |
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- 2021-07-16 CN CN202121622005.XU patent/CN216133672U/en active Active
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