CN216122358U - Direct-heating electron tube power amplifying circuit and direct-heating electron tube power amplifier - Google Patents

Abstract

The utility model discloses a direct heat electron tube power amplifying circuit and a direct heat electron tube power amplifier, wherein the circuit comprises: the direct heating device comprises a direct heating liner input end, a coupling module, a bias module, a first current amplification module, a second current amplification module and a signal output end; the input end of the direct heating liner is used for accessing a voltage signal of the direct heating liner; the coupling module is electrically connected with the input end of the direct heating liner and is used for coupling voltage signals of the direct heating liner; the bias module is electrically connected with the coupling module and used for biasing the coupling signal; the first current amplification module is electrically connected with the bias module and used for amplifying the push-level current according to the bias voltage; the second current amplification module and the first current amplification module are used for amplifying the current of the output stage; the signal output end is electrically connected with the second current amplification module. The utility model can increase the output power of the loudspeaker, has wider frequency performance, lower output internal resistance and higher damping coefficient, and can better control the output of the loudspeaker.

Description

Direct-heating electron tube power amplifying circuit and direct-heating electron tube power amplifier

Technical Field

The present invention relates to a direct electron tube, and more particularly, to a direct electron tube power amplifier circuit and a direct electron tube power amplifier.

Background

A direct electron tube is generally used in current acoustic equipment to drive a speaker. Because the power of the direct-heat electron tube is small, the loudspeaker with low efficiency is difficult to drive; in addition, the direct heat electron tube is limited by the output of the liner machine, and has poor frequency response, generally only 20Hz to 20 KHz. In addition, the thermionic valve has high output internal resistance, low damping coefficient and poor control force on the output of the loudspeaker.

In view of the above, it is necessary to provide further improvement on the circuit structure of the conventional direct electron tube.

SUMMERY OF THE UTILITY MODEL

To solve at least one of the above problems, it is a primary object of the present invention to provide a direct thermal electron tube power amplifier circuit and a direct thermal electron tube power amplifier.

In order to achieve the purpose, the utility model adopts a technical scheme that: there is provided a direct heat electron tube power amplifying circuit comprising: the direct heating device comprises a direct heating liner input end, a coupling module, a bias module, a first current amplification module, a second current amplification module and a signal output end; the input end of the direct heating liner is used for accessing a direct heating liner voltage signal; the coupling module is electrically connected with the input end of the direct heating liner and is used for coupling the voltage signal of the direct heating liner to form a coupling signal; the bias module is electrically connected with the coupling module and used for biasing the coupling signal; the first current amplification module is electrically connected with the bias module and used for amplifying the push-level current according to the bias voltage; the second current amplification module and the first current amplification module are used for amplifying the current of the output stage; the signal output end is electrically connected with the second current amplification module and used for outputting output-stage current.

The second current amplification module comprises a first triode and a second triode complementarily arranged with the first triode, bases of the first triode and the second triode are respectively connected with the first current amplification module, a collector of the first triode is connected with a power supply anode, a collector of the second triode is connected with a power supply cathode, and emitting electrodes of the first triode and the second triode are connected with a signal output end.

The second current amplification module comprises a plurality of first triodes arranged in parallel and a plurality of second triodes arranged in parallel.

The first triode and the second triode are both bipolar transistors, field effect transistors or MOSFET transistors.

And the emitting electrodes of the first triode and the second triode are connected with the signal output end through the protective resistor.

The first current amplification module comprises a third triode and a fourth triode which is complementarily arranged with the third triode, bases of the third triode and the fourth triode are connected with the bias module, a collector of the third triode is connected with a positive electrode of the power supply, a collector of the fourth triode is connected with a negative electrode of the power supply, and emitting electrodes of the third triode and the fourth triode are connected with the first current amplification module.

The coupling module is a coupling capacitor.

The bias module comprises a fifth triode, a first bias resistor and a second bias resistor, a collector and an emitter of the fifth triode are respectively connected with the coupling module, and a base of the fifth triode is connected with the positive electrode of the power supply through the first bias resistor and the negative electrode of the power supply through the second bias resistor.

In order to achieve the purpose, the utility model adopts another technical scheme that: a kind of direct heat electron tube power amplifier is provided, including the above-mentioned direct heat electron tube power amplifying circuit.

The technical scheme mainly comprises a direct heating liner input end, a coupling module, a bias module, a first current amplification module, a second current amplification module and a signal output end, and the first current amplification module and the second current amplification module can provide enough current for the loudspeaker and increase the output power of the loudspeaker. In addition, the scheme also has wider frequency performance, lower output internal resistance and higher damping coefficient, and can better control the output of the loudspeaker.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.

FIG. 1 is a block diagram of a thermionic valve power amplification circuit in accordance with an embodiment of the present invention;

FIG. 2 is a circuit diagram of a thermionic valve power amplifier circuit according to an embodiment of the present invention;

fig. 3 is a circuit configuration diagram of a direct heat electron tube power amplifying circuit according to another embodiment of the present invention;

fig. 4 is a circuit configuration diagram of a direct heat electron tube power amplifying circuit according to another embodiment of the present invention;

fig. 5 is a circuit configuration diagram of a direct heat electron tube power amplifying circuit according to another embodiment of the present invention.

The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

It should be noted that the description of the utility model relating to "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying any relative importance or implicit indication of the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.

Compared with the direct heat electron tube in the prior art, the direct heat electron tube has smaller power and is difficult to drive a loudspeaker with low efficiency; the utility model provides a power amplifying circuit of a direct heat electron tube, which aims to increase the output power, reduce the output internal resistance, increase the damping coefficient and further improve the control performance of the output frequency of a loudspeaker. The specific circuit structure of the power amplifier circuit of the direct electron tube refers to the following embodiments.

Referring to fig. 1, fig. 1 is a block diagram of a direct heat electron tube power amplifying circuit according to an embodiment of the present invention. In an embodiment of the present invention, the power amplifier circuit of the direct electron tube includes: the direct heating tank comprises a direct heating tank input end 10, a coupling module 20, a bias module 30, a first current amplification module 40, a second current amplification module 50 and a signal output end 60. The input end 10 of the direct heating liner is used for accessing a voltage signal of the direct heating liner; the coupling module 20 is electrically connected with the input end 10 of the direct heating liner and is used for coupling the voltage signal of the direct heating liner to form a coupling signal; the bias module 30 is electrically connected with the coupling module 20 and is used for biasing the coupling signal; the first current amplifying module 40 is electrically connected with the bias module 30 and is used for amplifying the push-level current according to the bias voltage; the second current amplifying module 50 and the first current amplifying module 40 are used for amplifying the output stage current; the signal output terminal 60 is electrically connected to the second current amplifying module 50, and is configured to output an output stage current.

In this embodiment, the direct-heating tank input end 10 may be externally connected with a direct-heating tank voltage signal, the coupling module 20 may couple the direct-heating tank voltage signal to form a coupling signal, the coupling signal is transmitted to the first current amplification module 40 after passing through the bias effect of the bias module 30, the first current amplification module 40 may amplify the driving-stage current, the second current amplification module 50 is connected with the first current amplification module 40 to amplify the driving-stage current, and finally, the driving-stage current is output through the signal output end 60 to drive the speaker to work. This scheme can provide enough big electric current for the speaker through adopting first current amplification module 40 and second current amplification module 50, can increase the output of speaker. In addition, the scheme also has wider frequency response, lower output internal resistance and higher damping coefficient, and can better control the loudspeaker.

Referring to fig. 2 to 5, fig. 2 is a circuit structure diagram of a direct heat electron tube power amplifying circuit according to an embodiment of the utility model; fig. 3 is a circuit configuration diagram of a direct heat electron tube power amplifying circuit according to another embodiment of the present invention; fig. 4 is a circuit configuration diagram of a direct heat electron tube power amplifying circuit according to another embodiment of the present invention. Fig. 5 is a circuit configuration diagram of a direct heat electron tube power amplifying circuit according to another embodiment of the present invention. In a specific embodiment, the second current amplifying module 50 includes a first transistor QA and a second transistor QB complementarily configured to the first transistor QA, bases of the first transistor QA and the second transistor QB are respectively connected to the first current amplifying module 40, a collector of the first transistor QA is connected to a positive electrode of a power supply, a collector of the second transistor QB is connected to a negative electrode of the power supply, and emitters of the first transistor QA and the second transistor QB are connected to the signal output terminal 60. In this embodiment, the first triode QA and the second triode QB are complementarily configured, specifically, the collector of the first triode QA is connected to the positive electrode of the power supply, the base is connected to the second current amplification module 50, the source is connected to the collector of the second triode QB, the base of the second triode QB is connected to the second current amplification module 50, and the source of the second triode QB is connected to the negative electrode of the power supply. This scheme adopts first triode QA and second triode QB can amplify output level current. In order to increase the amplification factor of the output stage current, the number of the first transistor QA and the second transistor QB may be two or more. Specifically, the second current amplifying module 50 includes a plurality of first triodes QA arranged in parallel, and a plurality of second triodes QB arranged in parallel. The number of the first transistor QA and the second transistor QB may be set according to actual requirements, and the number of the first transistor QA and the second transistor QB in this embodiment is preferably 4 to 7. It is understood that, in practical applications, other numbers of transistors can be selected for the first transistor QA and the second transistor QB. In addition, a plurality of second triodes QB arranged in parallel can also reduce the output internal resistance, improve the damping coefficient and be favorable for controlling the loudspeaker.

In a specific embodiment, the first transistor QA and the second transistor QB are bipolar transistors, field effect transistors or MOSFET transistors. Further, the emitters of the first transistor QA and the second transistor QB are connected to the signal output terminal 60 through a protection resistor. The signal output terminal 60 is connected to the speaker, and in order to improve the smoothness of the current signal output from the signal output terminal 60, the signal output terminal 60 is connected to the ground through a fifteenth resistor R15 and an eleventh capacitor C11 connected in series. The protection resistors are R4-R9, R38 and the like in FIG. 2, R4-R9, R38 in FIG. 3, R4, R6, R7, R9 and the like in FIG. 4, and R15 in FIG. 5.

In a specific embodiment, the first current amplifying module 40 includes a third transistor Q7 and a fourth transistor Q9 complementary to the third transistor Q7, bases of the third transistor Q7 and the fourth transistor Q9 are connected to the bias module 30, a collector of the third transistor Q7 is connected to the positive electrode of the power supply, a collector of the fourth transistor Q9 is connected to the negative electrode of the power supply, and emitters of the third transistor Q7 and the fourth transistor Q9 are connected to the first current amplifying module 40.

The present embodiment can amplify the push stage current by using the complementary third transistor Q7 and fourth transistor Q9. Specifically, the collector of the third transistor Q7 is connected to the positive electrode of the power supply, the base is connected to the bias module 30, the source is connected to the emitter of the fourth transistor Q9, the collector of the fourth transistor Q9 is connected to the negative electrode of the power supply, and the base of the fourth transistor Q9 is connected to the bias module 30. In addition, a tenth resistor R10 and a fourteenth resistor R14 are connected in series between the emitters of the third transistor Q7 and the fourth transistor Q9. The tenth capacitor and the second diode are connected in parallel to two ends of the fourteenth resistor R14.

In a specific embodiment, the coupling module 20 is a coupling capacitor. The coupling capacitor comprises at least one capacitor. The coupling capacitance is as C9, C12 in FIGS. 2-4, C9 in FIG. 5.

In a specific embodiment, the bias module 30 includes a fifth transistor Q8, a first bias resistor and a second bias resistor, the collector and emitter of the fifth transistor Q8 are respectively connected to the coupling module 20, and the base of the fifth transistor Q8 is connected to the positive electrode of the power supply through the first bias resistor and the negative electrode of the power supply through the second bias resistor. Specifically, the fifth transistor Q8 has a bias function to control the first current amplifying module 40. The first bias resistor includes a twelfth resistor R12, a first resistor R1 and a first variable resistor VR1 connected in series, and the second bias resistor includes a sixteenth resistor R16, a second variable resistor VR2 and a twenty-second resistor R22 connected in series.

Referring to fig. 5, fig. 5 is a diamond buffer circuit. The diamond buffer circuit comprises a first triode Q1, a second triode Q2, a seventh triode Q7 and a ninth triode Q9, wherein an emitting electrode of the first triode Q1 is connected with a positive electrode of a power supply, a collecting electrode of the first triode Q1 is connected with an emitting electrode of the ninth triode Q9, a base electrode of the first triode Q2 is connected with a base electrode of the second triode Q9, and a collecting electrode of the ninth triode Q9 is connected with a negative electrode of the power supply; the base electrode of the ninth triode Q9 is connected with the base electrode of the seventh triode Q7, the collector electrode of the seventh triode Q7 is connected with the positive electrode of the power supply, the emitter electrode of the seventh triode Q7 is connected with the collector electrode of the second triode Q2, and the emitter electrode of the second triode Q2 is connected with the negative electrode of the power supply.

In an embodiment of the utility model, the thermionic valve power amplifier includes the above-mentioned power amplifying circuit. For a specific structure of the power amplifier circuit of the direct electron tube, please refer to the above embodiments, which are not described herein. The power amplifier circuit has at least all the advantages and effects of the power amplifier circuit.

The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and all modifications and equivalents made by the contents of the specification and drawings or directly/indirectly applied to other related technical fields within the spirit of the present invention are included in the scope of the present invention.

Claims (9)

1. A thermionic valve power amplification circuit, comprising: the direct heating device comprises a direct heating liner input end, a coupling module, a bias module, a first current amplification module, a second current amplification module and a signal output end; the input end of the direct heating liner is used for accessing a direct heating liner voltage signal; the coupling module is electrically connected with the input end of the direct heating liner and is used for coupling the voltage signal of the direct heating liner to form a coupling signal; the bias module is electrically connected with the coupling module and used for biasing the coupling signal; the first current amplification module is electrically connected with the bias module and used for amplifying the push-level current according to the bias voltage; the second current amplification module and the first current amplification module are used for amplifying the current of the output stage; the signal output end is electrically connected with the second current amplification module and used for outputting output-stage current.

2. The thermionic valve power amplifying circuit as claimed in claim 1, wherein said second current amplifying module comprises a first transistor and a second transistor complementary to said first transistor, wherein bases of said first and second transistors are connected to said first current amplifying module, a collector of said first transistor is connected to a positive power supply, a collector of said second transistor is connected to a negative power supply, and emitters of said first and second transistors are connected to a signal output terminal.

3. The thermionic valve power amplifying circuit as set forth in claim 2, wherein the second current amplifying block comprises a plurality of first transistors arranged in parallel and a plurality of second transistors arranged in parallel.

4. A thermionic valve power amplifier circuit as set forth in claim 3, wherein the first and second transistors are bipolar transistors, field effect transistors or MOSFET transistors.

5. A thermionic valve power amplifying circuit as claimed in claim 2 or claim 3 wherein the emitters of the first and second transistors are connected to a signal output terminal via a protective resistor.

6. A thermionic valve power amplifier circuit as set forth in claim 1, wherein said first current amplifying means comprises a third transistor and a fourth transistor complementary to said third transistor, wherein the bases of said third and fourth transistors are connected to said biasing means, the collector of said third transistor is connected to the positive power supply, the collector of said fourth transistor is connected to the negative power supply, and the emitters of said third and fourth transistors are connected to said first current amplifying means.

7. The thermionic valve power amplifying circuit as set forth in claim 1, wherein said coupling means is a coupling capacitor.

8. The thermionic valve power amplifying circuit as set forth in claim 1, wherein the bias module comprises a fifth transistor, a first bias resistor and a second bias resistor, wherein a collector and an emitter of the fifth transistor are respectively connected to the coupling module, and a base of the fifth transistor is connected to a positive electrode of the power supply through the first bias resistor and a negative electrode of the power supply through the second bias resistor.

9. A thermionic valve power amplifier comprising a thermionic valve power amplifying circuit as claimed in any one of claims 1 to 8.

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