CN216120275U - Vertical power MOS semiconductor device - Google Patents
Vertical power MOS semiconductor device Download PDFInfo
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- CN216120275U CN216120275U CN202122870089.5U CN202122870089U CN216120275U CN 216120275 U CN216120275 U CN 216120275U CN 202122870089 U CN202122870089 U CN 202122870089U CN 216120275 U CN216120275 U CN 216120275U
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- power mos
- vertical power
- mos semiconductor
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Abstract
The utility model provides a vertical power MOS semiconductor device, which relates to the technical field of semiconductor devices and comprises a shell, wherein the inner wall of the shell is connected with a semiconductor body in a sliding manner, inner bins are arranged in the shell, the number of the inner bins is two, the inner walls of one group of inner bins are connected with threaded rods in a rotating manner, the threaded rods penetrate through the inner walls of the inner bins and extend to the outer surface of the shell, and one end, far away from the shell, of each threaded rod is fixedly provided with a rotating handle. According to the utility model, through arranging the shell, the semiconductor body, the inner bin, the threaded rod, the rotating handle, the limiting rod, the movable block and the sliding block, the function of containing and protecting the vertical power MOS semiconductor is realized, the containing mode of the shell for the vertical power MOS semiconductor is changed, so that when a worker needs to use the vertical power MOS semiconductor, the vertical power MOS semiconductor can be conveniently and quickly taken out of the shell, the time and the energy of the worker are saved, and the working efficiency of the worker is improved.
Description
Technical Field
The utility model relates to the technical field of semiconductor devices, in particular to a vertical power MOS semiconductor device.
Background
In order to prevent the vertical power MOS semiconductor from being damaged by external force before being used, the outer surface of the vertical power MOS semiconductor is protected by the protection device to prevent the vertical power MOS semiconductor from being damaged by the external force, but the conventional protection device generally places the vertical power MOS semiconductor in the shell completely, so that when a worker needs to use the vertical power MOS semiconductor, the vertical power MOS semiconductor is inconvenient to take out from the shell, the worker is more troublesome in use, the time and the energy of the worker are wasted, and the working efficiency of the worker is influenced.
SUMMERY OF THE UTILITY MODEL
The utility model aims to solve the defects in the prior art and provides a vertical power MOS semiconductor device.
In order to achieve the purpose, the utility model adopts the following technical scheme: the utility model provides a vertical power MOS semiconductor device, includes the casing, the inner wall sliding connection of casing has the semiconductor body, interior storehouse has been seted up to the inside of casing, the quantity in interior storehouse is two sets of, and is a set of the inner wall in interior storehouse is rotated and is connected with the threaded rod, the threaded rod runs through the inner wall in interior storehouse and extends to the surface of casing, the one end that the casing was kept away from to the threaded rod is equipped with admittedly and changes the handle, another group the inner wall fixed mounting in interior storehouse has the gag lever post, one side lateral wall fixed mounting of semiconductor body has the movable block, the inner wall sliding connection in movable block and interior storehouse, the fixed surface of semiconductor body installs the slider, the surface of casing is provided with seal assembly.
In order to realize the effect of driving the movable block to move when the threaded rod rotates, the utility model is improved in that a threaded hole is formed in the movable block, and the threaded rod is meshed with the threaded hole.
In order to achieve the effect of limiting the sliding direction of the movable block, the utility model is improved in that a limiting hole is formed in the upper surface of the movable block, and the limiting rod penetrates through the limiting hole.
In order to realize the effect of assisting the semiconductor body to slide, the utility model improves that the outer surface of the shell is provided with a sliding groove, and the sliding block is connected with the inner wall of the sliding groove in a sliding way.
In order to realize the effect of sealing the shell, the utility model has the improvement that the sealing assembly comprises a sealing sleeve, the sealing sleeve is in sliding connection with the outer surface of the shell, a connecting plate is fixedly arranged on the upper surface of the sealing sleeve, a limiting block is fixedly arranged on the outer surface of the shell, and a fixing rod is fixedly arranged on the side wall of one side of the connecting plate.
In order to achieve the effect of limiting the sliding direction of the connecting plate, the utility model is improved in that the connecting plate is connected with the outer surface of the limiting block in a sliding mode.
In order to realize the effect of fixing the sealing sleeve, the utility model has the improvement that the fixed rod is made of silica gel, and the outer surface of the shell is provided with a fixed hole which is inserted with the fixed rod.
Advantageous effects
Compared with the prior art, the utility model has the advantages and positive effects that,
1. according to the utility model, through the arrangement of the shell, the semiconductor body, the inner bin, the threaded rod, the rotating handle, the limiting rod, the movable block and the sliding block, the function of containing and protecting the vertical power MOS semiconductor is realized, the containing mode of the shell for the vertical power MOS semiconductor is changed, so that when a worker needs to use the vertical power MOS semiconductor, the vertical power MOS semiconductor can be conveniently and quickly taken out of the shell, the time and the energy of the worker are saved, and the working efficiency of the worker is improved.
2. According to the utility model, the sealing sleeve, the connecting plate, the limiting block and the fixing rod are arranged, so that the function of sealing the shell is realized, moisture in air is prevented from entering the interior of the shell through the sealing, the vertical power MOS semiconductor is prevented from being corroded, and the vertical power MOS semiconductor is prevented from being damaged.
Drawings
Fig. 1 is a schematic perspective view of a vertical power MOS semiconductor device according to the present invention;
FIG. 2 is a schematic cross-sectional structure diagram of a vertical power MOS semiconductor device according to the present invention;
FIG. 3 is a schematic diagram of a partial structure of a vertical power MOS semiconductor device according to the present invention;
fig. 4 is an exploded view of a vertical power MOS semiconductor device according to the present invention.
Illustration of the drawings:
1. a housing; 2. a semiconductor body; 3. an inner bin; 4. a threaded rod; 5. turning a handle; 6. a limiting rod; 7. a movable block; 8. a slider; 9. sealing sleeves; 10. a connecting plate; 11. a limiting block; 12. and (5) fixing the rod.
Detailed Description
In order that the above objects, features and advantages of the present invention can be more clearly understood, the present invention will be further described with reference to the accompanying drawings and examples. It should be noted that the embodiments and features of the embodiments of the present application may be combined with each other without conflict.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, however, the present invention may be practiced in other ways than those specifically described herein, and thus the present invention is not limited to the specific embodiments of the present disclosure.
Referring to fig. 1-4, the present invention provides a technical solution: a vertical power MOS semiconductor device comprises a shell 1, the inner wall of the shell 1 is connected with a semiconductor body 2 in a sliding manner, the shell 1 is used for containing and protecting the semiconductor body 2, the inner part of the shell 1 is provided with two groups of inner bins 3, the inner wall of one group of the inner bins 3 is connected with a threaded rod 4 in a rotating manner, the threaded rod 4 penetrates through the inner wall of the inner bin 3 and extends to the outer surface of the shell 1, the inner wall of the inner bin 3 supports the threaded rod 4, one end of the threaded rod 4, far away from the shell 1, is fixedly provided with a rotating handle 5, the rotating handle 5 is rotated to drive the threaded rod 4 to rotate in the inner bin 3, the inner wall of the other group of the inner bins 3 is fixedly provided with a limiting rod 6, the inner wall of the inner bin 3 is used for fixing the limiting rod 6, the side wall of one side of the semiconductor body 2 is fixedly provided with a movable block 7, when the movable block 7 moves, the semiconductor body 2 is driven to move, the movable block 7 is connected with the inner wall of the inner bin 3 in a sliding manner, the outer surface of the semiconductor body 2 is fixedly provided with a slide block 8, and the slide block 8 assists the movement of the semiconductor body 2.
The movable block 7 is internally provided with a threaded hole, the threaded rod 4 is meshed with the threaded hole, and when the threaded rod 4 rotates, the movable block 7 is driven to move.
Spacing hole has been seted up to the upper surface of movable block 7, and gag lever post 6 runs through the inside that sets up at spacing hole, and when movable block 7 moved, gag lever post 6 was through the slip direction of spacing hole restriction movable block 7 for movable block 7 slides at the surface of threaded rod 4 along gag lever post 6, drives semiconductor body 2 simultaneously and slides in the inside of casing 1.
The outer surface of the shell 1 is provided with a sliding groove, the sliding block 8 is connected with the inner wall of the sliding groove in a sliding mode, and when the sliding block 8 slides in the sliding groove, the semiconductor body 2 is assisted to slide in the shell 1.
The outer surface of the shell 1 is provided with a sealing assembly, the sealing assembly comprises a sealing sleeve 9, the sealing sleeve 9 is in sliding connection with the outer surface of the shell 1, the sealing sleeve 9 seals the shell 1, a connecting plate 10 is fixedly arranged on the upper surface of the sealing sleeve 9, the sealing sleeve 9 fixes the connecting plate 10, a limiting block 11 is fixedly arranged on the outer surface of the shell 1, the shell 1 fixes the limiting block 11, a fixing rod 12 is fixedly arranged on the side wall of one side of the connecting plate 10, and the fixing rod 12 fixes the connecting plate 10.
The connecting plate 10 is slidably connected to the outer surface of the stopper 11, and when the connecting plate 10 slides on the side wall of the stopper 11, the sliding direction of the connecting plate 10 is limited, so as to limit the sliding direction of the sealing sleeve 9.
The material of dead lever 12 is silica gel, and the fixed orifices of pegging graft mutually with dead lever 12 is seted up to the surface of casing 1, and silica gel has compliance, resilience and autohension for after dead lever 12 slips into the inside of fixed orifices, fix seal cover 9.
The working principle is as follows: when the semiconductor body 2 is used, the sealing sleeve 9 is pulled downwards firstly, the connecting plate 10 is driven to slide on the side wall of one side of the limiting block 11, meanwhile, the fixing rod 12 slides out of the inside of the fixing hole, then, the sealing sleeve 9 is pulled continuously, after the sealing sleeve 9 is separated from the shell 1, the sealing of the shell 1 is removed, then, the rotating handle 5 is rotated, the threaded rod 4 is driven to rotate in the inner bin 3, when the threaded rod 4 rotates, the movable block 7 is driven to move, when the movable block 7 moves, the limiting rod 6 limits the sliding direction of the movable block 7 through the limiting hole, so that the movable block 7 slides on the outer surface of the threaded rod 4 along the limiting rod 6, when the movable block 7 moves, the inner part of the shell 1 of the semiconductor body 2 is driven to slide, meanwhile, the sliding block 8 slides in the inner part of the sliding groove, the semiconductor body 2 is assisted to slide in the inner part of the shell 1, when the semiconductor body 2 slides out of the inner part of the shell 1, can use semiconductor body 2, when protecting semiconductor body 2, reverse rotation semiconductor body 2 for semiconductor body 2 gets back to the inside of casing 1 again, is close to casing 1 with seal cover 9 again, removes seal cover 9 after that, makes connecting plate 10 slide at the surface of casing 1, after the inside of dead lever 12 cunning into the fixed orifices, fixes seal cover 9, and seal cover 9 seals casing 1.
The present invention is not limited to the above preferred embodiments, and any modifications, equivalent substitutions and improvements made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (7)
1. A vertical power MOS semiconductor device comprising a housing (1), characterized in that: the inner wall of the shell (1) is connected with a semiconductor body (2) in a sliding way, an inner bin (3) is arranged inside the shell (1), the number of the inner bins (3) is two, the inner wall of one group of the inner bins (3) is rotationally connected with a threaded rod (4), the threaded rod (4) penetrates through the inner wall of the inner bin (3) and extends to the outer surface of the shell (1), a rotating handle (5) is fixedly arranged at one end of the threaded rod (4) far away from the shell (1), a limiting rod (6) is fixedly arranged on the inner wall of the other group of the inner bins (3), a movable block (7) is fixedly arranged on the side wall of one side of the semiconductor body (2), the inner wall sliding connection in activity piece (7) and interior storehouse (3), the fixed surface of semiconductor body (2) installs slider (8), the surface of casing (1) is provided with seal assembly.
2. A vertical power MOS semiconductor device according to claim 1, wherein: the movable block (7) is internally provided with a threaded hole, and the threaded rod (4) is meshed with the threaded hole.
3. A vertical power MOS semiconductor device according to claim 1, wherein: the upper surface of the movable block (7) is provided with a limiting hole, and the limiting rod (6) penetrates through the limiting hole.
4. A vertical power MOS semiconductor device according to claim 1, wherein: the outer surface of the shell (1) is provided with a sliding groove, and the sliding block (8) is connected with the inner wall of the sliding groove in a sliding mode.
5. A vertical power MOS semiconductor device according to claim 1, wherein: the sealing assembly comprises a sealing sleeve (9), the sealing sleeve (9) is in sliding connection with the outer surface of the shell (1), a connecting plate (10) is fixedly arranged on the upper surface of the sealing sleeve (9), a limiting block (11) is fixedly arranged on the outer surface of the shell (1), and a fixing rod (12) is fixedly arranged on the side wall of one side of the connecting plate (10).
6. A vertical power MOS semiconductor device according to claim 5, wherein: the connecting plate (10) is connected with the outer surface of the limiting block (11) in a sliding mode.
7. A vertical power MOS semiconductor device according to claim 5, wherein: the material of dead lever (12) is silica gel, the fixed orifices of pegging graft mutually with dead lever (12) are seted up to the surface of casing (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122870089.5U CN216120275U (en) | 2021-11-19 | 2021-11-19 | Vertical power MOS semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122870089.5U CN216120275U (en) | 2021-11-19 | 2021-11-19 | Vertical power MOS semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN216120275U true CN216120275U (en) | 2022-03-22 |
Family
ID=80718258
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202122870089.5U Active CN216120275U (en) | 2021-11-19 | 2021-11-19 | Vertical power MOS semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN216120275U (en) |
-
2021
- 2021-11-19 CN CN202122870089.5U patent/CN216120275U/en active Active
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