CN216086593U - Ultra-low noise broadband amplifier - Google Patents
Ultra-low noise broadband amplifier Download PDFInfo
- Publication number
- CN216086593U CN216086593U CN202122713780.2U CN202122713780U CN216086593U CN 216086593 U CN216086593 U CN 216086593U CN 202122713780 U CN202122713780 U CN 202122713780U CN 216086593 U CN216086593 U CN 216086593U
- Authority
- CN
- China
- Prior art keywords
- resistor
- type mos
- capacitor
- ultra
- inductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Amplifiers (AREA)
Abstract
The utility model discloses an ultra-low noise broadband amplifier, which comprises a signal input end and a signal output end, wherein the signal input end is connected with one end of a capacitor C1, the other end of the capacitor C1 is connected with one end of an inductor L1, the other end of the inductor L1 is respectively connected with one end of a resistor R2 and a grid electrode of a P-type MOS tube M3, the other end of the resistor R2 is respectively connected with one end of a resistor R1, a grid electrode of the P-type MOS tube M1 and a drain electrode of the P-type MOS tube M1, the other end of the resistor R1 is respectively connected with + Vdd, a grid electrode of the P-type MOS tube M2 and one end of the inductor L3, the ultra-low noise broadband amplifier provided by the utility model has the P-type MOS tube as a common source amplifier to access a high-frequency component and a harmonic wave generated by inputting a signal into an integral circuit, good noise matching is realized when the broadband signal enters an amplifying circuit, and then the broadband gain is improved by an operational amplifier A1, so that the noise coefficient is reduced, the amplification gain effect is improved when the same power consumption is used.
Description
Technical Field
The utility model relates to the field of broadband amplifiers, in particular to an ultra-low noise broadband amplifier.
Background
The low-noise broadband amplifier circuit is a front-end module of a radio frequency chip, is required to have the characteristics of low noise, high bandwidth, high linearity, high gain and low power consumption, and is mainly used in technical schemes of FM demodulators, TV demodulators, UWB or other broadband radio frequencies. The existing low-noise broadband amplifier has the defects of large noise coefficient, large power consumption and low gain.
SUMMERY OF THE UTILITY MODEL
The utility model provides an ultra-low noise broadband amplifier.
The utility model is realized by the following technical scheme:
an ultra-low noise broadband amplifier comprises a signal input end and a signal output end, wherein the signal input end is connected with one end of a capacitor C1, the other end of the capacitor C1 is connected with one end of an inductor L1, the other end of the inductor L1 is respectively connected with one end of a resistor R2 and the grid of a P-type MOS tube M3, the other end of the resistor R2 is respectively connected with one end of a resistor R1, the grid of a P-type MOS tube M1 and the drain of a P-type MOS tube M1, the other end of the resistor R1 is respectively connected with + Vdd, the grid of a P-type MOS tube M2 and one end of an inductor L3, the other end of the inductor L3 is respectively connected with the source of a P-type MOS tube M2, one end of a capacitor C2 and one end of a capacitor C9, the drain of a P-type MOS tube M2 is connected with one end of an inductor L2, the other end of the inductor L2 is connected with the source of a P-type MOS tube M3, the other end of the capacitor C3 is respectively connected with one end of a resistor R3 and the non-phase input end of an operational amplifier A1, and the other end of the resistor R3 is grounded, the inverting input end of the operational amplifier A1 is connected with one end of a resistor R5, the other end of the resistor R5 is connected with-Vdd, the voltage input end of the operational amplifier A1 is connected with + Vcc, the voltage output end of the operational amplifier A1 is connected with-Vcc, the output end of the operational amplifier A1 is connected with one end of a resistor R4, and the other end of the resistor R4 is connected with a signal output end.
Further, the source of the P-type MOS transistor M1 and the source of the P-type MOS transistor M2 are both connected to a signal ground.
Further, the other end of the capacitor C2 is connected to signal ground.
Furthermore, a voltage input end of the operational amplifier a1 is connected to one end of a capacitor C5, a voltage output end of the operational amplifier a1 is connected to one end of a capacitor C4, the other end of the capacitor C5 is connected to a signal output end, and the other end of the capacitor C4 is grounded and connected to the signal output end respectively.
Further, the capacitance of the capacitor C4 and the capacitance of the capacitor C5 are both 4.7 muF.
Furthermore, the resistances of the resistor R1, the resistor R2, the resistor R3 and the resistor R4 are all 50 Ω, and the resistance of the resistor R5 is 100 Ω.
Further, the + Vcc is +5v, and the-Vcc is-5 v.
Further, the P-type MOS transistor M21, the P-type MOS transistor M2, and the P-type MOS transistor M3 are common-source P-type MOS transistors.
The utility model has the beneficial effects that:
the ultra-low noise broadband amplifier inputs signals into rear capacitors C1, C2, C3 and an inductor L1 in the whole circuit to achieve output reactance matching and higher frequency stability, wherein a P-type MOS tube is used as a common source amplifier to connect generated high-frequency components and harmonics into a signal ground, good noise matching is achieved when the broadband signals enter the amplifying circuit, broadband gain is improved after the broadband signals pass through an operational amplifier A1, noise coefficients are reduced, and the amplifying gain effect is improved when the same power consumption is used.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
Fig. 1 is a schematic circuit diagram of an ultra-low noise wideband amplifier according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to examples and accompanying drawings, and the exemplary embodiments and descriptions thereof are only used for explaining the present invention and are not meant to limit the present invention.
Example 1
As shown in fig. 1, an ultra-low noise wideband amplifier includes a signal input terminal and a signal output terminal, the signal input terminal is connected to one end of a capacitor C1, the other end of the capacitor C1 is connected to one end of an inductor L1, the other end of the inductor L1 is connected to one end of a resistor R2 and the gate of a P-type MOS transistor M3, the other end of the resistor R2 is connected to one end of a resistor R1, the gate of the P-type MOS transistor M1 and the drain of the P-type MOS transistor M1, the other end of the resistor R1 is connected to Vdd and the gate of the P-type MOS transistor M2 and one end of the inductor L3, the other end of the inductor L3 is connected to the source of the P-type MOS transistor M2, one end of a capacitor C2 and one end of a capacitor C3, the drain of the P-type MOS transistor M2 is connected to one end of an inductor L2, the other end of the inductor L2 is connected to the source of the P-type MOS transistor M3, the other end of the capacitor C3 is connected to one end of a resistor R3 and the non-phase operational amplifier a1, the other end of the resistor R3 is grounded, the inverting input end of the operational amplifier A1 is connected with one end of the resistor R5, the other end of the resistor R5 is connected with-Vdd, the voltage input end of the operational amplifier A1 is connected with + Vcc, the voltage output end of the operational amplifier A1 is connected with-Vcc, the output end of the operational amplifier A1 is connected with one end of the resistor R4, and the other end of the resistor R4 is connected with the signal output end.
Further, the source of the P-type MOS transistor M1 and the source of the P-type MOS transistor M2 are both connected to a signal ground.
Further, the other end of the capacitor C2 is connected to signal ground.
Furthermore, a voltage input end of the operational amplifier a1 is connected to one end of a capacitor C5, a voltage output end of the operational amplifier a1 is connected to one end of a capacitor C4, the other end of the capacitor C5 is connected to a signal output end, and the other end of the capacitor C4 is grounded and connected to the signal output end respectively.
Further, the capacitance of the capacitor C4 and the capacitance of the capacitor C5 are both 4.7 muF.
Furthermore, the resistances of the resistor R1, the resistor R2, the resistor R3 and the resistor R4 are all 50 Ω, and the resistance of the resistor R5 is 100 Ω.
Further, the + Vcc is +5v, and the-Vcc is-5 v.
Further, the P-type MOS transistor M21, the P-type MOS transistor M2, and the P-type MOS transistor M3 are common-source P-type MOS transistors.
The foregoing shows and describes the general principles and broad features of the present invention and advantages thereof. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the utility model as claimed. The scope of the utility model is defined by the appended claims and equivalents thereof.
Claims (8)
1. An ultra-low noise broadband amplifier is characterized by comprising a signal input end and a signal output end, wherein the signal input end is connected with one end of a capacitor C1, the other end of the capacitor C1 is connected with one end of an inductor L1, the other end of the inductor L1 is respectively connected with one end of a resistor R2 and the grid of a P-type MOS tube M3, the other end of the resistor R2 is respectively connected with one end of a resistor R1, the grid of the P-type MOS tube M1 and the drain of the P-type MOS tube M1, the other end of the resistor R1 is respectively connected with + Vdd and the grid of a P-type MOS tube M2 and one end of the inductor L3, the other end of the inductor L3 is respectively connected with the source of the P-type MOS tube M2, one end of a capacitor C2 and one end of a capacitor C3, the drain of the P-type MOS tube M2 is connected with one end of an inductor L2, the other end of the inductor L2 is connected with the source of the P-type MOS tube M3, the other end of the capacitor C3 is respectively connected with one end of a resistor R3 and the in-phase operational amplifier A1, the other end of the resistor R3 is grounded, the inverting input end of the operational amplifier A1 is connected with one end of the resistor R5, the other end of the resistor R5 is connected with-Vdd, the voltage input end of the operational amplifier A1 is connected with + Vcc, the voltage output end of the operational amplifier A1 is connected with-Vcc, the output end of the operational amplifier A1 is connected with one end of the resistor R4, and the other end of the resistor R4 is connected with the signal output end.
2. The ultra-low noise broadband amplifier of claim 1, wherein the source of the P-type MOS transistor M1 and the source of the P-type MOS transistor M2 are both connected to signal ground.
3. The ultra-low noise broadband amplifier of claim 1, wherein the other end of the capacitor C2 is connected to signal ground.
4. The ultra-low noise broadband amplifier of claim 1, wherein a voltage input terminal of the operational amplifier a1 is connected to one terminal of a capacitor C5, a voltage output terminal of the operational amplifier a1 is connected to one terminal of a capacitor C4, the other terminal of the capacitor C5 is connected to a signal output terminal, and the other terminal of the capacitor C4 is connected to ground and the signal output terminal, respectively.
5. The ultra-low noise broadband amplifier of claim 4, wherein the capacitance of the capacitor C4 and the capacitance of the capacitor C5 are both 4.7 μ F.
6. The ultra-low noise broadband amplifier of claim 1, wherein the resistances of the resistor R1, the resistor R2, the resistor R3 and the resistor R4 are all 50 Ω, and the resistance of the resistor R5 is 100 Ω.
7. The ultra-low noise wideband amplifier of claim 1, where + Vcc is +5v and-Vcc is-5 v.
8. The ultra-low noise broadband amplifier of claim 1, wherein the P-type MOS transistor M21, the P-type MOS transistor M2 and the P-type MOS transistor M3 are common-source P-type MOS transistors.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122713780.2U CN216086593U (en) | 2021-11-08 | 2021-11-08 | Ultra-low noise broadband amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122713780.2U CN216086593U (en) | 2021-11-08 | 2021-11-08 | Ultra-low noise broadband amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN216086593U true CN216086593U (en) | 2022-03-18 |
Family
ID=80659808
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202122713780.2U Active CN216086593U (en) | 2021-11-08 | 2021-11-08 | Ultra-low noise broadband amplifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN216086593U (en) |
-
2021
- 2021-11-08 CN CN202122713780.2U patent/CN216086593U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7688146B2 (en) | Single-ended input to differential-ended output low noise amplifier | |
| CN101834567B (en) | Broadband gain adjustable low-noise amplifier | |
| CN102820857B (en) | Transimpedance amplifier with broad band and high gain | |
| US20110102088A1 (en) | Low noise amplifier circuit | |
| US8704597B2 (en) | Amplifiers and related receiver systems | |
| CN112543003B (en) | Low noise amplifier with low noise coefficient and ultra-wideband | |
| CN114172464A (en) | Broadband harmonic suppression amplifier | |
| CN112165304A (en) | Millimeter wave low noise amplifier chip | |
| CN109921747A (en) | Wideband low noise amplifier | |
| CN1767374B (en) | Low noise amplifier and method for amplifying input signal | |
| CN111130577A (en) | Anti-interference receiver circuit for radio frequency transceiver chip | |
| CN100559706C (en) | Radio-frequency differential-to-single-ended converter | |
| CN109391236A (en) | A kind of signal amplification circuit and millimeter-wave signal amplifying circuit | |
| CN216086593U (en) | Ultra-low noise broadband amplifier | |
| CN202026277U (en) | Mixer used in radio frequency identification | |
| CN100576722C (en) | Single-ended input both-end output amplifier circuit and signal processing circuit | |
| US20080074194A1 (en) | Amplifying circuit utilizing nonlinear gate capacitance for enhancing linearity and related method thereof | |
| CN103391050B (en) | A kind of CMOS low-noise amplifier | |
| CN105610455A (en) | Signal receiving apparatus and signal receiving method | |
| CN206894589U (en) | A kind of Ka wave bands quadruple chip | |
| CN115765637A (en) | Single-stage differential cascode amplifier module applied to W wave band | |
| CN210297646U (en) | Low-noise amplification module | |
| US7298203B2 (en) | Amplification system capable of reducing DC offset | |
| CN209105172U (en) | A kind of RF front-end circuit | |
| CN101079596A (en) | Wide frequency low-noise amplifier |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |