CN215954037U - On-chip light source modulation system - Google Patents
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- CN215954037U CN215954037U CN202122182753.7U CN202122182753U CN215954037U CN 215954037 U CN215954037 U CN 215954037U CN 202122182753 U CN202122182753 U CN 202122182753U CN 215954037 U CN215954037 U CN 215954037U
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Abstract
The utility model discloses an on-chip light source modulation system, comprising: the silicon nitride layer comprises a first waveguide, a second waveguide, a silicon substrate, a silicon dioxide buried oxide layer and a silicon nitride layer, wherein the first waveguide, the second waveguide and the third waveguide are sequentially arranged; a micro-ring filter is arranged between the second waveguide and the third waveguide, the distance between the micro-ring filter and the second waveguide is a third set distance, and the distance between the micro-ring filter and the third waveguide is a fourth set distance; a micro-ring modulator is arranged between the third waveguide and the fourth waveguide, the distance between the micro-ring modulator and the third waveguide is a fifth set distance, and the distance between the micro-ring modulator and the fourth waveguide is a sixth set distance. The system utilizes three silicon nitride micro-ring structures to process an input light source, and can generate an optical frequency comb with wider free spectral range.
Description
Technical Field
The utility model relates to the technical field of microwave photonics, in particular to an on-chip light source modulation system.
Background
In the prior art, an optical frequency comb is usually obtained by using a mode-locked laser, for example, chinese patent application with publication number CN108923250A proposes an on-chip integrated fourier mode-locked laser, which includes a semiconductor optical amplifier, a microwave photonic micro-ring filter, a beam splitter, an optical isolator and an on-chip integrated optical delay line, which together form an optical loop to generate optical resonance, thereby obtaining the optical frequency comb.
The optical frequency comb obtained by the mode-locked laser has the advantages that monolithic integration can be realized, and the optical frequency comb has the defects that the optical frequency comb has narrow spectral width which can reach dozens of nm, and the comb teeth are spaced at intervals of dozens of to dozens of GHz; in addition, the loss of the resonant cavity of the mode-locked laser is large, so that the phase noise is not ideal, and therefore the pulse quality of the obtained optical frequency comb is poor, and the phase noise is poor.
SUMMERY OF THE UTILITY MODEL
Therefore, it is necessary to provide an on-chip light source modulation system to solve the problem of narrow spectral width of an optical frequency comb obtained by using a mode-locked laser in the prior art.
In accordance with the above object, an on-chip light source modulation system includes:
the silicon substrate 120, the silicon dioxide buried oxide layer 110 and the silicon nitride layer 100, wherein the silicon dioxide buried oxide layer 110 is arranged on the upper surface of the silicon substrate 120, and the silicon nitride layer 100 is arranged on the upper surface of the silicon dioxide buried oxide layer 110;
the silicon nitride layer 100 includes: the micro-ring resonator is characterized by comprising a silicon nitride first waveguide 2, a silicon nitride second waveguide 4, a silicon nitride third waveguide 6 and a silicon nitride fourth waveguide 10 which are sequentially arranged, wherein a micro-ring resonator 3 is arranged between the silicon nitride first waveguide 2 and the silicon nitride second waveguide 4, the distance between the micro-ring resonator 3 and the silicon nitride first waveguide 2 is a first set distance, and the distance between the micro-ring resonator 3 and the silicon nitride second waveguide 4 is a second set distance;
a micro-ring filter 5 is arranged between the silicon nitride second waveguide 4 and the silicon nitride third waveguide 6, the distance between the micro-ring filter 5 and the silicon nitride second waveguide 4 is a third set distance, and the distance between the micro-ring filter 5 and the silicon nitride third waveguide 6 is a fourth set distance;
a micro-ring modulator 7 is arranged between the silicon nitride third waveguide 6 and the silicon nitride fourth waveguide 10, the distance between the micro-ring modulator 7 and the silicon nitride third waveguide 6 is a fifth set distance, and the distance between the micro-ring modulator 7 and the silicon nitride fourth waveguide 10 is a sixth set distance; the micro-ring resonant cavity 3, the micro-ring filter 5 and the micro-ring modulator 7 all adopt a silicon nitride micro-ring structure.
Preferably, the micro-ring modulator 7 is provided with a first electrode 8 and a second electrode 9, the first electrode 8 is used for connecting with a positive electrode of a power supply, and the second electrode 9 is used for connecting with a negative electrode of the power supply.
Preferably, the first setting distance, the second setting distance, the third setting distance, the fourth setting distance, the fifth setting distance and the sixth setting distance are all setting values, and the setting range of each setting distance is 300-700 nm.
Preferably, the heights of the silicon nitride first waveguide 2, the silicon nitride second waveguide 4, the silicon nitride third waveguide 6, the silicon nitride fourth waveguide 10, the micro-ring resonant cavity 3, the micro-ring filter 5 and the micro-ring modulator 7 are the same.
Preferably, the height of the silicon substrate 120 is greater than the height of the silicon dioxide buried oxide layer 110, and the height of the silicon dioxide buried oxide layer 110 is greater than the height of the silicon nitride layer 100.
Preferably, the height of each component in the silicon nitride layer 100 is in the range of 0.3-1.5 μm.
Preferably, the height of the silicon substrate 120 is 600 μm.
Preferably, the height of the silicon dioxide buried oxide layer 110 is in the range of 2-3 μm.
Preferably, the power voltage applied between the first electrode 8 and the second electrode 9 of the micro-ring modulator 7 is in the range of 0-30V.
Preferably, the radii of the micro-ring modulator 7 and the micro-ring filter 5 are equal, and the radius of the micro-ring resonant cavity 3 is larger than the radius of the micro-ring filter 5.
The three silicon nitride micro-ring structures and the four silicon nitride waveguides form the silicon nitride layer which is arranged on the upper surface of the silicon dioxide buried oxide layer, and the three silicon nitride micro-ring structures are used for processing the input light source, so that the optical frequency comb with wider free spectral range can be generated, and the wavelength as much as possible and the light intensity with proper size can be obtained. In addition, the system realizes higher modulation speed and higher efficiency through photoelectric modulation.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments of the present invention will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without inventive labor.
FIG. 1 is a side view of a structure of an on-chip light source modulation system provided in embodiment 1 of the present invention;
FIG. 2 shows n in the on-chip light source modulation system provided in embodiment 1 of the present invention1A top view of the layer structure;
FIG. 3 shows n in the on-chip light source modulation system provided in embodiment 2 of the present invention1A top view of the layer structure;
the symbols are as follows:
100. a silicon nitride layer; 110. a silicon dioxide buried oxide layer; 120. a silicon substrate; 1. a light source; 2. a silicon nitride first waveguide; 3. a micro-ring resonant cavity; 4. a silicon nitride second waveguide; 5. a micro-loop filter; 6. a silicon nitride third waveguide; 7. a micro-ring modulator; 8. a first electrode; 9. a second electrode; 10. a silicon nitride fourth waveguide.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1:
the system for modulating the light source on the chip shown in FIG. 1 is mainly divided into three layers, n from bottom to top3Layer n2Layer n1Layer of which n3Layer is silicon substrate 120, n2The layer is a silicon dioxide buried oxide layer 110, n1The layer is a silicon nitride layer 100, the height of the silicon substrate 120 is greater than that of the silicon dioxide buried oxide layer 110, and the height of the silicon dioxide buried oxide layer 110 is greater than that of the silicon nitride layer 100.
The structure of the silicon nitride layer 100 is shown in fig. 2, and mainly includes a micro-ring resonator 3, a micro-ring filter 5, a micro-ring modulator 7, and a plurality of waveguides, wherein the radii of the micro-ring modulator 7 and the micro-ring filter 5 are equal, and the radius of the micro-ring resonator 3 is greater than the radius of the micro-ring filter 5. The specific positional relationship between the components in the silicon nitride layer 100 is:
the silicon nitride layer 100 comprises a silicon nitride first waveguide 2, a silicon nitride second waveguide 4, a silicon nitride third waveguide 6 and a silicon nitride fourth waveguide 10 which are sequentially arranged, a micro-ring resonant cavity 3 is arranged between the silicon nitride first waveguide 2 and the silicon nitride second waveguide 4, the distance between the micro-ring resonant cavity 3 and the silicon nitride first waveguide 2 is a first set distance, and the distance between the micro-ring resonant cavity 3 and the silicon nitride second waveguide 4 is a second set distance.
A micro-ring filter 5 is arranged between the silicon nitride second waveguide 4 and the silicon nitride third waveguide 6, the distance between the micro-ring filter 5 and the silicon nitride second waveguide 4 is a third set distance, and the distance between the micro-ring filter 5 and the silicon nitride third waveguide 6 is a fourth set distance.
A micro-ring modulator 7 is arranged between the silicon nitride third waveguide 6 and the silicon nitride fourth waveguide 10, the distance between the micro-ring modulator 7 and the silicon nitride third waveguide 6 is a fifth set distance, and the distance between the micro-ring modulator 7 and the silicon nitride fourth waveguide 10 is a sixth set distance. And, the micro-ring modulator 7 is provided with a first electrode 8 and a second electrode 9, the first electrode 8 is used for connecting with the positive pole of the power supply, and the second electrode 9 is used for connecting with the negative pole of the power supply.
In the system, the first setting distance, the second setting distance, the third setting distance, the fourth setting distance, the fifth setting distance and the sixth setting distance are all set values, and the setting range of each setting distance is 300-700 nm. When each set distance is determined, it can be selected within the set range as needed. In the present embodiment, the first to sixth setting distances are all the same setting values, but as another embodiment, the first to sixth setting distances may be different setting values, or the first and second setting distances may be the same setting values L1, the third and fourth setting distances may be the same setting values L2, the fifth and sixth setting distances may be the same setting values L3, and L1 ≠ L2 ≠ L3.
In the system, all the components (i.e., each waveguide, micro-ring resonator, micro-ring filter, and micro-ring modulator) in the silicon nitride layer 100 are made of silicon nitride, and the heights of all the waveguides, the micro-ring resonator 3, the micro-ring filter 5, and the micro-ring modulator 7 are all the same, and the height range of each component in the silicon nitride layer 100 is 0.3-1.5 μm. Also, in the present system, the thickness of the silicon substrate 120 (i.e., n in FIG. 1)3Height of layer) is 600 μm, and the thickness of the silicon dioxide buried oxide layer 110 (i.e., n in fig. 1)2Layer height) is in the range of 2-3 μm, i.e., the thickness of the silicon substrate 120 is greater than the thickness of the silicon dioxide buried oxide layer 110, and the thickness of the silicon dioxide buried oxide layer 110 is greater than the thickness of the silicon nitride layer 100 (i.e., the height of the silicon nitride layer 100).
In this system, the light source 1 is preferably a narrow-line-width tunable laser whose output center wavelength is set to visible light (mainly 500 nm), near infrared light (mainly 1550 nm), and mid-infrared light (mainly 2800 nm).
The working principle of the system is as follows:
a light source 1 enters a silicon nitride first waveguide 2 through end face coupling and enters a micro-ring resonant cavity 3 through evanescent field coupling, the micro-ring resonant cavity 3 is used for generating an optical frequency comb according to the three-order nonlinear optical effect of silicon nitride, mainly degenerate four-wave mixing, and then the optical frequency comb generated in the micro-ring resonant cavity 3 is coupled into a silicon nitride second waveguide 4 through the evanescent field coupling mode; the silicon nitride second waveguide 4 transmits the optical frequency comb, the optical frequency comb enters the micro-ring filter 5 in an evanescent field coupling mode, the micro-ring filter 5 is used for filtering the light transmitted from the silicon nitride second waveguide 4 to obtain a series of light with specific resonant wavelength, and the light with the rest wavelengths is filtered.
The light output by the micro-ring filter 5 enters a silicon nitride third waveguide 6 in an evanescent field coupling mode, the silicon nitride third waveguide 6 is used for transmitting the light output by the micro-ring filter 5 and coupling the light into a micro-ring modulator 7, the micro-ring modulator 7 is used for changing the resonant wavelength of the light in a ring to modulate the intensity of the light, and finally, the light modulated by the micro-ring modulator 7 is output by a silicon nitride fourth waveguide 10.
In the system, the micro-ring modulator 7 also adopts a micro-ring structure, the size of the micro-ring modulator 7 is equal to that of the micro-ring filter 5, and when the micro-ring modulator 7 is powered on or not powered on, the action of the micro-ring modulator 7 is different. In particular, the function of the micro-ring modulator 7 is illustrated in the following cases:
in the case where both electrodes of the micro-ring modulator 7 are not energized, the micro-ring modulator 7 functions as the micro-ring filter 5, both for achieving resonance at a certain wavelength, and when the size of the micro-ring modulator 7 and the size of the micro-ring filter 5 are equal, the resonance wavelengths in the micro-ring modulator 7 and the micro-ring filter 5 are equal.
In the second case, in the case of electrical modulation of both electrodes of the micro-ring modulator 7, the resonance wavelength within the micro-ring can be changed. The specific implementation method comprises the following steps: the resonance wavelength in the micro-ring modulator 7 is changed by applying different voltages to the first electrode 8 and the second electrode 9 of the micro-ring modulator 7, so as to modulate the intensity of light in the micro-ring. In the present embodiment, the voltage applied to the first electrode 8 and the second electrode 9 of the micro-ring modulator 7 is in the range of 0 to 30V, preferably 0 to 5V.
The light modulation method by using the system comprises the following steps: the narrow-linewidth laser with the central wavelength of visible light (mainly 500 nm), near infrared light (mainly 1550 nm) and intermediate infrared light (mainly 2800 nm) is respectively input at the input end of the system (namely one end of the silicon nitride first waveguide 2) through the narrow-linewidth laser, and passes through the micro-ring resonant cavity 3 in the system, so that the whole system realizes the optical frequency comb with the wavelength range of 500-3000 nm. The optical frequency comb passes through the micro-ring filter 5, only light with specific wavelength can be reserved in the ring resonance, then the light enters the micro-ring modulator 7 through evanescent field coupling, the size of the micro-ring modulator 7 is equal to that of the micro-ring filter, so the resonance with the same wavelength can be realized under the condition of no power supply, the light intensity of the output end of the system is strongest, when different voltages are added for modulation, the resonance wavelength in the micro-ring can be changed, the intensity of the light is changed, when the resonance wavelength is completely shifted, the light intensity of the output end of the system is zero, and the intensity of the light received by the output end of the system can be changed along with the change of modulation voltage.
In the system, although the micro-ring resonator, the micro-ring filter and the micro-ring modulator are structurally silicon nitride micro-ring structures, the functions of the three silicon nitride micro-ring structures are different in the combination mode due to the combination mode of the three silicon nitride micro-ring structures adopted in the system.
Specifically, the micro-ring resonant cavity utilizes the third-order nonlinear effect of silicon nitride materials, mainly degenerates four-wave mixing to excite an optical frequency comb with equal frequency intervals; the micro-ring filter utilizes the filtering function of the micro-ring, and only the light frequency meeting the resonance condition can be reserved in the micro-ring.
Because the light intensity input into the micro-ring resonant cavity is strong, the third-order nonlinear effect of the silicon nitride material can be utilized, mainly degenerate four-wave mixing is utilized to excite new frequency components, but the light intensity transmitted to the micro-ring filter is weak, and the third-order nonlinear effect of the silicon nitride material cannot be utilized to excite the new frequency components, so that the light with new frequency cannot be generated in the micro-ring filter. Under the condition that the light intensity output by the micro-ring filter is not enough, the purpose of increasing the light intensity is achieved under the condition that different voltages are applied to two electrodes of the micro-ring modulator.
The on-chip light source modulation system has the following advantages:
(1) the optical frequency combs with the input wavelengths of visible light (mainly 500 nm), near infrared light (mainly 1550 nm) and intermediate infrared light (mainly 2800 nm) can be changed, so that the light in the visible to intermediate infrared wave bands can be modulated, and the modulation range is wide.
(2) The three silicon nitride micro-ring structures are utilized to process the input light source, so that the optical frequency comb with wider free spectral range can be generated, and the wavelength as much as possible and the light intensity with proper size can be obtained. In addition, the system is modulated by photoelectricity, and the modulation speed is higher and the efficiency is higher.
(3) The system is integrated on a silicon-based chip, is easy to produce in large scale in actual manufacturing, and has the advantages of small volume and high flexibility.
Example 2:
this embodiment proposes an on-chip light source modulation system, as shown in fig. 3, which is different from the light source modulation system shown in fig. 2 in embodiment 1 in that the micro-ring resonator 3 in fig. 2 is located on the left side of the silicon nitride second waveguide 4, the resonator filter 5 is located on the right side of the silicon nitride second waveguide 4 and the silicon nitride third waveguide 6, and the resonator modulator 7 is located on the left side of the silicon nitride third waveguide 6 and the silicon nitride fourth waveguide 10.
In the present embodiment, the micro-ring resonator 3 is located on the right side of the silicon nitride second waveguide 4, the resonator filter 5 is located on the left side of the silicon nitride second waveguide 4 and the silicon nitride third waveguide 6, and the resonator modulator 7 is located on the right side of the silicon nitride third waveguide 6 and the silicon nitride fourth waveguide 10.
In the present system, the silicon nitride first waveguide 2 is still a curved waveguide, and as another embodiment, a straight waveguide may be used as the silicon nitride first waveguide 2.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present invention, and are intended to be included within the scope of the present invention.
Claims (10)
1. An on-chip light source modulation system, comprising: the silicon substrate (120), the silicon dioxide buried oxide layer (110) and the silicon nitride layer (100), wherein the silicon dioxide buried oxide layer (110) is arranged on the upper surface of the silicon substrate (120), and the silicon nitride layer (100) is arranged on the upper surface of the silicon dioxide buried oxide layer (110);
the silicon nitride layer (100) comprises: the micro-ring resonator is characterized by comprising a silicon nitride first waveguide (2), a silicon nitride second waveguide (4), a silicon nitride third waveguide (6) and a silicon nitride fourth waveguide (10) which are sequentially arranged, wherein a micro-ring resonator (3) is arranged between the silicon nitride first waveguide (2) and the silicon nitride second waveguide (4), the distance between the micro-ring resonator (3) and the silicon nitride first waveguide (2) is a first set distance, and the distance between the micro-ring resonator (3) and the silicon nitride second waveguide (4) is a second set distance;
a micro-ring filter (5) is arranged between the silicon nitride second waveguide (4) and the silicon nitride third waveguide (6), the distance between the micro-ring filter (5) and the silicon nitride second waveguide (4) is a third set distance, and the distance between the micro-ring filter (5) and the silicon nitride third waveguide (6) is a fourth set distance;
a micro-ring modulator (7) is arranged between the silicon nitride third waveguide (6) and the silicon nitride fourth waveguide (10), the distance between the micro-ring modulator (7) and the silicon nitride third waveguide (6) is a fifth set distance, and the distance between the micro-ring modulator (7) and the silicon nitride fourth waveguide (10) is a sixth set distance; the micro-ring resonant cavity (3), the micro-ring filter (5) and the micro-ring modulator (7) are all of silicon nitride micro-ring structures.
2. The system of claim 1, wherein the micro-ring modulator (7) is provided with a first electrode (8) and a second electrode (9), the first electrode (8) is used for connecting with a positive power supply, and the second electrode (9) is used for connecting with a negative power supply.
3. The system as claimed in claim 1, wherein the first set distance, the second set distance, the third set distance, the fourth set distance, the fifth set distance, and the sixth set distance are all set values, and the set range of each set distance is 300 nm and 700 nm.
4. The system according to claim 1, wherein the heights of the silicon nitride first waveguide (2), the silicon nitride second waveguide (4), the silicon nitride third waveguide (6), the silicon nitride fourth waveguide (10), the micro-ring resonator (3), the micro-ring filter (5) and the micro-ring modulator (7) are the same.
5. The system of claim 1, wherein the silicon substrate (120) has a height greater than a height of the silicon dioxide buried oxide layer (110), and wherein the silicon dioxide buried oxide layer (110) has a height greater than a height of the silicon nitride layer (100).
6. An on-chip light source modulation system according to claim 1, 4 or 5, wherein the height of the features in the silicon nitride layer (100) is in the range of 0.3-1.5 μm.
7. An on-chip light source modulation system according to claim 1 or 5, wherein the height of the silicon substrate (120) is 600 μm.
8. An on-chip light source modulation system according to claim 1 or 5, characterized in that the height of the silicon dioxide buried oxide layer (110) is in the range of 2-3 μm.
9. The system of claim 2, wherein the supply voltage applied between the first electrode (8) and the second electrode (9) on the micro-ring modulator (7) is in the range of 0 to 30V.
10. An on-chip light source modulation system according to claim 1, characterized in that the radius of the micro-ring modulator (7) and the micro-ring filter (5) are equal, and the radius of the micro-ring resonator (3) is larger than the radius of the micro-ring filter (5).
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| CN113820902A (en) * | 2021-09-09 | 2021-12-21 | 深圳大学 | On-chip light source modulation system |
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| CN113820902A (en) * | 2021-09-09 | 2021-12-21 | 深圳大学 | On-chip light source modulation system |
| CN113820902B (en) * | 2021-09-09 | 2024-04-05 | 深圳大学 | On-chip light source modulation system |
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