CN215931623U - Photoelectric material and device characterization system - Google Patents
Photoelectric material and device characterization system Download PDFInfo
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- CN215931623U CN215931623U CN202121734012.9U CN202121734012U CN215931623U CN 215931623 U CN215931623 U CN 215931623U CN 202121734012 U CN202121734012 U CN 202121734012U CN 215931623 U CN215931623 U CN 215931623U
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Abstract
The embodiment of the present disclosure provides a photoelectric material and device characterization system, including: a laser emitting assembly for emitting light of a predetermined wavelength for use as the aging light and the probe light; a first light-transmitting device group for transmitting light of a predetermined wavelength; the microscopic observation mirror is used for transmitting the light from the first light-transmitting device group to the object to be detected and observing the aging degree of the object to be detected; the external driving and measuring circuit is used for applying voltage to the body to be measured so as to realize electro-optic conversion, and transmitting an optical signal subjected to the electro-optic conversion to the second optical transmitter group through the microscope; the second light-transmitting device group is used for transmitting the light signals subjected to the electro-optical conversion to the first detector; and the first detector is used for analyzing the optical signals from the second optical transmitter set to obtain an EL signal and a PL signal of the object to be detected. The system of the embodiment of the disclosure has simple composition, stronger guidance effect on device improvement and higher aging speed.
Description
Technical Field
The present disclosure relates to the field of optoelectronics, and more particularly, to a system for characterizing an optoelectric material and a device.
Background
The working principle of the light-emitting diode is that two carriers of electron holes are injected from two ends of the diode through external voltage, the electron holes meet at a light-emitting layer, and light emission is generated through radiation recombination. The light-emitting process mechanism of the light-emitting diode and the monitoring of the injection condition of the charge holes are very important for improving the structure and the performance of the device.
The small signal (i.e. the detection light path signal) Photoluminescence (PL) in-situ monitoring function can provide the condition that the luminous capacity of the light emitting layer changes along with the change of external conditions (bias voltage, time, etc.). Particularly for monitoring the operational lifetime of the device, some useful information may be given to some extent.
However, the drawback of this technique is that the measurement is single, and only a single PL signal profile over time can be obtained. However, there are various reasons for PL signal attenuation of the light emitting layer, and it is impossible to distinguish whether the quantum dot itself or the interface or the adjacent layer causes light emission attenuation, and there is only a guiding role for the device improvement; moreover, the brightness used for attenuation of the conventional device is generally required for measurement, and the measurement time is relatively long.
SUMMERY OF THE UTILITY MODEL
In view of this, the embodiments of the present disclosure provide a system for characterizing an optoelectronic material and a device, so as to solve the following problems in the prior art: the measurement means is single, only a single PL signal change curve along with time can be obtained, and the method only has a weak guiding function on device improvement; moreover, the brightness used for attenuation of the conventional device is generally required for measurement, and the measurement time is relatively long.
In one aspect, an embodiment of the present disclosure provides a system for characterizing an optoelectronic material and a device, including: a laser emitting assembly for emitting light of a predetermined wavelength as aging light and probe light; a first light-transmitting device group for transmitting light of the predetermined wavelength; the microscopic observation mirror is used for transmitting the light from the first light-transmitting device group to the object to be measured and observing the aging degree of the object to be measured; the external driving and measuring circuit is used for applying voltage to the body to be measured so as to realize electro-optic conversion, and transmitting the optical signal after the electro-optic conversion to the second optical transmission device group through the microscope; the second optical transmitter set is used for transmitting the optical signal after the electro-optical conversion to the first detector; the first detector is used for analyzing the optical signals from the second optical transmitter set to obtain an Electroluminescence (EL) signal and a PL signal of the object to be detected.
In some embodiments, the laser emitting assembly comprises: the first laser is used for emitting a first optical signal with a first preset wavelength, and the first optical signal is used as probe light; and the second laser is used for emitting a second optical signal with a second preset wavelength, and the second optical signal is used as aging light.
In some embodiments, further comprising: the chopper is used for processing the first optical signal into an alternating current optical signal; the beam splitter splits the alternating current optical signal into a first alternating current optical signal and a second alternating current optical signal, transmits the first alternating current optical signal to the first optical transmission device group, and transmits the second alternating current optical signal to the second detector; the second detector is used for receiving the second alternating current optical signal.
In some embodiments, further comprising: and the phase-locked amplifier is used for receiving the optical signals of the second detector and the first detector and obtaining a corrected PL signal according to the optical signals.
In some embodiments, further comprising: a beam combiner coupled to the second laser and coupled to the beam splitter.
In some embodiments, the first optical signal is processed by the chopper and the beam splitter and then input into the first optical transmission component group; the second optical signal is directly input into the transmission optical path of the first optical conduction component group.
In some embodiments, further comprising: a third laser for emitting a third optical signal of a third predetermined wavelength as the activation light.
In some embodiments, further comprising: and the camera component is used for acquiring and displaying image data and adjusting material alignment.
In some embodiments, the first light-transmitting device group includes at least: a mirror and a mirror.
In some embodiments, the second light-transmitting device group includes at least: filter mirrors and turning mirrors.
The laser emitting assembly is arranged, the laser emitting assembly can emit the superposed light of the aging light and the detection light, the superposed light acts on a body to be detected through the first light conduction device group and the microscopic observation mirror, the external drive measuring circuit is combined with a light signal obtained by pressurizing the body to be detected, the light signal is obtained by the first detector through the first light conduction device group and the microscopic observation mirror, an EL signal and a PL signal of the body to be detected can be obtained simultaneously, the system is simple in composition, the EL signal and the PL signal can be measured simultaneously, the device improvement guiding effect is strong, special aging light is provided, and the aging speed is fast.
Drawings
In order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, it is obvious that the drawings in the following description are only some embodiments described in the present disclosure, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a first schematic structural diagram of a photovoltaic material and device characterization system provided in an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram ii of an optoelectronic material and device characterization system provided in the embodiment of the present disclosure;
fig. 3 is a schematic structural diagram three of an optoelectronic material and device characterization system provided in the embodiments of the present disclosure;
fig. 4 is a fourth schematic structural diagram of a photovoltaic material and device characterization system provided in the embodiments of the present disclosure.
Reference numerals:
1-a laser emission assembly, 2-a first light-conducting device group, 3-a microscopic observation mirror, 4-an external drive and measurement circuit, 5-a second light-conducting device group, 6-a first detector, 7-a beam combiner, 81-a chopper, 82-a beam splitter, 9-a second detector, 10-a camera assembly, 11-a first laser, 12-a second laser, 13-a third laser, 14-a phase-locked amplifier, 21-a reflective mirror, 22-a transflective mirror, 51-a filter, 52-a rotating mirror.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present disclosure more clear, the technical solutions of the embodiments of the present disclosure will be described below clearly and completely with reference to the accompanying drawings of the embodiments of the present disclosure. It is to be understood that the described embodiments are only a few embodiments of the present disclosure, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the disclosure without any inventive step, are within the scope of protection of the disclosure.
Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The use of "first," "second," and similar terms in this disclosure is not intended to indicate any order, quantity, or importance, but rather is used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
To maintain the following description of the embodiments of the present disclosure clear and concise, a detailed description of known functions and known components have been omitted from the present disclosure.
The embodiment of the present disclosure provides a photoelectric material and device characterization system, a structural schematic of the system is shown in fig. 1, and the system includes:
a laser emitting module 1 for emitting light of a predetermined wavelength as aging light and probe light; a first light-transmitting device group 2 for transmitting light of a predetermined wavelength; a microscopic observation mirror 3 for transmitting the light from the first light-transmitting device group to the object to be measured and observing the degree of aging of the object to be measured; the external driving and measuring circuit 4 is used for applying voltage to the body to be measured so as to realize electro-optic conversion, and transmitting an optical signal after the electro-optic conversion to the second optical transmitter group through the microscope; the second light-transmitting device group 5 is used for transmitting the light signals after the electro-optical conversion to the first detector; and a first detector 6 for analyzing the light signal from the second light-transmitting device group to obtain an EL signal and a PL signal of the object to be measured.
The first light-transmitting device group 2, the microscopic observation mirror 3 and the second light-transmitting device group 5 are all microscopic light paths of the microscopic device, for the sake of clarity, in the embodiment of the present disclosure, the light paths of the microscopic device are split into the above three parts, and when a person skilled in the art uses the existing devices directly, the three parts are the microscopes, and the microscopic observation mirror is the microscope objective.
Of course, the microscopy apparatus may also include other components, such as a camera assembly 10 for acquiring and displaying image data, may also be provided in the optoelectronic material and device characterization system of the present disclosure to guide the user in adjusting the position of the optoelectronic material and device based on the image data.
The laser emitting assembly is arranged, the laser emitting assembly can emit the superposed light of the aging light and the detection light, the superposed light acts on a body to be detected through the first light conduction device group and the microscopic observation mirror, the external drive measuring circuit is combined with a light signal obtained by pressurizing the body to be detected, the light signal is obtained by the first detector through the first light conduction device group and the microscopic observation mirror, an EL signal and a PL signal of the body to be detected can be obtained simultaneously, the system is simple in composition, the EL signal and the PL signal can be measured simultaneously, the device improvement guiding effect is strong, special aging light is provided, and the aging speed is fast.
When analyzing the EL signal and the PL signal of the first detector, a dc meter may be used to measure the EL signal and the PL signal, and of course, if the first detector itself has an analyzing function, the EL signal and the PL signal may be obtained at any time according to the user's requirement, and the EL signal and the PL signal obtained from the first detector are values at a certain time.
In order to obtain a corrected PL signal, the optoelectronic material and device characterization system of the embodiment of the present disclosure may further include a chopper 81, a beam splitter 82, and a second detector 9, where the chopper 81 is configured to process the first optical signal into an ac optical signal; the beam splitter 82 splits the alternating current optical signal into a first alternating current optical signal and a second alternating current optical signal, transmits the first alternating current optical signal to the first optical transmitter group, and transmits the second alternating current optical signal to the second detector; and a second detector 9 for receiving the second alternating current optical signal.
If the PL signal acquired by the second detector is weak, a phase-locked amplifier 14 may be arranged to acquire a strong PL signal, and therefore, the optoelectronic material and device characterization system according to the embodiment of the present disclosure may further include a phase-locked amplifier, which is configured to receive optical signals of the second detector and the first detector, and obtain a corrected PL signal according to the optical signals. For the lock-in amplifier, the data read out is a data set relative to the dc meter, i.e. a data set obtained by reading out a waveform.
In a specific implementation, the first optical transmitter set includes at least a reflective mirror 21 and a transflective mirror 22, and the second optical transmitter set includes at least a filter 51 and a turning mirror 52. Of course, those skilled in the art may also add or reduce transmission devices in the display optical path according to actual requirements, which are within the protection scope of the embodiments of the present disclosure and will not be described herein again.
In specific implementation, if the laser emitting component is a laser, an electrical drive modulated by a certain frequency signal is adopted for driving the laser emitting component, a direct current component of a driving signal can be directly used as an aging signal, an alternating current signal can be used as a detection signal, and namely, one laser plays roles of aging and detecting at the same time. This approach has the advantages of low cost and high integration, but may have limitations in wavelength selection, energy range, measurement accuracy, etc.
The light with the predetermined wavelength may be superimposed light of aging light and probe light which are electrically modulated (a direct current component and an alternating current component are from one laser, and certainly, the direct current component and the alternating current component can also be from two lasers respectively), and of course, the light with the predetermined wavelength may also be light which is not electrically modulated, that is, only one laser of a laser emitting component is insufficient, and the laser emitting component needs to be provided with two lasers, and then one laser emits the aging light to realize an aging light path, and one laser emits the probe light to realize a probe light path. Therefore, the above laser emitting assembly includes a first laser 11 and a second laser 12; the first laser 11 is configured to emit a first optical signal with a first predetermined wavelength, and the first optical signal is used as probe light; the second laser 12 is arranged to emit a second optical signal at a second predetermined wavelength, the second optical signal being the aged light. In this case, the user only needs to adjust the wavelength of the optical signal to adjust the optical function.
If the aging light and the detection light are respectively input into the first light conduction component group 2, the first laser 11 transmits a first light signal which is processed by the chopper 81 and the beam splitter 82 and then input into the first light conduction component group 2; and a second laser 12 for emitting a second optical signal to the transmission optical path in the first optical transmission component group 2. The above system configuration may be schematically illustrated in fig. 2.
If both the probe light and the aging light are input to the first optical transmission component group 2, the above system configuration can be schematically shown in fig. 3, and it is also necessary to include a beam combiner 7, the beam combiner 7 being coupled to the second laser 12 and to the beam splitter 82.
Of course, other lasers may be added to the laser emitting assembly to add different optical function requirements. For example, as shown in fig. 4, a third laser 13 for emitting a third optical signal with a third predetermined wavelength is added to use the third optical signal as the activation light to realize an activation light path and activate the trap state in the device, so that the trap depth, density, influence of the trap on the aging condition, and the like can be determined.
The above-described scheme is explained below with reference to specific examples.
The disclosed embodiments provide a photovoltaic material and device characterization system for determining the reliability of photovoltaic materials and devices, which greatly enhances the capability of a commonly used EL-PL small signal system by introducing an optically aged optical path.
The detection light path corresponding to the first laser is chopped into alternating current light signals through a chopper, then one beam of the alternating current light signals is distributed to the second detector through the beam splitter to monitor the light intensity of the detection light path, the other beam of the alternating current light signals and the aging light path are mixed together to enter the microscope device, and a sample is excited through focusing. The light emitted by the sample is collected and sent to a first detector, the first detector is simultaneously connected with a direct current meter and a phase-locked amplifier, the direct current meter is used for measuring the evolution of the sum of EL + PL signals along with time, the phase-locked amplifier is used for taking out the PL signals, and the PL signals are divided by the signals of a second detector to obtain the accurate evolution of the PL signals along with time.
In the implementation, the collocation of the light path has certain flexibility, and a plurality of light paths can be combined and then introduced into the microscopic device, or can be respectively introduced into the microscopic device and then combined. The system can also be matched with an activation light path, an infrared or wide-spectrum light source is adopted to activate the defect state or the local state of the luminescent material or the device, and the influence of the states on the performance of the material or the device is researched.
Regarding system parameter configuration:
first laser tuning range: 0-20W, and the wavelength range is ultraviolet or visible light;
second laser tuning range: 0-20W, and the wavelength range is ultraviolet or visible light;
third laser tuning range: 0-20W, the wavelength can be independent or continuous, and the wavelength range is from visible light to infrared;
frequency range of the lock-in amplifier: 0-1 MHz;
microscope objective lens: according to the change of the requirement, the focusing light spot diameter can be reduced to 0.5 μm-1 cm.
The scheme of using the system is described with reference to specific examples.
Example 1 (Material stability measurement)
The samples were: red quantum dots, green quantum dots, or blue quantum dots.
Example 2 (measurement of lamination stability)
The samples were: red quantum dot/TFB stacks.
Example 3 (Small Signal PL-EL measurement)
The samples were: red light QLED ITO/PEDOT PSS/TFB/RQD/ZnO/Al, device area 2 x 2mm2。
The drive current is 5mA, the power of the first laser adopts 1mW and 532nm, and the focusing diameter is 3mm (0.025W/cm)2) The PL decay of the light emitting layer of the device over time is monitored by measuring the drop in the signal correcting for PL.
Example 4 (Large Signal + Small Signal PL-EL measurement)
The samples were: red light QLED ITO/PEDOT PSS/TFB/RQD/ZnO/Al, device area 2 x 2mm2。
The drive current is 5mA, the power of the first laser is 1mW, the power of the 532nm second laser is 4W 532nm, the focusing diameter is 2mm (0.025W/cm)2 100W/cm2) The second laser can be turned off when sampling the dc EL + PL signal to obtain a more accurate EL signal intensity by measuring the drop in the signal correcting for PL to measure the PL signal attenuation of the material.
Example 5 (factorization of degradation of electrical characteristics of device)
The samples were: red light QLED ITO/PEDOT PSS/TFB/RQD/ZnO/Al, device area 2 x 2mm2。
The driving current is 0.2mA, the focusing diameter of the second laser is 3mm by adopting 4W 532nm, the voltage of an external circuit is monitored, and the influence of RQD excited aging on the electric driving voltage of the device is researched. Alternatively, the second laser was used with a 365nm focal diameter of 3mm to study the effect of TFB layer aging on the electrical drive voltage during.
Example 6 (investigation of the recovery of charged states by auto-ionization in Quantum dots)
The samples were: red quantum dot film.
The wavelength is 532nm, the power of the first laser is 10mW, the power of the second laser is 1W, and the focusing diameter is 1mm (100W/cm)2) Measuring the PL decay of the material by measuring the drop in the signal that corrects for PL; the third laser was turned on and the difference in the attenuation of the PL signal in the on state was observed.
EXAMPLE 7 (aging and probing functions are performed simultaneously with one laser)
The samples were: red quantum dot film.
Only one laser is controlled, the wavelength is 532nm, and a driving signal of superposed direct current +200Hz alternating current is adopted. The power output of the DC is 10W, the AC signal is 100mW, and the focusing diameter is 1mm (the average energy density is 100W/cm)2)。
The decay of the phase-locked signal was used to observe the decay of the relative luminous efficiency of the material.
The photoelectric material and device characterization system of the embodiment of the disclosure introduces an aging light path, the aging light path enables materials (luminescent materials, HTL, ETL) and laminates (such as luminescent materials/HTL, luminescent materials/ETL, HTL/luminescent materials/ETL) to be measured in the same device, and the attenuation trend of a plurality of groups of experiments is compared, so that the reason of luminescent layer degradation can be obtained more clearly; the introduction of the aging light path can improve the brightness to hundreds of thousands of nits (brightness units), which is a guidance scheme that the existing QLED device can not achieve brightness, so that iteration can be accelerated, and the next optimization of the device can be obtained more quickly.
The aging light path can definitely fix the position of an aging source on the light emitting layer or the HTL layer (by adjusting the wavelength of aging laser), so that the deviation of mechanism representation caused by factors such as electric leakage and the like due to imperfect device preparation is weakened to a certain extent.
Separating the aging optical path from the detection optical path can reduce the requirements for the laser. The aging laser requires a relatively high power, with stability of 5%, while the detection laser requires a relatively low power, with relatively high stability (1% or better).
By aging different positions in the device and monitoring various parameters by using a driving circuit of an external QLED, the influence of aging in different areas on the electrical characteristics of the device can be known.
Moreover, although exemplary embodiments have been described herein, the scope thereof includes any and all embodiments based on the disclosure with equivalent elements, modifications, omissions, combinations (e.g., of various embodiments across), adaptations or alterations. The elements of the claims are to be interpreted broadly based on the language employed in the claims and not limited to examples described in the present specification or during the prosecution of the application, which examples are to be construed as non-exclusive. It is intended, therefore, that the specification and examples be considered as exemplary only, with a true scope and spirit being indicated by the following claims and their full scope of equivalents.
The above description is intended to be illustrative and not restrictive. For example, the above-described examples (or one or more versions thereof) may be used in combination with each other. For example, other embodiments may be used by those of ordinary skill in the art upon reading the above description. In addition, in the foregoing detailed description, various features may be grouped together to streamline the disclosure. This should not be interpreted as an intention that a disclosed feature not claimed is essential to any claim. Rather, the subject matter of the present disclosure may lie in less than all features of a particular disclosed embodiment. Thus, the following claims are hereby incorporated into the detailed description as examples or embodiments, with each claim standing on its own as a separate embodiment, and it is contemplated that these embodiments may be combined with each other in various combinations or permutations. The scope of the disclosure should be determined with reference to the appended claims, along with the full scope of equivalents to which such claims are entitled.
While the present disclosure has been described in detail with reference to the embodiments, the present disclosure is not limited to the specific embodiments, and those skilled in the art can make various modifications and alterations based on the concept of the present disclosure, and the modifications and alterations should fall within the scope of the present disclosure as claimed.
Claims (10)
1. An optoelectronic material and device characterization system, comprising:
a laser emitting assembly for emitting light of a predetermined wavelength as aging light and probe light;
a first light-transmitting device group for transmitting light of the predetermined wavelength;
the microscopic observation mirror is used for transmitting the light from the first light-transmitting device group to the object to be measured and observing the aging degree of the object to be measured;
the external driving and measuring circuit is used for applying voltage to the body to be measured so as to realize electro-optic conversion, and transmitting the optical signal after the electro-optic conversion to the second optical transmission device group through the microscopic observation mirror;
the second optical transmitter set is used for transmitting the optical signal after the electro-optical conversion to the first detector;
the first detector is used for analyzing the optical signal from the second optical transmitter set to obtain an electroluminescent signal and a photoluminescence signal of the object to be detected.
2. The optoelectronic material and device characterization system of claim 1, wherein the laser emitting assembly comprises:
a first laser for emitting a first optical signal of a first predetermined wavelength as probe light; and
a second laser for emitting a second optical signal at a second predetermined wavelength, the second optical signal being the aged light.
3. The optoelectronic material and device characterization system of claim 2, further comprising:
the chopper is used for processing the first optical signal into an alternating current optical signal;
the beam splitter splits the alternating current optical signal into a first alternating current optical signal and a second alternating current optical signal, transmits the first alternating current optical signal to the first optical transmission device group, and transmits the second alternating current optical signal to the second detector;
the second detector is used for receiving the second alternating current optical signal.
4. The optoelectronic material and device characterization system of claim 3, further comprising:
and the phase-locked amplifier is used for receiving the optical signals of the second detector and the first detector and obtaining a corrected photoluminescence signal according to the optical signals.
5. The optoelectronic material and device characterization system of claim 3, further comprising:
a beam combiner coupled to the second laser and coupled to the beam splitter.
6. The optoelectronic material and device characterization system of claim 3,
the first optical signal is processed by the chopper and the beam splitter and then input into the first optical conduction component group;
the second optical signal is directly input into the transmission optical path of the first optical conduction component group.
7. The optoelectronic material and device characterization system of any one of claims 1 to 6, further comprising:
a third laser for emitting a third optical signal of a third predetermined wavelength as the activation light.
8. The optoelectronic material and device characterization system of any one of claims 1 to 6, further comprising:
and the camera component is used for acquiring and displaying image data and adjusting material alignment.
9. The optoelectronic material and device characterization system of any one of claims 1 to 6, wherein the first set of light transmissive devices comprises at least: a mirror and a mirror.
10. The optoelectronic material and device characterization system of any one of claims 1 to 6, wherein the second set of light transmissive devices comprises at least: filter mirrors and turning mirrors.
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