CN215930927U - Photoelectric sensor and electronic device - Google Patents

Photoelectric sensor and electronic device Download PDF

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Publication number
CN215930927U
CN215930927U CN202122403172.1U CN202122403172U CN215930927U CN 215930927 U CN215930927 U CN 215930927U CN 202122403172 U CN202122403172 U CN 202122403172U CN 215930927 U CN215930927 U CN 215930927U
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substrate
projection
photosensitive
light
chip
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孙塔
李碧洲
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Epco Microelectronics Jiangsu Co ltd
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Epco Microelectronics Jiangsu Co ltd
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Abstract

The utility model discloses a photoelectric sensor and an electronic device. The photoelectric sensor includes: the device comprises a substrate, a photosensitive chip, a light-emitting chip, a packaging layer and a shading plate; the photosensitive chip and the light-emitting chip are positioned on the same side of the substrate; the packaging layer is positioned on one side of the substrate facing the photosensitive chip and the light-emitting chip and covers the photosensitive chip and the light-emitting chip; the shading plate is positioned on one side of the packaging layer, which is back to the substrate; the photosensitive chip comprises a photosensitive area; the projection of the photosensitive area of the photosensitive chip on the substrate is positioned outside the projection of the light shielding plate on the substrate; the light shielding plate comprises a light hole, and the projection of the light emitting chip on the substrate is positioned in the projection of the light hole on the substrate. According to the technical scheme, larger space can be provided for the photosensitive chip and the light-emitting chip, so that the photoelectric sensor can accommodate the photosensitive chip and the light-emitting chip with larger sizes, and the maximum chip size which can be accommodated in the photoelectric sensor can be increased.

Description

Photoelectric sensor and electronic device
Technical Field
The utility model relates to the technical field of sensors, in particular to a photoelectric sensor and electronic equipment.
Background
In the related art, a photoelectric sensor is used as an important electronic device to be applied to various electronic devices more and more widely, and the demand for the photoelectric sensor is also higher and higher.
This puts higher demands on performance parameters such as the maximum chip size that can be accommodated inside the photosensor.
SUMMERY OF THE UTILITY MODEL
The utility model provides a photoelectric sensor and an electronic device, which are used for solving the defects in the related art.
According to a first aspect of embodiments of the present invention, there is provided a photosensor including: the device comprises a substrate, a photosensitive chip, a light-emitting chip, a packaging layer and a shading plate;
the photosensitive chip and the light-emitting chip are positioned on the same side of the substrate;
the packaging layer is positioned on one side of the substrate, which faces the photosensitive chip and the light-emitting chip, and covers the photosensitive chip and the light-emitting chip;
the light shielding plate is positioned on one side of the packaging layer, which faces away from the substrate;
the photosensitive chip comprises a photosensitive area; the projection of the photosensitive area of the photosensitive chip on the substrate is positioned outside the projection of the light shielding plate on the substrate; the light shielding plate comprises a light hole, and the projection of the light emitting chip on the substrate is positioned in the projection of the light hole on the substrate.
In one embodiment, the photosensor further comprises a light blocking wall; the packaging layer comprises a first packaging part and a second packaging part, and the light blocking wall is positioned between the first packaging part and the second packaging part; the first packaging part covers the light-emitting chip, and the second packaging part covers the photosensitive chip;
the encapsulation layer comprises a first transparent region; the first transparent area is positioned on one side of the light blocking wall surface facing the photosensitive chip, and the projection of the first transparent area on the substrate is positioned outside the projection of the photosensitive chip on the substrate; the projection of the first transparent region on the substrate is at least partially located within the projection of the shutter plate on the substrate.
In one embodiment, the photosensitive chip further comprises a non-photosensitive area, and the non-photosensitive area is adjacent to the photosensitive area;
the projection of the non-photosensitive region on the substrate is outside the projection of the mask on the substrate, and the projection of the first transparent region on the substrate is inside the projection of the mask on the substrate.
In one embodiment, the photosensitive chip further comprises a non-photosensitive area, and the non-photosensitive area is adjacent to the photosensitive area; the projection of the non-photosensitive area on the substrate is positioned outside the projection of the shading plate on the substrate, and the projection part of the first transparent area on the substrate is positioned inside the projection of the shading plate on the substrate.
In one embodiment, the photosensitive chip further comprises a non-photosensitive area, and the non-photosensitive area is adjacent to the photosensitive area;
the photoelectric sensor also comprises a light blocking wall; the packaging layer comprises a first packaging part and a second packaging part, and the light blocking wall is positioned between the first packaging part and the second packaging part; the first packaging part covers the light-emitting chip, and the second packaging part covers the photosensitive chip;
the packaging layer comprises a first transparent area, the first transparent area is positioned on one side, facing the photosensitive chip, of the light blocking wall surface, and the projection of the first transparent area on the substrate is positioned outside the projection of the photosensitive chip on the substrate;
the projection of the non-photosensitive region on the substrate is at least partially within the projection of the mask on the substrate.
In one embodiment, a projection of the non-photosensitive region on the substrate and a projection of the first transparent region on the substrate are both partially located within a projection of the shutter plate on the substrate.
In one embodiment, the projection of the non-photosensitive region on the substrate is located within the projection of the mask on the substrate, and the projection of the first transparent region on the substrate is located within the projection of the mask on the substrate.
In one embodiment, the projection of the non-photosensitive region on the substrate and the projection of the first transparent region on the substrate are both located within the projection of the shutter plate on the substrate.
In one embodiment, the photosensitive chip further comprises a non-photosensitive area, and the non-photosensitive area is adjacent to the photosensitive area;
the photoelectric sensor also comprises a light blocking wall; the packaging layer comprises a first packaging part and a second packaging part, and the light blocking wall is positioned between the first packaging part and the second packaging part; the first packaging part covers the light-emitting chip, and the second packaging part covers the photosensitive chip;
the packaging layer comprises a first transparent area, the first transparent area is positioned on one side, facing the photosensitive chip, of the light blocking wall surface, and the projection of the first transparent area on the substrate is positioned outside the projection of the photosensitive chip on the substrate;
the projection of the non-photosensitive area on the substrate and the projection of the first transparent area on the substrate are both located outside the projection of the light shielding plate on the substrate.
According to a second aspect of embodiments of the present invention, there is provided an electronic apparatus, including: the photoelectric sensor is described above.
According to the above embodiment, since the photosensitive chip and the light emitting chip are located on the same side of the substrate, the package layer is located on the side of the substrate facing the photosensitive chip and the light emitting chip, and covers the photosensitive chip and the light emitting chip, the light shielding plate is located on the side of the package layer facing away from the substrate, the photosensitive chip includes the photosensitive region, the projection of the photosensitive region of the photosensitive chip on the substrate is located outside the projection of the light shielding plate on the substrate, the light shielding plate includes the light hole, and the projection of the light emitting chip on the substrate is located inside the projection of the light hole on the substrate, in this way, the light shielding plate only covers the surface of the package layer facing away from the substrate and does not cover the peripheral sides of the package layer, so that it is unnecessary to reserve an installation space for installing the light shielding plate around the package layer, and thus a larger space can be provided for the photosensitive chip and the light emitting chip, so that a larger-sized photosensitive chip and a light emitting chip can be accommodated, therefore, the size of the maximum chip capable of being accommodated in the photoelectric sensor can be increased, and the performances of the photoelectric sensor such as detection distance, detection precision and the like are improved.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the utility model, as claimed.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the utility model and together with the description, serve to explain the principles of the utility model.
Fig. 1 is a top view of a photosensor shown in accordance with an embodiment of the present invention.
Fig. 2 is a cross-sectional view of fig. 1 along section line AA.
Fig. 3 is a top view of another photosensor shown in accordance with an embodiment of the present invention.
Fig. 4 is a cross-sectional view of fig. 3 along section line AA.
Fig. 5 is a top view of another photosensor shown in accordance with an embodiment of the present invention.
Fig. 6 is a cross-sectional view of fig. 5 along section line AA.
Fig. 7 is a top view of another photosensor shown in accordance with an embodiment of the present invention.
Fig. 8 is a cross-sectional view of fig. 7 along section line AA.
Fig. 9 is a top view of another photosensor shown in accordance with an embodiment of the present invention.
Fig. 10 is a cross-sectional view of fig. 9 taken along section line AA.
Fig. 11 is a top view of another photosensor shown in accordance with an embodiment of the present invention.
Fig. 12 is a cross-sectional view of fig. 11 taken along section line AA.
Fig. 13 is a cross-sectional view illustrating another photosensor according to an embodiment of the present invention.
Detailed Description
Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present invention. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the utility model, as detailed in the appended claims.
An embodiment of the present invention provides a photosensor, where the photosensor 1, as shown in fig. 1 and fig. 2, includes: the light emitting chip 10, the photosensitive chip 11, the substrate 12, the encapsulation layer 13, and the light shielding plate 14. Wherein figure 2 is a cross-sectional view of figure 1 along section line AA.
As shown in fig. 1 and 2, the light sensing chip 11 and the light emitting chip 10 are located on the substrate 12 and are located on the same side of the substrate 12. The encapsulation layer 13 is located on a side of the substrate 12 facing the light sensing chip 11 and the light emitting chip 10, and the encapsulation layer 13 covers the light sensing chip 11 and the light emitting chip 10. The shadow mask 14 is located on a side of the encapsulation layer 13 facing away from the substrate 12. The light shielding plate 14 is provided with a light hole 17, and the projection of the light emitting chip 10 on the substrate 12 is positioned within the projection of the light hole 17 on the substrate 12. The photosensitive chip 11 includes a photosensitive region 111 and a non-photosensitive region 112, the photosensitive region 111 is adjacent to the non-photosensitive region 112, the non-photosensitive region 112 may be disposed around the photosensitive region 111, and the photosensitive region 111 and the non-photosensitive region 112 may also be disposed side by side. The projection of the photosensitive area 111 on the substrate 12 is located outside the projection of the mask 14 on the substrate.
The light hole 17 may be a through hole in the light shielding plate 14, or may be a film layer that allows light of a specific wavelength band to pass through.
In this embodiment, because sensitization chip and luminous chip are located on the substrate, the encapsulated layer is located the substrate and covers sensitization chip and luminous chip, the light screen is located the one side of substrate dorsad on the encapsulated layer, set up the light trap on the light screen, the projection of luminous chip on the substrate is located within the projection of light trap on the substrate, thus, the light signal of luminous chip transmission can be launched out through the light trap, and simultaneously, the projection of sensitization district of sensitization chip on the substrate is located outside the projection of light screen on the substrate, the light screen can not influence sensitization chip and receive the light signal like this, the light screen just can not influence photoelectric sensor's normal work promptly. The light shielding plate is positioned on one side, back to the substrate, of the packaging layer, and therefore the light shielding plate only covers the surface, back to the substrate, of the packaging layer and cannot cover the peripheral side faces of the packaging layer. Meanwhile, due to the adoption of the structure of the light shading plate, the light shading structure is not required to be formed by injection molding when the photoelectric sensor is prepared, the stress action generated between materials due to different thermal expansion coefficients between the materials subjected to injection molding caused by multiple times of injection molding is avoided, the problem of reduction of the reliability of the package is solved, and the reliability of the package can be improved.
The photoelectric sensor provided by the embodiment of the present invention is briefly described above, and the photoelectric sensor provided by the embodiment of the present invention is described in detail below.
The embodiment of the utility model also provides a photoelectric sensor. On the basis of the above embodiments, the photosensor further includes a light blocking wall 15 and a lens 16, as shown in fig. 1 and 2.
As shown in fig. 2, the encapsulation layer 13 includes a first encapsulation portion 131 and a second encapsulation portion 132, and the light blocking wall 15 is located between the first encapsulation portion 131 and the second encapsulation portion 132. The first sealing portion 131 covers the light emitting chip 10, and the second sealing portion 132 covers the photosensitive chip 11.
As shown in fig. 1, the encapsulation layer 13 includes a first transparent region 133. The first transparent region 133 is located on a side of the light blocking wall 15 facing the photosensitive chip 11, and a projection of the first transparent region 133 on the substrate 12 is located outside a projection of the photosensitive chip 11 on the substrate 12.
As shown in fig. 1, in some embodiments, the projection of the non-photosensitive region 112 on the substrate 12 is outside the projection of the shutter plate 14 on the substrate 12, and the projection of the first transparent region 133 on the substrate 12 is within the projection of the shutter plate 14 on the substrate 12. In this way, the non-photosensitive region 112 of the photosensitive chip 11 is not covered by the light shielding plate 14, and the first transparent region 133 is only partially covered by the light shielding plate 14, so that compared with a scheme in which the non-photosensitive region 112 is not covered and the first transparent region 133 is completely covered, the portion of the surface of the second encapsulating portion 132 facing away from the substrate 12 covered by the light shielding plate 14 is reduced, thereby allowing the incident range of light incident to the photosensitive chip 11 to be increased, increasing the angle of incident light that can be received by the photosensitive region 111 of the photosensitive chip 11, so that the maximum field angle of the photosensitive chip 11 is increased, and enhancing the detection capability of the photosensor.
In some embodiments, as shown in fig. 2, two lenses 16 are located on the side of the encapsulation layer 13 facing away from the substrate 12, the projection of the photosensitive region 111 on the substrate 12 is located within the projection of one lens 16 on the substrate 12, the projection of the light emitting chip 10 on the substrate 12 is located within the projection of the other lens 16 on the substrate 12, and the lens 16 may be located in the light-transmitting hole 17. The lens 16 above the photosensitive area 111 can focus the received light to the photosensitive area 111, so that the incident light with a larger incident angle can be converged through the lens and received by the photosensitive area 111, the range of the incident light which can be received by the photosensitive area 111 is enlarged, the maximum field angle of the photoelectric sensor is improved, the lens 16 above the light emitting chip 10 can focus the light emitted by the light emitting chip 10, the light emitted by the light emitting chip 10 can be converged together, and the detection distance and the detection precision of the photoelectric sensor are improved.
In some embodiments, the light shield 14 and the light blocking wall 15 are integrally formed. The light shielding plate 14 and the light blocking wall 15 are integrally formed, so that the light shielding plate 14 and the light blocking wall 15 do not need to be installed respectively when the installation is carried out, and the installation reliability of the photoelectric sensor is improved while the installation difficulty is reduced.
In some embodiments, the transparent encapsulation layer 13 may be formed in the encapsulation layer 13 by planar mirror injection molding to protect the light sensing chip 11 and the light emitting chip 10, and the lens 16 is separately molded and then mounted on the encapsulation layer 13.
In other embodiments, the encapsulation layer 13 and the lens 16 may be integrally formed by injection molding. The integral forming mode can greatly simplify the process and reduce the preparation difficulty.
Fig. 3 is a top view of another photosensor shown according to an embodiment of the present invention, and fig. 4 is a cross-sectional view of another photosensor shown according to an embodiment of the present invention, wherein fig. 4 is a cross-sectional view of fig. 3 along a section line AA.
As shown in fig. 3 and 4, in some embodiments, the projection of the non-photosensitive region 112 on the substrate 12 is outside the projection of the shutter plate 14 on the substrate 12, and the projection of the first transparent region 133 on the substrate 12 is within the projection of the shutter plate 14 on the substrate 12. In this way, the non-photosensitive area 112 of the photosensitive chip 11 is not covered by the light shielding plate 14, and therefore, compared with a scheme in which the non-photosensitive area 112 is partially covered or completely covered and the first transparent area 133 is completely covered, a portion of the surface of the second encapsulating portion 132 facing away from the substrate 12 covered by the light shielding plate 14 is reduced, thereby allowing an incident range of light incident to the photosensitive chip 11 to be increased, an angle of incident light that can be received by the photosensitive area 111 of the photosensitive chip 11 to be increased, so that a maximum field angle of the photosensor is improved, and a detection capability of the photosensor is enhanced.
Fig. 5 is a top view of another photosensor shown according to an embodiment of the present invention, and fig. 6 is a cross-sectional view of another photosensor shown according to an embodiment of the present invention, wherein fig. 6 is a cross-sectional view of fig. 5 along a section line AA.
As shown in fig. 5 and 6, in some embodiments, the projected portion of the non-photosensitive region 112 onto the substrate 12 is located within the projection of the shutter plate 14 onto the substrate 12, and the projected portion of the first transparent region 133 onto the substrate 12 is located within the projection of the shutter plate 14 onto the substrate 12. In this way, the non-photosensitive region 112 and the first transparent region 133 are only partially covered by the light shielding plate 14, and therefore, compared with a scheme in which the non-photosensitive region 112 is completely covered and the first transparent region 133 is completely covered, a portion of the surface of the second encapsulating portion 132 facing away from the substrate 12 covered by the light shielding plate 14 is reduced, thereby allowing an incident range of light incident to the photosensitive chip 11 to be increased, an angle of incident light that can be received by the photosensitive region 111 of the photosensitive chip 11 to be increased, so that a maximum field angle of the photosensor is improved, and a detection capability of the photosensor is enhanced.
Fig. 7 is a top view of another photosensor shown according to an embodiment of the present invention, and fig. 8 is a cross-sectional view of another photosensor shown according to an embodiment of the present invention, wherein fig. 8 is a cross-sectional view of fig. 7 along a section line AA.
As shown in fig. 7 and 8, in some embodiments, the projection of the non-photosensitive region 112 onto the substrate 12 is located within the projection of the shutter plate 14 onto the substrate 12, and the projection of the first transparent region 133 onto the substrate 12 is located within the projection of the shutter plate 14 onto the substrate 12. In this way, the non-photosensitive area 112 of the photosensitive chip 11 is only partially covered by the light shielding plate 14, and therefore, compared with a scheme in which the non-photosensitive area 112 is completely covered and the first transparent area 133 is completely covered, the portion of the surface of the second packaging portion 132 facing away from the substrate 12 covered by the light shielding plate 14 is reduced, thereby allowing the incident range of light incident to the photosensitive chip 11 to be increased, and the angle of incident light that can be received by the photosensitive area 111 of the photosensitive chip 11 to be increased, so that the maximum field angle of the photosensor is increased, and the detection capability of the photosensor is enhanced.
Fig. 9 is a top view of another photosensor shown according to an embodiment of the present invention, and fig. 10 is a cross-sectional view of another photosensor shown according to an embodiment of the present invention, wherein fig. 10 is a cross-sectional view of fig. 9 along a section line AA.
As shown in fig. 9 and 10, in some embodiments, the light sensing chip 11 and the light emitting chip 10 are located on the substrate 12 and on the same side of the substrate 12. The encapsulation layer 13 is located on a side of the substrate 12 facing the light sensing chip 11 and the light emitting chip 10, and the encapsulation layer 13 covers the light sensing chip 11 and the light emitting chip 10. The shadow mask 14 is located on a side of the encapsulation layer 13 facing away from the substrate 12. The light-shielding plate 14 is provided with a light-transmitting hole 17, the projection of the light-emitting chip 10 on the substrate 12 is positioned within the projection of the light-transmitting hole 17 on the substrate 12, the projection of the non-photosensitive area 112 on the substrate 12 is positioned within the projection of the light-shielding plate 14 on the substrate 12, and the projection of the first transparent area 133 on the substrate 12 is positioned within the projection of the light-shielding plate 14 on the substrate 12. Like this, because the light screen is located the encapsulation layer one side of substrate dorsad, the light screen just only covers the surface of encapsulation layer substrate one side dorsad and can not cover encapsulation layer side all around, compare in the scheme that originally adopts the lens hood, the scheme in this embodiment is guaranteeing need not to set up the structure of barn door around the encapsulation layer under the prerequisite of photoelectric sensor normal work, thereby can provide bigger space for sense optical chip and luminescence chip, make the encapsulation layer can hold bigger size's chip, and then promote the inside biggest chip size that can hold of photoelectric sensor, consequently, be favorable to promoting photoelectric sensor's detection precision and performance such as detection distance. Meanwhile, due to the adoption of the structure of the light shading plate, the light shading structure is not required to be formed by injection molding when the photoelectric sensor is prepared, the stress action generated between materials due to different thermal expansion coefficients between the materials subjected to injection molding caused by multiple times of injection molding is avoided, the problem of reduction of the reliability of the package is solved, and the reliability of the package can be improved.
Fig. 11 is a top view of another photosensor shown according to an embodiment of the present invention, and fig. 12 is a cross-sectional view of another photosensor shown according to an embodiment of the present invention, wherein fig. 12 is a cross-sectional view of fig. 11 along a section line AA.
As shown in fig. 11 and 12, in some embodiments, the projection of the non-photosensitive region 112 onto the substrate 12 is outside the projection of the shutter plate 14 onto the substrate 12, and the projection of the first transparent region 133 onto the substrate 12 is outside the projection of the shutter plate 14 onto the substrate 12. In this way, the non-photosensitive region 112 and the first transparent region 133 are not covered by the light shielding plate 14, compared to a scheme in which the non-photosensitive region 112 is partially covered or completely covered and the first transparent region 133 is partially covered or completely covered, a surface of the second encapsulation portion 132 facing away from the substrate 12 is not covered by the light shielding plate 14, so that the entire surface of the second encapsulation portion 132 facing away from the substrate 12 is an incident range of light allowed to be incident to the photosensitive chip 11, so that an incident light angle that can be received by the photosensitive region 111 is greatly increased, a maximum field angle of the photosensor is greatly improved, and a detection capability of the photosensor is greatly enhanced.
Fig. 13 is a cross-sectional view illustrating another photosensor according to an embodiment of the present invention. As shown in fig. 13, in some embodiments, a surface of a side of the encapsulation layer 13 facing away from the substrate 12 is a plane, the side of the encapsulation layer 13 facing away from the substrate 12 may not be provided with the lens 16, and the encapsulation layer 13 is equivalent to a plane lens, so that light emitted from the light emitting chip 10 can directly pass through the encapsulation layer 13 without converging light emitted from the light emitting chip 10, and light incident to the light sensing chip 11 can directly pass through the encapsulation layer 13 and be received by the light sensing chip 11 without converging light about to be incident to the light sensing chip 11. Thus, since the lens 16 is not provided, the structure of the photosensor can be simplified, and the manufacturing process of the photosensor can be simplified.
The embodiment of the utility model also provides the electronic equipment. The electronic device comprises the photoelectric sensor 1 according to any one of the above embodiments.
It should be noted that the electronic device in this embodiment may be: any product or part with a photoelectric sensor, such as a mobile phone, a tablet personal computer, a television, a notebook computer, a digital photo frame, a navigator, a sweeping robot and the like.
It is noted that in the drawings, the sizes of layers and regions may be exaggerated for clarity of illustration. Also, it will be understood that when an element or layer is referred to as being "on" another element or layer, it can be directly on the other element or layer or intervening layers may also be present. In addition, it will be understood that when an element or layer is referred to as being "under" another element or layer, it can be directly under the other element or intervening layers or elements may also be present. In addition, it will also be understood that when a layer or element is referred to as being "between" two layers or elements, it can be the only layer between the two layers or elements, or more than one intermediate layer or element may also be present. Like reference numerals refer to like elements throughout.
In the present invention, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. The term "plurality" means two or more unless expressly limited otherwise.
Other embodiments of the utility model will be apparent to those skilled in the art from consideration of the specification and practice of the utility model disclosed herein. This invention is intended to cover any variations, uses, or adaptations of the utility model following, in general, the principles of the utility model and including such departures from the present disclosure as come within known or customary practice within the art to which the utility model pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the utility model being indicated by the following claims.
It will be understood that the utility model is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the utility model is limited only by the appended claims.

Claims (10)

1. A photosensor, comprising: the device comprises a substrate, a photosensitive chip, a light-emitting chip, a packaging layer and a shading plate;
the photosensitive chip and the light-emitting chip are positioned on the same side of the substrate;
the packaging layer is positioned on one side of the substrate, which faces the photosensitive chip and the light-emitting chip, and covers the photosensitive chip and the light-emitting chip;
the light shielding plate is positioned on one side of the packaging layer, which faces away from the substrate;
the photosensitive chip comprises a photosensitive area; the projection of the photosensitive area of the photosensitive chip on the substrate is positioned outside the projection of the light shielding plate on the substrate; the light shielding plate comprises a light hole, and the projection of the light emitting chip on the substrate is positioned in the projection of the light hole on the substrate.
2. The photosensor of claim 1, further comprising a light blocking wall; the packaging layer comprises a first packaging part and a second packaging part, and the light blocking wall is positioned between the first packaging part and the second packaging part; the first packaging part covers the light-emitting chip, and the second packaging part covers the photosensitive chip;
the encapsulation layer comprises a first transparent region; the first transparent area is positioned on one side of the light blocking wall surface facing the photosensitive chip, and the projection of the first transparent area on the substrate is positioned outside the projection of the photosensitive chip on the substrate; the projection of the first transparent region on the substrate is at least partially located within the projection of the shutter plate on the substrate.
3. The photosensor of claim 2, wherein the photosensitive chip further comprises a non-photosensitive region adjacent to the photosensitive region;
the projection of the non-photosensitive region on the substrate is outside the projection of the mask on the substrate, and the projection of the first transparent region on the substrate is inside the projection of the mask on the substrate.
4. The photosensor of claim 2, wherein the photosensitive chip further comprises a non-photosensitive region adjacent to the photosensitive region; the projection of the non-photosensitive area on the substrate is positioned outside the projection of the shading plate on the substrate, and the projection part of the first transparent area on the substrate is positioned inside the projection of the shading plate on the substrate.
5. The photosensor of claim 1, wherein the photosensitive chip further comprises a non-photosensitive region adjacent to the photosensitive region;
the photoelectric sensor also comprises a light blocking wall; the packaging layer comprises a first packaging part and a second packaging part, and the light blocking wall is positioned between the first packaging part and the second packaging part; the first packaging part covers the light-emitting chip, and the second packaging part covers the photosensitive chip;
the packaging layer comprises a first transparent area, the first transparent area is positioned on one side, facing the photosensitive chip, of the light blocking wall surface, and the projection of the first transparent area on the substrate is positioned outside the projection of the photosensitive chip on the substrate;
the projection of the non-photosensitive region on the substrate is at least partially within the projection of the mask on the substrate.
6. The photosensor of claim 5, wherein the projection of the non-photosensitive region on the substrate and the projection of the first transparent region on the substrate are both partially within the projection of the shutter plate on the substrate.
7. The photosensor of claim 5, wherein the projection of the non-photosensitive region on the substrate is located within the projection of the shutter plate on the substrate, and the projection of the first transparent region on the substrate is located within the projection of the shutter plate on the substrate.
8. The photosensor of claim 5, wherein the projection of the non-photosensitive region on the substrate and the projection of the first transparent region on the substrate are both located within the projection of the shutter plate on the substrate.
9. The photosensor of claim 1, wherein the photosensitive chip further comprises a non-photosensitive region adjacent to the photosensitive region;
the photoelectric sensor also comprises a light blocking wall; the packaging layer comprises a first packaging part and a second packaging part, and the light blocking wall is positioned between the first packaging part and the second packaging part; the first packaging part covers the light-emitting chip, and the second packaging part covers the photosensitive chip;
the packaging layer comprises a first transparent area, the first transparent area is positioned on one side, facing the photosensitive chip, of the light blocking wall surface, and the projection of the first transparent area on the substrate is positioned outside the projection of the photosensitive chip on the substrate;
the projection of the non-photosensitive area on the substrate and the projection of the first transparent area on the substrate are both located outside the projection of the light shielding plate on the substrate.
10. An electronic device characterized by comprising the photoelectric sensor of any one of claims 1 to 9.
CN202122403172.1U 2021-09-30 2021-09-30 Photoelectric sensor and electronic device Active CN215930927U (en)

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CN202122403172.1U CN215930927U (en) 2021-09-30 2021-09-30 Photoelectric sensor and electronic device

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Application Number Priority Date Filing Date Title
CN202122403172.1U CN215930927U (en) 2021-09-30 2021-09-30 Photoelectric sensor and electronic device

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