CN215912029U - High power density driver with SiC power module - Google Patents
High power density driver with SiC power module Download PDFInfo
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- CN215912029U CN215912029U CN202122094894.3U CN202122094894U CN215912029U CN 215912029 U CN215912029 U CN 215912029U CN 202122094894 U CN202122094894 U CN 202122094894U CN 215912029 U CN215912029 U CN 215912029U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The utility model relates to a high-power density driver with a SiC power module, which comprises an electric control device, wherein the electric control device comprises a SiC module with a power supply, an interface adapter plate positioned above the SiC module, a drive plate arranged between the interface adapter plate and the SiC module and a control circuit board positioned above the interface adapter plate, the SiC module comprises a SiC module substrate, one end of the drive plate is vertically connected with the SiC module substrate, the other end of the drive plate is vertically connected with the interface adapter plate, each circuit structure is modularized, the structure is compact, and the non-surface of the circuit boards are tightly connected, so that the heat dissipation performance of the driver is improved, and the structure that the circuit boards are stacked layer by layer is adopted, the occupied space is reduced, the assembly is simple, an external open wire and a switching structure are not needed, the compatibility is good, which circuit module has a fault, and only the circuit module with the fault needs to be maintained, the cost is reduced.
Description
Technical Field
The utility model relates to the technical field of high-power drivers, in particular to a high-power-density driver with a SiC power module.
Background
The electric control device of the existing high-power-density motor driver mainly comprises a power supply circuit, a control circuit, a drive circuit and an anti-interference circuit, wherein the drive circuit also comprises components such as a transformer, a large capacitor and a small capacitor; the circuit structure not only occupies large space, but also the control line between the control circuit and the drive circuit needs to be connected by a row of open wires, and simultaneously, because the interfaces of the control circuit and the external equipment (peripheral equipment) do not correspond to each other due to the butt joint position, the control circuit and the external equipment are indirectly connected by using a plurality of rows of open wires and adapter plugs, so that the circuit structure has the defects of troublesome assembly and wiring, poor compatibility, increased failure rate, replacement of the whole circuit board once the circuit board fails, and high maintenance cost.
SUMMERY OF THE UTILITY MODEL
The utility model aims to provide a high-power-density driver with a SiC power module, which has the advantages of compact structure, good heat dissipation performance, small occupied space, simple assembly, good compatibility and low cost.
The utility model adopts the technical scheme that the high-power-density driver with the SiC power module comprises an electric control device, wherein the electric control device comprises the SiC module with a power supply, an interface adapter plate positioned above the SiC module, a driving plate arranged between the interface adapter plate and the SiC module and a control circuit board positioned above the interface adapter plate, the SiC module comprises a SiC module substrate, one end of the driving plate is vertically connected with the SiC module substrate, and the other end of the driving plate is vertically connected with the interface adapter plate.
The utility model has the beneficial effects that: the driver with the SiC power module comprises an independent SiC module, an independent interface adapter plate, an independent drive plate and an independent control circuit board, wherein the interface adapter plate is arranged above the SiC module, the drive plate is vertically connected between the interface adapter plate and a SiC module substrate, the structure replaces the structure that a power circuit, a control circuit, a drive circuit and an anti-interference circuit are manufactured on a whole circuit board in the prior art, the traditional driver design concept is broken through, each circuit structure is modularized, the structure is compact, the circuit boards are tightly connected with each other in a non-surface manner, the heat dissipation performance of the driver is improved, the structure that the circuit boards are overlapped layer by layer is adopted, the occupied space is reduced, the assembly is simple, an external bright line and a switching structure are not needed, and the compatibility is good, which circuit module breaks down only needs to be maintained for the circuit module that breaks down, and the cost is reduced.
As preferred, through a plurality of vertical contact pin group link between control circuit board and the interface keysets, adopt this structure, can improve the thermal diffusivity between control circuit board and the interface keysets to the mode of contact pin is connected, convenient equipment.
As preferred, the SiC module is still including setting up a plurality of power filter boards at the positive of SiC module base plate, a plurality of power filter boards are located the below of interface adapter plate, adopt this structure, set up power filter board on SiC module base plate, and power filter board is used for filtering mains voltage.
As preferred, the SiC module is still including a plurality of SiC power device that are located the SiC module substrate back, SiC power device is located the below of power filter board, SiC power device and power filter board one-to-one adopt this structure, and power filter board is located SiC module substrate openly, and SiC power device is located the SiC module substrate back, and SiC power device is located the below of power filter board, and a power filter board corresponds a SiC power device, adopts this structure, and every power filter board can play the guard action to the SiC power device who corresponds.
Preferably, the SiC module further comprises a large capacitor positioned on the back surface of the SiC module substrate, the large capacitor is positioned on one side of the SiC power device, the large capacitor in the SiC module is arranged on the back surface of the SiC module substrate and positioned on one side of the SiC power device, and the structure is matched with the position of the SiC power device and the position of the power supply filter plate, so that the heat dissipation effect is furthest achieved, and the electric control device is compactly distributed.
Preferably, the electric control device further comprises a heat dissipation bottom plate structure connected with the bottom surface of the SiC power device, and by adopting the structure, the SiC power device can be subjected to heat dissipation through the heat dissipation bottom plate structure.
Preferably, the heat dissipation bottom plate structure comprises a connecting plate connected with the bottom surface of the SiC power device and a plurality of heat dissipation plates vertically connected with the connecting plate, and the heat dissipation plates are arranged at intervals.
Preferably, the drive plate comprises a plurality of insertion blocks, the SiC module substrate comprises a plurality of insertion holes for the insertion blocks to extend out, the SiC power device comprises a plurality of driving signal pins, the insertion blocks are provided with insertion holes for the insertion of each driving signal pin, the insertion blocks of the drive plate penetrate through the insertion holes in the SiC module substrate, so that the insertion holes in the insertion blocks are inserted into the driving signal pins of the SiC power device, and the structure can ensure the compact assembly among the drive plate, the SiC module substrate and the SiC power device and simultaneously ensure that the drive plate transmits the driving signals to the SiC power device.
Preferably, the upper surface of the control circuit board is provided with a plurality of extension communication interfaces, and by adopting the structure, the circuit board can be superposed above the control circuit board through the extension communication interfaces, so that the structure is simple, and the operation is flexible and convenient.
Preferably, the drive board is connected with the interface adapter plate through the plurality of pin inserting bodies, and by adopting the structure, the drive board is connected with the interface adapter plate through the plurality of pin inserting bodies, so that the assembly connection between the drive board and the interface adapter plate is facilitated, and the signal transmission between the drive board and the interface adapter plate is realized.
Drawings
FIG. 1 is a right side view of a high power density drive with a SiC power module of the present invention;
FIG. 2 is a schematic diagram of a high power density driver with a SiC power module according to the present invention;
FIG. 3 is a schematic structural diagram of a drive board and a SiC power device which are plugged together in the utility model;
as shown in the figure: 1. a SiC module; 2. an interface adapter plate; 3. a drive plate; 4. a control circuit board; 5. a SiC module substrate; 6. a vertical needle group; 7. a power supply filter plate; 8. a SiC power device; 9. a large capacitance; 10. a connecting plate; 11. a heat dissipation plate; 12. inserting a block; 13. a socket; 14. a drive signal pin; 15. a heat dissipation base plate structure; 16. an extensible communication interface; 17. a needle inserting body.
Detailed Description
The utility model is further described with reference to the accompanying drawings in connection with specific embodiments for enabling a person skilled in the art to practice the utility model with reference to the description, without the scope of protection of the utility model being limited to the specific embodiments.
It will be understood by those skilled in the art that in the present disclosure, the terms "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used in an orientation or positional relationship indicated in the drawings for ease of description and simplicity of description, and do not indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and thus, the above terms should not be construed as limiting the present invention.
The utility model relates to a high-power-density driver with a SiC power module, which comprises an electric control device, wherein the electric control device comprises a SiC module 1 with a power supply, an interface adapter plate 2 positioned above the SiC module 1, a drive plate 3 arranged between the interface adapter plate 2 and the SiC module 1 and a control circuit board 4 positioned above the interface adapter plate 2, the SiC module 1 comprises a SiC module substrate 5, one end of the drive plate 3 is vertically connected with the SiC module substrate 5, and the other end of the drive plate 3 is vertically connected with the control interface adapter plate 2, as shown in figure 1.
The high power density driver with the SiC power module of the structure of figure 1 comprises an independent SiC module 1, an independent interface adapter plate 2, an independent driving plate 3 and an independent control circuit board 4, wherein the interface adapter plate 2 is arranged above the SiC module 1, the driving plate 3 is vertically connected between the interface adapter plate 2 and a SiC module substrate 5, the structure replaces the structure that a power circuit, a control circuit, a driving circuit and an anti-interference circuit are manufactured on a whole circuit board in the prior art, the traditional design concept of the driver is broken through, each circuit structure is modularized and compact, and non-surface and surface are tightly connected among the circuit boards, so the heat dissipation performance of the driver is improved, and the structure that the circuit boards are overlapped layer by layer is adopted, the occupied space is reduced, the assembly is simple, and an external open wire and a switching structure are not needed, the compatibility is good, which circuit module breaks down, only needs to be maintained aiming at the broken circuit module, and the cost is reduced.
As shown in fig. 1, the control circuit board 4 is connected with the interface adapter plate 2 through a plurality of vertical pin groups 6, and in fig. 2, the vertical pin groups 6 include four, and by adopting the structure, the heat dissipation performance between the control circuit board 4 and the interface adapter plate 2 can be improved, and the pins are connected in a mode, so that the assembly is convenient.
As shown in fig. 1, the SiC module 1 further includes a plurality of power filter plates 7 disposed on the front surface of the SiC module substrate 5, the power filter plates 7 are disposed below the interface adapter plate 2, in fig. 1, the front surface of the SiC module substrate 5 represents the upward surface of the SiC module substrate 5, the number of the power filter plates 7 is 3, and the power filter plates 7 are disposed on the front surface of the SiC module substrate 5 in parallel at equal intervals and used for filtering the power supply voltage.
As shown in fig. 1 and fig. 2, the SiC module 1 further includes a plurality of SiC power devices 8 located on the back surface of the SiC module substrate 5, the SiC power devices 8 are located below the power filter plates 7, in fig. 1, the back surface of the SiC module substrate 5 represents the downward facing surface of the SiC module substrate 5, the number of the SiC power devices 8 is 3, the SiC power devices 8 are connected with the power filter plates 7 in a one-to-one correspondence manner, with this structure, the power filter plates 7 are located on the front surface of the SiC module substrate 5, the SiC power devices 8 are located on the back surface of the SiC module substrate 5, the SiC power devices 8 are located below the power filter plates 7, one power filter plate 7 corresponds to one SiC power device 8, with this structure, each power filter plate 7 can protect the corresponding SiC power device 8.
As shown in fig. 1, the SiC module 1 further includes a plurality of large capacitors 9 located on the back surface of the SiC module substrate 5, the large capacitors 9 are located on one side of the SiC power device 8, the number of the large capacitors 9 is 3, and the large capacitors 9 in the SiC module 1 are arranged in parallel, in the figure, on the back surface of the SiC module substrate 5 and located on one side of the SiC power device 8, and the structure is matched with the position of the SiC power device 8 and the position of the power filter plate 7, so that the heat dissipation effect is maximally achieved, and the electric control device is compactly arranged.
As shown in fig. 1, the electronic control device further includes a heat dissipation base plate structure 15 connected to the bottom surface of the SiC power device 8, and with this structure, the SiC power device 8 can be dissipated heat through the heat dissipation base plate structure 15.
As shown in fig. 2, the heat dissipation base plate structure 15 includes a connection plate 10 connected to the bottom surface of the SiC power device 8 and a plurality of heat dissipation plates 11 vertically connected to the connection plate 10, and the plurality of heat dissipation plates 11 are arranged at intervals.
As shown in fig. 3, the driving plate 3 includes a plurality of insertion blocks 12, the SiC module substrate 5 includes a plurality of insertion holes 13 for the insertion blocks 12 to extend out, the SiC power device 8 includes a plurality of driving signal pins 14, and the insertion blocks 12 are provided with insertion ports for inserting into each driving signal pin 14, with this structure, the insertion blocks 12 of the driving plate 3 penetrate through the insertion holes 13 on the SiC module substrate 5, so that the insertion ports on the insertion blocks 12 are inserted into the driving signal pins 14 of the SiC power device 8, and this structure can ensure compact assembly among the driving plate 3, the SiC module substrate 5 and the SiC power device 8, and at the same time ensure that the driving plate 3 transmits the driving signals to the SiC power device 8.
As shown in fig. 1, the upper surface of the control circuit board 4 is provided with a plurality of extension communication interfaces 16, and with the adoption of the structure, the circuit board can be superposed on the control circuit board 4 through the extension communication interfaces 16 according to actual needs.
As shown in fig. 2, the driving board 3 is connected with the interface adapter board 2 through a plurality of pin bodies 17, and by adopting the structure, the driving board 3 is connected with the interface adapter board 2 through the plurality of pin bodies 17, so that the assembly connection between the driving board 3 and the interface adapter board 2 is facilitated, and the signal transmission between the driving board 3 and the interface adapter board 2 is realized.
Claims (10)
1. A high power density driver with a SiC power module includes an electrical control device, characterized in that: the electric control device comprises a SiC module (1) with a power supply, an interface adapter plate (2) located above the SiC module (1), a drive plate (3) arranged between the interface adapter plate (2) and the SiC module (1) and a control circuit board (4) located above the interface adapter plate (2), wherein the SiC module (1) comprises a SiC module substrate (5), one end of the drive plate (3) is vertically connected with the SiC module substrate (5), and the other end of the drive plate is vertically connected with the control interface adapter plate (2).
2. A high power density driver with a SiC power module as in claim 1, wherein: the control circuit board (4) is connected with the interface adapter plate (2) through a plurality of vertical pin groups (6).
3. A high power density driver with a SiC power module according to claim 1 or claim 2, characterized in that: the SiC module (1) further comprises a plurality of power supply filtering plates (7) arranged on the front surface of the SiC module substrate (5), and the power supply filtering plates (7) are located below the interface adapter plate (2).
4. A high power density driver with a SiC power module as in claim 3, wherein: the SiC module (1) further comprises a plurality of SiC power devices (8) located on the back face of the SiC module substrate (5), the SiC power devices (8) are located below the power supply filter plate (7), and the SiC power devices (8) are in one-to-one correspondence with the power supply filter plate (7).
5. A high power density driver with a SiC power module as in claim 4, wherein: the SiC module (1) further comprises a large capacitor (9) positioned on the back surface of the SiC module substrate (5), and the large capacitor (9) is positioned on one side of the SiC power device (8).
6. A high power density driver with a SiC power module according to claim 4 or claim 5, wherein: the electric control device also comprises a heat dissipation bottom plate structure (15) connected with the bottom surface of the SiC power device (8).
7. A high power density driver with a SiC power module as in claim 6, wherein: the heat dissipation bottom plate structure (15) comprises a connecting plate (10) connected with the bottom surface of the SiC power device (8) and a plurality of heat dissipation plates (11) vertically connected with the connecting plate (10), and the heat dissipation plates (11) are arranged at intervals.
8. A high power density driver with a SiC power module as in claim 6, wherein: the drive plate (3) comprises a plurality of plug blocks (12), the SiC module substrate (5) comprises a plurality of sockets (13) for the plug blocks (12) to extend out, the SiC power device (8) comprises a plurality of drive signal pins (14), and the plug blocks (12) are provided with sockets for being plugged with the drive signal pins (14).
9. A high power density driver with a SiC power module as in claim 1, wherein: the upper surface of the control circuit board (4) is provided with a plurality of extension communication interfaces (16).
10. A high power density driver with a SiC power module as in claim 1, wherein: the driving plate (3) and the interface adapter plate (2) are connected together through a plurality of pin inserting bodies (17).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122094894.3U CN215912029U (en) | 2021-09-01 | 2021-09-01 | High power density driver with SiC power module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122094894.3U CN215912029U (en) | 2021-09-01 | 2021-09-01 | High power density driver with SiC power module |
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| Publication Number | Publication Date |
|---|---|
| CN215912029U true CN215912029U (en) | 2022-02-25 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202122094894.3U Active CN215912029U (en) | 2021-09-01 | 2021-09-01 | High power density driver with SiC power module |
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| CN (1) | CN215912029U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114938588A (en) * | 2022-04-13 | 2022-08-23 | 北京新能源汽车股份有限公司 | Micro control unit for vehicle and vehicle |
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2021
- 2021-09-01 CN CN202122094894.3U patent/CN215912029U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114938588A (en) * | 2022-04-13 | 2022-08-23 | 北京新能源汽车股份有限公司 | Micro control unit for vehicle and vehicle |
| CN114938588B (en) * | 2022-04-13 | 2024-04-12 | 北京新能源汽车股份有限公司 | Micro control unit for vehicle and vehicle |
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