CN215896442U - Display panel - Google Patents

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Publication number
CN215896442U
CN215896442U CN202122350495.9U CN202122350495U CN215896442U CN 215896442 U CN215896442 U CN 215896442U CN 202122350495 U CN202122350495 U CN 202122350495U CN 215896442 U CN215896442 U CN 215896442U
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layer
cathode layer
light emitting
transparent display
display area
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CN202122350495.9U
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林志斌
刘剑
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Fujian Huajiacai Co Ltd
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Fujian Huajiacai Co Ltd
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Abstract

The utility model discloses a display panel, which comprises a transparent display area of a camera under a screen, an effective light emitting area and a glass substrate, wherein the upper end surface of the glass substrate is provided with a TFT (thin film transistor) array layer; the cathode layer at the transparent display area is a cathode layer at the transparent display area, and the cathode layer at the effective light emitting area is a cathode layer at the effective light emitting area. The film packaging layer comprises a film packaging layer consisting of a first inorganic layer, an organic layer and a second inorganic layer from bottom to top. According to the display panel, the existing mechanism of the metal cathode layer is changed, and the novel material which is higher in penetration rate, flexible and capable of improving the conductive effect of the metal cathode layer is adopted, so that the problems of low penetration rate, poor display or poor photographic imaging in the existing under-screen camera technology are greatly improved.

Description

Display panel
Technical Field
The utility model belongs to the technical field of display panels, and particularly relates to a display panel.
Background
Since the OLED (Organic Light-Emitting Diode, abbreviated as OLED) has the advantages of low voltage requirement, high power saving efficiency, fast response, Light weight, thin thickness, simple structure, low cost, wide viewing angle, almost infinite contrast, low power consumption, extremely high response speed, etc., it has become one of the most important display technologies today, and is gradually replacing the TFT-LCD, and is expected to become the next generation of mainstream display technology after the LCD.
In recent years, due to market demands, manufacturers of panel mobile phone terminals gradually develop a full screen, and display technology reaches a peak by matching with an OLED technology. The full screen achieves the target of high screen occupation ratio by shortening the upper, lower, left and right frames. Through the development of a few years, the bang screen, the water drop screen, the hole digging screen and the like are in a great variety, and the technology of the camera below the screen is developed in order to improve the screen ratio. The technology is mainly that when a camera is used for taking a picture, light rays of an external environment can enter a module of the camera through a transparent display area on the top; when the camera is not used, the pixels in the screen can be normally displayed in the transparent display area under the drive of the circuit, so that the position does not need to be provided with holes, and the screen occupation ratio is further improved.
However, the technology still has a disadvantage that the picture has some differences when the transparent display area and the adjacent effective light emitting area are normally displayed without a camera; or when taking a picture, the imaging effect is poor. For this reason, it was found that the low penetration rate of this region is a key influencing factor. To this end, we propose a display panel to solve the problems mentioned in the above background art.
SUMMERY OF THE UTILITY MODEL
The present invention is directed to a display panel to solve the above problems.
In order to achieve the purpose, the utility model provides the following technical scheme: a display panel comprises a transparent display area of a camera under a screen, an effective light emitting area and a glass substrate, wherein a TFT thin film transistor array layer is arranged on the upper end surface of the glass substrate, a pixel definition layer is arranged on the upper end surface of the TFT thin film transistor array layer, an OLED device layer is arranged on the pixel definition layer, a cathode layer is arranged on the upper end surface of the pixel definition layer, and a thin film packaging layer is arranged on the upper end surface of the cathode layer; the cathode layer at the transparent display area is a transparent display area cathode layer, and the cathode layer at the effective light emitting area is an effective light emitting area cathode layer.
The thin film packaging layer comprises a thin film packaging layer consisting of a first inorganic layer, an organic layer and a second inorganic layer from bottom to top.
The transparent display area cathode layer and the effective light emitting area cathode layer are made of the same material, and are all annealed PAN nanofiber reinforced graphene films, titanium oxide crystal films, silk fibroin films or organic protonic acid HTB nano coatings coated on the surfaces of flexible graphene.
The material of the cathode layer in the transparent display area is different from that of the cathode layer in the effective light emitting area, the cathode layer in the transparent display area is made of an annealed PAN (polyacrylonitrile) nanofiber reinforced graphene film, a titanium oxide crystal film or a silk fibroin film or a nano coating formed by coating organic protonic acid (HTB) on the surface of flexible graphene, and the cathode layer in the effective light emitting area is made of metal.
A preparation method of a display panel specifically comprises the following steps:
s1, preparing a TFT array layer, namely a TFT thin film transistor array layer, on the flexible substrate or the glass substrate;
s2, preparing a pixel defining layer on the TFT thin film transistor array layer, wherein the pixel defining layer defines an OLED device preparation area;
s3, preparing an OLED device layer, mainly comprising: a hole injection layer, a hole transport layer, an RGB light emitting layer, an electron injection layer, an electron transport layer, and the like;
s4, preparing a cathode layer on the pixel definition layer,
s5, preparing a film packaging layer consisting of a first inorganic layer, an organic layer and a second inorganic layer on the cathode layer.
Compared with the prior art, the utility model has the beneficial effects that: according to the display panel provided by the utility model, the structure of the existing metal cathode layer is changed, and the novel material which is higher in penetration rate, flexible and capable of improving the conductive effect is adopted, so that the problems of low penetration rate, poor display or poor photographic imaging in the existing under-screen camera technology are greatly improved.
The utility model also provides a preparation method of the display panel, and by the structure and the method, the problem of low penetration rate of the transparent display area of the existing under-screen camera can be greatly improved.
Drawings
FIG. 1 is a schematic diagram of a transparent display area, an active light area, and an arrangement of an off-screen camera according to the present invention;
FIG. 2 is a schematic cross-sectional view of embodiment 1 of FIG. 1 taken along line A-A;
FIG. 3 is a schematic cross-sectional view of embodiment 2 of FIG. 1 taken along line A-A;
FIG. 4 is a schematic flow chart of a method for manufacturing a display panel according to the present invention;
FIG. 5 is a schematic side sectional view of step S1 according to the present invention;
FIG. 6 is a schematic side sectional view of step S2 of the present invention;
FIG. 7 is a schematic side sectional view of step S3 according to the present invention;
FIG. 8 is a schematic side sectional view of step S4 according to the present invention;
FIG. 9 is a schematic side sectional view of step S5 of the present invention.
In the figure: 1. a transparent display area; 2. an active light emitting region; 3. a screen down camera; 4. a glass substrate; 5. a TFT thin film transistor array layer; 6. a pixel defining layer; 7. a cathode layer; 71. a cathode layer of an effective light emitting region; 72. a transparent display area cathode layer; 8. a thin film encapsulation layer; 81. a first inorganic layer; 82. an organic layer; 83. a second inorganic layer; 9. and (3) an OLED device layer.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The camera area on the front side of the mobile phone does not need to be perforated as before, and therefore the screen occupation ratio can be improved. When the camera is not used for taking a picture, the transparent display area 1 of the under-screen camera 3 can normally display a picture, the display effect of the under-screen camera is equivalent to that of the adjacent effective luminous area 2, and no obvious difference which can be felt by naked eyes exists;
when the camera is needed to shoot, external light can enter the bottom lens module (namely the camera 3 under the screen) through the transparent display area 1, and the imaging effect of the camera is greatly improved due to the improvement of the penetration rate.
Example 1: the utility model provides a display panel as shown in fig. 1-2, which comprises a transparent display area 1 of a camera 3 under a screen, an effective luminous area 2 and a glass substrate 4, wherein a TFT thin film transistor array layer 5 is arranged on the upper end surface of the glass substrate 4;
the TFT thin film transistor array layer 5 comprises a barrier layer, a buffer layer, a semiconductor channel layer, a gate circuit, a source-drain electrode circuit, a planarization layer, an anode layer and other structures (not shown in the figure); the OLED is used as a driving source of an OLED device, when a certain voltage is applied between the anode of the TFT and the cathode of the OLED, the OLED can emit light, and the display of a picture is controlled by the circuit driving control of the TFT;
the upper end surface of the TFT thin film transistor array layer 5 is provided with a pixel defining layer 6, the pixel defining layer 6 is provided with an OLED device layer 9, namely an RGB OLED device structure, and the OLED device structure generally comprises a hole injection layer, a hole transport layer, an RGB light emitting layer, an electron injection layer and an electron transport layer (not shown in the figure);
a cathode layer 7 is arranged on the upper end surface of the pixel defining layer 6, and a thin film packaging layer 8 is arranged on the upper end surface of the cathode layer 7;
the cathode layer at the transparent display area 1 is a transparent display area cathode layer 72, and the cathode layer at the effective light emitting area 2 is an effective light emitting area cathode layer 71.
The thin film encapsulation layer 8 comprises a thin film encapsulation layer composed of a first inorganic layer 81, an organic layer 82 and a second inorganic layer 83 from bottom to top. The first inorganic layer 81 and the second inorganic layer 83 are mainly used for blocking the invasion of water vapor and protecting the device from being corroded by water and oxygen to cause device failure, the organic layer 82 is mainly used for improving the flatness of the first inorganic layer 81 and the second inorganic layer 83 and improving the defects of pinholes and the like, and the multilayer stacked structure of the thin film packaging layers is beneficial to realizing the requirements of flexible display nowadays.
The transparent display region cathode layer 72 and the effective light emitting region cathode layer 71 are made of the same material, the former cathode layer is generally made of Ag/Mg or other metals or alloys thereof, the preparation method is mainly an evaporation process, and the problems of low penetration rate and the like exist. The cathode layer in this embodiment is made of a novel material, and may be an annealed PAN nanofiber-reinforced graphene film, and the transparency (may be greater than 94%) of the magic wave is ensured by using the high conductivity and flexibility of graphene and the thermally treated PAN nanofiber mesh structure, so that the penetration rate and conductivity of the existing metal cathode structure are greatly improved. The novel material can also be a titanium oxide crystal film, a silk fibroin film and a nano coating of organic protonic acid HTB with a certain thickness coated on the surface of the flexible graphene, and can also achieve the purpose of improving the penetration rate and the conductivity.
The transparent display region cathode layer 72 and the effective light emitting region cathode layer 71 are made of the same material, and the transparent display region cathode layer and the effective light emitting region cathode layer 71 can be prepared in the same process, so that the process difficulty is reduced, and the material and development cost are saved. The preparation method can be chemical vapor deposition or ink-jet printing, the chemical vapor deposition process is mature, and the ink-jet printing saves the material utilization rate and has advantages.
As shown in fig. 4 to 9, a method for manufacturing a display panel specifically includes the following steps:
s1, preparing a TFT array layer, namely a TFT thin film transistor array layer 5, on the flexible substrate or the glass substrate 4;
s2, preparing a pixel defining layer 6 on the TFT thin film transistor array layer 5, wherein the pixel defining layer 6 defines an OLED device preparation area;
s3, preparing an OLED device layer 9, mainly comprising: a hole injection layer, a hole transport layer, an RGB light emitting layer, an electron injection layer, an electron transport layer, and the like;
s4, preparing a cathode layer on the pixel defining layer 6,
s5, preparing a film packaging layer consisting of a first inorganic layer 81, an organic layer 82 and a second inorganic layer 83 on the cathode layer.
Example 2: the utility model provides a display panel as shown in fig. 1 and 3, which comprises a transparent display area 1 of a camera 3 under a screen, an effective light emitting area 2 and a glass substrate 4, wherein the upper end surface of the glass substrate 4 is provided with a TFT (thin film transistor) array layer 5, the upper end surface of the TFT array layer 5 is provided with a pixel definition layer 6, the pixel definition layer 6 is provided with an OLED (organic light emitting diode) device layer 9, the upper end surface of the pixel definition layer 6 is provided with a cathode layer, and the upper end surface of the cathode layer 7 is provided with a thin film packaging layer 8; the cathode layer at the transparent display area 1 is a transparent display area cathode layer 72, and the cathode layer at the effective light emitting area 2 is an effective light emitting area cathode layer 71.
The thin film encapsulation layer 8 comprises a thin film encapsulation layer composed of a first inorganic layer 81, an organic layer 82 and a second inorganic layer 83 from bottom to top.
The material of the transparent display area cathode layer 72 is different from that of the effective light emitting area cathode layer 71, the transparent display area cathode layer 72 can be a PAN nanofiber reinforced graphene film, a titanium oxide crystal film, a silk fibroin film and a nano-coating of organic protonic acid HTB coated with a certain thickness on the surface of flexible graphene, the effective light emitting area cathode layer 71 still adopts the existing metal cathode, the resistivity of the metal cathode is reduced, and the display uniformity of the area is improved.
As shown in fig. 4 to 8, a method for manufacturing a display panel specifically includes the following steps:
s1, preparing a TFT array layer, namely a TFT thin film transistor array layer 5, on the flexible substrate or the glass substrate 4;
s2, preparing a pixel defining layer 6 on the TFT thin film transistor array layer 5, wherein the pixel defining layer 6 defines an OLED device preparation area;
s3, preparing an OLED device layer 9, mainly comprising: a hole injection layer, a hole transport layer, an RGB light emitting layer, an electron injection layer, an electron transport layer, and the like;
s4, preparing a cathode layer on the pixel defining layer 6,
s5, preparing a film packaging layer consisting of a first inorganic layer 81, an organic layer 82 and a second inorganic layer 83 on the cathode layer.
In summary, compared with the prior art, the display panel of the utility model changes the mechanism of the existing metal cathode layer, and adopts the novel material which has higher penetration rate and flexibility and can improve the conductive effect, thereby greatly improving the problems of lower penetration rate, poor display or poor photographic imaging in the existing under-screen camera technology.
The utility model also provides a preparation method of the display panel, and by the structure and the method, the problem of low penetration rate of the transparent display area of the existing under-screen camera can be greatly improved.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments or portions thereof without departing from the spirit and scope of the utility model.

Claims (4)

1. The utility model provides a display panel, includes transparent display area (1), the effective luminous zone (2) and glass substrate (4) of camera (3) under the screen, its characterized in that: the upper end surface of the glass substrate (4) is provided with a TFT thin film transistor array layer (5), the upper end surface of the TFT thin film transistor array layer (5) is provided with a pixel definition layer (6), the pixel definition layer (6) is provided with an OLED device layer (9), the upper end surface of the pixel definition layer (6) is provided with a cathode layer (7), and the upper end surface of the cathode layer (7) is provided with a thin film packaging layer (8); the cathode layer (7) at the transparent display area (1) is a transparent display area cathode layer (72), and the cathode layer at the effective light emitting area (2) is an effective light emitting area cathode layer (71).
2. A display panel according to claim 1, characterized in that: the thin film packaging layer (8) comprises a thin film packaging layer consisting of a first inorganic layer (81), an organic layer (82) and a second inorganic layer (83) from bottom to top.
3. A display panel according to claim 1, characterized in that: the transparent display area cathode layer (7) and the effective light emitting area cathode layer (71) are made of the same material, and are all annealed PAN nanofiber reinforced graphene films, titanium oxide crystal films, silk fibroin films or nano coatings of organic protonic acid HTB coated on the surface of flexible graphene.
4. A display panel according to claim 1, characterized in that: the material of the transparent display area cathode layer (7) is different from that of the effective light emitting area cathode layer (71), the material of the transparent display area cathode layer (7) is an annealed PAN nanofiber reinforced graphene film, a titanium oxide crystal film, a silk fibroin film or a nano coating formed by coating organic protonic acid HTB on the surface of flexible graphene, and the material of the effective light emitting area cathode layer (71) is metal.
CN202122350495.9U 2021-09-27 2021-09-27 Display panel Active CN215896442U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202122350495.9U CN215896442U (en) 2021-09-27 2021-09-27 Display panel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202122350495.9U CN215896442U (en) 2021-09-27 2021-09-27 Display panel

Publications (1)

Publication Number Publication Date
CN215896442U true CN215896442U (en) 2022-02-22

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Country Link
CN (1) CN215896442U (en)

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