CN215896402U

CN215896402U - Display device structure

Info

Publication number: CN215896402U
Application number: CN202122248455.3U
Authority: CN
Inventors: 骆丽兵; 吴聪原
Original assignee: Fujian Huajiacai Co Ltd
Current assignee: Fujian Huajiacai Co Ltd
Priority date: 2021-09-16
Filing date: 2021-09-16
Publication date: 2022-02-22
Anticipated expiration: 2031-09-16

Abstract

The utility model discloses a display device structure, which comprises a substrate, wherein a TFT (thin film transistor) driving circuit is arranged on the substrate, and an OLED light-emitting device is arranged on the TFT driving circuit through an OLED light-emitting device in an evaporation way; forming a preposed camera device reservation module at the upper end of the substrate after a TFT and OLED evaporation process; the substrate is sequentially provided with a first inorganic sealing layer, an organic buffer layer and a second inorganic sealing layer; a camera opening is etched in the middle of the reserved module of the front camera device, the rest part is a reserved part of the reserved module of the front camera device, and the area of the reserved part accounts for one eighth of the whole reserved module of the front camera device. According to the utility model, a camera mounting channel is not required to be formed in a physical hole digging mode, and the damage to the packaging film when the front camera is physically dug in the display device is avoided, so that the phenomenon of a gourd screen or other abnormal packaging failures is avoided, and the stability and the service life of the full-screen mobile phone in the use process are improved.

Description

Display device structure

Technical Field

The utility model belongs to the technical field of display screens, and particularly relates to a display device structure.

Background

Nowadays, the screen of the mainstream mobile phone pursues the ultra-high screen ratio, which is almost close to 100%, that is, a full-screen mobile phone in the family is a wider definition for the ultra-high screen ratio mobile phone design in the mobile phone industry. The explanation is that the front of the mobile phone is a screen, the four frame positions of the mobile phone are designed without frames, the screen occupation ratio is close to 100%, the technology of a camera under the screen is not greatly broken through, so the mobile phone is not formally popularized and used, and the hole digging technology is combined with the AMOLED display screen technology to manufacture an ultrathin flexible high-screen occupation ratio screen, which is the mainstream technical scheme of the mobile phone screen at present.

Dig hole screen technique, as the name implies, dig out the camera passageway in screen side camera position for leading camera is made a video recording and is used, and this position is not used for showing, so dig the hole diameter and require to minimize as far as possible, reduce the influence to screen display effect. The AMOLED display screen is a self-luminous display mode through organic materials, and the organic self-luminous materials are extremely sensitive to water and oxygen, so that once water and oxygen invade the interior of the display screen, pixel points inside the display screen can be in failure in reaction with the water and oxygen, and black points appear, however, a hole digging technology (generally adopting laser cutting) can damage an AMOLED display screen packaging film layer in the implementation process, and the service stability and the service life of a display device are greatly influenced.

At present, the mainstream packaging mode of the AMOLED display screen adopts multilayer film stack packaging, a weak point of a packaging film layer at the position is easily caused when a hole is dug at the position of a front camera, in the using process of subsequent products, a user carelessly extrudes the weak point to inevitably cause a larger gap at the weak point, so that water and oxygen invade to a pixel point near the front camera from the weak point, the pixel point is failed, the common calabash screen phenomenon of a big family is caused, the phenomenon continues to extend in the subsequent process, the water and oxygen continue to invade, and finally the whole screen is failed. To this end, we propose a display device structure to solve the above mentioned problems in the background art.

SUMMERY OF THE UTILITY MODEL

The present invention is directed to a display device structure to solve the above problems.

In order to achieve the purpose, the utility model provides the following technical scheme: a display device structure comprises a substrate, wherein a TFT drive circuit is arranged on the substrate, and an OLED light-emitting device is arranged on the TFT drive circuit through an OLED light-emitting device evaporation coating;

forming a preposed camera device reserved module at the upper end of the substrate after a TFT and OLED evaporation process;

the substrate is sequentially provided with a first inorganic sealing layer, an organic buffer layer and a second inorganic sealing layer;

the middle part of the reserved module of the front camera device is etched to form a camera opening, the rest part of the reserved module of the front camera device is a reserved part of the reserved module of the front camera device, and the area of the reserved part accounts for one eighth of the whole reserved module of the front camera device.

The substrate is a flexible plastic substrate or a hard glass substrate, the thickness of a film layer of the substrate is 0.30-0.40mm, the flexible plastic substrate is made of polyimide, polyethylene terephthalate, polyethylene naphthalate or polycarbonate, and the hard glass substrate is made of silica glass.

IGZO is selected as the TFT drive circuit material, and the thickness of a TFT circuit film layer of the TFT drive circuit is 4.00-4.20 um.

The OLED light-emitting device is formed by evaporating the organic light-emitting material and the electrode material in an evaporation mode, and the thickness of a film layer of the OLED light-emitting device is 0.30-0.35 um.

The first non-sealing layer is generated by adopting a plasma enhanced chemical vapor deposition or plasma enhanced atomic deposition mode, the first non-sealing layer is made of silicon nitride or silicon oxide, and the thickness of the film layer of the first non-sealing layer is 0.20-0.25 um.

The organic buffer layer is generated by adopting an ink-jet printing technology, the material of the organic buffer layer is organic polymer, the organic polymer is any one of polymethyl methacrylate, polyvinylidene chloride or polyethylene naphthalate, and the film thickness of the organic buffer layer is 0.18-0.20 um.

The second inorganic sealing layer is generated in a plasma enhanced chemical vapor deposition or plasma enhanced atomic deposition mode, the second inorganic sealing layer is made of silicon nitride or silicon oxide, and the thickness of the film layer of the second inorganic sealing layer is 0.25-0.30 um.

A preparation method of a display device structure specifically comprises the following steps:

s1, providing a substrate, forming a TFT drive circuit on the substrate, and carrying out evaporation on the OLED light-emitting device on the TFT drive circuit to form the OLED light-emitting device;

s2, forming a front camera device reservation module at the front camera position of the substrate;

s3, sequentially arranging a first inorganic sealing layer, an organic buffer layer and a second inorganic sealing layer on the substrate;

and S4, finally, etching an actual opening of the front camera device, namely a camera opening, on the front camera device reservation module.

Compared with the prior art, the utility model has the beneficial effects that: according to the display device structure, the reserved module of the front camera device is set in advance, the reserved module is etched at the later stage to form the camera opening for mounting the front camera, the situation that an encapsulation film layer near the front camera is physically damaged or chemically acted is avoided, the encapsulation film layer is greatly protected, the problem of encapsulation film failure of the front camera due to hole digging can be effectively solved, and the stability and the service life of a full-face screen mobile phone in the using process are improved.

Need not to dig the mode in hole (like laser cutting) through the physics and form camera installation passageway (be the camera opening), avoid carrying on leading camera physics at display device and dig the destruction of hole time to the encapsulation film to avoid calabash screen phenomenon or other encapsulation inefficacy unusual appearances, promote the stability and the life-span of comprehensive screen cell-phone (incomplete meaning full screen, including leading camera) in the use.

Drawings

Fig. 1 is a schematic structural view of a connection between a pre-camera device reservation module and a substrate according to the present invention;

FIG. 2 is a schematic cross-sectional view of a display device structure according to the present invention;

FIG. 3 is a schematic diagram of a cross-sectional structure of an actual opening of a pre-camera device pre-reserved module according to the present invention;

FIG. 4 is a schematic top view of the actual opening and the reserved portion of the reserved module of the front camera device according to the present invention;

FIG. 5 is a schematic flow chart of a method for fabricating a display device structure according to the present invention.

In the figure: 1. a front camera device reservation module; 11. a reserved portion; 12. a camera opening; 2. a TFT drive circuit; 3. an OLED light emitting device; 4. a first non-confidential sealing layer; 5. an organic buffer layer; 6. a second inorganic sealing layer; 7. a substrate.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

The utility model provides a display device structure as shown in figures 1-4, which comprises a substrate 7, wherein a TFT drive circuit 2 is arranged on the substrate 7, and an OLED light-emitting device 3 is arranged on the TFT drive circuit 2 through an OLED light-emitting device evaporation coating;

the upper end of the substrate 7 forms a preposed camera device reserved module 1 after a TFT and OLED evaporation process;

the middle part of the preposed camera device reserved module 1 is etched to form a camera opening 12, the rest part is a reserved part 11 of the preposed camera device reserved module 1, the area of the reserved part 11 accounts for one eighth of the whole preposed camera device reserved module 1, and the reserved part 11 is used for avoiding direct contact of an etching solution to a packaging film in the etching process and avoiding influence on the packaging effect of the position due to chemical damage of the packaging film.

The pre-camera device reservation module 1 is formed after the substrate 7 finishes the TFT and OLED evaporation process, a position is reserved for the pre-camera in advance, a camera opening 12 is etched in the pre-camera device reservation module 1 in a later stage in an etching mode, and the camera opening 12 is used for a channel used by the normal function of the pre-camera;

the problem of cracking failure of a packaging film caused by physical perforation (laser cutting) is solved, a specific reserved area and a shape are set according to different requirements of display screen cameras (a round reserved module is taken as an example in the utility model), the packaging film is formed by a mode of needle head single-point position coating, each screen is coated independently/coated integrally in a scraper mode, and the whole large plate is coated (the position of a reserved module 1 of a non-front camera device needs to be shielded), polyimide is selected as a material, and the thickness of the module is from the surface of a substrate to the uppermost layer of film packaging;

the substrate 7 is sequentially provided with a first inorganic sealing layer 4, an organic buffer layer 5 and a second inorganic sealing layer 6;

the substrate 7 is a flexible plastic substrate or a hard glass substrate, the thickness of a film layer of the substrate is 0.30-0.40mm, the flexible plastic substrate is made of polyimide, polyethylene terephthalate, polyethylene naphthalate or polycarbonate, and the hard glass substrate is made of silica glass.

IGZO is selected as the material of the TFT drive circuit 2, and the thickness of a TFT circuit film layer of the TFT drive circuit 2 is 4.00-4.20 um.

The OLED light-emitting device 3 is formed by evaporating the organic light-emitting material and the electrode material in an evaporating mode, and the thickness of a film layer of the OLED light-emitting device 3 is 0.30-0.35 um.

The first non-sealing layer 4 is generated by adopting a plasma enhanced chemical vapor deposition or plasma enhanced atomic deposition mode, the first non-sealing layer 4 is made of silicon nitride or silicon oxide, and the thickness of the film layer of the first non-sealing layer 4 is 0.20-0.25 um.

The first inorganic sealing layer 4 has a sealing effect and is used for blocking water and oxygen, so that the OLED light-emitting device 3 is protected;

the organic buffer layer 5 is generated by adopting an ink-jet printing technology, the material of the organic buffer layer 5 is organic polymer, the organic polymer is any one of polymethyl methacrylate, polyvinylidene chloride or polyethylene naphthalate, and the film thickness of the organic buffer layer 5 is 0.18-0.20 um.

The organic buffer layer 5 has a buffer effect and is used for releasing the stress of the thin film package and can also have a planarization effect on the thin film package, so that the package structure is more reliable and complete;

the second inorganic sealing layer 6 is generated by adopting a plasma enhanced chemical vapor deposition or plasma enhanced atomic deposition mode, the material of the second inorganic sealing layer 6 is silicon nitride or silicon oxide, and the thickness of the film layer of the second inorganic sealing layer 6 is 0.25-0.30 um.

The second inorganic sealing layer 6 plays a role of reinforcing protection of the OLED light emitting device 3.

In order to solve the problem of failure of a packaging film when a front camera hole digging process (physical hole digging-laser cutting) is carried out on a screen, the utility model is designed without forming a camera mounting channel (namely the camera opening 12) in a physical (laser cutting) hole digging mode.

The method comprises the steps that a front camera device reserved module 1 is arranged at the position of a front camera in advance, the reserved module is arranged at the substrate preparation stage (after evaporation is completed), the camera installation position is etched out through the etching process at the later stage, and the outer ring part of the reserved module is reserved when the camera device reserved module is etched, so that the packaging film layer near the camera is protected.

The packaging film layer near the camera cannot be physically influenced, the mask is used in the etching process to shield the packaging film layer, the packaging film layer cannot be chemically damaged, the packaging film layer is greatly protected, and the problem of failure of the packaging film of the front camera due to hole digging can be effectively solved.

The utility model provides a preparation method of a display device structure shown in fig. 5, which specifically comprises the following steps:

s1, providing a substrate 7, forming a TFT drive circuit 2 on the substrate 7, and carrying out evaporation on an OLED light-emitting device on the TFT drive circuit 2 to form an OLED light-emitting device 3;

s2, forming a front camera device reservation module 1 at the front camera position of the substrate 7;

s3, sequentially disposing the first inorganic sealing layer 4, the organic buffer layer 5, and the second inorganic sealing layer 6 on the substrate 7;

and S4, finally, etching an actual opening of the front camera device, namely the camera opening 12, on the front camera device reservation module 1.

It should be noted that, in the display device structure, each process in the preparation process is required to shield the position of the pre-camera device reservation module 1, and because the position is fixed, only one mask is required to shield the pre-camera device reservation module 1, and other films or materials (as shown in fig. 2) cannot be formed above and below the pre-camera device reservation module 1, otherwise, inconvenience may be caused when the actual opening is etched and processed in the later period.

In summary, compared with the prior art, the camera opening 12 for installing the front camera is formed by setting the reserved module 1 of the front camera device in advance and etching the reserved module at the later stage, so that the situation that the packaging film layer near the front camera is physically damaged (cracks caused by laser cutting) or chemically acted is avoided, the packaging film layer is greatly protected, the problem of failure of the packaging film of the front camera due to hole digging can be effectively solved, and the stability and the service life of a full-screen mobile phone (a non-full-screen mobile phone with the front camera) in the using process are improved.

Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments or portions thereof without departing from the spirit and scope of the utility model.

Claims

1. A display device structure comprising a substrate (7), characterized in that: the substrate (7) is provided with a TFT drive circuit (2), and the TFT drive circuit (2) is provided with an OLED light-emitting device (3) through an OLED light-emitting device evaporation coating;

the upper end of the substrate (7) forms a preposed camera device reserved module (1) after a TFT and OLED evaporation process;

the substrate (7) is sequentially provided with a first inorganic sealing layer (4), an organic buffer layer (5) and a second inorganic sealing layer (6);

the camera device is characterized in that a camera opening (12) is etched in the middle of the front camera device reserved module (1), the rest part is a reserved part (11) of the front camera device reserved module (1), and the area of the reserved part (11) accounts for one eighth of the whole area of the front camera device reserved module (1).

2. A display device structure according to claim 1, wherein: the substrate (7) is a flexible plastic substrate or a hard glass substrate, the thickness of a film layer of the substrate is 0.30-0.40mm, the flexible plastic substrate is made of polyimide, polyethylene terephthalate, polyethylene naphthalate or polycarbonate, and the hard glass substrate is made of silica glass.

3. A display device structure according to claim 1, wherein: IGZO is selected as the material of the TFT drive circuit (2), and the thickness of a TFT circuit film layer of the TFT drive circuit (2) is 4.00-4.20 um.

4. A display device structure according to claim 1, wherein: the OLED light-emitting device (3) is formed by evaporating an organic light-emitting material and an electrode material in an evaporation mode, and the thickness of a film layer of the OLED light-emitting device (3) is 0.30-0.35 um.

5. A display device structure according to claim 1, wherein: the first non-sealing layer (4) is generated by adopting a plasma enhanced chemical vapor deposition or plasma enhanced atomic deposition mode, the first non-sealing layer (4) is made of silicon nitride or silicon oxide, and the thickness of the film layer of the first non-sealing layer (4) is 0.20-0.25 um.

6. A display device structure according to claim 1, wherein: the organic buffer layer (5) is generated by adopting an ink-jet printing technology, the material of the organic buffer layer (5) is organic polymer, the organic polymer is any one of polymethyl methacrylate, polyvinylidene chloride or polyethylene naphthalate, and the film thickness of the organic buffer layer (5) is 0.18-0.20 um.

7. A display device structure according to claim 1, wherein: the second inorganic sealing layer (6) is generated in a plasma enhanced chemical vapor deposition or plasma enhanced atomic deposition mode, the second inorganic sealing layer (6) is made of silicon nitride or silicon oxide, and the thickness of the film layer of the second inorganic sealing layer (6) is 0.25-0.30 um.