CN215783248U - Production control device of fluidized bed reactor - Google Patents
Production control device of fluidized bed reactor Download PDFInfo
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- CN215783248U CN215783248U CN202121140419.9U CN202121140419U CN215783248U CN 215783248 U CN215783248 U CN 215783248U CN 202121140419 U CN202121140419 U CN 202121140419U CN 215783248 U CN215783248 U CN 215783248U
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Abstract
The utility model discloses a production control device of a fluidized bed reactor, which comprises at least one top temperature measuring rod and at least one bottom temperature measuring rod with temperature measuring points, wherein the top temperature measuring rod and the bottom temperature measuring rod respectively extend into a preset height position from the top and the bottom of the fluidized bed reactor; a discharging control valve is arranged between the hopper and the seed crystal feeding pipeline, and the seed crystal feeding pipeline extends into the fluidized bed reactor; and respectively obtaining the top temperature and the bottom temperature through at least one top temperature measuring rod and at least one bottom temperature measuring rod with temperature measuring points, and further controlling a blanking control valve according to the temperature difference between the top temperature and the bottom temperature so as to enable the seed crystals in the hopper to be added into the fluidized bed reactor through a seed crystal feeding pipeline. The embodiment can solve the problem that stable production in a fluidized way cannot be realized well in the prior art.
Description
Technical Field
The utility model relates to the technical field of fluidized bed production of granular silicon, in particular to a production control device of a fluidized bed reactor.
Background
The fluidized bed production technology of granular silicon has great advantages in all aspects, the fluidized bed reactor provides much higher yield with smaller energy consumption, can meet the requirement of continuous production, and the product specification can reach the solar grade or the electronic grade, and can meet the requirements of downstream industries. When granular polysilicon is produced by a fluidized bed, polysilicon fine particles (seed crystals) are added into a fluidized bed reactor, and chemical vapor deposition is carried out on the surfaces of the seed crystals, so that the seed crystals grow into nearly spherical particles with larger sizes. Continuously producing larger particles and continuously adding seed crystals in the production process so as to realize continuous industrial production.
In the process of implementing the utility model, the added amount of the seed crystals influences the fluidization degree of the fluidized bed to a certain extent in the continuous production process of the conventional fluidized bed reactor. At present, the existing seed crystal blanking mode of the fluidized bed is only added into the fluidized bed reactor continuously or intermittently, and the seed crystal adding amount cannot be determined according to the actual demand, so that stable control of fluidization cannot be realized well.
SUMMERY OF THE UTILITY MODEL
In view of this, the embodiment of the present invention provides a production control device for a fluidized bed reactor, which can solve the problem that stable production in a fluidized state cannot be realized well in the prior art.
In order to achieve the above object, according to an embodiment of the present invention, there is provided a production control device for a fluidized bed reactor, including at least one top temperature measuring rod and at least one bottom temperature measuring rod with temperature measuring points, an external heater, a hopper, a feeding control valve, and a seed crystal feeding pipeline;
wherein, at least one top temperature measuring rod and at least one bottom temperature measuring rod with temperature measuring points respectively extend into the position of a preset height from the top and the bottom of the fluidized bed reactor, and an external heater is arranged on the outer wall of the fluidized bed reactor; a discharging control valve is arranged between the hopper and the seed crystal feeding pipeline, and the seed crystal feeding pipeline extends into the fluidized bed reactor;
and respectively obtaining the top temperature and the bottom temperature through at least one top temperature measuring rod and at least one bottom temperature measuring rod with temperature measuring points, and further controlling a blanking control valve according to the temperature difference between the top temperature and the bottom temperature so as to enable the seed crystals in the hopper to be added into the fluidized bed reactor through a seed crystal feeding pipeline.
Optionally, comprising: and calculating the difference between the temperature difference between the top temperature and the bottom temperature and a preset target temperature difference, determining a corresponding target blanking rate according to the calculation result, calculating the difference between the actual blanking rate and the target blanking rate, and controlling blanking of the hopper through the valve position opening of the blanking control valve.
Optionally, comprising: the hopper is provided with a level indicator.
Optionally, comprising: the bottom temperature measuring rod and the top temperature measuring rod are arranged in the form of an inserted thermocouple thermometer or a surface thermocouple thermometer;
if the bottom temperature measuring rod is a plug-in thermocouple thermometer, the height of the bottom temperature measuring rod extending into the bottom of the fluidized bed reactor is not more than the height of the silane gas inlet nozzle, and if the bottom temperature measuring rod is a surface thermocouple thermometer, the bottom temperature measuring rod extends into all height positions of the fluidized bed reactor.
Optionally, comprising: the material of the hopper comprises carbon steel or stainless steel, and the inner surface of the hopper is provided with a coating.
Optionally, comprising: the seed crystal feeding pipeline is internally provided with a protective sleeve.
Optionally, comprising: the protective sleeve is a hard alloy sleeve, and the outer surface of the protective sleeve is provided with a protective coating.
Optionally, comprising: the thickness of the protective sleeve is 8 mm-10 mm.
Optionally, comprising: the inner wall of the seed crystal feeding pipeline is tightly attached to the protective sleeve, and the sleeve is designed to be connected in sections.
Optionally, comprising: the top temperature measuring rod and the bottom temperature measuring rod are respectively provided with at least one temperature measuring point, and the position of each temperature measuring point is different.
An embodiment in the above-mentioned utility model has following advantage or beneficial effect: according to the utility model, the fluidized state is represented by the temperature difference between the top and the bottom of the fluidized bed reactor layer, and the temperature difference is used as a cascade control condition to control the seed crystal blanking, so that the stable control of the fluidized state of the fluidized bed reactor is realized, namely, the seed crystals are added according to the actual demand, so that the stable control of the fluidized state can be realized, and the effects of prolonging the operation time of the fluidized bed reactor and improving the productivity are achieved.
Further effects of the above-mentioned non-conventional alternatives will be described below in connection with the embodiments.
Drawings
The drawings are included to provide a better understanding of the utility model and are not to be construed as unduly limiting the utility model. Wherein:
FIG. 1 is a schematic configuration diagram of a production control apparatus of a fluidized bed reactor according to an embodiment of the present invention;
fig. 2 is a schematic diagram of seeding control logic according to an embodiment of the utility model.
Detailed Description
Exemplary embodiments of the present invention are described below with reference to the accompanying drawings, in which various details of embodiments of the utility model are included to assist understanding, and which are to be considered as merely exemplary. Accordingly, those of ordinary skill in the art will recognize that various changes and modifications of the embodiments described herein can be made without departing from the scope and spirit of the utility model. Also, descriptions of well-known functions and constructions are omitted in the following description for clarity and conciseness.
Some embodiments of the present invention provide a fluidized bed reactor production control device, as shown in fig. 1, comprising an external heater 2, at least one top temperature measuring rod 3, at least one bottom temperature measuring rod 4, a temperature measuring point 5, a seed crystal feeding pipe 6, a blanking control valve 7, and a hopper 8.
In the embodiment, at least one top temperature measuring rod 3 and at least one bottom temperature measuring rod 4 with temperature measuring points 5 respectively extend from the top and the bottom of the fluidized bed reactor 1 to preset height positions. Preferably, the bottom thermo-well 4 and the top thermo-well 3 are installed in the form of a plug-in thermocouple thermometer or a surface thermocouple thermometer. Further, if the bottom temperature measuring rod 4 is a plug-in thermocouple thermometer, the height of the bottom temperature measuring rod extending into the bed layer of the fluidized bed reactor 1 is not more than the height of the silane gas inlet nozzle, and if the bottom temperature measuring rod 4 is a surface thermocouple thermometer, the bottom temperature measuring rod extends into all height positions of the fluidized bed reactor 1.
Also, an external heater 2 is installed on the outer wall of the fluidized-bed reactor 1. A blanking control valve 7 is arranged between the hopper 8 and the seed crystal feeding pipeline 6, and the seed crystal feeding pipeline 6 extends into the fluidized bed reactor 1. Preferably, the material of the hopper 8 comprises carbon steel or stainless steel, and the inner surface is coated. Wherein the coating comprises quartz, silicon, low nickel alloy, cobalt alloy, silicon nitride, graphite, silicon carbide, molybdenum, or molybdenum alloy. It should be noted that the hopper 8 may also be provided with a level gauge 9 for checking the amount of seed crystals in the hopper 8.
As an embodiment, the top temperature and the bottom temperature are respectively obtained by at least one top temperature measuring rod 3 and at least one bottom temperature measuring rod 4 with temperature measuring points 5, and then the blanking control valve 7 is controlled according to the temperature difference between the top temperature and the bottom temperature, so that the seed crystals in the hopper 8 are added into the fluidized bed reactor 1 through the seed crystal feeding pipeline 6. Further, the difference between the temperature difference between the top temperature and the bottom temperature and a preset target temperature difference is calculated, so that a corresponding target feeding rate is determined according to the calculation result, the difference between the actual feeding rate and the target feeding rate is calculated, and feeding of the hopper 8 is controlled through the valve position opening of the feeding control valve 7.
Specifically, as shown in fig. 2, the amount of change in the level of the hopper 8 per unit time reflects the seed crystal feed rate (PV2), and a certain feed rate is controlled by giving a flow control valve set value (SV 2). Wherein, the Temperature Difference (TD) between the temperature measuring point of the temperature measuring rod 3 at the top and the temperature measuring point of the temperature measuring rod 4 at the bottom of the fluidized bed reactor 1 is used as the control condition of the main loop. After the target temperature difference (SV1) is set, the main loop controller target temperature difference (SV1) is differentiated from the actual temperature difference (PV1), which may be defined as e1 ═ td (SV) -td (PV), and the output of the main controller is u 1. The secondary circuit controls the blanking rate through the valve position opening of the blanking control valve 7. u1 is used as a set value u1 of the sub controller which is SV2 and is defined as e2 different from the actual feeding rate, and the opening u2 of the feeding control valve 7 is adjusted through e2 so as to control seed crystal feeding. When the seed crystal addition is increased or decreased, the average particle size of the bed layer can be changed, and the fluidization degree can be changed under the condition of constant apparent gas velocity. Therefore, the temperature difference control seed crystal blanking can effectively control the fluidization state of the reactor under the condition of constant apparent gas velocity, and the continuous production of the fluidized bed under the stable fluidization state is ensured.
As other examples, the seed crystal feeding pipe 6 has a protective sleeve inside, which may be a carbide sleeve, and the length of the protective sleeve is required to extend into the fluidized bed layer. Preferably, the material of the protective sleeve may include more than 18% of chromium and more than 8% of nickel. Wherein the alloy comprises a 304 series stainless steel, a low nickel alloy, a nickel alloy, an Incoloy alloy, a cobalt alloy, an ULTIMET alloy, or a molybdenum alloy. In addition, the protective sleeve has a thickness of 8-10 mm, and may comprise quartz, silicon nitride, graphite or silicon carbide
Preferably, the outer surface of the protective sleeve has a protective coating, preferably having a thickness in the range of 0.2 mm to 0.9 mm.
It is worth mentioning that the inner wall of the seed crystal feeding pipe 6 is tightly attached to the protective sleeve, and the sleeve can be designed to be connected in sections.
As still other embodiments, each top temperature measuring rod 3 and each bottom temperature measuring rod 4 are respectively provided with at least one temperature measuring point 5, and the positions of the temperature measuring points 5 are different. That is, the utility model is not limited to single temperature difference control, the top and the bottom of the fluidized bed reactor 1 can be provided with a plurality of temperature measuring rods which extend into the bed layer, each temperature measuring rod can be provided with a plurality of temperature measuring points, and seed crystal blanking can be controlled through different temperature differences of the temperature measuring points at different positions. Therefore, the temperature difference control of the utility model includes not limited to the temperature difference of two points, and the temperature difference of different heights of the fluidized bed reactor 1 can be used as a control condition to control seed crystal blanking.
It can be seen that there are multiple temperature measuring rods penetrating into the bed layer at the top and bottom of the fluidized bed reactor 1, respectively, and the seed crystal blanking is controlled by the temperature difference between the top and bottom. The granular silicon is fluidized in the fluidized bed reactor 1 and fully exchanges heat with the heater, the heated granular silicon brings heat below a heating zone, and the temperature of a multipoint temperature measuring rod at the bottom of the reactor, which is deep into a bed layer, is increased. This indicates that the particles inside the fluidized-bed reactor 1 are in a certain fluidized state. The degree of fluidization depends on the temperature measured at the bottom of the reactor, and the higher the temperature, the stronger the fluidization inside is, the more heat will be brought to the heating zone. When the inside of the fluidized bed is in a stable fluidized state, the temperature difference between the top part of the fluidized bed, which is positioned in the radiation zone, and the bottom part of the fluidized bed is kept unchanged.
The above-described embodiments should not be construed as limiting the scope of the utility model. Those skilled in the art will appreciate that various modifications, combinations, sub-combinations, and substitutions can occur, depending on design requirements and other factors. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (8)
1. A production control device of a fluidized bed reactor is characterized by comprising at least one top temperature measuring rod and at least one bottom temperature measuring rod with temperature measuring points, an external heater, a hopper, a discharging control valve and a seed crystal feeding pipeline;
wherein, at least one top temperature measuring rod and at least one bottom temperature measuring rod with temperature measuring points respectively extend into the position of a preset height from the top and the bottom of the fluidized bed reactor, and an external heater is arranged on the outer wall of the fluidized bed reactor; a discharging control valve is arranged between the hopper and the seed crystal feeding pipeline, and the seed crystal feeding pipeline extends into the fluidized bed reactor;
and respectively obtaining the top temperature and the bottom temperature through at least one top temperature measuring rod and at least one bottom temperature measuring rod with temperature measuring points, and further controlling a blanking control valve according to the temperature difference between the top temperature and the bottom temperature so as to enable the seed crystals in the hopper to be added into the fluidized bed reactor through a seed crystal feeding pipeline.
2. The fluidized bed reactor production control device according to claim 1, characterized by comprising: the hopper is provided with a level indicator.
3. The fluidized bed reactor production control device according to claim 1, characterized by comprising: the bottom temperature measuring rod and the top temperature measuring rod are arranged in the form of an inserted thermocouple thermometer or a surface thermocouple thermometer;
if the bottom temperature measuring rod is a plug-in thermocouple thermometer, the height of the bottom temperature measuring rod extending into the bottom of the fluidized bed reactor is not more than the height of the silane gas inlet nozzle, and if the bottom temperature measuring rod is a surface thermocouple thermometer, the bottom temperature measuring rod extends into all height positions of the fluidized bed reactor.
4. The fluidized bed reactor production control device according to claim 1, characterized by comprising: the material of the hopper comprises carbon steel or stainless steel, and the inner surface of the hopper is provided with a coating.
5. The fluidized bed reactor production control device according to claim 1, characterized by comprising: the seed crystal feeding pipeline is internally provided with a protective sleeve.
6. The fluidized bed reactor production control device according to claim 1, characterized by comprising: the protective sleeve is a hard alloy sleeve, and the outer surface of the protective sleeve is provided with a protective coating.
7. The fluidized bed reactor production control apparatus according to claim 5, characterized by comprising: the thickness of the protective sleeve is 8 mm-10 mm.
8. The fluidized bed reactor production control apparatus according to claim 5, characterized by comprising: the inner wall of the seed crystal feeding pipeline is tightly attached to the protective sleeve, and the sleeve is designed to be connected in sections.
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| CN202121140419.9U CN215783248U (en) | 2021-05-25 | 2021-05-25 | Production control device of fluidized bed reactor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115771896A (en) * | 2022-12-26 | 2023-03-10 | 宁夏润阳硅材料科技有限公司 | Production and reduction method of polycrystalline silicon and polycrystalline silicon |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115771896A (en) * | 2022-12-26 | 2023-03-10 | 宁夏润阳硅材料科技有限公司 | Production and reduction method of polycrystalline silicon and polycrystalline silicon |
| CN115771896B (en) * | 2022-12-26 | 2024-06-18 | 宁夏润阳硅材料科技有限公司 | Production reduction method of polycrystalline silicon and polycrystalline silicon |
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