CN215731698U - Three-phase full-bridge power integrated MOSFET module - Google Patents

Three-phase full-bridge power integrated MOSFET module Download PDF

Info

Publication number
CN215731698U
CN215731698U CN202121390488.5U CN202121390488U CN215731698U CN 215731698 U CN215731698 U CN 215731698U CN 202121390488 U CN202121390488 U CN 202121390488U CN 215731698 U CN215731698 U CN 215731698U
Authority
CN
China
Prior art keywords
base island
pin
lead
power
power tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202121390488.5U
Other languages
Chinese (zh)
Inventor
田鹏
于今
何剑
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
China Resources Microelectronics Chongqing Ltd
Original Assignee
China Resources Microelectronics Chongqing Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by China Resources Microelectronics Chongqing Ltd filed Critical China Resources Microelectronics Chongqing Ltd
Priority to CN202121390488.5U priority Critical patent/CN215731698U/en
Application granted granted Critical
Publication of CN215731698U publication Critical patent/CN215731698U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires

Landscapes

  • Inverter Devices (AREA)

Abstract

The utility model provides a three-phase full-bridge power integrated MOSFET module, comprising: the plastic package body comprises a power tube, a base island and a pin, wherein the power tube and the base island are arranged in the plastic package body; the source electrode and the grid electrode of each power tube are connected to the base island in a routing mode, and the drain electrode is electrically connected with the corresponding base island; and a three-phase full-bridge structure is realized through the electric connection of six power tubes. The utility model avoids the stress on the pin from being transmitted to the power tube bare chip, the thermal expansion coefficient of the lead is the same as or similar to the surface metal of the power tube bare chip, and the failure rate of the device is reduced; the integration level is high, the overall size of a finished product is small, the size of the radiating fin is reduced, the size of the controller is controlled, and the cost of the structural part is reduced; the length of a lead from each pole of the bare chip of the power tube to the exposed pin is shortened, so that parasitic inductance is reduced, and the electrical performance is improved; the unit heat dissipation volume is increased, so that the whole temperature rise is favorably controlled, and the electrical performance is improved; the exposed pin has high definition freedom degree, which is beneficial to PCB wiring.

Description

Three-phase full-bridge power integrated MOSFET module
Technical Field
The utility model relates to the field of semiconductor devices, in particular to a three-phase full-bridge power integrated MOSFET module.
Background
In an electric bicycle (e-bike), a MOS transistor full-bridge power module drives a three-phase motor to provide proper electric energy for the electric bicycle. The electric bicycle has the characteristic of low voltage and large current, the power device of the driving part of the traditional electric bicycle controller mainly adopts an independent single tube (a single power tube packaged into a chip), and multiple tubes are often needed to be combined into each bridge arm under the condition of large current, so that the length of the controller is increased, and the heat dissipation and the current sharing consistency are poor. And some power devices adopt a finished product packaging mode, so that the cost is high, the size is large, and the improvement of the power density is not facilitated.
In addition, GB17761-2018 "safety technical specification for electric bicycles" sets limits on the overall mass and size of the electric vehicle, so it is necessary to reduce the mass (weight) and size of each component as much as possible. How to optimize the full-bridge power module, improve the heat dissipation and the current sharing consistency, and reduce the volume and the cost has become one of the problems to be solved urgently by those skilled in the art.
SUMMERY OF THE UTILITY MODEL
In view of the above disadvantages of the prior art, an object of the present invention is to provide a three-phase full-bridge power integrated MOSFET module, which is used to solve the problems of poor heat dissipation, poor current sharing uniformity, large size, high cost, low power density, and the like in the prior art.
To achieve the above and other related objects, the present invention provides a three-phase full-bridge power integrated MOSFET module, comprising:
the plastic package body comprises power tubes, a base island and pins, wherein the power tubes and the base island are arranged in the plastic package body, the pins are arranged at the edge of the plastic package body, and each power tube is a bare chip; wherein,
the drain electrode of the first power tube is electrically connected with the first base island, the source electrode is electrically connected with the second base island through a lead, and the grid electrode is connected with the first control pin through the lead; the drain electrode of the second power tube is electrically connected with the second base island, the source electrode is connected with the first source electrode pin through a lead, and the grid electrode is connected with the second control pin through a lead; the first base island is connected with a power supply pin, and the second base island is connected with a first phase line pin;
the drain electrode of the third power tube is electrically connected with the first base island, the source electrode is electrically connected with the third base island through a lead, and the grid electrode is connected with a third control pin through a lead; the drain electrode of the fourth power tube is electrically connected with the third base island, the source electrode is connected with the second source electrode pin through a lead, and the grid electrode is connected with the fourth control pin through a lead; the third base island is connected with a second phase line pin;
the drain electrode of the fifth power tube is electrically connected with the first base island, the source electrode of the fifth power tube is electrically connected with the fourth base island through a lead, and the grid electrode of the fifth power tube is connected with a fifth control pin through a lead; the drain electrode of the sixth power tube is electrically connected with the fourth base island, the source electrode is connected with a third source electrode pin through a lead, and the grid electrode is connected with a sixth control pin through a lead; and the fourth base island is connected with a third phase line pin.
Optionally, the thermal expansion coefficients of the lead-out electrodes of the source and the gate of each power transistor and the lead are within the same preset range.
More optionally, the thermal expansion coefficients of the lead-out electrodes of the source and the grid of each power tube and the lead are the same.
More optionally, the lead wire and the extraction electrode of the source and the gate of each power transistor are made of aluminum.
Optionally, the first base island is in a U-shaped structure, the second base island and the fourth base island are respectively located on the left side and the right side of the first base island, and the third base island is located in the U-shaped opening of the first base island.
More optionally, each power transistor is located on a side of the corresponding base island near the base island to which its source is connected.
Optionally, the power tubes are of the same specification.
Optionally, the widths of the power supply pin, the first phase line pin, the second phase line pin, the third phase line pin, the first source electrode pin, the second source electrode pin and the third source electrode pin are greater than the widths of the first control pin, the second control pin, the third control pin, the fourth control pin, the fifth control pin and the sixth control pin.
More optionally, the number of the power supply pins is at least two, and each power supply pin is arranged at intervals.
Optionally, the three-phase full-bridge power integrated MOSFET module further includes a fifth base island connected to the first source pin, and the source of the second power transistor is electrically connected to the first source pin sequentially through a lead and the fifth base island.
As described above, the three-phase full-bridge power integrated MOSFET module of the present invention has the following advantages:
1. according to the three-phase full-bridge power integrated MOSFET module, the source electrode and the grid electrode of the power tube bare chip are connected to the independent base island and the base pin in a routing mode, and compared with the case that the base island is directly connected to the power tube bare chip, the stress on the base pin is prevented from being transmitted to the power tube bare chip when a finished product is transported and installed, so that the surface of the chip is prevented from forming an indentation and mechanical damage; meanwhile, the wires are connected by metal wires, and wires made of different materials can be selected so that the thermal expansion coefficient of the wires is the same as or similar to that of the surface metal of the bare chip of the power tube, and the failure rate of the device is reduced.
2. The power tube bare chip is directly packaged in the three-phase full-bridge power integrated MOSFET module, the integration level is high, the overall size of a finished product is reduced, the size of a radiating fin can also be reduced, the size of a controller is favorably controlled, the cost of a structural member is reduced, and the three-phase full-bridge power integrated MOSFET module has great advantages under the technical requirements of new national standards.
3. The mode of directly integrally packaging the power tube bare chip in the three-phase full-bridge power integrated MOSFET module is beneficial to shortening the length of a lead from each pole of the power tube bare chip to an exposed pin, reducing parasitic inductance and further improving electrical performance.
4. The three-phase full-bridge power integrated MOSFET module increases the unit heat dissipation volume for a single power tube bare chip, is favorable for controlling the integral temperature rise, and further improves the electrical performance.
5. The exposed pin in the three-phase full-bridge power integrated MOSFET module has high definition freedom, and is beneficial to PCB wiring.
Drawings
Fig. 1 is a schematic structural diagram of a three-phase full-bridge power integrated MOSFET module according to the present invention.
Fig. 2 is a schematic pin diagram of a three-phase full-bridge power integrated MOSFET module according to the present invention.
Fig. 3 is a schematic diagram showing the electrical connection of the three-phase full-bridge power integrated MOSFET module of the present invention.
Description of the element reference numerals
1 three-phase full-bridge power integrated MOSFET module
11 Plastic package body
121 first base island
122 second base island
123 third base island
124 fourth base island
125 fifth base island
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The utility model is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 3. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
As shown in fig. 1, the present embodiment provides a three-phase full-bridge power integrated MOSFET module 1, where the three-phase full-bridge power integrated MOSFET module 1 includes:
the plastic package body 11 is disposed in the plastic package body 11, and the first power tube Q1, the second power tube Q2, the third power tube Q3, the fourth power tube Q4, the fifth power tube Q5, the sixth power tube Q6, the first base island 121, the second base island 122, the third base island 123, and the fourth base island 124 are disposed in the plastic package body 11, and the power supply pin VCC, the first control pin G1, the second control pin G2, the third control pin G3, the fourth control pin G4, the fifth control pin G5, the sixth control pin G6, the first phase pin UA, the second phase pin UB, the third phase pin UC, the first source pin S1, the second source pin S2, and the third source pin S3 are disposed at the edge of the plastic package body 11. Wherein the power supply pin VCC is electrically connected to the first base island 121, the first control pin G1 is electrically connected to the second base island 122, the second control pin G2 is electrically connected to the third base island 123, and the third control pin G3 is electrically connected to the fourth base island 124; each of the pins and the base island has conductivity, and the material of each of the pins and the base island is copper, for example.
As shown in fig. 1, the first power transistor Q1 is disposed on the first base island 121, the drain of the first power transistor Q1 is electrically connected to the first base island 121, the source is electrically connected to the second base island 122 through a wire, and the gate is connected to the first control pin G1 through a wire.
As shown in fig. 1, the second power transistor Q2 is disposed on the second base island 122, the drain of the second power transistor Q2 is electrically connected to the second base island 122, the source is connected to the first source pin S1 through a wire, and the gate is connected to the second control pin G2 through a wire.
As another implementation manner of the present invention, the three-phase full-bridge power integrated MOSFET module 1 further includes a fifth base island 125 connected to the first source pin S1, and the source of the second power transistor Q2 is connected to the fifth base island 125 through a lead, and is further connected to the first source pin S1 through the fifth base island 125, so as to electrically connect the source of the second power transistor Q2 to the first source pin S1.
As shown in fig. 1, the third power transistor Q3 is disposed on the first base island 121, the drain of the third power transistor Q3 is electrically connected to the first base island 121, the source is electrically connected to the third base island 123 through a wire, and the gate is connected to the third control pin G3 through a wire.
As shown in fig. 1, the fourth power transistor Q4 is disposed on the third base island 123, the drain of the fourth power transistor Q4 is electrically connected to the third base island 123, the source is connected to the second source pin S2 through a wire, and the gate is connected to the fourth control pin G4 through a wire.
As shown in fig. 1, the fifth power transistor Q5 is disposed on the first base island 121, the drain of the fifth power transistor Q5 is electrically connected to the first base island 121, the source is electrically connected to the fourth base island 124 through a wire, and the gate is connected to the fifth control pin G5 through a wire.
As shown in fig. 1, the sixth power transistor Q6 is disposed on the fourth base island 124, the drain of the sixth power transistor Q6 is electrically connected to the fourth base island 124, the source is connected to the third source pin S3 through a wire, and the gate is connected to the sixth control pin G6 through a wire.
Specifically, each power transistor is a bare chip (Die), i.e., a single chip (unpackaged) after wafer dicing. As an implementation of the present invention, the power transistors have the same specification to improve the electrical performance uniformity of each bridge arm, and as an example, the power transistors are fabricated on the same wafer by the same process, and any power transistor that can ensure the specification to be the same or different within an acceptable range is suitable for the present invention.
Specifically, the drain of each power tube is located at the bottom. In this embodiment, the drain of each power transistor is bonded to the corresponding base island by a conductive adhesive or solder paste, and in practical use, any manner that can electrically connect the drain of the power transistor and the corresponding base island is applicable, which is not limited to this embodiment. The source and gate of each power transistor are located at the top. The source electrode of each power tube is connected with the corresponding base island or pin through a lead, for example, the lead of the source electrode of each power tube includes at least two leads, in this embodiment, the number of the leads of the source electrode of each power tube is three, so as to avoid the problems of lead disconnection and the like caused by large current; in practical use, the number of the lead wires can be set according to the current magnitude and the thickness of the lead wires, and is not limited to the embodiment. The gate of each power transistor is connected to the corresponding pin through a lead, and the number of leads of the gate of each power transistor may be set based on actual needs, which is not limited to this embodiment. In the utility model, the source electrode and the grid electrode of each power tube are bonded in a routing mode, so that the influence of pin stress on each power tube can be effectively solved, and the device failure is avoided.
Specifically, as an implementation manner of the present invention, the material of each lead may be selected based on the material of the extraction electrodes of the source and the gate of each power transistor, and the thermal expansion coefficients of the extraction electrodes of the source and the gate of each power transistor and the lead are within the same preset range, that is, the thermal expansion coefficients are the same or similar, so as to reduce the failure rate of the device. For example, the lead electrodes of the source and gate electrodes of the power transistors have the same thermal expansion coefficient as the lead wires, and the lead electrodes of the source and gate electrodes of the power transistors are made of aluminum and the lead wires are also made of aluminum.
Specifically, as an implementation manner of the present invention, each power tube is located on one side of the corresponding base island close to the base island connected to the source thereof, so as to reduce the length of the lead, reduce the parasitic inductance, and further improve the electrical performance. In this embodiment, the first base island 121 is in a U-shaped structure, the second base island 122 and the fourth base island 124 are respectively located at the left and right sides of the first base island 121, and the third base island 123 is located in the U-shaped opening of the first base island 121. At this time, the first power transistor Q1 is located in the groove of the first base island 121 near the upper left corner, so as to shorten the length of the source lead of the first power transistor Q1; the second power transistor Q2 is located in the groove of the second base island 122 near the lower left corner, so as to shorten the length of the source lead of the second power transistor Q2; the third power tube Q3 is located in the groove at the middle of the first base island 121, so as to shorten the length of the source lead of the third power tube Q3; the fourth power transistor Q4 is located in the groove at the lower right corner of the third base island 123, so as to shorten the length of the source lead of the fourth power transistor Q4; the fifth power transistor Q5 is located in the groove of the first base island 121 near the upper right corner, so as to shorten the length of the source lead of the fifth power transistor Q5; the sixth power transistor Q6 is located in the groove of the fourth base island 124 near the lower left corner to shorten the length of the source lead of the sixth power transistor Q6. In practical use, the shape of each base island and the relative position of each base island can be set as required, and the position of each power tube is set based on the shape and position of each base island, which is not described herein again.
Specifically, as shown in fig. 1 and fig. 2, in this embodiment, the plastic package body 11 is rectangular, and each pin is located on the long side of the same side of the plastic package body 11, wherein the width of the power supply pin VCC, the first phase line pin UA, the second phase line pin UB, the third phase line pin UC, the first source pin S1, the second source pin S2, and the third source pole tube pin S3 is greater than the width of the first control pin G1, the second control pin G2, the third control pin G3, the fourth control pin G4, the fifth control pin G5, and the sixth control pin G6, so that a large current flows through and heat dissipation is enhanced. The power supply pins VCC comprise at least two power supply pins VCC which are arranged at intervals, and in the embodiment, the number of the power supply pins VCC is set to be 3. First control pin G1, second control pin G2 third control pin G3 fourth control pin G4 fifth control pin G5 and sixth control pin G6 interval distribution in power supply pin VCC, first phase line pin UA, second phase line pin UB, third phase line pin UC, first source pin S1, second source pin S2 and between third source pole pipe foot S3. As an example, the arrangement sequence of the pins from left to right is as follows: the power supply circuit comprises a first source pin S1, a first phase line pin UA, a second control pin G2, a power supply pin VCC, a first control pin G1, a power supply pin VCC, a third control pin G3, a second phase line pin UB, a second source pin S2, a fourth control pin G4, a power supply pin VCC, a fifth control pin G5, a third source pin S3, a sixth control pin G6 and a third phase line pin UC. As an implementation manner of the present invention, two opposite short sides of the plastic package body 11 are further provided with positioning holes 13, and the positioning holes 13 are semicircular unfilled corners. In practical use, the number of the pins, the relative positions of the pins, the positional relationship between each pin and the plastic package body, and the positions of the positioning holes can be set according to requirements, which is not limited by the embodiment.
As shown in fig. 3, the electrical connection relationship of the three-phase full-bridge power integrated MOSFET module 1 of the present invention satisfies: the first power transistor Q1, the second power transistor Q2, the first base island 121, the second base island 122, the power supply pin VCC, the first source pin S1, the first phase pin UA, the first control pin G1, and the second control pin G2 form a half-bridge structure. The third power transistor Q3, the fourth power transistor Q4, the first base island 121, the third base island 123, the power supply pin VCC, the second source pin S2, the second phase pin UB, the third control pin G3, and the fourth control pin G4 form a half-bridge structure. The fifth power transistor Q5, the sixth power transistor Q6, the first base island 121, the fourth base island 124, the power supply pin VCC, the third source diode pin S3, the third phase line pin UC, the fifth control pin G5, and the sixth control pin G6 form a half-bridge structure. Therefore, the three-phase full-bridge structure of the utility model can be used as a rectifier and an inverter, which are not described in detail herein.
In summary, the present invention provides a three-phase full-bridge power integrated MOSFET module, including: the plastic package body comprises six power tubes, four base islands and thirteen pins, wherein the six power tubes, the four base islands and the thirteen pins are arranged on the edge of the plastic package body; the drain electrode of the first power tube is electrically connected with the first base island, the source electrode of the first power tube is electrically connected with the second base island through a lead, and the grid electrode of the first power tube is connected with the first control pin through the lead; the drain electrode of the second power tube is electrically connected with the second base island, the source electrode is connected with the first source electrode pin through a lead, and the grid electrode is connected with the second control pin through a lead; the first base island is connected with a power supply pin, and the second base island is connected with a first phase line pin; the drain electrode of the third power tube is electrically connected with the first base island, the source electrode is electrically connected with the third base island through a lead, and the grid electrode is connected with a third control pin through a lead; the drain electrode of the fourth power tube is electrically connected with the third base island, the source electrode is connected with the second source electrode pin through a lead, and the grid electrode is connected with the fourth control pin through a lead; the third base island is connected with a second phase line pin; the drain electrode of the fifth power tube is electrically connected with the first base island, the source electrode of the fifth power tube is electrically connected with the fourth base island through a lead, and the grid electrode of the fifth power tube is connected with a fifth control pin through a lead; the drain electrode of the sixth power tube is electrically connected with the fourth base island, the source electrode is connected with a third source electrode pin through a lead, and the grid electrode is connected with a sixth control pin through a lead; and the fourth base island is connected with a third phase line pin. According to the three-phase full-bridge power integrated MOSFET module, the source electrode and the grid electrode of the power tube bare chip are connected to the independent base island and the base pin in a routing mode, and compared with the case that the base island is directly connected to the power tube bare chip, stress on the base pin is prevented from being transmitted to the power tube bare chip when a finished product is transported and installed; meanwhile, the wires are connected by metal wires, and wires made of different materials can be selected so that the thermal expansion coefficient of the wires is the same as or similar to that of the surface metal of the bare chip of the power tube, and the failure rate of the device is reduced; the power tube bare chip is directly packaged, the integration level is high, the overall size of a finished product is reduced, the size of a radiating fin can be reduced, the size of a controller is favorably controlled, the cost of a structural member is reduced, and the power tube bare chip has great advantages under the technical requirements of new national standards; the direct integrated packaging mode of the power tube bare chip is beneficial to shortening the length of a lead from each pole of the power tube bare chip to an exposed pin, reducing parasitic inductance and further improving electrical performance; for a single power tube bare chip, the unit heat dissipation volume is increased, so that the whole temperature rise is favorably controlled, and the electrical performance is improved; the exposed pin has high definition freedom degree, which is beneficial to PCB wiring. Therefore, the utility model effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the utility model. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.

Claims (10)

1. A three-phase full-bridge power integrated MOSFET module, comprising at least:
the plastic package body comprises power tubes, a base island and pins, wherein the power tubes and the base island are arranged in the plastic package body, the pins are arranged at the edge of the plastic package body, and each power tube is a bare chip; wherein,
the drain electrode of the first power tube is electrically connected with the first base island, the source electrode is electrically connected with the second base island through a lead, and the grid electrode is connected with the first control pin through the lead; the drain electrode of the second power tube is electrically connected with the second base island, the source electrode is connected with the first source electrode pin through a lead, and the grid electrode is connected with the second control pin through a lead; the first base island is connected with a power supply pin, and the second base island is connected with a first phase line pin;
the drain electrode of the third power tube is electrically connected with the first base island, the source electrode is electrically connected with the third base island through a lead, and the grid electrode is connected with a third control pin through a lead; the drain electrode of the fourth power tube is electrically connected with the third base island, the source electrode is connected with the second source electrode pin through a lead, and the grid electrode is connected with the fourth control pin through a lead; the third base island is connected with a second phase line pin;
the drain electrode of the fifth power tube is electrically connected with the first base island, the source electrode of the fifth power tube is electrically connected with the fourth base island through a lead, and the grid electrode of the fifth power tube is connected with a fifth control pin through a lead; the drain electrode of the sixth power tube is electrically connected with the fourth base island, the source electrode is connected with a third source electrode pin through a lead, and the grid electrode is connected with a sixth control pin through a lead; and the fourth base island is connected with a third phase line pin.
2. The three-phase full-bridge power integrated MOSFET module of claim 1, wherein: the thermal expansion coefficients of the lead-out electrodes of the source electrode and the grid electrode of each power tube and the lead are in the same preset range.
3. The three-phase full-bridge power integrated MOSFET module of claim 2, wherein: the thermal expansion coefficients of the lead-out electrodes of the source electrode and the grid electrode of each power tube are the same as that of the lead.
4. The three-phase full-bridge power integrated MOSFET module according to any one of claims 1 to 3, wherein: the extraction electrodes of the source electrode and the grid electrode of each power tube and the lead are made of aluminum.
5. The three-phase full-bridge power integrated MOSFET module of claim 1, wherein: the first base island is of a U-shaped structure, the second base island and the fourth base island are respectively positioned on the left side and the right side of the first base island, and the third base island is positioned in the U-shaped opening of the first base island.
6. The three-phase full-bridge power integrated MOSFET module of claim 1 or 5, wherein: each power tube is positioned on one side of the corresponding base island near the base island connected with the source electrode of the power tube.
7. The three-phase full-bridge power integrated MOSFET module of claim 1, wherein: the specifications of the power tubes are the same.
8. The three-phase full-bridge power integrated MOSFET module of claim 1, wherein: the widths of the power supply pin, the first phase line pin, the second phase line pin, the third phase line pin, the first source electrode pin, the second source electrode pin and the third source electrode pin are larger than the widths of the first control pin, the second control pin, the third control pin, the fourth control pin, the fifth control pin and the sixth control pin.
9. The three-phase full-bridge power integrated MOSFET module according to claim 1 or 8, wherein: the power supply pins at least comprise two power supply pins, and the power supply pins are arranged at intervals.
10. The three-phase full-bridge power integrated MOSFET module of claim 1, wherein: the three-phase full-bridge power integrated MOSFET module further comprises a fifth base island connected with the first source electrode pin, and the source electrode of the second power tube is electrically connected with the first source electrode pin through a lead and the fifth base island in sequence.
CN202121390488.5U 2021-06-22 2021-06-22 Three-phase full-bridge power integrated MOSFET module Active CN215731698U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202121390488.5U CN215731698U (en) 2021-06-22 2021-06-22 Three-phase full-bridge power integrated MOSFET module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202121390488.5U CN215731698U (en) 2021-06-22 2021-06-22 Three-phase full-bridge power integrated MOSFET module

Publications (1)

Publication Number Publication Date
CN215731698U true CN215731698U (en) 2022-02-01

Family

ID=80044181

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202121390488.5U Active CN215731698U (en) 2021-06-22 2021-06-22 Three-phase full-bridge power integrated MOSFET module

Country Status (1)

Country Link
CN (1) CN215731698U (en)

Similar Documents

Publication Publication Date Title
CN107591377B (en) A kind of more DBC encapsulating structures and packaging method of power device
CN102754327B (en) Power conversion device
EP2099120B1 (en) Power converter
KR102664547B1 (en) Circuit layout, redistribution board, module and method of fabricating a half-bridge circuit
CN109817612B (en) Encapsulation structure for improving electrothermal performance of welded silicon carbide power module
TW201624659A (en) Semiconductor device
WO2023065602A1 (en) Power module and motor controller
CN110600450A (en) Lead frame for arranging chip, packaging body and power supply module
EP2120260A2 (en) Semiconductor unit with temperature sensor
CN112968025A (en) Intelligent power module and manufacturing method thereof
CN215731698U (en) Three-phase full-bridge power integrated MOSFET module
JP2002238260A (en) Semiconductor device
JP5062029B2 (en) Semiconductor device
CN210379038U (en) Lead frame for arranging chip, packaging body and power supply module
CN210723007U (en) Lead frame for integrated power module
CN209389026U (en) A kind of three-phase inversion IGBT module
CN114695333A (en) Intelligent power module and manufacturing method thereof, frequency converter and air conditioner
JP5024439B2 (en) Semiconductor device
TWI664701B (en) Package structure of power device
CN216849934U (en) Packaging structure of full-bridge power device
CN216849933U (en) Packaging structure of direct current single phase motor drive power device
CN221486492U (en) Power semiconductor device, vehicle-mounted charger and vehicle
CN110149057A (en) A kind of three phase full bridge circuit and intelligent power module
CN216389358U (en) Power module and motor controller
CN220604667U (en) Frameless high-power MOS packaging module and circuit structure

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant