CN215731611U - Hot plate furnace for semiconductor - Google Patents
Hot plate furnace for semiconductor Download PDFInfo
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- CN215731611U CN215731611U CN202121985082.1U CN202121985082U CN215731611U CN 215731611 U CN215731611 U CN 215731611U CN 202121985082 U CN202121985082 U CN 202121985082U CN 215731611 U CN215731611 U CN 215731611U
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Abstract
The utility model discloses a hot plate furnace for semiconductors, which comprises a shell and a heating mechanism, wherein the heating mechanism specifically comprises a heat insulation frame, a heat insulation plate, a heating plate, a spring telescopic rod, a joint, a connecting block, a heater and a heating plate, the heat insulation frame is arranged on the inner wall of the shell, the heat insulation plate is connected on the inner wall of the heat insulation frame in a sliding way in a matching way, the spring telescopic rod is welded on one side of the surface of the heat insulation plate, the heating plate is arranged on one side of the surface of the heating plate, the joint is arranged on one side of the surface of the heating plate, the connecting block is arranged on the inner wall of the heat insulation frame, the surface of the shell is connected with a heat insulation cover in a matching way in a rotating way, the heating plate is arranged on the surface of the heat insulation cover, the heater is arranged on the inner wall of the shell, the heating efficiency of the whole device is higher, a plurality of semiconductor plates can be synchronously heated, the device has good smoking capability, and can effectively prevent smoke from polluting the inside of the device, and the heating temperature is not lowered too much.
Description
Technical Field
The utility model relates to the technical field of hot plate furnaces, in particular to a hot plate furnace for a semiconductor.
Background
The hot plate furnace is mainly used for pretreatment baking before gluing materials such as silicon wafers, gallium arsenide, lithium niobate, glass and the like, hardening baking after gluing and high-temperature baking after developing in the semiconductor manufacturing process, and the mode is contact baking of the wafers.
The existing hot plate furnace has no good treatment device for the smoke generated by heating in the heating process, so that the inside of the device is easily polluted, and the device has no good energy-saving structure, so that a large amount of energy can be consumed during heating. To this end, we propose a hot plate furnace for semiconductors.
SUMMERY OF THE UTILITY MODEL
The utility model mainly aims to provide a hot plate furnace for a semiconductor, which can effectively solve the problems in the background technology.
In order to achieve the purpose, the utility model adopts the technical scheme that:
the utility model provides a hot plate furnace for semiconductor, includes the shell, still includes heating mechanism, heating mechanism specifically comprises heat preservation frame, heat insulating board, heating plate, spring telescopic link, joint, connecting block, heater and hot plate, the heat preservation frame is installed to the shell inner wall, heat preservation frame inner wall cooperation sliding connection has the heat insulating board, the welding of heat insulating board surface one side has the spring telescopic link, the heating plate is installed to heat insulating board surface one side, heating plate surface one side is installed and is connected, the connecting block is installed to heat preservation frame inner wall, shell surface cooperation rotates and is connected with the lid that keeps warm, it has the hot plate to keep warm lid surface mounting, the heater is installed to the shell inner wall.
The air exhaust mechanism is composed of an air passage, an air inlet, a sealing block, a channel, a dispersion hole and an air pump; through exhaust mechanism, let the whole flue gas that produces when can better absorption heating to can not reduce thermal giving off.
Furthermore, an air passage is arranged on the inner wall of the heat preservation frame, an air inlet is arranged on one side of the surface of the air passage, the surface of the air passage is fixedly connected with a channel, dispersion holes are arranged on the surface of the channel, an air pump is arranged on the surface of the channel, and a sealing block is fixedly connected to the surface of the heat insulation plate; when the heat preservation frame does not heat the semiconductor, sealed piece can be stopped up the air inlet, just so can not produce suction to this heat preservation frame, when the semiconductor produces the extrusion to the heating plate, can drive its downstream, thereby let the sealed piece and the air inlet alternate segregation on its surface, and then form the route, the air pump is direct not to the passageway production negative pressure, but blow gas through the level, let its meet produce the negative pressure to the passageway, at this moment can disperse suction under the effect in dispersion hole, the air inlet just can not produce great wind-force like this, thereby reduce the temperature in the heat preservation frame, whole device has fine smoking ability, can effectually prevent that the flue gas from leading to the fact the pollution to the device is inside, and can not reduce heating temperature.
Further, a PLC controller is installed on the surface of the shell; the whole device is controlled by a PLC controller.
Compared with the prior art, the utility model has the following beneficial effects: because the heating plate and the corresponding heating plate are connected in series, the semiconductor wafer is only required to be placed in the heat preservation frame to be contacted with the heating plate when being heated, the heat preservation cover is covered, the heating plate on the surface of the heat preservation cover can be contacted with the semiconductor and generate extrusion to force the heating plate to move downwards, so that the joint and the connecting block on the surface of the heating plate are contacted with each other to form a passage, the heating time and the heating temperature of the heater are set through the PLC controller, so that the two sides of the semiconductor wafer can be synchronously heated, the heating efficiency is higher, the heat preservation frame without the semiconductor wafer is driven to be separated from the connecting block under the action of the spring telescopic rod, so that the heating plate and the heating plate on the surface of the heating plate cannot be started, the energy consumption is reduced, when the semiconductor is not heated by the heat preservation frame, the air inlet is blocked by the sealing block, so that the suction force cannot be generated on the heat preservation frame, when the semiconductor produces the extrusion to the heating plate, can drive its downstream, thereby let the sealed piece and the air inlet alternate segregation on its surface, and then form the route, the air pump is not direct to the passageway production negative pressure, but through the level blow gas, let its connecing produce the negative pressure to the passageway, at this moment can disperse suction under the effect in dispersion hole, the air inlet just can not produce great wind-force like this, thereby reduce the temperature in the heat preservation frame, whole device heating efficiency is higher, can heat a plurality of semiconductor chips in step, and there is fine smoking ability, can effectually prevent that the flue gas from causing the pollution to the device inside, and can not too much reduce the heating temperature.
Drawings
FIG. 1 is a schematic view of the overall structure of a hot plate furnace for semiconductor according to the present invention.
FIG. 2 is a schematic view of the inner wall structure of a heat-insulating frame of a hot plate furnace for semiconductors according to the present invention.
FIG. 3 is a schematic view of the inner wall structure of the outer shell of the hot plate furnace for semiconductor according to the present invention.
In the figure: 1. a housing; 2. a heating mechanism; 201. a heat preservation frame; 202. a heat insulation plate; 203. a heating plate; 204. a spring telescopic rod; 205. a joint; 206. connecting blocks; 207. a heater; 208. heating plates; 3. an exhaust mechanism; 301. an airway; 302. an air inlet; 303. a sealing block; 304. a channel; 305. a dispersion hole; 306. an air pump; 4. a PLC controller; 5. and (7) a heat preservation cover.
Detailed Description
In order to make the technical means, the creation characteristics, the achievement purposes and the effects of the utility model easy to understand, the utility model is further described with the specific embodiments.
As shown in fig. 1-3, a hot plate furnace for semiconductor, including shell 1, still include heating mechanism 2, heating mechanism 2 specifically comprises heat preservation frame 201, heat insulating board 202, heating plate 203, spring telescopic link 204, joint 205, connecting block 206, heater 207 and heating plate 208, heat preservation frame 201 is installed to shell 1 inner wall, heat preservation frame 201 inner wall cooperation sliding connection has heat insulating board 202, the welding of heat insulating board 202 surface one side has spring telescopic link 204, heating plate 203 is installed to heat insulating board 202 surface one side, joint 205 is installed to heating plate 203 surface one side, connecting block 206 is installed to heat preservation frame 201 inner wall, shell 1 surface cooperation rotation is connected with heat preservation lid 5, heat preservation lid 5 surface mounting has heating plate 208, heater 207 is installed to shell 1 inner wall.
The air exhaust device comprises an air exhaust mechanism 3, wherein the air exhaust mechanism 3 specifically comprises an air channel 301, an air inlet 302, a sealing block 303, a channel 304, dispersion holes 305 and an air pump 306; through exhaust mechanism 3, let the whole flue gas that produces when can better absorption heating to can not reduce the giving off of heat.
An air passage 301 is installed on the inner wall of the heat-insulating frame 201, an air inlet 302 is installed on one side of the surface of the air passage 301, a channel 304 is fixedly connected to the surface of the air passage 301, dispersion holes 305 are installed on the surface of the channel 304, an air pump 306 is installed on the surface of the channel 304, and a sealing block 303 is fixedly connected to the surface of the heat-insulating plate 202; when the heat preservation frame 201 does not heat the semiconductor, the sealing block 303 can block up the air inlet 302, so that suction can not be generated on the heat preservation frame 201, when the semiconductor extrudes the heating sheet 203, the semiconductor can be driven to move downwards, so that the sealing block 303 on the surface of the semiconductor is separated from the air inlet 302, a passage is formed, the air pump 306 does not directly generate negative pressure on the passage, but horizontally blows air, the suction is indirectly generated on the passage 304, at the moment, the suction can be dispersed under the action of the dispersion holes 305, so that the air inlet 302 can not generate large wind power, the temperature in the heat preservation frame 201 is reduced, the whole device has good smoking capacity, the smoke can be effectively prevented from polluting the inside of the device, and the heating temperature can not be reduced.
Wherein, the surface of the shell 1 is provided with a PLC controller 4; the entire apparatus is controlled by the PLC controller 4.
It should be noted that, in the present invention, because the heating plate 208 and the corresponding heating plate 203 are connected in series, when in operation, a semiconductor wafer is only required to be placed in the heat-insulating frame 201 to be contacted with the heating plate 203, the heat-insulating cover 5 is covered, and then the heating plate 208 on the surface of the heat-insulating cover 5 is contacted with the semiconductor and generates extrusion, so as to force the heating plate 203 to move downward, so that the joint 205 and the connecting block 206 on the surface are contacted with each other to form a channel, the PLC controller 4 sets the heating time and the heating temperature of the heater 207, so as to heat both sides of the semiconductor wafer synchronously, the heating efficiency is high, and the heat-insulating frame 201 without semiconductor wafer can drive the joint 205 and the connecting block 206 to be separated from each other under the action of the spring telescopic rod 204, so as to not start the heating plate 203 and the heating plate 208 on the surface, thus, the energy consumption is reduced, and when the heat-insulating frame 201 does not heat the semiconductor, the sealing block 303 will block the air inlet 302, so that it will not generate suction to the thermal insulation frame 201, when the semiconductor presses the heating plate 203, it will move downward, so that the sealing block 303 on its surface is separated from the air inlet 302, thereby forming a passage, the air pump 306 does not directly generate negative pressure to the channel, but blows air horizontally to generate negative pressure to the channel 304, the suction force is dispersed by the dispersion holes 305, so that the air inlet 302 does not generate a large wind force, thereby reducing the temperature in the heat-insulating frame 201, the whole device has higher heating efficiency, can synchronously heat a plurality of semiconductor wafers, and has good smoking ability, can effectively prevent the smoke from polluting the inside of the device, and can not reduce the heating temperature too much.
The foregoing shows and describes the general principles and broad features of the present invention and advantages thereof. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the utility model as claimed. The scope of the utility model is defined by the appended claims and equivalents thereof.
Claims (4)
1. The utility model provides a hot plate furnace for semiconductor, includes shell (1), its characterized in that still includes heating mechanism (2), heating mechanism (2) specifically comprises heat preservation frame (201), heat insulating board (202), heating plate (203), spring telescopic link (204), joint (205), connecting block (206), heater (207) and hot plate (208), heat preservation frame (201) is installed to shell (1) inner wall, heat preservation frame (201) inner wall cooperation sliding connection has heat insulating board (202), heat insulating board (202) surface one side welding has spring telescopic link (204), heating plate (203) surface one side is installed to heat insulating board (202), joint (205) are installed to heating plate (203) surface one side, connecting block (206) are installed to heat preservation frame (201) inner wall, shell (1) surface cooperation rotating connection has heat preservation lid (5), the surface of the heat preservation cover (5) is provided with a heating plate (208), and the inner wall of the shell (1) is provided with a heater (207).
2. The hot plate furnace for semiconductor as claimed in claim 1, wherein: the air-purifying device further comprises an air exhaust mechanism (3), wherein the air exhaust mechanism (3) is specifically composed of an air channel (301), an air inlet (302), a sealing block (303), a channel (304), a dispersion hole (305) and an air pump (306).
3. The hot plate furnace for semiconductor as claimed in claim 2, wherein: air flue (301) are installed to heat preservation frame (201) inner wall, air inlet (302) are installed to air flue (301) surface one side, air flue (301) fixed surface is connected with passageway (304), passageway (304) surface mounting has dispersion hole (305), passageway (304) surface mounting has air pump (306), heat insulating board (202) fixed surface is connected with sealed piece (303).
4. The hot plate furnace for semiconductor as claimed in claim 1, wherein: and a PLC (programmable logic controller) (4) is arranged on the surface of the shell (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121985082.1U CN215731611U (en) | 2021-08-23 | 2021-08-23 | Hot plate furnace for semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121985082.1U CN215731611U (en) | 2021-08-23 | 2021-08-23 | Hot plate furnace for semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN215731611U true CN215731611U (en) | 2022-02-01 |
Family
ID=79999935
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202121985082.1U Active CN215731611U (en) | 2021-08-23 | 2021-08-23 | Hot plate furnace for semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN215731611U (en) |
-
2021
- 2021-08-23 CN CN202121985082.1U patent/CN215731611U/en active Active
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