CN215680657U - High-power transistor of high-voltage high-frequency quick switch - Google Patents

High-power transistor of high-voltage high-frequency quick switch Download PDF

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Publication number
CN215680657U
CN215680657U CN202121711823.7U CN202121711823U CN215680657U CN 215680657 U CN215680657 U CN 215680657U CN 202121711823 U CN202121711823 U CN 202121711823U CN 215680657 U CN215680657 U CN 215680657U
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Prior art keywords
pole rod
transistor
shell
power transistor
heat dissipation
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CN202121711823.7U
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Chinese (zh)
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梁科宁
王诚杰
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Guangzhou Ousong Electronic Technology Co ltd
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Guangzhou Ousong Electronic Technology Co ltd
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Abstract

The utility model discloses a high-power transistor of a high-voltage high-frequency quick switch, which relates to the technical field of high-power transistors and comprises a shell and a transistor body arranged in the shell, wherein the shell comprises a cover body and a base, the transistor body is fixed between the cover body and the base, a protection assembly is arranged on the transistor body, the transistor body comprises a heat dissipation fixing plate and a pole rod, and the protection assembly comprises a support column, a rubber sleeve and a rubber block. The utility model relates to a high-power transistor of a high-voltage high-frequency quick switch, which can avoid the pole rod from being broken when being bent by external force through a rubber sleeve, can provide reverse elasticity through a rubber block, simultaneously increases the sealing stability of the rubber sleeve, improves the protection of the pole rod in a transistor body on the premise of not influencing the packaging, prolongs the service life of the transistor body, and can recycle a protective sleeve and an anti-collision sleeve, thereby avoiding waste and saving cost.

Description

High-power transistor of high-voltage high-frequency quick switch
Technical Field
The utility model relates to the technical field of high-power transistors, in particular to a high-power transistor of a high-voltage high-frequency quick switch.
Background
In order to support the transmission conversion and the optimal control of electric energy, the technical trend of the transistor is to develop towards high voltage and large current, and the technical trend of the transistor is to have higher frequency and speed in the electronic field, and the high-power transistor of the high-voltage high-frequency fast switch has high technical content.
High-power transistor of high voltage high frequency fast switch is more and more popular at present as a neotype power device, but its when using, and the pole of transistor takes place to break and decreases the phenomenon easily, and in the transportation, can't protect to the pole.
SUMMERY OF THE UTILITY MODEL
The utility model mainly aims to provide a high-power transistor of a high-voltage high-frequency quick switch, which can effectively solve the problems that a pole rod is easy to break and the pole rod cannot be protected in transportation in the background technology.
In order to achieve the purpose, the utility model adopts the technical scheme that: a high-power transistor of a high-voltage high-frequency quick switch comprises a shell and a transistor body arranged in the shell, wherein the shell comprises a cover body and a base, the transistor body is fixed between the cover body and the base, a protection component is arranged on the transistor body, the transistor body comprises a heat dissipation fixing plate and a pole rod, one end of the heat dissipation fixing plate is connected with one end of the pole rod, the other end of the heat dissipation fixing plate extends to the outside of one side of the shell, the other end of the pole rod extends to the outside of the other side of the shell, the protection component comprises a support column, a rubber sleeve and a rubber block, a first groove is formed in one side, close to the pole rod, of the heat dissipation fixing plate, the support column is fixedly arranged on the inner wall of the first groove, the rubber sleeve is prevented from falling off the pole rod through the support column, the rubber sleeve is sleeved at one end of the ring side of the pole rod and is positioned in the first groove, rubber sleeve one side and support column fixed connection can avoid the pole piece to receive the circumstances that takes place the rupture when external force is buckled through rubber sleeve, the block rubber sets up in first recess outsidely, rubber sleeve opposite side and block rubber fixed connection can provide reverse elasticity through the block rubber, increase the sealed stability ability of rubber sleeve simultaneously, under the prerequisite that does not influence the encapsulation, promoted the protection to pole piece in the transistor body, prolonged the life of transistor body.
Preferably, the embedded groove has been seted up to four corners at lid top, the mounting hole has all been seted up with four corners at base top to diapire in the embedded groove, is convenient for the installation of lid and base through the mounting hole.
Preferably, the outside of the other end of the heat dissipation fixing plate is provided with a clamping groove, and the middle of the other end of the heat dissipation fixing plate is provided with a through hole groove.
Preferably, the pole rod outside is provided with the protective sheath, the protective sheath is close to casing one side fixedly connected with inserted block, the inserted block is with the horizontal axis of pole rod personally submitting symmetric distribution, is convenient for the block of protective sheath and casing through the inserted block to be connected.
Preferably, the second recess has been seted up to the protective sheath inside wall, second recess internally mounted has the anticollision cover, the anticollision cover is horizontal equidistance and distributes.
Preferably, the pole piece is horizontal equidistance and distributes, the pole piece's the other end and the laminating of anticollision cover inside can avoid the pole piece to damage in the transportation through protective sheath and anticollision cover, and protective sheath and anticollision cover can recycle, can not cause the waste, have saved the cost.
Preferably, a slot is formed in one side of the shell corresponding to the insertion block, and the insertion block is connected with the slot in a clamping manner.
Compared with the prior art, the utility model has the following beneficial effects:
1. according to the transistor body, the rubber sleeve is prevented from falling off from the pole rod through the supporting columns, the pole rod can be prevented from being broken when being bent by external force through the rubber sleeve, reverse elasticity can be provided through the rubber blocks, meanwhile, the sealing stability of the rubber sleeve is improved, the protection of the pole rod in the transistor body is improved on the premise that packaging is not affected, and the service life of the transistor body is prolonged.
2. According to the pole rod anti-collision device, the insertion block is convenient for clamping and connecting the protective sleeve and the shell, the mounting of the cover body and the base is convenient through the mounting hole, the pole rod can be prevented from being damaged in the transportation process through the protective sleeve and the anti-collision sleeve, the protective sleeve and the anti-collision sleeve can be recycled, waste is avoided, and the cost is saved.
Drawings
FIG. 1 is a schematic perspective view of a high power transistor structure of a high voltage high frequency fast switch according to the present invention;
FIG. 2 is a schematic diagram of the internal connection structure of a high-power transistor structure of a high-voltage high-frequency fast switch according to the present invention;
FIG. 3 is an enlarged schematic view of part A of the structure of a high power transistor of a high voltage high frequency fast switch according to the present invention;
fig. 4 is a schematic view of a three-dimensional connection structure of a high-power transistor structure casing, a cover, a base, a heat dissipation fixing plate, a pole and a mounting hole of the high-voltage high-frequency fast switch of the utility model.
In the figure: 1. a housing; 2. a transistor body; 3. a cover body; 4. a base; 5. a heat dissipation fixing plate; 6. a pole rod; 7. a support pillar; 8. a rubber sleeve; 9. a rubber block; 10. mounting holes; 11. a protective sleeve; 12. inserting a block; 13. an anti-collision sleeve.
Detailed Description
In order to make the technical means, the creation characteristics, the achievement purposes and the effects of the utility model easy to understand, the utility model is further described with the specific embodiments.
In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "front", "rear", "both ends", "one end", "the other end", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "disposed," "connected," and the like are to be construed broadly, such as "connected," which may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Referring to fig. 1-4, the utility model is a high-power transistor of a high-voltage high-frequency fast switch, comprising a casing 1 and a transistor body 2 arranged inside the casing 1, wherein the casing 1 comprises a cover 3 and a base 4, the transistor body 2 is fixed between the cover 3 and the base 4, a protection component is arranged on the transistor body 2, the transistor body 2 comprises a heat dissipation fixing plate 5 and a pole rod 6, one end of the heat dissipation fixing plate 5 is connected with one end of the pole rod 6, the other end of the heat dissipation fixing plate 5 extends to the outside of one side of the casing 1, the other end of the pole rod 6 extends to the outside of the other side of the casing 1, the protection component comprises a support pillar 7, a rubber sleeve 8 and a rubber block 9, one side of the heat dissipation fixing plate 5, which is close to the pole rod 6, is provided with a first groove, the support pillar 7 is fixedly arranged on the inner wall of the first groove, the support pillar 7 prevents the rubber sleeve 8 from falling off from the pole rod 6, 8 covers of rubber sleeve pipe establish the one end of 6 ring sides of utmost point pole and be located inside first recess, 8 one side of rubber sleeve pipe and 7 fixed connection of support column, can avoid the condition that takes place the rupture when the utmost point pole 6 receives external force to buckle through rubber sleeve pipe 8, rubber block 9 sets up at first recess outsidely, 8 opposite sides of rubber sleeve pipe and 9 fixed connection of rubber block, can provide reverse elasticity through rubber block 9, increase the 8 sealed stability performance of rubber sleeve pipe simultaneously, under the prerequisite that does not influence the encapsulation, the protection to utmost point pole 6 in transistor body 2 has been promoted, transistor body 2's life has been prolonged.
The embedded groove has been seted up to four corners at 3 tops of lid, and mounting hole 10 has all been seted up to diapire in the embedded groove and four corners at 4 tops of base, the installation of lid 3 and base 4 of being convenient for through mounting hole 10.
The outside of the other end of the heat dissipation fixing plate 5 is provided with a clamping groove, and the middle of the other end of the heat dissipation fixing plate 5 is provided with a through hole groove.
The outside of pole rod 6 is provided with protective sheath 11, and protective sheath 11 is close to 1 one side fixedly connected with inserted block 12 of casing, and inserted block 12 is personally submitted the symmetric distribution with the horizontal axis of pole rod 6, and the block of being convenient for protective sheath 11 and casing 1 through inserted block 12 is connected.
The second recess has been seted up to 11 inside walls of protective sheath, and second recess internally mounted has anticollision cover 13, and anticollision cover 13 is horizontal equidistance and distributes.
Pole 6 is horizontal equidistance and distributes, and the other end of pole 6 and the inside laminating of anticollision cover 13 can avoid pole 6 to damage in the transportation through protective sheath 11 and anticollision cover 13, and protective sheath 11 and anticollision cover 13 can recycle, can not cause the waste, have saved the cost.
One side of the shell 1 corresponding to the insertion block 12 is provided with a slot, and the insertion block 12 is connected with the slot in a clamping manner.
The working principle of the utility model is as follows: when using, prevent through support column 7 that rubber sleeve 8 from droing from utmost point pole 6, can avoid the condition that takes place the rupture when utmost point pole 6 receives external force to buckle through rubber sleeve 8, can provide reverse elasticity through rubber piece 9, increase the sealed stability ability of rubber sleeve 8 simultaneously, under the prerequisite that does not influence the encapsulation, the protection to utmost point pole 6 in transistor body 2 has been promoted, transistor body 2's life has been prolonged, be convenient for protective sheath 11 through inserted block 12 and be connected with the block of casing 1, be convenient for lid 3 and base 4's installation through mounting hole 10, can avoid utmost point pole 6 to damage in the transportation through protective sheath 11 and anticollision cover 13, and protective sheath 11 and anticollision cover 13 can recycle, can not cause the waste, and save the cost.
The foregoing shows and describes the general principles and broad features of the present invention and advantages thereof. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the utility model as claimed. The scope of the utility model is defined by the appended claims and equivalents thereof.

Claims (7)

1. A high-power transistor of high-voltage high-frequency fast switch is characterized in that: the transistor structure comprises a shell (1) and a transistor body (2) arranged inside the shell (1), wherein the shell (1) comprises a cover body (3) and a base (4), the transistor body (2) is fixed between the cover body (3) and the base (4), and a protection assembly is arranged on the transistor body (2);
the transistor body (2) comprises a heat dissipation fixing plate (5) and a pole rod (6), one end of the heat dissipation fixing plate (5) is connected with one end of the pole rod (6), the other end of the heat dissipation fixing plate (5) extends to the outside of one side of the shell (1), and the other end of the pole rod (6) extends to the outside of the other side of the shell (1);
the protection component comprises a support column (7), a rubber sleeve (8) and a rubber block (9), a first groove is formed in one side, close to the pole rod (6), of the heat dissipation fixing plate (5), the support column (7) is fixedly installed on the inner wall of the first groove, the rubber sleeve (8) is sleeved at one end of the ring side of the pole rod (6) and is located inside the first groove, one side of the rubber sleeve (8) is fixedly connected with the support column (7), the rubber block (9) is arranged outside the first groove, and the other side of the rubber sleeve (8) is fixedly connected with the rubber block (9).
2. A high-power transistor of high-voltage high-frequency fast switching according to claim 1, characterized in that: the embedded groove has been seted up to four corners at lid (3) top, mounting hole (10) have all been seted up with four corners at base (4) top to diapire in the embedded groove.
3. A high-power transistor of high-voltage high-frequency fast switching according to claim 1, characterized in that: the outside of the other end of the heat dissipation fixing plate (5) is provided with a clamping groove, and the middle of the other end of the heat dissipation fixing plate (5) is provided with a through hole groove.
4. A high-power transistor of high-voltage high-frequency fast switching according to claim 1, characterized in that: the pole rod comprises a pole rod body (6), and is characterized in that a protective sleeve (11) is arranged outside the pole rod body (6), an insertion block (12) is fixedly connected to one side, close to the shell body (1), of the protective sleeve (11), and the insertion block (12) is symmetrically distributed in the horizontal middle axis of the pole rod body (6).
5. The high-power transistor of high-voltage high-frequency fast switching according to claim 4, characterized in that: the second recess has been seted up to protective sheath (11) inside wall, second recess internally mounted has anticollision cover (13), anticollision cover (13) are horizontal equidistance and distribute.
6. The high-power transistor of high-voltage high-frequency fast switching according to claim 5, characterized in that: pole rod (6) are horizontal equidistance and distribute, the other end and the inside laminating of anticollision cover (13) of pole rod (6).
7. A high-power transistor of high-voltage high-frequency fast switching according to claim 1, characterized in that: a slot is formed in one side, corresponding to the insertion block (12), of the shell (1), and the insertion block (12) is connected with the slot in a clamping mode.
CN202121711823.7U 2021-07-27 2021-07-27 High-power transistor of high-voltage high-frequency quick switch Active CN215680657U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202121711823.7U CN215680657U (en) 2021-07-27 2021-07-27 High-power transistor of high-voltage high-frequency quick switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202121711823.7U CN215680657U (en) 2021-07-27 2021-07-27 High-power transistor of high-voltage high-frequency quick switch

Publications (1)

Publication Number Publication Date
CN215680657U true CN215680657U (en) 2022-01-28

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CN202121711823.7U Active CN215680657U (en) 2021-07-27 2021-07-27 High-power transistor of high-voltage high-frequency quick switch

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114582756A (en) * 2022-02-25 2022-06-03 江苏韦达半导体有限公司 Silicon controlled rectifier device based on FOPLP advanced encapsulation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114582756A (en) * 2022-02-25 2022-06-03 江苏韦达半导体有限公司 Silicon controlled rectifier device based on FOPLP advanced encapsulation

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