CN215676611U - Self-adaptive adjusting film based on phase-change material and energy-saving window - Google Patents
Self-adaptive adjusting film based on phase-change material and energy-saving window Download PDFInfo
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- CN215676611U CN215676611U CN202121598360.8U CN202121598360U CN215676611U CN 215676611 U CN215676611 U CN 215676611U CN 202121598360 U CN202121598360 U CN 202121598360U CN 215676611 U CN215676611 U CN 215676611U
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Abstract
The application provides a self-adaptive adjusting film based on a phase-change material and an energy-saving window. The adaptive modulation film comprises: the infrared reflection layer is arranged on one side of the substrate layer, the phase change layer is arranged on the side, far away from the infrared reflection layer, of the substrate layer, and an antireflection film is arranged on the phase change layer; the substrate layer is made of transparent materials, the phase change layer is made of thermally induced phase change materials, the phase change layer, the substrate layer and the intermediate infrared reflecting layer form an F-P resonant cavity together, and the F-P resonant cavity is used for transmitting solar band light with a wave band of 0.3-2.5 microns and reflecting intermediate infrared light with a wave band of 8-14 microns. The energy-saving window carrying the self-adaptive adjusting film can freely switch working modes according to the ambient temperature and has good transmittance. The self-adaptive adjusting film has application prospects in the fields of building energy conservation, spacecrafts, infrared camouflage and the like.
Description
Technical Field
The application belongs to the technical field of optics, and relates to a self-adaptive adjusting film based on a phase-change material and an energy-saving window.
Background
In recent years, with the development of industrialization, people have been under the pressure of energy consumption and environmental pollution while enjoying the convenience of industrial progress. As early as the 20 th century, policies for sustainable energy have been developed, which lead to energy saving and emission reduction on the one hand, and vigorously advocate green energy development on the other hand. One of the measures for energy conservation and emission reduction is provided by using radiation cooling, wherein the radiation cooling uses a deep space cold source with the temperature of only 3K, and a solar heat source with the temperature of about 6000K used by solar energy. However, the traditional method for cooling by radiation or heating by solar energy is a single cooling or heating process, and cannot achieve the dual functions of cooling in high-temperature weather and heating in low-temperature weather, so that the method is inflexible to use, and brings limitation to the wide use of the method.
An energy saving window based on phase change materials is thus proposed.
SUMMERY OF THE UTILITY MODEL
In order to overcome the above-mentioned defect point, the present application aims at:
the self-adaptive adjusting film based on the phase change material aims to simultaneously utilize solar heat energy and deep space cold energy, and can realize temperature reduction when the temperature is higher and temperature rise when the temperature is lower.
In order to achieve the purpose, the following technical scheme is adopted in the application:
an adaptive tuning film based on a phase change material, comprising: the transparent substrate layer is characterized in that one side of the substrate layer is provided with a middle infrared reflection layer, the side of the substrate layer far away from the middle infrared reflection layer is provided with a phase change layer, and an antireflection film is arranged on the phase change layer;
the phase change layer comprises a thermally induced phase change material,
the phase change layer, the substrate layer and the intermediate infrared reflection layer together form an F-P resonant cavity,
the F-P resonant cavity is used for transmitting solar wave band light of 0.3-2.5 mu m and reflecting mid-infrared light of 8-14 mu m wave band. The self-adaptive adjusting film based on the phase-change material can freely switch working modes according to the ambient temperature and simultaneously utilize the transparent substrate layer, so that the self-adaptive adjusting film has good transmittance.
An adaptive tuning film based on a phase change material, comprising: a substrate layer, characterized in that,
a middle infrared reflection layer is arranged on one side of the substrate layer, a phase change layer is arranged on the side, far away from the middle infrared reflection layer, of the substrate layer, and an antireflection film is arranged on the phase change layer;
the substrate layer comprises a transparent material, the phase change layer comprises a thermotropic phase change material,
the phase change layer, the substrate layer and the middle infrared reflection layer form an F-P resonant cavity together, and the F-P resonant cavity is used for transmitting solar band light of 0.3-2.5 microns and reflecting middle infrared light of 8-14 microns.
Preferably, the phase change layer is a vanadium dioxide coating, and the phase change temperature of the phase change layer is reduced to a preset temperature by using a doping process in advance.
Preferably, the substrate layer is BaF2、ZnSe、CaF2、MgF2、HfO2One or the combination of ZnS and ZnSe.
Preferably, the infrared reflecting layer is a metal reflecting film layer made of ITO or SiO2A film containing Ag, Au or Al is plated on the surface of the substrate.
Preferably, the intermediate infrared reflecting layer is made of metal silver, and the thickness of the intermediate infrared reflecting layer is 5 nm-20 nm.
Preferably, the thickness of the antireflection film is 80nm to 120nm, and the thickness of the phase change layer is 10nm to 30 nm.
Preferably, the thickness of the F-P resonant cavity is 500 nm-1200 nm.
Preferably, the antireflection film comprises MgF2 material, and the thickness of the antireflection film is 80nm to 120 nm.
Preferably, the antireflection film is made of HfO2The thickness of the film is between 80nm and 120 nm.
The embodiment of the application provides an energy-saving window, which is characterized in that the self-adaptive adjusting film based on the phase-change material is configured, and the self-adaptive adjusting film based on the phase-change material is attached to the energy-saving window.
Advantageous effects
Compared with the prior art, the self-adaptive adjusting film based on the phase-change material in the embodiment of the application can freely switch the working mode according to the ambient temperature and has good transmittance. The self-adaptive adjusting film can be used in the fields of building energy conservation, spacecrafts, infrared camouflage and the like.
Drawings
FIG. 1 is a schematic diagram of an adaptive tuning film structure based on phase change materials according to an embodiment of the present application;
wherein: 1. substrate layer, 2, middle infrared reflection layer, 3, phase change layer, 4, antireflection coating.
FIG. 2 is a schematic diagram of an adaptive window of an embodiment of the present application at a temperature of 100 ℃.
FIG. 3 is a schematic diagram of an adaptive window at 0 ℃ according to an embodiment of the present application.
Detailed Description
The above-described scheme is further illustrated below with reference to specific examples. It should be understood that these examples are for illustrative purposes and are not intended to limit the scope of the present application. The conditions employed in the examples may be further adjusted as determined by the particular manufacturer, and the conditions not specified are typically those used in routine experimentation.
The application provides a self-adaptation regulating film based on phase change material, this self-adaptation regulating film includes: the phase change film comprises a substrate layer, wherein a middle infrared reflection layer is arranged on one side (also called bottom) of the substrate layer, a phase change layer is arranged on the side (also called top) of the substrate layer opposite to the middle infrared reflection layer, and an anti-reflection film is arranged on the outer side of the phase change layer. In the embodiment, the substrate layer is made of a transparent material, the phase change layer is made of a thermotropic phase change material, the phase change layer, the substrate layer and the intermediate infrared reflecting layer form an F-P resonant cavity together, and the F-P resonant cavity is used for transmitting solar band light of 0.3-2.5 microns and reflecting intermediate infrared light of 8-14 microns. The self-adaptive adjusting film is used for an energy-saving window, so that the working mode can be freely switched according to the ambient temperature and the self-adaptive adjusting film has good transmittance. The self-adaptive adjusting film can also be used in the fields of building energy conservation, spacecrafts, infrared camouflage and the like.
As shown in figure 1, the structure of the adaptive tuning film based on the phase change material is schematically shown,
the adaptive modulation film comprises:
the structure comprises a substrate layer 1, wherein a middle infrared reflection layer 2 is arranged at the bottom of the substrate layer, a phase change layer 3 is arranged at the top of the substrate layer, and an antireflection film 4 is arranged on the outer side of the phase change layer;
the substrate layer is made of transparent material, the phase change layer is made of thermotropic phase change material,
the phase change layer 3, the substrate layer 1 and the middle infrared reflecting layer 2 together form an F-P resonant cavity which is used for transmitting solar wave band light of 0.3-2.5 mu m and reflecting middle infrared light of 8-14 mu m wave band. The self-adaptive adjusting film can freely switch working modes according to the ambient temperature and has good transmittance.
Radiation refrigeration principle:
in order to quantitatively illustrate the basic principle of the phase change material-based adaptive control film, a net cooling power calculation formula for the temperature control of the phase change material-based adaptive control film is listed:
Pnet＝Prad(TSATM,ε)-Psun-Patm(Tamb,ε)-Pcc(TSATM,Tamb) (1)
Pradfor thermal radiation power of the object, TSATMIn order to adapt the temperature of the temperature regulator, epsilon is the emissivity spectrum of the object. PsunTo absorb power in the solar band, PatmFor radiation power of atmosphere to object, TambIs ambient temperature. PccThe power dissipated for heat conduction and convection, the environment conducting heat conduction and heat convection to the object due to the exposure of the object to the environmentWill have an effect on the temperature of the device. To achieve radiation cooling, guarantee PatmAnd PccIn smaller cases, it is most important to increase PradAnd reducing the solar heating power PsunThis is achieved primarily by selecting suitable materials and structures. The following two points are required for realizing radiation refrigeration:
(1) the solar energy collector has high (close to 1) reflectivity in a sunlight wave band (0.3-2.5 microns) so as to minimize solar heating, and the device needs visible light to penetrate to achieve a good lighting effect, so that the solar high-reflectivity wave band is limited to 0.8-2.5 microns.
(2) Has high emissivity in an atmosphere transparent window (8-13 μm).
Phase change layer:
the key component for realizing the characteristic is the phase change layer, the thermotropic phase change characteristic of the phase change material is utilized, the optical properties are different before and after phase change, the absorption coefficient of the phase change material is lower at 0.3-2.5 mu m, and the phase difference is larger at 8-13 mu m (the absorption coefficient at a high temperature state is higher, and the absorption coefficient at a low temperature state is lower). By means of the thermotropic phase change characteristic, the emissivity of the atmospheric window wave band is changed automatically according to the change of the environmental temperature under the condition of not needing energy input, and therefore dynamic regulation and control of the emissivity of the atmospheric window wave band can be achieved.
When the external environment temperature is higher than the phase change temperature of the phase change layer, sunlight irradiates the phase change layer through the antireflection film, and the phase change layer has a high infrared absorption coefficient, so that the phase change layer has high infrared emissivity PradThe absorption of energy in the solar band is also relatively low, i.e. PsunLow, meets the condition of radiation cooling, and the cooling power P can be known by the formula (1)netThe phase change layer can be higher, otherwise, if the external temperature is lower, the phase change layer does not have phase change, the emissivity is lower, and the cooling power P is lowernetCan be negative, and realizes the heating effect.
The phase change layer has infrared regulation and control performance, but the main wave band of energy radiated outwards by an atmospheric window and an object is 8-13 mu m, so that the resonant cavity is used for controlling the regulation and control wave band in order to have the regulation and control capability of wave band selectivity. On the other hand, the phase change layer has a significantly insufficient infrared absorption capacity (absorption of about 30%) in the high temperature metallic state at a thickness of 10-30nm, while most of the infrared light is transmitted (40%) and reflected (30%). To compensate for these problems, an F-P cavity is used to increase the absorption in the atmospheric window band. When the thickness of the F-P resonant cavity reaches a certain thickness, standing waves can be formed in a certain wave band, so that the absorption of the phase change layer at 8-13 mu m is increased, the absorption of the wave band outside an atmospheric window is obviously reduced, and the requirement of radiation refrigeration is met.
VO is preferable for the phase change layer2Material (vanadium dioxide), VO2The phase transition temperature is lowered from 68 ℃ to 25 ℃ in advance by using a doping process (in other embodiments, the temperature is not limited to 25 ℃ in the room temperature, depending on the application). The phase change layer VO2The phase transition temperature of the material is 68 ℃, and a regulation temperature is preset before preparation, wherein the regulation temperature is the phase transition temperature of the phase transition material. VO (vacuum vapor volume)2The phase transition temperature of (a) can be changed by doping or different preparation processes, wherein doping with ions of different valency states is the most common means. Setting the phase transition temperature of dioxygen in advance according to the requirement, and enabling the dioxygen to be in VO2Doping the film with ions of high valence state (e.g. Nb)5+、Ta5+、Mo6 +、W6+Etc.) can lower the phase transition temperature, and incorporate low valence ions (e.g., Al)3+、Cr3+、Fe3+Etc.) can increase the phase transition temperature, and the doping amount and the valence state have certain influence on the phase transition temperature. VO (vacuum vapor volume)2The phase transition temperature of the method is from 17 ℃ to 100 ℃ seen on the market at present, and the process is mature, so that a corresponding preparation method can be found, and the method can also be basically applied in a room temperature (25 ℃) state. And will not be described in detail herein.
The phase change layer on one side of the F-P resonant cavity is configured as vanadium dioxide, the middle infrared reflecting layer on the other opposite side is configured as a metal reflecting layer, the base material layer is made of 0.3-16 mu m transparent material and is BaF2、ZnSe、CaF2、MgF2、HfO2ZnS, ZnSe, etc.). The material used for the resonator should not be a phase change material so that its optical properties do not change with temperature changes over the room temperature range.
Choice of medium infrared reflecting layerAnd (3) ITO. Is the substrate material of the F-P resonant cavity, so that standing waves are formed in the cavity. The main function is to transmit the sunlight wave band light of 0.3-2.5 μm and reflect the mid-infrared light of 8-14 μm wave band, and the material used is ITO glass or SiO2Plating a layer of Ag, Au, Al film with thickness about 10 nm. The thickness of the antireflection film is between 80nm and 120 nm. The thickness of the phase change layer is 10 nm-30 nm. The thickness of the F-P resonant cavity layer is 500 nm-1200 nm. The thickness of the middle infrared reflecting layer is 300 nm-800 nm.
In this embodiment, the thickness of the antireflection film is selected to be 100 nm. The thickness of the phase change layer is 18 nm. The thickness of the F-P resonant cavity layer is 900 nm. The thickness of the medium infrared reflecting layer is 500 nm. The absorption and reflection information of the light under the structure can be obtained by measurement,
as shown in fig. 2, the solid line of the measured value of the temperature of 100 ℃ is transmittance, the dotted line is absorptivity, and the absorptivity is emissivity according to kirchhoff's law. The visible light transmittance is higher, the emissivity of the intermediate infrared band is higher, and a better cooling state can be achieved.
As shown in fig. 3, the solid line shows the transmittance and the dotted line shows the absorbance of the measurement value at a temperature of 0 ℃. The solid line shows the transmittance and the dotted line shows the absorbance. At the moment, the visible light transmittance still keeps a better state, but the emissivity of the intermediate infrared band is obviously reduced, and a better temperature rise state can be achieved.
In one embodiment, the above variation is only in the interval that the anti-reflection film is made of HfO2The thickness of the film is between 80nm and 120 nm. For example, the thickness is 100 nm.
In one embodiment, as a variation of the above, the interval is only that the mid-ir reflecting layer is made of metallic silver and has a thickness of 850nm to 20 nm. For example, the thickness is 10 nm.
The embodiment of the application provides an energy-saving window which is not provided with the self-adaptive adjusting film. And the self-adaptive adjusting film based on the phase-change material is attached to the window body.
The above embodiments are merely illustrative of the technical concepts and features of the present application, and the purpose of the embodiments is to enable those skilled in the art to understand the content of the present application and implement the present application, and not to limit the protection scope of the present application. All equivalent changes and modifications made according to the spirit of the present application are intended to be covered by the scope of the present application.
Claims (10)
1. An adaptive tuning film based on a phase change material, comprising:
a transparent substrate layer, characterized in that,
a middle infrared reflection layer is arranged on one side of the substrate layer, a phase change layer is arranged on the side, far away from the middle infrared reflection layer, of the substrate layer, and an antireflection film is arranged on the phase change layer;
the phase change layer comprises a thermally induced phase change material,
the phase change layer, the substrate layer and the intermediate infrared reflection layer jointly form an F-P resonant cavity, and the F-P resonant cavity is used for transmitting solar band light of 0.3-2.5 microns and reflecting intermediate infrared light of 8-14 microns.
2. The adaptive modulation film based on a phase change material of claim 1,
the phase change layer is a vanadium dioxide coating, and the phase change temperature of the phase change layer is reduced to a preset temperature by using a doping process in advance.
3. The adaptive modulation film based on a phase change material of claim 1,
the substrate layer is BaF2、ZnSe、CaF2、MgF2、HfO2One or the combination of ZnS and ZnSe.
4. The adaptive modulation film based on a phase change material of claim 1,
the medium infrared reflecting layer is a metal reflecting film layer made of ITO or SiO2A film containing Ag, Au or Al is plated on the surface of the substrate.
5. The adaptive modulation film based on a phase change material of claim 1,
the middle infrared reflecting layer is made of metal silver, and the thickness of the middle infrared reflecting layer is 5 nm-20 nm.
6. The adaptive modulation film based on phase change material as claimed in claim 1, wherein the thickness of the anti-reflection film is 80 nm-120 nm, and the thickness of the phase change layer is 10 nm-30 nm.
7. The adaptive modulation film based on a phase change material of claim 1,
the thickness of the F-P resonant cavity is 500 nm-1200 nm.
8. The adaptive modulation film based on a phase change material of claim 1,
the antireflection film comprises MgF2 material, and the thickness of the antireflection film is 80 nm-120 nm.
9. The adaptive modulation film based on a phase change material of claim 1,
the antireflection film is made of HfO2The thickness of the film is between 80nm and 120 nm.
10. An energy saving window, characterized in that the phase change material based adaptive adjustment film according to any one of claims 1 to 9 is provided, and the phase change material based adaptive adjustment film is attached to the energy saving window.
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