CN215582207U - High-voltage high-power silicon controlled rectifier device - Google Patents
High-voltage high-power silicon controlled rectifier device Download PDFInfo
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- CN215582207U CN215582207U CN202122105800.8U CN202122105800U CN215582207U CN 215582207 U CN215582207 U CN 215582207U CN 202122105800 U CN202122105800 U CN 202122105800U CN 215582207 U CN215582207 U CN 215582207U
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Abstract
The utility model discloses a high-voltage high-power silicon controlled rectifier device, which comprises an upper shell, wherein a lower shell is arranged at the bottom end of the upper shell, a bottom plate is arranged at the bottom end of the lower shell, a ceramic plate is arranged on the bottom plate, a silicon controlled rectifier chip is arranged inside the lower shell, a first connecting sheet is arranged at the top end of the silicon controlled rectifier chip, a first through hole is formed in the first connecting sheet, a first pressing sheet is arranged on the first connecting sheet, a first insulating sleeve is arranged on the first pressing sheet, a first pressing plate is arranged at the top end of the first insulating sleeve, a third connecting sheet is arranged at the top end of the silicon controlled rectifier chip, a third through hole is formed in the third connecting sheet, a third nut is arranged at the top end of the upper shell, and a second pressing sheet is arranged on the third connecting sheet; this novel simple structure through three fixed screw fixed connection of group on the clamp plate, when guaranteeing to connect stably, has reduced the use amount of fixed screw, has alleviateed the size of the whole weight and the volume of this silicon controlled rectifier, convenient to detach and installation, the maintenance of being convenient for.
Description
Technical Field
The utility model relates to the technical field of silicon controlled devices, in particular to a high-voltage high-power silicon controlled device.
Background
The controllable silicon has the advantages of small volume, high efficiency, long service life and the like, and can be used as a high-power driving device to realize the control of high-power equipment by using a low-power control; therefore, certain requirements are made on the market for the use of certain high-power thyristors; however, the existing high-power silicon controlled rectifier has a complex structure, is inconvenient to install, disassemble and maintain and influences use; therefore, a new high-voltage high-power thyristor device is needed in the present stage.
SUMMERY OF THE UTILITY MODEL
The present invention is directed to a high voltage high power thyristor device to solve the above problems in the prior art.
In order to solve the technical problems, the utility model provides the following technical scheme: the utility model provides a high-pressure high-power silicon controlled rectifier device, which comprises an upper shell, the bottom of epitheca is provided with the inferior valve, the bottom of inferior valve is provided with the bottom plate, be provided with the potsherd on the bottom plate, the inside of inferior valve is provided with the silicon controlled rectifier chip, the top of silicon controlled rectifier chip is provided with first connection piece, first through-hole has been seted up on the first connection piece, first connection piece is provided with first preforming, be provided with first insulating cover on the first preforming, the top of first insulating cover is provided with first clamp plate, the top of silicon controlled rectifier chip is provided with the third connection piece, the third through-hole has been seted up on the third connection piece, the top of epitheca is provided with the third nut, be provided with the second preforming on the third connection piece, be provided with the second insulating cover on the second preforming, the top of second insulating cover is provided with the second clamp plate.
Furthermore, one side of the upper shell is provided with a wiring port, and the top end of the upper shell is provided with a first nut respectively.
Furthermore, the first pressing plate is connected with a first fixing screw through a bolt, and the first fixing screw penetrates through the ceramic plate to be in threaded connection with the bottom plate.
Furthermore, a second connecting piece is arranged at the bottom end of the silicon controlled rectifier chip, a second through hole is formed in the second connecting piece, and a second nut is arranged at the bottom end, corresponding to the second through hole, of the lower shell.
Furthermore, a second fixing screw is connected to the second pressing plate through a bolt, and the second fixing screw penetrates through the ceramic plate and is in threaded connection with the bottom plate.
Compared with the prior art, the utility model has the following beneficial effects: this novel simple structure through three fixed screw fixed connection of group on the clamp plate, when guaranteeing to connect stably, has reduced the use amount of fixed screw, has alleviateed the size of the whole weight and the volume of this silicon controlled rectifier, convenient to detach and installation, the maintenance of being convenient for.
Drawings
The accompanying drawings, which are included to provide a further understanding of the utility model and are incorporated in and constitute a part of this specification, illustrate embodiments of the utility model and together with the description serve to explain the principles of the utility model and not to limit the utility model. In the drawings:
FIG. 1 is a schematic overall perspective view of the present invention;
FIG. 2 is a schematic view of the overall top view of the present invention;
FIG. 3 is a schematic view of the overall exploded perspective structure of the present invention;
the method comprises the following steps: 1. an upper shell; 2. a lower case; 3. a base plate; 4. a wiring port; 5. a ceramic plate; 6. a silicon controlled chip; 7. a first connecting piece; 8. a first through hole; 9. a first nut; 10. a first tablet; 11. a first insulating sleeve; 12. a first platen; 13. a first fixing screw; 14. a second connecting sheet; 15. a second through hole; 16. a second nut; 17. a third connecting sheet; 18. a third through hole; 19. a third nut; 20. a second tabletting; 21. a second insulating sleeve; 22. a second platen; 23. and a second fixing screw.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1-3, the present invention provides a technical solution: a high-voltage high-power silicon controlled rectifier device comprises an upper shell 1, a lower shell 2 is arranged at the bottom end of the upper shell 1, a bottom plate 3 is arranged at the bottom end of the lower shell 2, a ceramic plate 5 is arranged on the bottom plate 3, a silicon controlled rectifier chip 6 is arranged inside the lower shell 2, the top end of the silicon controlled chip 6 is provided with a first connecting sheet 7, the first connecting sheet 7 is provided with a first through hole 8, the first connecting sheet 7 is provided with a first pressing sheet 10, the first pressing sheet 10 is provided with a first insulating sleeve 11, the top end of the first insulating sleeve 11 is provided with a first pressing plate 12, a third connecting sheet 17 is arranged at the top end of the silicon controlled chip 6, a third through hole 18 is formed in the third connecting sheet 17, a third nut 19 is arranged at the top end of the upper shell 1, a second pressing sheet 20 is arranged on the third connecting sheet 17, a second insulating sleeve 21 is arranged on the second pressing sheet 20, and a second pressing plate 22 is arranged at the top end of the second insulating sleeve 21; one side of the upper shell 1 is provided with a wiring port 4, and the top end of the upper shell 1 is respectively provided with a first nut 9; a first fixing screw 13 is connected to the first pressing plate 12 through a bolt, and the first fixing screw 13 penetrates through the ceramic plate 5 and is in threaded connection with the bottom plate 3; a second connecting sheet 14 is arranged at the bottom end of the silicon controlled chip 6, a second through hole 15 is formed in the second connecting sheet 14, and a second nut 16 is arranged on the lower shell 2 corresponding to the bottom end of the second through hole 15; a second fixing screw 23 is connected to the second pressing plate 22 through a bolt, and the second fixing screw 23 penetrates through the ceramic plate 5 and is in threaded connection with the bottom plate 3; when the high-voltage high-power silicon controlled rectifier device is assembled, firstly, the ceramic wafer 5 is arranged on the bottom plate 3 and is fixedly installed through the installation holes, the ceramic wafer 5, the silicon controlled rectifier chip 6, the first connecting sheet 7, the first pressing sheet 10, the first insulating sleeve 11 and the first pressing plate 12 are sequentially installed in the lower shell 2, then, the ceramic wafer is fixedly installed through the three first fixing screws 13, then, the third connecting sheet 17 and the second connecting sheet 14 are sequentially arranged on the upper side and the lower side of the silicon controlled rectifier chip 6, then, the second pressing sheet 20, the second insulating sleeve 21 and the second pressing plate 22 are sequentially arranged on the third connecting sheet 17, finally, the ceramic wafer is fixedly installed through the second fixing screws 23, then, the upper shell 1 is clamped and installed on the lower shell 2, and the high-voltage high-power silicon controlled rectifier is assembled.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that changes may be made in the embodiments and/or equivalents thereof without departing from the spirit and scope of the utility model. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (5)
1. The utility model provides a high-pressure high-power silicon controlled rectifier device, includes epitheca (1), its characterized in that: the bottom end of the upper shell (1) is provided with a lower shell (2), the bottom end of the lower shell (2) is provided with a bottom plate (3), a ceramic plate (5) is arranged on the bottom plate (3), a silicon controlled chip (6) is arranged inside the lower shell (2), the top end of the silicon controlled chip (6) is provided with a first connecting plate (7), a first through hole (8) is formed in the first connecting plate (7), the first connecting plate (7) is provided with a first pressing plate (10), a first insulating sleeve (11) is arranged on the first pressing plate (10), the top end of the first insulating sleeve (11) is provided with a first pressing plate (12), the top end of the silicon controlled chip (6) is provided with a third connecting plate (17), a third through hole (18) is formed in the third connecting plate (17), a third nut (19) is arranged at the top end of the upper shell (1), and a second pressing plate (20) is arranged on the third connecting plate (17), a second insulating sleeve (21) is arranged on the second pressing plate (20), and a second pressing plate (22) is arranged at the top end of the second insulating sleeve (21).
2. The high voltage high power thyristor device according to claim 1, wherein: one side of the upper shell (1) is provided with a wiring port (4), and the top end of the upper shell (1) is provided with a first nut (9) respectively.
3. The high voltage high power thyristor device according to claim 1, wherein: the first pressing plate (12) is connected with a first fixing screw (13) through a bolt, and the first fixing screw (13) penetrates through the ceramic plate (5) to be in threaded connection with the bottom plate (3).
4. The high voltage high power thyristor device according to claim 1, wherein: the bottom end of the silicon controlled chip (6) is provided with a second connecting piece (14), a second through hole (15) is formed in the second connecting piece (14), and a second nut (16) is arranged on the lower shell (2) corresponding to the bottom end of the second through hole (15).
5. The high voltage high power thyristor device according to claim 1, wherein: and the second pressing plate (22) is connected with a second fixing screw (23) through a bolt, and the second fixing screw (23) penetrates through the ceramic plate (5) and is in threaded connection with the bottom plate (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122105800.8U CN215582207U (en) | 2021-09-02 | 2021-09-02 | High-voltage high-power silicon controlled rectifier device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122105800.8U CN215582207U (en) | 2021-09-02 | 2021-09-02 | High-voltage high-power silicon controlled rectifier device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN215582207U true CN215582207U (en) | 2022-01-18 |
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ID=79846146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202122105800.8U Active CN215582207U (en) | 2021-09-02 | 2021-09-02 | High-voltage high-power silicon controlled rectifier device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN215582207U (en) |
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2021
- 2021-09-02 CN CN202122105800.8U patent/CN215582207U/en active Active
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