CN215581091U - IGBT gate pole drive circuit - Google Patents
IGBT gate pole drive circuit Download PDFInfo
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- CN215581091U CN215581091U CN202121530207.1U CN202121530207U CN215581091U CN 215581091 U CN215581091 U CN 215581091U CN 202121530207 U CN202121530207 U CN 202121530207U CN 215581091 U CN215581091 U CN 215581091U
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Abstract
The application discloses an IGBT gate pole driving circuit, wherein a first sampling module is used for converting and outputting gate pole current when an IGBT is switched on into a corresponding first voltage signal, different amplification scale factors are provided through a first amplification module so as to amplify the first voltage signal and output a first control signal, and the first control signal is used for controlling the conduction state of a switched-on MOSFET; and the second sampling module converts the gate current when the IGBT is switched off and outputs the gate current as a corresponding second voltage signal, the second amplification module provides different amplification scale factors so as to amplify the second voltage signal and output a second control signal, and the second control signal is used for controlling the conduction state of the switching-off MOSFET. In this way, the gate current when the IGBT is turned on or off can be accurately controlled within a required range. The circuit structure of this application is simple, can practice thrift PCB board area occupied, reduces development cost.
Description
Technical Field
The application relates to the technical field of semiconductor driving circuits, in particular to an IGBT gate driving circuit.
Background
In the application of the IGBT, in order to reduce the influence of current di/dt at turn-on or voltage dv/dt at turn-off on the system, a control strategy of a multi-stage switch is usually adopted to drive the gate of the IGBT, as shown in fig. 1, by controlling the turn-on and turn-off of the MOSFET in fig. 1, resistors with different resistance values are combined to charge the gate, so that the change rate of the voltage of the gate of the IGBT can be controlled, and further the change rate of the gate current can be controlled.
However, the essence of the driving method is that the RC charging principle is followed, the gate current is uncontrollable in the switching process, and the gate oscillates in the switching process of the MOSFET, which even affects the collector current and collector-emitter voltage waveform of the IGBT; in addition, a plurality of switch paths are required to be arranged on the circuit design according to requirements, and the number of used MOSFET (metal oxide semiconductor field effect transistor), resistors and corresponding control circuits is large, so that more PCB (printed circuit board) area is occupied to a certain extent.
SUMMERY OF THE UTILITY MODEL
In view of this, it is desirable to provide an IGBT gate driving circuit capable of accurately controlling a gate current, saving an occupied area of a PCB, and reducing a development cost.
The technical scheme proposed by the application for achieving the purpose is as follows:
an IGBT gate drive circuit, the circuit includes control signal end, opens MOSFET pipe (Q1), cuts off MOSFET pipe (Q2), the drain electrode that opens MOSFET pipe (Q1) with the drain electrode electricity of cutting off MOSFET pipe (Q2) is connected to all be connected with the gate electricity of IGBT, the source electricity that opens MOSFET pipe (Q1) is connected the positive voltage end, the source electricity that cuts off MOSFET pipe (Q2) is connected the negative voltage end, IGBT gate drive circuit still includes:
the input end of the switch switching module is electrically connected with the control signal end, the output end of the switch switching module is electrically connected with the grid electrode of the on MOSFET (Q1) and the grid electrode of the off MOSFET (Q2), and the switch switching module is used for controlling the on and off of the on MOSFET (Q1) and the off MOSFET (Q2) according to the PWM signal; when one of the turn-on MOSFET (Q1) and the turn-off MOSFET (Q2) is in an on state, the other is in an off state;
the input end of the first sampling module is electrically connected to the source electrode of the turn-on MOSFET (Q1), and is used for sampling the current flowing through the turn-on MOSFET (Q1) when the turn-on MOSFET (Q1) is turned on, and outputting a corresponding first voltage signal according to the sampling result;
a first amplifying module, a first input end of which is electrically connected to an output end of the first sampling module, a second input end of which is electrically connected to the control signal end, an output end of which is electrically connected to a gate of the turn-on MOSFET (Q1), the first amplifying module is configured to adjust an amplification scaling factor according to the PWM signal and amplify a first voltage signal output by the first sampling module to output a corresponding first control signal, and the first control signal is configured to control a conduction state of the turn-on MOSFET (Q1) to control a gate current when the IGBT is turned on;
the input end of the second sampling module is electrically connected to the source electrode of the turn-off MOSFET, and is used for sampling the current flowing through the turn-off MOSFET (Q2) when the turn-off MOSFET (Q2) is turned on, and outputting a corresponding second voltage signal according to the sampling result;
the first input end of the second amplification module is electrically connected with the output end of the second sampling module, the second input end of the second amplification module is electrically connected with the control signal end, the output end of the second amplification module is electrically connected with the grid electrode of the turn-off MOSFET (Q2), the second amplification module is used for adjusting an amplification proportion coefficient according to the PWM signal and amplifying a second voltage signal output by the second sampling module so as to output a corresponding second control signal, and the second control signal is used for controlling the conduction state of the turn-off MOSFET (Q2) so as to control the gate current when the IGBT is turned off.
Further, the first amplifying module comprises an operational amplifier (AMP1), a MOSFET transistor (Q3), a resistor (R1), a resistor (R1), and a resistor (R3), the non-inverting input end of the operational amplifier (AMP1) is electrically connected with the output end of the first sampling module, the inverting input terminal of the operational amplifier (AMP1) is electrically connected to a power supply (VCC1) through the resistor (R1), the inverting input end of the operational amplifier (AMP1) is also electrically connected to the drain electrode of the MOSFET tube (Q3) through the resistor (R2), the source electrode of the MOSFET tube (Q3) is electrically connected with the power supply (VCC1), the grid electrode of the MOSFET (Q3) is electrically connected with the control signal end, the inverting input end of the operational amplifier (AMP1) is also electrically connected with the output end of the operational amplifier (AMP1) through the resistor (R3), the output end of the operational amplifier (AMP1) is electrically connected with the grid electrode of the turn-on MOSFET (Q1).
Further, the resistance value of the resistor (R1) is larger than that of the resistor (R3), and the resistance value of the resistor (R3) is larger than that of the resistor (R2).
Further, the second amplifying module comprises an operational amplifier (AMP2), a MOSFET tube (Q4), a resistor (R4), a resistor (R5), a resistor (R6), a resistor (R7) and a resistor (R8), wherein an inverting input terminal of the operational amplifier (AMP2) is electrically connected with an output terminal of the second sampling module through the resistor (R4), an inverting input terminal of the operational amplifier (AMP2) is also electrically connected with an output terminal of the operational amplifier (AMP2) through the resistor (R5), a non-inverting input terminal of the operational amplifier (AMP2) is grounded through the resistor (R6), a non-inverting input terminal of the operational amplifier (AMP2) is also connected with a power supply (VCC2) through the resistor (R7), a non-inverting input terminal of the operational amplifier (AMP2) is also electrically connected with a drain electrode of the MOSFET tube (Q4) through the resistor (R8), and a source electrode of the MOSFET tube (Q4) is electrically connected with the power supply (2), the grid electrode of the MOSFET (Q4) is electrically connected with the control signal end, and the output end of the operational amplifier (AMP2) is electrically connected with the grid electrode of the turn-off MOSFET (Q2).
Further, the resistance value of the resistor (R7) is larger than that of the resistor (R6), and the resistance value of the resistor (R7) is larger than that of the resistor (R8).
Further, the voltage of the positive voltage end is 15V, and the voltage of the negative voltage end is-10V
The IGBT gate driving circuit converts and outputs gate current when the IGBT is switched on or switched off into corresponding voltage signals through the sampling module, provides different amplification scale factors through the amplification module to amplify the voltage signals and output corresponding control signals, and the control signals are used for controlling the conduction state of switching on or switching off the MOSFET. In this way, the gate current when the IGBT is turned on or off can be accurately controlled within a required range. The circuit structure of this application is simple, can accurate control gate pole electric current, and practices thrift PCB board area occupied, reduces development cost.
Drawings
Fig. 1 is a circuit diagram of a conventional method for controlling the gate current of an IGBT.
Fig. 2 is a schematic circuit structure diagram of a preferred embodiment of the IGBT gate driving circuit provided in the present application.
Fig. 3 is a circuit diagram of a preferred embodiment of the first amplification block of fig. 2.
Fig. 4 is a circuit diagram of a preferred embodiment of the second amplifier module of fig. 2.
Description of the main elements
Switch switching module 10
Voltage measuring module 30
MOSFET transistors Q1, Q2, Q3, Q4
Operational amplifiers AMP1, AMP2
Resistors R1, R2, R3, R4, R5, and,
R6、R7、R8、R2、R2
Positive voltage terminal VDD
Negative voltage terminal VSS
Power supplies VCC1, VCC2
The following detailed description will further illustrate the utility model in conjunction with the above-described figures.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application will be further described in detail with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
Referring to fig. 2, fig. 2 is a schematic structural diagram of an IGBT gate driving circuit according to a preferred embodiment of the present application. The IGBT gate driving circuit comprises a switch switching module 10, a first sampling module 11, a first amplifying module 12, a second sampling module 21, a second amplifying module 22, a MOSFET Q1 and a MOSFET Q2.
The input end of the switch switching module 10 is electrically connected with the control signal end. The output end of the switching module 10 is electrically connected to the gate of the MOSFET Q1 and the gate of the MOSFET Q2.
And the source electrode of the turn-on MOSFET Q1 is electrically connected with a positive voltage end VDD. The drain electrode of the turn-on MOSFET Q1 is electrically connected with the drain electrode of the turn-off MOSFET Q2 and is used for being electrically connected with the gate electrode of the IGBT. The source electrode of the turn-off MOSFET Q2 is electrically connected with the negative voltage terminal VSS. In this embodiment, the voltage of the positive voltage terminal VDD is 15V, and the voltage of the negative voltage terminal VSS is-10V.
The input end of the first sampling module 11 is electrically connected to the source of the turn-on MOSFET Q1, and the output end of the first sampling module 11 is electrically connected to the first input end of the first amplifying module 12. The second input terminal of the first amplifying module 12 is electrically connected to the control signal terminal. The output terminal of the first amplifying module 12 is electrically connected to the gate of the turn-on MOSFET Q1.
The input end of the second sampling module 21 is electrically connected to the source of the turn-off MOSFET Q2, and the output end of the second sampling module 21 is electrically connected to the first input end of the second amplifying module 22. The second input terminal of the second amplifying module 22 is electrically connected to the control signal terminal. The output end of the second amplifying module 22 is electrically connected to the gate of the turn-off MOSFET Q2.
The control signal end is used for outputting a PWM signal.
The switch switching module 10 is configured to control the on and off of the on MOSFET Q1 and the off MOSFET Q2 according to the PWM signal. Wherein, when one of the turn-on MOSFET Q1 and the turn-off MOSFET Q2 is in an on state, the other is in an off state.
The first sampling module 11 is configured to sample a current flowing through the turn-on MOSFET Q1 when the turn-on MOSFET Q1 is turned on, and output a corresponding first voltage signal according to a sampling result.
The first amplifying module 12 is configured to adjust an amplification scale factor according to the PWM signal, and amplify the first voltage signal output by the first sampling module 11 to output a corresponding first control signal. The first control signal is used for controlling the conducting state of the turn-on MOSFET Q1, that is, the gate current of the IGBT when the IGBT is turned on is dynamically controlled by controlling different gate voltages of the turn-on MOSFET Q1.
The second sampling module 21 is configured to sample a current flowing through the turn-off MOSFET Q2 when the turn-off MOSFET Q2 is turned on, and output a corresponding second voltage signal according to a sampling result.
The second amplifying module 22 is configured to adjust an amplification scale factor according to the PWM signal, and amplify the second voltage signal output by the second sampling module 21 to output a corresponding second control signal. The second control signal is used to control the on-state of the turn-off MOSFET Q2, that is, to dynamically control the gate current when the IGBT turns off by controlling different gate voltages of the turn-off MOSFET Q2.
Referring to fig. 3, in the present embodiment, the first amplifying module 12 includes an operational amplifier AMP1, a MOSFET transistor Q3, and resistors R1-R3. The non-inverting input terminal of the operational amplifier AMP1 is electrically connected to the output terminal of the first sampling module 11. The inverting input terminal of the operational amplifier AMP1 is electrically connected to a power supply VCC1 through a resistor R1. The inverting input end of the operational amplifier AMP1 is electrically connected to the drain of a MOSFET Q3 through a resistor R2, the source of the MOSFET Q3 is electrically connected to the power supply VCC1, and the gate of the MOSFET Q3 is electrically connected to the control signal terminal. The inverting input terminal of the operational amplifier AMP1 is also electrically connected to the output terminal of the operational amplifier AMP1 through a resistor R3. The resistance value of the resistor R1 is greater than that of the resistor R3, and the resistance value of the resistor R3 is greater than that of the resistor R2. The output end of the operational amplifier AMP1 is electrically connected with the grid electrode of the turn-on MOSFET Q1.
The operational amplifier AMP1 is used to form a non-inverting proportional amplifying circuit, and the voltage v2 at the inverting input terminal of the operational amplifier AMP1 is equal to the voltage at the non-inverting input terminal thereof, i.e., the first voltage signal v1, according to the virtual short principle. The voltage at the output end of the operational amplifier AMP1, that is, the first control signal v3 ═ 1+ R3/z1 ═ v1+ vcc1 × R3/z1, wherein R3 is the resistance value of the resistor R3; VCC1 is the voltage value provided by power supply VCC 1; z1 is the resistance value formed by the resistor R1 and the resistor R2 at the inverting input of the operational amplifier AMP 1.
When the IGBT needs to be turned on, the switching module 10 controls the turn-on MOSFET Q1 to be turned on (the turn-off MOSFET Q2 is turned off), and at this time, the voltage at the output end of the operational amplifier AMP1, that is, the first control signal v3, will gradually control the on state of the MOSFET Q1. Specifically, during the first time period, the MOSFET Q3 is turned off under the control of the PWM signal, and at this time, by setting the resistance values of the resistors R1 and R3, the first control signal v3 is at a lower potential (the turned-on MOSFET Q1 operates in the linear region), so that the gate of the IGBT obtains a larger charging current Ipk. In the second time period, the MOSFET Q3 is turned on under the control of the PWM signal, and the resistance z1 formed by the resistor R1 connected in parallel with the resistor R2 is smaller than the resistance R1 of the resistor R1. At this time, by setting the resistance of the resistor R2, the first control signal v3 is at a higher potential (the turn-on MOSFET Q1 still operates in the linear region), so that the gate of the IGBT obtains a smaller charging current Ipf. In the third time period, when the gate voltage Vge of the IGBT rises to +15V, the gate current Ig of the IGBT decreases, and the first voltage signal V1 decreases, at which time the first control signal V3 will make the turn-on MOSFET Q1 fully turned on, i.e., operating in the saturation region.
The gate current Ig of the IGBT is increased, so that the first voltage signal v1 output by the first sampling module 11 is increased, and under the condition that the impedance z1 at the inverting input terminal of the operational amplifier AMP1 is unchanged, the first control signal v3 is increased, and the gate current Ig of the IGBT is decreased; and vice versa. Thus, the gate current Ig of the IGBT will be controlled within a desired range.
Referring to fig. 4, in the present embodiment, the second amplifying module 22 includes an operational amplifier AMP2, a MOSFET transistor Q4, and resistors R4-R8. The inverting input terminal of the operational amplifier AMP2 is electrically connected to the output terminal of the second sampling block 21 through a resistor R4. The inverting input terminal of the operational amplifier AMP2 is also electrically connected to the output terminal of the operational amplifier AMP2 through a resistor R5. The non-inverting input terminal of the operational amplifier AMP2 is grounded through a resistor R6, and the non-inverting input terminal of the operational amplifier AMP2 is further connected to a power source VCC2 through a resistor R7, in a preferred embodiment, the power source VCC2 and the power source VCC1 may be the same power source. The non-inverting input end of the operational amplifier AMP2 is electrically connected to the drain of a MOSFET Q4 through a resistor R8, the source of the MOSFET Q4 is electrically connected to the power supply VCC2, and the gate of the MOSFET Q4 is electrically connected to the control signal terminal. The resistance value of the resistor R7 is greater than that of the resistor R6, and the resistance value of the resistor R7 is greater than that of the resistor R8. The output end of the operational amplifier AMP2 is electrically connected with the grid electrode of the turn-off MOSFET Q2.
The operational amplifier AMP2 is used to form a non-inverting proportional amplifying circuit, and the voltage v5 of the inverting input terminal of the operational amplifier AMP2 is equal to the voltage v6 of the non-inverting input terminal thereof according to the virtual short principle. The output end voltage of the operational amplifier AMP2, namely, the second control signal v7 ═ 1+ R5/R4 ═ (vcc2 × R6)/(R6+ z2) — v4 × R5/R4, wherein R4, R5, and R6 are resistance values of the resistor R4, the resistor R5, and the resistor R6, respectively; VCC2 is the voltage value provided by power supply VCC 2; z2 is the resistance value formed by the resistor R6, the resistor R7 and the resistor R8.
When the IGBT needs to be turned off, the switching module 10 controls the turn-off MOSFET Q2 to be turned on (the turn-on MOSFET Q1 is turned off), and at this time, the output voltage v7 of the operational amplifier AMP2 will gradually control the turn-on state of the turn-off MOSFET Q2. Specifically, during the fourth period, the MOSFET Q4 is turned off under the control of the PWM signal, and at this time, by setting the resistances of the resistors R4 and R5, the second control signal v7 is at a higher potential (the turn-off MOSFET Q2 operates in the linear region), so that a larger discharge current Ipk' is obtained at the gate of the IGBT. In the fifth time period, the MOSFET Q4 is turned on under the control of the PWM signal, the impedance z2 at the non-inverting input of the operational amplifier AMP2 is decreased, the second control signal v7 is at a lower potential (the turn-off MOSFET Q2 still operates in the linear region), and the gate of the IGBT will get a smaller discharging current Ipf'. In the sixth time period, when the gate voltage Vge of the IGBT decreases to-10V, the gate current Ig of the IGBT decreases, and the second voltage signal V4 decreases, at which time the second control signal V7 will make the turn-off MOSFET Q2 fully turned on, i.e., operate in the saturation region.
The gate current Ig of the IGBT is increased, so that the first voltage signal v4 output by the second sampling module 21 is increased, and under the condition that the impedance z2 of the equidirectional input end of the operational amplifier AMP2 is unchanged, the second control signal v7 is decreased, and the gate current Ig of the IGBT is decreased; and vice versa. Thus, the gate current Ig of the IGBT will be controlled within a desired range.
The IGBT gate electrode driving circuit converts and outputs a gate electrode current when the IGBT is switched on into a corresponding first voltage signal through the first sampling module 11, provides different amplification scale factors through the first amplification module 12 so as to amplify the first voltage signal and output a first control signal, and the first control signal is used for controlling the conduction state of the switching-on MOSFET Q1; and the second sampling module 21 converts the gate current when the IGBT is turned off and outputs the gate current as a corresponding second voltage signal, and the second amplification module 22 provides different amplification scale factors to amplify the second voltage signal and output a second control signal, where the second control signal is used to control the on state of the turn-off MOSFET Q1. In this way, the gate current when the IGBT is turned on or off can be accurately controlled within a required range. The circuit structure of this application is simple, can accurate control gate pole electric current, and practices thrift PCB board area occupied, reduces development cost.
The above description is only exemplary of the present application and should not be taken as limiting the present application, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (6)
1. An IGBT gate drive circuit, the circuit includes control signal end, opens MOSFET pipe (Q1), shuts off MOSFET pipe (Q2), the drain electrode that opens MOSFET pipe (Q1) with the drain electrode electricity that shuts off MOSFET pipe (Q2) is connected to all be connected with the gate electricity of IGBT, the source electricity that opens MOSFET pipe (Q1) is connected the malleation end, the source electricity that shuts off MOSFET pipe (Q2) is connected the negative pressure end, its characterized in that, IGBT gate drive circuit still includes:
the input end of the switch switching module is electrically connected with the control signal end, the output end of the switch switching module is electrically connected with the grid electrode of the on MOSFET (Q1) and the grid electrode of the off MOSFET (Q2), and the switch switching module is used for controlling the on and off of the on MOSFET (Q1) and the off MOSFET (Q2) according to the PWM signal; when one of the turn-on MOSFET (Q1) and the turn-off MOSFET (Q2) is in an on state, the other is in an off state;
the input end of the first sampling module is electrically connected to the source electrode of the turn-on MOSFET (Q1), and is used for sampling the current flowing through the turn-on MOSFET (Q1) when the turn-on MOSFET (Q1) is turned on, and outputting a corresponding first voltage signal according to the sampling result;
a first amplifying module, a first input end of which is electrically connected to an output end of the first sampling module, a second input end of which is electrically connected to the control signal end, an output end of which is electrically connected to a gate of the turn-on MOSFET (Q1), the first amplifying module is configured to adjust an amplification scaling factor according to the PWM signal and amplify a first voltage signal output by the first sampling module to output a corresponding first control signal, and the first control signal is configured to control a conduction state of the turn-on MOSFET (Q1) to control a gate current when the IGBT is turned on;
the input end of the second sampling module is electrically connected to the source electrode of the turn-off MOSFET, and is used for sampling the current flowing through the turn-off MOSFET (Q2) when the turn-off MOSFET (Q2) is turned on, and outputting a corresponding second voltage signal according to the sampling result;
the first input end of the second amplification module is electrically connected with the output end of the second sampling module, the second input end of the second amplification module is electrically connected with the control signal end, the output end of the second amplification module is electrically connected with the grid electrode of the turn-off MOSFET (Q2), the second amplification module is used for adjusting an amplification proportion coefficient according to the PWM signal and amplifying a second voltage signal output by the second sampling module so as to output a corresponding second control signal, and the second control signal is used for controlling the conduction state of the turn-off MOSFET (Q2) so as to control the gate current when the IGBT is turned off.
2. The IGBT gate drive circuit according to claim 1, wherein the first amplifying module comprises an operational amplifier (AMP1), a MOSFET (Q3), a resistor (R1), a resistor (R1), and a resistor (R3), wherein a non-inverting input terminal of the operational amplifier (AMP1) is electrically connected to an output terminal of the first sampling module, an inverting input terminal of the operational amplifier (AMP1) is electrically connected to a power supply (VCC1) through the resistor (R1), an inverting input terminal of the operational amplifier (AMP1) is further electrically connected to a drain terminal of the MOSFET (Q3) through the resistor (R2), a source terminal of the MOSFET (Q3) is electrically connected to the power supply (VCC1), a gate terminal of the MOSFET (AMP 3) is electrically connected to the control signal terminal, and an inverting input terminal of the operational amplifier (AMP1) is further electrically connected to an output terminal of the operational amplifier (AMP1) through the resistor (R3), the output end of the operational amplifier (AMP1) is electrically connected with the grid electrode of the turn-on MOSFET (Q1).
3. The IGBT gate drive circuit of claim 2, wherein the resistance of the resistor (R1) is greater than the resistance of the resistor (R3), and the resistance of the resistor (R3) is greater than the resistance of the resistor (R2).
4. The IGBT gate drive circuit according to claim 1, wherein the second amplifying module comprises an operational amplifier (AMP2), a MOSFET transistor (Q4), a resistor (R4), a resistor (R5), a resistor (R6), a resistor (R7) and a resistor (R8), wherein an inverting input terminal of the operational amplifier (AMP2) is electrically connected to an output terminal of the second sampling module through the resistor (R4), an inverting input terminal of the operational amplifier (AMP2) is further electrically connected to an output terminal of the operational amplifier (AMP2) through the resistor (R5), a non-inverting input terminal of the operational amplifier (AMP2) is grounded through the resistor (R6), a non-inverting input terminal of the operational amplifier (AMP2) is further connected to a power supply (VCC2) through the resistor (R7), and a non-inverting input terminal of the operational amplifier (AMP2) is further electrically connected to a drain of the MOSFET transistor (Q4) through the resistor (R8), the source electrode of the MOSFET (Q4) is electrically connected with the power supply (VCC2), the grid electrode of the MOSFET (Q4) is electrically connected with the control signal end, and the output end of the operational amplifier (AMP2) is electrically connected with the grid electrode of the turn-off MOSFET (Q2).
5. The IGBT gate drive circuit of claim 4, wherein the resistance of the resistor (R7) is greater than the resistance of the resistor (R6), and the resistance of the resistor (R7) is greater than the resistance of the resistor (R8).
6. The IGBT gate drive circuit of claim 1, wherein the voltage at the positive voltage end is 15V and the voltage at the negative voltage end is-10V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121530207.1U CN215581091U (en) | 2021-07-06 | 2021-07-06 | IGBT gate pole drive circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121530207.1U CN215581091U (en) | 2021-07-06 | 2021-07-06 | IGBT gate pole drive circuit |
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| Publication Number | Publication Date |
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| CN215581091U true CN215581091U (en) | 2022-01-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202121530207.1U Withdrawn - After Issue CN215581091U (en) | 2021-07-06 | 2021-07-06 | IGBT gate pole drive circuit |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113572464A (en) * | 2021-07-06 | 2021-10-29 | 深圳青铜剑技术有限公司 | IGBT drive circuit with controllable gate current |
| CN113572464B (en) * | 2021-07-06 | 2024-07-05 | 深圳青铜剑技术有限公司 | IGBT driving circuit with controllable gate current |
-
2021
- 2021-07-06 CN CN202121530207.1U patent/CN215581091U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113572464A (en) * | 2021-07-06 | 2021-10-29 | 深圳青铜剑技术有限公司 | IGBT drive circuit with controllable gate current |
| CN113572464B (en) * | 2021-07-06 | 2024-07-05 | 深圳青铜剑技术有限公司 | IGBT driving circuit with controllable gate current |
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Granted publication date: 20220118 Effective date of abandoning: 20240705 |
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| AV01 | Patent right actively abandoned |
Granted publication date: 20220118 Effective date of abandoning: 20240705 |