CN215577463U

CN215577463U - Display device and electronic device

Info

Publication number: CN215577463U
Application number: CN202121683945.XU
Authority: CN
Inventors: 马悦; 苏子芳
Original assignee: InfoVision Optoelectronics Kunshan Co Ltd
Current assignee: InfoVision Optoelectronics Kunshan Co Ltd
Priority date: 2021-07-23
Filing date: 2021-07-23
Publication date: 2022-01-18
Anticipated expiration: 2031-07-23

Abstract

The utility model provides a display device which comprises a TFT array substrate, wherein the TFT array substrate comprises a plurality of sub-substrates, the TFT array substrate is formed by splicing the plurality of sub-substrates, each sub-substrate comprises a plurality of scanning lines, a plurality of data lines and a plurality of pixel units formed by insulating, crossing and limiting the plurality of scanning lines and the plurality of data lines, a pixel electrode and a Micro LED are arranged in each pixel unit, the pixel electrode is connected with the adjacent scanning lines and the adjacent data lines through the TFT, and the Micro LED is electrically connected with the pixel electrode. According to the utility model, the TFT array substrate is formed by splicing a plurality of sub-substrates, so that the transfer difficulty of Micro LEDs can be reduced, and the product yield is improved. The utility model also provides an electronic device.

Description

Display device and electronic device

Technical Field

The present invention relates to the field of display technologies, and in particular, to a display device and an electronic device.

Background

The Micro LED (micron light emitting diode) display technology is a display technology in which a self-luminous micron-sized LED is used as a light emitting pixel unit and is assembled on a driving panel to form a high-density LED array. Since Micro LEDs have features of small size, high integration, self-luminescence, etc., they have advantages in Display such as brightness, resolution, contrast, power consumption, lifetime, response speed, and thermal stability compared to LCD (Liquid Crystal Display) and OLED (Organic Light-Emitting Display).

The core technology of Micro LED manufacture lies in the Micro process technology and the bulk transfer technology, wherein the technical difficulty of the bulk transfer has two parts:

(1) the LED is transferred only by the lighted LED crystal epitaxial layer, the primary substrate is not transferred, the carrying thickness is only 3%, and meanwhile, the Micro LED is extremely small in size and needs a more refined operation technology;

(2) one transfer requires several tens of thousands or even hundreds of thousands of LEDs to be moved, which is enormous.

The operation difficulty of the Micro LEDs in the transfer process is high, the number of the Micro LEDs is large, the production efficiency is influenced, and when some Micro LEDs are transferred to be in a problem, the yield of the whole display panel is influenced, so that the yield of products is low.

SUMMERY OF THE UTILITY MODEL

The utility model aims to provide a display device, which aims to overcome the defects in the prior art, and the TFT array substrate is formed by splicing a plurality of sub-substrates, so that the transfer difficulty of Micro LEDs can be reduced, and the product yield can be improved.

The utility model provides a display device which comprises a TFT array substrate, wherein the TFT array substrate comprises a plurality of sub-substrates, the TFT array substrate is formed by splicing the plurality of sub-substrates, each sub-substrate comprises a plurality of scanning lines, a plurality of data lines and a plurality of pixel units formed by insulating, crossing and limiting the plurality of scanning lines and the plurality of data lines, a pixel electrode and a Micro LED are arranged in each pixel unit, the pixel electrode is connected with the adjacent scanning lines and the adjacent data lines through the TFT, and the Micro LED is electrically connected with the pixel electrode.

Further, every the sub-base plate still includes the substrate base plate, many the scanning line, many the data line the TFT the pixel electrode with Micro LED all set up in on the substrate base plate, it is a plurality of the substrate base plate of sub-base plate is according to the size of TFT array substrate is neatly spliced.

Further, the distance between two adjacent Micro LEDs in the pixel units is 50-500 um.

Further, all the Micro LEDs are self-luminous in the same color.

Further, all the Micro LEDs are self-luminous in one of blue, red or green.

Furthermore, the light-emitting side of the TFT array substrate is provided with an RGB color resistance layer and a black matrix layer.

Furthermore, the display device further comprises a color film substrate, the color film substrate is arranged opposite to the TFT array substrate, and an RGB color resistance layer and a black matrix layer are arranged on one side of the color film substrate close to the TFT array substrate.

Further, the RGB color resistance layer is an RGB quantum rod film layer.

Further, the black matrix layer includes a plurality of black stoppers, each of the black stoppers corresponding to one of the TFTs.

The utility model also provides an electronic device comprising the display device.

According to the display device provided by the utility model, the TFT array substrate is divided into the plurality of sub-substrates, the number of Micro LEDs on the sub-substrates is small, the Micro LEDs are easy to realize when a small number of Micro LEDs are transferred to the sub-substrates, then the plurality of sub-substrates are spliced to form the TFT array substrate with the required size, compared with a method for directly transferring a large number of Micro LEDs to the TFT array substrate, the difficulty in transferring the Micro LEDs is reduced, and the yield and the production efficiency of the TFT array substrate are improved. Meanwhile, the size of the sub-substrate can be adjusted according to the number of Micro LEDs transferred at each time, and the size of the TFT array substrate can be adjusted according to the number of the sub-substrates, so that the process flexibility is good, and various product requirements can be met. Meanwhile, the TFT array substrate is formed by splicing a plurality of sub-substrates, so that each sub-substrate can be detected firstly in the manufacturing process to eliminate the bad sub-substrates, and the yield of the TFT array substrate is further improved.

Drawings

Fig. 1 is a schematic circuit diagram of a TFT array substrate according to a first embodiment of the present invention.

Fig. 2 is a schematic diagram of the sub-substrates in fig. 1 spliced to form a TFT array substrate.

Fig. 3 is a schematic cross-sectional view of the TFT array substrate of fig. 1.

Fig. 4 is a schematic cross-sectional view of a TFT array substrate according to a second embodiment of the present invention.

Detailed Description

The following detailed description of embodiments of the present invention is provided in connection with the accompanying drawings and examples. The following examples are intended to illustrate the utility model but are not intended to limit the scope of the utility model.

The terms "first," "second," "third," "fourth," and the like in the description and in the claims, if any, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order.

The terms of orientation, up, down, left, right, front, back, top, bottom, and the like (if any) referred to in the specification and claims of the present invention are defined by the positions of structures in the drawings and the positions of the structures relative to each other, only for the sake of clarity and convenience in describing the technical solutions. It is to be understood that the use of the directional terms should not be taken to limit the scope of the claims.

As shown in fig. 1 to fig. 3, the display device according to the embodiment of the present invention includes a TFT (thin film transistor) array substrate 1, where the TFT array substrate 1 includes a plurality of sub-substrates 10, and the TFT array substrate 1 is formed by neatly splicing the plurality of sub-substrates 10. Each sub-substrate 10 includes a plurality of scan lines 11, a plurality of data lines 12, and a plurality of pixel cells P defined by the scan lines 11 and the data lines 12 crossing each other in an insulating manner, each pixel cell P has a pixel electrode 13 and a Micro LED (Micro light emitting diode) 14 disposed therein, the pixel electrode 13 is connected to the scan line 11 and the data line 12 adjacent thereto through a TFT15, and the Micro LED14 is electrically connected to the pixel electrode 13.

Specifically, the TFT15 is used to control the switching of the Micro LED14, and controls the light emission luminance of the Micro LED14 by controlling the magnitude of current/voltage. Each sub-substrate 10 can be controlled by an independent signal, i.e., the signal control between the sub-substrates 10 is not affected (of course, the signal control may be performed simultaneously for all sub-substrates 10).

In the prior art, the whole TFT array substrate 1 is of an integrated structure, when the Micro LED14 is transferred to the TFT array substrate 1, the number of the Micro LED14 transferred at each time is large, the operation difficulty is high, and the production efficiency and the yield of products are influenced. In the embodiment, the TFT array substrate 1 is divided into the plurality of sub-substrates 10, the number of Micro LEDs 14 on each sub-substrate 10 is small, the Micro LEDs 14 are easily transferred to the sub-substrates 10, the production yield and the production efficiency of the sub-substrates 10 are improved, and then the plurality of sub-substrates 10 are neatly spliced to form the TFT array substrate 1, so that compared with a method of directly transferring a large number of Micro LEDs 14 to the TFT array substrate 1, the difficulty of transferring the Micro LEDs 14 is reduced, and the yield and the production efficiency of the TFT array substrate 1 are improved.

Meanwhile, the size of the sub-substrate 10 may be adjusted according to the number of the Micro LEDs 14 transferred each time, for example, nine Micro LEDs 14 are provided on each sub-substrate 10 in the embodiment (of course, the number of the Micro LEDs 14 in actual production may be more), so as to increase the process flexibility. The size of the TFT array substrate 1 can be adjusted according to the number of the sub-substrates 10, for example, in the embodiment, the TFT array substrate 1 is formed by splicing six sub-substrates 10, and the six sub-substrates 10 are combined in an arrangement manner of 3X2 (certainly, the number of the sub-substrates 10 in actual production may be more), so the process flexibility is good, and various product requirements can be met.

Further, in this embodiment, the plurality of sub-substrates 10 may be spliced by a transparent adhesive to form the TFT array substrate 1, and of course, the plurality of sub-substrates 10 may also be spliced and fixed by other methods.

Further, referring to fig. 2 and fig. 3, in the present embodiment, each sub-substrate 10 further includes a substrate 16, the plurality of scan lines 11, the plurality of data lines 12, the TFTs 15, the pixel electrodes 13, and the Micro LEDs 14 are disposed on the substrate 16, and the substrate 16 of the plurality of sub-substrates 10 is neatly spliced according to the size of the TFT array substrate 1. That is, after each sub-substrate 10 is manufactured, the required sub-substrates 10 are spliced according to the requirement by the substrate 16 of the plurality of sub-substrates 10 to form the TFT array substrate 1.

Further, as shown in FIG. 1, in the present embodiment, the distance between the Micro LEDs 14 in two adjacent pixel units P is 50-500 um (micrometer). Since the size of the Micro LEDs 14 is much smaller than the distance between two adjacent Micro LEDs 14, the multiple sub-substrates 10 can be connected "seamlessly" when being spliced to form the TFT array substrate 1 (i.e., the splicing gap between two adjacent sub-substrates 10 cannot be seen when the TFT array substrate 1 is displaying).

Further, as shown in fig. 3, in the present embodiment, all the Micro LEDs 14 are self-luminous in the same color. Since all the Micro LEDs 14 are of the same color, that is, all the sub-substrates 10 are of the same color, when a plurality of sub-substrates 10 are spliced to form the TFT array substrate 1, the arrangement sequence and direction of the sub-substrates 10 do not need to be considered (that is, directional arrangement and splicing are not needed), and only the number of the sub-substrates 10 required is selected according to the size requirement of the TFT array substrate 1 to splice, thereby facilitating the splicing operation.

Further, in the present embodiment, all the Micro LEDs 14 are self-luminous in one of blue, red or green.

Preferably, as shown in fig. 3, in the present embodiment, all of the Micro LEDs 14 are blue in self-luminescence.

Further, as shown in fig. 3, in the present embodiment, the light exit side of the TFT array substrate 1 (i.e., the upper side of the TFT array substrate 1 in fig. 3) is provided with an RGB color resist layer 3 (i.e., three colors including red R, green G, and blue B), so as to realize full-color display of the TFT array substrate 1.

Further, in the present embodiment, the RGB color-resist layer 3 is an RGB quantum rod film layer.

Specifically, referring to fig. 1 and fig. 3, in the present embodiment, the TFT15 includes a gate 151, a source 152, a drain 153 and an active layer 154(a-si), the gate 151 is connected to the scan line 11, the source 152 is connected to the data line 12, and the drain 153 is connected to the pixel electrode 13. The TFT array substrate 1 is provided with a planarization layer 17 covering the pixel electrodes 13 and the Micro LED14, and the RGB color resist layer 3 is formed on the planarization layer 17. The light exit side of the TFT array substrate 1 is also provided with a black matrix layer 4, and the black matrix layer 4 includes a plurality of black stoppers 41, each black stopper 41 corresponding to one TFT 15.

Specifically, in this embodiment, the manufacturing process of the TFT array substrate 1 is as follows: firstly, respectively manufacturing a Micro LED14 and a sub-substrate 10 (the sub-substrate 10 is not provided with a Micro LED14), then transferring a plurality of Micro LEDs 14 to the sub-substrate 10 according to requirements, then splicing the plurality of sub-substrates 10 according to requirements to form a TFT array substrate 1, and finally manufacturing an RGB color resistance layer 3 and a black matrix layer 4 on the TFT array substrate 1.

As shown in fig. 4, in another embodiment, the display device further includes a color filter substrate 2, the color filter substrate 2 is disposed opposite to the TFT array substrate 1, and the color filter substrate 2 is provided with an RGB color resist layer 3 and a black matrix layer 4 on a side close to the TFT array substrate 1. The manufacturing process of the display device comprises the following steps: firstly, respectively manufacturing a Micro LED14 and a sub-substrate 10 (the sub-substrate 10 is not provided with a Micro LED14), then transferring a plurality of Micro LEDs 14 to the sub-substrate 10 according to requirements, and splicing the plurality of sub-substrates 10 according to requirements to form a TFT array substrate 1; and then manufacturing a color film substrate 2, and finally combining the color film substrate 2 and the TFT array substrate 1 to form a display device.

The embodiment also provides an electronic device, which comprises the display device, and the electronic device can be a mobile phone, a computer and the like.

The display device provided by the embodiment of the utility model has the advantages that:

1. by dividing the TFT array substrate 1 into a plurality of sub-substrates 10, the number of Micro LEDs 14 on each sub-substrate 10 is small, the Micro LEDs 14 are easy to transfer to the sub-substrates 10, the production yield and the production efficiency of the sub-substrates 10 are improved, then the sub-substrates 10 are orderly spliced to form the TFT array substrate 1, compared with a method of directly transferring a large number of Micro LEDs 14 to the TFT array substrate 1, the difficulty of transferring the Micro LEDs 14 is reduced, and the yield and the production efficiency of the TFT array substrate 1 are improved;

2. because the TFT array substrate 1 is formed by splicing a plurality of sub-substrates 10, each sub-substrate 10 can be detected first in the manufacturing process to eliminate the defective sub-substrate 10, thereby further improving the yield of the TFT array substrate 1;

3. the self-luminescence of all Micro LEDs 14 is the same color, so that when a plurality of sub-substrates 10 are spliced to form the TFT array substrate 1, the arrangement sequence and the direction of the sub-substrates 10 do not need to be considered, the number of the required sub-substrates 10 is only required to be selected according to the size requirement of the TFT array substrate 1 for splicing, and the operation is convenient;

4. the size of the sub-substrate 10 can be adjusted according to the number of the Micro LEDs 14 transferred each time, and the size of the TFT array substrate 1 can be adjusted according to the number of the sub-substrates 10, so that the process flexibility is good, and various product requirements can be met.

The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.

Claims

1. The display device comprises a TFT array substrate (1) and is characterized in that the TFT array substrate (1) comprises a plurality of sub-substrates (10), the TFT array substrate (1) is formed by splicing the plurality of sub-substrates (10), each sub-substrate (10) comprises a plurality of scanning lines (11), a plurality of data lines (12) and a plurality of pixel units (P) formed by the plurality of scanning lines (11) and the plurality of data lines (12) in an insulating and crossing mode, a pixel electrode (13) and a Micro LED (14) are arranged in each pixel unit (P), the pixel electrode (13) is connected with the adjacent scanning lines (11) and the adjacent data lines (12) through a TFT (15), and the Micro LED (14) is electrically connected with the pixel electrode (13).

2. The display device according to claim 1, wherein each of the sub-substrates (10) further comprises a substrate (16), the plurality of scan lines (11), the plurality of data lines (12), the TFTs (15), the pixel electrodes (13), and the Micro LEDs (14) are disposed on the substrate (16), and the substrate substrates (16) of the plurality of sub-substrates (10) are neatly connected according to the size of the TFT array substrate (1).

3. The display device according to claim 1, wherein the distance between the Micro LEDs (14) in two adjacent pixel units (P) is 50-500 um.

4. The display device according to claim 1, wherein all of the Micro LEDs (14) self-emit light of the same color.

5. The display device according to claim 4, wherein all of the Micro LEDs (14) are self-luminescent in one of blue, red or green.

6. The display device according to claim 1, wherein the light-emitting side of the TFT array substrate (1) is provided with an RGB color resist layer (3) and a black matrix layer (4).

7. The display device according to claim 1, further comprising a color filter substrate (2), wherein the color filter substrate (2) is disposed opposite to the TFT array substrate (1), and an RGB color resist layer (3) and a black matrix layer (4) are disposed on one side of the color filter substrate (2) close to the TFT array substrate (1).

8. The display device according to any of claims 6 or 7, wherein the RGB color-resist layer (3) is an RGB quantum rod film layer.

9. The display device according to any one of claims 6 or 7, wherein the black matrix layer (4) includes a plurality of black blocks (41), each of the black blocks (41) corresponding to one of the TFTs (15).

10. An electronic device characterized by comprising the display device according to any one of claims 1 to 9.