CN215575496U

CN215575496U - High-density switch card

Info

Publication number: CN215575496U
Application number: CN202023204841.4U
Authority: CN
Inventors: 邱勇涛
Original assignee: Shenzhen Jiadujia Electronic Technology Co ltd
Current assignee: Shenzhen Jiadujia Electronic Technology Co ltd
Priority date: 2020-12-25
Filing date: 2020-12-25
Publication date: 2022-01-18
Anticipated expiration: 2030-12-25

Abstract

The utility model relates to the technical field of PCB testing, in particular to a high-density switch card, wherein a double-density testing head is electrically connected with an AB30S solid-state relay, an AB30S solid-state relay is electrically connected with a M876 single chip microcomputer, the M876 single chip microcomputer is connected with an upper computer through an upper computer interface, the M876 single chip microcomputer comprises a M876 chip U3 and a M876 chip U4, the M876 chip U3 and the M876 chip U4 are respectively and electrically connected with an AB30S solid-state relay, and the double-density testing head is connected with the AB30S solid-state relay through a connector T. Compared with the prior art, the high-density switch card saves cost and space, simplifies and optimizes a circuit structure, is reasonable in layout, and is beneficial to improving the test efficiency and the test data precision.

Description

High-density switch card

[ technical field ] A method for producing a semiconductor device

The utility model relates to the technical field of PCB testing, in particular to a high-density switch card.

[ background of the utility model ]

The PCB test board card in the prior art generally adopts an analog chip expansion circuit, and has the disadvantages of complex circuit, more separated elements, high cost and disordered layout.

[ Utility model ] content

In order to overcome the above problems, the present invention provides a high-density switch card which can effectively solve the above problems.

The utility model provides a technical scheme for solving the technical problems, which comprises the following steps: the high-density switch card comprises a dual-density test head, an AB30S solid-state relay and an M876 single chip microcomputer, wherein the dual-density test head is electrically connected with the AB30S solid-state relay, the AB30S solid-state relay is electrically connected with the M876 single chip microcomputer, and the M876 single chip microcomputer is connected with an upper computer through an upper computer interface; the M876 singlechip comprises an M876 chip U3 and an M876 chip U4, and the M876 chip U3 and the M876 chip U4 are electrically connected to the AB30S solid-state relay respectively; the dual-density test head is connected with an AB30S solid-state relay through a connector T.

Preferably, the M876 chip U3 is provided with an interface a0, an interface a1, an interface a2, an interface A3, an interface A4, an interface A5, an interface A6, and an interface A7, and the AB30S solid-state relay is provided with an interface a01, an interface a03, an interface a05, an interface a07, an interface a09, an interface a11, an interface a13, and an interface a15, where the interface a01, the interface a03, the interface a05, the interface a07, the interface a09, the interface a11, the interface a13, and the interface a15 are respectively connected to an interface a0, an interface a1, an interface a2, an interface A3, an interface A4, an interface A5, an interface A6, and an interface A7 on the M876 chip U3.

Preferably, the M876 chip U4 is provided with an interface a0, an interface a1, an interface a2, an interface A3, an interface A4, an interface A5, an interface A6, and an interface A7, and the AB30S solid-state relay is provided with an interface a02, an interface a04, an interface a06, an interface a08, an interface a10, an interface a12, an interface a14, and an interface a16, where the interface a02, the interface a04, the interface a06, the interface a08, the interface a10, the interface a12, the interface a14, and the interface a16 are respectively connected to an interface a0, an interface a1, an interface a2, an interface A3, an interface A4, an interface A5, an interface A6, and an interface A7 on the M876 chip U4.

Preferably, the dual density test head is of the type CON-32X 2.

Compared with the prior art, the high-density switch card adopts the M876 single chip microcomputer and the dual-density test head, saves cost and space, simplifies and optimizes a circuit structure, is reasonable in layout, and is beneficial to improving test efficiency and test data precision.

[ description of the drawings ]

FIG. 1 is a structural frame diagram of the high density switch card of the present invention;

FIG. 2 is a schematic circuit diagram of a U3 chip of the M876 single chip of the M876 high-density switch card of the utility model;

FIG. 3 is a schematic diagram of an AB30S solid state relay circuit for the high density switch card of the present invention;

FIG. 4 is a schematic diagram of the dual density test head circuit of the high density switch card of the present invention.

[ detailed description ] embodiments

In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the utility model and are not intended to limit the utility model.

It should be noted that all directional indications (such as up, down, left, right, front, and back … …) in the embodiments of the present invention are limited to relative positions on a given view, not absolute positions.

In addition, the descriptions related to "first", "second", etc. in the present invention are only for descriptive purposes and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.

Referring to fig. 1 to 4, the high-density switch card of the present invention includes a dual density test head, an AB30S solid state relay, and a M876 single chip microcomputer, wherein the dual density test head is electrically connected to the AB30S solid state relay, the AB30S solid state relay is electrically connected to the M876 single chip microcomputer, and the M876 single chip microcomputer is connected to an upper computer through an upper computer interface.

The M876 single chip microcomputer comprises an M876 chip U3 and an M876 chip U4, the M876 chip U3 and the M876 chip U4 are electrically connected to an AB30S solid-state relay respectively, and the M876 chip U3 and the M876 chip U4 are chips with the same model. The M876 chip U3 is provided with an interface A0, an interface A1, an interface A2, an interface A3, an interface A4, an interface A5, an interface A6 and an interface A7, the AB30S solid-state relay is provided with an interface A01, an interface A03, an interface A05, an interface A07, an interface A09, an interface A11, an interface A13 and an interface A15, the interface A01, the interface A03, the interface A05, the interface A07, the interface A09, the interface A11, the interface A13 and the interface A15 are respectively connected with the interface A0, the interface A1, the interface A2, the interface A3, the interface A4, the interface A5, the interface A6 and the interface A7 on the M876 chip U3; the M876 chip U4 is provided with an interface A0, an interface A1, an interface A2, an interface A3, an interface A4, an interface A5, an interface A6 and an interface A7, the AB30S solid-state relay is provided with an interface A02, an interface A04, an interface A06, an interface A08, an interface A10, an interface A12, an interface A14 and an interface A16, and the interface A02, the interface A04, the interface A06, the interface A08, the interface A10, the interface A12, the interface A14 and the interface A16 are respectively connected with the interface A0, the interface A1, the interface A2, the interface A3, the interface A4, the interface A5, the interface A6 and the interface A7 on the M876 chip U4.

The model of the double-density testing head is CON-32X2, and the double-density testing head is connected with an AB30S solid-state relay through a connector T.

When the double-density test head works, the M876 single chip microcomputer receives an instruction of an upper computer and controls the AB30S solid-state relay according to the instruction, and the M876 single chip microcomputer receives data, transmitted back by the double-density test head through the AB30S solid-state relay, and transmits the data back to the upper computer after calculation and processing.

The above description is only a preferred embodiment of the present invention, and not intended to limit the scope of the present invention, and any modifications, equivalents, improvements, etc. made within the spirit of the present invention should be included in the scope of the present invention.

Claims

1. The high-density switch card is characterized by comprising a dual-density test head, an AB30S solid-state relay and an M876 single chip microcomputer, wherein the dual-density test head is electrically connected with the AB30S solid-state relay, the AB30S solid-state relay is electrically connected with the M876 single chip microcomputer, and the M876 single chip microcomputer is connected with an upper computer through an upper computer interface;

the M876 singlechip comprises an M876 chip U3 and an M876 chip U4, and the M876 chip U3 and the M876 chip U4 are electrically connected to the AB30S solid-state relay respectively;

the dual-density test head is connected with an AB30S solid-state relay through a connector T.

2. The high-density switch card according to claim 1, wherein an interface a0, an interface a1, an interface a2, an interface A3, an interface A4, an interface A5, an interface A6, and an interface A7 are disposed on the M876 chip U3, and an interface a01, an interface a03, an interface a05, an interface a07, an interface a09, an interface a11, an interface a13, and an interface a15 are disposed on the AB30S solid-state relay, and the interface a01, an interface a03, an interface a05, an interface a07, an interface a09, an interface a11, an interface a13, and an interface a15 are respectively connected to an interface a0, an interface a1, an interface a2, an interface A3, an interface A4, an interface A5, an interface A6, and an 7 on the M876 chip U3.

3. The high-density switch card according to claim 1, wherein an interface a0, an interface a1, an interface a2, an interface A3, an interface A4, an interface A5, an interface A6, and an interface A7 are disposed on the M876 chip U4, and an interface a02, an interface a04, an interface a06, an interface a08, an interface a10, an interface a12, an interface a14, and an interface a16 are disposed on the AB30S solid-state relay, and the interface a02, an interface a04, an interface a06, an interface a08, an interface a10, an interface a12, an interface a14, and an interface a16 are respectively connected to an interface a0, an interface a1, an interface a2, an interface A3, an interface A4, an interface A5, an interface A6, and an 7 on the M876 chip U4.

4. The high density switch card of claim 1, wherein said dual density test head is model number CON-32X 2.