CN215560799U - Growth apparatus for single crystal growth of semiconductor compound - Google Patents
Growth apparatus for single crystal growth of semiconductor compound Download PDFInfo
- Publication number
- CN215560799U CN215560799U CN202122318349.8U CN202122318349U CN215560799U CN 215560799 U CN215560799 U CN 215560799U CN 202122318349 U CN202122318349 U CN 202122318349U CN 215560799 U CN215560799 U CN 215560799U
- Authority
- CN
- China
- Prior art keywords
- electrode
- growth
- molten
- voltage
- growing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model discloses a growth device for growing a semiconductor compound single crystal. The growing apparatus comprises: the growth device comprises a first electrode and a second electrode, at least a local sleeve of the first electrode is arranged in the second electrode, at least the local part of the first electrode and the local part of the second electrode are arranged in the growth device, when the first electrode and the second electrode are connected with a power supply, the first electrode and the second electrode can apply voltage to molten growth raw materials in the growth device, and the voltage can drive the molten growth raw materials to flow and/or reduce the surface energy of the molten growth raw materials. According to the growth equipment for the growth of the semiconductor compound single crystal, provided by the embodiment of the utility model, the cylindrical electrode and the cylindrical electrode are matched, so that the uniformity of applied voltage can be effectively improved, the mixing consistency of raw materials is improved, and the growth quality of the single crystal is further improved.
Description
Technical Field
The utility model relates to a device for growing a semiconductor compound single crystal by a fluxing agent method, in particular to a growing device for growing the semiconductor compound single crystal, belonging to the technical field of electronic science and technology, semiconductor materials and devices.
Background
Gallium nitride is one of the third-generation semiconductor core materials, and has the excellent characteristics of large forbidden band width, high electron mobility, high breakdown field strength, high thermal conductivity, small dielectric constant, strong radiation resistance, good chemical stability and the like. Gallium nitride has found widespread use in optical devices and high power electronic devices, such as Light Emitting Diodes (LEDs), Laser Diodes (LDs), and high power transistors. At present, the method for producing the gallium nitride single crystal substrate mainly comprises four methods, including a high-pressure liquid-phase method, a hydride gas-phase epitaxy method, an ammonothermal method and a fluxing agent method. The flux method has many advantages as a growth method under a near thermodynamic equilibrium state, and is one of the internationally recognized growth methods for obtaining the gallium nitride single crystal with low cost, high quality and large size.
The general growth process of the flux method gallium nitride single crystal is as follows: selecting proper raw materials (mainly comprising gallium metal, sodium metal, carbon additive and the like) according to the component proportion, placing a crucible filled with growth raw materials and gallium nitride seed crystals in a growth furnace, and carrying out liquid phase epitaxy on the gallium nitride seed crystals to obtain gallium nitride body single crystals with different thicknesses by controlling different growth times under the nitrogen atmosphere with certain growth temperature and certain growth pressure.
However, in the gallium nitride growth process, due to poor flowability and large surface tension of the growth raw materials (mainly gallium metal and sodium metal) of the gallium nitride melt, the substrate and the molten metal form a large wetting angle θ, so that the wettability of the molten metal is reduced, that is, the dispersion degree of the molten liquid metal on the substrate is reduced, the distribution of the molten metal liquid is not uniform, the thickness and the quality of the grown gallium nitride are not uniform, more impurities are easily incorporated, and the quality of crystal growth is reduced.
In the prior art, a mechanical structure stirring solution method is adopted to improve the dispersion degree of molten liquid metal on a substrate, but the structure of the mechanical structure for stirring is complex, impurities and bubbles are easily introduced into a stirrer, and the balance condition of growth is easily destroyed by stirring, so that disordered gallium nitride crystals are easy to grow polycrystal, the growth of gallium nitride single crystals is not facilitated, more impurities and bubbles are incorporated, the probability of generation of other defects is increased, and the growth quality of the crystals is reduced.
SUMMERY OF THE UTILITY MODEL
The main object of the present invention is to provide a growth apparatus for single crystal growth of semiconductor compounds, which overcomes the disadvantages of the prior art.
In order to achieve the purpose of the utility model, the technical scheme adopted by the utility model comprises the following steps:
an embodiment of the present invention provides a growth apparatus for single crystal growth of a semiconductor compound, including:
a growth apparatus for growing a semiconductor compound single crystal by flux-based liquid phase epitaxy and a voltage application apparatus for applying a voltage to a molten growth raw material in a liquid phase epitaxial growth system in the growth apparatus,
the voltage applying device comprises a first electrode and a second electrode, at least a part of the first electrode is sleeved in the second electrode, at least a part of the first electrode and a part of the second electrode are arranged in the growing device, when the first electrode and the second electrode are connected with a power supply, the first electrode and the second electrode can apply voltage to molten growth raw materials in the growing device, and the voltage can drive the molten growth raw materials to flow and/or reduce the surface energy of the molten growth raw materials.
Compared with the prior art, the utility model has the advantages that:
1) according to the growth equipment for the growth of the semiconductor compound single crystal, provided by the embodiment of the utility model, the voltage is adopted to drive the molten growth raw materials in the growth system to flow, so that the raw materials can be fully and uniformly mixed, and further the gallium nitride single crystal with more uniform quality can be grown;
2) the growth equipment for the growth of the semiconductor compound single crystal, provided by the embodiment of the utility model, can eliminate impurities in a molten growth raw material, so that excessive impurities are prevented from being merged into the molten growth raw material, and the growth quality of the gallium nitride crystal is further improved;
3) according to the growth equipment for the growth of the semiconductor compound single crystal, which is provided by the embodiment of the utility model, the structure that the cylindrical electrode is matched with the cylindrical electrode is adopted, so that the uniformity of applied voltage can be effectively improved, and the mixing consistency of raw materials is improved, so that the growth quality of the single crystal is further improved;
4) the growth equipment for the growth of the semiconductor compound single crystal provided by the embodiment of the utility model has a simple structure, is convenient to transform, and can be realized by adding the voltage induction unit in the existing gallium nitride single crystal epitaxial equipment.
Drawings
FIG. 1 is a schematic diagram of a growth apparatus for single crystal growth of a semiconductor compound according to an exemplary embodiment of the present invention;
FIG. 2 is a state of distribution of a molten growth raw material when no voltage is applied;
FIG. 3 is a distribution state of a molten growth raw material when a predetermined voltage is applied;
FIGS. 4 to 8 are electron micrographs of gallium nitride single crystals grown in examples 1 to 5 of the present invention, respectively;
FIGS. 9 to 10 are electron micrographs of gallium nitride single crystals grown in comparative examples 1 to 2, respectively.
Detailed Description
In view of the deficiencies in the prior art, the inventors of the present invention have made extensive studies and extensive practices to provide technical solutions of the present invention. The technical solution, its implementation and principles, etc. will be further explained as follows.
Some technical terms referred to in this specification are explained as follows:
wetting angle θ: the angle between the liquid-solid interface and the tangent to the liquid surface at the point of contact between the liquid and solid phases is less than 90 degrees indicating wetting and greater than 90 degrees indicating non-wetting.
Flux method: also known as the molten salt method, a method of artificially producing single crystals from a melt with the aid of a flux; the material is melted by the fluxing agent in the crucible when the melting point of the material is lower, so that the crystallization process can be carried out under normal pressure, which is the greatest advantage of the method. Because of the high growth temperature, this method is generally called high temperature solution growth method, and is to dissolve the original components of the crystal in a low melting point flux solution at a high temperature to form a uniform saturated solution, and then to precipitate the crystal by slowly lowering the temperature or by other means to form a supersaturated solution.
Surface energy: under the conditions of constant temperature, constant pressure and constant composition, the reversible increase of the surface area of a system requires the non-volume function of a substance, and the other definition of the surface energy is the excess energy of surface particles relative to internal particles.
An embodiment of the present invention provides a growth apparatus for single crystal growth of a semiconductor compound, including:
a growth apparatus for growing a semiconductor compound single crystal by flux-based liquid phase epitaxy and a voltage application apparatus for applying a voltage to a molten growth raw material in a liquid phase epitaxial growth system in the growth apparatus,
the voltage applying device comprises a first electrode and a second electrode, at least a part of the first electrode is sleeved in the second electrode, at least a part of the first electrode and a part of the second electrode are arranged in the growing device, when the first electrode and the second electrode are connected with a power supply, the first electrode and the second electrode can apply voltage to molten growth raw materials in the growing device, and the voltage can drive the molten growth raw materials to flow and/or reduce the surface energy of the molten growth raw materials.
In a specific embodiment, the second electrode has an open receiving cavity, and a part of the first electrode is disposed in the receiving cavity.
In a specific embodiment, the second electrode is a sheet electrode, and the second electrode has a receiving cavity formed by winding or folding along a specified direction.
In a specific embodiment, the second electrode has a ring or semi-ring structure.
In a specific embodiment, the first electrode has a first portion and a second portion sequentially arranged along a length direction thereof, wherein the second portion of the first electrode is arranged in the accommodating cavity of the second electrode.
In a specific embodiment, the first electrode and the second electrode are coaxially arranged, and the first electrode and the second electrode are not in direct contact.
In a specific embodiment, the first electrode is a cylindrical electrode, the first electrode is a solid structure, and the second electrode is a cylindrical electrode.
In a specific embodiment, the growing apparatus further includes a power supply, wherein an anode and a cathode of the power supply correspond to and are electrically connected to the first electrode and the second electrode, respectively, and the power supply is further electrically connected to a voltage adjusting mechanism, and the voltage adjusting mechanism is at least used for adjusting one or more of the magnitude, direction and frequency of the voltage provided by the power supply.
In a specific embodiment, the growing apparatus further comprises a current detection module, wherein the current detection module is connected with the molten growth raw material in the growing device and is at least used for detecting the current change in the molten growth raw material.
In a specific embodiment, the growth device comprises a growth chamber and a reaction vessel, the reaction vessel is arranged in the growth chamber, the reaction vessel is used for containing the molten growth raw material, the first electrode and the second electrode are arranged in the growth chamber, and parts of the first electrode and the second electrode are arranged in the reaction vessel.
The embodiment of the utility model provides a method for growing gallium nitride single crystals by a flux method based on voltage induction, which comprises the following steps: in the liquid phase epitaxial growth of a gallium nitride single crystal by flux method, a voltage is applied to a molten growth raw material therein to at least drive the flow of the molten growth raw material and/or to lower the surface energy of the molten growth raw material.
In one embodiment, the method comprises: and adjusting one or more of the flow speed, flow direction and flow frequency of the molten growth raw material at least by regulating one or more of the magnitude, direction and frequency of the voltage applied to the molten growth raw material.
In one embodiment, the method comprises: the voltage applied to the molten growth feedstock comprises a pulsed voltage, a sine voltage, or a cosine voltage to drive the molten growth feedstock to flow back and forth.
In one embodiment, the method comprises: and applying voltage to the molten growth raw material to keep the growth conditions of the gallium nitride single crystal in the molten growth raw material in an equilibrium state.
In one embodiment, the method comprises: and applying a voltage of-220V to the molten growth raw material.
In a specific embodiment, the mass ratio of Ga to Na in the molten growth raw material is 10:0 to 1: 10.
In a specific embodiment, the Na in the molten growth raw material is used as a metal flux, and the metal flux may be an alkali metal or alkaline earth metal flux, or may be two or more alkali metal or alkaline earth metal fluxes of a composite flux, such as a sodium (Na) metal and strontium (Sr) metal composite flux.
In one embodiment, the method comprises: the mass ratio of Ga to Na in the molten growth raw material is 1:1-1:10, particularly preferably 3:7, and correspondingly, the voltage applied to the molten growth raw material is-36V.
The embodiment of the utility model also provides a method for growing the semiconductor compound single crystal based on the voltage-induced flux method, which comprises the following steps: in the liquid phase epitaxial growth of a semiconductor compound single crystal by flux method, a voltage is applied to a molten growth raw material therein to at least drive the flow of the molten growth raw material and/or to lower the surface energy of the molten growth raw material.
Further, the semiconductor compound includes gallium nitride, aluminum nitride, and the like.
It should be noted that the gallium nitride seed crystal is a homogeneous substrate, and the homogeneous substrate may be a gallium nitride self-supporting substrate, or may be a composite substrate, that is, a gallium nitride epitaxial film grown on a heterogeneous substrate, which may be one or more of sapphire, silicon, SiC, or diamond materials, by using a growth method such as MOCVD, MBE, HVPE, or the like; it is also possible to use a foreign substrate, such as but not limited to one or more of sapphire, silicon, SiC or diamond material, in an autoclave to epitaxially grow a single piece of GaN thick film material or multiple pieces of GaN thick film material simultaneously to obtain a single piece or multiple pieces of GaN single crystal substrate.
The inventors of the present invention have studied and found that, since liquid metal gallium has high electrical conductivity, it is observed that an electric field can promote the movement of molten metal gallium on pure gallium (99.99%, melting point 29.8C), and the applied electric field can change the surface tension thereof, wherein the distribution state of the molten growth raw material when no voltage is applied is shown in fig. 2, and the distribution state of the molten growth raw material when a preset voltage is applied is shown in fig. 3.
Specifically, the inventor adds a voltage applying device in the existing liquid phase epitaxial growth system of the gallium nitride single crystal, and applies a preset voltage to the molten growth raw material in the growth system of the gallium nitride single crystal in the process of liquid phase epitaxial growth of the gallium nitride single crystal by a flux method so as to reduce the surface tension of molten metal, reduce the wetting angle theta between a substrate and the molten metal and uniformly distribute the molten growth raw material; in addition, the application of the preset voltage in the molten growth raw material can promote the movement of molten metal in the molten growth raw material, so that the fluidity of the molten growth raw material is improved, and the epitaxially grown gallium nitride single crystal in the embodiment of the utility model has uniform thickness, better uniformity and higher crystal quality.
In the method for growing the uniform gallium nitride single crystal based on the flux method induced by the voltage, the voltage applied to the molten growth raw material in the growth system of the gallium nitride single crystal is-220V and the frequency is 0.001-50Hz in the process of liquid phase epitaxial growth of the gallium nitride single crystal by the flux method, and the molten growth raw material has better fluidity by changing the magnitude, the direction and the frequency (alternating current) of the voltage; specifically, the molten growth raw material can realize reciprocating motion by applying pulse voltage, sine/cosine voltage and the like, the fluidity of the molten growth raw material is improved, the surface energy of the molten growth raw material is further reduced by applying the voltage, the uniformity of the molten growth raw material is improved, and the uniform liquid phase epitaxial growth of the gallium nitride single crystal is realized.
Specifically, in the method for growing a uniform gallium nitride single crystal based on the voltage-induced flux method, the applied voltage is changed along with the Ga-Na ratio in the molten growth raw material, wherein the Ga-Na mass ratio in the molten growth raw material is 10:0-1:10, preferably 1:1-1:10, and particularly preferably 3:7, and the applied voltage is preferably-36V.
Specifically, when a preset voltage is applied to the molten growth raw material, a current is generated in the molten growth raw material, the current meter is used for detecting the change of the current in the molten growth raw material, and the state of the gallium nitride single crystal growth process, such as parameters of crystal morphology, growth thickness and the like, can be monitored.
Specifically, the realization principle of the method for growing uniform gallium nitride single crystal based on the flux method induced by voltage provided by the embodiment of the utility model at least comprises the following steps: the consumption of the molten raw material, the conductivity thereof varying, the growth rate and the real-time yield of the gallium nitride single crystal can be easily judged according to the magnitude of the current and the rate of change of the current, for example, when a decrease in the current is detected and the rate of change of the current increases, the real-time yield of the gallium nitride single crystal increases, and vice versa, the yield decreases.
The technical solution, the implementation process and the principle thereof, etc. will be further explained with reference to the accompanying drawings and specific embodiments, and unless otherwise specified, the raw material for growing the gallium nitride single crystal, the testing method, etc. used in the embodiments of the present invention may be known to those skilled in the art.
Referring to fig. 1, a growth apparatus for growing a semiconductor compound single crystal includes a growth device for flux-based liquid phase epitaxial growth of a semiconductor compound single crystal and a voltage application device for applying a voltage to a molten state growth raw material in a liquid phase epitaxial growth system in the growth device, the voltage being capable of driving the molten state growth raw material to flow and/or reducing a surface energy of the molten state growth raw material.
Specifically, referring to fig. 1 again, the growth apparatus includes a growth chamber and a reaction vessel 10, the reaction vessel 10 is disposed in the growth chamber, the reaction vessel 10 is used for accommodating the substrate or seed crystal 50 and the molten growth raw material 60, as known to those skilled in the art, the growth chamber may be a reaction furnace, the reaction vessel 10 may be a crucible, etc., the growth chamber is used for providing a growth environment for growing a semiconductor compound single crystal by flux method liquid phase epitaxy, and the specific structure thereof may be selected according to the semiconductor compound single crystal to be grown, which may be implemented by using existing equipment known to those skilled in the art.
Specifically, the voltage applying device comprises a power source 40, and a first electrode 20 and a second electrode 30 which are electrically connected with the power source, at least a part of the first electrode 20 is sleeved in the second electrode 30, and parts of the first electrode 20 and the second electrode 30 are arranged in the reaction vessel 10 of the growth device, when the first electrode 20 and the second electrode 30 are connected with the power source 40, the first electrode 20 and the second electrode 30 can apply voltage to the molten growth raw material in the growth device.
Specifically, the second electrode 30 has an open receiving cavity 31, and a part of the first electrode 20 is disposed in the receiving cavity 31.
For example, the second electrode 30 may be a sheet-shaped electrode, the second electrode 30 has the receiving cavity 31 formed by winding or folding in a specific direction, and it is understood that the second electrode 30 may have a ring-shaped or semi-ring-shaped structure.
Specifically, the first electrode 20 has a first portion and a second portion sequentially arranged along the length direction thereof, wherein the second portion of the first electrode 20 is arranged in the accommodating cavity 31 of the second electrode 30.
In a specific embodiment, the first electrode 20 and the second electrode 30 are coaxially disposed, and there is no direct contact between the first electrode 20 and the second electrode 30, the first electrode 20 may be a cylindrical electrode, the first electrode 20 is a solid structure, and the second electrode 30 is a cylindrical electrode.
Specifically, the first electrode and the second electrode may both be made of conductive metal or the like, for example, the first electrode is a metal rod, and the second electrode is a metal cylinder.
Specifically, the power source 40 is further electrically connected to a voltage adjusting mechanism, and the voltage adjusting mechanism is at least used for adjusting one or more of the magnitude, direction and frequency of the voltage provided by the power source.
Specifically, the growing apparatus further comprises a current detection module, wherein the current detection module is connected with the molten growth raw material 60 in the growing device and is at least used for detecting the current change in the molten growth raw material.
Specifically, a method for growing a uniform gallium nitride single crystal based on a voltage-induced flux method may include:
providing a system as shown in FIG. 1;
in an anhydrous and oxygen-free environment, mixing metal gallium and metal sodium according to a mass ratio of 10:0-1:10 to form molten metal, wherein the using amount of Ga is more than 0, and then adding a carbon additive and gallium nitride seed crystals to form a growth system of gallium nitride single crystals;
and transferring the growth system of the gallium nitride single crystal to epitaxial growth equipment, applying a voltage of 220V-220V to molten metal in the growth system of the gallium nitride single crystal, and carrying out liquid phase epitaxial growth on the gallium nitride single crystal under the conditions that the pressure is 3-10MPa and the temperature is 700-1000 ℃.
Example 1
In a water-and oxygen-insulated glove box, mixing a mixture of 1:1, mixing the metal gallium and the metal sodium in a crucible, adding a carbon additive (the addition amount is 5 percent of the total amount of the metal gallium and the metal sodium), and then adding gallium nitride seed crystals to form a growth system of gallium nitride single crystals;
and transferring the growth system to epitaxial growth equipment, carrying out liquid phase epitaxial growth of the gallium nitride single crystal by a flux method under the conditions that the pressure is 3-5MPa and the temperature is 700-1000 ℃, and simultaneously applying forward and reverse voltages to the molten growth raw material, wherein the applied voltage is-220 v and the frequency is 0.001 Hz.
Example 2
In a water-and oxygen-insulated glove box, mixing 27: 73, mixing the metal gallium and the metal sodium in a crucible, adding a carbon additive (the addition amount is 0.5 percent of the total amount of the metal gallium and the metal sodium), and then adding gallium nitride seed crystals to form a growth system of gallium nitride single crystals;
and transferring the growth system to an epitaxial growth device, carrying out liquid phase epitaxial growth of the gallium nitride single crystal by a flux method under the conditions that the pressure is 3-5MPa and the temperature is 700-1000 ℃, and simultaneously applying forward and reverse voltages to the molten growth raw material, wherein the magnitude of the applied voltage is-36 v and the frequency is 1 Hz.
Example 3
In a water-and oxygen-insulated glove box, mixing a mixture of 1:10, mixing the metal gallium and the metal sodium in a crucible, adding a carbon additive (the addition amount is 0.5 percent of the total amount of the metal gallium and the metal sodium), and then adding gallium nitride seed crystals to form a growth system of gallium nitride single crystals;
and transferring the growth system to an epitaxial growth device, carrying out liquid phase epitaxial growth of the gallium nitride single crystal by a flux method under the conditions that the pressure is 3-5MPa and the temperature is 700-1000 ℃, and simultaneously applying forward and reverse voltages to the molten growth raw material, wherein the applied voltage is 18v and the frequency is 10 Hz.
Example 4
In a water-and oxygen-insulated glove box, mixing 27: 73, mixing the metal gallium and the metal sodium in a crucible, adding a carbon additive (the addition amount is 0.5 percent of the total amount of the metal gallium and the metal sodium), and then adding gallium nitride seed crystals to form a growth system of gallium nitride single crystals;
and transferring the growth system to an epitaxial growth device, carrying out liquid phase epitaxial growth of the gallium nitride single crystal by a flux method under the conditions that the pressure is 3-5MPa and the temperature is 700-1000 ℃, and simultaneously applying forward and reverse voltages to the molten growth raw material, wherein the applied voltage is 36v and the frequency is 50 Hz.
Example 5
In a water-and oxygen-insulated glove box, mixing 73: 27, mixing the metal gallium and the metal sodium in a crucible, adding a carbon additive (the addition amount is 0.5 percent of the total amount of the metal gallium and the metal sodium), and then adding gallium nitride seed crystals to form a growth system of gallium nitride single crystals;
and transferring the growth system to an epitaxial growth device, carrying out liquid phase epitaxial growth of the gallium nitride single crystal by a flux method under the conditions that the pressure is 3-5MPa and the temperature is 700-1000 ℃, and simultaneously applying forward and reverse voltages to the molten growth raw material, wherein the applied voltage is 220v and the frequency is 35 Hz.
Comparative example 1
In a water-and oxygen-insulated glove box, mixing 27: 73, mixing the metal gallium and the metal sodium in a crucible, adding a carbon additive (the addition amount is 0.5 percent of the total amount of the metal gallium and the metal sodium), and then adding gallium nitride seed crystals to form a growth system of gallium nitride single crystals;
and transferring the growth system to epitaxial growth equipment, and carrying out liquid phase epitaxial growth of the gallium nitride single crystal by the flux method under the conditions that the pressure is 3-5MPa and the temperature is 700-1000 ℃.
Comparative example 2
In a water-and oxygen-insulated glove box, mixing 27: 73, mixing the metal gallium and the metal sodium in a crucible, adding a carbon additive (the addition amount is 0.5 percent of the total amount of the metal gallium and the metal sodium), and then adding gallium nitride seed crystals to form a growth system of gallium nitride single crystals;
and transferring the growth system into epitaxial growth equipment, stirring the molten growth raw materials in the growth system, and carrying out liquid phase epitaxial growth of the gallium nitride single crystal by the flux method under the conditions that the pressure is 3-5MPa and the temperature is 700-1000 ℃.
The electron micrographs of the gallium nitride single crystals obtained by the growth of examples 1 to 5 and comparative examples 1 to 2 are shown in fig. 4 to 8 and fig. 9 to 10, respectively, and it can be seen that the gallium nitride single crystals obtained in examples 2 and 4 are the best in uniformity, morphology, quality and the like, the last example is example 1, 3 and 5, and the last comparative example is comparative example 2 and the worst comparative example 1.
According to the growth equipment for the growth of the semiconductor compound single crystal, the voltage is adopted to drive the molten growth raw material in the growth system to flow, because the molten metal is a good conductor, and the molten metal gallium can move under the driving action of the voltage, the uniformity of the molten growth raw material can be realized only by applying a certain voltage to the molten growth raw material, the fluidity of the molten growth raw material is improved, the raw material can be more fully and uniformly mixed, and further the gallium nitride single crystal with more uniform quality can be grown; and the high fluidity can remove impurities in the molten growth raw materials, so that excessive impurities are prevented from being merged into the molten growth raw materials, and the growth quality of the gallium nitride crystal is further improved.
According to the growth equipment for the growth of the semiconductor compound single crystal, provided by the embodiment of the utility model, the fluidity degree of the molten growth raw material can be controlled by regulating the magnitude, the direction and the frequency of the applied voltage, so that a growth system can be in a growth balance state for a long time, the problem of disordered crystallization in the growth process of gallium nitride is avoided, the probability of growing gallium nitride polycrystal is reduced, and the gallium nitride single crystal with higher growth quality is obtained.
The growth equipment for the monocrystalline growth of the semiconductor compound, provided by the embodiment of the utility model, has a simple structure, and is convenient to modify the existing growth equipment; the growth equipment for the growth of the semiconductor compound single crystal can control the fluidity degree of the melt by regulating and controlling the applied voltage, so that the growth condition can be in a balanced state, disordered crystallization in the growth process of gallium nitride is avoided, the probability of growing polycrystal is reduced, and the gallium nitride single crystal with higher growth quality is obtained.
According to the growth equipment for the growth of the semiconductor compound single crystal, which is provided by the embodiment of the utility model, the structure that the cylindrical electrode and the cylindrical electrode are matched is adopted, so that the uniformity of applied voltage can be effectively improved, the mixing consistency of raw materials is improved, and the growth quality of the single crystal is further improved.
It should be understood that the above-mentioned embodiments are merely illustrative of the technical concepts and features of the present invention, which are intended to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and therefore, the protection scope of the present invention is not limited thereby. All equivalent changes and modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.
Claims (10)
1. A growth apparatus for single crystal growth of a semiconductor compound, characterized by comprising:
a growth apparatus for growing a semiconductor compound single crystal by flux-based liquid phase epitaxy and a voltage application apparatus for applying a voltage to a molten growth raw material in a liquid phase epitaxial growth system in the growth apparatus,
the voltage applying device comprises a first electrode and a second electrode, at least a part of the first electrode is sleeved in the second electrode, at least a part of the first electrode and a part of the second electrode are arranged in the growing device, when the first electrode and the second electrode are connected with a power supply, the first electrode and the second electrode can apply voltage to molten growth raw materials in the growing device, and the voltage can drive the molten growth raw materials to flow and/or reduce the surface energy of the molten growth raw materials.
2. The growing apparatus of claim 1, wherein: the second electrode is provided with an open accommodating cavity, and part of the first electrode is arranged in the accommodating cavity.
3. The growing apparatus of claim 2, wherein: the second electrode is a sheet electrode, and the second electrode is provided with a containing cavity formed by winding or folding along a specified direction.
4. The growing apparatus of claim 2, wherein: the second electrode is of an annular or semi-annular structure.
5. The growing apparatus of claim 2, wherein: the first electrode is provided with a first part and a second part which are sequentially arranged along the length direction of the first electrode, wherein the second part of the first electrode is arranged in the accommodating cavity of the second electrode.
6. The growing apparatus according to claim 2 or 5, wherein: the first electrode and the second electrode are coaxially arranged, and the first electrode and the second electrode are not in direct contact.
7. The growing apparatus of claim 6, wherein: the first electrode is a cylindrical electrode, the first electrode is a solid structure, and the second electrode is a cylindrical electrode.
8. The growth device according to claim 1, further comprising a power supply, wherein the positive electrode and the negative electrode of the power supply correspond to and are electrically connected with the first electrode and the second electrode respectively, and the power supply is further electrically connected with a voltage adjusting mechanism, and the voltage adjusting mechanism is at least used for adjusting one or more of the magnitude, the direction and the frequency of the voltage provided by the power supply.
9. The growing apparatus of claim 1, further comprising a current sensing module coupled to the molten growth feedstock within the growing device and configured to sense at least a change in current in the molten growth feedstock.
10. The growing apparatus of claim 1, wherein: growth device is including growing cavity and reaction vessel, reaction vessel sets up in the growing cavity, reaction vessel is used for the holding molten state growth raw materials, first electrode and second electrode set up in the growing cavity, just the local setting of first electrode and second electrode is in the reaction vessel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122318349.8U CN215560799U (en) | 2021-09-24 | 2021-09-24 | Growth apparatus for single crystal growth of semiconductor compound |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122318349.8U CN215560799U (en) | 2021-09-24 | 2021-09-24 | Growth apparatus for single crystal growth of semiconductor compound |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN215560799U true CN215560799U (en) | 2022-01-18 |
Family
ID=79851985
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202122318349.8U Active CN215560799U (en) | 2021-09-24 | 2021-09-24 | Growth apparatus for single crystal growth of semiconductor compound |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN215560799U (en) |
-
2021
- 2021-09-24 CN CN202122318349.8U patent/CN215560799U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101583745B (en) | Process for production of GaN crystals, GaN crystals, GaN crystal substrate, semiconductor devices, and apparatus for production of GaN crystals | |
| KR101310546B1 (en) | Manufacturing method for silicon carbide monocrystals | |
| US7449065B1 (en) | Method for the growth of large low-defect single crystals | |
| US9856582B2 (en) | SiC single crystal and production method thereof | |
| JP5729182B2 (en) | Method for producing n-type group III nitride single crystal, n-type group III nitride single crystal and crystal substrate | |
| CN109722712B (en) | Method for uniformly doping SiC single crystal metal impurities | |
| WO2019109636A1 (en) | Monocrystalline germanium wafers, method for preparing the same, method for preparing ingots and use of monocrystalline wafers | |
| JP3924604B2 (en) | Gallium arsenide single crystal | |
| CN215560799U (en) | Growth apparatus for single crystal growth of semiconductor compound | |
| US8501141B2 (en) | Method for producing group III nitride semiconductor | |
| CN105239161A (en) | Preparing method for ruby crystals | |
| JP3541789B2 (en) | Method for growing single crystal SiC | |
| CN115726023A (en) | Method, system and detection method for growing gallium nitride single crystal by flux method | |
| Pimputkar | Gallium nitride | |
| US5047112A (en) | Method for preparing homogeneous single crystal ternary III-V alloys | |
| Wang et al. | Growth and conductive type control of ZnSe single crystals by vertical Bridgman method | |
| WO2013109854A1 (en) | Crystal growth using non-thermal atmospheric pressure plasmas | |
| US20190284717A1 (en) | ScAlMgO4 SINGLE CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING THE SAME | |
| CN216378479U (en) | Semiconductor crystal growth apparatus for promoting constancy and fluidity of raw material components | |
| CN104884683A (en) | Method for producing SiC single crystal | |
| Slomski et al. | Growth technology for GaN and AlN bulk substrates and templates | |
| Pan et al. | Promotion of GaN crystal growth with pre-stirring using the Na-flux method | |
| JP2008063204A (en) | Growing method of zinc oxide crystal | |
| Imade et al. | Control of the Growth Habit in the Na Flux Growth of GaN Single Crystals | |
| JP2015127298A (en) | Gallium nitride crystal, crystal substrate, and nitride crystal |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |