CN215551483U

CN215551483U - Long-service-life monocrystalline silicon wafer for precision electronic engineering

Info

Publication number: CN215551483U
Application number: CN202120790282.5U
Authority: CN
Inventors: 杜国佳
Original assignee: Shanghai Bailian Intelligent Technology Co ltd
Current assignee: Shanghai Bailian Intelligent Technology Co ltd
Priority date: 2021-04-19
Filing date: 2021-04-19
Publication date: 2022-01-18
Anticipated expiration: 2031-04-19

Abstract

The utility model discloses a long-service-life monocrystalline silicon piece for precision electronic engineering, which comprises a monocrystalline silicon piece body, wherein the monocrystalline silicon piece body comprises a basal layer, a second protective layer is arranged on the outer side of the basal layer, the second protective layer comprises a nano-silver coating and a chlorosulfonated polyethylene coating, a first protective layer is arranged on the outer side of the second protective layer, and the first protective layer comprises a glass fiber layer and an aluminum foil layer. The silicon wafer is provided with the first protective layer comprising the glass fiber layer and the aluminum foil layer, wherein the glass fiber layer can effectively improve the high temperature resistance of the whole silicon wafer, the aluminum foil layer can improve the shielding property of the whole silicon wafer, the second protective layer comprising the nano silver coating and the chlorosulfonated polyethylene coating is arranged, the nano silver coating can improve the radiation resistance of the whole silicon wafer, the chlorosulfonated polyethylene coating can improve the corrosion resistance of the whole silicon wafer, and the service life of the whole silicon wafer is effectively prolonged through the matching of the structures.

Description

Long-service-life monocrystalline silicon wafer for precision electronic engineering

Technical Field

The utility model relates to the technical field of monocrystalline silicon wafers, in particular to a monocrystalline silicon wafer with long service life for precision electronic engineering.

Background

The monocrystalline silicon wafer is a monocrystalline silicon, is a crystal with a basically complete lattice structure, has different properties in different directions, is a good semiconductor material, has the purity requirement of 99.9999 percent, even more than 99.9999999 percent, is used for manufacturing semiconductor devices, solar cells and the like, but the existing monocrystalline silicon wafer has poor performances such as corrosion resistance, high temperature resistance and the like, so that the service life of the monocrystalline silicon wafer is shortened, and therefore, the monocrystalline silicon wafer with the long service life for precision electronic engineering is provided.

SUMMERY OF THE UTILITY MODEL

The utility model aims to provide a long-service-life monocrystalline silicon wafer for precision electronic engineering, which has the advantage of long service life and solves the problem that the service life of the conventional monocrystalline silicon wafer is shortened due to poor corrosion resistance, high temperature resistance and other properties.

In order to achieve the purpose, the utility model provides the following technical scheme: the utility model provides a long service life's monocrystalline silicon piece for precision electronic engineering, includes the monocrystalline silicon piece body, the monocrystalline silicon piece body includes the stratum basale, and the outside of stratum basale is provided with the second inoxidizing coating, and simultaneously, the second inoxidizing coating includes nanometer silver coating and chlorosulfonated polyethylene coating, the outside of second inoxidizing coating is provided with first inoxidizing coating, and first inoxidizing coating includes glass fiber layer and aluminium foil layer.

Preferably, the chlorosulfonated polyethylene coating is coated on the outer side of the base layer, and the nano silver coating is coated on the outer side of the chlorosulfonated polyethylene coating.

Preferably, the thickness of the nano silver coating is the same as that of the chlorosulfonated polyethylene coating, and the thickness of the nano silver coating is one hundred to two hundred micrometers.

Preferably, the aluminum foil layer is connected to the outer side of the nano silver coating layer through PP glue, and the glass fiber layer is connected to the outer side of the aluminum foil layer through PP glue.

Preferably, the thickness of the glass fiber layer is the same as that of the aluminum foil layer, and the thickness of the glass fiber layer is one hundred eighty to three hundred fifty micrometers.

Compared with the prior art, the utility model has the following beneficial effects:

the silicon wafer is provided with the first protective layer comprising the glass fiber layer and the aluminum foil layer, wherein the glass fiber layer can effectively improve the high temperature resistance of the whole silicon wafer, the aluminum foil layer can improve the shielding property of the whole silicon wafer, the second protective layer comprising the nano silver coating and the chlorosulfonated polyethylene coating is arranged, the nano silver coating can improve the radiation resistance of the whole silicon wafer, the chlorosulfonated polyethylene coating can improve the corrosion resistance of the whole silicon wafer, and the service life of the whole silicon wafer is effectively prolonged through the matching of the structures.

Drawings

The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application, and in which:

FIG. 1 is a schematic structural view of the present invention;

FIG. 2 is a structural diagram of a second protective layer according to the present invention;

FIG. 3 is a schematic view of a first protective layer structure according to the present invention.

In the figure: 1 monocrystalline silicon piece body, 11 basal layers, 12 second protective layers, 121 nano silver coatings, 122 chlorosulfonated polyethylene coatings, 13 first protective layers, 131 glass fiber layers and 132 aluminum foil layers.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

In the description of the application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "disposed," "connected," and the like are to be construed broadly, such as "connected," which may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.

The monocrystalline silicon wafer body 1, the substrate layer 11, the second protective layer 12, the nano-silver coating 121, the chlorosulfonated polyethylene coating 122, the first protective layer 13, the glass fiber layer 131 and the aluminum foil layer 132 of the present application are all common standard components or components known to those skilled in the art, and the structure and principle thereof can be known to those skilled in the art through technical manuals or through conventional experimental methods.

Referring to fig. 1 to 3, a long-life monocrystalline silicon wafer for precision electronic engineering includes a monocrystalline silicon wafer body 1, the monocrystalline silicon wafer body 1 includes a substrate layer 11, and a second protective layer 12 is disposed on an outer side of the substrate layer 11, meanwhile, the second protective layer 12 includes a nano silver coating 121 and a chlorosulfonated polyethylene coating 122, the nano silver coating 121 can improve radiation protection of the entire silicon wafer, the chlorosulfonated polyethylene coating 122 can improve corrosion resistance of the entire silicon wafer, the chlorosulfonated polyethylene coating 122 is disposed on an outer side of the substrate layer 11, the nano silver coating 121 is disposed on an outer side of the chlorosulfonated polyethylene coating 122, thicknesses of the nano silver coating 121 and the chlorosulfonated polyethylene coating 122 are the same, and the thickness of the nano silver coating 121 is one hundred to two hundred micrometers, the first protective layer 13 is disposed on an outer side of the second protective layer 12, and the first protective layer 13 includes a glass fiber layer 131 and an aluminum foil layer 132, the glass fiber layer 131 can effectively improve the whole high temperature resistance of this silicon chip, and the aluminium foil layer 132 can improve the whole shielding nature of this silicon chip, and aluminium foil layer 132 passes through PP glue to be connected in the outside of nanometer silver coating 121, and glass fiber layer 131 passes through PP glue to be connected in aluminium foil layer 132's outside, and glass fiber layer 131 is the same with aluminium foil layer 132's thickness, and glass fiber layer 131's thickness is one hundred eighty to three hundred fifty microns.

During the use, set up the first inoxidizing coating 13 including glass fiber layer 131 and aluminium foil layer 132, glass fiber layer 131 wherein can effectively improve the holistic high temperature resistance of this silicon chip, aluminium foil layer 132 can improve the holistic shielding property of this silicon chip, set up including nano silver coating 121 and chlorosulfonated polyethylene coating 122 second inoxidizing coating 12, nano silver coating 121 wherein can improve the holistic radiopacity of this silicon chip, chlorosulfonated polyethylene coating 122 can improve the holistic corrosion resistance of this silicon chip, through the cooperation of above structure, the holistic life of this silicon chip has effectively been improved.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the utility model, the scope of which is defined in the appended claims and their equivalents.

Claims

1. A long-service-life monocrystalline silicon piece for precision electronic engineering comprises a monocrystalline silicon piece body (1) and is characterized in that: the monocrystalline silicon piece body (1) comprises a substrate layer (11), a second protective layer (12) is arranged on the outer side of the substrate layer (11), meanwhile, the second protective layer (12) comprises a nano silver coating (121) and a chlorosulfonated polyethylene coating (122), a first protective layer (13) is arranged on the outer side of the second protective layer (12), and the first protective layer (13) comprises a glass fiber layer (131) and an aluminum foil layer (132).

2. The long-life monocrystalline silicon wafer for precision electronics engineering according to claim 1, characterized in that: the chlorosulfonated polyethylene coating (122) is coated on the outer side of the base layer (11), and the nano silver coating (121) is coated on the outer side of the chlorosulfonated polyethylene coating (122).

3. The long-life monocrystalline silicon wafer for precision electronics engineering according to claim 1, characterized in that: the thickness of the nano silver coating (121) is the same as that of the chlorosulfonated polyethylene coating (122), and the thickness of the nano silver coating (121) is one hundred to two hundred micrometers.

4. The long-life monocrystalline silicon wafer for precision electronics engineering according to claim 1, characterized in that: the aluminum foil layer (132) is connected to the outer side of the nano silver coating layer (121) through PP glue, and the glass fiber layer (131) is connected to the outer side of the aluminum foil layer (132) through PP glue.

5. The long-life monocrystalline silicon wafer for precision electronics engineering according to claim 1, characterized in that: the glass fiber layer (131) and the aluminum foil layer (132) are the same in thickness, and the glass fiber layer (131) is one hundred eighty to three hundred fifty microns in thickness.