CN215517728U - Temperature conduction device for single crystal furnace - Google Patents

Abstract

The utility model relates to the technical field of crystal production, in particular to a temperature conduction device for a single crystal furnace, which comprises a first shell and a second shell, the inner wall of the first shell is provided with an internal thread, the second shell is provided with an external thread, the first shell is provided with a first mounting groove, a second mounting groove is arranged on the second shell, rubber blocks are arranged in the first mounting groove and the second mounting groove, a plurality of copper-nickel alloy wires are arranged in the rubber block in a penetrating way and are uniformly distributed, insulating layers are sleeved on the plurality of copper-nickel alloy wires, the rubber block is directly poured on the copper-nickel alloy conductor and is used for solving the problems that the existing temperature conduction device is not suitable for the production process of the crystal, is easily influenced by high pressure in the single crystal furnace, and causes the problems that the measured temperature is greatly different from the actual temperature or the use amount of nitrogen is increased.

Description

Temperature conduction device for single crystal furnace

Technical Field

The utility model relates to the technical field of crystal production, in particular to a temperature conduction device for a single crystal furnace.

Background

The currently produced indium phosphide single crystal is mainly a liquid seal Czochralski method and a vertical temperature gradient solidification method, because the melting point of indium phosphide is 1062 ℃, the pressure drop near the melting point is 2.75Mpa, the synthesis of indium phosphide and the single crystal growth must be carried out at high temperature and high pressure, the indium phosphide single crystal is grown by the vertical temperature gradient solidification method and is grown in a specific high-pressure container, the temperature data of the crystal growth in the high-pressure container needs to be output by a temperature conduction device on a flange cover of a single crystal furnace, the temperature conduction device needs to meet the requirements of no gas leakage under high pressure, no influence on the transmission of internal lead temperature signals, and good sealing performance.

The existing temperature conduction device penetrates a platinum rhodium wire into an insulating transparent rubber sleeve, then an approximately elliptical fluororubber block is poured at a proper position of the platinum rhodium wire with a wire sleeve, the outside is a stainless steel joint shell with internal and external threads, the middle of the joint is hollow, the center is provided with an elliptical space matched with the rubber block, two ends are round holes with smaller diameters and communicated with the outside, one end of the platinum rhodium wire penetrates the round holes, the fluororubber block is placed into the inner elliptical space, the other end of the fluororubber block penetrates through a through hole of the other stainless steel shell, the inner elliptical rubber block is locked by the internal and external threads of the two stainless steel shells, and the effects of sealing and temperature data transmission are achieved.

Because the temperature transmission lines on the temperature conduction device are platinum wires and platinum-rhodium wires, the hardness of the platinum wires and the platinum-rhodium wires is lower, the platinum wires can deform under larger extrusion, and in the actual crystal production process, the stainless steel shell thread lock is too dead, so that the plastic deformation of the platinum wires is exceeded, the diameter of the platinum wires is reduced, the transmission of electric signals is influenced, and the measured temperature is greatly different from the actual temperature; if the threads are slightly loosened, small gaps exist in the platinum rhodium wire and the insulating transparent rubber sleeve due to high internal pressure, internal nitrogen gas leaks from gaps between the platinum rhodium wire and the rubber sleeve under high pressure, so that the air pressure is unstable, and the fluctuation of the growth temperature is further influenced. After the nitrogen leaks, the nitrogen with the same quantity needs to be filled into the furnace, so that the phenomenon that the single crystal furnace cracks due to too low air pressure is avoided, and the using quantity of the nitrogen is increased.

SUMMERY OF THE UTILITY MODEL

In view of the above, the present invention provides a temperature conduction device for a single crystal furnace, which is used to solve the problem that the measured temperature is greatly different from the actual temperature or the amount of nitrogen used is increased due to the high pressure in the single crystal furnace during the crystal production process of the conventional temperature conduction device.

The utility model solves the technical problems by the following technical means:

the temperature conduction device for the single crystal furnace comprises a first shell and a second shell, wherein an internal thread is formed in the inner wall of the first shell, an external thread is formed in the second shell, a first mounting groove is formed in the first shell, a second mounting groove is formed in the second shell, rubber blocks are mounted in the first mounting groove and the second mounting groove, a plurality of copper-nickel alloy wires are arranged in the rubber blocks in a penetrating mode and are uniformly distributed, insulating layers are sleeved on the plurality of copper-nickel alloy wires, and the rubber blocks are directly poured on the copper-nickel alloy wires.

Furthermore, the insulating layer has been seted up in the rubber block department of pouring and has been pour the groove, it meets with the copper-nickel alloy wire to pour the groove, sets up like this, makes the rubber block direct forming on the wire, avoids the high pressure in the single crystal growing furnace to influence the insulating layer to lead to appearing the gap between insulating layer and the wire.

Further, the insulating layer is a polyvinyl chloride insulating layer, so that polyvinyl chloride has high heat resistance, and the polyvinyl chloride insulating layer is prevented from deforming due to the temperature in the single crystal furnace.

Further, the diameter of the rubber block is larger than the diameters of the first mounting groove and the second mounting groove, so that the first shell and the second shell can be always in a locking state, the rubber block is further locked, and gaps between the rubber block and the wires are avoided.

Further, the rubber block is a fluororubber block, so that the fluororubber block has good heat resistance, oxidation resistance, oil resistance, corrosion resistance and atmospheric aging resistance, and is convenient to use for a long time.

According to the temperature conduction device for the single crystal furnace, the platinum-rhodium wire is replaced by the special copper-nickel alloy wire, so that the hardness of the wire in the temperature conduction device is increased, and the problem that the platinum-rhodium wire is deformed under the condition that the first shell and the second shell are locked to influence the accuracy of temperature transmission is solved; the rubber block is directly poured on the lead, so that the combination mode of the insulating rubber sleeve and the compensation wire is changed, and the possibility of air leakage between the fluororubber block and the compensation lead is avoided.

Drawings

FIG. 1 is a schematic sectional view A-A showing the structure of a temperature conduction apparatus for a single crystal furnace according to the present invention;

FIG. 2 is a plan view of a temperature conduction device for a single crystal furnace according to the present invention;

the rubber block comprises a first shell 1, a first mounting groove 11, a rubber block 2, a copper-nickel alloy wire 3, a second shell 4, a second mounting groove 41 and an insulating layer 5.

Detailed Description

The utility model will be described in detail below with reference to the following figures and specific examples:

as shown in fig. 1-2, the temperature conduction device for the single crystal furnace of the present invention comprises a first shell 1 and a second shell 4, wherein an inner wall 1 of the first shell is provided with an internal thread, and an outer thread is provided on the second shell 4, and the first shell 1 and the second shell 4 can be locked by screwing the internal thread and the outer thread. The first housing 1 is provided with a first mounting groove 11, the second housing 4 is provided with a second mounting groove 41, and when the first housing 1 and the second housing 4 are locked, the first mounting groove 11 and the second mounting groove 41 form an integral space. Install the block rubber 2 in first mounting groove 11 and the second mounting groove 41, through installing block rubber 2 in first mounting groove 11 and second mounting groove 41, when making first shell 1 and second shell 4 lock, can lock block rubber 2, avoid there being the possibility of gas leakage here. Wear to be equipped with many copper nickel alloy wire 3 in the block rubber 2, 3 evenly distributed of a plurality of copper nickel alloy wire, all the cover is equipped with insulating layer 5 on a plurality of copper nickel alloy wire 3, block rubber 2 directly pours on copper nickel alloy wire 3, make block rubber 2 direct and the contact of copper nickel alloy wire 3, and integrated into one piece, avoid the possibility of gas leakage between block rubber 2 and the copper nickel alloy wire 3, and adopt copper nickel alloy replacement platinum rhodium silk, the hardness of wire in the temperature conduction device has been increased, avoided platinum rhodium silk under the condition of first shell 1 and the locking of second shell 4, lead to warping, the problem of temperature transmission's accuracy has been influenced.

The insulating layer 5 has been seted up in the rubber block 2 department of pouring and has been pour the groove, pours the groove and meets with copper-nickel alloy wire 3 mutually, through rubber block 2 direct forming on the wire, avoids the high pressure in the single crystal growing furnace to influence insulating layer 5 to lead to appearing the gap between insulating layer 5 and the wire. The insulating layer 5 is a polyvinyl chloride insulating layer, and the polyvinyl chloride insulating layer is prevented from deforming due to the fact that the polyvinyl chloride has high heat resistance.

The diameter of rubber block 2 is greater than the diameter of first mounting groove 11 and second mounting groove 41, when first shell 1 and second shell 4 lock, can further lock rubber block 2, avoids appearing the gap between rubber block 2 and the wire. The rubber block 2 is a fluororubber block which has good heat resistance, oxidation resistance, oil resistance, corrosion resistance and atmospheric aging resistance, so that the fluororubber block is convenient to use for a long time.

The using method of the utility model is as follows: before use, the insulating layer 5 on the copper-nickel alloy wire 3 is stripped to expose the copper-nickel alloy wire 3, then fluororubber is poured at the stripping position of the insulating layer 5 in a pouring mode to integrally form the fluororubber and the copper-nickel alloy wire 3, and meanwhile, the fluororubber forms the rubber block 2; placing the rubber block 2 and one end of the wire in the second shell 4, so that one end of the wire extends out of the second shell 4, and the rubber block 2 is positioned in the second mounting groove 41, then aligning the first mounting groove 11 of the first shell 1 with the second mounting groove 41, and enabling the internal thread and the external thread to be in threaded connection, and locking the first shell 1 and the second shell 4, wherein before locking, the other end of the wire extends out of the first shell 1, so that the whole temperature conduction device is installed; when in use, the whole temperature conduction device is arranged on the flange cover of the single crystal furnace and is connected with other instruments.

Although the present invention has been described in detail with reference to the preferred embodiments, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted without departing from the spirit and scope of the utility model as defined in the appended claims. The techniques, shapes, and configurations not described in detail in the present invention are all known techniques.

Claims (5)

1. A temperature conduction device for a single crystal furnace comprises a first shell and a second shell, wherein an inner thread is formed on the inner wall of the first shell, an outer thread is formed on the second shell, a first mounting groove is formed on the first shell, a second mounting groove is formed on the second shell, and the temperature conduction device is characterized in that: install the block rubber in first mounting groove and the second mounting groove, wear to be equipped with many copper-nickel alloy wires in the block rubber, it is a plurality of copper-nickel alloy wire evenly distributed is a plurality of all the cover is equipped with the insulating layer on the copper-nickel alloy wire, the block rubber is directly pour on the copper-nickel alloy wire.

2. The temperature conduction device for a single crystal furnace according to claim 1, wherein: the insulating layer is provided with a pouring groove at the pouring position of the rubber block, and the pouring groove is connected with the conducting wire.

3. The temperature conduction device for a single crystal furnace according to claim 2, wherein: the insulating layer is a polyvinyl chloride insulating layer.

4. The temperature conduction device for a single crystal furnace according to claim 3, wherein: the diameter of the rubber block is larger than the diameters of the first mounting groove and the second mounting groove.

5. The temperature conduction device for a single crystal furnace according to claim 4, wherein: the rubber block is a fluororubber block.

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