CN215496622U - Plasma cleaning device - Google Patents

Abstract

The utility model relates to a plasma cleaning device, which comprises a cavity, a radio-frequency electrode, a carrying platform, an electrode, a gas dispersion ring and a separation ring. The gas dispersion ring is connected with the cavity through the locking piece, the separating ring is lower than the gas dispersion ring, a separating space is surrounded by the separating ring and the cavity, and the locking piece is located in the separating space. The separating ring and the carrier define a reaction space, and the locking member is limited outside the reaction space. During the cleaning process of the plasma cleaning device, the argon ions impact the aluminum substrate on the carrying platform, and the separating ring can shield the locking piece to prevent part of sputtered aluminum from being adsorbed on the locking piece.

Description

Plasma cleaning device

Technical Field

The present invention relates to a plasma cleaning device, and more particularly, to a plasma cleaning device that shields a locking member through a separating ring to reduce the adhesion of contaminants to the locking member.

Background

In the plasma cleaning process of semiconductor, the plasma cleaning device generates plasma, the gas dispersing ring provides argon gas, and the argon gas is dissociated and then impacts the wafer to impact the dirt on the surface of the wafer, so as to achieve the effect of cleaning the wafer. However, some contaminants are suspended in the chamber and may fall back onto the wafer surface and follow the wafer for subsequent processing, such as metal plating. If the contamination drops in the future wiring area of the wafer, the conducting wire can not be conducted, and the yield of the product is further reduced.

A method for improving the problems is to replace the wafer with an aluminum substrate in a fixed period and make the sputtered aluminum react with the dirt remained in the cavity and adhere to a shielding plate of the cavity so as to reduce the probability of the dirt falling back to the surface of the wafer.

However, the gas distribution ring is usually secured to the chamber by a locking member (e.g., a screw), and the screw grounded through the chamber is prone to absorb metal ions (aluminum ions), so that the contaminants are attached to the surface of the screw, and the contaminants may fall off and fall onto the wafer. Since the screw is generally made of stainless steel, it cannot be effectively surface-treated, so that it is difficult to solve the problem of the generation of the stain.

SUMMERY OF THE UTILITY MODEL

Therefore, in order to overcome the disadvantages of the prior art, embodiments of the present invention provide a plasma cleaning apparatus, which can reduce the probability of dirt adhering to the locking members (e.g., screws) and prevent the dirt from peeling off and falling onto the surface of the wafer, thereby increasing the cleanliness of the wafer.

In accordance with at least one of the above objectives, a plasma cleaning apparatus includes a chamber, an RF electrode, a carrier, an electrode, a gas distribution ring, and a separating ring. The cavity is provided with an accommodating space and a cavity top, and the radio-frequency electrode is connected with the cavity top. The carrying platform is positioned in the accommodating space and used for bearing at least one substrate, and the electrode is connected with the carrying platform. The gas dispersion ring is connected with the cavity through at least one locking piece, wherein the gas dispersion ring is provided with a plurality of air holes for process gas to pass through the accommodating space. The separating ring is connected with the gas dispersing ring, wherein the separating ring and the carrier define a reaction space, the separating ring is positioned between the locking piece and the reaction space so as to limit the locking piece outside the reaction space, and the gas holes of the gas dispersing ring are positioned in the reaction space.

In accordance with at least one of the above objectives, a plasma cleaning apparatus includes a chamber, an RF electrode, a carrier, an electrode, a gas distribution ring, and a separating ring. The cavity is provided with an accommodating space and a cavity top, and the radio-frequency electrode is connected with the cavity top. The gas dispersion ring is connected with the cavity through at least one locking piece, wherein the gas dispersion ring is provided with a plurality of air holes for process gas to pass through the accommodating space. The separating ring is lower than the gas dispersing ring, wherein the separating ring and the cavity surround a separating space, the locking piece is positioned in the separating space, and the gas hole of the gas dispersing ring is limited outside the separating space.

In view of at least one of the above objects, an embodiment of the present invention provides a plasma cleaning apparatus, in which a connecting portion of a separating ring is vertical to a side surface, the side surface is vertical to a bottom portion, a reaction space is defined by a vertical extension line of the side surface and a horizontal extension line of a carrier, and the separating ring is located between a locking member and the reaction space.

In view of at least one of the above objects, the present invention provides a plasma cleaning apparatus, wherein the horizontal extension line of the bottom of the separating ring and the cavity surround the separating space, and the locking member is located in the separating space.

Optionally, the separating ring further comprises a connecting portion, a side surface and a bottom portion, wherein the connecting portion connects the gas distribution ring, the side surface connects the connecting portion, the bottom portion connects the side surface, and the connecting portion and the bottom portion are opposite to each other. The side surface of the separating ring is used for preventing dirt falling from the locking fastener from falling to the surface of the substrate, and the bottom of the separating ring is used for containing the dirt.

Optionally, the bottom of the spacer ring has a first distance from one end to the sidewall of the cavity and the fastener has a second distance from the sidewall of the cavity, wherein the first distance is less than the second distance.

Optionally, the surface of the gas distribution ring further comprises a plurality of protrusions adjacent to the reaction space for attaching the chamber to the contamination.

Optionally, the surface of the gas distribution ring is subjected to roughening treatment and non-conductive treatment, so that the surface forms a non-flat surface to attach dirt of the cavity.

Optionally, the roughening treatment is a chemical roughening treatment, a mechanical roughening treatment or an organic solvent roughening treatment. The non-conductive treatment is an anodic treatment.

Optionally, the surface roughness of the surface of the gas dispersion ring is 8-12 microns.

Optionally, the plasma cleaning apparatus further includes a vacuum pumping system connected to the accommodating space of the cavity for pumping the fluid in the accommodating space.

Optionally, the plasma cleaning device further comprises a first shielding plate located in the accommodating space and adjacent to the top of the cavity, and the first shielding plate has a plurality of first openings to form a non-flat bottom surface.

In short, the plasma cleaning apparatus according to the embodiment of the utility model shields the locking member between the gas distribution ring and the chamber through the separating ring to reduce the probability of the contamination adhering to the locking member, and the separating ring can also contain the contamination falling from the locking member, so that the cleanliness of the wafer can be increased, which is advantageous in the market (for example, semiconductor) where the plasma cleaning apparatus and the process are required.

Drawings

FIG. 1 is a schematic view of a plasma cleaning apparatus according to an embodiment of the present invention.

FIG. 2 is a partial schematic view of a plasma cleaning apparatus according to an embodiment of the present invention.

FIG. 3 is a partial schematic view of a plasma cleaning apparatus according to another embodiment of the present invention.

FIG. 4 is a partial schematic view of a plasma cleaning apparatus according to another embodiment of the present invention.

FIG. 5 is a partial schematic view of a plasma cleaning apparatus according to yet another embodiment of the present invention.

FIG. 6 is a partial schematic view of a plasma cleaning apparatus according to yet another embodiment of the present invention.

FIG. 7 is a bottom partial schematic view of a gas distribution ring according to yet another embodiment of the utility model.

Description of reference numerals: 1-a plasma cleaning device; 11-a cavity; 111-the top of the cavity; 113-vacuum pumping system; 13-a stage; 131-a cooling line; 15-gas dispersion ring; 151-locking piece; 153-a convex part; 155-air holes; 17. 27, 37-spacer ring; 171. 271, 371-connecting part; 173. 273, 373-side; 175. 275, 375-bottom; 177-spacer ring locking member; 19-a first shutter; 191 — a first opening; 193-a first closure; 195-a groove; d 1-first distance; d 2-second distance; e1-radiofrequency electrodes; e2-electrode; l1-vertical extension; l2, L3-horizontal extension line; s-an accommodating space; s1-reaction space; s2-separating the spaces; w-substrate.

Detailed Description

For a fuller understanding of the objects, features and advantages of the present invention, reference should be made to the following detailed description taken in conjunction with the accompanying drawings.

First, referring to fig. 1 and fig. 2, fig. 1 is a schematic view of a plasma cleaning apparatus according to an embodiment of the present invention, and fig. 2 is a partial schematic view of the plasma cleaning apparatus according to the embodiment of the present invention. The plasma cleaning apparatus 1 of the present invention comprises a chamber 11, an RF electrode E1, a carrier 13, an electrode E2, a gas distribution ring 15, a separating ring 17 and a first shielding plate 19. The cavity 11 has a cavity top 111 and a receiving space S, and the material of the cavity top 111 is, for example, but not limited to, ceramic.

A carrier 13 is disposed in the accommodating space S of the cavity 11, and the carrier 13 is used for carrying at least one substrate W. The plasma cleaning apparatus 1 may further include a cooling line 131, and the cooling line 131 is connected to the stage 13 (e.g., disposed inside the stage 13) to adjust the temperature of the substrate W.

In a pre-clean process of a semiconductor, the substrate W is a wafer. Contaminants on the wafer may be bombarded by the plasma during the pre-cleaning process, and contaminants and by-products (e.g., alumina, silicon dioxide, silicon nitride, carbon, organic compounds, contaminant gases, etc.) may be attached to or suspended in the chamber 11. When the plasma cleaning apparatus 1 is cleaned, a metal substrate (e.g., an aluminum substrate) is used as the substrate W, and aluminum can be sputtered by the plasma and react with or adhere to the contamination and by-products on the sputtered aluminum.

Specifically, the stage 13 is connected to the electrode E2, and the electrode E2 is located above the stage 13, so that the stage 13 carries the substrate W through the electrode E2. The chamber top 111 is connected to the rf electrode E1, and the rf electrode E1 and the rf electrode E2 generate a potential difference in the receiving space S of the chamber 11.

The gas distribution ring 15 is connected to the chamber 11, so that the process gas (e.g., argon) enters the receiving space S of the chamber 11 through the plurality of gas holes 155 of the gas distribution ring 15.

When the plasma cleaning apparatus 1 is cleaned, the RF electrode E1 and the electrode E2 generate a potential difference in the chamber 11, and the electrons are energized. When the electrons impact the argon gas introduced into the chamber 11, the argon gas is dissociated into argon ions, so as to generate high-density plasma in the chamber 11. After the plasma in the chamber 11 is accelerated, the argon ions strike the aluminum substrate and sputter aluminum, so as to react with the contamination and byproducts or attach the contamination and byproducts to the sputtered aluminum, and can be captured by the first shielding plate 19.

The first shielding plate 19 is located in the accommodating space S and adjacent to the top 111 of the chamber, the first shielding plate 19 has a plurality of first openings 191 to form an uneven bottom surface, and the dirt attached to the aluminum can be caught by the uneven bottom surface of the first shielding plate 19 to reduce the probability of being suspended in the accommodating space S of the chamber 11. Specifically, the first cover 19 has a plurality of first openings 191 and a plurality of first closing portions 193, and the first closing portions 193 are adjacent to the top 111 of the chamber and opposite to the first openings 191, so as to form a plurality of grooves 195 in the first cover 19. The first opening 151 of the groove 195 faces in the direction of the substrate W to accommodate sputtered and contaminated aluminum.

Since the first shutter 19 has a non-flat bottom surface having a larger surface area than that of the flat bottom surface, i.e., a larger surface area for adsorbing contaminants, the frequency of replacing the first shutter 19 can be reduced, and thus, the cleaning cycle of the plasma cleaning apparatus 1 can be extended. The material of the first shutter 15 may be quartz, ceramic, silicon carbide or alumina, but the utility model is not limited thereto.

The non-flat bottom surface or notch 195 of first shutter 19 may be coated with a chemical material, wherein the chemical material may be yttria, alumina, or ceramic. The purpose of applying the chemical material to the non-flat bottom surface or indentation 195 is to create an uneven surface (e.g., a concave-convex surface) to increase the surface area of the non-flat bottom surface or indentation 195 so that aluminum carrying contaminants can be more easily caught or caught.

The gas distribution ring 15 is connected to the chamber 11 through at least one locking member 151, and the locking member 151 is, for example, but not limited to, a screw. In one embodiment, the gas distribution ring 15 is secured to the chamber top 111 by fasteners 151. In other embodiments, the gas distribution ring 15 is secured to the sidewall of the chamber 11 by fasteners 151.

The separating ring 17 is connected to the gas distribution ring 15, and the separating ring 17 is locked to the chamber 11 by the separating ring locking member 177. Specifically, the divider ring 17 is an annular ring body and is lower than the gas distribution ring 15. The reaction space S1 is defined by the separating ring 17 and the carrier 13 by a vertical extension L1 of the minimum diameter of the separating ring 17 and a horizontal extension L2 of the top of the carrier 13. Furthermore, a separation space S2 is defined by the horizontal extension line L3 of the bottom 175 of the separating ring 17 and the side wall of the chamber 11, so that the separating ring 17 and the chamber 11 surround.

The separating ring 17 and the top surface of the locking member 151 are located on the same side of the gas distribution ring 15 (for example, in fig. 1, the separating ring 17 and the top surface of the locking member 151 are located on the lower side of the gas distribution ring 15), so that the locking member 151 is shielded by the separating ring 17, and the probability of the contamination in the reaction space S1 attaching to the locking member 151 is reduced.

Specifically, the separation ring 15 is disposed between the locking member 151 and the reaction space S1 to limit the locking member 151 outside the reaction space S1, and the gas holes 155 of the gas distribution ring 15 are also disposed in the reaction space S1 to supply the process gas to the reaction space S1. That is, the locking piece 151 is located in the partitioned space S2, and the gas hole of the gas distribution ring 17 is restricted outside the partitioned space S2.

In one embodiment, the spacer ring 17 further includes a connecting portion 171, a side surface 173 and a bottom 175, wherein the connecting portion 171 is connected to the gas distribution ring 15, the side surface 173 is connected to the connecting portion 171, the bottom 175 is connected to the side surface 173, the connecting portion 171 and the bottom 175 are opposite to each other, and the side surface 173 is perpendicular to the sidewall of the chamber 11, and can block the contamination in the reaction space S1 from adhering to the locking member 151. Specifically, the connecting portion 171 is perpendicular to the side 173, and the side 173 is perpendicular to the bottom 175. Moreover, when a small amount of contamination is attached to the locking members 151, the side surfaces 173 of the separating ring 17 can also be used to block the contamination dropped from the locking members 151 from falling onto the surface of the substrate W, and the bottom 175 of the separating ring 17 can be used to contain the contamination.

Referring to fig. 3, fig. 3 is a partial schematic view of a plasma cleaning apparatus according to another embodiment of the utility model. As shown in FIG. 3, a first distance d1 is provided between one end of the bottom 175 of the spacer ring 17 and the side wall of the cavity 11, and a second distance d2 is provided between the locking member 151 and the side wall, wherein the first distance d1 is smaller than the second distance d2, so that the spacer ring 17 can separate the locking member 151 more effectively, and the spacer ring 17 can receive the dirt peeled off from the locking member 17 more easily. In other embodiments, the first distance d1 may also be equal to the second distance d 2. In other embodiments, the first distance d1 may be 0, so that the separation space S2 forms a nearly closed space.

In other embodiments, the side 173 of the separating ring 17 may not be perpendicular to the sidewall of the chamber 11. Referring to fig. 4, fig. 4 is a partial schematic view of a plasma cleaning apparatus according to another embodiment of the utility model. As shown in fig. 4, the side 273 of the spacer ring 27 is arcuate. Specifically, the separating ring 27 has a connecting portion 271, a side surface 273 and a bottom 275, wherein the connecting portion 271 connects the gas distribution ring 15, the side surface 273 connects the connecting portion 271, the bottom 275 connects the side surface 273, and the connecting portion 271 and the bottom 275 are opposite to each other. Likewise, the side 273 of the spacer ring 27 may be used to block the contamination in the reaction space S1 from adhering to the locking member 151. When a small amount of contamination is attached to the locking members 151, the side surfaces 273 of the separating ring 27 may also serve to block the contamination falling from the locking members 151 from falling onto the surface of the substrate W, and the bottom 275 of the separating ring 27 may serve to contain the contamination.

In other embodiments, the separating ring 17 may not be connected to the gas distribution ring 15. Referring to fig. 5, fig. 5 is a partial schematic view of a plasma cleaning apparatus according to another embodiment of the utility model. As shown in fig. 5, the separating ring 37 is connected to the sidewall of the chamber 11 through the separating ring locking member 177, and the gas distribution ring 15 is connected to the top of the chamber 11 through the locking member 151. Specifically, the spacer ring 37 has a connecting portion 371, a side surface 373 and a bottom portion 375, wherein the connecting portion 371 is connected to the sidewall of the cavity 11, the side surface 373 and the connecting portion 371 are opposite to each other, and the bottom portion 375 is connected to the side surface 373 and the connecting portion 371. Similarly, the side 373 of the spacer ring 37 can be used to block the dirt in the reaction space S1 from adhering to the locking member 151. When a small amount of contamination adheres to the locking members 151, the side surface 373 of the spacer ring 37 may also be used to block the contamination dropped from the locking members 151 from falling onto the surface of the substrate W, and the bottom 375 of the spacer ring 37 may be used to contain the contamination.

Unlike the previous embodiment, the separating ring 37 is bounded by the vertical extension line L1 of the side surface 373 and the bottom 375, and is bounded by the side wall of the chamber 11, so that the separating ring 37 and the chamber 11 surround the separating space S2.

In one embodiment, the gas distribution ring 15 is directly or indirectly connected to the top of the chamber 11 through the locking member 151. In other embodiments, the gas distribution ring 15 may not be connected to the top of the chamber 11. Referring to fig. 6, fig. 6 is a partial schematic view of a plasma cleaning apparatus according to another embodiment of the utility model. As shown in fig. 6, the gas distribution ring 15 is connected to the sidewall of the chamber 11 through the locking member 151.

Next, referring to fig. 1, fig. 2 and fig. 7, fig. 7 is a partial bottom view of a gas distribution ring according to still another embodiment of the utility model. As shown in fig. 1, 2 and 7, the gas distribution ring 15 is an annular ring, and the surface of the gas distribution ring 15 further includes a plurality of protrusions 153 adjacent to the reaction space S1. The plurality of protrusions 153 make the surface of the adjacent reaction space S1 of the gas distribution ring 15 uneven to enhance the ability of adhering the stains to the chamber 11.

The surface of the gas dispersion ring 15 may also be subjected to roughening treatment and non-conductive treatment, so that a non-flat surface is formed on the surface to enhance the capability of adhering to the dirt of the cavity 11, wherein the roughening treatment may be chemical roughening treatment, mechanical roughening treatment or organic solvent roughening treatment, and the non-conductive treatment may be anodic treatment, so that the surface roughness of the surface of the gas dispersion ring 15 is 8-12 micrometers.

The plasma cleaning apparatus 1 may further include a vacuum pumping system 113 connected to the receiving space S of the chamber 11 and used for pumping out fluid in the receiving space S, wherein the fluid is, for example, but not limited to, air contained in the chamber 11 before the cleaning process.

In view of the above, the technical effects of the plasma cleaning apparatus according to the embodiments of the present invention compared to the prior art are described as follows.

In the prior art, during the pre-cleaning process of the wafer, part of the contamination may adhere to the locking member between the gas distribution ring and the cavity, and may fall back to the surface of the wafer, or even fall into the future wiring area of the wafer, which may make the conductive wire unable to be conducted, thereby reducing the yield of the product. However, since the fastening member is generally a stainless steel screw, it is difficult to effectively surface-treat the screw, and thus it is difficult to solve the problem of the generation of the dirt. In contrast to the plasma cleaning apparatus of the present invention, the separating ring can cover the locking member and further contain the contamination dropped from the locking member, so as to reduce the probability of contamination of the wafer.

The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, i.e., all equivalent variations and modifications in the shape, structure, characteristics and spirit of the present invention described in the claims should be included in the scope of the present invention.

Claims (10)

1. A plasma cleaning apparatus, comprising:

a cavity body with a containing space and a cavity body top;

the radio frequency electrode is connected with the top of the cavity;

a carrying platform which is positioned in the accommodating space and is used for carrying at least one substrate;

the electrode is connected with the carrying platform;

the gas dispersion ring is connected with the cavity through at least one locking piece and is provided with a plurality of air holes for process gas to be introduced into the accommodating space; and

and the separating ring is positioned between the locking piece and the reaction space so as to limit the locking piece outside the reaction space, wherein the air holes of the gas dispersion ring are positioned in the reaction space.

2. A plasma cleaning apparatus, comprising:

a cavity body with a containing space and a cavity body top;

the radio frequency electrode is connected with the top of the cavity;

a carrying platform which is positioned in the accommodating space and is used for carrying at least one substrate;

the electrode is connected with the carrying platform;

a gas dispersion ring connected to the cavity through at least one locking member, the gas dispersion ring having a plurality of gas holes for process gas to pass into the accommodating space; and

a partition ring lower than the gas distribution ring, wherein the partition ring comprises a connecting portion, a side surface and a bottom portion, the connecting portion is perpendicular to the side surface, the side surface is perpendicular to the bottom portion, wherein a horizontal extension line of the bottom portion of the partition ring and the cavity surround a partition space, the locking member is located in the partition space, and the gas hole of the gas distribution ring is limited outside the partition space.

3. A plasma cleaning apparatus as claimed in claim 1 or 2, wherein the connecting portion connects the gas distribution ring, the side surface connects the connecting portion, the bottom portion connects the side surface, and the connecting portion and the bottom portion are opposite to each other, wherein the side surface is configured to block contamination falling from the locking member from falling onto the surface of the substrate, and the bottom portion is configured to receive the contamination.

4. A plasma cleaning apparatus as recited in claim 3, wherein a first distance is provided between an end of said bottom portion and a side wall of said chamber, and a second distance is provided between said locking member and said side wall, wherein said first distance is less than said second distance.

5. A plasma cleaning apparatus as claimed in claim 1, wherein the surface of the gas distribution ring further comprises a plurality of protrusions adjacent to the reaction space for adhering contamination of the chamber.

6. A plasma cleaning apparatus as claimed in claim 1 or 2, wherein the surface of the gas distribution ring is subjected to a roughening treatment and a non-conductive treatment to form a non-flat surface on the surface for attaching a stain to the chamber.

7. A plasma cleaning apparatus as claimed in claim 6, wherein the roughening treatment is a chemical roughening treatment, a mechanical roughening treatment or an organic solvent roughening treatment, and the non-conductive treatment is an anodic treatment.

8. A plasma cleaning apparatus as claimed in claim 6, wherein the surface roughness of the surface of the gas distribution ring is 8 to 12 μm.

9. A plasma cleaning apparatus as claimed in claim 1, further comprising a vacuum pumping system connected to the receiving space of the chamber for pumping the fluid in the receiving space.

10. A plasma cleaning apparatus as claimed in claim 1, further comprising a first shielding plate disposed in the receiving space and adjacent to the top of the chamber, wherein the first shielding plate has a plurality of first openings to form a non-flat bottom surface.

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