CN215481417U - A mould for gallium oxide crystal growth - Google Patents

Abstract

The application discloses a mold for gallium oxide crystal growth. Wherein, a mould for growing gallium oxide crystal comprises: the two mould plates are arranged at intervals and form a gap between the two mould plates, and the cross section of the upper end of each mould plate is of a non-right-angle parallelogram structure. The parallelogram structure designed by the die is completely attached to the crystal growth appearance, and the stress is reduced, so that the stable growth of the (001) plane gallium oxide crystal is ensured, the growth failure of the gallium oxide crystal is effectively avoided, and the quality of the grown (001) plane gallium oxide crystal is improved. In addition, the designed arc-shaped structure protruding outwards realizes a larger radial temperature gradient, so that the shouldering speed of the crystal is effectively controlled, atoms in the crystal are regularly arranged for a sufficient time, and the problem that the (001) plane gallium oxide crystal is easy to generate polycrystal during growth is solved.

Description

A mould for gallium oxide crystal growth

Technical Field

The application relates to the technical field of crystal growth, in particular to a mold for gallium oxide crystal growth.

Background

The existing growing device for growing (001) plane gallium oxide crystal by using the guided mode method is shown in fig. 1A and fig. 1B, and a mold 2 with a slit is put into a crucible 3 filled with gallium oxide raw material. And, the cross section of the upper end of the mould 2 is rectangular, and the outside of the crucible 3 is provided with an induction coil and a heat insulation material. In crystal growth, crucible 3 is first heated by an induction coil, and the gallium oxide raw material inside crucible 3 is heated to become a melt, which rises to the upper surface of mold 2 through a slit by capillary action. Then, the gallium oxide seed crystal whose vertical direction is [010] and front direction is [001] is lowered to the upper surface of the mold 2. The gallium oxide seed crystal is contacted with the melt on the upper surface of the die 2, after the gallium oxide seed crystal is fully welded, the gallium oxide seed crystal is slowly lifted upwards, and then the required gallium oxide crystal 4 is finally grown through processes of necking, seeding, shouldering (slowly reducing the temperature to gradually enlarge the crystal to the specified size), isometric diameter and the like. However, when the growth apparatus is actually used to grow a gallium oxide crystal, the inventors have found that, in the late stage of shouldering, cracks occur at the edge of the crystal, and the crystal cannot be stably grown, so that there is a problem that the growth of the gallium oxide crystal fails or the crystal quality of gallium oxide is poor.

In view of the above-mentioned problems existing in the prior art that growth failure of gallium oxide crystals or poor crystalline quality of gallium oxide is likely to occur when the existing growth apparatus is used for growing gallium oxide crystals, no effective solution has been proposed at present.

SUMMERY OF THE UTILITY MODEL

The present disclosure provides a mold for gallium oxide crystal growth to at least solve the technical problem that gallium oxide crystal growth failure or poor crystallization quality of gallium oxide easily occurs when the existing growth device is used for gallium oxide crystal growth in the prior art.

According to a first aspect of the present application, there is provided a mold for gallium oxide crystal growth, comprising: the two mould plates are arranged at intervals and form a gap between the two mould plates, and the cross section of the upper end of each mould plate is of a non-right-angle parallelogram structure.

Optionally, an angle of an interior angle of a cross-section of the upper end of the die plate is 100 ° -105 °.

Optionally, an interior angle of the cross-section of the upper end of the die plate is at an angle of 103.8 °.

Optionally, the upper end face of the upper end of each die plate is of planar configuration.

Optionally, the upper end surface of the upper end of each die plate is in an outwardly protruding circular arc structure.

Optionally, the height difference between the highest point and the lowest point of the outwards protruding circular arc-shaped structure is 2 mm-3 mm.

Optionally, the height difference between the highest point and the lowest point of the outwardly protruding circular arc shaped structure is 2.5 mm.

Optionally, the opposing faces of the two mould plates are connected by fasteners.

Optionally, each die plate is made of iridium or platinum-rhodium.

According to the growth characteristics of a (001) plane gallium oxide crystal, the cross section of the upper end of the die is designed to be a parallelogram structure with an internal angle of 100-105 degrees (preferably 103.8 degrees), and the upper end face of the die is of an outwards protruding arc-shaped structure. The mold combines the appearance characteristics of shouldering during growth of the (001) plane gallium oxide crystal and the problems of the (001) crystal growth that shouldering is too fast easily, the designed parallelogram structure is completely attached to the appearance of the crystal growth, the generation of stress is reduced, the stable growth of the (001) plane gallium oxide crystal is ensured, the growth failure of the gallium oxide crystal is effectively avoided, and the quality of the grown (001) plane gallium oxide crystal is improved. And the arc-shaped structure protruding outwards realizes a larger radial temperature gradient, so that the shouldering speed of the crystal is effectively controlled, atoms in the crystal are arranged regularly in sufficient time, and the problem that polycrystal is easily generated during the growth of the gallium oxide crystal with the (001) surface is solved.

The above and other objects, advantages and features of the present application will become more apparent to those skilled in the art from the following detailed description of specific embodiments thereof, taken in conjunction with the accompanying drawings.

Drawings

Some specific embodiments of the present application will be described in detail hereinafter by way of illustration and not limitation with reference to the accompanying drawings. The same reference numbers in the drawings identify the same or similar elements or components. Those skilled in the art will appreciate that the drawings are not necessarily drawn to scale. In the drawings:

FIG. 1A is a schematic view of a prior art growing apparatus;

FIG. 1B is a top view of the growing apparatus of FIG. 1A;

FIG. 2A is a schematic diagram of the lattice structure of a gallium oxide crystal;

FIG. 2B is another schematic view of the lattice structure of a gallium oxide crystal;

FIG. 3 is a schematic diagram showing the prior art gallium oxide crystal-overgrowth on the upper surface of the mold at the end of shouldering;

FIG. 4 is a schematic structural view of the mold according to the present embodiment;

FIG. 5 is a top view of the mold shown in FIG. 4;

FIG. 6 is another schematic structural view of the mold according to the present embodiment;

FIG. 7 is another schematic structural view of the mold according to the present embodiment;

FIG. 8 is a schematic structural view of a mold plate according to the present embodiment;

FIG. 9 is another schematic structural view of the mold plate according to the present embodiment;

FIG. 10 is a temperature field profile of the upper end face of the mold shown in FIG. 4;

FIG. 11 is another schematic structural view of the mold according to the present embodiment; and

fig. 12 is a temperature field distribution diagram of the upper end surface of the mold shown in fig. 11.

Detailed Description

It should be noted that, in the present disclosure, the embodiments and features of the embodiments may be combined with each other without conflict. The present disclosure will be described in detail below with reference to the accompanying drawings in conjunction with embodiments.

In order to make the technical solutions of the present disclosure better understood by those skilled in the art, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below with reference to the drawings in the embodiments of the present disclosure, and it is obvious that the described embodiments are only some embodiments of the present disclosure, not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments disclosed herein without making any creative effort, shall fall within the protection scope of the present disclosure.

In order to solve the problem that the growth of gallium oxide crystals fails or the crystalline quality of gallium oxide is poor, the inventors have conducted a great deal of research work on growth apparatuses and growth processes for gallium oxide crystals. After long-term research and practice, the inventor finds that the growth morphology of the gallium oxide crystal can be potentially influenced by the shape of the crystal lattice, namely, the macroscopic appearance of the gallium oxide crystal can be matched with the shape of the microscopic crystal lattice when the gallium oxide crystal is grown. Fig. 2A and 2B show lattice structures of gallium oxide crystals. As shown in fig. 2A and 2B, the lattice constant α and γ angles of gallium oxide crystals are 90 °, and β angle is 103.8 ° (usually abbreviated as 104 °). Therefore, when crystal growth is performed using a gallium oxide seed crystal of [010] crystal orientation, the gallium oxide crystal is gradually enlarged in a parallelogram with a growth interface of 103.8 ° at the shouldering stage.

However, as shown in fig. 1B, since the cross section of the upper end of the mold 2 in the conventional growth apparatus is rectangular, and the growth interface of the crystal is a parallelogram of 103.8 °, the degree of the crystal being spread on the upper surface of the mold 2 may be inconsistent in the late stage of shouldering. Specifically, as shown in fig. 3, when a part of the crystal a has grown to the edge of the upper surface of the mold 2, another part of the crystal B has not yet spread over the mold 2. In order to make the crystal spread over the whole mold 2, the temperature is continuously reduced to continuously amplify part of the crystal B, at this time, the part of the crystal a which grows to the edge of the mold 2 is influenced by the temperature reduction and has a tendency of continuous amplification growth, but is bound by the edge of the mold 2 and cannot be amplified continuously to generate stress, and the accumulated stress at this stage can cause the crystal to have defects of surface slip, twin crystal, even polycrystal and the like, thereby causing the growth failure of the gallium oxide crystal or seriously influencing the quality of the grown crystal.

In view of this, the first aspect of the present embodiment proposes a mold 2 for crystal growth of gallium oxide of (001) plane. Referring to fig. 4 to 6, the first aspect of the present embodiment designs a mold 2 for growth of a (001) gallium oxide crystal, based on the growth characteristics of the (001) plane gallium oxide crystal itself. The mold 2 includes two mold plates 10, the two mold plates 10 are spaced apart and form a gap 20 between the two mold plates 10, and the upper end of each mold plate 10 has a cross-section of a non-right-angled parallelogram structure. The mold 2 provided by the embodiment combines the feature of shouldering during the growth of the (001) plane gallium oxide crystal, and the cross section of the upper end of each mold plate 10 is designed into a non-right-angle parallelogram structure, so that the shape of the upper surface of the mold 2 is attached to the feature of the growth of the (001) plane gallium oxide crystal. In the later stage of shouldering, the crystals all grow to the edge of the die 2 at the same time, and the condition that the degree of the crystals paved on the upper surface of the die 2 is inconsistent can not occur. Therefore, in the process that the (001) plane gallium oxide crystal is paved on the whole die designed by the embodiment, extra stress can not be generated on the crystal due to the limitation of the shape of the die, so that the stable growth of the (001) plane gallium oxide crystal is ensured, the growth failure of the gallium oxide crystal is effectively avoided, and the quality of the grown (001) plane gallium oxide crystal is improved.

Optionally, in this embodiment, an inner angle of the cross section of the upper end of the die plate 10 is 100 ° -105 °. By adopting the technical scheme, one internal angle of the die plate 10 is basically the same as that of the crystal lattice of the gallium oxide crystal, so that the shape of the upper surface of the die 2 conforms to the growth habit of the gallium oxide crystal, and the gallium oxide crystal is prevented from generating extra stress due to the limitation of the shape of the die in the later stage of shouldering.

Preferably, in this embodiment, an internal angle of the parallelogram structure is 103.8 °. By adopting the technical scheme, one internal angle of the die plate 10 is consistent with that of the crystal lattice of the gallium oxide crystal, so that the shape of the upper surface of the die 2 conforms to the growth habit of the gallium oxide crystal, and the gallium oxide crystal is effectively prevented from generating extra stress due to the limitation of the shape of the die in the later stage of shouldering.

Alternatively, as shown in fig. 4 and 6, in the present embodiment, the upper end surface (i.e., the upper surface) of the upper end of each mold plate 10 is a planar structure. By adopting the technical scheme, the temperature distribution of the gallium oxide melt paved on the upper surface of the whole die plate 10 is more uniform, and the thermal stress generated during the growth of gallium oxide crystals is smaller.

Alternatively, referring to fig. 7, in this embodiment, the opposing faces of the two mold plates 10 are connected by fasteners 30. The fixing member 30 may be a gasket or a connecting sheet, and the fixing member 30 is fixedly connected to the two die plates 10 by a rivet.

Optionally, referring to fig. 6, in this embodiment, a value of the gap 20 ranges from 0.1mm to 0.6 mm. Preferably, the gap 20 takes a value of 0.3 mm.

In addition, referring to fig. 8, three round rods 50 are arranged between the two mold plates 10, the three round rods 50 are arranged in parallel, the round rods 50 are fixedly connected with the two mold plates 10, respectively, one end of each round rod 50, which is far away from the channel 40, extends into the two mold plates 10, and forms a distance of 3mm with the top edge of the mold plate 10, on which the channel 40 is not formed, and the distance reduces the influence of the round rods 50 on the growth of gallium oxide crystals on the upper surface of the mold plate 10. The round bar 50 extends into both mold plates 10, increasing the contact area between it and both mold plates 10. Therefore, after the die 2 is used for a long time, the gap 20 between the two die plates 10 cannot be changed due to the supporting effect of the round rod 50, and the service life of the die 2 is prolonged.

Alternatively, in the present embodiment, the two mold plates 10 and the fixing member 30 are integrally formed. Specifically, the center of the mold 2 is cut inward, so that the mold 2 is divided into two mold plates 10, and the position between the two mold plates 2 near the crucible bottom is not completely cut. As shown in fig. 9, three connecting plates 60 are provided between the two die plates 10, the three connecting plates 60 are arranged in parallel in the lateral direction, and the connecting plates 60 provide a gap 20 between the two die plates 10, the gap 20 being 0.3 mm. Therefore, the two die plates 10 and the three connecting blocks 60 are integrated, the phenomenon that the two die plates 10 fall off is reduced, and the normal work of the die 2 is guaranteed.

Optionally, in this embodiment, the two mold plates 10 and the fixing member 30 are formed by separate processing.

Optionally, in this embodiment, each die plate 10 is made of iridium or platinum-rhodium.

In addition, as shown in fig. 6 to 9, two channels 40 are opened at the bottom of each die plate 10. The mold 2 is placed in a crucible 3 filled with gallium oxide feedstock and, after heating, the gallium oxide melt enters the gap 20 through a channel 40.

Further, the inventor researches to find that when the gallium oxide crystal with the (001) plane is grown, the temperature reduction range required for the crystal to be normally shouldered is far higher than that required for the growth of the crystal with the (100) plane. However, due to the influence of control accuracy at an ultrahigh temperature, the temperature is often excessive in the cooling process, and the cooling means is to reduce the power of the heating coil to integrally cool the crucible and the mold, so that the local temperature of the mold cannot be adjusted. Referring to fig. 10, in the early stage of growth, the temperature at the center of the mold is 1840 ℃, the temperature at the two sides of the mold is 1870 ℃, the temperature gradient is too small, the temperature of the gallium oxide crystal growth is 1840 ℃, and the temperature at the center of the mold is reduced to 1810 ℃ in order to enlarge the crystal, reduce the temperature of the mold and influence the fertilization degree when the shoulder is placed on the shoulder, and the temperature at the two sides of the mold is also reduced from 1870 ℃ to 1840 ℃. Then the crystals will quickly enlarge and fill the entire mould because the temperature on both sides of the mould is also low enough. However, the crystal shouldering process is a slow process, and the single crystal can be grown only if shouldering is slow enough to ensure that each atom in the crystal is regularly arranged. And when the crystal growth is carried out to the equal diameter stage, because the heat dissipation capacity in the middle of the crystal is smaller than the heat dissipation capacities at the two sides of the crystal, the temperature in the middle of the crystal is higher than the temperatures at the two sides of the crystal, and because the radial temperature gradient of the existing mold is low, the heat dissipation difference of the crystal cannot be compensated, the situation that the middle of the crystal is disconnected with the mold can be generated during the equal diameter, so that the crystal growth is interrupted, and after the crystal is taken out, the crystal is found to be polycrystalline. Therefore, the design of the mold with a planar top surface proposed in this embodiment 1 cannot satisfy the requirement of (001) plane gallium oxide crystal growth. Note that the mold radial direction is also the mold width direction, the mold width direction is perpendicular to the crystal growth direction, and the mold thickness direction is parallel to the crystal thickness direction.

In view of the above, the inventor further improves the mold 2 on the basis of the foregoing. Specifically, referring to fig. 11, the present embodiment designs the upper end surface of the upper end of each die plate 10 in an outwardly protruding circular arc structure. Since the heating source of the entire mold 2 is such that the crucible 3 generates heat, and the crucible 3 is located below the periphery of the mold 2, the temperature of the mold 2 is such that the farther away from the crucible, the higher the temperature. The design that the upper end face is the convex structure protruding outwards makes the center of mould 2 far away from the crucible, and the temperature is lower, and the mould is close to both sides, and the mould is close to the distance of crucible more, and the temperature is higher. Referring to fig. 12, in the early stage of growth, the temperature at the center of the mold is 1840 ℃, the temperature at the two sides of the mold is 1920 ℃, the temperature gradient is too small, the temperature of the gallium oxide crystal growth is 1840 ℃, the temperature at the center of the mold is reduced to 1810 ℃ in order to enlarge the crystal and reduce the temperature of the mold and influence the fertility when the mold is placed on shoulder, and the temperature at the two sides of the mold is also reduced from 1920 ℃ to 1890 ℃. Then because the temperature of the two sides of the die is still higher than the growth temperature of the gallium oxide crystal, a larger temperature gradient is realized, when the temperature is reduced, the gallium oxide crystal is influenced by the larger temperature gradient between the two sides of the die and the center of the die, the rapid amplification condition similar to the die with the planar structure on the upper end surface can not occur in the shouldering process, the slow shouldering is realized, the atoms in the crystal are arranged regularly with sufficient time, and the problem that the growth of the gallium oxide crystal on the (001) surface is easy to generate polycrystal is solved.

Optionally, in the embodiment, the height difference between the highest point and the lowest point of the outwardly protruding circular arc structure is 2 mm-3 mm. Specifically, the arc-shaped structures protruding outward are determined by the following method: recording two ends of the mold as a point a and a point b, connecting the point a and the point b into a straight line, taking the center of the straight line as a point c, recording the position of the point c, which is 2 mm-3 mm away from the point c, in the vertical upward direction as a point d, connecting the point a, the point b and the point d into an arc by adopting a three-point arc method, and processing the arc as a required shape. Preferably, the height difference between the highest point and the lowest point of the outwardly protruding circular arc shaped structure is 2.5 mm.

In addition, a second aspect of the present embodiment proposes a method for growing a gallium oxide crystal, including the steps of:

step one, placing a mould 2 in the first aspect of the embodiment into a crucible filled with gallium oxide raw materials;

heating to melt the gallium oxide raw material in the crucible;

step three, the melted gallium oxide melt rises to the upper surfaces of the two die plates 10 through the gap 20 under the capillary action;

step four, lowering gallium oxide seed crystals to the upper surfaces of the two die plates 10;

observing the appearance of the gallium oxide seed crystal, and controlling the temperature to melt the lower end of the gallium oxide seed crystal;

step six, under the condition that the height of a meniscus between the melted gallium oxide seed crystal and the upper surfaces of the two die plates 10 is 1mm, pulling the gallium oxide seed crystal;

seventhly, along with the rising of the gallium oxide seed crystal, the gallium oxide melt attached to the gallium oxide seed crystal is crystallized due to the change of temperature, so that a gallium oxide crystal with the diameter of 1mm is generated;

step eight, raising the pulling speed and the temperature at a certain rate to gradually reduce the diameter of the grown gallium oxide crystal to 0.5 mm;

step nine, according to the morphological characteristics of the gallium oxide crystal fed back by the CCD camera, adjusting the pulling speed and the temperature to ensure that the gallium oxide crystal grows in an equal diameter of 10 mm;

step ten, reducing the pulling speed and the temperature at a certain rate, and gradually amplifying the gallium oxide crystals until the gallium oxide crystals are paved on the upper surface of the whole mould 2;

step eleven, according to the morphological characteristics of the gallium oxide crystal fed back by the CCD camera, adjusting the pulling speed and the temperature to enable the gallium oxide crystal to grow in an equal diameter mode until the gallium oxide raw material in the crucible is exhausted, and the gallium oxide crystal is automatically separated from the upper surfaces of the two die plates 10; and

step twelve, stopping pulling and slowly reducing the temperature to reduce the temperature field to the room temperature, and taking out the gallium oxide crystal.

Thus, the method for growing a gallium oxide crystal proposed by the second aspect of the present embodiment has the following advantageous effects:

1. in the later stage of shouldering, the (001) plane gallium oxide crystal cannot generate extra stress due to the limitation of the shape of the mold in the process of paving the whole mold designed by the embodiment, so that the stable growth of the (001) plane gallium oxide crystal is ensured, the growth failure of the gallium oxide crystal is effectively avoided, and the quality of the grown (001) plane gallium oxide crystal is improved.

2. When the temperature is reduced, the gallium oxide crystal is influenced by the larger temperature gradient between the two sides of the die and the center of the die, the situation that the die with the upper end face of a planar structure is similar to a rapid amplification situation can not occur in the shouldering process, slow shouldering is realized, and the atoms in the crystal are regularly arranged in sufficient time, so that the problem that polycrystal is easily generated during the growth of the gallium oxide crystal on the (001) surface is solved.

The present invention will be further described with reference to the following specific examples.

Comparative example 1:

growing a 4-inch gallium oxide single crystal by adopting a guided mode method: the iridium heating body, the crucible and the mould are adopted to be filled in the furnace in strict concentric mode, the furnace body is vacuumized and then is filled with the iridium heating body50% by volume of CO₂And Ar gas and gas are used as protective gases. Wherein the cross section of the upper end of the die is rectangular, the width of the die is 110mm, and the target growth width is 110mm of (001) plane gallium oxide single crystal. After the temperature is raised to completely melt the gallium oxide raw material in the crucible, selecting a proper temperature point to contact gallium oxide seed crystals with the upper surface of the mold, lifting and lowering the temperature to shouldering, wherein cracks appear on the edges of the crystals in the later stage of shouldering, and the crystals cannot grow stably.

Example 1:

the charging was performed by using a structure substantially identical to that of comparative example 1, except that a mold having a parallelogram structure with an internal angle of 100 to 105 (preferably 103.8) at the cross section of the upper end was used. The whole process of the shouldering process is smooth, after the crystal is fully paved in the die, the center of the top end of the die still keeps a stable crystallization state, and the gallium oxide single crystal with the complete width of 110mm grows in a subsequent equal width mode. The grown gallium oxide single crystal having a width of 110mm was processed to obtain a 4-inch (001) gallium oxide single crystal.

Comparative example 2:

growing a 4-inch gallium oxide single crystal by adopting a guided mode method: the iridium heating body, the crucible and the mould are adopted to be filled in the furnace in strict concentric mode, the furnace body is vacuumized and then filled with CO accounting for 50 percent of volume₂And Ar gas and gas are used as protective gases. Wherein the upper end surface of the die is of a plane structure, the width of the die is 110mm, and the target growth width is 110mm of (001) plane gallium oxide single crystal. After the temperature is raised to completely melt the gallium oxide raw material, selecting a proper temperature point to contact the seed crystal with the upper surface of the die, lifting and lowering the temperature to shoulder, wherein the shouldering process is obviously accelerated in the shouldering process, the inner part of the crystal is sunken firstly and then separated from the die in advance in the later stage of equal diameter, and after the crystal is taken out, the crystal is found to be polycrystalline.

Example 2:

the charging is carried out by adopting a structure which is basically consistent with that of the comparative example 2, except that a mould with an arc-shaped structure with an outward protruding upper end surface is adopted, and the height difference between the highest point and the lowest point of the mould is 2 mm-3 mm (preferably 2.5 mm). The whole process of the shouldering process is slow at a constant speed, after the crystals are fully paved on the upper surface of the die, the center of the top end of the die still keeps a stable crystallization state, and the gallium oxide single crystal with the complete width of 110mm grows in a subsequent equal-width mode. The grown gallium oxide single crystal having a width of 110mm was processed to obtain a 4-inch (001) -plane gallium oxide single crystal.

In summary, according to the growth characteristics of the (001) plane gallium oxide crystal itself, the embodiment of the present disclosure designs a parallelogram structure with an upper end having a cross section of 100 ° -105 ° (preferably 103.8 °), and the upper end surface of the mold is a mold having an outwardly protruding arc structure. The parallelogram structure designed by the die is completely attached to the crystal growth appearance, and the stress is reduced, so that the stable growth of the (001) plane gallium oxide crystal is ensured, the growth failure of the gallium oxide crystal is effectively avoided, and the quality of the grown (001) plane gallium oxide crystal is improved. And the arc-shaped structure protruding outwards realizes a larger radial temperature gradient, so that the shouldering speed of the crystal is effectively controlled, atoms in the crystal are arranged regularly in sufficient time, and the problem that polycrystal is easily generated during the growth of the gallium oxide crystal with the (001) surface is solved.

It is to be noted that, unless otherwise specified, technical or scientific terms used herein shall have the ordinary meaning as understood by those skilled in the art to which this application belongs.

In the description of the present application, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the present application and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the present application.

Furthermore, the terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. In the description of the present application, "a plurality" means two or more unless specifically defined otherwise.

In this application, unless expressly stated or limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can include, for example, fixed connections, removable connections, or integral parts; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.

In this application, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through intervening media. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.

The above description is only for the preferred embodiment of the present application, but the scope of the present application is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present application should be covered within the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims (9)

1. A mold for gallium oxide crystal growth, comprising: the mould comprises two mould plates (10), the two mould plates (10) are arranged at intervals, a gap (20) is formed between the two mould plates (10), and the cross section of the upper end of each mould plate (10) is of a non-right-angle parallelogram structure.

2. The die of claim 1, wherein the upper end of the die plate (10) has an interior angle of 100 ° to 105 ° in cross-section.

3. Mould according to claim 2, characterized in that the upper end of the mould plate (10) has an internal angle of 103.8 ° in cross-section.

4. Mould according to claim 1, characterized in that the upper end surface of the upper end of each mould plate (10) is of planar configuration.

5. The mold according to claim 1, wherein the upper end surface of the upper end of each of the mold plates (10) is formed in a circular arc shape protruding outward.

6. The mold according to claim 5, wherein the height difference between the highest point and the lowest point of the outwardly protruding circular arc-shaped structures is 2mm to 3 mm.

7. The mold according to claim 6, wherein the height difference between the highest point and the lowest point of the outwardly protruding circular arc shaped structures is 2.5 mm.

8. Mould according to claim 1, characterized in that the opposite faces of the two mould plates (10) are connected by means of a fixing element (3).

9. Mould according to claim 1, characterized in that the material of which each mould plate (10) is made is iridium or platinum-rhodium.

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