CN215451423U - High-double-face-rate main grid structure, solar cell and solar cell module - Google Patents
High-double-face-rate main grid structure, solar cell and solar cell module Download PDFInfo
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- CN215451423U CN215451423U CN202121740237.5U CN202121740237U CN215451423U CN 215451423 U CN215451423 U CN 215451423U CN 202121740237 U CN202121740237 U CN 202121740237U CN 215451423 U CN215451423 U CN 215451423U
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Abstract
The utility model belongs to the technical field of solar cells, and particularly relates to a high-double-face-rate main grid structure, a solar cell and a solar cell module. Reduce the shading area, the sunlight can be more the back that pierces through to improve back efficiency, and main bars structure adopts fretwork formula design, when the assembly welding, owing to do not have the bridging effect of back of the body main bars, can reduce the rosin joint risk of back electrode, guarantee welding quality.
Description
Technical Field
The utility model belongs to the technical field of solar cells, and particularly relates to a high-double-face-rate main grid structure, a solar cell and a solar cell module.
Background
With the increasing exhaustion of chemical fuel resources, the development and utilization of new energy also become the perpetual direction of scientific research in the 21 st century, and the characteristics of simple, safe and pollution-free solar energy and inexhaustible solar energy also become the research hotspots in the last century. The solar cell commonly used at present is a double-sided solar cell, and the back side of the solar cell can also effectively utilize the received light to generate electricity besides the front side of the solar cell to generate electricity, so that the double-sided electricity generation characteristic of the solar cell enables the solar cell to generate more electric energy than a single-sided solar cell. However, the double-sided solar cell cannot effectively utilize the emitted light from the back due to its low transmittance, resulting in low light conversion efficiency.
Therefore, how to improve the light-emitting conversion efficiency of the bifacial solar cell is one of the issues of intensive research by those skilled in the art.
SUMMERY OF THE UTILITY MODEL
The utility model provides a main grid structure with high double-sided rate, and aims to solve the technical problem that the existing double-sided solar cell is low in luminous conversion efficiency.
The utility model is realized in such a way, and provides a high-double-sided rate main grid structure which comprises two main grids which are arranged independently and a plurality of back electrodes, wherein each back electrode is arranged between the two main grids, two ends of each back electrode are respectively connected with the two main grids, and hollow parts are arranged between the two main grids and above and below the back electrodes.
Furthermore, the main grid is designed to be gradually widened in the direction towards the back electrode.
Further, the width of the main gate on both sides of the back electrode is in the range of 200 μm to 2000 μm.
Further, the width of the main gate at both sides away from the back electrode is in the range of 100 μm to 1000 μm.
Furthermore, the two main grids are symmetrically distributed along the central axis of the main grid structure.
Further, the back electrodes are arranged in parallel with each other.
Further, the main grid is an aluminum main grid.
Further, the back electrode is a silver electrode.
The utility model also provides a solar cell, which comprises a silicon wafer, the main grid structure and the fine grid, wherein the main grid structure and the fine grid are mutually overlapped and are arranged on the silicon wafer.
The utility model also provides a solar cell module which comprises the solar cell.
The utility model has the beneficial effects that the main grid structure comprises two main grids which are arranged independently and a plurality of back electrodes, each back electrode is arranged between the two main grids, two ends of each back electrode are respectively connected with the two main grids, hollow parts are arranged between the two main grids and above and below the back electrodes, the shading area is reduced, sunlight can penetrate to the back surface more, and therefore, the back surface efficiency is improved.
Drawings
Fig. 1 is a schematic diagram of a main gate structure provided in an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the utility model and are not intended to limit the utility model.
The utility model provides a high-double-sided aluminum main grid structure which comprises two main grids 1 and a plurality of back electrodes 2, wherein the main grids 1 and the back electrodes 2 are mutually independently arranged, each back electrode 2 is arranged between the two main grids 1, two ends of each back electrode 2 are respectively connected with the two main grids 1, hollow parts 3 are arranged between the two main grids 1 and above and below the back electrodes 2, the shading area is reduced, sunlight can penetrate to the back more, and therefore the back efficiency is improved.
Example one
Referring to fig. 1, the first embodiment provides a high-double-sided ratio main grid structure, which includes two main grids 1 and a plurality of back electrodes 2, each back electrode 2 is disposed between two main grids 1 and each two ends of the back electrode 2 are respectively connected to two main grids 1, and a hollow portion 3 is disposed above and below the back electrode 2 and between the two main grids 1. This main grid structure reduces shading area, and the sunlight can be more the penetrating back to improve back efficiency, and main grid structure adopts fretwork formula design, when the subassembly welds, owing to do not have the bridging effect of back main grid 1, can reduce back electrode 2's rosin joint risk, guarantee welding quality, owing to be equipped with fretwork portion 3 in addition, can save thick liquids at the printing in-process, be favorable to reduce cost.
In this embodiment, the main grid structure can be used for any double-sided solar cell, and can be used as a back main grid structure of the double-sided solar cell, so that the back light absorption rate of the double-sided solar cell can be improved, and high double-sided rate is brought to the double-sided solar cell.
In other embodiments, the main grid structure can be used as a front main grid structure of the double-sided solar cell, or can be used as a front main grid structure and a back main grid structure of the double-sided solar cell, and can also bring high double-sided rate to the double-sided solar cell.
Further, the main gate 1 is designed to be gradually widened in a direction toward the back electrode 2. That is, two main grids 1 are disposed on both sides of each back electrode 2, and the width of each main grid 1 is gradually increased toward each back electrode 2. The main grid 1 is designed in a gradually widening mode, so that current conduction can be reduced, and current collection is facilitated. Further, in the photoelectric conversion process, current is transmitted to the back electrode 2 through the main grid 1 and then is transmitted outwards through the welding strip connected with the back electrode 2, and the main grid 1 is designed in a gradually widening mode, so that the improvement of the transmission efficiency of the current is facilitated.
Wherein, the width of the main grid 1 at the two sides of the back electrode 2 is in the range of 200 μm to 2000 μm. The width of the main gate 1 at both sides away from the back electrode 2 is in the range of 100 to 1000 μm. In the printing process, the back electrode 2 is printed firstly, then the main grid 1 is printed, after the printing of the back electrode 2 is completed, the width of the main grid 1 needs to be controlled when the main grid 1 is printed, so that the width of the main grid 1 far away from the two sides of the back electrode 2 is smaller than the width of the main grid 1 positioned on the two sides of the back electrode 2, and the main grid 1 is ensured to be designed in a gradually widening mode in the direction towards the back electrode 2.
In this embodiment, two main grids 1 are symmetrically distributed along the central axis of the main grid structure.
In the present embodiment, the back electrodes 2 are disposed in parallel with each other.
In this embodiment, the main grid 1 is an aluminum main grid, and the back electrode 2 is a silver electrode. It should be noted that, in other embodiments, the main grid 1 may also be a copper main grid, a silver main grid or other types, and the back electrode 2 may also be a copper electrode, an aluminum electrode or other types, which are not described herein again.
Example two
A second embodiment provides a solar cell, which includes a silicon wafer, a main gate structure and a fine gate as in the first embodiment, where the main gate structure and the fine gate are overlapped with each other and both disposed on the silicon wafer.
In this embodiment, the fine grid structure has a plurality of fine grids, each fine grid structure is parallel to each other, and the main grid 1 of the main grid structure is perpendicular to the fine grid structure.
The solar cell with the main grid structure reduces the shading area, sunlight can penetrate the back more, so that the back efficiency is improved, the main grid structure adopts a hollow-out design, when the assembly is welded, due to the fact that the bridging effect of the main grid 1 on the back does not exist, the rosin joint risk of the back electrode 2 can be reduced, the welding quality is guaranteed, in addition, due to the fact that the hollow-out portion 3 is arranged, slurry can be saved in the printing process, and cost reduction is facilitated.
EXAMPLE III
A third embodiment provides a solar cell module, including the solar cell as described in the second embodiment. Adopt solar cell's solar module as embodiment two, reduce the shading area, the sunlight can be more to pierce through to the back to improve back efficiency, and main bars structure adopts fretwork formula design, when the subassembly welding, owing to do not have the bridging effect of back main bars 1, can reduce back electrode 2's rosin joint risk, guarantee welding quality, owing to be equipped with fretwork portion 3 in addition, can save thick liquids at the printing in-process, be favorable to reduce cost.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the utility model, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. The utility model provides a main bars structure of high two-sided rate, its characterized in that includes two main bars and a plurality of back electrode that mutually independent set up, each back electrode is located between two main bars and each two main bars are connected respectively to the both ends of back electrode, just are located between two main bars the top and the below of back electrode all are equipped with fretwork portion.
2. The main gate structure of claim 1, wherein the main gate is designed to be gradually widened in a direction toward the back electrode.
3. The main gate structure of claim 2, wherein the main gate width on both sides of the back electrode is in the range of 200 μm to 2000 μm.
4. The main gate structure of claim 2, wherein the main gate width on both sides away from the back electrode is in the range of 100 μm to 1000 μm.
5. The main grid structure of claim 1, wherein two main grids are symmetrically distributed along a central axis of the main grid structure.
6. The main gate structure of claim 1, wherein each of said back electrodes are disposed parallel to each other.
7. The main gate structure of claim 1, wherein the main gate is an aluminum main gate.
8. The main gate structure of claim 1, wherein the back electrode is a silver electrode.
9. A solar cell comprising a silicon wafer, a main grid structure according to any one of claims 1 to 8 and a fine grid, wherein the main grid structure and the fine grid are overlapped and arranged on the silicon wafer.
10. A solar cell module comprising the solar cell of claim 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121740237.5U CN215451423U (en) | 2021-07-28 | 2021-07-28 | High-double-face-rate main grid structure, solar cell and solar cell module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121740237.5U CN215451423U (en) | 2021-07-28 | 2021-07-28 | High-double-face-rate main grid structure, solar cell and solar cell module |
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| Publication Number | Publication Date |
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| CN215451423U true CN215451423U (en) | 2022-01-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202121740237.5U Active CN215451423U (en) | 2021-07-28 | 2021-07-28 | High-double-face-rate main grid structure, solar cell and solar cell module |
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| CN (1) | CN215451423U (en) |
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2021
- 2021-07-28 CN CN202121740237.5U patent/CN215451423U/en active Active
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